CN1564336A - Preparing high giant magnetic resistance effect nano multiplayer membrane on silicon-based chip by sputtering process and its prepn. method - Google Patents
Preparing high giant magnetic resistance effect nano multiplayer membrane on silicon-based chip by sputtering process and its prepn. method Download PDFInfo
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- CN1564336A CN1564336A CN 200410033686 CN200410033686A CN1564336A CN 1564336 A CN1564336 A CN 1564336A CN 200410033686 CN200410033686 CN 200410033686 CN 200410033686 A CN200410033686 A CN 200410033686A CN 1564336 A CN1564336 A CN 1564336A
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Abstract
In the invention, tantalum 1-4nm, ferro nickel 1-4nm, copper l-3nm, and cobalt 1-4nm material layers are sputtering deposited on surface of silicon single-crystal substrate in (111) orientation in sequence. the film in multiple layer is in simple structure and gigantic magneto resistor value reaches to 100%. Operation of sputtering deposition is carried out by magnetron sputtering technique: silicone base plate is put on rotatable table, and target materials are installed on own target platform. Based on thickness of each material to be sputtered, current and voltage applied are adjusted. Features are: simple procedures, easy of operation and controllable thickness.
Description
Technical field
The present invention relates to a kind of high giant magnetoresistance effect nano-multilayer film, specifically, be meant a kind of employing sputtering method high giant magnetoresistance effect of preparation and nanometer multilayer membrane material simple in structure and preparation method of nano-multilayer film thereof on (111) orientation silicon single crystal substrate.
Background technology
The lotus energy particle bombardment surface of solids (target), and the phenomenon that solid atom or molecule are penetrated is called " sputter ".Should " sputter " method today be widely used in film preparation, the compound film that comprises metal, alloy, semiconductor, fluoride, oxide, sulfide, selenides, tellurides and III-V family, II-VI family element, and silicide, carbide and boride.
Magneto-resistance effect is meant the material phenomenon that resistance changes under the action of a magnetic field.The multilayer film giant magnetoresistance effect can reach 50%, but its saturation field is very big, and complicated process of preparation.For solving this problem of high saturation field, the multilayer film giant magnetoresistance effect has proposed the spin valve structure of ferromagnetic layer (free layer)/separator (nonmagnetic layer)/ferromagnetic layer (pinning layer)/inverse ferric magnetosphere, inverse ferric magnetosphere in this structure has shunting action, reduced magneto-resistance effect, and the inverse ferric magnetosphere thermal stability is relatively poor, can't satisfy the demand of required making device.
Summary of the invention
One of purpose of the present invention is to disclose a kind of silicon single crystal that utilizes as substrate, and deposits the method for high giant magnetoresistance effect nanometer multilayer membrane material at its surface sputtering.
Two of purpose of the present invention is to disclose a kind of have high magneto-resistance effect and nanometer multilayer membrane material simple in structure.
A kind of method that adopts sputtering method to prepare high giant magnetoresistance effect nano-multilayer film on silicon single crystal substrate of the present invention comprises the following steps:
(1), tantalum, ferronickel, copper, cobalt target are installed on target platform separately;
(2), with silicon single crystal substrate clean, oven dry, be installed on the substrate turntable;
(3), vacuumize, make sputtering chamber vacuum degree reach～3 * 10
-4Pa;
(4), high-purity argon gas is introduced sputtering chamber, reach required partial pressure of ar gas value 0.5～1.5Pa;
(5), each target is carried out pre-sputter 1～5min, electric current 0.1～0.3A, voltage 30～300V;
(6), silicon single crystal substrate is carried out reverse sputtering 5～10min, electric current 5～15A;
(7), successively open the target power supply of required separately sputtering sedimentation target, regulate the substrate turntable, and carry out the sputtering sedimentation target in proper order, its each layer sedimentary condition by tantalum, ferronickel, copper, cobalt:
Tantalum layer: electric current 0.1～0.3A, voltage 300～400V;
Nifesphere: electric current 0.1～0.5A, voltage 150～350V;
Copper layer: electric current 0.01～0.2A, voltage 200～350V;
Cobalt layer: electric current 0.1～1A, voltage 200～350V;
(8), sputtering sedimentation finishes, and takes out the silicon chip that sputter has multilayer film.
A kind of high giant magnetoresistance effect nano-multilayer film of the present invention, it is the high giant magnetoresistance effect multi-layer film material of sputter multilayer on the silicon single crystal surface, its described nanometer multilayer membrane material is tantalum, ferronickel, copper and cobalt, and described silicon single crystal has (111) orientation, and mixes.
Described high giant magnetoresistance effect nano-multilayer film, its giant magnetoresistance value is up to 100%.
