CN100365690C - Current driving device and method for active organic light-emitting diode - Google Patents
Current driving device and method for active organic light-emitting diode Download PDFInfo
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- CN100365690C CN100365690C CNB031483623A CN03148362A CN100365690C CN 100365690 C CN100365690 C CN 100365690C CN B031483623 A CNB031483623 A CN B031483623A CN 03148362 A CN03148362 A CN 03148362A CN 100365690 C CN100365690 C CN 100365690C
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Abstract
The present invention relates to a current driver and a method thereof for an active organic light emitting diode. The device comprises two adjacent sub-pixels (an odd sub-pixel and an even sub-pixel), wherein each sub-pixel comprises a programming element, a switching element, a driving element, a control element, a storage element and a light emitting element. A driving circuit comprises an odd intelligent line of the odd sub-pixel, an even intelligent line of the even sub-pixel, data lines shared by the odd sub-pixel and the even sub-pixel, a scan line, a power supply line and a common cathode line. The present invention is used for avoiding the phenomenon of nonuniform images of a panel of the active organic light emitting diode, and simultaneously, the numbers of the data lines can be saved.
Description
Technical field
The present invention relates to a kind of current driving device of positive type organic light emitting diode display, particularly a kind ofly improve the drive unit that the uneven data current of active organic light-emitting diode panel image writes (Current Programmed).
Background technology
Organic light emitting display can be divided into passive type and active by type of drive.And so-called active driving organic light emitting display is to utilize thin film transistor (TFT), and collocation electric capacity stores signal, controls the intensity gray scale performance of organic light emitting display.
Though the cost of manufacture and the technical threshold of passive organic light-emitting display are lower, are limited by type of drive, resolution can't improve, so the size limitations of application product is in about 5 inches, and product will be limited in the undersized market of low resolution.Then must be if will obtain high meticulous and big picture in the active drive mode, so-called active driving is to store signal with electric capacity, so after sweep trace was scanned, pixel still can keep original brightness; As for passive driving, only be scanned line options to pixel just can be lighted.Therefore under the active drive mode, organic light emitting display does not need to be driven into very high brightness, therefore can reach preferable life-span performance, can reach high-resolution demand yet.Organic light emitting display combination film transistor technology can be realized active driving organic light emitting display, can meet the fluency of playing for picture on the present monitor market, and the more and more higher requirement of resolution, demonstrated fully the above-mentioned advantageous characteristic of organic light emitting display.
The technology of growth thin film transistor (TFT) on glass substrate can be amorphous silicon (amorphoussilicon; A-Si) processing procedure and low temperature polycrystalline silicon (Low Temperature poly-silicon; LTPS) processing procedure, the maximum difference of low-temperature polysilicon film transistor and amorphous silicon film transistor is its electrical and complicated and simple difference of processing procedure.Low-temperature polysilicon film transistor has higher carrier mobility, and higher carrier mobility means that thin film transistor (TFT) can provide electric current more fully, however on its processing procedure but than very complicated; The amorphous silicon membrane transistor is then opposite, though the carrier mobility of amorphous silicon not as low temperature polycrystalline silicon, because its processing procedure is simpler and ripe, therefore has good competitive edge on cost.
So because the restriction of low temperature polycrystalline silicon processing procedure ability, its critical voltage of thin-film transistor element and the electron mobility that cause manufacturing to be come out can produce variation, so the characteristic of each thin-film transistor element can be different.When drive system is used aanalogvoltage modulation mode with the performance GTG, characteristic difference because of the thin film transistor (TFT) of different pixels, even so import identical data voltage signal, but can make Organic Light Emitting Diode produce different output currents, cause the brightness difference that the organic light-emitting diode element of different pixels sends on the display panel.This phenomenon can make organic LED panel demonstrate the bad image of GTG, the homogeneity of havoc panel image.
So, for solving the shortcoming of above-mentioned panel image uniformity difference, U.S. Pat 6,229,506 " Active Matrix Light Emitting Diode Pixel Structure AndConcomitant Method ", proposed a kind of mechanism of using data current to write, the variation of its critical voltage of compensation film transistor unit and electron mobility is to improve the homogeneity of image.As shown in Figure 3, be U.S. Pat 6,229, the circuit diagram of 506 pixel.This circuit operation principle is described below:
When scanning, transistor P1 and transistor P3 are conducting (ON), and transistor N1 is by (OFF), at this moment data current (the I on the data line 31
Data) the transistor P1 that can flow through, if this data current (I
Data) be not equal to the electric current (I of the transistor P2 that flows through
P2), then have an electric current (I
c) storage unit Cs is carried out charge or discharge, its size of current equals data current (I
Data) and the transistor P2 electric current (I that flows through
P2) poor.
