CN1284211C - Abrasion pad collating unit and process for collating the abrasion pad using same - Google Patents
Abrasion pad collating unit and process for collating the abrasion pad using same Download PDFInfo
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- CN1284211C CN1284211C CN 02155703 CN02155703A CN1284211C CN 1284211 C CN1284211 C CN 1284211C CN 02155703 CN02155703 CN 02155703 CN 02155703 A CN02155703 A CN 02155703A CN 1284211 C CN1284211 C CN 1284211C
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- grinding
- grinding pad
- pad
- electrode
- abrasive disk
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Abstract
The present invention relates to a finishing device of grinding pads for finishing grinding pads in grinding equipment of chemical machine for grinding semiconductor wafers and a method for using the finishing device of grinding pads for finishing grinding pads. The finishing device of grinding pads of the present invention comprises a grinding pad, a finishing utensil of grinding pads and a bias voltage generator, wherein a contrary electrode is arranged in the grinding pad, the finishing utensil of grinding pads is provided with a grinding pan and a grinding support frame, an electrode is arranged in the finishing utensil of grinding pads, the bias voltage generator is used for exerting a bias voltage between the contrary electrode and the electrode to generate an electric field between the grinding pan and the grinding pad for adsorbing or attracting particles with charges.
Description
Technical field
The present invention relates to a kind of chemical-mechanical grinding device of grinding semiconductor chip, and be particularly to be used in a kind of chemical-mechanical grinding device of grinding semiconductor chip put in order the method for the grinding pad collating unit and the arrangement grinding pad thereof of grinding pad.
Background technology
Chemical mechanical milling method can provide the solution of the semiconductor wafer comprehensive planarization in surface, complicated along with the lifting of very lagre scale integrated circuit (VLSIC) (ULSI) integrated level, manufacturing, often need form material and metal level such as materials such as tungsten or copper such as insulating barrier such as silicon dioxide at semiconductor wafer surface, and then form the structure of a multiple inside conductor, to promote the electrical performance of integrated circuit package.Yet, only just can make above-mentioned insulating barrier and metal interlevel reach the effect of comprehensive planarization at present by chemical mechanical milling method about the technology of planarization.
And chemical mechanical milling method is to utilize a modular chemical mechanical grinder equipment, generally speaking comprises four and forms module; Be respectively semiconductor wafer carrying (wafer handl ing), grinding and polishing (polishing), grind to starch and transmit (slurry delivery) and control system (control system).Semiconductor wafer carrying module is an automated mechanical instrument, and skilled operation is carried to the semiconductor wafer cartridge (wafer cassette) of grinding and polishing module.The grinding and polishing module comprises several grinding heads (polishing head), is arranged at respectively on the mechanical positioning device that is called carrousel (carousel).One grinding head is picked up semiconductor wafer and is passed to the polished grinding of a polishing grinding pad (polishing pad).When the polished grinding of semiconductor wafer was finished, slurry was transmitted module and is dispersed the neat slurry solution that flows.Slurry solution is abrasive, and the semiconductor wafer surface that mechanically weares and teares is in order to remove unwanted material.
The semiconductor wafer number that disposes along with board increases, and when the grinding pad in the grinding and polishing module becomes level and smooth because repeat to polish grinding semiconductor chip, can make the grinding pad roughening once more by the grinding pad collating unit.In addition, because abrasive pattern and grinding and polishing head pressure can cause rugged and roughly wear and tear, the grinding pad collating unit also has the function of keeping the grinding pad level.By using the grinding pad collating unit to grind the area of outstanding grinding pad height, make grinding pad maintenance level.
Fig. 1 summarily shows the grinding pad collating unit of a prior art, be applicable in the chemical-mechanical grinding device 110 of a grinding semiconductor chip material, comprising the grinder pad finisher 160 that is used to put in order the grinding pad 14 that is positioned on the grinding plate 150, comprise in addition in order to beam slurry solution slurry transfer pipeline 180 on grinding pad 14.Comprised in the grinder pad finisher 160 that mill bracing frame 170 and abrasive disk 171 are with arrangement grinding pad 14 and removal grinding pad material, as the abrasive grains of semiconductor die sheet material that grinds away and the slurry solution that remains in grinding pad 14, wherein abrasive disk 171 is for containing the stainless steel disc of diamond particle.
