CN1248325C - Tunnel effect magneto-resistance device and preparing method - Google Patents
Tunnel effect magneto-resistance device and preparing method Download PDFInfo
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Abstract
The present invention relates to a tunnel effect magneto-resistance device and a preparing method thereof, which comprises a substrate and an antiferromagnetic pinning layer of perovskite type manganese-oxygen compound, wherein the substrate is provided with a bottom electrode layer, a barrier layer and a top electrode layer, the barrier layer is positioned above the bottom electrode layer and under the top electrode layer, the antiferromagnetic pinning layer of perovskite type manganese-oxygen compound is positioned above the substrate and under the bottom electrode layer, the bottom electrode layer is in a bar shape, both ends of the bottom electrode layer are lead-out ends of leading wires, the square barrier layer and the top electrode layer are arranged above the bottom electrode layer, the top part of the top electrode layer is the lead-out end of the leading wires, the periphery of the barrier layer and the top electrode layer is an SiO#-[2] isolating layer, and one or two conducting wires are respectively lead out from the lead-out ends of the leading wires of the bottom electrode layer and the top electrode. Electric currents pass through the insulating barrier layer to flow from one electrode layer to another electrode layer and appear the magnetoresistance effect by the tunnel effect. The resistance changing rate of the tunnel junction in the magnetic field range of 600 Oe is 28%. The response characteristic and the stability of the device to the external magnetic field are obviously improved by the introduction of the pinning layer.
Description
Technical field
The invention belongs to Magnetic Sensor and memory, particularly relate to a kind of tunnel effect magneto-resistance device and preparation method.
Background technology
Magneto-resistance effect has crucial application prospect at aspects such as magnetic recording and storages, and people have produced keen interest to the research in this field in recent years.Divide from generation mechanism, the magneto-resistor effect can be divided into a variety of, but what come into the picture on using mainly comprises giant magnetoresistance (being designated hereinafter simply as GMR) in the metallized multilayer film, based on the Spin Valve of metal and the tunnel magneto resistance (being designated hereinafter simply as TMR) in the metal-insulator-metal type knot.In the application as magnetic sensor and memory, the main purpose of research is to improve the magnetic field sensitivity of device, and promptly for a certain size magnetic signal, magneto-resistance device should show big as far as possible resistance change.
In tunnel junction, when on perpendicular to the direction of film surface in addition during voltage, electronics will pass the barrier layer of insulation by means of tunnel effect, flow into the junction electrode of opposite side from a junction electrode, form tunnel current.If junction electrode is made of the magnetic metal with spin polarization, then the size of tunnel current is subjected to the influence of both sides junction electrode spin orientation each other, shows the tunneling magnetoresistance relevant with spin state.Under the magnetic the action of a magnetic field, when the spin of two junction electrodes all is orientated outer magnetic field direction, just form the two parallel-oriented spin state outside, junction resistance is in low resistance state; From above-mentioned saturation condition, reducing external magnetic field to external magnetic field gradually is 0, opposing magnetic field and increase its numerical value gradually in addition then, in above-mentioned reverse magnetization process, if the coercive force of an electrode is less than another junction electrode, then the former spin will be overturn under less external magnetic field, form the attitude of spin antiparallel orientations between two electrodes, thereby make junction resistance be in high-impedance state.Therefore, the tunneling magnetoresistance of MTJ requires two essential conditions: on intrinsic characteristic, require two junction electrodes all to be made of the material with spin polarization; Report outside on the characteristic, require two junction electrode coercive forces to vary in size.
For for the magnetic device of TMR, the limiting value of magnetic field sensitivity depends on the spin polarizability of upper/lower electrode layer in the tunnel junction.The known material with spin polarization characteristic comprises the perovskite type manganese and oxygen compound of Fe, Co, Ni, permalloy, CrO2, semi-Hassler alloy (as NiMnSb), feeromagnetic metal.Because the spin polarizability of perovskite type manganese and oxygen compound may reach maximum 100%, change thereby may under the magnetic signal effect, produce peaked junction resistance, thereby be the electrode layer material of tunnel effect magneto-resistor first-selection.