So the action of storage unit Cs charge or discharge can make the electric current (I of the transistor P2 that flows through
P2) increase or reduce, and the action of storage unit Cs charge or discharge can last till the size of current (I as the transistor P2 that flows through always
P2) equal data current (I
Data) time.Size of current (I as the transistor P2 that flows through
P2) equal data current (I
Data) time, the voltage difference at storage unit Cs two ends just in time can provide transistor P2 circulating current (I
P2) equal data current (I
Data) time required Vsg (source electrode, grid voltage poor).Afterwards transistor P1 and transistor P3 are ended, can finish scanning, and enter the demonstration stage.After entering the demonstration stage, making transistor N1 is conducting, and the S of transistor P2 end (source terminal) is connected to power supply line 33, because the voltage difference at storage unit Cs two ends just in time can provide transistor P2 circulating current (I
P2) equal data current (I
Data) time required Vsg (source electrode, grid voltage poor), the size of current (I of transistor P2 so the electric current of the Organic Light Emitting Diode of flowing through (OLED) 34 can equal to flow through
P2) be data current (I
Data) size, and make Organic Light Emitting Diode 34 send corresponding data current (I
Data) big or small brightness.
The positive type organic light emitting diode display of above-mentioned image element circuit technology, it drives framework as shown in Figure 4.The initial of a menu frame 40 (1Frame=1/60sec) is the write activity 401 that begins to carry out present menu frame 40 data currents from article one sweep trace, makes the voltage difference at storage unit Cs two ends in the pixel that P2 circulating current (I just in time can be provided
P2) equal data current (I
Data) time required Vsg.Article one, after sweep trace 32 is finished write activity 401, and then second sweep trace 32 carries out the write activity 401 of present menu frame 40 data currents, and the organic light-emitting diode element 34 on this moment article one sweep trace 32 can be by being same as the electric current that writes the data current size, make organic light-emitting diode element 34 actions on article one sweep trace 32 show the brightness of 402 present pictures.
After second sweep trace 32 is finished write activity 401, can take turns the write activity 401 that carries out present menu frame 40 data currents by the 3rd sweep trace 32, and the organic light-emitting diode element 34 on this moment second sweep trace can be by being same as the electric current that writes the data current size, make organic light-emitting diode element 34 on the second sweep trace 32 show the brightness of 402 present pictures.
Carry out a last sweep trace 32 in regular turn always and finish the write activity 401 of menu frame 40 data currents, the write activity 401 of next menu frame 40 data current is carried out in accent by article one sweep trace 32 again.
But above-mentioned patent must be used colored low-temperature polysilicon film transistor (C-TFT LTPS) processing procedure of P type (P-Type) and N type (N-Type), and the complicacy of processing procedure can improve relatively, thereby manufacturing cost also increases relatively.
Summary of the invention
So, fundamental purpose of the present invention, be to solve above-mentioned traditional shortcoming, for avoiding the existence of this defective, the present invention can realize the type of drive that data current writes, with the variation of its critical voltage of compensation film transistor unit and electron mobility, reach and improve the uneven phenomenon of active organic light-emitting diode panel image.Can save simultaneously the number of data line, only need the number of half data line of Known designs, thereby, manufacturing cost can be saved.
For achieving the above object, the drive unit that the present invention proposes is one or two adjacent sub-pixel (odd number sub-pixel and even sub-pixel), and each sub-pixel drive unit all comprises 4 thin film transistor (TFT)s and 1 electric capacity; Again, each sub-pixel comprises a write element, and one switches element, a driving element, one control element, one storage unit, a light-emitting component, driver circuit then comprise the odd number enable line (Odd Line Enable) of odd number sub-pixel, the even number enable line of even sub-pixel (Even Line Enable), the data line that one odd number sub-pixel and even sub-pixel are shared, one scan line, a power supply line, cathode line altogether.
Description of drawings
Fig. 1 is a device synoptic diagram of the present invention.
Fig. 2 is the driving framework of device shown in Figure 1.
Fig. 3 is a U.S. Pat 6,229,506 image element circuit synoptic diagram.
Fig. 4 is the driving framework of image element circuit shown in Figure 3.
Embodiment
Relevant detailed content of the present invention and technical descriptioon, existing accompanying drawings is as follows:
Seeing also shown in Figure 1ly, is device synoptic diagram of the present invention.As shown in the figure: the drive unit that the present invention proposes is one or two adjacent sub-pixel (odd number sub-pixel 10 and even sub-pixel 20), and each sub-pixel drive unit all comprises 4 thin film transistor (TFT)s and 1 electric capacity; Odd number sub-pixel 10 and even sub-pixel 20 respectively comprise a write element T1 and a T1 ', and one switches elements T 2 and T2 ', a driving element T3 and a T3 ', a control element T4 and a T4 ', a storage unit C and a C ', a light- emitting component 11 and 21; Driver circuit then comprises the odd number enable line 101 and a power supply line 52 of odd number sub-pixel 10, the even number enable line 201 of even sub-pixel 20 and a power supply line 52 ', the data line 50 that one odd number sub-pixel 10 and even sub-pixel 20 are shared, one scan line 51, cathode line 53 altogether.
Wherein, the source electrode of this write element T1, T1 ' is connected with data line 50; The grid of this switching device T2, T2 ' is connected with the grid of above-mentioned write element T1, T1 ', and its source electrode is connected with data line 50; The grid of this driving element T3, T3 ' is connected with the drain electrode of above-mentioned write element T1, T1 ', and its source electrode is connected with above-mentioned power supply line 52,52 '; The grid of this control element T4, T4 ' is connected with above-mentioned sweep trace 51, and its source electrode is connected with above-mentioned odd number enable line 101 (even number enable line 201), and its drain electrode is connected with the grid of above-mentioned switching device T2, T2 '.
And this storage unit C, C ' have two ends, and an end is connected with above-mentioned driving element T3, the source electrode of T3 ', and the grid of the other end and above-mentioned driving element T3, T3 ' is connected with the junction of the drain electrode of write element T2, T2 '; These light- emitting component 11,21 1 ends are anodal, are connected with the drain electrode of above-mentioned driving element T3, T3 ', and the other end is a negative pole, is connected with above-mentioned common cathode line 53.
Driving framework of the present invention is that the cycle (1Frame=1/60sec) with a menu frame 60 is divided into during two as shown in Figure 2, and one is (Display Period) 602 during showing for (Write Period) during writing 601.
During writing 601, common cathode line 53 is risen to noble potential (Vdd), light- emitting components 11 and 21 all on the panel can stop the shinny of last picture, and begin to carry out the write activity of present menu frame 60 data currents from article one sweep trace 51, make the voltage difference at storage unit in the pixel (C and C ') two ends just in time can provide the electric current of driving element T3 and T3 ' circulation to equal data current (I
Data) time required Vsg (source electrode, grid voltage poor), carry out the write activity that a last sweep trace 51 is finished data current in regular turn always.Finish during the writing of each sweep trace 51 after 601, again common cathode line 53 is reduced to zero potential (GND) and during entering demonstration 602, light-emitting component 11 on the panel in each pixel and 21 can be by being same as the electric current that writes the data current size, the brightness that makes the light- emitting component 11 and 21 of display send present picture.
Operating principle of the present invention is described as follows: during writing 601 o'clock, because common cathode line 53 rises to noble potential (Vdd), light- emitting component 11 and 21 can't be shinny because of being in reverse blas, the electric current vanishing of flow through light- emitting component 11 and 21.
So when sweep trace 51 was sent scanning drive signal, the control element T4 ' of 10 control element T4 and even sub-pixel 20 was conducting in the odd number sub-pixel; So, signal on the odd number enable line 101 can make write element T1 and the switching device T2 conducting in the odd number sub-pixel 10 by the conducting of control element T4, and the conducting of the signal on the even number enable line 201 by control element T4 ' ends write element T1 ' and switching device T2 ' in the even sub-pixel 20.Meanwhile, can send the data current (I of odd number sub-pixel 10 on the data line 50
Data_odd).
Again, if this moment the data current (I on the data line 50
Data_odd) be not equal to the electric current (I of the driving element T3 that flows through
T3), then have an electric current (I
c) storage unit C is carried out the action of charge or discharge, its size of current equals data current (I
Data_odd) with flow through the electric current (I of driving element T3
T3) poor.The action of storage unit C charge or discharge can make the electric current (I of the driving element T3 that flows through
T3) increase or reduce, and the action of storage unit C charge or discharge can last till the size of current (I as the driving element T3 that flows through always
T3) equal data current (I
Data_odd) time.And, as the size of current (I of the driving element T3 that flows through
T3) equal data current (I
Data_odd) time, this moment, the voltage difference at storage unit C two ends just in time can provide driving element T3 circulating current (I
T3) equal data current (I
Data_odd) time required Vsg.
Next, the signal on the odd number enable line 101 can make write element T1 and switching device T2 in the odd number sub-pixel 10 end by the conducting of control element T4; And the conducting of the signal on the even number enable line 201 by control element T4 ' makes write element T1 ' and switching device T2 ' conducting in the even sub-pixel 20.At the same time, can send the data current (I of even sub-pixel 20 on the data line 50
Data_even).
If this moment the data current (I on the data line 50
Data_even) be not equal to the electric current (I of the driving element T3 ' that flows through
T3'), then have an electric current (I
c') storage unit C ' is carried out the action of charge or discharge, its size of current equals data current (I
Data_even) with flow through the electric current (I of driving element T3 '
T3') poor.The action of storage unit C ' charge or discharge can make the electric current (I of the T3 ' that flows through
T3') increase or reduce, and the action of storage unit Cs ' charge or discharge can last till the size of current (I as the driving element T3 ' that flows through always
T3') equal data current (I
Data_even) time.And the size of current (I of the driving element T3 ' that ought flow through
T3') equal data current (I
Data_even) time, this moment, the voltage difference at storage unit C ' two ends just in time can provide driving element T3 ' circulating current (I
T3') equal data current (I
Data_even) time required Vsg '.
Finish after the writing of each sweep trace 51, again common cathode line 53 is reduced to zero potential and during entering demonstration 602, light- emitting component 11 and 21 is in along bias voltage and conducting is shinny, because required Vsg and Vsg ' when the voltage difference at storage unit Cs and Cs ' two ends just in time can provide driving element T3 and T3 ' circulating current to equal data current, so the light-emitting component 11 on the panel in each pixel and 21 can make the light- emitting component 11 and 21 of display send the required brightness of present picture by being same as the electric current of the size of current that writes data.
Comprehensive above explanation, the current driving device of active organic light-emitting diode has following advantage:
(1) the present invention can realize the type of drive that data current writes, with the compensation film crystal The variation of its critical voltage of tube elements and electron mobility reaches and improves active organic light-emitting The phenomenon that the diode panel image is inhomogeneous.
(2) the present invention can save the number of data wire 50, only needs a half of Known designs According to the number of line 50, thereby, can save circuit cost, reduce modular system pressing system Cause this, increase the robustness of modular system connection etc.
(3) the present invention must not use colored low-temperature polysilicon film transistor (C-TFT LTPS) processing procedure of P type (P-Type) and N type (N-Type), and the cost of manufacturing can reduce.
(4) the technology of the present invention can make organic light-emitting diode element be in the situation of reverse blas for some time when operation, under this operator scheme, can increase the life-span that organic light-emitting diode element uses.
Obviously, for a person skilled in the art, under the prerequisite that does not deviate from the spirit and scope of the present invention, can make various changes and variation to the present invention.Therefore, various change of the present invention, the content that changes by appending claims and equivalent thereof contain.
Claims (6)
1. the current driving device of an active organic light-emitting diode, described drive unit comprises one or two adjacent sub-pixel, i.e. odd number sub-pixel (10) and even sub-pixel (20);
It is characterized in that: each described odd number sub-pixel (10) comprises odd number enable line (101), and each described even sub-pixel (20) comprises even number enable line (201), and the drive unit of each described sub-pixel also comprises:
The data line (50) that one described odd number sub-pixel (10) and described even sub-pixel (20) are shared;
One scan line (51);
One power supply line (52,52 ');
Have cathode line (53) altogether;
One write element (T1, T1 '), the source electrode of said write element (T1, T1 ') is connected with described data line (50);
One switches element (T2, T2 '), and the grid of described switching device (T2, T2 ') is connected with the grid of said write element (T1, T1 '), and its source electrode is connected with described data line (50);
One driving element (T3, T3 '), the grid of described driving element (T3, T3 ') is connected with the drain electrode of said write element (T1, T1 '), and its source electrode is connected with described power supply line (52,52 ');
One control element (T4, T4 '), the grid of described control element (T4, T4 ') is connected with described sweep trace (51), its source electrode is connected with described odd number enable line (101) or described even number enable line (201), and its drain electrode is connected with the grid of described switching device (T2, T2 ');
One storage unit (C, C '), described storage unit (C, C ') has two ends, one end is connected with the source electrode of described driving element (T3, T3 '), and the grid of the other end and described driving element (T3, T3 ') is connected with the junction of the drain electrode of said write element (T1, T1 ');
One light-emitting component (11,21), an end of described light-emitting component (11,21) are anodal, are connected with the drain electrode of described driving element (T3, T3 '), and the other end is a negative pole, is connected with described common cathode line (53).
2. the current driving device of active organic light-emitting diode according to claim 1 is characterized in that, said write element (T1, T1 ') is a thin film transistor (TFT).
3. the current driving device of active organic light-emitting diode according to claim 1 is characterized in that, described switching device (T2, T2 ') is a thin film transistor (TFT).
4. the current driving device of active organic light-emitting diode according to claim 1 is characterized in that, described driving element (T3, T3 ') is a thin film transistor (TFT).
5. the current driving device of active organic light-emitting diode according to claim 1 is characterized in that described control element (T4, T4 ') is a thin film transistor (TFT).
6. the current driving device of active organic light-emitting diode according to claim 1 is characterized in that, described storage unit (C, C ') is a storage capacitors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031483623A CN100365690C (en) | 2003-06-30 | 2003-06-30 | Current driving device and method for active organic light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031483623A CN100365690C (en) | 2003-06-30 | 2003-06-30 | Current driving device and method for active organic light-emitting diode |
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| CN1567416A CN1567416A (en) | 2005-01-19 |
| CN100365690C true CN100365690C (en) | 2008-01-30 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9318053B2 (en) | 2005-07-04 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| CN101174388B (en) * | 2006-10-31 | 2012-07-04 | 奇美电子股份有限公司 | NTSC band rejection filter with parallel structure and filtering method thereof |
| CN101192372B (en) * | 2006-11-28 | 2012-07-04 | 奇美电子股份有限公司 | Display panel and its structure |
| CN101777319B (en) * | 2010-02-05 | 2012-05-02 | 深超光电（深圳）有限公司 | Pixel structure |
| CN101868093B (en) * | 2010-06-08 | 2012-11-28 | 友达光电股份有限公司 | Driving circuit used for current driving element and luminous device |
| CN104134426B (en) * | 2014-07-07 | 2017-02-15 | 京东方科技集团股份有限公司 | Pixel structure and driving method thereof, and display device |
| CN104112427B (en) * | 2014-07-21 | 2017-10-13 | 京东方科技集团股份有限公司 | Image element circuit and its driving method and display device |
| TWI646515B (en) * | 2018-01-19 | 2019-01-01 | 友達光電股份有限公司 | Display device |
| CN114325142B (en) * | 2020-09-30 | 2024-03-29 | 瀚宇彩晶股份有限公司 | Method for testing touch display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229506B1 (en) * | 1997-04-23 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
| US6380689B1 (en) * | 1999-10-06 | 2002-04-30 | Pioneer Corporation | Driving apparatus for active matrix type luminescent panel |
| CN1348163A (en) * | 2000-10-12 | 2002-05-08 | 精工爱普生株式会社 | Organic electroluminescent element-containing driving circuit, electronic apparatus and electro-optical apparatus |
| JP2003043995A (en) * | 2001-07-31 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Active matrix type oled display device and its driving circuit |
-
2003
- 2003-06-30 CN CNB031483623A patent/CN100365690C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229506B1 (en) * | 1997-04-23 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
| US6380689B1 (en) * | 1999-10-06 | 2002-04-30 | Pioneer Corporation | Driving apparatus for active matrix type luminescent panel |
| CN1348163A (en) * | 2000-10-12 | 2002-05-08 | 精工爱普生株式会社 | Organic electroluminescent element-containing driving circuit, electronic apparatus and electro-optical apparatus |
| JP2003043995A (en) * | 2001-07-31 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Active matrix type oled display device and its driving circuit |
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