CN1279221C - Method of depositing big grain polycrystalline silicon thin film on ceramic substrate - Google Patents
Method of depositing big grain polycrystalline silicon thin film on ceramic substrate Download PDFInfo
- Publication number
- CN1279221C CN1279221C CN 200310117094 CN200310117094A CN1279221C CN 1279221 C CN1279221 C CN 1279221C CN 200310117094 CN200310117094 CN 200310117094 CN 200310117094 A CN200310117094 A CN 200310117094A CN 1279221 C CN1279221 C CN 1279221C
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- suspension
- substrate
- polysilicon film
- grain size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 238000000151 deposition Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000725 suspension Substances 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 235000013339 cereals Nutrition 0.000 claims description 12
- 235000013312 flour Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000007669 thermal treatment Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- PGQAXGHQYGXVDC-UHFFFAOYSA-N dodecyl(dimethyl)azanium;chloride Chemical compound Cl.CCCCCCCCCCCCN(C)C PGQAXGHQYGXVDC-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052863 mullite Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a method for depositing large crystal grains of polycrystalline silicon thin films on a ceramic substrate, which belongs to the preparation technique for solar battery parts and has simple process and high efficiency. Single-crystal silicon is pulverized into grains; seed crystal of certain definitely is firstly grown on the surface of a ceramic substrate; then RTCVD deposition technique is adopt to prepare the polycrystalline silicon films with large crystal grains.
Description
Technical field
The invention belongs to solar cell component technology of preparing, particularly simple, the effective a kind of method that on ceramic substrate, deposits large grain size polysilicon film of technology.
Background technology
The deposition large grain size polysilicon film is to prepare the critical process of ceramic substrate multi-crystal silicon film solar battery efficiently.But adopt present depositing operation to be difficult in the polysilicon membrane that directly deposits big crystal grain on the ceramic substrate.In order on ceramic substrate, to prepare large grain size polysilicon film, usually the method for taking is to deposit the less silicon film of crystal grain with the CVD technology on substrate earlier, adopt zone melting recrystallization (ZMR) technology to increase grain-size then, but this method has increased several processing steps, and production cost is increased substantially.Therefore find a kind of method of deposition large grain size polysilicon film of simple possible that the development and application of ceramic substrate multi-crystal silicon film solar battery is cheaply had great importance.
Summary of the invention
The object of the present invention is to provide a kind of method that on ceramic substrate, deposits large grain size polysilicon film; This method is earlier behind ceramic substrate surface plantation seed crystal, adopts the RTCVD deposition technique to prepare large grain size polysilicon film, and it is characterized in that: this method may further comprise the steps:
1) the polycrystalline silica flour of granularity 0.5-2 micron is become suspension with balanced mix solution mixing system with dehydrated alcohol and two dodecyl dimethyl ammonium chloride dispersion agents, the shared mass percent of polycrystalline silica flour is 0.001～1% in the suspension;
2) adopt the method for spraying or dipping that suspension is coated on the ceramic substrate;
3) ceramic substrate that will scribble suspension is at 400-600 ℃, and flow velocity is under the argon shield of 12L/min behind the thermal treatment 25-45min, and thermal treatment 15-30min under 900-1100 ℃ temperature is so that form more firm combining between polycrysalline silcon and substrate;
4) substrate after will handling through (3) is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 60-160sccm, H
2Flow velocity is 0.05-0.50sccm, and pressure is 40Torr, promptly obtains the polysilicon membrane of grain-size about 15 microns at 1050 ℃ condition deposit 20min.
Described ceramic substrate is meant Al
2O
3Ceramic substrate, SiO
2Ceramic substrate, mullite ceramic substrate, SiC ceramic substrate or Si
3N
4Ceramic substrate.
The invention has the beneficial effects as follows that processing step is simple, production cost is reduced significantly, the development and application of ceramic substrate multi-crystal silicon film solar battery is cheaply had great importance.
