CN1567546A - Physical vapor deposition apparatus - Google Patents
Physical vapor deposition apparatus Download PDFInfo
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- CN1567546A CN1567546A CN 03142451 CN03142451A CN1567546A CN 1567546 A CN1567546 A CN 1567546A CN 03142451 CN03142451 CN 03142451 CN 03142451 A CN03142451 A CN 03142451A CN 1567546 A CN1567546 A CN 1567546A
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Abstract
The invention is a physical gas phase deposition device for making electric conduction material able to deposit on a substrate. It mainly includes a setting cover and an adhesion cover, where the setting cover is used to hold a target material combined of many electric conduction plates and has at least a hole on the bottom edge. And its inside is externally connected with a gas guide tube and a part of ionized gas can be guided in the setting cover through the gas guide tube. The adhesion cover is used to hold the substrate and makes the substrate and target material opposite to each other in a mode of covering the setting cover, and there is a gas remained between the two covers after the adhesion cover covers the setting cover. The particles of the target material, generating by gas bombardment and falling on the bottom edge of the setting cover, can fall into the gap through the hole.
Description
Technical field
The present invention relates to a kind of film deposition apparatus, and particularly install relevant for a kind of physical vapour deposition (PVD) (physical vapor deposition).
Background technology
Physical vapour deposition (PVD) (physical vapor deposition abbreviates PVD usually as) utilizes the mode of physical phenomenon, a kind of technology of carrying out thin film deposition exactly.In the development of semiconductor technology, main PVD technology is sputter (sputtering) method.Sputter is the ion that utilizes plasma to produce, and, is made in the gas phase of plasma to have by the particle of sputter object (as atom) by the bombardment of sputter object (bombardment) by ion pair, produces depositing of thin film.
And for example be Thin Film Transistor-LCD (thin film transistor liquid crystaldisplay; usually abbreviate TFT-LCD as) substrate on; usually can indium oxide layer tin (IndiumTim Oxide be arranged sputter; abbreviate ITO as) rete, use with the transparent electrode layer as TFT-LCD.And along with the foundation of production line of new generation, the production of large-sized TFT-LCD panel is popularized gradually, correspondingly, as forming the ITO target of transparent electrode layer on the TFT-LCD substrate, also must increase its size.But,,, could use as target so multi-disc must be had usually after ITO sheet than small size is combined into the bigger ITO sheet of area because ITO can't be made into the bigger integrated target of area.
Please be simultaneously with reference to Figure 1A and Figure 1B.Figure 1A is existing physical vapor deposition device and storing ITO target and the schematic diagram of substrate in this device, Figure 1B is in the physical vapor deposition device of the mid-ITO of being placed with target of Figure 1A and substrate, attached cover (mask) cover is connect the cutaway view that is provided with behind the cover (ground shield).Existing physical vapor deposition device 100, being used for making for example is that the electric conducting material of ITO can be deposited on the substrate.100 of physical vapor deposition devices mainly include cover 110 and attached cover 150 are set.Wherein, for the purpose of clearly demonstrating, come explicit declaration by the mode that cover 110 and attached cover 150 unlatchings will be set among Figure 1A.
Ionized gas through gas conduit 140 imports is used for bombarding ITO target 130, makes ITO target 130 can be sputtered the ITO atom.This ITO atom can be attached to the surface with ITO target substrate 160 respect to one another through diffusion, and then forms the ITO rete on substrate 160.
Owing to have the joint close 170 of downward extension between each ITO sheet 120 of composition ITO target 130, so when Ionized gas bombards joint close 170 places of ITO target 130, the ITO atom that joint close 170 places are sputtered by gas just tends to accumulate in and forms the ITO particulate together, ITO atom thereby can't arrive the surface of substrate 160 according to diffusion principle.And the ITO particulate that should build up then tends to again along the joint close 170 that should extend downwards, falls within the accumulation region 114 of the lower edge 112 that cover 110 is set.
Through as can be known above-mentioned, owing to there is joint close 170, the ITO atom that the ITO target 130 that bombarded is produced can be built up into the ITO particulate and accumulates on the lower edge 112 that cover 110 is set.
This result will cause the gas after partial ionization, is imported by gas conduit 140 cover 110 o'clock are set, and can make that the ITO particulate of building up on the lower edge 112 that cover 110 is set is kicked up.The pollution that this will be enough to make substrate 160 be subjected to the ITO particulate and impaired, even substrate 160 seriously must be scrapped because of impaired.
In addition, the ITO particulate is built up on the lower edge 112 that cover 110 is set, and also can make whole physical vapor deposition device regularly to be cleaned, and this will make the service time of physical vapor deposition device to elongate.Not only to increase please cleaning device manpower, also to pay the expense of cleaning, and because of the stopping production of device, also can be therefore and the productivity of certain degree ground reduction device.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of physical vapor deposition device, be used for effectively improving the productivity of physical vapor deposition device, and effectively reduce the manpower of cleaning device and reduce the cost of cleaning device, and the substrate that device is produced has preferable quality.
