CN103928291B - The ameliorative way of semiconductor surface resistance homogeneity - Google Patents
The ameliorative way of semiconductor surface resistance homogeneity Download PDFInfo
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- CN103928291B CN103928291B CN201310011518.0A CN201310011518A CN103928291B CN 103928291 B CN103928291 B CN 103928291B CN 201310011518 A CN201310011518 A CN 201310011518A CN 103928291 B CN103928291 B CN 103928291B
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- Prior art keywords
- edge
- resistance
- semiconductor
- surface resistance
- purge gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention discloses a kind of ameliorative way of semiconductor surface resistance homogeneity, one MOCVD device is provided, the MOCVD device includes a heater, the edge of the heater is formed with a circle stomata, purge gas flow to the edge of semiconductor by the stomata along the direction of vertical substrate, by the thickness for controlling the flow of the purge gas to change edge semiconductor film forming, reduce the resistance difference between semiconducting central resistance and edge resistance.The present invention can effectively control the size of edge semiconductor resistance by the thickness of directly change edge semiconductor film forming, greatly reduce the resistance difference of edge semiconductor and centre, realize the optimization of resistance homogeneity.
Description
Technical field
The invention belongs to field of semiconductor manufacture, more particularly to a kind of ameliorative way of semiconductor surface resistance homogeneity.
Background technology
Metallorganic chemical vapor deposition (Metal-organic Chemical Vapor Deposition),
Abbreviation MOCVD, is nearly technology of preparing for thin-film material for growing up for 30 years, and it belongs to chemical method, is CVD method
One kind, be the chemical gaseous phase depositing process with metallorganic as source.For preparing during film also known as metal organic-matter chemical
Vapor phase epitaxial growth（MOVPE）.MOCVD technologies are H.M.Manasevit by Rockwell International of the U.S. etc. first in nineteen sixty-eight
A kind of method of the prepare compound thin layer single crystal film for first proposing, the technology be using III, II race element organic compound and
V races, hydride of VI races element etc., with pyrolysis in the enterprising promoting the circulation of qi phase epitaxy of substrate, grow as growth source material
The thin layer monocrystalline of iii-v, II-VI group compound semiconductor and their multivariate solid solution.
MOCVD methods prepare film, are that the metallo-organic compound that will be diluted in carrier gas is imported in reactor, are being added
Decomposed, aoxidized or reduce etc. on the substrate of heat and reacted, the product of reaction is deposited on substrate so as to form the one of film
The technology of kind.
Under prior art conditions, MOCVD cavitys, can becoming according to resistance after sheet resistance uniformity exceeds setting value
Gesture figure adjusts the biography sheet data of cavity so that resistance trend figure concentrically circle distribution, then by adjusting heater and chip
The parameter such as spacing, C0 optimize uniformity.But concentrically justify in resistance trend figure, and wafer edges resistance and center
In the case of larger, prior art is difficult to do better uniformity resistance difference, and Adjustment effect is excessively poor, changes almost without any
It is kind.
In view of this, it is necessary to provide a kind of method, improving the uniformity of semiconductor surface resistance.
The content of the invention
Present invention solves the technical problem that being to provide a kind of ameliorative way of semiconductor surface resistance homogeneity.
To achieve the above object, the present invention provides following technical scheme：
The invention discloses a kind of ameliorative way of semiconductor surface resistance homogeneity, wherein, by changing edge semiconductor
The thickness of film forming, to reduce the resistance difference between semiconducting central resistance and edge resistance.
The invention also discloses a kind of ameliorative way of semiconductor surface resistance homogeneity, wherein, there is provided a MOCVD device,
The MOCVD device includes a heater, and the edge of the heater is formed with a circle stomata, and purge gas pass through the stomata edge
The direction of vertical substrate flows to the edge of semiconductor, and edge semiconductor film forming is changed by controlling the flow of the purge gas
Thickness, reduce the resistance difference between semiconducting central resistance and edge resistance.
As a further improvement on the present invention, the value of quality controller coefficient factor is adjusted to control the stream of purge gas
Amount, the value of the quality controller coefficient factor is 0.8 ~ 1.2.
As a further improvement on the present invention, the purge gas are N2。
Compared with prior art, the beneficial effects of the present invention are：
（1）Directly change the thickness of edge semiconductor film forming, can effectively control the size of edge semiconductor resistance, significantly
Reduce the resistance difference of edge semiconductor and centre, realize the optimization of resistance homogeneity.
（2）The value of quality controller coefficient factor is adjusted in the range of 0.8 ~ 1.2, will not cause shadow to heater
Ring.
Brief description of the drawings
In order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is shown when quality controller coefficient factor is 1.00, the trend distribution map of semiconductor surface resistance homogeneity；
Fig. 2 is shown when quality controller coefficient factor is 0.8, the distribution map of semiconductor surface resistance homogeneity；
Fig. 3 is shown when quality controller coefficient factor is 1.2, the distribution map of semiconductor surface resistance homogeneity.
Specific embodiment
Because the source that MOCVD growths are used is material inflammable, explosive, that toxicity is very big, and to grow multicomponent, big face
Product, thin layer and superthin layer dissimilar materials, therefore in the design philosophy of MOCVD systems, generally to consider that system sealing will get well,
Flow, temperature control are accurate, and component conversion is rapid, and system wants compact etc..In general, MOCVD device is by source gas
The composition such as processing system, reative cell and heating system, vent gas treatment and control system.
High-frequency induction heating being used the heating system of MOCVD, minority is radiant heating, is typically necessary heater more.Type
Number heater used by HP+TxZ, its edge is provided with a circle stomata, and the stomata is purge gas such as N2Gas outlet, its use
In the edge ring of cleaning semiconductor.Inventor has found that the gas flow size is to edge semiconductor film forming in actual production
Influence is very big, can directly affect resistance homogeneity.By adjusting quality controller coefficient factor（MFC factor）Numerical value increases
Flow that is big or reducing purge gas, can effectively change edge semiconductor resistance, so as to improve surface resistance uniformity.
Based on above-mentioned discovery, the embodiment of the invention discloses a kind of ameliorative way of semiconductor surface resistance homogeneity, pass through
Change the thickness of edge semiconductor film forming, to reduce the resistance difference between semiconducting central resistance and edge resistance.
The embodiment of the invention also discloses a kind of ameliorative way of semiconductor surface resistance homogeneity, there is provided a MOCVD device,
The MOCVD device includes a heater, and the edge of the heater is formed with a circle stomata, and purge gas pass through the stomata edge
The direction of vertical substrate flows to the edge of semiconductor, and edge semiconductor film forming is changed by controlling the flow of the purge gas
Thickness, reduce the resistance difference between semiconducting central resistance and edge resistance.
Directly change the thickness of edge semiconductor film forming, can effectively control the size of edge semiconductor resistance, subtract significantly
Small edge semiconductor and the resistance difference in centre, realize the optimization of resistance homogeneity.
Preferably, by the flow for adjusting the value of quality controller coefficient factor to control purge gas, quality controller
The value of coefficient factor is 0.8 ~ 1.2.
After the completion of a maintenance period, we are checked heater, and still light is such as new to find heater edge,
Illustrate, when quality controller coefficient factor is in 0.8 ~ 1.2 directly regulation, heater will not be impacted.
Preferably, the purge gas are N2。
Below in conjunction with the accompanying drawing in the embodiment of the present invention, detailed retouching is carried out to the technical scheme in the embodiment of the present invention
State, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on the present invention
In embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
Fig. 1 is shown when the value of quality controller coefficient factor is respectively 1.00, the MAP of semiconductor surface resistance homogeneity
Distribution map.
As shown in Figure 1, the uniformity for obtaining semiconductor surface resistance is 9.83%.
Fig. 2 is shown when the value of quality controller coefficient factor is respectively 0.8, the trend of semiconductor surface resistance homogeneity
Distribution map.
As shown in Figure 2, the uniformity for obtaining semiconductor surface resistance is 14.1%.
Fig. 3 is shown when the value of quality controller coefficient factor is respectively 1.2, the trend of semiconductor surface resistance homogeneity
Distribution map.
From the figure 3, it may be seen that the uniformity of obtained semiconductor surface resistance is 7.07%.
The change that experimental data from Fig. 1 to Fig. 3 can be seen that quality controller coefficient factor value changes to resistance homogeneity
Become larger.By resistance trend figure distribution situation, we are also found that the adjustment of quality controller coefficient factor value, half-and-half lead
The resistance at body edge has a great impact, and when quality controller coefficient factor increases, resistance diminishes, when quality controller coefficient
The factor becomes hour, resistance increase.By this rule, can be adjusted to edge semiconductor resistance and central part split-phase by we
Closely, so as to be effectively improved uniformity.
In sum, the beneficial effects of the present invention are：
（1）Directly change the thickness of edge semiconductor film forming, can effectively control the size of edge semiconductor resistance, significantly
Reduce the resistance difference of edge semiconductor and centre, realize the optimization of resistance homogeneity.
（2）The value of quality controller coefficient factor is adjusted in the range of 0.8 ~ 1.2, will not cause shadow to heater
Ring.
（3）Reduce because resistance homogeneity it is bad caused by begin to speak again safeguard, save operation expenses and manpower
Resource.
（4）Improve reaction cavity can the production time, increase board output.
The explanation of above example is only intended to help and understands the method for the present invention and its core concept.It should be pointed out that right
For those skilled in the art, under the premise without departing from the principles of the invention, the present invention can also be carried out
Some improvement and modification, these are improved and modification is also fallen into the protection domain of the claims in the present invention.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (2)
1. a kind of ameliorative way of semiconductor surface resistance homogeneity, it is characterised in that：A MOCVD device is provided, the MOCVD device
Including a heater, the edge of the heater is formed with a circle stomata, and purge gas are by the stomata along vertical substrate
Direction flows to the edge of semiconductor, by the thickness for controlling the flow of the purge gas to change edge semiconductor film forming, subtracts
Surface resistance between small semiconductor median plane resistance and edge surface resistance is poor；
The value of quality controller coefficient factor is adjusted to control the flow of purge gas, when the increase of quality controller coefficient factor
When, the surface resistance of edge semiconductor diminishes, and when quality controller coefficient factor becomes hour, the surface resistance of edge semiconductor increases,
The value of the quality controller coefficient factor is 0.8~1.2.
2. the ameliorative way of semiconductor surface resistance homogeneity according to claim 1, it is characterised in that：The purge gas
It is N2。
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| CN201310011518.0A CN103928291B (en) | 2013-01-11 | 2013-01-11 | The ameliorative way of semiconductor surface resistance homogeneity |
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| CN201310011518.0A CN103928291B (en) | 2013-01-11 | 2013-01-11 | The ameliorative way of semiconductor surface resistance homogeneity |
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| CN103928291A CN103928291A (en) | 2014-07-16 |
| CN103928291B true CN103928291B (en) | 2017-06-13 |
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| US6365495B2 (en) * | 1994-11-14 | 2002-04-02 | Applied Materials, Inc. | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
| US6375748B1 (en) * | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
| JP2002141290A (en) * | 2000-11-06 | 2002-05-17 | Hitachi Ltd | System for producing semiconductor |
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