Described high giant magnetoresistance effect nano-multilayer film can be used to make magnetic reading head in Magnetic Sensor, the magnetic memory, location guide device.
The high giant magnetoresistance effect nanometer multilayer membrane material that the present invention prepares is compared with present existing same type of material, has following advantage:
1) simple in structure, be suitable for practicability;
2) make the giant magnetoresistance value up to 100% owing to the silicon single crystal substrate that adopts (111) orientation and mix for " n " type;
3) owing to adopt silicon single crystal substrate, can with the semiconductor integrated circuit technical compatibility.
Description of drawings
Fig. 1 is the material structure schematic diagram that the present invention prepares.
Fig. 2 is the equipment schematic top plan view of preparation material of the present invention.
Fig. 3 is the magneto-resistor curve chart of material of the present invention.
Fig. 4 is the magneto-resistor curve chart of the another kind of material of the present invention.
Among the figure: 1. sputtering chamber 2. substrate turntables 3. substrates 6. charge valves
7. bleed-off passage 301. tantalum layers 302. nifespheres 303. bronze medal layers 304. cobalt layer
401. the first target platform, 402. second target platforms 403. the 3rd target platform 404. the 4th target platform
501. target power supply 502. target power supplies 503. target power supplies 504. target power supplies
Embodiment
Below will the present invention is further illustrated by specific embodiment.
Giant magnetoresistance effect is meant that the resistivity of material is subjected to the variation of magnetized state and presents the phenomenon of remarkable change.The present invention utilizes different magnetospheric coercive force differences, and promptly its magnetization inversion field difference changes two magnetospheric magnetization relative orientations, obtains giant magnetoresistance effect.
The present invention is a kind of by adopting sputtering method to prepare high giant magnetoresistance effect nanometer multilayer membrane material on silicon (Si) monocrystal chip; this nanometer multilayer membrane material is made up of tantalum (Ta), ferronickel (NiFe), copper (Cu), cobalt (Co) layer, also can be on cobalt (Co) layer again sputtering sedimentation one deck tantalum (Ta) make protective layer.Its silicon (Si) monocrystalline has (111) orientation and mixes.
Preparation method of the present invention comprises the following steps:
(1), tantalum, ferronickel, copper, cobalt target are installed on target platform separately;
(2), with silicon single crystal substrate clean, oven dry, be installed on the substrate turntable;
(3), vacuumize, make sputtering chamber vacuum degree reach～3 * 10
-4Pa;
(4), high-purity argon gas is introduced sputtering chamber, reach required partial pressure of ar gas value 0.5～1.5Pa;
(5), each target is carried out pre-sputter 1～5min, electric current 0.1～0.3A, voltage 30～300V;
(6), silicon single crystal substrate is carried out reverse sputtering 5～10min, electric current 5～15A;
(7), successively open the target power supply of required separately sputtering sedimentation target, regulate the substrate turntable, and carry out the sputtering sedimentation target in proper order, its each layer sedimentary condition by tantalum, ferronickel, copper, cobalt:
Tantalum layer: electric current 0.1～0.3A, voltage 300～400V;
Nifesphere: electric current 0.1～0.5A, voltage 150～350V;
Copper layer: electric current 0.01～0.2A, voltage 200～350V;
Cobalt layer: electric current 0.1～1A, voltage 200～350V;
(8), sputtering sedimentation finishes, and takes out the silicon chip that sputter has nano-multilayer film.
Example 1: adopt magnetically controlled sputter method to prepare tantalum (Ta) layer 1.5nm, ferronickel (NiFe) layer 2.1nm, copper (Cu) layer 2.3nm, cobalt (Co) layer 2nm nano electromagnetic resistance film on (111) orientation silicon (Si) monocrystal chip having.Film forming apparatus is chosen the JCK500 equipment that Beijing instrument plant produces, and the vertical view of equipment sees also shown in Figure 2.
