CN1567409A - Driving device and method of active mode organic photogenic display - Google Patents
Driving device and method of active mode organic photogenic display Download PDFInfo
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- CN1567409A CN1567409A CN 03146709 CN03146709A CN1567409A CN 1567409 A CN1567409 A CN 1567409A CN 03146709 CN03146709 CN 03146709 CN 03146709 A CN03146709 A CN 03146709A CN 1567409 A CN1567409 A CN 1567409A
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Abstract
It is a kind of drive apparatus and method of initiative organic light emitting display, and drive element, which includes a writing element, a clearing element, a driving element, a switch element, and a storing element. Based on the automatic clear mechanism, this apparatus compensates the variation of critical voltage of each transistor element, so to improve the evenness of image. The data loading method is to charge the storing element by current source. It can adjust the on-load voltage by controlling the scale of current source and the time of charging time. Compared with the other invention, it can save a capacitor so to increase the open rate of pixel and reduce the complexity of drive mode.
Description
Technical field
The present invention relates to a kind of active organic light-emitting display drive unit and method, relate in particular to a kind of uneven drive unit of image and method of improving organic light emitting display.
Background technology
Organic light emitting display (Organic Light Emitting Display; OLED) can be divided into passive type (Passive Matrix according to type of drive; PMOLED) with active (Active Matrix; AMOLED).And so-called active driving OLED (AMOLED) promptly is to utilize thin film transistor (TFT) (Thin Film Transistor; TFT), collocation electric capacity (Capacitor) storage assembly is controlled the intensity gray scale performance of OLED.
Though cost of manufacture and the technical threshold of passive type OLED are lower, are limited by type of drive, resolution can't improve, so the application product size limitations is in about 5 inches, and product will be limited in low resolution small size market.Then need be if will obtain high meticulous and big picture in the active drive mode, so-called active driving is with the electric capacity storage assembly, so pixel still can keep original brightness after sweep trace is inswept; Under passive driving, only be scanned line options to pixel just can be lighted.Therefore under the active drive mode, OLED does not need to be driven into very high brightness, therefore can prolong the life-span of product, can realize high-resolution demand yet.OLED can realize active driving OLED in conjunction with the technology of TFT, can meet the fluency play for picture on the present monitor market and the more and more higher requirement of resolution, fully represents the above-mentioned superior characteristic of OLED.
The technology of growth TFT on glass substrate can be amorphous silicon (amorphoussilicon; A-Si) processing procedure and low temperature polycrystalline silicon (Low Temperature poly-silicon; LTPS) processing procedure, the maximum of LTPS TFT and a-Si TFT are its electrical and complicated and simple difference of processing procedure respectively.LTPS TFT has higher carrier mobility, and higher carrier mobility means that TFT can provide electric current more fully, yet more complicated on its processing procedure; Otherwise a-SiTFT then, though the carrier mobility of a-Si not as LTPS, because its processing procedure is simpler and ripe, therefore has good competitive edge on cost.
Like this, because the restriction of low temperature polycrystalline silicon (LTPS) processing procedure ability, its critical voltage of thin film transistor (TFT) (TFT) element (Threshold Voltage) and the electron mobility (Mobility) that cause manufacturing to be come out can produce variation, so the characteristic of each TFT element can be different.Use the driving circuit of commonly using 2T1C (1 electric capacity of 2 TFT transistor AND gates) when system, and when using aanalogvoltage (Analog Voltage) modulation mode with the performance GTG, between the TFT because of different pixels different qualities is arranged, even identical data voltage (Data Voltage) signal of input in the different pixels, still may produce the output current of different sizes, cause organic light-emitting diode element (OLED) to send the brightness of different sizes.Therefore the performance of image gray scale is subject to the influence of TFT element characteristic variation, and has destroyed the homogeneity (Image Uniformity) of organic LED panel image.
So, for solving the inhomogeneity shortcoming of above-mentioned panel image, U.S. Pat 6,229,506 " active-matrix LED pixel structure and method thereof (Active MatrixLight Emitting Diode Pixel Structure And Concomitant Method) ", the image element circuit that proposes a kind of 4T2C (1 electric capacity of 4 TFT transistor AND gates) is arranged, as shown in Figure 3 in this patent.This circuit uses a kind of mechanism that is called auto zero (Auto-Zero), with the variation of compensation TFT element critical voltage, improves the homogeneity of image.Its operating principle is described below:
The driving sequential of the control signal of driver circuit is divided into the stage of making zero (Auto-ZeroPhase) 410, be written into data phase (Load Data Phase) 420 and glow phase (Illuminate Phase) 430, seeing also shown in Figure 4ly, is the control signal sequential chart of Fig. 3.