At U.S. Pat 5792569 (open day be on August 11st, 1998) and the document (X.W.Li that delivers, Y.Lu, G.Q.Gong, G.Xiao, A.Gupta, P.Lecoeur, and J.Z.Sun, J.Appl.Phys.81,5509 (1997) .) in a kind of tunnel effect magneto-resistor of three-decker is disclosed, wherein be two electrode layers, be barrier layer with STO with ferromagnetic perovskite type manganese oxide.Therefore adopted identical magnetic material for two electrode layers, the coercive force difference that is caused by intrinsic magnetic properties between two electrode layers is very little.In above-mentioned technology, two electrode layers are designed to different shape and size, utilize shape anisotropy to regulate the coercive force of two electrode layers, still exist difficulty but in tunnel junction, will obtain desirable spin state.The major defect of this device is that junction resistance shows complicated variation under magnetic field, thereby can not predict that junction resistance is in high-impedance state or low resistance state under certain magnetic signal effect.And the poor stability of this device, after the magnetic signal effect, junction resistance can not be got back to initial value.Because that this device is difficult to be operated in is stable, state repeatably, has therefore limited its practicality.
Summary of the invention
The objective of the invention is at above-mentioned prior art in the shortcoming aspect the coercive force of control electrode layer, in order to improve the magnetic responsiveness characteristic and the stability of device, make device be preset operating state, and can be repeated to use, thereby provide a kind of tunnel effect magneto-resistance device and preparation method thereof.
The object of the present invention is achieved like this:
Tunnel effect magneto-resistance device provided by the invention, comprise a substrate, and the pinning layer that on substrate, begins to be provided with in order from substrate, bottom electrode layer, barrier layer and top electrode layer, described bottom electrode layer is strip, two ends are lead-in wire exits, the top of described top electrode layer is the lead-in wire exit, around barrier layer and top electrode layer is dielectric isolation layer, it is characterized in that: described pinning layer is anti-ferromagnetic perovskite type manganese and oxygen compound, described bottom electrode layer is ferromagnetic perovskite type manganese and oxygen compound, respectively draws a conductive lead wire or respectively draws two conductive lead wires from the lead-in wire exit of bottom electrode layer and top electrode layer.
Described tunnel effect magneto-resistance device also comprises: conductive lead wire directly is fixed on respectively on the lead-in wire exit of top electrode layer and bottom electrode layer.
Described tunnel effect magneto-resistance device, also comprise: the contact electrode that precious metal material is arranged on the lead-in wire exit of bottom electrode layer, the bar shaped contact electrode of precious metal materials such as one gold, silver is arranged on the lead-in wire exit of top electrode layer, and conductive lead wire directly is fixed on the contact electrode respectively.
Described substrate comprises SrTiO
3(hereinafter to be referred as STO), MgO, Al
2O
3With the Si sheet.
The pinning layer thickness of described anti-ferromagnetic perovskite type manganese and oxygen compound is 30～80nm.
Described bottom electrode layer is ferromagnetic perovskite type manganese and oxygen compound, and this layer thickness is 20～100nm.
Described top electrode layer is ferromagnetic perovskite type manganese and oxygen compound, and this layer thickness is 20～100nm.
Described barrier layer is that a thickness is the perofskite type oxide layer of 1～8nm.
According to tunnel effect magneto-resistance device of the present invention, the resistance value between two electrode layers also is that the junction resistance of tunnel junction produces regular variation under the action of a magnetic field.Thereby make the size of the size reflection magnetic signal of junction resistance.According to the method that detects junction resistance, tunnel effect magneto-resistance device of the present invention can be made four-terminal device or two terminal device.On bottom electrode layer and top electrode layer, respectively draw two conductive lead wires, promptly form four-terminal device.During one group of lead-in wire of the electric current of known dimensions (for example electric current of supplying with by constant-current source) flow through hearth electrode and top electrode, detect the voltage signal on another group lead-in wire, just obtain the value of junction resistance.On bottom electrode layer and top electrode layer, respectively draw a conductive lead wire, promptly form two terminal device.The voltage of known dimensions (for example voltage of being supplied with by constant pressure source) is applied on the lead-in wire of two electrode layers, measures the power supply signal of the lead-in wire of flowing through, and also can obtain the value of junction resistance.
