CN1553574A - Soft activated circuits - Google Patents
Soft activated circuits Download PDFInfo
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- CN1553574A CN1553574A CNA031239633A CN03123963A CN1553574A CN 1553574 A CN1553574 A CN 1553574A CN A031239633 A CNA031239633 A CN A031239633A CN 03123963 A CN03123963 A CN 03123963A CN 1553574 A CN1553574 A CN 1553574A
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Abstract
This invention is relative to a soft enable circuit. It comprises: a first current mirror, a second current mirror, a first metal half field transistor, a second metal half field transistor and a capacitor. By connecting the first metal half field transistor, the second mirror and the second half field transistor with the capacitor the ratio of the soft enable voltage to the time generated from the soft enable circuit is reduced, and by means of increasing the equivalent capacitance of the capacitor to make the soft enable circuit can be made by a capacitor with less capacitance.
Description
Technical field
The present invention relates to a kind of soft active circuit, particularly relate to a kind of equivalent capacitance value that increases soft active circuit, make the soft active circuit that soft active circuit can be made with the electric capacity of a smaller capacitive value.
Background technology
The principle of soft activation (Soft-start) circuit, be to use the charging circuit and a control circuit of a resistance capacitance (RC) to couple, the moment of power supply on load rigidly connects, the electric current that utilizes the resistance capacitance charging circuit to make control circuit allow to flow through load increases with speed comparatively slowly, meaning promptly makes by the electric current energy of load controlled, to slow down the big electric current that power supply produced when connecting load load and other is coupled the injury of circuit.
Known a kind of soft active circuit as shown in Figure 1, this soft active circuit 10 is made up of a fixing current source 11 and an electric capacity 12, and with the to be measured node of the series connection node A between current source 11 and the electric capacity 12 as soft activation voltage.
The electric current of supposing current source 11 is that the soft activation voltage of I, series connection node A is that the capacitance of V (soft-start) and electric capacity 12 is C, by formula V (soft-start)/T=I/C as can be known, because electric current I is a fixed value, therefore if want to obtain less V (soft-start)/T ratio under the fixing situation of soft activation voltage V (soft-start), then the capacitance of electric capacity 12 is that C needs enough sizes just can satisfy.If to be applicable to the capacitance commonly used of this kind of circuit at present, its size often is between 1nF～0.1uF, so the pairing electric capacity volume of capacitance is if place general electrical appliance circuit, and operate in the mode of an external capacitor no problem naturally, yet if desire is used for integrated circuit (IntegratedCircuits with this technology, IC) in, following two kinds of difficulties then can appear:
1. the electric capacity volume that has above-mentioned capacitance is excessive, can't be integrated in the manufacture process of integrated circuit, so can't meet the trend that the integrated circuit volume dwindles day by day.
2. if desire the produced electric capacity that requires with the processing procedure size of the integrated circuit of can arranging in pairs or groups, but its capacitance is not enough for bringing into play the defencive function of soft active circuit.
Summary of the invention
Main purpose of the present invention provides a kind of soft active circuit, the mode of its circuit arrangement can reduce from the soft activation voltage of this soft active circuit generation and the ratio of time, so as to amplifying the effective value of the contained electric capacity of this soft active circuit, can make with this electric capacity of a smaller capacitive value (smaller volume) when making this soft active circuit.
The present invention can realize by following measure:
According to conception of the present invention, a kind of soft active circuit is proposed, it comprises: one first current source, its input are connected in one first voltage; One transistor, one first end is connected in the output of this first current source, and one second end is connected in one second voltage; And an electric capacity, the one end is connected in the output of this first current source, and its other end is connected in this transistorized input; Utilize coupling of this this electric capacity of transistor AND gate, reduce,, make this soft active circuit to make with this electric capacity of a smaller capacitive value so as to increasing the equivalent capacitance value of this electric capacity from the soft activation voltage of this soft active circuit generation and the ratio of time.