Before the stage of making zero 410, transistor P3 and transistor P4 are for ending (OFF), and transistor P2 is conducting (ON), flow through Organic Light Emitting Diode (Organic LightEmitting Diode this moment; OLED) 360 electric current is the electric current of previous menu frame (Frame), is controlled by the Vsg of transistor P1 (source electrode, grid voltage are poor, promptly are stored in the voltage difference at storage unit Cs ' two ends).
Enter after the stage of making zero 410, conducting (ON) the transistor P4 of elder generation, follow conducting (ON) transistor P3, the drain electrode (Drain) of transistor P1 is connected with grid (Gate), form the connection of a diode, by (OFF) transistor P2, this moment, grid (Gate) voltage of transistor P1 can rise to a magnitude of voltage then, and this magnitude of voltage equals critical voltage (the threshold voltage that noble potential (Vdd) deducts transistor P1; Vth), that is the voltage difference that is stored in storage unit Cs ' two ends is the critical voltage of transistor P1, afterwards again with transistor P3 by (OFF), the critical voltage (Vth) of transistor P1 is stored on the storage unit Cs ', finish the action in the stage of making zero.
Next enter the loading data stage 420, if the voltage of change is Δ V on the data line (Date Line) 310, see through transistor P4 and storage unit Cc ' and connect (Couple) grid (Gate) end to transistor P1, therefore, the voltage difference that is stored in storage unit Cs ' two ends is that Δ V * [Cc '/(Cc '+Cs ')] adds the Vth that is stored in Cs ' originally, that is the Vsg of transistor P1 can comprise the Vth of transistor P1, this makes that the electric current of transistor P1 output is only relevant with the voltage (Δ V) of change on the data line 310, and is not subjected to the influence of transistorized Vth in each pixel.
Enter glow phase 430 at last again, allow this moment transistor P4 by (OFF), and make transistor P2 conducting (ON), the electric current that transistor P1 can export present menu frame (Frame) flows through Organic Light Emitting Diode 360, makes Organic Light Emitting Diode 360 elements shinny.
Though the image element circuit of this 4T2C can compensate the variation of the transistor unit critical voltage (Vth) in each pixel, improve the homogeneity of display overall image, but the element that uses comprises 2 electric capacity of 4 transistor AND gates, the very big area of display pixel because electric capacity can account for causes aperture ratio of pixels significantly to reduce.And except data line 310, sweep trace 320, power supply line (Vdd) 350, control line (Auto-Zero Line) 330 and light emitting control line (Illuminate Line) 340 operation circuits such as grade also need make zero, so therefore the complexity of type of drive can increase, cause the turntable driving IC and the data-driven IC that need to use non-standard form, increase the cost of making.
Summary of the invention
So, fundamental purpose of the present invention is to solve above-mentioned traditional defective, avoid defective to exist, the present invention can be applicable in the device of low-temperature polysilicon film transistor (LTPS-TFT) positive type organic light emitting diode display (AMOLED), to improve the uneven shortcoming of active organic light-emitting diode panel image; The complexity of the technology of the present invention type of drive is lower simultaneously, and can use the turntable driving IC and the data-driven IC of traditional passive type (Passive-Matrix) organic light emitting diode display to get final product, and can reduce manufacturing cost like this.
For reaching above-mentioned purpose, the driving element that the present invention proposes comprises that a write element, a RZ element, a driving element, switch an element and a storage unit, this device is a mechanism of utilizing auto zero, with the variation of the critical voltage that compensates each transistor unit, so as to improving the homogeneity of image.Compare with the image element circuit device of 4T2C, the present invention can save 1 electric capacity, increases aperture ratio of pixels; Simultaneously, the complexity of type of drive can reduce.
Description of drawings
Fig. 1 is a device synoptic diagram of the present invention;
Fig. 2 is the control signal sequential chart of Fig. 1;
Fig. 3 is a U.S. Pat 6,229,506 image element circuit synoptic diagram; And
Fig. 4 is the control signal sequential chart of Fig. 3.
