CN1570199A - Self glow plasma based ion infusion or infusion and deposition device - Google Patents
Self glow plasma based ion infusion or infusion and deposition device Download PDFInfo
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- CN1570199A CN1570199A CN 200410018294 CN200410018294A CN1570199A CN 1570199 A CN1570199 A CN 1570199A CN 200410018294 CN200410018294 CN 200410018294 CN 200410018294 A CN200410018294 A CN 200410018294A CN 1570199 A CN1570199 A CN 1570199A
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Abstract
A self-glowing plasma base ion implantation or implantation and deposition equipment for material surface modification is provided. The equipment comprises: an implantation element vaporization system, an implantation element introducing system, an ionization and implantation or implantation and deposition system, and a vacuum system, wherein the implantation element vaporization system communicates with the implantation element introducing system, the implantation element introducing system also communicates with the ionization and implantation or implantation and deposition system, and the ionization and implantation or implantation and deposition system is placed in the vacuum system. In the invention, the whole implantation process is stable, the pollution for the vacuum system is reduced. And the implantation efficiency or the implantation and deposition efficiency is improved by using hollow anode and large-area cathode technology.
Description
Technical field
The present invention relates to a kind of injection or injection and sedimentary device that is used for the material technology field, specifically is ion implantation or injection and deposition apparatus of a kind of self glow plasma base.
Background technology
It is ion implantation or inject and the method for deposition (comprehensive ion implantation) that U.S. professor Conrad has proposed the gas ions base, and this method is placed on workpiece in the plasma, the surface modification that can carry out the workpiece of large size, irregular complex shape.
Find by literature search, people such as Conrad apply for United States Patent (USP), the patent No.: 4764394, patent name: plasma source ion injection method and device (Method and apparatus for plasma source ionimplantation), this patented technology is: object is placed in the vacuum vessel, adopt different ion sources to produce plasma body then: as the hot filament electron excitation, radio-frequency drive, microwave-excitation, electromagnetic oscillation, vacuum arc, after the plasma source of various ways such as magnetron sputtering forms plasma body, on workpiece, apply high negative bias simultaneously and carry out ion implantation.But also have some defectives at present in the use of this technology: at first, vacuum wall adopts complicated plasma containment cusped magnetic field structure, vacuum chamber cost height.The second, because the generation of its plasma body needs complicated utility appliance usually:, increased ion implantation cost and controlled complicacy as hot filament electron excitation, radio-frequency drive, microwave-excitation, electromagnetic oscillation, vacuum arc, magnetron sputtering etc.; The 3rd, can not be applicable to the plasma bodyization of all elements, particularly for IA and most low melting points of IIA family, high chemically active element etc. in the semi-conductors such as the solid material of low conductivity such as sulphur, phosphorus and boron, silicon, germanium and the periodic table of elements, and in these materials, some element particularly is expected to be applied to the every field of biology, optics, electronics.
Summary of the invention
The objective of the invention is at existing above-mentioned deficiency and defective in the background technology, provide a kind of self glow plasma base ion implantation or injection and deposition apparatus, make it overcome comprehensive ion implantation or injection and sedimentary method and apparatus can not be to solid material and the electro-conductive material of some low melting points or high-vapor-pressure such as the shortcoming that elements such as sodium, calcium carry out effective plasma bodyization and inject of low conductivities such as sulphur, phosphorus.Utilization produces plasma body from aura, no longer needs extra plasma excitation means, saves cost.Not only can be applicable to low melting point, high-vapor-pressure element, and the plasma-based that can be used for gas or steam state material element is ion implantation or inject and deposition, and the whole process of method is all more stable and can maximum amplitude reduce pollution to vacuum system.
The present invention is achieved by the following technical solutions, the present invention includes: inject the elements vaporization system, inject the element import system, ionization and injection or injection and depositing system, vacuum system.Its annexation is: inject the elements vaporization system and be connected to injection element import system, provide the injection particle for injecting the element import system, inject the element import system and be connected to ionization and injection or injection and depositing system, play the effect of particle transmission pipeline, ionization and injection or injection and depositing system are connected to vacuum system again, rely on vacuum system that ion implantation required vacuum environment is provided.
