CN111607773A - Vacuum sputtering coating and process thereof - Google Patents
Vacuum sputtering coating and process thereof Download PDFInfo
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- CN111607773A CN111607773A CN202010633421.3A CN202010633421A CN111607773A CN 111607773 A CN111607773 A CN 111607773A CN 202010633421 A CN202010633421 A CN 202010633421A CN 111607773 A CN111607773 A CN 111607773A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A vacuum sputtering coating and its process, including substrate and film plating machine, there are coating targets in the film plating machine, the coating target includes: si, ITO and Li2O, the step of vacuum sputtering coating comprises the following steps: step1, detecting the vacuum degree, and starting the coating target material to coat the substrate after the vacuum degree meets the detection requirement; step2, turning on an AE power supply at the same time, connecting the output end of the power supply with a coating target material, controlling the thickness of a coating structure on a coating product by adjusting the current of the AE power supply, wherein the thicker the coating structure is, the thinner the coating structure is; and Step3, detecting the thickness of the coating structure by using a transmittance instrument, stopping adjusting the current after the thickness of the coating structure meets the requirement, and finally obtaining a coating finished product.
Description
Technical Field
The invention relates to the technical field of sputtering coating, in particular to vacuum sputtering coating and a process thereof.
Background
At present, a vacuum magnetron sputtering coating machine is special equipment for coating metal, glass and plastic surfaces, and is suitable for coating wear-resistant coatings. The vacuum magnetron sputtering film plating machine in the prior art comprises a vacuum pumping system, a vacuum chamber, a feeding hole 220 of the vacuum chamber, a workpiece rotating frame arranged in the vacuum chamber and a magnetron sputtering device arranged on a vacuum chamber body, and a metal layer with the thickness of several microns can be deposited on the surface of a workpiece by utilizing a physical vapor deposition (hereinafter referred to as PVD) technology. With the improvement of living standard, people have more and more demands on coatings with wider application and performance.
At present, a film coating product is in a multilayer film structure according to the requirements of customers, the thickness of each layer of film needs to be repeatedly adjusted to meet the requirements of the customers in the multilayer film structure, and how to simply and conveniently control the thickness of the film layer is the problem to be solved at present.
Disclosure of Invention
In view of the above, in order to solve the above-mentioned problem of how to simply and conveniently control the thickness of the film layer, the invention provides a vacuum sputtering coating and a process thereof, wherein a product to be coated is placed on a rack and enters a vacuum coating chamber for vacuum-pumping treatment, and the thickness of each film is controlled by controlling the current and the tension through an AE power supply.
A vacuum sputtering coating and its process, including substrate 4 and film plating machine, there are coating targets in the film plating machine, the coating target includes: si, ITO and Li2O, the step of vacuum sputtering coating comprises the following steps:
step1, detecting the vacuum degree, and starting the coating target material to coat the substrate 4 after the vacuum degree meets the detection requirement;
step2, turning on the AE power supply at the same time, connecting the output end of the power supply with a coating target material, and adjusting AE
The thickness of a coating structure on a coating product is controlled by the current of the power supply, the thickness of the coating structure is thicker when the current is larger, and the thickness of the coating structure is thinner when the current is smaller;
and Step3, detecting the thickness of the coating structure by using a transmittance instrument, stopping adjusting the current after the thickness of the coating structure meets the requirement, and finally obtaining a coating finished product.
Further, when the coating finished product is of a three-layer coating structure, the coating finished product sequentially comprises from outside to inside: the film structure comprises a Si layer film structure 1, an ITO layer film structure 2 and a Li2O layer film structure 3, wherein the thickness of the Si layer film structure 1 is 5nm, the thickness of the ITO layer film structure 2 is 20nm, and the thickness of the Li2O layer film structure 3 is 20 nm.
Further, when the coating finished product is a two-layer coating structure, the coating finished product sequentially comprises from outside to inside: the Si-layer film structure 1 and the Li 2O-layer film structure 3 are arranged, the thickness of the Si-layer film structure 1 is 10nm, and the thickness of the Li 2O-layer film structure 3 is 40 nm.
Further, when the finished coating is a coating structure, the finished coating is a Li2O layer film structure 3, and the thickness of the Li2O layer film structure 3 is 60 nm.
Further, the coating machine adds O2Or Ar, a gas such as O2The input amount of (2) is 130CC, and the input amount of Ar is 400 CC.
Further, the standard value of the vacuum pumping of the film coating machine is less than or equal to 1.0 x 10-3Par。
The invention has the beneficial effects that: the invention provides a vacuum sputtering coating and a process thereof, wherein a product to be coated is placed on a rack and enters a vacuum coating chamber for vacuum pumping treatment, and the thickness of each layer of film is controlled by controlling the current and the tension through an AE power supply.
Drawings
Fig. 1 is a schematic structural diagram of a finished plated product of the present invention.
Description of the main elements
| Si |
1 |
| ITO (indium tin oxide) layer film structure | 2 |
| Li2O layer film structure | 3 |
| |
4 |
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
Detailed description of the preferred embodiment 1
Fig. 1 is a schematic structural diagram of a finished plated film product of the present invention.
A vacuum sputtering coating and its process, including substrate 4 and film plating machine, there are coating targets in the film plating machine, the coating target includes: si, ITO and Li2O, the step of vacuum sputtering coating comprises the following steps:
step1 detecting vacuum degree, adding O by a film coating machine2Or Ar, a gas such as O2The input amount of (A) is 130CC, the input amount of Ar is 400CC, and the standard value of the vacuumizing of the film plating machine is less than or equal to 1.0 x 10-3Par, opening a coating target to coat the substrate 4 after the detection requirement is met;
step2, turning on an AE power supply at the same time, connecting the output end of the power supply with a coating target material, controlling the thickness of a coating structure on a coating product by adjusting the current of the AE power supply, wherein the thicker the coating structure is, the thinner the coating structure is;
and Step3, detecting the thickness of the coating structure by using a transmittance instrument, wherein when the finished coating product is of a three-layer coating structure, the finished coating product sequentially comprises the following components from outside to inside: a Si layer film structure 1, an ITO layer film structure 2 and a Li2O layer film structure 3, wherein the thickness of the Si layer film structure 1 is 5nm, the thickness of the ITO layer film structure 2 is 20nm, the thickness of the Li2O layer film structure 3 is 20nm,stopping adjusting the current after the requirement of the thickness of the coating structure is met, keeping the voltage of the Si coating target material at 0-390V for 5min, keeping the voltage of the ITO coating target material at 400V for 5min, and Li2And keeping the voltage of the O coating target material at 500V for 5min to finally obtain a coating finished product.
Detailed description of the preferred embodiment 2
A vacuum sputtering coating and its process, including substrate 4 and film plating machine, there are coating targets in the film plating machine, the coating target includes: si, ITO and Li2O, the step of vacuum sputtering coating comprises the following steps:
step1 detecting vacuum degree, adding O by a film coating machine2Or Ar, a gas such as O2The input amount of (A) is 130CC, the input amount of Ar is 400CC, and the standard value of the vacuumizing of the film plating machine is less than or equal to 1.0 x 10-3Par, opening a coating target to coat the substrate 4 after the detection requirement is met;
step2, turning on an AE power supply at the same time, connecting the output end of the power supply with a coating target material, controlling the thickness of a coating structure on a coating product by adjusting the current of the AE power supply, wherein the thicker the coating structure is, the thinner the coating structure is;
and Step3, detecting the thickness of the coating structure by using a transmittance instrument, wherein when the finished coating product is of a two-layer coating structure, the finished coating product sequentially comprises the following components from outside to inside: the thickness of the Si layer film structure 1 is 10nm, the thickness of the Li2O layer film structure 3 is 40nm, the current is stopped to be adjusted after the thickness requirement of the coating structure is met, the voltage of the Si coating target material is 0-390V and stays for 5min, the voltage of the ITO coating target material is 400V and stays for 5min, and the Li2O layer film structure 3 stays for 5min2And keeping the voltage of the O coating target material at 500V for 5min to finally obtain a coating finished product.
Detailed description of preferred embodiments 3
A vacuum sputtering coating and its process, including substrate 4 and film plating machine, there are coating targets in the film plating machine, the coating target includes: si, ITO and Li2O, the step of vacuum sputtering coating comprises the following steps:
step1 detecting vacuum degree, adding O by a film coating machine2Or Ar one of the gasesVacuum treatment is carried out, generally O2The input amount of (A) is 130CC, the input amount of Ar is 400CC, and the standard value of the vacuumizing of the film plating machine is less than or equal to 1.0 x 10-3Par, opening a coating target to coat the substrate 4 after the detection requirement is met;
step2, turning on the AE power supply at the same time, connecting the output end of the power supply with a coating target material, and adjusting AE
The thickness of a coating structure on a coating product is controlled by the current of the power supply, the thickness of the coating structure is thicker when the current is larger, and the thickness of the coating structure is thinner when the current is smaller;
step3, detecting the thickness of the coating structure by using a transmittance instrument, wherein the finished coating product is a Li2O layer film structure 3, the thickness of the Li2O layer film structure 3 is 60nm, the thickness of the Li2O layer film structure 3 is 40nm, adjusting the current is stopped after the requirement of the thickness of the coating structure is met, the voltage of the Si coating target material is 0-390V, the Si coating target material stays for 5min, the voltage of the ITO coating target material is 400V, the ITO coating target material stays for 5min, and the Li2O layer film structure 3, the Li2 392And keeping the voltage of the O coating target material at 500V for 5min to finally obtain a coating finished product.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (6)
1. A vacuum sputtering coating and its process, including substrate (4) and film plating machine, the film plating machine is equipped with the coating target, the coating target includes: si, ITO and Li2O, the step of vacuum sputtering coating comprises the following steps:
step1, detecting the vacuum degree, and starting the coating target material to coat the substrate (4) after the vacuum degree meets the detection requirement;
step2, turning on an AE power supply at the same time, connecting the output end of the power supply with a coating target material, controlling the thickness of a coating structure on a coating product by adjusting the current of the AE power supply, wherein the thicker the coating structure is, the thinner the coating structure is;
and Step3, detecting the thickness of the coating structure by using a transmittance instrument, stopping adjusting the current after the thickness of the coating structure meets the requirement, and finally obtaining a coating finished product.
2. The vacuum sputter coating and process thereof according to claim 1, characterized in that: when the coating finished product is of a three-layer coating structure, the coating finished product sequentially comprises from outside to inside: the film structure comprises a Si layer film structure (1), an ITO layer film structure (2) and a Li2O layer film structure (3), wherein the thickness of the Si layer film structure (1) is 5nm, the thickness of the ITO layer film structure (2) is 20nm, and the thickness of the Li2O layer film structure (3) is 20 nm.
3. The vacuum sputter coating and process thereof according to claim 1, characterized in that: when the coating finished product is a two-layer coating structure, the coating finished product sequentially comprises from outside to inside: the film structure comprises a Si layer film structure (1) and a Li2O layer film structure (3), wherein the thickness of the Si layer film structure (1) is 10nm, and the thickness of the Li2O layer film structure (3) is 40 nm.
4. The vacuum sputter coating and process thereof according to claim 1, characterized in that: when the finished coating is a one-layer coating structure, the finished coating is a Li 2O-layer coating structure (3), and the thickness of the Li 2O-layer coating structure (3) is 60 nm.
5. The vacuum sputter coating and process thereof according to claim 1, characterized in that: the coating machine adds O2Or Ar, a gas such as O2The input amount of (2) is 130CC, and the input amount of Ar is 400 CC.
6. The vacuum sputter coating and process thereof according to claim 1, characterized in that: the standard value of the vacuum pumping of the film coating machine is less than or equal to 1.0 x 10-3Par。
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| CN202010633421.3A CN111607773A (en) | 2020-07-02 | 2020-07-02 | Vacuum sputtering coating and process thereof |
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| CN202010633421.3A CN111607773A (en) | 2020-07-02 | 2020-07-02 | Vacuum sputtering coating and process thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975168A (en) * | 1988-04-20 | 1990-12-04 | Casio Computer Co., Ltd. | Method of forming transparent conductive film and apparatus for forming the same |
| CN1564336A (en) * | 2004-04-16 | 2005-01-12 | 北京航空航天大学 | Preparing high giant magnetic resistance effect nano multiplayer membrane on silicon-based chip by sputtering process and its prepn. method |
| CN104626679A (en) * | 2015-02-15 | 2015-05-20 | 珠海拾比佰彩图板股份有限公司 | Laminated aluminum plate and preparation method thereof |
| CN104726831A (en) * | 2013-12-19 | 2015-06-24 | 华泰(桐乡)玻璃明镜有限公司 | Method for controlling vacuum magnetron sputtering metallic film layer thickness |
| CN107299316A (en) * | 2017-06-01 | 2017-10-27 | 南京航空航天大学 | A kind of method for preparing amorphous nanocrystalline coating in Zr alloy surface |
| CN109722638A (en) * | 2019-01-29 | 2019-05-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of thin film sputtering control device and method |
-
2020
- 2020-07-02 CN CN202010633421.3A patent/CN111607773A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975168A (en) * | 1988-04-20 | 1990-12-04 | Casio Computer Co., Ltd. | Method of forming transparent conductive film and apparatus for forming the same |
| CN1564336A (en) * | 2004-04-16 | 2005-01-12 | 北京航空航天大学 | Preparing high giant magnetic resistance effect nano multiplayer membrane on silicon-based chip by sputtering process and its prepn. method |
| CN104726831A (en) * | 2013-12-19 | 2015-06-24 | 华泰(桐乡)玻璃明镜有限公司 | Method for controlling vacuum magnetron sputtering metallic film layer thickness |
| CN104626679A (en) * | 2015-02-15 | 2015-05-20 | 珠海拾比佰彩图板股份有限公司 | Laminated aluminum plate and preparation method thereof |
| CN107299316A (en) * | 2017-06-01 | 2017-10-27 | 南京航空航天大学 | A kind of method for preparing amorphous nanocrystalline coating in Zr alloy surface |
| CN109722638A (en) * | 2019-01-29 | 2019-05-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of thin film sputtering control device and method |
Non-Patent Citations (2)
| Title |
|---|
| 刘爱国: "《低温等离子体表面强化技术》", 30 September 2015, 哈尔滨工业大学出版社 * |
| 舒朝濂等: "《现代光学制造技术》", 31 August 2008, 国防工业出版社 * |
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