Embodiment
Relevant detailed content of the present invention and technical descriptioon, existing conjunction with figs. is described as follows:
Seeing also shown in Figure 1ly, is device synoptic diagram of the present invention.As shown in the figure: this device comprises:
Make zero control line 130, of one data line 110, one scan line 120, shows control lines 140, one power supply lines 150;
One write element T1, the drain electrode (drain) of this write element T1 is connected with data line 110, and grid (gate) is connected with sweep trace;
One RZ element T2, the grid (gate) of this RZ element T2 is connected with the control line 130 that makes zero;
One driving element T3, the grid of this driving element T3 is connected with the source electrode (source) of above-mentioned write element T1, and its drain electrode is connected with the source electrode of above-mentioned RZ element T2, and its source electrode is connected with above-mentioned power supply line 150;
One switches elements T 4, and the grid (gate) of this switching device T4 is connected with above-mentioned demonstration control line 140, and its source electrode is connected with the source electrode of RZ element T2 and the drain electrode of driving element T3;
One storage unit Cs, this storage unit Cs has two ends, and an end is connected with the source electrode of above-mentioned driving element T3, and the source electrode of the other end and above-mentioned write element T1, the drain electrode of RZ element T2 are connected with the grid junction of driving element T3;
One light-emitting component 160, these light-emitting component 160 1 ends are anodal, are connected with the drain electrode of above-mentioned switching device T4, and the other end is a negative pole, this minus earth (GND).
Wherein, this write element T1, RZ element T2, driving element T3 and switching device T4 respectively are a thin film transistor (TFT); This storage unit Cs is a storage capacitors (StorageCapacitor); This light-emitting component 160 is to be an Organic Light Emitting Diode.
Next be described below at operating principle of the present invention: please cooperating shown in Figure 2ly simultaneously, is the control signal sequential chart of Fig. 1.Driving sequential of the present invention is to be divided into the stage of making zero (Auto-Zero Phase) 210, sweep phase (Scan Phase) 220 and (Display Phase) 230 3 stages in demonstration stage.
Before entering the stage of making zero 210, write element T1 and RZ element T2 are for ending (OFF), driving element T3 and switching device T4 are conducting (ON), the electric current that flow through light-emitting component 160 this moment is the electric current of previous menu frame (Frame), the electric current of this menu frame (Frame) is controlled by the Vsg of driving element T3 (source electrode, grid voltage are poor, promptly are stored in the voltage difference at storage unit Cs two ends).
Enter after the stage of making zero 210, conducting (ON) the RZ element T2 of elder generation, the drain electrode (Drain) of driving element T3 is connected with grid (Gate), form the connection of a diode, then again switching device T4 is ended (OFF), this can make grid (Gate) voltage of driving element T3 rise to a magnitude of voltage, this magnitude of voltage equals the critical voltage (Vth) that noble potential (Vdd) deducts transistor T 3, that is the voltage difference that is stored in storage unit Cs two ends is the critical voltage of driving element T3, again RZ element T2 is ended (OFF) afterwards, the critical voltage (Vth) of driving element T3 is stored on the storage unit Cs, finishes the action in the stage of making zero 210.
Next enter sweep phase 220, this moment, write element T1 was conducting (ON), provide certain electric current I c on the data line 110 again, this decides electric current (Ic) can be to the storage unit Cs action of charging, if deciding electric current (Ic) is Tc to the time that storage unit Cs charges, then the grid of driving element T3 (Gate) voltage can become (Vdd-Vth-(Ic * Tc/C)) (C is the electric capacity of storage unit Cs), that is the voltage difference that is stored in storage unit Cs two ends is (Ic * Tc/C) add that script is stored in the critical voltage (Vth) of the driving element T3 of storage unit Cs, therefore the Vsg of driving element T3 can comprise the critical voltage (Vth) of driving element T3, this make driving element T3 output electric current only with data line 110 on decide electric current (Ic) size, and it is relevant to storage unit Cs duration of charging (Tc) length to decide electric current I c, and is not subjected to the influence of critical voltage (Vth) variation of thin-film transistor element.
So, with regard to apparatus of the present invention and method, as long as the size of deciding electric current (Ic) on the suitable modulation data line 110, and decide the length of electric current (Ic) to storage unit Cs duration of charging (Tc), can adjust the size of current of driving element T3 output; And the size of current of driving element T3 output can be controlled, and has also just controlled the brightness that light-emitting component 160 sends, and realizes utilizing light-emitting component 160 to show the GTG performance of overall image.Again, at sweep phase 220, be the write activity that begins to carry out sweep signal from article one sweep trace, carry out a last sweep trace in regular turn.
