CN1558452A - 多引脚式发光二极管组件 - Google Patents

多引脚式发光二极管组件 Download PDF

Info

Publication number
CN1558452A
CN1558452A CNA2004100043126A CN200410004312A CN1558452A CN 1558452 A CN1558452 A CN 1558452A CN A2004100043126 A CNA2004100043126 A CN A2004100043126A CN 200410004312 A CN200410004312 A CN 200410004312A CN 1558452 A CN1558452 A CN 1558452A
Authority
CN
China
Prior art keywords
emitting diode
light
electrostatic protection
conductive pin
diode component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004100043126A
Other languages
English (en)
Inventor
林明德
林三宝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Opto Tech Corp
Original Assignee
Opto Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opto Tech Corp filed Critical Opto Tech Corp
Priority to CNA2004100043126A priority Critical patent/CN1558452A/zh
Publication of CN1558452A publication Critical patent/CN1558452A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Led Device Packages (AREA)

Abstract

本发明公开了一种发光二极管组件，特别是一种具有至少三个引脚的发光二极管组件，其主要是于一容置座内固设有一静电防护装置及至少一发光晶粒，发光晶粒以覆晶方式黏合于静电防护装置，以使发光晶粒的第一电极及第二电极分别电性连接于静电防护装置相对应的第一防护电极及第二防护电极，而容置座连设有至少一散热引脚，在其侧边设有一第一导电引脚及第二导电引脚，以使第一防护电极及第二防护电极分别电性连接于第一导电引脚及第二导电引脚，借此，不但可具有防止静电破坏功能及高散热效率，更可以提高发光二极管组件的发光亮度。