Embodiment
The present invention is a kind of method that deposits large grain size polysilicon film on ceramic substrate.This method is to pass through earlier to adopt the RTCVD deposition technique to prepare large grain size polysilicon film behind the certain density seed crystal of ceramic substrate surface plantation.This method may further comprise the steps successively:
1) with the polycrystalline silica flour of granularity 0.5-2 micron with become suspension with dehydrated alcohol with the balanced mix solution mixing system of two dodecyl dimethyl ammonium chloride dispersion agents, the shared mass percent of polycrystalline silica flour is 0.001～1% in the suspension.
2) adopt the method for spraying or dipping that suspension is coated on the ceramic substrate.
3) ceramic substrate that will scribble suspension is at 400-600 ℃, and under the argon shield of 12L/min behind the thermal treatment 25-45min, thermal treatment 15-30min under 900-1100 ℃ temperature is so that form more firm combining between polycrysalline silcon and substrate.
4) substrate after will handling through step 3) is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 60-160sccm, H
2Flow velocity is 0.05-0.50sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 15 microns at 1000-1150 ℃ condition deposit 20min.
Only lifting following two examples according to the aforesaid method step is further specified the present invention.
Embodiment 1
Being 0.5 micron polycrystalline silica flour with median size becomes suspension with balanced mix solution mixing system with dehydrated alcohol and two dodecyl dimethyl ammonium chloride dispersion agents, and the shared mass percent of the polycrystalline silica flour of silica flour is 5 ‰ in the suspension.Ceramic substrate is flooded in suspension about 5min, from suspension, take out ceramic substrate and place atmosphere furnace under argon shield, 450 ℃ heat-treat 30min, 1000 ℃ of left and right sides thermal treatment 30min then.Substrate after handling is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 100sccm, H
2Flow velocity is 0.1sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 15 microns at 1050 ℃ condition deposit 20min.
Embodiment 2
Being 1 micron polycrystalline silica flour with median size becomes suspension with balanced mix solution mixing system with dehydrated alcohol and two dodecyl dimethyl ammonium chloride dispersion agents, and the shared mass percent of the polycrystalline silica flour of silica flour is 8 ‰ in the suspension.Ceramic substrate is flooded in suspension about 5min, from suspension, take out ceramic substrate and place atmosphere furnace under argon shield, 450 ℃ heat-treat 30min, 1000 ℃ of left and right sides thermal treatment 30min then.Substrate after handling is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 160sccm, H
2Flow velocity is 0.50sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 20 microns at 1050 ℃ condition deposit 20min.
Claims (2)
1. the method for a deposition large grain size polysilicon film on ceramic substrate, this method are earlier behind ceramic substrate surface plantation seed crystal, adopt the RTCVD deposition technique to prepare large grain size polysilicon film, and it is characterized in that: this method may further comprise the steps:
1) the polycrystalline silica flour with granularity 0.5-2 micron becomes suspension with dehydrated alcohol with the balanced mix solution mixing system of two dodecyl dimethyl ammonium chloride dispersion agents, and the shared mass percent of polycrystalline silica flour is 0.001～1% in the suspension:
2) adopt the method for spraying or dipping that suspension is coated on the ceramic substrate;
3) ceramic substrate that will scribble suspension is at 400-600 ℃, and under the argon shield of 12L/min behind the thermal treatment 25-45min, thermal treatment 15-30min under 900-1100 ℃ temperature is so that form more firm combining between polycrysalline silcon and substrate;
4) substrate after will handling through step 3) is packed in the RTCVD reaction chamber, with SiH
2Cl
2/ H
2Be source of the gas, SiH
2Cl
2Flow velocity is 60-160sccm, H
2Flow velocity is 0.05-0.50sccm, and pressure is 40Torr, can obtain the polysilicon membrane of grain-size about 15 microns at 1050 ℃ condition deposit 20min.
2. according to the described method that on ceramic substrate, deposits large grain size polysilicon film of claim 1, it is characterized in that: described. ceramic substrate is meant Al
2O
3Ceramic substrate, SiO
2Ceramic substrate, mullite ceramic substrate, SiC ceramic substrate or Si
3N
4Ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310117094 CN1279221C (en) | 2003-12-09 | 2003-12-09 | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310117094 CN1279221C (en) | 2003-12-09 | 2003-12-09 | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1546740A CN1546740A (en) | 2004-11-17 |
| CN1279221C true CN1279221C (en) | 2006-10-11 |
Family
ID=34337694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310117094 Expired - Fee Related CN1279221C (en) | 2003-12-09 | 2003-12-09 | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1279221C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5137670B2 (en) * | 2008-04-23 | 2013-02-06 | 信越化学工業株式会社 | Method for producing polycrystalline silicon rod |
| CN101764177B (en) * | 2009-04-17 | 2011-04-06 | 南安市三晶阳光电力有限公司 | Preparation method for silicon-based solar energy thin film |
-
2003
- 2003-12-09 CN CN 200310117094 patent/CN1279221C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1546740A (en) | 2004-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101415865B (en) | For the cluster that epitaxial film is formed | |
| RU2438211C2 (en) | Method of producing silicon film on substrate surface by vapour deposition | |
| WO2006070799A1 (en) | METHOD FOR PRODUCING ZnO-BASED TRANSPARENT ELECTROCONDUCTIVE FILM BY MOCVD (METAL ORGANIC CHEMICAL VAPOR DEPOSITION) METHOD | |
| CN105731825B (en) | A method of preparing aluminium nitride film using Graphene glass low-cost large-area | |
| US4582560A (en) | In situ production of silicon crystals on substrate for use in solar cell construction | |
| JPH08310900A (en) | Thin-film single crystal of nitride and its production | |
| CN1279221C (en) | Method of depositing big grain polycrystalline silicon thin film on ceramic substrate | |
| CN117133638A (en) | Hexagonal boron nitride growing aluminum nitride film and preparation method and application thereof | |
| CN102249553A (en) | Preparation method of polycrystalline silicon film | |
| CN117403319A (en) | Method for preparing monocrystalline silicon carbide crystal for chip from alkylsilane | |
| CN116259534B (en) | Silicon carbide epitaxy method | |
| CN106086813B (en) | A kind of mobile phone faceplate multicoating layer and preparation method thereof | |
| CN105112995A (en) | Compound separated carbon coating used for polysilicon ingot furnace, preparation method, graphite plate and polysilicon ingot furnace | |
| CN111410191A (en) | Graphene semiconductor preparation device and method | |
| CN102255006A (en) | Preparation method of thick film solar cell | |
| CN101764178B (en) | Preparation method for silicon-based solar energy thin film | |
| CN103928291B (en) | The ameliorative way of semiconductor surface resistance homogeneity | |
| CN108728895A (en) | A kind of quasi-monocrystalline silicon crucible for casting ingots using silicon nitride film as barrier layer | |
| KR101267424B1 (en) | Preparing method of free-standing silicon film using substrate surface treatment process | |
| CN108155562B (en) | Preparation method of aluminum and phosphorus co-doped silicon nanocrystal | |
| CN102206811B (en) | InGaN film with small band gap and preparation method thereof | |
| JPH1154433A (en) | Method for forming silicon film | |
| CN101764177B (en) | Preparation method for silicon-based solar energy thin film | |
| JPS6021518A (en) | Vapor growth method of iii-v group compound semiconductor | |
| CN104919094A (en) | Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: LIAONING NANGUANG ENERGY-SAVING TECHNOLOGY CO. LTD Free format text: FORMER OWNER: TSINGHUA UNIVERSITY Effective date: 20100730 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100084 MAILBOX 100084-82, BEIJING CITY TO: 112000 WENZHUANGZI DIVISION, ECONOMIC DEVELOPMENT ZONE, TIELING CITY, LIAONING PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20100730 Address after: 112000 Liaoning Province, Tieling City Economic Development Zone Chuang-tzu temperature field Patentee after: Liaoning Nanguang Energy Technology Co. Ltd. Address before: 100084 Beijing 100084-82 mailbox Patentee before: Tsinghua University |
|
| DD01 | Delivery of document by public notice |
Addressee: Jia Dehui Document name: Notification of Passing Examination on Formalities |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061011 Termination date: 20161209 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |