CN1546740A - Method of depositing big grain polycrystalline silicon thin film on ceramic substrate - Google Patents
Method of depositing big grain polycrystalline silicon thin film on ceramic substrate Download PDFInfo
- Publication number
- CN1546740A CN1546740A CNA2003101170942A CN200310117094A CN1546740A CN 1546740 A CN1546740 A CN 1546740A CN A2003101170942 A CNA2003101170942 A CN A2003101170942A CN 200310117094 A CN200310117094 A CN 200310117094A CN 1546740 A CN1546740 A CN 1546740A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- suspension
- polysilicon film
- grain size
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000000151 deposition Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000725 suspension Substances 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 235000013339 cereals Nutrition 0.000 claims description 13
- 235000013312 flour Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000007669 thermal treatment Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 4
- PGQAXGHQYGXVDC-UHFFFAOYSA-N dodecyl(dimethyl)azanium;chloride Chemical compound Cl.CCCCCCCCCCCCN(C)C PGQAXGHQYGXVDC-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052863 mullite Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention belongs to the technology field of solar battery elements manufacture, in particular relates to a method of depositing big grain polycrystalline silicon thin film on ceramic substrate which comprises, disintegrating the single-crystal silicon into particles, planting seed crystal of a finite density on the ceramic substrate surface, and preparing big grain polycrystalline silicon thin films through RTCVD deposition technique.
Description
Technical field
The invention belongs to solar cell parts technology of preparing in addition, particularly simple, the effective a kind of method that on ceramic substrate, deposits large grain size polysilicon film of technology.
Background technology
The deposition large grain size polysilicon film is to prepare the critical process of ceramic substrate multi-crystal silicon film solar battery efficiently.But adopt present depositing operation to be difficult in the polysilicon membrane that directly deposits big crystal grain on the ceramic substrate.In order on ceramic substrate, to prepare large grain size polysilicon film, usually the method for taking is to deposit the less silicon film of crystal grain with the CVD technology on substrate earlier, adopt zone melting recrystallization (ZMR) technology to increase grain-size then, but this method has increased several processing steps, and production cost is increased substantially.Therefore find a kind of method of deposition large grain size polysilicon film of simple possible that the development and application of ceramic substrate multi-crystal silicon film solar battery is cheaply had great importance.
Summary of the invention
The object of the present invention is to provide a kind of method that on ceramic substrate, deposits large grain size polysilicon film; This method is earlier behind ceramic substrate surface plantation seed crystal, adopts the RTCVD deposition technique to prepare large grain size polysilicon film, and it is characterized in that: this method may further comprise the steps:
1). the monocrystalline silica flour and the organic liquid of granularity 0.5-2 micron are mixed and made into suspension, and the shared mass percent of polycrystalline silica flour is 0.001～1% in the suspension;
2). adopt the method for spraying or dipping that suspension is coated on the pottery tree at the end;
3). the ceramic substrate that will scribble suspension is at 400-600 ℃, and flow velocity is under the argon shield of 12L/min behind the thermal treatment 25-45min, and thermal treatment 15-30min under 900-1100 ℃ temperature is so that form more firm combining between polycrysalline silcon and substrate;
4). the substrate after will handling through (3) is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 60-160sccm, H
2Flow velocity is 0.05-0.50sccm, and pressure is 40Torr, promptly obtains the polysilicon membrane of grain-size about 15 microns at 1050 ℃ condition deposit 20min.
Described ceramic substrate is meant Al
2O
3Ceramic substrate, SiO
2Ceramic substrate, mullite ceramic substrate, SiC ceramic substrate or Si
3N
4Ceramic substrate.
Described organic liquid is the balanced mix solution of dehydrated alcohol and two dodecyl dimethyl ammonium chloride dispersion agents.
The invention has the beneficial effects as follows that processing step is simple, production cost is reduced significantly, the development and application of ceramic substrate multi-crystal silicon film solar battery is cheaply had great importance.
Embodiment
The present invention is a kind of method that deposits large grain size polysilicon film on ceramic substrate.This method is to pass through earlier to adopt the RTCVD deposition technique to prepare large grain size polysilicon film behind the certain density seed crystal of ceramic substrate surface plantation.This method may further comprise the steps successively:
1). the monocrystalline silica flour of granularity 0.5-2 micron is become suspension with dehydrated alcohol with the balanced mix solution mixing system of two dodecyl dimethyl ammonium chloride dispersion agents, and the shared mass percent of polycrystalline silica flour is 0.001～1% in the suspension.
2). adopt the method for spraying or dipping that suspension is coated on the ceramic substrate.