In prior art, be used to put in order the grinder pad finisher 160 of grinding pad, only adopt abrasive disk 171 with arrangement grinding pad 14 and remove the grinding pad material, as the semiconductor die sheet material that grinds away and remain in the abrasive grains of the slurry solution on the grinding pad 14.Grinder pad finisher 160 can't effectively be removed on grinding pad 14 charged fine particle for example for oxide, metal and remain in the abrasive grains of the slurry in the grinding pad 14.
Summary of the invention
Main purpose of the present invention is to provide a kind of grinding pad collating unit and the method for utilizing its arrangement grinding pad, comprise a grinder pad finisher in the above-mentioned grinding pad collating unit, it has an abrasive disk and and grinds bracing frame and have an electrode that to be attached to abrasive disk outer or be electrode with the abrasive disk, and one opposite electrode be arranged in the grinding pad, and be biased between above-mentioned two electrodes to apply one by a bias generator, between grinding pad and abrasive disk, to produce an electric field.Abrasive disk is attracted and adsorb electrically charged particle by this electric field, and electrically charged particle comes from the semiconductor die sheet material that grinds away and remain in abrasive grains in the slurry solution on the grinding pad.
And utilize the method for grinder pad finisher arrangement grinding pad of the present invention to comprise: rotate the grinding pad that is provided with an opposite electrode in; Rotation has the grinder pad finisher that an abrasive disk and grinds bracing frame, is provided with an electrode in grinder pad finisher; With the top lap contact grinding pad of grinder pad finisher, with the arrangement grinding pad; And apply one and be biased between above-mentioned opposite electrode and electrode to produce an electric field and make abrasive disk absorption or attract electrically charged particle.
Description of drawings
Be applicable to the grinding pad collating unit in the chemical-mechanical grinding device in Fig. 1 prior art;
Be applicable to the grinding pad collating unit in the chemical-mechanical grinding device in Fig. 2 embodiment of the invention.
Wherein, description of reference numerals is as follows:
The 14--grinding pad;
110,210--chemical-mechanical grinding device;
150,250--grinding plate;
160,260--grinder pad finisher;
170,270--mill bracing frame;
171,271--abrasive disk;
180,280--slurry transfer pipeline;
The 272--electrode;
The 273--opposite electrode;
The 274--bias generator.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and cooperate appended graphicly, be described in detail below:
As shown in Figure 2, the grinding pad collating unit in the chemical-mechanical grinding device that is applicable to grinding semiconductor chip in the embodiment of the invention.One chemical-mechanical grinding device 210 at first is provided, has grinding pad 14 in this chemical-mechanical grinding device 210, it is arranged on the grinding plate 250, and the use that can cooperate semiconductor wafer carrier (not shown) is to be used for the cmp semiconductor wafer.In addition, in grinding pad 14, be provided with an opposite electrode 273, and on grinding pad 14, also be provided with slurry transfer pipeline 280 in order to inject slurry solution (for example as the SiO of abrasive grains
2Or Al
3O
4Reach the slurry solution that abrasive chemical thing and water are formed, the pH value is between pH 2--12) on grinding pad 14, then be provided with mill bracing frame 270 in the grinder pad finisher 260 and in order to arrangement (scrub) grinding pad 14 and remove the abrasive disk 271 of grinding pad material, this abrasive disk 271 is for example for containing the stainless steel disc of diamond particle.Also be provided with an electrode 272 in grinder pad finisher 260, it is outer or be electrode 272 with abrasive disk 271 that electrode 272 can be additional to abrasive disk 271.Be provided with in addition in addition a bias generator 274 with apply a bias voltage (between 0.5--5.0volts) in 272 at opposite electrode 273 and electrode to produce an electric field in grinding pad 14 and 271 of abrasive disks.Attracting and to adsorb electrically charged particle, this electrically charged particle is for example for the semiconductor die sheet material that grinds away and remain in abrasive grains in the slurry solution on the grinding pad 14 by this electric field for abrasive disk 271.
Moreover, the method for utilizing grinder pad finisher 260 of the present invention to put grinding pads 14 in order, its step is as follows:
In addition, if select SiO
2Or Al
3O
4For abrasive grains is suspended in the pH 2--6 slurry solution, according to colloid chemistry theory, SiO
2Or Al
3O
4Abrasive grains is with positively charged.If use above-mentioned slurry solution to remove abrasive metal rete, SiO
2/ Al
3O
4Abrasive grains and metal film abrasive material both are positively charged.Therefore, when bias generator 274 applies on the electrode 272 that a negative bias is pressed on 272 at opposite electrode 273 and electrode, positively charged particle then is attracted and is adsorbed onto on the abrasive disk 271.