The invention provides a kind of method for preparing tunnel effect magneto-resistance device, at SrTiO
3, MgO, Al
2O
3Or adopt the pulsed laser deposition method to deposit the multilayer film of the top electrode layer of the barrier layer of bottom electrode layer, perofskite type oxide of the pinning layer that comprises anti-ferromagnetic perovskite type manganese and oxygen compound, ferromagnetic perovskite type manganese and oxygen compound and ferromagnetic perovskite type manganese and oxygen compound in order on the Si sheet substrate, it is characterized in that: may further comprise the steps:
1) adopt photoresist spinner to cover one deck photoresist film on multilayer film, the mask with a substrate of glass blocks then, exposes under exposure machine.After NaOH solution develops, promptly make figure and be used as the identical photoresist mask of glass-based mask that blocks;
2) multilayer film that is coated with the photoresist mask on the surface is placed the vacuum cavity of ion etching equipment, carry out ion etching, to the control of etching depth to carve trilamellar membrane on the pinning layer as standard, after etching, obtain with as the anti-phase component graphics of glass-based mask that blocks;
3) multilayer film after the etching is placed magnetic control sputtering vacuum coating equipment, adopt pure quartzy target, at radio frequency sputtering condition deposit SiO
2Layer.In being immersed in acetone, remove the SiO on photoresist and the photoresist then
2Layer, and carry out ultrasonic cleaning;
4) adopt another piece glass-based mask, repeat above-mentioned preparation photoresist mask, ion etching, deposition SiO
2Layer and each step of ultrasonic cleaning.Wherein to the control of the ion etching degree of depth with the two membranes on the electrode layer of revealing the exact details quarter as standard;
5) the glass-based mask pattern of above-mentioned Twi-lithography process using is different and interlaced, and therefore the intersection region of twice ion etching becomes the interface, tunnel.The bottom electrode layer under the top electrode layer is exposed in ion etching, and is etched to the shape of wire bond pad areas.
6) to form good electrical contact in order making between lead-in wire and the electrode layer, can before drawing lead, on electrode layer, to deposit one deck noble metal.A kind of method is: deposition one deck noble metal on multilayer film, adopt a glass-based mask, and prepare photoresist thereon and cover, be dipped in then in the liquor kalii iodide of iodine and wet quarter, layer of precious metal is removed by partial etching, thereby makes contact electrode.Another kind method is: adopt a glass-based mask, preparation one deck photoresist mask deposits one deck noble metal thereon on multilayer film, be dipped in the acetone then, when removing photoresist, also removed the layer of precious metal on the photoresist, remaining part layer of precious metal forms contact electrode.On contact electrode, draw conductive lead wire.
Advantage of the present invention, the tunnel effect magneto-resistance device of the present invention preparation exists exchange-coupling interaction between electrode layer and the adjacent pinning layer, and the rotation of its magnetic moment is the magnetic moment institute pinning of pinning layer, and the rotation of the magnetic moment of another electrode layer is not tied, and becomes free layer.Therefore improved the coercive force of pinning electrode layer, the coercive force that makes the pinning electrode layer is greater than free electrode layer, thereby the spin state of the tunnel junction element that improves reaches magnetic responsiveness characteristic and the stability of improving device, make device can be preset operating state, and can be repeated to use.Preparation method of the present invention is simple, particularly makes the method practicality of electrode, and is suitable for industrial production.
Description of drawings
Fig. 1. the structural representation of magnetic tunnel junction device;
Among the figure: 1. pinning layer 2. bottom electrode layers 3. barrier layers 4. top electrode layer
5 ~ 8.Ag electrode, 9. substrates
Fig. 2. the surface topography of multilayer in preparation process is the situation of depositing noble metal layer from the teeth outwards not also shown in the figure;
Fig. 3. the electric current-bias voltage of magnetic tunnel junction device (I-V) curve and differential conductance-bias voltage (dI/dV-V) curve;
Fig. 4. the junction resistance of magnetic tunnel junction device is with the variation in magnetic field.
The present invention must be in order to down equipment and material:
Equipment requirements:
-ultrasonic cleaning instrument (index has not a particular requirement);
-magnetic control sputtering vacuum coating equipment: ultimate vacuum is 5.0 * 10
-4Pa, 1000 ℃ of chip bench maximum heating temperatures, target base spacing 4.0～4.5cm;
The supporting vacuum pump unit of-magnetic control sputtering vacuum coating equipment:
First order vacuum pump: adopt mechanical pump, the speed of exhaust is 8L/s, and limiting pressure is 6 * 10
-2Pa;
Second level vacuum pump: adopt molecular pump, the speed of exhaust is 600L/s, and limiting pressure is 1 * 10
-8Pa;
The supporting temperature controller of-magnetron sputtering vacuum plating Mo equipment: the 818 type single loop process adjusters that adopt Continental Europe company to produce;
-ion etching equipment: adopt the LKJ-1C-150 type ion etching instrument of 23 of China Aerospace parent companys, limiting pressure is 5.0 * 10
-4Pa
The supporting vacuum pump unit of-ion etching equipment:
First order vacuum pump: adopt mechanical pump, the speed of exhaust is 8L/s, and limiting pressure is 6 * 10
-2Pa; Second level vacuum pump: adopt molecular pump, the speed of exhaust is 600L/s, and limiting pressure is 1 * 10
-8Pa.