According to above-mentioned conception, wherein this first current source is to be a current mirror.
According to above-mentioned conception, wherein this current mirror is to be coupled by two identical P type metal-oxide half field effect transistors (MOSFET) to form.
According to above-mentioned conception, wherein the input of this current mirror is connected in the input of one second current source, and the output of this current mirror is connected in an end of this transistorized this first end and this electric capacity, and the common source terminal of this current mirror is connected in this first voltage.
According to above-mentioned conception, wherein the output of this second current source is connected in this second voltage.
According to above-mentioned conception, wherein this first voltage is greater than this second voltage.
According to above-mentioned conception, wherein this transistor be a npn type bipolar junction transistor (bipolarjunction transistor, BJT).
According to above-mentioned conception, wherein this transistorized this first end is a collector terminal, and this transistorized this second end is the emitter-base bandgap grading end, and this transistorized control end is a base terminal.
According to above-mentioned conception, wherein this transistor is to be a darlington transistor (Darlingtontransistor).
According to above-mentioned conception, wherein this darlington transistor is coupled by one the one npn type bipolar junction transistor and one the 2nd npn type bipolar junction transistor and forms, and the base terminal of a npn type bipolar junction transistor is this transistorized input, the emitter-base bandgap grading end of the one npn type bipolar junction transistor is connected in the base terminal of the 2nd npn type bipolar junction transistor, the collector terminal of the one npn type bipolar junction transistor is connected in the collector terminal of the 2nd npn type bipolar junction transistor to constitute this transistorized this first end, and the emitter-base bandgap grading end of the 2nd npn type bipolar junction transistor is this transistorized this second end.
According to another conception of the present invention, a kind of soft active circuit is proposed, it comprises: a current source, its output are connected in one first voltage; One first current mirror, its input is connected in the input of this current source, and its common source terminal is connected in one second voltage; One first metal-oxide half field effect transistor (MOSFET), its source terminal is connected in this second voltage, and its gate terminal is connected in the common gate end of this first current mirror; One second metal-oxide half field effect transistor, its drain electrode end is connected in the output of this first current mirror, and its source terminal is connected in this first voltage; One electric capacity, one end are connected in the output of this first current mirror and the drain electrode end of this second metal-oxide half field effect transistor, and its other end is connected in the gate terminal of this second metal-oxide half field effect transistor; And one second current mirror, its input is connected in the drain electrode end of this first metal-oxide half field effect transistor, and its common source terminal is connected in this first voltage, and its output is connected in the gate terminal of the other end and this second metal-oxide half field effect transistor of this electric capacity; Utilize coupling of this first current mirror, this first metal-oxide half field effect transistor, this second current mirror and this second metal-oxide half field effect transistor and this electric capacity, reduce from the soft activation voltage of this soft active circuit generation and the ratio of time, so as to increasing the equivalent capacitance value of this electric capacity, make this soft active circuit to make with this electric capacity of a smaller capacitive value.
According to above-mentioned conception, wherein this first voltage is less than this second voltage.
According to above-mentioned conception, wherein this first current mirror is to be coupled by two identical P type metal-oxide half field effect transistor transistors to form.
According to above-mentioned conception, wherein this first metal-oxide half field effect transistor is a P type metal-oxide half field effect transistor, and its channel region (Channel) breadth length ratio (Aspect Ratio) is less than the channel region length-width ratio of a P type metal-oxide half field effect transistor.
According to above-mentioned conception, wherein this second metal-oxide half field effect transistor is a N type metal-oxide half field effect transistor.
According to above-mentioned conception, wherein this second current mirror is to be coupled by one the one N type metal-oxide half field effect transistor and one the 2nd N type metal-oxide half field effect transistor to form.
According to above-mentioned conception, wherein the drain electrode of a N type metal-oxide half field effect transistor is the input of this second current mirror, and the drain electrode of the 2nd N type metal-oxide half field effect transistor is the output of this second current mirror.