Otherwise, if select SiO
2Or Al
3O
4For abrasive grains is suspended in the pH 9--12 slurry solution, according to colloid chemistry theory, SiO
2Or Al
3O
4Abrasive grains is with electronegative.If use above-mentioned slurry solution to remove to grind oxidation film layer, SiO
2/ Al
3O
4Abrasive grains and oxide-film abrasive material both are electronegative.Therefore, when bias generator 274 applies on the electrode 272 that a positively biased is pressed on 272 at opposite electrode 273 and electrode, positively charged particle then is attracted and is adsorbed onto on the abrasive disk 271.
Though the present invention with preferred embodiment openly as above; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can do various equivalences and change and retouching, so protection scope of the present invention is as the criterion with claim.
Claims (5)
1. a method of utilizing grinding pad collating unit arrangement grinding pad is applicable in the chemical-mechanical grinding device of grinding semiconductor chip, it is characterized in that, comprising:
Rotate the grinding pad that is provided with an opposite electrode in;
Rotation has the grinder pad finisher that an abrasive disk and grinds bracing frame, wherein is provided with an electrode in this grinder pad finisher;
This abrasive disk of going up with this grinder pad finisher contacts this grinding pad, to put this grinding pad in order; And
Applying one is biased between this opposite electrode and this electrode to produce an electric field and makes this abrasive disk absorption or attract electrically charged particle.
2. the method for utilizing grinding pad collating unit arrangement grinding pad as claimed in claim 1 is characterized in that, comprises that also beam one comprises SiO
2Or Al
3O
2The step of slurry solution on this grinding pad, wherein this slurry solution between this opposite electrode and this electrode, applies a positive bias to this electrode when pH9--12.
3. the method for utilizing grinding pad collating unit arrangement grinding pad as claimed in claim 1 is characterized in that, comprises that also beam one comprises SiO
2Or Al
3O
2The step of slurry solution on this grinding pad, wherein this slurry solution between this opposite electrode and this electrode, applies a back bias voltage to this electrode when pH2--6.
4. the method for utilizing grinding pad collating unit arrangement grinding pad as claimed in claim 1 is characterized in that this abrasive disk is fixed on this grinder pad finisher, and this abrasive disk is one to contain the stainless steel disc of diamond particle.
5. the method for utilizing grinding pad collating unit arrangement grinding pad as claimed in claim 1 is characterized in that, in this opposite electrode and this bias voltage of between this electrode, being applied between 0.5--5.0volts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02155703 CN1284211C (en) | 2002-12-03 | 2002-12-03 | Abrasion pad collating unit and process for collating the abrasion pad using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02155703 CN1284211C (en) | 2002-12-03 | 2002-12-03 | Abrasion pad collating unit and process for collating the abrasion pad using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1505109A CN1505109A (en) | 2004-06-16 |
| CN1284211C true CN1284211C (en) | 2006-11-08 |
Family
ID=34236038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02155703 Expired - Fee Related CN1284211C (en) | 2002-12-03 | 2002-12-03 | Abrasion pad collating unit and process for collating the abrasion pad using same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1284211C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2437568B (en) | 2006-04-24 | 2009-02-11 | Univ Sheffield | Electrical machines |
| CN101352834B (en) * | 2007-07-27 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad collating unit and grinding pad collating method |
| CN102528652A (en) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding device |
| CN102601722A (en) * | 2011-01-20 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | Grinding method and grinding device |
| GB2576787B (en) | 2018-09-03 | 2022-05-11 | Ge Aviat Systems Ltd | Measuring weight and balance and optimizing center of gravity |
| CN109562505A (en) * | 2018-10-24 | 2019-04-02 | 长江存储科技有限责任公司 | With the chemical-mechanical polisher for scraping fixed device |
-
2002
- 2002-12-03 CN CN 02155703 patent/CN1284211C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1505109A (en) | 2004-06-16 |
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| C10 | Entry into substantive examination | ||
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061108 Termination date: 20191203 |