-sol evenning machine (index has not a particular requirement);
The exposure machine of-employing ultraviolet light source.
Material requirements: analyze pure acetone, 12 KI solution is at the epitaxially grown La of STO substrate
0.33Ca
0.67MnO
3-La
0.67.Ca
0.33MnO
3-STO-La
0.67Ca
0.33MnO
3Multilayer film.
Detection means:
-adopt Dektak IIA type step calibrator to measure etching depth;
The magnetic hysteresis loop of the MPMS-5 type superconductive quantum interference magnetometer survey multilayer film that-employing U.S. QUANTUM company produces;
-adopt the test macro that designs voluntarily and assemble to measure the I-V and the dI/dV-V characteristic of tunnel junction, and measure the magnetic responsiveness characteristic of tunnel junction in conjunction with the field system of superconducting quantum magnetometer.
Preparation process:
1. at first get a SrTiO
3, MgO, Al
2O
3Or the Si sheet, adopt grow the in proper order bottom electrode layer of the pinning layer of antiferromagnetism perovskite type manganese and oxygen compound, ferromagnetic perovskite type manganese and oxygen compound, the barrier layer of perofskite type oxide and the top electrode layer of ferromagnetic perovskite type manganese and oxygen compound of conventional sputtering method to make the multilayer diaphragm thereon;
2. preparation photoresist mask: preparation glass-based mask earlier, adopt the good photoresist mask patterns of Computer Design, through electron beam exposure with graphic making on the hard mask of chromium oxide as light non-transmittable layers.Can formally begin photoetching process after preparing the glass-based mask.Dripping photoresist on the multilayer film sample, be placed on that the rotating speed with 4000～8000 rev/mins gets rid of into glued membrane on the whirl coating platform, then 80 ℃ of bakings 10 minutes.Exposure mask is close on the sample glued membrane face, and exposure is about 40～120 seconds under ultra-violet lamp., as developer the part that the sample glued membrane has exposed is removed with NaOH solution, promptly formed the photoresist mask that has figure, the degree of development can observe under red light and control.
3. ion etching: the multilayer film sample for preparing more than inciting somebody to action is put into the vacuum chamber of ion etching instrument, and vacuum chamber is vacuumized, and vacuum reaches 1.1 * 10 at the bottom of the back of the body in vacuum chamber
-3Pa; Charge into high-purity argon gas, the argon pressure that keeps flowing is 1.5～4.0 * 10
-2Pa; With sample stage 10～20 degree that tilt, and specimen rotating holder and sample stage cooled off, etching begun then.The ion energy that adopts is 450～550eV, and beam current density is 35～45mA/cm2.Control deposition by adjusting ion energy, beam current density, the etching rate of STO is 2～3.5nm/ minute under typical condition, and the etching rate of manganese and oxygen compound is 4.5～6nm/ minute.The control etch period is to carve La fully
0.33Ca
0.67MnO
3La on the layer
0.33Ca
0.67MnO
3-La
0.67Ca
0.33MnO
3-STO-La
0.67Ca
0.33MnO
3Be total to three-layer thin-film;
4. deposit SiO
2Insulating barrier: the multilayer film sample for preparing more than inciting somebody to action is put into the coating chamber of magnetron sputtering apparatus.Coating chamber is vacuumized, and vacuum reaches 4.0 * 10 at the bottom of the back of the body of coating chamber
-3Pa; Charge into high-purity argon with certain throughput to coating chamber, aeration quantity is regulated by the ultra high vacuum angle valve, and rate of air sucked in required is regulated by slide valve, by the balance of the two argon of coating chamber is pressed to maintain 10～70Pa; Adopt magnetron sputtering on sample, to deposit the SiO of about 100nm thickness then
2Film; The parameter area that magnetron sputtering adopts is: heater current is 5.5～6.5A, and it is 50～70V that plate is pressed, and sputtering power is 80～120W.Adjust deposition by regulating sputtering power, SiO under typical condition