According to above-mentioned conception, wherein the channel region breadth length ratio of a N type metal-oxide half field effect transistor is greater than the channel region breadth length ratio of the 2nd N type metal-oxide half field effect transistor.
According to a conception more of the present invention, a kind of soft active circuit is proposed, it comprises: a current source, its output are connected in one first voltage; One first current mirror, its input is connected in the input of this current source, and its common source terminal is connected in one second voltage; One first metal-oxide half field effect transistor (MOSFET), its source terminal is connected in this second voltage, and its gate terminal is connected in the common gate of this first current mirror; One second metal-oxide half field effect transistor, its drain electrode end is connected in the drain electrode end of this first transistor, and the one source terminal is connected in this first voltage; One electric capacity, one end are connected in the drain electrode end of this first metal-oxide half field effect transistor and the drain electrode end of this second metal-oxide half field effect transistor, and its other end is connected in the gate terminal of this second metal-oxide half field effect transistor; And one second current mirror, its input is connected in the output of this first current mirror, and its common source terminal is connected in this first voltage, and its output is connected in the gate terminal of the other end and this second metal-oxide half field effect transistor of this electric capacity; Utilize coupling of this first current mirror, this first metal-oxide half field effect transistor, this second current mirror and this second metal-oxide half field effect transistor and this electric capacity, reduce from the soft activation voltage of this soft active circuit generation and the ratio of time, so as to increasing the equivalent capacitance value of this electric capacity, make this soft active circuit to make with this electric capacity of a smaller capacitive value.
According to above-mentioned conception, wherein this first voltage is less than this second voltage.
According to above-mentioned conception, wherein this first current mirror is to be coupled by one the one P type metal-oxide half field effect transistor and one the 2nd P type metal-oxide half field effect transistor to form.
According to above-mentioned conception, wherein the drain electrode of a P type metal-oxide half field effect transistor is the input of this first current mirror, and the drain electrode of the 2nd P type metal-oxide half field effect transistor is the output of this first current mirror.
According to above-mentioned conception, wherein channel region (Channel) breadth length ratio (Aspect Ratio) of a P type metal-oxide half field effect transistor is greater than the channel region length-width ratio of the 2nd P type metal-oxide half field effect transistor.
According to above-mentioned conception, wherein this first metal-oxide half field effect transistor is a P type metal-oxide half field effect transistor.
According to above-mentioned conception, wherein this second metal-oxide half field effect transistor is a N type metal-oxide half field effect transistor.
According to above-mentioned conception, wherein this second current mirror is to be coupled by one the one N type metal-oxide half field effect transistor and one the 2nd N type metal-oxide half field effect transistor to form.
According to above-mentioned conception, wherein the drain electrode of a N type metal-oxide half field effect transistor is the input of this second current mirror, and the drain electrode of the 2nd N type metal-oxide half field effect transistor is the output of this second current mirror.
According to above-mentioned conception, wherein the channel region breadth length ratio of a N type metal-oxide half field effect transistor is greater than the channel region breadth length ratio of the 2nd N type metal-oxide half field effect transistor.
The invention has the advantages that: the mode of circuit arrangement of the present invention can reduce from the soft activation voltage of this soft active circuit generation and the ratio of time, so as to amplifying the effective value of the contained electric capacity of this soft active circuit, can make with this electric capacity of a smaller capacitive value (smaller volume) when making this soft active circuit, thereby can be integrated in the manufacture process of integrated circuit, meet the trend that the integrated circuit volume dwindles day by day.
The present invention also will be described in further detail embodiment in conjunction with the accompanying drawings.
Description of drawings
Fig. 1: the circuit diagram of known soft active circuit;
Fig. 2: the circuit diagram of the soft active circuit of the present invention's first preferred embodiment;
Fig. 3: the circuit diagram of the soft active circuit of the present invention's second preferred embodiment; And
Fig. 4: the circuit diagram of the soft active circuit of the present invention's the 3rd preferred embodiment.
Wherein, description of reference numerals is as follows:
Soft active circuit 10,20,30,40
Npn type bipolar junction transistor 24,341,342
P type metal-oxide half field effect transistor 221,222,321,322,42,43,44
High voltage 25,35,491
Low-voltage 26,36,492
Darlington transistor 34
N type metal-oxide half field effect transistor 45,46,47
Embodiment
See also Fig. 2, it is the circuit diagram of the soft active circuit of the present invention's first preferred embodiment.As shown in Figure 2, this soft active circuit 20 is to be coupled by current source 21, current mirror 22, electric capacity 23 and npn type bipolar junction transistor (BJT) 24 to form.Wherein, current mirror 22 is to be coupled by two identical P type metal-oxide half field effect transistors (MOSFET) 221 and 222 to form, and the gate terminal of P type metal-oxide half field effect transistor 221 and 222 is connected to each other, source terminal is connected in high voltage 25 jointly, and the drain electrode end of P type metal-oxide half field effect transistor 221 forms the input of current mirror 22, and the drain electrode end of P type metal-oxide half field effect transistor 222 forms the output of current mirror 22.
In addition, the input of current mirror 22 is connected in the input of current source 21, the output of current mirror 22 is connected in an end of electric capacity 23 and the collector terminal of npn (Negative-Positive-Negative negative pole-positive pole-negative pole) type bipolar junction transistor 24, the other end of electric capacity 23 then is connected in the base terminal of npn type bipolar junction transistor 24, and the emitter-base bandgap grading end of the output of current source 21 and npn type bipolar junction transistor 24 is connected in low-voltage 26 jointly.
As seen from Figure 2, via the reflection of current mirror 22, the feasible size of current that flows out from the emitter-base bandgap grading end of npn type bipolar junction transistor 24 also is I ' to the electric current (supposing that its size is I ') of deciding that current source 21 produces.Because the element characteristic of npn type bipolar junction transistor, the feasible electric current that flows to the base terminal of npn type bipolar junction transistor 24, flowing to the electric current of collector terminal of npn type bipolar junction transistor 24 and the electric current that flows out the emitter-base bandgap grading end of npn type bipolar junction transistor 24, to have a proportionate relationship to each other be 1: b: (b+1), therefore electric current (promptly flowing to the electric current of the base terminal of the npn type bipolar junction transistor 24) size of electric capacity 23 of flowing through then is I '/(b+1), (many at 100 to 200 with the npn type bipolar junction transistor in modern times) can be considered as I '/b with the size of current of the electric capacity 23 of flowing through when b is enough big.With the electric current I place of this I '/b value substitution formula V (soft-start)/T=I/C, can get V (soft-start)/T=(I '/b)/C, also can regard as
V(soft-start)/T＝I’/(bC)。Hence one can see that, under the fixing situation of soft activation voltage V (soft-start), want to obtain less V (soft-start)/T ratio, if utilize soft active circuit of the present invention, the equivalent capacitance value of electric capacity 23 can be amplified b doubly, the feasible electric capacity that can utilize tool one smaller capacitive value is made soft activation voltage and time ratio (the soft active circuit that V (soft-start)/T) is enough little.
See also Fig. 3, it is the circuit diagram of the soft active circuit of the present invention's second preferred embodiment.As shown in Figure 3, this soft active circuit 30 is to be coupled by current source 31, current mirror 32, electric capacity 33 and darlington transistor (Darlington transistor) 34 to form.Wherein, current mirror 32 is to be coupled by two identical P type metal-oxide half field effect transistors 321 and 322 to form, and the gate terminal of P type metal-oxide half field effect transistor 321 and 322 is connected to each other, source terminal is connected in high voltage 35 jointly, and the drain electrode end of P type metal-oxide half field effect transistor 321 forms the input of current mirror 32, and the drain electrode end of P type metal-oxide half field effect transistor 322 forms the output of current mirror 32.