According to above-mentioned purpose, the invention provides a kind of physical vapor deposition device, be used for making electric conducting material to be deposited on the substrate.This physical vapor deposition device mainly includes cover and attached cover is set.Cover is set is used for putting the target that is combined by a plurality of conducting strips, and this is provided with the cover lower edge and has at least one hole, the inside of physical vapor deposition device also is circumscribed with gas conduit, and the gas of partial ionization can be imported into by this gas conduit and be provided with in the cover.Attached cover then is used for putting substrate, and this attached cover utilization cover connects the mode that cover is set, and makes substrate and target toward each other, and when the attached cover cover connect cover is set after, be provided with between cover and the attached cover and leave a gap.Wherein, by gas bombard target produced and fall within the target particulate that the cover lower edge is set, can fall into the gap by this hole.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is existing physical vapor deposition device and storing ITO target and the schematic diagram of substrate in this device;
Figure 1B has in the physical vapor deposition device of ITO target and substrate in the storing shown in Figure 1A, when the attached cover cover connects cutaway view after cover is set;
Fig. 2 A is physical vapor deposition device of the present invention and storing ITO target and the schematic diagram of substrate in this device;
Fig. 2 B has in the physical vapor deposition device of ITO target and substrate in the storing shown in Fig. 2 A, when the attached cover cover connects cutaway view after cover is set.
Description of reference numerals
100 physical vapor deposition devices 110 are provided with cover
112 lower edges, 114 accumulation region
120 ITO sheets, 130 ITO targets
140 gas conduits, 150 attached covers
160 substrates, 170 joint closes
190 gaps, 200 physical vapor deposition devices
210 are provided with cover 212 lower edges
220 ITO sheets, 230 ITO targets
240 gas conduits, 250 attached covers
260 substrates, 270 joint closes
280 holes, 290 gaps
Embodiment
Please be simultaneously with reference to Fig. 2 A and Fig. 2 B.Fig. 2 A is physical vapor deposition device of the present invention and storing ITO target and the schematic diagram of substrate in this device, and Fig. 2 B has in the physical vapor deposition device of ITO target and substrate in the storing shown in Fig. 2 A, when the attached cover cover connects cutaway view after cover is set.Physical vapor deposition device 200, being used for making for example is that the electric conducting material of ITO can be deposited on the substrate.200 of physical vapor deposition devices mainly include cover 210 and attached cover 250 are set.Wherein, for the purpose of clearly demonstrating, utilize the mode that cover 210 and attached cover 250 unlatchings will be set to come explicit declaration among Fig. 2 A.
The lower edge 212 that cover 210 is set has the hole 280 that runs through lower edge 212.And hole 280 is corresponding with joint close 270 respectively.The inside of physical vapor deposition device 200 is circumscribed with gas conduit 240, and gas conduit 240 is used for making the gas of partial ionization, can be imported into by gas conduit 240 to be provided with in the cover 210.
Attached cover 250 is used for putting substrate 260, and attached cover 250 utilizes cover to connect the mode that cover 210 is set, make substrate 260 can with ITO target 230 toward each other.And when attached cover 250 cover connect cover 210 is set after, be provided with between cover 210 and the attached cover 250 and leave gap 290 (please refer to Fig. 2 B).
Therefore, the ITO atom at ITO target 230 joint close that results from 270 places of above-mentioned ionizable gas bombardment, just can not fall within lower edge 212 again after, build up on lower edge 212.And can be because hole 280 and joint close 270 corresponding, the ITO particulate (target particulate) that results from joint close 270 places is fallen because of the effect of gravity, and the hole 270 by running through lower edge 212, fall into gap 290.
In addition, because the gap 290 that is provided with between cover 210 and the attached cover 250 has only the height of 2～3mm approximately, so the ITO particulate just can fully be limited in the gap 290.
Substrate in the foregoing description can be a thin film transistor base plate, also can be that (color filter, CF) to need sputter for example be any substrate of conductive layers such as ITO to substrate etc. to colored filter.The gas of partial ionization then can be argon gas inert gases such as (Argon), or employed any process gas in the nitrogen physical gas-phase depositions such as (Nitrogen).
The unqualified shape that runs through the hole 280 of the lower edge 212 that cover 210 is set, any can running through is provided with cover 210 lower edge 212, and ITO particulate (target particulate) can all can by the hole that lower edge 212 fell into and be limited to the Any shape that the gap 290 between cover 210 and the attached cover 250 is set.
By the foregoing description as can be known, be restricted to ITO particulate in the gap 290 can be not again owing to feed to the gas effect of the partial ionization that cover 210 is set through gas conduit 240 and to be kicked up, and the ITO particulate can not built up in being provided with on the cover 210 again.