3). the ceramic substrate that will scribble suspension is at 400-600 ℃, and under the argon shield of 12L/min behind the thermal treatment 25-45min, thermal treatment 15-30min under 900-1100 ℃ temperature is so that form more firm combining between polycrysalline silcon and substrate.
4). the substrate after will handling through (3) is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 60-160sccm, H
2Flow velocity is 0.05-0.50sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 15 microns at 1000-1150 ℃ condition deposit 20min.Only lifting following two examples according to the aforesaid method step is further specified the present invention.
Embodiment 1
With median size is that 0.5 micron monocrystalline silica flour and organic liquid is mixed and made into suspension, and the shared mass percent of the polycrystalline silica flour of silica flour is 5 ‰ in the suspension.Ceramic substrate is flooded in suspension about 5min, from suspension, take out ceramic substrate and place atmosphere furnace under argon shield, 450 ℃ heat-treat 30min, 1000 ℃ of left and right sides thermal treatment 30min then.Substrate after handling is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 100sccm, H
2Flow velocity is 0.1sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 15 microns at 1050 ℃ condition deposit 20min.
Embodiment 2
With median size is that 1 micron monocrystalline silica flour and organic liquid is mixed and made into suspension, and the shared mass percent of the polycrystalline silica flour of silica flour is 8 ‰ in the suspension.Ceramic substrate is flooded in suspension about 5min, from suspension, take out ceramic substrate and place atmosphere furnace under argon shield, 450 ℃ heat-treat 30min, 1000 ℃ of left and right sides thermal treatment 30min then.Substrate after handling is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 160sccm, H
2Flow velocity is 0.50sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 20 microns at 1050 ℃ condition deposit 20min.
Claims (3)
1. the method for a deposition large grain size polysilicon film on ceramic substrate, this method are earlier behind ceramic substrate surface plantation seed crystal, adopt the RTCVD deposition technique to prepare large grain size polysilicon film, and it is characterized in that: this method may further comprise the steps:
1). the monocrystalline silica flour of granularity 0.5-2 micron is become suspension with dehydrated alcohol with the balanced mix solution mixing system of two dodecyl dimethyl ammonium chloride dispersion agents, and the shared mass percent of polycrystalline silica flour is 0.001～1% in the suspension;
2). adopt the method for spraying or dipping that suspension is coated on the ceramic substrate;
3). the ceramic substrate that will scribble suspension is at 400-600 ℃, and under the argon shield of 12L/min behind the thermal treatment 25-45min, thermal treatment 15-30min under 900-1100 ℃ temperature is so that form more firm combining between polycrysalline silcon and substrate;
4). the substrate after will handling through (3) is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 60-160sccm, H
2Flow velocity is 0.05-0.50sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 15 microns at 1050 ℃ condition deposit 20min.
2. according to the described method that deposits large grain size polysilicon film on ceramic substrate of claim 1, it is characterized in that: described ceramic substrate is meant Al
2O
3Ceramic substrate, SiO
2Ceramic substrate, mullite ceramic substrate, SiC ceramic substrate or Si
3N
4Ceramic substrate.
3. according to the described method that deposits large grain size polysilicon film on ceramic substrate of claim 1, it is characterized in that: described organic liquid is the balanced mix solution of dehydrated alcohol and two dodecyl dimethyl ammonium chloride dispersion agents.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310117094 CN1279221C (en) | 2003-12-09 | 2003-12-09 | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310117094 CN1279221C (en) | 2003-12-09 | 2003-12-09 | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1546740A true CN1546740A (en) | 2004-11-17 |
| CN1279221C CN1279221C (en) | 2006-10-11 |
Family
ID=34337694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310117094 Expired - Fee Related CN1279221C (en) | 2003-12-09 | 2003-12-09 | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1279221C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101565185A (en) * | 2008-04-23 | 2009-10-28 | 信越化学工业株式会社 | Method of manufacturing polycrystalline silicon rod |
| CN101764177B (en) * | 2009-04-17 | 2011-04-06 | 南安市三晶阳光电力有限公司 | Preparation method for silicon-based solar energy thin film |
-
2003
- 2003-12-09 CN CN 200310117094 patent/CN1279221C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101565185A (en) * | 2008-04-23 | 2009-10-28 | 信越化学工业株式会社 | Method of manufacturing polycrystalline silicon rod |
| CN101565185B (en) * | 2008-04-23 | 2012-09-26 | 信越化学工业株式会社 | Method of manufacturing polycrystalline silicon rod |
| CN101764177B (en) * | 2009-04-17 | 2011-04-06 | 南安市三晶阳光电力有限公司 | Preparation method for silicon-based solar energy thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1279221C (en) | 2006-10-11 |
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