In addition, darlington transistor 34 is to be coupled by two identical npn type bipolar junction transistors 341 and 342 to form, wherein the base terminal of npn type bipolar junction transistor 341 is the input of darlington transistor 34, after joining each other, npn type bipolar junction transistor 341 and 342 collector terminal be connected in the output of current mirror 32, the emitter-base bandgap grading end of npn type bipolar junction transistor 341 is connected in the base terminal of npn type bipolar junction transistor 342, and the emitter-base bandgap grading end of npn type bipolar junction transistor 342 then is connected in low-voltage 36.
And, the input of current mirror 32 is connected in the input of current source 31, the output of current mirror 32 is connected in an end of electric capacity 33 and the common collector terminal of npn type bipolar junction transistor 341 and 342, the other end of electric capacity 33 then is connected in the input of darlington transistor 34, and the output of current source 31 also is connected in low-voltage 36.
As seen from Figure 3, current source 31 produces decides electric current (suppose that its size is I ") via the reflection of current mirror 32, and the size of current that makes emitter-base bandgap grading end from npn type bipolar junction transistor 342 flow out also is I ".(suppose to flow to the collector terminal of npn type bipolar junction transistor 341 and the current ratio of base terminal is b because the element characteristic of darlington transistor, npn type bipolar junction transistor 342 also with), making the electric current of electric current and the emitter-base bandgap grading end that flows out npn type bipolar junction transistor 342 of the base terminal flow to npn type bipolar junction transistor 341 have to each other that a ratio closes is 1: (b+1)
2, electric current (promptly flowing to the electric current of the base terminal of the npn type bipolar junction transistor 341) size of the electric capacity 33 of therefore flowing through then is I "/(b+1)
2, (many at 100 to 200 with the npn type bipolar junction transistor in modern times) can be considered as I with the size of current of the electric capacity 33 of flowing through when b is enough big "/t
2With this I "/b
2The value substitution formula V (soft-start)/T=I/C the electric current I place, can get V (soft-start)/T=(I "/b
2)/C also can regard as
V(soft-start)/T＝I”/(b
2C)。Hence one can see that, wants to obtain less V (soft-start)/T ratio under the fixing situation of soft activation voltage V (soft-start), if utilize soft active circuit of the present invention, the equivalent capacitance value of electric capacity 23 can be amplified b
2Doubly, the feasible electric capacity that can utilize tool one minimum capacitance is made soft activation voltage and time ratio (the enough little soft active circuits of V (soft-start)/T).
See also Fig. 4, it is the circuit diagram of the soft active circuit of the present invention's the 3rd preferred embodiment, different with first and second preferred embodiment be in, the 3rd preferred embodiment is to be a CMOS (Complementary Metal Oxide Semiconductor) (Complementary MOS, the circuit layout of CMOS) making.As shown in Figure 4, this soft active circuit 40 is to be coupled and formed by current source 41, three P type metal-oxide half field effect transistors (42,43 and 44), three N type metal-oxide half field effect transistors (45,46 and 47) and electric capacity 48.Wherein, P type metal-oxide half field effect transistor 42 and 44 leakage, the channel between source terminal (Channel) breadth length ratio (Aspect Ratio) are mutually the same, but are all the multiple (being assumed to be n doubly) of the channel breadth length ratio of P type metal-oxide half field effect transistor 43.The channel breadth length ratio of N type metal-oxide half field effect transistor 45 then is the multiple of N type metal-oxide half field effect transistor 46 (being assumed to be m doubly).
In Fig. 4, P type metal-oxide half field effect transistor 42,43 and 44 source terminal all are connected in high voltage 491, and three's gate terminal is connected with each other and common short circuit in the drain electrode end of P type metal-oxide half field effect transistor 42, the drain electrode end of P type metal-oxide half field effect transistor 42 is connected with the input of current source 41 in addition, and the output of current source 41 then is connected to low-voltage 492.Therefore, also to form an electric current reflection multiplying power jointly be 1 current mirror for P type metal-oxide half field effect transistor 42 and 43 common to form an electric current reflection multiplying power be the current mirror of 1/n, P type metal-oxide half field effect transistor 42 and 44.