Therefore, physical vapor deposition device of the present invention only need clean originally just to be ranked and clean the attached cover of time-histories, and need not extra regularly the cleaning cover is set.This not only can also reduce the manpower of asking cleaning device, and can save the cost of cleaning device so that the service time of device can effectively be shortened, but and the productivity of certain degree ground raising device.
In addition, because ITO particulate (target particulate) is subjected to controlling effectively, the quality of substrate also can obtain effective guarantee.
In sum; though the present invention discloses as above in conjunction with a preferred embodiment; so it is not to be used for limiting the present invention; those skilled in the art; without departing from the spirit and scope of the present invention; can be used for a variety of modifications and variations, so protection scope of the present invention is with being as the criterion that claim was defined.
Claims (12)
1. a physical vapor deposition device is used for making an electric conducting material can be deposited on the substrate, and this physical vapor deposition device comprises:
One is provided with cover, be used for putting a target that combines by a plurality of conducting strips, this is provided with the cover lower edge and has at least one hole, and this physical vapor deposition device inside is circumscribed with a gas conduit, and a part of Ionized gas can be imported into this by this gas conduit and be provided with in the cover; And
One attached cover is used for putting this substrate, and this attached cover utilization cover connects the mode that this is provided with cover, makes this substrate and this target toward each other, and after this attached cover cover connects this cover is set, this be provided with cover and this attached cover between leave a gap;
Wherein, this target that is bombarded by this gas produces and falls within this target particulate that cover lower edge is set and falls into this gap by this hole.
2. physical vapor deposition device as claimed in claim 1, wherein form the joint close that has at least one downward extension between those conducting strips of this target, this this hole that is provided with on the cover is corresponding with this joint close, and this target particulate that results from this joint close place can fall into this gap by this hole.
3. physical vapor deposition device as claimed in claim 1, wherein this substrate is a thin film transistor base plate.
4. physical vapor deposition device as claimed in claim 1, wherein this substrate is a colored filter substrate.
5. physical vapor deposition device as claimed in claim 1, wherein this gas is argon gas.
6. physical vapor deposition device as claimed in claim 1, wherein this gas is nitrogen.
7. a physical vapor deposition device is used for making a tin indium oxide can be deposited on the substrate, and this physical vapor deposition device comprises:
One is provided with cover, be used for putting a tin indium oxide target that combines by a plurality of tin indium oxide sheets, this is provided with the cover lower edge and has at least one hole, and this physical vapor deposition device inside is circumscribed with a gas conduit, and a part of Ionized gas can be imported into this by this gas conduit and be provided with in the cover; And
One attached cover is used for putting this substrate, and this attached cover utilization cover connects the mode that this is provided with cover, makes this substrate and this tin indium oxide target toward each other, and after this attached cover cover connects this cover is set, this be provided with cover and this attached cover between leave a gap;
Wherein, this tin indium oxide target that is bombarded by this gas produces and falls within the tin indium oxide particulate that this is provided with the cover lower edge, can fall into this gap by this hole.
8. physical vapor deposition device as claimed in claim 7, wherein form the joint close that has at least one downward extension between those tin indium oxide sheets of this tin indium oxide target, this this hole that is provided with on the cover is corresponding with this joint close, and this tin indium oxide particulate that results from this joint close place can fall into this gap by this hole.
9. physical vapor deposition device as claimed in claim 7, wherein this substrate is a thin film transistor base plate.
10. physical vapor deposition device as claimed in claim 7, wherein this substrate is a colored filter substrate.
11. physical vapor deposition device as claimed in claim 7, wherein this gas is argon gas.
12. physical vapor deposition device as claimed in claim 7, wherein this gas is nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03142451 CN1280877C (en) | 2003-06-12 | 2003-06-12 | Physical vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03142451 CN1280877C (en) | 2003-06-12 | 2003-06-12 | Physical vapor deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1567546A true CN1567546A (en) | 2005-01-19 |
| CN1280877C CN1280877C (en) | 2006-10-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03142451 Expired - Fee Related CN1280877C (en) | 2003-06-12 | 2003-06-12 | Physical vapor deposition apparatus |
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| Country | Link |
|---|---|
| CN (1) | CN1280877C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107164724A (en) * | 2017-05-11 | 2017-09-15 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particulate determines method |
| CN110144566A (en) * | 2019-06-20 | 2019-08-20 | 高炬 | A kind of physical vapour deposition (PVD) sample heating device |
-
2003
- 2003-06-12 CN CN 03142451 patent/CN1280877C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107164724A (en) * | 2017-05-11 | 2017-09-15 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particulate determines method |
| CN107164724B (en) * | 2017-05-11 | 2019-04-23 | 合肥京东方显示技术有限公司 | The quantity of coating machine and target particle determines method |
| CN110144566A (en) * | 2019-06-20 | 2019-08-20 | 高炬 | A kind of physical vapour deposition (PVD) sample heating device |
| CN110144566B (en) * | 2019-06-20 | 2021-09-14 | 枣庄学院 | Physical vapor deposition sample heating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1280877C (en) | 2006-10-18 |
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