Described injection elements vaporization system, for low melting point high-vapor-pressure solid matter element, comprise: heating cavity, source heating unit, heating cavity external shield, carrier gas entrance hole, steam leadout hole, heating cavity is used for placing heated solid matter, the source heating unit is connected the heating cavity outside, and heating heat is provided.Heating unit outside, source has the heating cavity external shield to protect.The importing of the steam after the evaporation of the solid matter in heating cavity for convenience can adopt specific gas such as rare gas element as vector gas, and at this moment, heating cavity can be connected to a carrier gas entrance hole, and vector gas is imported by the carrier gas entrance hole.The carrier gas entrance hole also can be connected to through in the particle feed conduit after the Flow-rate adjustment.The steam of evaporation, and injection or injection and sedimentary gaseous substance can be connected by a steam leadout hole that is connected on the heating cavity and inject on the element import system.In steam leadout hole outside, can add heating unit, to prevent the condensation blocking pipe of steam.This heating unit can be a heating unit independently, also can adopt and heating cavity common source heating unit.
Described injection elements vaporization system can be one and be connected to a pipeline that injects the element import system for gaseous state or steam state injected material.
Described injection element import system comprises a flow regulation device and a particle feed conduit of introducing the injection particle, flow regulation device is connected to that flow regulation device can be motorized adjustment device such as mass flowmeter on the steam leadout hole that injects the elements vaporization system, also can be manual flow regulation device as the flow control valve regulated by the Flow-rate adjustment handle etc.Flow regulation device such as flow control valve outside can add the independent valve heating unit according to the condensation situation outside of steam, prevent the cohesion blocking pipe of steam, for being not easy the agglomerative particle, also can.The valve heating unit can be independently, also can be the heating unit that uses one with the steam leadout hole that injects the elements vaporization system or its heating cavity.The exit end of flow regulation device such as flow control valve is connected to one particle is imported on the particle feed conduit of injecting cavity, by this particle feed conduit, will inject or inject and deposit and transmit to ionization and injection or injection and depositing system with particle.The particle feed conduit can employing itself be the material of thermal insulation material, also can adopt the metallics feed conduit.For easy agglomerative injection or injection and deposited particles, particle feed conduit adiabatic apparatus can be adopted in the outside of pipeline, and itself also can make the pipeline that has heating function outside or pipeline, also can be directly at the outside heating unit that adopts of pipeline.When ionization and injection or injection and depositing system are positioned at vacuum system when inner, the adiabatic apparatus of particle feed conduit or particle feed conduit can be connected with vacuum chamber by ring flange or quick-release flange.Rely on this system, can will provide the injection that comes or the elementary particle of injection and deposition usefulness under the adiabatic state, to import to ionization and injection or injection and deposition chamber injecting the elements vaporization system.System can avoid injecting the element blocking pipe, perhaps is deposited on the tube wall of importing and loses.
Described ionization and injection or injection and depositing system comprise a hollow anode, ionization and injection or injection and deposition chamber, workpiece target platform, workpiece, workpiece target platform support.Its annexation is: this hollow anode is connected on the particle feed conduit of injecting the element import system, perhaps near.This system can will rely on the focusing electric field ionization that forms between hollow anode and the large area cathode by the particle that injects the element import system and provide, and obtains to quicken in ionization, injects or injects and deposit to workpiece surface.Hollow anode is connected to the positive high voltage end of external high pressure power supply.The particle feed conduit outlet that also can directly adopt conduction is as hollow anode.The outside of hollow anode is ionization and injection or injection and deposition chamber, and the particle of importing by ionization, quickens in this cavity, injects or injects and deposition.Ionization and injection or injection and deposition chamber are placed a workpiece target platform than big conduction of the surface-area of hollow anode or local conduction as negative electrode.Under this structure, can near hollow anode, form an electronics rich region, strengthen ionization level to the particle that sends.Workpiece is placed on the workpiece target platform, and workpiece target platform is connected to the negative high-voltage end of external high pressure electricity by target platform support.Ionization and injection or injection and depositing system are connected on the vacuum system, in vacuum system or in the inside of ionization and injection or injection and deposition chamber, can adopt other auxiliary ionization device to carry out ionization.
