CN1567537A - A method for cleaning surface of semiconductor crystal cell - Google Patents
A method for cleaning surface of semiconductor crystal cell Download PDFInfo
- Publication number
- CN1567537A CN1567537A CNA031269699A CN03126969A CN1567537A CN 1567537 A CN1567537 A CN 1567537A CN A031269699 A CNA031269699 A CN A031269699A CN 03126969 A CN03126969 A CN 03126969A CN 1567537 A CN1567537 A CN 1567537A
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- CN
- China
- Prior art keywords
- transistor elements
- semiconductor transistor
- photocatalyst solution
- processing method
- semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Catalysts (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a method of cleaning the surface of a semiconductor silicon crystal cell, including the steps: providing a semiconductor crystal cell and using a chemimechanical grinding process to process the surface; forming a photocatalyst solution layer on the surface; and using the UV light to irradiate the photocatalyst solution. It can effectively clean the remained grinding solution, chemical matters and other impurities.
Description
[technical field]
The present invention relates to a kind of semiconductor transistor elements method for cleaning surface.
[background technology]
In the semi-conductor industry, cmp (CMP, Chemical Mechanical Polishing) is one of polishing semiconductor silicon crystal unit best approach.Cmp to be IBM Corporation research and develop when development CMOS product in 1985 successful technology, its objective is with crystalline substance first the in addition planarization of ups and downs dielectric layer (Dielectric Layer) or metal level (Metal Layer).Cmp can remove the material on brilliant unit surface, makes brilliant first surface become more smooth, and has two kinds of effects of chemical formula grinding of the mechanical polishing and the acid-base solution of abrasive materials, can make brilliant first surface reach comprehensive planarization.
United States Patent (USP) the 6th, 364 discloses a kind of chemical machinery polishing system for No. 744 and uses the correlation technique of lapping liquid polishing semiconductor silicon crystal unit.This method comprises the steps:
(1) between semiconductor silicon wafer unit and polishing device, provides rightabout motion;
(2) irradiating ultraviolet light between semiconductor silicon wafer unit and polishing device;
(3) send lapping liquid to go into the gap of semiconductor silicon wafer unit and polishing device again, lapping liquid comprises abrasive grains and at least a photocatalyst particle.
Said method uses photocatalyst in process of lapping be for realizing improving the speed that removes of semiconductor silicon wafer unit metal level.But, after the semiconductor transistor elements cmp, the semiconductor transistor elements surface still can more residual lapping liquids and dirt such as chemical substance need cleaning.
So, provide the method for the brilliant first surperficial dirt of a kind of clean semiconductor real for necessary.
[summary of the invention]
The object of the present invention is to provide the method for the brilliant surperficial dirt of a kind of clean semiconductor circle.
For realizing the object of the invention, the invention provides a kind of Nanosurface processing method of using the photocatalyst technology, its step comprises: provide semiconductor brilliant unit, handle the semiconductor transistor elements surface with chemical and mechanical grinding method; Form one deck photocatalyst solution on described semiconductor transistor elements surface; With the described photocatalyst solution of UV-irradiation.
Compare with prior art, after the photocatalyst solution irradiating ultraviolet light of the present invention, titanium dioxide (TiO wherein
2) or zinc oxide (ZnO
x) particulate has superpower oxidation and restoring function, so the residual impurity such as lapping liquid of semiconductor transistor elements after effectively cleaning chemistry mechanical lapping is handled, and make semiconductor transistor elements surface possess hydrophilic property.
[description of drawings]
Fig. 1 is a semiconductor transistor elements method for cleaning surface schematic flow sheet.
[embodiment]
After the semiconductor transistor elements cmp (CMP), the range of surface roughness of semiconductor transistor elements reaches 10～50nm.But dirts such as some lapping liquids and chemical substance are still left on the brilliant first surface of conductor.
See also Fig. 1, this semiconductor transistor elements method for cleaning surface is a kind of Nanosurface processing method of using the photocatalyst technology, and its step is as follows:
Step 1: provide semiconductor brilliant unit,, handle this crystalline substance unit with chemical and mechanical grinding method as silicon crystal unit.
