CN1547259A - Ceramic substrate polysilicon thin-film solar cell - Google Patents
Ceramic substrate polysilicon thin-film solar cell Download PDFInfo
- Publication number
- CN1547259A CN1547259A CNA2003101170957A CN200310117095A CN1547259A CN 1547259 A CN1547259 A CN 1547259A CN A2003101170957 A CNA2003101170957 A CN A2003101170957A CN 200310117095 A CN200310117095 A CN 200310117095A CN 1547259 A CN1547259 A CN 1547259A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- film solar
- crystal silicon
- silicon film
- positive electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 5
- 229920005591 polysilicon Polymers 0.000 title claims description 5
- 239000010409 thin film Substances 0.000 title description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052863 mullite Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000010329 laser etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of ceramic substrate multi-crystal silicon film solar energy battery and the manufacturing method. The invention deposits isolation layer and forms a p-type multi-crystal silicon film on the ceramic substrate, they dispersed to produce the p-n node, carries on laser etching to remove the n-type silicon layer on part area, the produced positive electrode is connected to the n-type silicon layer and the naked reversal electrode and p-type multi-crystal silicon film. In order to induce out the positive electrode and the negative electrode from the frontal surface of the battery, solves the problem that the ceramic substrate is insulated, the positive electrode can't be leaded out form the back surface. The material is easy to be acquired, the cost is low.
Description
Technical field
The invention belongs to the heliotechnics scope, particularly a kind of ceramic substrate multi-crystal silicon film solar battery.
Background technology
Progress along with expanding economy, society, people propose more and more higher requirement to the energy, be about in 20th century in the past, the high development of society is to be utilized as the basis with the unrestricted exploitation to natural resources, is representative with fuel such as oil, coal, natural gases especially wherein.According to the statistics of International Energy Agency, if develop down, do not add restraining by the present impetus, so, on the earth these three kinds of energy can have only 40 years respectively for the time limit of human exploitation, 50 years and 240 years.Global energy problem makes the searching new forms of energy become the urgent problem that current mankind faces.On the other hand, the fast development of modernization industry has caused the severe contamination of environment, and has caused a series of problems such as weather, health, ecology thus.The two large problems that energy and environment have become world development and faced.
It is very huge to be radiated at tellurian solar energy, and according to estimates, per three days sun just are equivalent to the summation of all fossil fuel energy of the earth to the energy of terrestrial radiation; Be radiated at tellurian solar energy in about 40 minutes, and just be enough to consumption for 1 year energy of global human.We can say that solar energy is really inexhaustible, the nexhaustible energy.Solar cell can directly change into solar energy electric energy and use for human, it is the effective means of utilizing solar energy resources, and it in use can not produce any harmful substance, is a kind of free of contamination product therefore, it is reliable also to have system in addition, long-life, advantage such as easy to install, so, solar cell is gaining great popularity aspect the solution energy and environment problem, and being described as is perfect energy sources.Predict middle period next century, solar energy power generating will reach world gross generation 15-20%, become one of human basic energy resource.
Solar cell has sizable market potential, and battery efficiency is also improving constantly, but still popularization and application on a large scale, and major obstacle is that also cost is higher.So, using at present more on the ground mainly is in the test and exemplary project of being paid the bill by government, or the place of being convenient to use photovoltaic generation, such as: portable solar module, as electric power system away from electrical network, as the power supply of marine navigational aid, or the power supply of some remote equipments etc.
The approach that addresses this problem has two, the one, increase substantially battery efficiency, improve the ratio of performance to price, yet, theoretically, the theoretical upper limit of its efficient of solar cell that current material is made is not high, and is the highest less than 30%, and existing technological level has made battery efficiency and theoretical limit be more or less the same.Therefore, it is little to increase substantially the battery efficiency possibility.Another way of dealing with problems is to reduce cost, and this has become the importance in the present solar cell research.Such as, by reducing means such as material consumption, simplification technology, change structure, be cost in the hope of sacrificing certain battery efficiency, reduce cost, get the suitable ratio of performance to price.
Summary of the invention
The object of the present invention is to provide a kind of ceramic substrate multi-crystal silicon film solar battery, it is characterized in that: adopt the LPCVD method, deposition forms the thick SiO of 2 μ m on ceramic substrate 1
2Separator 2, the method that the back is soaked into CVD deposition or molten silicon forms the p type silicon thin film 3 of one deck 10 μ m on separator 2, diffusion preparation p-n junction utilizes laser grooving to peel off n type layer 4 and will make p type layer 3 exposed, so that positive electrode 5, counterelectrode 6 are all drawn from battery front side; The positive electrode of making 5 is connected with p type polysilicon membrane 3 with the counterelectrode 6 that n type silicon layer 4 is connected, exposes.
Described ceramic substrate material is 99%Al
2O
3Ceramic, pure SiC or mullite are prepared into the pottery of surfacing, fine and close flaky material.
Described separator is Si
3N
4, SiC, SiO
2The single or multiple lift film.
The invention has the beneficial effects as follows that 1. ceramic substrate multi-crystal silicon film solar battery positive electrodes, counterelectrode all draw from the surface, it is non-conductive to have solved ceramic substrate, the problem that counterelectrode can't be drawn from the back side.2. material is easy to get, and cost is low, technical maturity, ratio of performance to price height.
Description of drawings
Fig. 1 is the profile of ceramic substrate multi-crystal silicon film solar battery sample.
Fig. 2 is the front view of ceramic substrate multi-crystal silicon film solar battery sample.
Embodiment
The present invention is a kind of ceramic substrate multi-crystal silicon film solar battery, is to adopt the LPCVD method, and be 99%Al at material
2O
3Ceramic or pure SiC or mullite etc. can be prepared into that deposition forms the thick Si of 2 μ m on the ceramic substrate 1 of surfacing, fine and close sheet
3N
4, SiC or SiO
2The separator 2 of single or multiple lift film, the method that the back is soaked into CVD deposition or molten silicon forms the p type silicon thin film 3 of one deck 10 μ m on separator 2, diffusion preparation p-n junction, utilize laser grooving to peel off n type layer 4, make p type layer 3 exposed, so that positive electrode 5, counterelectrode 6 are all drawn from battery front side; The positive electrode of making 5 is connected with p type polysilicon membrane 3 with the counterelectrode 6 that n type silicon layer 4 is connected, exposes.
Lifting specific embodiment is below again further specified the present invention.
Embodiment 1
Employing purity is 99%Al
2O
3Ceramic material is made into the base sheet of 30mm * 20mm * 0.5mm through flow casting molding, fires, flattens, polishes the back and clean.
LPCVD equipment is evacuated to 0.08 holder, successively uses N
2, HCL purge of gas boiler tube, be warming up to 800 ℃, logical SiH
4And NH
4Gas, flow are respectively SiH
4: 5.0sccm; NH
4: 180sccm, as the figure one ceramic substrate surface coverage function SiO that is shown in
2Separator 2.
With SiH
2Cl
2Be unstrpped gas, adopt RTCVD technology depositing silicon film in quartz reactor.Source of the gas employing proportioning is 150: 0.4 H
2And SiH
2Cl
2Mist.Logical successively N under 1200 ℃
2Gas 20 minutes, logical H
23 minutes, logical SiH
2Cl
2Gas and B
2H
6Gas is growth ending after 30 minutes.
Sample is handled the back according to the diffusion technology of conventional body materials for solar cells peel off n type silicon layer, at surperficial electrode evaporation grid line, can obtain the ceramic substrate multi-crystal silicon film solar battery then with laser scribing means.
Embodiment 2
Pure SiC powder cleans after hot pressed sintering, leveling, the polishing through the dry-pressing formed thick Φ of the 1mm 30 base sheets that are made into.High-purity silicon powder melts in silica crucible in Ar gas shiled stove, and the SiC potsherd is immersed in the liquid molten silicon, at the uniform velocity pulls out with the speed of 1cm/s, can form one deck silicon thin film on the potsherd surface.