Described vacuum system is to provide a vacuum environment for whole injection process.This vacuum system can be a big vacuum chamber that is connected the vacuum pump venting port, and ionization and injection or injection and depositing system are positioned at wherein, and ionization and injection or injection and depositing system also can be directly connected on the vacuum pumping hardware.
When the present invention worked: solid matter was through heating, enter and inject the element import system, by Flow-rate adjustment and control, the ionization and injection or injection and the deposition chamber that import, rely on the focusing electric field that constitutes between node type anode and the large area cathode, the discharge of generation glow plasma is injected at high pressure under the effect of power supply, and ion is accelerated and is injected into workpiece surface.Vacuum tightness in the whole surface modification process is kept by vacuum system.
The present invention compared with prior art, have the following advantages: utilize to inject the elements vaporization system, overcoming comprehensive ion implantation or injection and sedimentary method and apparatus can not be to solid material and the electro-conductive material of some low melting points or high-vapor-pressure such as the shortcoming that elements such as sodium, calcium carry out effective plasma bodyization and inject of low conductivities such as sulphur, phosphorus.Device also can be used for plasma-based ion implantation or the injection and the deposition of gas or steam state material element.Be in ionization and injection or injection and deposition chamber structure in the big vacuum chamber, the whole process of make injecting is all more stable and can maximum amplitude reduce pollution to vacuum system; Utilization produces plasma body from aura, no longer needs extra plasma excitation means, saves cost, utilize hollow anode, the large area cathode technology forms focusing electric field, the focusing of electronics anode, improve the ionization level of glow discharge, improved injection or injection and sedimentary efficient.
Description of drawings
Fig. 1 one-piece construction synoptic diagram of the present invention
Fig. 2 integral part structural representation of the present invention
Embodiment
As shown in Figure 1, the present invention includes: inject elements vaporization system 1, inject element import system 2, ionization and injection or injection and depositing system 3, vacuum system 4.Its mode of connection is: inject elements vaporization system 1 and be connected to injection element import system 2, inject element import system 2 and be connected to ionization and injection or injection and depositing system 3, ionization and injection or injection and depositing system 3 are positioned at vacuum system 4 inside again.
For low melting point high-vapor-pressure solid matter element, injecting elements vaporization system 1 comprises: heating cavity 5, source heating unit 6, heating cavity external shield 7, carrier gas entrance hole 8, steam leadout hole 9, its annexation is: source heating unit 6 is connected heating cavity 5 outsides, and there is heating cavity external shield 7 heating unit 6 outsides in source.Heating cavity 5 is connected to a carrier gas entrance hole 8, and carrier gas is imported by the carrier gas entrance hole.Heating cavity 5 is connected by steam leadout hole 9 and injects element import system 2, in steam leadout hole 9 outsides, perhaps adds heating unit, and this heating unit is a heating unit independently, perhaps with heating cavity common source heating unit 6.
Inject elements vaporization system 1 for the injected material that itself is exactly gaseous state or steam state, be one and be connected to the pipeline that injects element import system 2.
Described injection element import system 2 comprises a flow regulation device 10, particle feed conduit 12, flow regulation device 10 is connected on the steam leadout hole 9 that injects elements vaporization system 1, flow regulation device 10 is motorized adjustment device or manual flow regulation device, flow regulation device 10 is outside or add valve heating unit 11, valve heating unit 11 is independently, or use the heating unit 6 of one with the steam leadout hole 9 that injects elements vaporization system 1 or its heating cavity 5, the exit end of flow regulation device 10 is connected on the particle feed conduit 12, is connected by this particle feed conduit 12 and ionization and injection or injection and depositing system 3.