Finish after the signal write activity of each sweep trace, enter the demonstration stage 230 more at last, this moment is with switching device T4 conducting (ON), make driving element T3 export the electric current of present menu frame (Frame), make this electric current flow through light-emitting component 160 simultaneously, allow light-emitting component 160 send the brightness of the GTG of corresponding image data.
The present invention is a mechanism of utilizing auto zero (Auto-Zero), with the variation of the critical voltage that compensates each transistor unit, so as to improving the homogeneity of image.Simultaneously, with U.S. Pat 6,229, the 4T2C image element circuit that proposes in 506 relatively, the present invention has following advantage: the present invention is the image element circuit device of a 4T1C, electric capacity is very big for a pixel area occupied again, in being to use the present invention because employedly saved 1 electric capacity, so can increase aperture ratio of pixels than common; In addition, the complexity of type of drive can also reduce, and can use the turntable driving IC and the data-driven IC of known passive type (Passive-Matrix) organic light emitting diode display to get final product, and manufacturing cost will greatly be reduced.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within the claim scope of the present invention.
Claims (8)
1. active organic light-emitting display drive unit, the component arrangement of each pixel that described drive unit is display frame is characterized in that described device comprises:
One data line (110), one scan line (120), the control line (130) that makes zero, one shows control line (140), a power supply line (150);
One write element (T1), the drain electrode of said write element (T1) is connected with data line (110), and grid is connected with sweep trace (120);
One RZ element (T2), the grid of described RZ element (T2) is connected with the control line that makes zero (130);
One driving element (T3), the grid of described driving element (T3) is connected with the source electrode of above-mentioned write element (T1), and its drain electrode is connected with the source electrode of above-mentioned RZ element (T2), and its source electrode is connected with above-mentioned power supply line (150);
One switches element (T4), and the grid of described switching device (T4) is connected with above-mentioned demonstration control line (140), and its source electrode is connected with the source electrode of RZ element (T2) and the drain electrode of driving element (T3);
One storage unit (Cs), described storage unit (Cs) has two ends, one end is connected with above-mentioned driving element (T3) source electrode, and the grid junction of the source electrode of the other end and above-mentioned write element (T1), the drain electrode of RZ element (T2) and driving element (T3) is connected; And
One light-emitting component (160), described light-emitting component (160) one ends are anodal, are connected with the drain electrode of above-mentioned switching device (T4), and the other end is a negative pole, described minus earth (GND).
2. active organic light-emitting display drive unit according to claim 1 is characterized in that said write element (T1) is a thin film transistor (TFT).
3. active organic light-emitting display drive unit according to claim 1 is characterized in that described RZ element (T2) is a thin film transistor (TFT).
4. active organic light-emitting display drive unit according to claim 1 is characterized in that described driving element (T3) is a thin film transistor (TFT).
5. active organic light-emitting display drive unit according to claim 1 is characterized in that described switching device (T4) is a thin film transistor (TFT).
6. active organic light-emitting display drive unit according to claim 1 is characterized in that described storage unit (Cs) is a storage capacitors.
7. active organic light-emitting display drive unit according to claim 1 is characterized in that described light-emitting component (160) is an Organic Light Emitting Diode.