Description

多引脚式发光二极管组件
技术领域
本发明涉及一种发光二极管组件，特别是涉及一种具有至少三个引脚的发光二极管组件。
背景技术
发光二极管因为具有体积小、重量轻、低耗电、寿命长等诸多优点，因此广泛使用于计算机外设、通讯产品以及其它电子装置中。
请参阅图1，为公知插件式发光二极管组件构造示意图；如图所示，发光二极管组件10主要是在一第一导线架151的锥状部159内固定设置有一发光晶粒11，第一导线架151侧边设有一对应的第二导线架153，发光晶粒11的第一电极111及第二电极113可个别通过一第一导线131及一第二导线133而电性连接于相对应的第一导线架151及第二导线架153，而发光晶粒11、锥状部159、第一导线131、第二导线133、第一导线架151的一部份及第二导线架153的一部份则包覆于一保护层19内。
当第一导线架151及第二导线架153导入一工作电源时，发光晶粒11将可发射光源而向前方投射而出。虽然此种发光二极管组件10具有基本的发光功能，但是并不具有电压限制，因此，当产生一静电放电效应时，发光晶粒11的第一电极111及第二电极113将因两端电压过高而非常容易造成发光晶粒11的毁损。
为避免此种静电效应而造成发光晶粒11毁损的现象，业界提出一种附有静电保护功能的发光二极管，如图2所示。此种具有静电保护功能的发光二极管组件20的主要构造大致与图1所示公知构造相同，但是于第一导线架251的锥状部259顶端增设有一齐纳二极管27，并通过一第二导线233及第三导线235而分别电性连接至相对应的发光晶粒11的第二电极113及第二导线架153，而齐纳二极管27的第二电极273则直接电性连接于第一导线架251。如此，通过齐纳二极管27的作用，当发光晶粒11的第一电极111及第二电极113的电压过高时，经由齐纳二极管27的击穿作用及旁分电路作用，即可使电流由齐纳二极管27通过，进而保护发光晶粒11以避免毁损。
虽然上述发光二极管具有简易的静电防护功能，但是，为使发光二极管组件的发光量增加，发光晶粒面积越做越大或提供较大工作电流已经成为一种趋势，当发光量增大时，如何将发光时所产生的热量向外排出，以控制发光晶粒保持在适当的工作温度，已成为一项重要课题。而上述发光二极管组件由于无法适时将发光时所伴随产生的热量适时向外排出，因此容易造成发光晶粒的工作温度上升，进而导致其发光效率下降。况且，第一导线131、第一电极111及第二导线233位于光源投射的路径上，极容易造成遮光效应，相对将降低发光二极管组件20的发光亮度。
发明内容
本发明所要解决的技术问题是提供一种多引脚式发光二极管组件，解决现有技术容易造成发光晶粒的工作温度上升和容易降低发光亮度的问题。
为达到上述目的，本发明提供了一种多引脚式发光二极管组件，其特点在于，包括有：
一静电防护装置，具有一第一防护电极及一第二防护电极；
至少一发光晶粒，固设于该静电防护装置上，每一个发光晶粒的第一电极及第二电极分别电性连接于相对应的该第一防护电极及该第二防护电极；
一容置座，用以固设该发光晶粒及该静电防护装置，而其下方连接设有至少一散热引脚；
至少一第一导电引脚，电性连接于该第一防护电极；及
至少一第二导电引脚，电性连接于该第二防护电极。
上述的发光二极管组件，其特点在于，该发光晶粒采用覆晶方式黏合于该静电防护装置上。
上述的发光二极管组件，其特点在于，该静电防护装置利用锡膏、银胶、导热胶、金-硅、金-锡及其组合式的其中之一材质而固设于该容置座上。
上述的发光二极管组件，其特点在于，还设有一保护层，该保护层包覆该静电防护装置、发光晶粒、容置座、第一导电引脚的部份、第二导电引脚的部份及散热引脚的部份。
上述的发光二极管组件，其特点在于，该保护层选择为一玻璃、塑料、环氧树脂及其组合式的其中之一材质。
上述的发光二极管组件，其特点在于，该第一防护电极及第二防护电极分别通过一第一导线及一第二导线而电性连接于相对应的该第一导电引脚及第二导电引脚。
上述的发光二极管组件，其特点在于，该静电保护装置为一静电保护集成电路、萧特基二极管、齐纳二极管、电压限制器、等效二极管及其组合式的其中之一。
上述的发光二极管组件，其特点在于，该散热引脚连接设于该容置座的侧边。
上述的发光二极管组件，其特点在于，该散热引脚与该第一导电引脚及第二导电引脚的其中之一结合为一体。
本发明的技术效果在于：
本发明通过将容置座连设有至少一向外延伸的散热引脚，以使容置座内的发光晶粒所产生的工作热源适时且直接向外排出，进而控制发光组件保持在适当的工作温度下，以增加其发光效率；本发明通过散热引脚与导电引脚分别独立设置，以避免将散热功能与导电功能设置于同一引脚而导致漏电的安全性问题；本发明通过现有的制造技术，不需额外投入大量成本，即可达到大量生产的目标；本发明通过将发光晶粒以覆晶方式黏合于静电防护装置，以避免第一导线及第二导线阻挡投射光源，进而增加发光二极管组件的发光亮度；因此，本发明是一种具有高散热效率及抗静电破坏功效的发光二极管组件，不但具有防止静电破坏功能及高散热效率，还可以提高发光二极管组件的发光亮度。
下面结合附图进一步详细说明本发明的具体实施例。
附图说明
图1为公知发光二极管组件构造示意图；
图2为另一公知发光二极管组件构造示意图；
图3为本发明一较佳实施例的构造示意图；
图4为本发明另一实施例的构造示意图；
图5为图3所示实施例的电路示意图；及
图6为图5所示实施例的静电保护装置的电压对电流关系示意图。
其中，附图标记说明如下：
10   发光二极管组件     11   发光晶粒
111  第一电极           113  第二电极
131  第一导线           133  第二导线
151  第一导线架         153  第二导线架