(1), each target is installed on target platform separately
Tantalum (Ta) target: with diameter is that tantalum (Ta) target of 60mm, thick 3mm is installed on the first target platform, the 401 radio frequency targets;
Ferronickel (NiFe) target: with diameter is that ferronickel (NiFe) target of 60mm, thick 3mm is installed on the second target platform, the 402 electromagnetism targets;
Copper (Cu) target: with diameter is that copper (Cu) target of 50mm, thick 3mm is installed on the 3rd target platform 403 permanent magnetism targets;
Cobalt (Co) target: with diameter is that cobalt (Co) target of 60mm, thick 3mm is installed on the 4th target platform 404 electromagnetism targets;
(2), with silicon (Si) monocrystal chip 3 of 6 * 16mm clean, oven dry, be installed on the substrate turntable 2;
(3), vacuumize, make sputtering chamber 1 vacuum degree reach 4 * 10 by venting channels 7
-4Pa;
(4), 99.999% argon gas is introduced sputtering chambers 1 by charge valve 6, its partial pressure of ar gas value is 0.5pa;
(5), respectively tantalum (Ta), ferronickel (NiFe), copper (Cu), cobalt (Co) target are carried out pre-sputter 5min, electric current 0.2A, voltage 100V;
(6), silicon (Si) monocrystal chip is carried out reverse sputtering 7min, electric current 15A;
(7), the target power supply of opening on the first target platform 401 501 begins sputtering sedimentation tantalums (Ta) layer 301,2.5 dust/seconds of its deposition rate, electric current 0.14A, voltage 300V, close target power supply 501 after sputtering sedimentation is finished, adjust substrate turntable 2 substrate 3 is gone to the second target platform 402;
Open target power supply 502 beginning sputtering sedimentation ferronickel (NiFe) layers 302 on the second target platform 402,3.5 dust/seconds of its deposition rate, electric current 0.2A, voltage 286V, close target power supply 502 after sputtering sedimentation is finished, adjust substrate turntable 2 substrate 3 is gone to the 3rd target platform 403;
Open target power supply 503 beginning sputtering sedimentation copper (Cu) layer 303 on the 3rd target platform 403,2.6 dust/seconds of its deposition rate, electric current 0.05A, voltage 270V close target power supply 503 after sputtering sedimentation is finished, and adjustment substrate turntable 2 goes to the 4th target platform 404 with substrate 3;
Open target power supply 504 beginning sputtering sedimentation cobalts (Co) layer 304 on the 4th target platform 404,5 dust/seconds of its deposition rate, electric current 0.2A, voltage 270V close target power supply 504 after sputtering sedimentation is finished;
(8), sputtering sedimentation finishes, and takes out silicon (Si) monocrystal chip that sputter has nano-multilayer film.
The above-mentioned nano electromagnetic resistance film for preparing is tested through the magnetic resistance tester, and its magnetoelectricity resistance 102.8% sees also as shown in Figure 3.
Example 2: adopt magnetically controlled sputter method to prepare tantalum (Ta) layer 1.5nm, ferronickel (NiFe) layer 2.8nm, copper (Cu) layer 2.3nm, cobalt (Co) layer 2nm nano electromagnetic resistance film on (111) orientation silicon (Si) monocrystal chip having.Film forming apparatus is chosen the JCK500 equipment that Beijing instrument plant produces, and the vertical view of equipment sees also shown in Figure 2.
(1), each target is installed on target platform separately
Tantalum (Ta) target: with diameter is that tantalum (Ta) target of 60mm, thick 3mm is installed on the first target platform, the 401 radio frequency targets;
Ferronickel (NiFe) target: with diameter is that ferronickel (NiFe) target of 60mm, thick 3mm is installed on the second target platform, the 402 electromagnetism targets;
Copper (Cu) target: with diameter is that copper (Cu) target of 50mm, thick 3mm is installed on the 3rd target platform 403 permanent magnetism targets;
Cobalt (Co) target: with diameter is that cobalt (Co) target of 60mm, thick 3mm is installed on the 4th target platform 404 electromagnetism targets;
(2), with silicon (Si) monocrystal chip 3 of 6 * 16mm clean, oven dry, be installed on the substrate turntable 2;
(3), vacuumize, make sputtering chamber 1 vacuum degree reach 4 * 10 by venting channels 7
-4Pa;
(4), 99.999% argon gas is introduced sputtering chambers 1 by charge valve 6, its partial pressure of ar gas value is 0.5Pa;
(5), respectively tantalum (Ta), ferronickel (NiFe), copper (Cu), cobalt (Co) target are carried out pre-sputter 5min, electric current 0.2A, voltage 100V;
(6), silicon (Si) monocrystal chip is carried out reverse sputtering 7min, electric current 15A;
(7), the target power supply of opening on the first target platform 401 501 begins sputtering sedimentation tantalums (Ta) layer 301,2.5 dust/seconds of its deposition rate, electric current 0.14A, voltage 300V, close target power supply 501 after sputtering sedimentation is finished, adjust substrate turntable 2 substrate 3 is gone to the second target platform 402;
Open target power supply 502 beginning sputtering sedimentation ferronickels (NiFe) layer 302 on the second target platform 402,2 dust/seconds of its deposition rate, electric current 0.1A, voltage 276V close target power supply 502 after sputtering sedimentation is finished, and adjustment substrate turntable 2 goes to the 3rd target platform 403 with substrate 3;
Open target power supply 503 beginning sputtering sedimentation copper (Cu) layer 303 on the 3rd target platform 403,2.6 dust/seconds of its deposition rate, electric current 0.05A, voltage 270V close target power supply 503 after sputtering sedimentation is finished, and adjustment substrate turntable 2 goes to the 4th target platform 404 with substrate 3;
Open target power supply 504 beginning sputtering sedimentation cobalts (Co) layer 304 on the 4th target platform 404,5 dust/seconds of its deposition rate, electric current 0.2A, voltage 270V close target power supply 504 after sputtering sedimentation is finished, and adjustment substrate turntable 2 goes to the first target platform 401 with substrate 3;
Open target power supply 501 beginning sputtering sedimentation tantalums (Ta) layer 301 on the first target platform 401,2.5 dust/seconds of its deposition rate, electric current 0.14A, voltage 300V close target power supply 501 after sputtering sedimentation is finished;
(8), sputtering sedimentation finishes, and takes out silicon (Si) monocrystal chip that sputter has nano-multilayer film.