2Deposition 1.2～2.0nm/ minute.Multilayer film is placed the glass container that fills acetone, and glass container is placed in the ultrasonic cleaning instrument, multilayer film is carried out 10 minutes ultrasonic cleaning, remove the SiO on photoresist and the photoresist
2Layer;
5. adopt the technology identical, and adopt another piece glass-based mask, preparation photoresist mask on multi-layer film surface with step 2;
6. adopt the technology identical with step 3, multilayer film is carried out ion etching, the degree of depth of control ion etching makes it to carve fully La
0.33Ca
0.67MnO
3La on the layer
0.67Ca
0.33MnO
3-STO-La
0.67Ca
0.33MnO
3Be total to double-layer films;
7. adopt the technology identical, deposition SiO with step 4
2Layer, and carry out ultrasonic cleaning;
8. employing magnetron sputtering apparatus, and under the direct current sputtering pattern, deposition one deck Ag on multi-layer film surface;
9. adopt the technology identical, and adopt a glass-based mask on multi-layer film surface, to prepare the photoresist mask with step 2;
10. multilayer film is placed among the liquor kalii iodide of iodine, through chemical corrosion in about 10 minutes, be not removed by photoresist masking film place in the Ag layer, residual A g layer forms contact electrode;
11. with the indium is scolder, conductive lead wire is welded on the bottom electrode layer of tunnel junction.
After finishing a kind of preparation process 1 ~ 6 of embodiment, further preparation process is as follows:
7a. adopt the technology identical, and adopt a glass-based mask on multi-layer film surface, to prepare the photoresist mask with step 2;
8a. the employing magnetron sputtering apparatus, and under the direct current sputtering pattern, deposition one deck Ag on multi-layer film surface;
9a. be dipped in the acetone, when removing photoresist, also removed the layer of precious metal on the photoresist, remaining part layer of precious metal forms contact electrode;
10a. with the indium is scolder, conductive lead wire is welded on the bottom electrode layer and top electrode layer of tunnel junction.
Press the prepared tunnel effect magneto-resistor of each step in embodiment 1 or 2 as shown in Figure 1.Multilayer film is at SrTiO
3, MgO, Al
2O
3Or the Si sheet is as epitaxial growth on the substrate 9, comprises that thickness is 30 or the La of 80nm
0.33Ca
0.67MnO
3Pinning layer 1, thickness are 20 or the La of 100nm
0.67Ca
0.33MnO
3Bottom electrode layer 2, thickness be 1 or barrier layer 3, the thickness of 8nm be 20 or the La of 80nm
0.67Ca
0.33MnO
3Top electrode layer 4.Barrier layer 3 be positioned on the bottom electrode layer 2 and top electrode layer 4 under; The anti-ferromagnetic perovskite type manganese and oxygen compound that is positioned on the substrate 9 is a pinning layer 1, and this pinning layer 1 is positioned under the bottom electrode layer 2; Bottom electrode layer is strip, and two ends are lead-in wire exits; Be barrier layer 3 and the top electrode layer 4 that is the square shape on the bottom electrode layer 2, the top of top electrode layer is the lead-in wire exit; Around barrier layer 3 and top electrode layer 4 is SiO
2Separator; Respectively draw the conductive lead wire 5-8 or respectively draw two conductive lead wires from the lead-in wire exit of bottom electrode layer and top electrode layer 4.Behind twice etching, barrier layer 3 and top electrode layer 4 form and are of a size of 2 * 10um
2Small rectangular block, become the service area of tunnel junction.Being Ag contact electrode 5 and 6 (two electrodes link to each other) on top electrode layer 4, is Ag contact electrode 7 and 8 on bottom electrode layer 2.And current source is connected between contact electrode 5 and 7, measure the magnitude of voltage between the contact electrode 6 and 8, just can detect the numerical value of junction resistance.