159  锥状部             19   保护层
20   发光二极管组件     233  第二导线
235  第三导线           251  第一导线架
259  锥状部             27   齐纳二极管
271  第一电极           273  第二电极
30   发光二极管组件     31   发光晶粒
311  第一电极           313  第二电极
331  第一导线           333  第二导线
351  第一导电引脚       353  第二导电引脚
355  散热引脚           359  容置座
37   静电防护装置       371  第一防护电极
373  第二防护电极       377  齐纳二极管
379  齐纳二极管         39   保护层
40   发光二极管组件     455  散热引脚
具体实施方式
首先，请参阅图3，为本发明一较佳实施例的构造示意图；如图所示，具有高散热效率及抗静电破坏功效的发光二极管组件30，其主要构造包含有至少一静电防护装置37、至少一发光晶粒31、一第一导电引脚351、一第二导电引脚353及至少一容置座359。
发光晶粒31具有一第一电极311及一第二电极313，而静电防护装置37则至少具有一第一防护电极371及一第二防护电极373，发光晶粒31采用覆晶方式以使发光晶粒31的第一电极311及第二电极313分别电性连接于相对应的第一防护电极371及第二防护电极373。
静电防护装置37是使用银胶、锡膏、金-硅、金-锡或其它导热材料直接黏合于容置座359底部，而容置座359则向外延伸有一散热引脚355。容置座359的旁边设有第一导电引脚351及第二导电引脚353，而第一防护电极371及第二防护电极373则分别通过一第一导线331及第二导线333电性连接于相对应的第一导电引脚351及第二导电引脚353。由于发光晶粒31采用覆晶方式黏合于静电防护装置37，因此第一导线331及第二导线333不会阻挡光源投射路径，因此可增加发光组件的发光亮度。
另外，发光晶粒31、静电防护装置37、容置座359、第一导线331、第二导线333、第一导电引脚351的顶端及第二导电引脚353的顶端，其外部可设有一保护层39，例如玻璃、塑料、环氧树脂等材料，以保护内部构造，避免其与外部空气接触而造成损害。保护层39亦可做成凸透镜、凹透镜等造型，以使发光晶粒31所投射的光束得以依其实际使用目的而均匀发散或集中投射。
由于静电防护装置37采用金-硅、金-锡、锡膏、银胶或其它高热导系数的黏合材料而贴合于容置座359内侧，况且，容置座359及其延伸至保护层39外部的散热引脚355可采用铜、铝等高热导系数材料所制成，因此，发光晶粒31所产生的热源可快速经由容置座359及散热引脚355而向外界排出，进而使发光晶粒31能保持一定的工作温度，所以可增加发光效率及延长使用寿命。
由于本发明的第一导电引脚351与散热引脚355并不连接在一起，因此，将本发明发光二极管组件30插设于电路板(未显示)时，热量不会通过第一导电引脚351而传送至电路板，可避免造成电路板温度上升。另外，由于散热引脚355并不通电，因此，其本身也不会产生额外的工作高温，影响发光晶粒31的散热效果。同时，由于散热引脚355具有独立的散热功能而不具有导电功能，也可避免因漏电而造成安全性问题。当然，若电路板设计有散热装置(未显示)时，亦可以将散热引脚355连接至散热装置，以增加其散热功效。
另外，对于工作产生热量较少、温度较低的发光晶粒31，还是可以将第一导电引脚351或第二导电引脚353的其中之一直接连接于散热引脚355，而使热量通过第一导电引脚351或第二导电引脚353传送至电路板的散热装置(未显示)。
接续，请参阅图4，是本发明另一实施例的构造示意图；如图所示，发光二极管组件40的主要构造与图3实施例大致相同；不同的是，于容置座359下方延伸设置有多个散热引脚455，以加强其散热效果。虽然图标中，散热引脚455是设置于容置座359下方，但是不限定于此，当可视容置座359内的发光晶粒31的数量、发热的速度及传热方向，而将散热引脚455设计于容置座359的侧边，或者增减散热引脚455的数目，以适用于实际的产品。
最后，请连同参阅图5及图6，分别为本发明的图3所示实施例的电路示意图及其静电防护装置的电压对电流关系示意图；如图所示，静电防护装置37与发光晶粒31采用并联方式电性连接，而静电防护装置37可选择由多个齐纳二极管377、379以背对背方式所组成，因此，当供应电压Vcc大于静电防护装置37的正向电压限Vt、或小于静电防护装置37的负向电压限-Vt时，静电防护装置37便可导通以使工作电流由静电防护装置37通过，以限定发光晶粒31两端的电压，避免发光晶粒31的损坏。虽然，本实施例中以两个背对背的齐纳二极管来组成一个静电防护装置37，但实际实施时，当不限于此，而可视实际需要利用萧特基二极管、静电防护集成电路、电压限制器或其它等效二极管，并通过其串联、并联等各种组合来作为静电防护装置，以配合各种发光晶粒的驱动电压而防止其损坏。
由于此种发光二极管组件构造单纯，信赖度高，因此，可利用既有的生产设备，而不需另外投入大量成本即可制造出兼具静电防护功能及高散热效率的发光二极管组件。
综上所述，本发明是一种具有高散热效率及抗静电破坏功效的发光二极管组件，不但具有防止静电破坏功能及高散热效率，还可以提高发光二极管组件的发光亮度。
以上所述，仅为本发明中的较佳实施例而已，并非用来限定本发明实施的范围，即凡依本发明所述的内容及精神所做的均等变化与修饰，均应包括于本发明的专利范围内。