Particle feed conduit 12 materials adopt thermal insulation material, perhaps adopt the metallics feed conduit, for easy agglomerative injection or injection and deposited particles, particle feed conduit adiabatic apparatus 13 is adopted in the outside of pipeline, perhaps the outside of pipeline or pipeline itself are the pipelines that has heating function, perhaps directly at the outside heating unit that adopts of pipeline, when ionization and injection or injection and depositing system 3 are positioned at vacuum system 4 when inner, particle feed conduit 12 or particle feed conduit adiabatic apparatus 13 are connected with vacuum system 4 by ring flange or quick-release flange 14.
Described ionization and injection or injection and depositing system 3 comprise a hollow anode 15, ionization and injection or injection and deposition chamber 16, workpiece target platform 17, target platform support 18, workpiece 19, its annexation is: hollow anode 15 is connected to the positive high voltage end (not providing among the figure) of external high pressure power supply, the outside of hollow anode 15, be ionization and injection or injection and deposition chamber 16, ionization and injection or injection and deposition chamber 16, workpiece target platform 17 than big conduction of the surface-area of hollow anode 15 or local conduction is set as negative electrode, workpiece target platform 17 is planeforms, or spherical shape.Workpiece 19 is placed on the workpiece target platform 17, and workpiece target platform 17 is connected to the negative high-voltage end (not providing among the figure) of external high pressure electricity by target platform support 18.
Hollow anode 15 directly serves as with the outlet of particle feed conduit 12, perhaps uses independent hollow anode.
Described vacuum system 4 is to provide a vacuum environment for whole injection process.This vacuum system 4 is big vacuum chambers 20 that are connected vacuum pump venting port 21, and ionization and injection or injection and depositing system 3 are positioned at wherein; Perhaps ionization and injection or injection and depositing system 3 are directly connected to (figure does not provide) on the vacuum pumping hardware.
Claims (7)
1, a kind of self glow plasma base ion implantation or injection and deposition apparatus, comprise: inject elements vaporization system (1), inject element import system (2), ionization and injection or injection and depositing system (3), vacuum system (4), it is characterized in that, inject elements vaporization system (1) and be connected to injection element import system (2), inject element import system (2) and be connected to ionization and injection or injection and depositing system (3), ionization and injection or injection and depositing system (3) are positioned at vacuum system (4) inside, ionization and injection or injection and depositing system (3) or be directly connected on the vacuum pumping hardware.
2, self glow plasma base according to claim 1 ion implantation or injection and deposition apparatus, it is characterized in that, for low melting point high-vapor-pressure solid matter element, injecting elements vaporization system (1) comprising: heating cavity (5), source heating unit (6), heating cavity external shield (7), carrier gas entrance hole (8), steam leadout hole (9), its annexation is: source heating unit (6) is connected heating cavity (5) outside, there is heating cavity external shield (7) source heating unit (6) outside, heating cavity (5) is connected to a carrier gas entrance hole (8), heating cavity (5) is connected by steam leadout hole (9) and injects element import system (2), in steam leadout hole (9) outside, heating unit perhaps is set, this heating unit is a heating unit independently, perhaps with heating cavity (5) common source heating unit (6); Inject elements vaporization system (1) for the injected material that itself is exactly gaseous state or steam state, be one and be connected to the pipeline that injects element import system (2).
3, self glow plasma base according to claim 1 ion implantation or injection and deposition apparatus, it is characterized in that, described injection element import system (2) comprises a flow regulation device (10), flow regulation device (10) is connected on the steam leadout hole (9) that injects elements vaporization system (1), flow regulation device (10) is motorized adjustment device or manual flow regulation device, flow regulation device (10) is outside or add valve heating unit (11), valve heating unit (11) is independently, or use the heating unit (6) of one with the steam leadout hole (9) that injects elements vaporization system (1) or its heating cavity (5), the exit end of flow regulation device (10) is connected on the particle feed conduit (12), is connected by this particle feed conduit (12) and ionization and injection or injection and depositing system (3).