The tunnel effect magneto-resistance device of this embodiment preparation is identical with the structure of embodiment 1, just each layer ground thickness difference.Multilayer film epitaxial growth on STO substrate 9 comprises that thickness is the La of 60nm
0.33Ca
0.67MnO
3Pinning layer 1, thickness are the La of 60nm
0.67Ca
0.33MnO
3 Bottom electrode layer 2, thickness are that barrier layer 3, the thickness of 2nm is the La of 35nm
0.67Ca
0.33MnO
3Top electrode layer 4.Behind twice etching, potential barrier layer by layer 3 and top electrode layer 4 form and be of a size of 5 * 5um
2Small rectangular block, become the service area of tunnel junction.Being Ag contact electrode 5 and 6 (two electrodes link to each other) on layer top electrode layer 4, is Ag contact electrode 7 and 8 on bottom electrode layer 2.On contact electrode 5-8, weld conductive lead wire respectively, and current source is connected between contact electrode 5 and 7, measure the magnitude of voltage between the contact electrode 6 and 8, just can detect the numerical value of junction resistance.
Press the prepared tunnel effect magneto-resistor of each step in embodiment 1 or 2, multilayer film is etched to shape as shown in Figure 1.Being Ag contact electrode 5 and 6 (two electrodes link to each other) on top electrode layer 4, is Ag contact electrode 7 and 8 on bottom electrode layer 2.On contact electrode 5 or 6, and respectively weld a conductive lead wire on contact electrode 7 or 8, and voltage source is connected between two conductive lead wires, the current value in the measuring circuit just can detect the numerical value of junction resistance.The characteristic of utilizing junction resistance to change under magnetic field can detect magnetic signal.
With reference to figure 2, adopt atomic force microscope to check the surface topography of multilayer film in the course of processing.1～6 step has been finished in preparation to the tunnel effect magneto-resistor, and the tunnel junction working region (being the area of top electrode 11 and barrier layer) that twice ion etching forms is of a size of 2 * 10um
2Can see the surface 11 of top electrode layer 4 in the drawings, be SiO on every side
2Separator 10 (being not shown among Fig. 1).
With reference to figure 3, adopt the four-end method of standard to measure above-mentioned tunnel junction in transport property perpendicular to the face direction.Nonlinear I-V curve reflects the feature of electron tunneling effect, and the dI/dV-V curve approximation is a parabolic shape, can adopt the Brinkman formula of describing electron tunneling effect to carry out match.Obvious variation takes place in dI/dV-V under the action of a magnetic field, and junction resistance reduces with the rising in magnetic field, shows the raising with magnetic order, the spin polarization characteristic that tunnel current increases.
With reference to figure 4, adopt the four-end method of standard to measure of the variation of above-mentioned tunnel junction junction resistance with magnetic field.When measuring beginning, the magnetic moment of top, hearth electrode is orientated the negative fluxfield direction simultaneously because the field is cold, is in low resistive state.Adding under the positive flux field effect, along with the increase in magnetic field, the top electrode magnetic moment begins turning freely, and the magnetic moment of hearth electrode is because the pinning of pinning layer still is in inceptive direction.When reaching certain value, external magnetic field forms the antiparallel orientation of magnetic moment between top, hearth electrode, junction resistance maximum; Along with the further increase in magnetic field, the magnetic moment of hearth electrode also begins turning; Under saturation condition, magnetic moment orientation is parallel fully relatively, the junction resistance minimum.Therefore, in the positive flux field magnetization process, peak value appears in the position at+400Oe on the tunnel magneto resistance curve.Same process, the peak value of junction resistance appears in the position at-400Oe in adding the measuring process of negative fluxfield.The resistance change rate of tying at the magnetic field range inner tunnel of 600Oe reaches 28%.
Observed two peak structure shows that the method that adopts antiferromagnetic pinning has caused the magnetic asymmetry of top, hearth electrode on the magneto-resistor curve.Although the composition of two electrodes, structure and thickness do not have difference, than top electrode is hard freely, promptly the former coercive force is greater than the latter on magnetic for hearth electrode.And junction resistance comes from the tunnel effect of spin polarization, and the size of junction resistance is decided by the relative spin orientation of top hearth electrode.Tunnel junction is regular to the response in magnetic field performance, and measurable under certain magnetic signal effect the residing Resistance states of tunnel junction.Through the action of a magnetic field of one-period, the size of junction resistance still can be got back to initial value.
Claims (11)
1. tunnel effect magneto-resistance device, comprise substrate, and the pinning layer that on substrate, begins to be provided with in order, bottom electrode layer, barrier layer and top electrode layer from substrate, described bottom electrode layer is strip, two ends are lead-in wire exits, the top of described top electrode layer is the lead-in wire exit, is SiO around barrier layer and top electrode layer
2Dielectric isolation layer, it is characterized in that: described pinning layer is anti-ferromagnetic perovskite type manganese and oxygen compound, described bottom electrode layer is ferromagnetic perovskite type manganese and oxygen compound, respectively draws a conductive lead wire or respectively draws two conductive lead wires from the lead-in wire exit of bottom electrode layer and top electrode layer; Described barrier layer and top electrode layer are the square shape.
2. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: also comprise: conductive lead wire directly is fixed on respectively on the lead-in wire exit of top electrode layer and bottom electrode layer.
3. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: also comprise: the contact electrode that precious metal material is arranged on the lead-in wire exit of bottom electrode layer, the bar shaped contact electrode of precious metal material is arranged on the lead-in wire exit of top electrode layer, and conductive lead wire is connected on the contact electrode.
4. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: described substrate comprises: SrTiO
3, MgO, Al
2O
3Or Si sheet.
5. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: the thickness of described pinning layer is 30～80nm.
6. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: the thickness of described bottom electrode layer is 20～100nm.
7. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: described barrier layer is the perofskite type oxide layer of insulation, and this layer thickness is 1～8nm.
8. by the described tunnel effect magneto-resistance device of claim 1, it is characterized in that: described top electrode layer is ferromagnetic perovskite type manganese and oxygen compound layer, and this layer thickness is 20～100nm.
9. method for preparing tunnel effect magneto-resistance device is at SrTiO
3, MgO, Al
2O
3Or adopt the pulsed laser deposition method to deposit the multilayer film of the top electrode layer of the barrier layer of bottom electrode layer, perofskite type oxide of the pinning layer that comprises anti-ferromagnetic perovskite type manganese and oxygen compound, ferromagnetic perovskite type manganese and oxygen compound and ferromagnetic perovskite type manganese and oxygen compound in order on the Si sheet substrate, it is characterized in that: may further comprise the steps:
1) adopts conventional photoetching technique, the photoresist mask of preparation reservation shape on multilayer film;
2) carry out ion etching according to a conventional method, and the control etching depth is for carving the trilamellar membrane on the saturating pinning layer;
3) method deposition SiO routinely
2Insulating barrier;
5) adopt conventional photoetching technique, the photoresist mask of another shape of preparation on multilayer film;
6) carry out ion etching, and the control etching depth is for carving two tunics on the electrode layer of revealing the exact details;
7) deposition SiO
2Insulating barrier:
8) on two electrode layers, draw conductive lead wire.
10. by the described method for preparing tunnel effect magneto-resistance device of claim 9, it is characterized in that: also comprise: adopt common process on multilayer film, to deposit one deck noble metal, adopt a glass-based mask, preparation photoresist mask on layer of precious metal, be dipped in then in the liquor kalii iodide of iodine and wet quarter, layer of precious metal is removed by partial etching, makes contact electrode.
11. by the described method for preparing tunnel effect magneto-resistance device of claim 9, it is characterized in that: also comprise: also comprise and adopt a glass-based mask, preparation one deck photoresist mask on multilayer film, deposition one deck noble metal on the photoresist mask, be dipped in then in the acetone, when removing photoresist, also removed the layer of precious metal on the photoresist, remaining part layer of precious metal forms contact electrode, draws conductive lead wire on contact electrode.
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| CN100389954C (en) * | 2005-02-28 | 2008-05-28 | 中国科学院物理研究所 | Perovskites semimetal composite multilayer membrane prepared by one ingredient and use thereof |
| CN100593214C (en) * | 2005-05-27 | 2010-03-03 | 中国科学院物理研究所 | Perovskite oxide thin-film compound device |
| CN100593122C (en) * | 2005-12-09 | 2010-03-03 | 中国科学院物理研究所 | 3-D magnetic-field sensor integrated by planes, preparing method and use |
| CN101034145B (en) * | 2006-03-10 | 2011-05-04 | 中国科学院物理研究所 | Integrated three-dimensional superconductive composite magnetic field sensor and manufacturing method and use thereof |
| CN109888088B (en) * | 2019-03-01 | 2021-05-28 | 西安交通大学 | Magnetoresistive sensor structure and manufacturing method thereof |
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2002
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