The above-mentioned nano electromagnetic resistance film for preparing is tested through the magnetic resistance tester, and its magnetoelectricity resistance 42.34% sees also as shown in Figure 4.
Preparation process the choosing of platform that hit, according to the material category decision of target.Can choose radio frequency target platform as tantalum (Ta) target, and cannot choose permanent magnetism target platform, be difficult for related process parameter in stable regulation deposition of tantalum (Ta) thin-film process because of adopting permanent magnetism target platform.
Claims (6)
1, a kind of high giant magnetoresistance effect nano-multilayer film, it is the high giant magnetoresistance effect multi-layer film material of sputter on the silicon single crystal surface, it is characterized in that: layers of material is tantalum, ferronickel, copper and cobalt in the described nano-multilayer film, and described silicon single crystal has (111) orientation, and mixes.
2, high giant magnetoresistance effect nano-multilayer film according to claim 1 is characterized in that: tantalum, ferronickel, copper and cobalt sputtering sedimentation thickness are tantalum 1～4nm, ferronickel 1～4nm, copper 1～3nm, cobalt 1～4nm.
3, high giant magnetoresistance effect nano-multilayer film according to claim 1, it is characterized in that: its giant magnetoresistance value is up to 100%.
4, high giant magnetoresistance effect nano-multilayer film according to claim 1 is characterized in that: can be used to make magnetic reading head or location guide device in Magnetic Sensor or the magnetic memory.
5, a kind of method that adopts sputtering method to prepare high giant magnetoresistance effect nano-multilayer film on silicon single crystal substrate is characterized in that comprising the following steps:
(1), tantalum, ferronickel, copper, cobalt target are installed on target platform separately;
(2), with silicon single crystal substrate clean, oven dry, be installed on the substrate turntable;
(3), vacuumize, make sputtering chamber vacuum degree reach～3 * 10
-4Pa;
(4), high-purity argon gas is introduced sputtering chamber, reach required partial pressure of ar gas value 0.5～1.5Pa;
(5), each target is carried out pre-sputter 1～5min, electric current 0.1～0.3A, voltage 30～300V;
(6), silicon single crystal substrate is carried out reverse sputtering 5～10min, electric current 5～15A;
(7), successively open the target power supply of required separately sputtering sedimentation target, adjust the substrate turntable, and carry out the sputtering sedimentation target in proper order, its each layer sedimentary condition by tantalum, ferronickel, copper, cobalt:
Tantalum layer: electric current 0.1～0.3A, voltage 300～400V;
Nifesphere: electric current 0.1～0.5A, voltage 150～350V;
Copper layer: electric current 0.01～0.2A, voltage 200～350V;
Cobalt layer: electric current 0.1～1A, voltage 200～350V;
(8), sputtering sedimentation finishes, and takes out the silicon single crystal substrate that sputter has nano-multilayer film.
6, the method for the high giant magnetoresistance effect nano-multilayer film of preparation according to claim 5 is characterized in that: described target platform can be radio frequency target platform or electromagnetism target platform or permanent magnetism target platform.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379892C (en) * | 2005-05-18 | 2008-04-09 | 北京科技大学 | Optical thin-membrane production of dispersion oxide from copper-golden nanometer particle |
| CN111607773A (en) * | 2020-07-02 | 2020-09-01 | 苏州锐世讯光学科技有限公司 | Vacuum sputtering coating and process thereof |
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2004
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379892C (en) * | 2005-05-18 | 2008-04-09 | 北京科技大学 | Optical thin-membrane production of dispersion oxide from copper-golden nanometer particle |
| CN111607773A (en) * | 2020-07-02 | 2020-09-01 | 苏州锐世讯光学科技有限公司 | Vacuum sputtering coating and process thereof |
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