4, self glow plasma base according to claim 3 ion implantation or injection and deposition apparatus, it is characterized in that, particle feed conduit (12) material adopts thermal insulation material, perhaps adopt the metallics feed conduit, for easy agglomerative injection or injection and deposited particles, particle feed conduit adiabatic apparatus (13) is adopted in the outside of pipeline, perhaps the outside of pipeline or pipeline itself are the pipelines that has heating function, perhaps directly at the outside heating unit that adopts of pipeline, when ionization and injection or injection and depositing system (3) are positioned at vacuum system (4) when inner, particle feed conduit (12) or particle feed conduit adiabatic apparatus (13) are connected with vacuum system (4) by ring flange or quick-release flange (14).
5, self glow plasma base according to claim 1 ion implantation or injection and deposition apparatus, it is characterized in that, described ionization and injection or injection and depositing system (3) comprise a hollow anode (15), ionization and injection or injection and deposition chamber (16), workpiece target platform (17), target platform support (18), workpiece (19), its annexation is: hollow anode (15) is connected to the positive high voltage end of external high pressure power supply, the outside of hollow anode (15), be ionization and injection or injection and deposition chamber (16), ionization and injection or injection and deposition chamber (16), workpiece target platform (17) than big conduction of the surface-area of hollow anode (15) or local conduction is set as negative electrode, workpiece target platform (17) is planeform or spherical shape, workpiece (19) is placed on the workpiece target platform (17), and workpiece target platform (17) is connected to the negative high-voltage end of external high pressure electricity by target platform support (18).
6, ion implantation or injection and deposition apparatus of self glow plasma base according to claim 5 is characterized in that, hollow anode (15) directly uses the outlet of particle feed conduit (12) to serve as, and perhaps uses independent hollow anode.
7, ion implantation or injection and deposition apparatus of self glow plasma base according to claim 1, it is characterized in that, described vacuum system (4) is a big vacuum chamber (20) that is connected vacuum pump venting port (21), and ionization and injection or injection and depositing system (3) are positioned at wherein; Perhaps ionization and injection or injection and depositing system (3) are directly connected on the vacuum pumping hardware.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182947A CN1296515C (en) | 2004-05-13 | 2004-05-13 | Self glow plasma based ion infusion or infusion and deposition device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182947A CN1296515C (en) | 2004-05-13 | 2004-05-13 | Self glow plasma based ion infusion or infusion and deposition device |
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| CN1570199A true CN1570199A (en) | 2005-01-26 |
| CN1296515C CN1296515C (en) | 2007-01-24 |
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| CNB2004100182947A Expired - Fee Related CN1296515C (en) | 2004-05-13 | 2004-05-13 | Self glow plasma based ion infusion or infusion and deposition device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107955936A (en) * | 2017-12-28 | 2018-04-24 | 深圳市华星光电半导体显示技术有限公司 | Evaporation source and evaporated device |
| CN108411273A (en) * | 2018-02-02 | 2018-08-17 | 信利（惠州）智能显示有限公司 | A kind of auxiliary heating system and method for ion implantation device |
| CN108642466A (en) * | 2018-05-25 | 2018-10-12 | 北京航空航天大学 | A kind of device of complex technique prepares coating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85106828B (en) * | 1985-09-10 | 1987-09-09 | 张戈飞 | Process for forming sulphide layer on the surface metal parts and apparatus therefor |
| US6224948B1 (en) * | 1997-09-29 | 2001-05-01 | Battelle Memorial Institute | Plasma enhanced chemical deposition with low vapor pressure compounds |
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2004
- 2004-05-13 CN CNB2004100182947A patent/CN1296515C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107955936A (en) * | 2017-12-28 | 2018-04-24 | 深圳市华星光电半导体显示技术有限公司 | Evaporation source and evaporated device |
| CN108411273A (en) * | 2018-02-02 | 2018-08-17 | 信利（惠州）智能显示有限公司 | A kind of auxiliary heating system and method for ion implantation device |
| CN108642466A (en) * | 2018-05-25 | 2018-10-12 | 北京航空航天大学 | A kind of device of complex technique prepares coating |
| CN108642466B (en) * | 2018-05-25 | 2020-12-22 | 北京航空航天大学 | Device for preparing coating by composite technology |
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| Publication number | Publication date |
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| CN1296515C (en) | 2007-01-24 |
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Granted publication date: 20070124 |