Step 2: form one deck photocatalyst solution on described semiconductor transistor elements surface.Can on semiconductor silicon wafer unit surface, spray and form one deck photocatalyst solution; Also semiconductor transistor elements can be put into the ultrasonic oscillation device that fills photocatalyst solution and evenly form one deck photocatalyst solution.This photocatalyst solution contains titanium dioxide (TiO
2) or zinc oxide (ZnO
x) particulate, titanium dioxide (TiO
2) or zinc oxide (ZnO
x) the particle size scope is 15～50nm.
Step 3: with the described photocatalyst solution of UV-irradiation.This ultraviolet wavelength is that luminous intensity is greater than 1mw/cm below the 380nm
2During irradiating ultraviolet light, titanium dioxide (TiO
2) or zinc oxide (ZnO
x) particulate can decompose the dirt on semiconductor silicon wafer unit surface, and make the surperficial possess hydrophilic property of semiconductor silicon wafer unit.Now with titanium dioxide (TiO
2) particulate is that example is explained its operation principle:
When the UV-irradiation of wavelength below 380nm at titanium dioxide (TiO
2) during particulate, excited by the energy of ultraviolet light at the electronics of valence band (Valence Band) to rise to conduction band (ConductionBand), just can produce the positive hole of positively charged at valence band this moment, and it is right to form one group of electronics electricity hole.Titanium dioxide (TiO
2) then utilize the oxidizing force in the electric hole produced and the reducing power and the surperficial H that contacts of electronics
2O and O
2Have an effect, produce the extremely strong free radical O of oxidizing force
-, O
2 -, O
3 -And OH
-, and have superpower oxidation and restoring function.
The OH that produces on the silicon crystal unit surface
-And H
+Can destroy and disperse the formation of water droplet, make the surface be not easy to form water droplet.The photocatalyst of being crossed by ultraviolet lighting can make the silicon crystal unit surface become Superhydrophilic (SuperHydrophilic).After the UV-irradiation, the contact angle that water droplet forms on the silicon crystal unit surface is far smaller than the contact angle before not using photocatalyst solution and UV-irradiation, approaches zero.
Claims (7)
1. the processing method on a semiconductor transistor elements surface, its step comprises: provide semiconductor brilliant unit, handle the semiconductor transistor elements surface with chemical and mechanical grinding method; Form one deck photocatalyst solution on described semiconductor transistor elements surface; With the described photocatalyst solution of UV-irradiation.
2. the processing method on semiconductor transistor elements as claimed in claim 1 surface is characterized in that photocatalyst solution contains titanium dioxide (TiO
2) or zinc oxide (ZnO
x) particulate.
3. the processing method on semiconductor transistor elements as claimed in claim 2 surface is characterized in that titanium dioxide (TiO
2) or zinc oxide (ZnO
x) the particle size scope is 15～50nm.
4. the processing method on semiconductor transistor elements as claimed in claim 1 surface is characterized in that ultraviolet wavelength is below the 380nm.
5. the processing method on semiconductor transistor elements as claimed in claim 1 surface is characterized in that ultraviolet ray intensity is greater than 1mw/cm
2
6. the processing method on semiconductor transistor elements as claimed in claim 1 surface is characterized in that photocatalyst solution sprays in semiconductor transistor elements surface formation one deck photocatalyst solution.
7. the processing method on semiconductor transistor elements as claimed in claim 1 surface is characterized in that forming one deck photocatalyst solution in the semiconductor transistor elements surface in filling the sound wave vibrator of photocatalyst solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031269699A CN1291458C (en) | 2003-06-17 | 2003-06-17 | A method for cleaning surface of semiconductor crystal cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031269699A CN1291458C (en) | 2003-06-17 | 2003-06-17 | A method for cleaning surface of semiconductor crystal cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1567537A true CN1567537A (en) | 2005-01-19 |
| CN1291458C CN1291458C (en) | 2006-12-20 |
Family
ID=34469133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031269699A Expired - Fee Related CN1291458C (en) | 2003-06-17 | 2003-06-17 | A method for cleaning surface of semiconductor crystal cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1291458C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113529095A (en) * | 2021-08-05 | 2021-10-22 | 漳州市兴达辉机械有限公司 | Surface treatment process for handle connecting cross rod |
-
2003
- 2003-06-17 CN CNB031269699A patent/CN1291458C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113529095A (en) * | 2021-08-05 | 2021-10-22 | 漳州市兴达辉机械有限公司 | Surface treatment process for handle connecting cross rod |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1291458C (en) | 2006-12-20 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061220 Termination date: 20150617 |
|
| EXPY | Termination of patent right or utility model |