8. active organic light-emitting display driving method is characterized in that described driving method comprises:
Sequential be will drive and the stage of making zero (210), sweep phase (220) and demonstration stage (230) three phases will be divided into;
Enter the stage of making zero (210) before, write element (T1) and RZ element (T2) are for ending (OFF), driving element (T3) and switching device (T4) are conducting (ON), the electric current that flow through light-emitting component (160) this moment is the electric current of previous menu frame (Frame), and described electric current is controlled by the Vsg of driving element (T3) (source electrode, grid voltage poor);
Enter the stage of making zero (210) afterwards, elder generation's conducting (ON) RZ element (T2), the drain electrode of driving element (T3) is connected with grid, form the connection of a diode, then again switching device (T4) T4 is ended, this can make grid (Gate) voltage of driving element (T3) T3 rise to a magnitude of voltage, this magnitude of voltage equals the critical voltage (Vth) that noble potential (Vdd) deducts driving element (T3), that is the voltage difference that is stored in storage unit (Cs) two ends is the critical voltage of driving element (T3), again RZ element (T2) is ended (OFF) afterwards, the critical voltage (Vth) of driving element (T3) is stored on the storage unit (Cs), finishes the stage of making zero the action of (210);
Next enter sweep phase (220), write element this moment (T1) is conducting (ON), provide certain electric current (Ic) on the data line (110) again, this decides electric current (Ic) can be to storage unit (Cs) action of charging, if deciding electric current (Ic) is Tc to the time that storage unit (Cs) charges, then grid (Gate) voltage of driving element (T3) T3 can become (Vdd-Vth-(Ic * Tc/C)), wherein C is the electric capacity of storage unit (Cs), that is the voltage difference that is stored in storage unit (Cs) two ends is (Ic * Tc/C) add that script is stored in the critical voltage (Vth) of the driving element (T3) of storage unit (Cs), so, the Vsg of driving element (T3) can comprise the critical voltage (Vth) of driving element (T3), this make driving element (T3) output electric current only with data line (110) on decide electric current (Ic) size, and it is relevant to storage unit (Cs) duration of charging (Tc) length to decide electric current I c;
Whereby, suitably modulation data line (110) is gone up the size of deciding electric current (Ic), is reached and decide the length of electric current (Ic) to storage unit (Cs) Cs duration of charging (Tc), can adjust the size of current of change driving element (T3) output, also control the brightness that light-emitting component (160) sends.
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| CN 03146709 CN1567409A (en) | 2003-07-09 | 2003-07-09 | Driving device and method of active mode organic photogenic display |
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| CN 03146709 CN1567409A (en) | 2003-07-09 | 2003-07-09 | Driving device and method of active mode organic photogenic display |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353402C (en) * | 2005-05-09 | 2007-12-05 | 友达光电股份有限公司 | Display unit |
| CN100447844C (en) * | 2004-05-20 | 2008-12-31 | 三洋电机株式会社 | Current-driven pixel circuit |
| US7629951B2 (en) | 2005-04-21 | 2009-12-08 | Au Optronics Corp. | Display units |
| CN1996454B (en) * | 2005-12-30 | 2011-12-07 | 乐金显示有限公司 | Organic electroluminescent display device |
| CN101192374B (en) * | 2006-11-27 | 2012-01-11 | 奇美电子股份有限公司 | Organic luminous display panel and its voltage drive organic light emitting pixel |
| CN103093724A (en) * | 2013-03-04 | 2013-05-08 | 陈鑫 | Novel active matrix/organic light emitting diode (AMOLED) pixel driving circuit |
| CN105513535A (en) * | 2016-01-29 | 2016-04-20 | 上海天马有机发光显示技术有限公司 | Pixel driving circuit, driving method thereof and array substrate |
| CN107369410A (en) * | 2017-08-31 | 2017-11-21 | 京东方科技集团股份有限公司 | Image element circuit, driving method and display device |
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2003
- 2003-07-09 CN CN 03146709 patent/CN1567409A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100447844C (en) * | 2004-05-20 | 2008-12-31 | 三洋电机株式会社 | Current-driven pixel circuit |
| US7629951B2 (en) | 2005-04-21 | 2009-12-08 | Au Optronics Corp. | Display units |
| CN100353402C (en) * | 2005-05-09 | 2007-12-05 | 友达光电股份有限公司 | Display unit |
| CN1996454B (en) * | 2005-12-30 | 2011-12-07 | 乐金显示有限公司 | Organic electroluminescent display device |
| CN101192374B (en) * | 2006-11-27 | 2012-01-11 | 奇美电子股份有限公司 | Organic luminous display panel and its voltage drive organic light emitting pixel |
| CN103093724A (en) * | 2013-03-04 | 2013-05-08 | 陈鑫 | Novel active matrix/organic light emitting diode (AMOLED) pixel driving circuit |
| CN105513535A (en) * | 2016-01-29 | 2016-04-20 | 上海天马有机发光显示技术有限公司 | Pixel driving circuit, driving method thereof and array substrate |
| CN107369410A (en) * | 2017-08-31 | 2017-11-21 | 京东方科技集团股份有限公司 | Image element circuit, driving method and display device |
| WO2019041835A1 (en) * | 2017-08-31 | 2019-03-07 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof and display device |
| US11341911B2 (en) | 2017-08-31 | 2022-05-24 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel circuit, driving method thereof and display device |
| CN107369410B (en) * | 2017-08-31 | 2023-11-21 | 京东方科技集团股份有限公司 | Pixel circuit, driving method and display device |
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