Can obtain the ceramic substrate multi-crystal silicon film solar battery after sample spread, peels off n type layer, electrode evaporation technology by the method for embodiment 1.
Claims (3)
1. ceramic substrate multi-crystal silicon film solar battery, it is characterized in that: go up layer deposited isolating (2) in ceramic substrate (1), go up formation p type polysilicon membrane (3) at separator (2), diffusion preparation p-n junction, the subregional n type of laser grooving stripping portion silicon layer (4), the positive electrode of making (5) is connected with p type polysilicon membrane (3) with the counterelectrode (6) that n type silicon layer (4) is connected, exposes; Positive electrode (5) and counterelectrode (6) are all drawn from battery front side.
2. according to the described ceramic substrate multi-crystal silicon film solar battery of claim 1, it is characterized in that: described ceramic substrate material is 99%Al
2O
3Ceramic, pure SiC or mullite.
3. according to the described ceramic substrate multi-crystal silicon film solar battery of claim 1, it is characterized in that: described separator is Si
3N
4, SiC or SiO
2The single or multiple lift film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101170957A CN100386887C (en) | 2003-12-09 | 2003-12-09 | Ceramic substrate polysilicon thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101170957A CN100386887C (en) | 2003-12-09 | 2003-12-09 | Ceramic substrate polysilicon thin-film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1547259A true CN1547259A (en) | 2004-11-17 |
| CN100386887C CN100386887C (en) | 2008-05-07 |
Family
ID=34337695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101170957A Expired - Fee Related CN100386887C (en) | 2003-12-09 | 2003-12-09 | Ceramic substrate polysilicon thin-film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100386887C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100416863C (en) * | 2006-10-13 | 2008-09-03 | 中国科学院上海技术物理研究所 | Cheap polysilicon thin film solar cell |
| CN111755321A (en) * | 2020-05-20 | 2020-10-09 | 嘉兴市轩禾园艺技术有限公司 | Preparation method of polycrystalline silicon semiconductor film substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002185024A (en) * | 2000-12-13 | 2002-06-28 | National Institute Of Advanced Industrial & Technology | Solar battery and manufacturing method therefor |
| JP3751539B2 (en) * | 2001-04-17 | 2006-03-01 | シャープ株式会社 | Thin film solar cell and manufacturing method thereof |
| JP2003258274A (en) * | 2002-02-27 | 2003-09-12 | Nissha Printing Co Ltd | Method of manufacturing lower electrode of thin film solar cell |
-
2003
- 2003-12-09 CN CNB2003101170957A patent/CN100386887C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100416863C (en) * | 2006-10-13 | 2008-09-03 | 中国科学院上海技术物理研究所 | Cheap polysilicon thin film solar cell |
| CN111755321A (en) * | 2020-05-20 | 2020-10-09 | 嘉兴市轩禾园艺技术有限公司 | Preparation method of polycrystalline silicon semiconductor film substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100386887C (en) | 2008-05-07 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: LIAONING NANGUANG ENERGY-SAVING TECHNOLOGY CO. LTD Free format text: FORMER OWNER: TSINGHUA UNIVERSITY Effective date: 20100730 |
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| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100084 MAILBOX 100084-82, BEIJING CITY TO: 112000 WENZHUANGZI DIVISION, ECONOMIC DEVELOPMENT ZONE, TIELING CITY, LIAONING PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20100730 Address after: 112000 Liaoning Province, Tieling City Economic Development Zone Chuang-tzu temperature field Patentee after: Liaoning Nanguang Energy Technology Co. Ltd. Address before: 100084 Beijing 100084-82 mailbox Patentee before: Tsinghua University |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080507 Termination date: 20151209 |
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| EXPY | Termination of patent right or utility model |