In addition, 45 modes with grid, drain electrode end short circuit of N type metal-oxide half field effect transistor are connected with the drain electrode end of P type metal-oxide half field effect transistor 43, N type metal-oxide half field effect transistor 45 is the current mirror of 1/m with the mode and an electric current reflection of the N type metal-oxide half field effect transistor 46 compositions multiplying power of common gate end, and common source terminal then is connected with low-voltage 492.
At last, the drain electrode end of N type metal-oxide half field effect transistor 47 and an end of electric capacity 48 are connected to the drain electrode end of P type metal-oxide half field effect transistor 44 jointly, be connected to the drain electrode end of N type metal-oxide half field effect transistor 46 after the gate terminal of N type metal-oxide half field effect transistor 47 and the other end short circuit of electric capacity 48 jointly, the source terminal of N type metal-oxide half field effect transistor 47 also is connected with low-voltage 492.
As seen from Figure 4, via the reflection of P type metal-oxide half field effect transistor 42 and the 44 common current mirrors of forming, the feasible size of current that flows out from the drain electrode end of P type metal-oxide half field effect transistor 44 also is I to the electric current (supposing that its size is I ) of deciding of current source 41 generations.
In addition, reflection via P type metal-oxide half field effect transistor 42 and the 43 common current mirrors of forming, the feasible size of current that flows out from the drain electrode end of P type metal-oxide half field effect transistor 43 is I /n, this electric current is again via the reflection of N type metal-oxide half field effect transistor 45 and the 46 common current mirrors of forming, and makes the size of current of the drain electrode end that flows to N type metal-oxide half field effect transistor 46 become I /(mn).Compare minimumly owing to flow to electric current and the I of the gate terminal of N type metal-oxide half field effect transistor 47/(mn), so the size of current of the electric capacity 48 of flowing through can be considered as I /(mn).
The flow through size of current of electric capacity 48 is considered as I /(mn) because the size of current that flow out from the drain electrode end of P type metal-oxide half field effect transistor 44 (1) is I (2), and when m and n are enough big (many more than 25 with the metal-oxide half field effect transistor in modern times), with the electric current I place of substitution formula V (soft-start)/T=I/C of the current value I of the electric capacity 33 of flowing through/(mn), (I /mn)/C also can regard as can to get V (soft-start)/T=
V(soft-start)/T＝I”/(mnC)。Hence one can see that, under the fixing situation of soft activation voltage V (soft-start), want to obtain less V (soft-start)/T ratio, if utilize soft active circuit of the present invention, the equivalent capacitance value of electric capacity 23 can be amplified mn doubly, the feasible electric capacity that can utilize tool one minimum capacitance is made soft activation voltage and time ratio (the enough little soft active circuits of V (soft-start)/T).
By above three kinds of preferred embodiments as can be known, the mode of soft active circuit configuration of the present invention can be amplified the effective value of electric capacity really, make electric capacity that people can a smaller capacitive value (smaller volume) when making soft active circuit can reach less soft activation voltage and the ratio of time, just reach advancing the speed of the electric current of slow control by load, the effect that the system that makes can be safer when activating; Especially the soft active circuit of the 3rd preferred embodiment; be with the processing procedure of CMOS enforcement environment as circuit; the produced electric capacity that requires with the processing procedure size of the integrated circuit of can arranging in pairs or groups; and with configuration mode of the present invention; make effective capacitance value be large enough to bring into play the defencive function of soft active circuit; therefore can effectively integrate in the processing procedure of integrated circuit, meet the world trends that the integrated circuit volume dwindles day by day fully.So the present invention can solve the technological deficiency of known soft active circuit really, and then reaches research and development purpose of the present invention.
The present invention can do multiple modification by person skilled in the art person, but the scope that the appended claim institute desire of neither disengaging is protected.
Claims (10)
1, a kind of soft active circuit is characterized in that it comprises:
One first current source, its input are connected in one first voltage;
One transistor, one first end is connected in the output of this first current source, and one second end is connected in one second voltage; And
One electric capacity, the one end is connected in the output of this first current source, and its other end is connected in this transistorized input;
Utilize coupling of this this electric capacity of transistor AND gate, reduce,, make this soft active circuit to make with this electric capacity of a smaller capacitive value so as to increasing the equivalent capacitance value of this electric capacity from the soft activation voltage of this soft active circuit generation and the ratio of time.
2, soft active circuit as claimed in claim 1 is characterized in that:
This first current source is a current mirror;
This current mirror is to be coupled by two identical P type metal-oxide half field effect transistors to form;
The input of this current mirror is connected in the input of one second current source, and the output of this current mirror is connected in an end of this transistorized this first end and this electric capacity, and the common source terminal of this current mirror is connected in this first voltage; And/or
The output of this second current source is connected in this second voltage.
3, soft active circuit as claimed in claim 1 is characterized in that:
This first voltage is greater than this second voltage;
This transistor is a npn type bipolar junction transistor; And/or
This transistorized this first end is a collector terminal, and this transistorized this second end is the emitter-base bandgap grading end, and this transistorized control end is a base terminal.
4, soft active circuit as claimed in claim 1 is characterized in that:
This transistor is to be a darlington transistor; And/or
This darlington transistor is coupled by one the one npn type bipolar junction transistor and one the 2nd npn type bipolar junction transistor and forms, and the base terminal of a npn type bipolar junction transistor is this transistorized input, the emitter-base bandgap grading end of the one npn type bipolar junction transistor is connected in the base terminal of the 2nd npn type bipolar junction transistor, the collector terminal of the one npn type bipolar junction transistor is connected in the collector terminal of the 2nd npn type bipolar junction transistor to constitute this transistorized this first end, and the emitter-base bandgap grading end of the 2nd npn type bipolar junction transistor is this transistorized this second end.
5, a kind of soft active circuit is characterized in that it comprises:
One current source, its output are connected in one first voltage;
One first current mirror, its input is connected in the input of this current source, and its common source terminal is connected in one second voltage;
One first metal-oxide half field effect transistor, its source terminal are connected in this second voltage, and its gate terminal is connected in the common gate end of this first current mirror;
One second metal-oxide half field effect transistor, its drain electrode end is connected in the output of this first current mirror, and its source terminal is connected in this first voltage;
One electric capacity, one end are connected in the output of this first current mirror and the drain electrode end of this second metal-oxide half field effect transistor, and its other end is connected in the gate terminal of this second metal-oxide half field effect transistor; And
One second current mirror, its input is connected in the drain electrode end of this first metal-oxide half field effect transistor, and its common source terminal is connected in this first voltage, and its output is connected in the gate terminal of the other end and this transistor seconds of this electric capacity;
Utilize coupling of this first current mirror, this first metal-oxide half field effect transistor, this second current mirror and this second metal-oxide half field effect transistor and this electric capacity, reduce from the soft activation voltage of this soft active circuit generation and the ratio of time, so as to increasing the equivalent capacitance value of this electric capacity, make this soft active circuit to make with this electric capacity of a smaller capacitive value.
6, soft active circuit as claimed in claim 5 is characterized in that:
This first voltage is less than this second voltage;
This first current mirror is to be coupled by two identical P type metal-oxide half field effect transistor transistors to form; And/or
This first metal-oxide half field effect transistor is a P type metal-oxide half field effect transistor, and its channel region breadth length ratio is less than the channel region length-width ratio of a P type metal-oxide half field effect transistor.
7, soft active circuit as claimed in claim 5 is characterized in that:
This second metal-oxide half field effect transistor is a N type metal-oxide half field effect transistor;
This second current mirror is to be coupled by one the one N type metal-oxide half field effect transistor and one the 2nd N type metal-oxide half field effect transistor to form;
The drain electrode of the one N type metal-oxide half field effect transistor is the input of this second current mirror, and the drain electrode of the 2nd N type metal-oxide half field effect transistor is the output of this second current mirror; And/or
The channel region breadth length ratio of the one N type metal-oxide half field effect transistor is greater than the channel region breadth length ratio of the 2nd N type metal-oxide half field effect transistor.
8, a kind of soft active circuit is characterized in that it comprises:
One current source, its output are connected in one first voltage;
One first current mirror, its input is connected in the input of this current source, and its common source terminal is connected in one second voltage;
One first metal-oxide half field effect transistor, its source terminal are connected in this second voltage, and its gate terminal is connected in the common gate of this first current mirror;
One second metal-oxide half field effect transistor, its drain electrode end is connected in the drain electrode end of this first metal-oxide half field effect transistor, and the one source terminal is connected in this first voltage;
One electric capacity, one end are connected in the drain electrode end of this first metal-oxide half field effect transistor and the drain electrode end of this second metal-oxide half field effect transistor, and its other end is connected in the gate terminal of this second metal-oxide half field effect transistor; And
One second current mirror, its input is connected in the output of this first current mirror, and its common source terminal is connected in this first voltage, and its output is connected in the gate terminal of the other end and this second metal-oxide half field effect transistor of this electric capacity;
Utilize coupling of this first current mirror, this first metal-oxide half field effect transistor, this second current mirror and this second metal-oxide half field effect transistor and this electric capacity, reduce from the soft activation voltage of this soft active circuit generation and the ratio of time, so as to increasing the equivalent capacitance value of this electric capacity, make this soft active circuit to make with this electric capacity of a smaller capacitive value.
9, soft active circuit as claimed in claim 8 is characterized in that this first voltage is less than this second voltage.
10, soft active circuit as claimed in claim 8 is characterized in that:
This first current mirror is to be coupled by one the one P type metal-oxide half field effect transistor and one the 2nd P type metal-oxide half field effect transistor to form;
The drain electrode of the one P type metal-oxide half field effect transistor is the input of this first current mirror, and the drain electrode of the 2nd P type metal-oxide half field effect transistor is the output of this first current mirror; And/or
The channel region breadth length ratio of the one P type metal-oxide half field effect transistor is greater than the channel region length-width ratio of the 2nd P type metal-oxide half field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031239633A CN100375387C (en) | 2003-05-29 | 2003-05-29 | Soft activated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031239633A CN100375387C (en) | 2003-05-29 | 2003-05-29 | Soft activated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1553574A true CN1553574A (en) | 2004-12-08 |
| CN100375387C CN100375387C (en) | 2008-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031239633A Expired - Fee Related CN100375387C (en) | 2003-05-29 | 2003-05-29 | Soft activated circuits |
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| Country | Link |
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| CN (1) | CN100375387C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034592A (en) * | 2018-01-11 | 2019-07-19 | 晶豪科技股份有限公司 | Power stage circuit with charging current reduction |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11214978A (en) * | 1998-01-26 | 1999-08-06 | Mitsubishi Electric Corp | Semiconductor device |
| CN2494576Y (en) * | 2000-12-05 | 2002-06-05 | 哈尔滨九洲电气股份有限公司 | HF switch electric source soft starting device |
-
2003
- 2003-05-29 CN CNB031239633A patent/CN100375387C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034592A (en) * | 2018-01-11 | 2019-07-19 | 晶豪科技股份有限公司 | Power stage circuit with charging current reduction |
| CN110034592B (en) * | 2018-01-11 | 2022-02-11 | 晶豪科技股份有限公司 | Power stage circuit with charge current reduction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100375387C (en) | 2008-03-12 |
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