Claims (9)

1、一种多引脚式发光二极管组件，其特征在于，包括有：
一静电防护装置，具有一第一防护电极及一第二防护电极；
至少一发光晶粒，固设于该静电防护装置上，每一个发光晶粒的第一电极及第二电极分别电性连接于相对应的该第一防护电极及该第二防护电极；
一容置座，用以固设该发光晶粒及该静电防护装置，而其下方连接设有至少一散热引脚；
至少一第一导电引脚，电性连接于该第一防护电极；及
至少一第二导电引脚，电性连接于该第二防护电极。
2、根据权利要求1所述的发光二极管组件，其特征在于，该发光晶粒采用覆晶方式黏合于该静电防护装置上。
3、根据权利要求1所述的发光二极管组件，其特征在于，该静电防护装置利用锡膏、银胶、导热胶、金-硅、金-锡及其组合式的其中之一材质而固设于该容置座上。
4、根据权利要求1所述的发光二极管组件，其特征在于，还设有一保护层，该保护层包覆该静电防护装置、发光晶粒、容置座、第一导电引脚的部份、第二导电引脚的部份及散热引脚的部份。
5、根据权利要求4所述的发光二极管组件，其特征在于，该保护层选择为一玻璃、塑料、环氧树脂及其组合式的其中之一材质。
6、根据权利要求1所述的发光二极管组件，其特征在于，该第一防护电极及第二防护电极分别通过一第一导线及一第二导线而电性连接于相对应的该第一导电引脚及第二导电引脚。
7、根据权利要求1所述的发光二极管组件，其特征在于，该静电保护装置为一静电保护集成电路、萧特基二极管、齐纳二极管、电压限制器、等效二极管及其组合式的其中之一。
8、根据权利要求1所述的发光二极管组件，其特征在于，该散热引脚连接设于该容置座的侧边。
9、根据权利要求1所述的发光二极管组件，其特征在于，该散热引脚与该第一导电引脚及第二导电引脚的其中之一结合为一体。
CNA2004100043126A 2004-02-13 2004-02-13 多引脚式发光二极管组件 Pending CN1558452A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2004100043126A CN1558452A (zh) 2004-02-13 2004-02-13 多引脚式发光二极管组件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2004100043126A CN1558452A (zh) 2004-02-13 2004-02-13 多引脚式发光二极管组件

Publications (1)

Publication Number Publication Date
CN1558452A true CN1558452A (zh) 2004-12-29

Family

ID=34350808

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100043126A Pending CN1558452A (zh) 2004-02-13 2004-02-13 多引脚式发光二极管组件

Country Status (1)

Country Link
CN (1) CN1558452A (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008031281A1 (fr) * 2006-09-13 2008-03-20 Helio Optoelectronics Corporation Ampoule del séparée thermoélectrique enfichable combinée avec un refroidisseur
CN100421269C (zh) * 2005-06-03 2008-09-24 邢陈震仑 一种低热阻的发光二极管封装装置
CN100459195C (zh) * 2006-03-23 2009-02-04 财团法人工业技术研究院 可防止静电破坏的发光器封装结构及其制造方法
US7618165B2 (en) 2005-12-07 2009-11-17 Toyoda Gosei Co., Ltd. LED lamp unit
CN102128392A (zh) * 2010-12-08 2011-07-20 友达光电股份有限公司 光源模块及背光模块
CN105007694A (zh) * 2015-07-30 2015-10-28 苏州佳像视讯科技有限公司 一种电子元器件

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100421269C (zh) * 2005-06-03 2008-09-24 邢陈震仑 一种低热阻的发光二极管封装装置
US7618165B2 (en) 2005-12-07 2009-11-17 Toyoda Gosei Co., Ltd. LED lamp unit
CN100459195C (zh) * 2006-03-23 2009-02-04 财团法人工业技术研究院 可防止静电破坏的发光器封装结构及其制造方法
WO2008031281A1 (fr) * 2006-09-13 2008-03-20 Helio Optoelectronics Corporation Ampoule del séparée thermoélectrique enfichable combinée avec un refroidisseur
CN102128392A (zh) * 2010-12-08 2011-07-20 友达光电股份有限公司 光源模块及背光模块
CN102128392B (zh) * 2010-12-08 2013-02-06 友达光电股份有限公司 光源模块及背光模块
CN105007694A (zh) * 2015-07-30 2015-10-28 苏州佳像视讯科技有限公司 一种电子元器件

Similar Documents

Publication Publication Date Title
US8455895B2 (en) LED-based light source utilizing asymmetric conductors
US20080290363A1 (en) Light emitting diode package
CN101034233A (zh) 装备有发光二极管的背光装置
CN1873975A (zh) 具有静电放电损坏防护功能的高亮度发光二极管
US8432089B2 (en) Light source module and backlight module
US20080290357A1 (en) Light-emitting diode package
CN1591924A (zh) 表面安装型led及使用它的发光装置
CN101051665A (zh) 具有阳极化绝缘层的发光二极管封装及其制造方法
CN1630113A (zh) 半导体发光器件
TWI363161B (en) Light emitting diode lighting module with improved heat dissipation structure
CN1858825A (zh) Ic芯片散热结构和具有所述散热结构的等离子体显示模块
CN1579791A (zh) 光源装置
US20110180841A1 (en) Alternating current driven light emitting diode
KR20140118466A (ko) 발광 디바이스 및 이를 포함하는 조명장치
CN103348177A (zh) Led模块及照明组件
CN101030572A (zh) 发光二极管封装及其制造方法
CN1747105A (zh) 平面显示器及等离子体显示器
EP2184790A1 (en) Light emitting diode and llght source module having same
CN1558452A (zh) 多引脚式发光二极管组件
CN203521459U (zh) 发光组件和发光装置
CN2641451Y (zh) 以薄型发光二极管构成的照明装置
US9291311B2 (en) Illumination apparatus
CN1819254A (zh) 发光二极管芯片
CN101042498A (zh) 不具有印刷电路板的led背光单元及其制造方法
CN1206749C (zh) 一种高功率的发光二极管封装方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication