CN1545568A

CN1545568A - Topologically tailored sputtering targets

Info

Publication number: CN1545568A
Application number: CNA028051696A
Authority: CN
Inventors: E・李; E·李
Original assignee: Honeywell International Inc
Current assignee: Honeywell International Inc
Priority date: 2001-02-20
Filing date: 2002-02-20
Publication date: 2004-11-10
Also published as: EP1370708A1; KR20030077633A; WO2003000950A1; CA2433033A1; JP2004531648A

Abstract

In a standard target configuration, sputtered atoms distribute in a wide angle producing a non-uniform film and poor step coverage, mainly because the flux of sputtered atoms are not collimated and the center region of the wafer (220) experiences a higher flux of sputtered atoms than the edge of the wafer. Sputtering targets (210) described herein are topologically and morphologically tailored such that sputtered atoms impinge directly toward a wafer in a narrow cosine distribution. In effect, the target is designed with a built-in collimator. The desired morphology and topography can be accomplished by micro (e.g., parabolic dimples) (250) and/or macro scale (e.g., wafer contour, circular wave contour) modification of the target geometry and topography. The atoms/ions travel along a path (230) from the surface material (260), which is coupled, to the core material (270).

Description

The sputtering target of special topological structure

Invention field

Field of the present invention is the sputtering target for the usefulness of physical vapor deposit (PVD).

Background of invention

Electronics and semiconductor subassembly are applied in industrial consumption electronic product, communication products and the data exchange product that quantity increases day by day.The example of some these industrial consuming product is televisor, computer, mobile telephone, scheduler, hand held manager, can takes wireless, car stereo or telepilot.Along with increase, also require those same products to become littler and be more convenient for human consumer and commercial activity are carried to these industrial consumption electronic product demands.

Because the size of these products is dwindled, the assembly that constitutes this product also must become littler and/or thinner.Some these sizes need be dwindled or the example of scaled assembly is microelectronic chip interconnection, semiconductor chip assembly, resistance, electric capacity, printed wiring or plugboard, wiring, keyboard, touch panel and Chip Packaging.

When dwindling or during the size of scaled electronics and half will body assembly, any defective that is present in the big assembly will be exaggerated in scaled assembly.Therefore, if possible, should be in the size of scaled assembly with before being used for less electronic product, discriminated union is proofreaied and correct in big assembly and is had the defective that maybe may exist.

For the defective in discriminated union correcting electronic, semi-conductor and the communications component, reply assembly, used material and the manufacture method that makes this this assembly are done rupture test and are analyzed.Constitute by the material interlayer under electronics, semi-conductor and communicate by letter/some situation of data exchange assembly, such as metal, metal alloy, pottery, inorganic materials, polymkeric substance or organo metallic material.This material interlayer often very thin (thickness is less than tens dust magnitudes).In order to improve the attribute of material interlayer, reply forms the method for this interlayer to be judged such as the physical vapor deposit of metal or other compounds, and might be improved.

In typical physical vapor deposit (PVD) method, bombard sample or target with the energy such as plasma body, laser or ionic fluid, disengage atmosphere around entering until atom.Shift to the surface of a substrate (being generally silicon wafer) and, form a film or layer of material from the atom that this sputtering target disengaged this surface coverage.Because the cosine distribution of sputtered atom, so standard P VD target configuration tends to produce the deposit of " center is thick " and " edge is thin ".(seeing prior art Fig. 1 and US 5,302,266, US 5,225,393, US 4,026,787 and US 3,884,787).Prior art Fig. 1 shows that a conventional PVD configuration comprises a sputtering target 10 and a disk or substrate 20.Atom disengages and shifts to disk or substrate 20, their deposit stratification here along ions/atoms passage 30 from sputtering target 10.

For deposit even metal film more, proposed Several Methods and device and proofreaied and correct the big cosine distribution of sputtered atom.A kind of method in common is, between the surface of this target and disk or substrate in fact by adorning a discrete collimator or similar fenestra.(see prior art Fig. 2 and US5,409,587; US 4,923, and 585).Collimator is that design reduces the quantity with the atoms metal of wide-angle bump substrate or disk, allow this atoms metal current and be deposited on substrate or the disk simultaneously with smaller angle, its reduce since contact with by in its vertical gathering and increase owing to contact or by dropping on bottom it and the share of the atom of sidewall.Prior art Fig. 2 shows that one comprises the device of sputtering target 110, disk or substrate 120 and discrete collimator 140.Atom disengages and moves to disk or substrate 120 along ions/atoms passage 130 from sputtering target 110, and this atom is via collimator 140 screenings herein.Atom by collimator 140 is from laminar deposition in disk or on the substrate 120.

But, one collimator is added to target/substrate combination increase the consumption of target material widely, and shorten life-span of target, because be not to be deposited on the disk but to be deposited on the collimator, so in this process, in fact be not fully utilized with the atom of wide-angle operation.And, add collimator than (no collimator) method of standard require bigger target to disk at interval, to hold this collimator and prevent that collimator shape pattern from forming on this disk.In addition, the scattering atom that is deposited on the collimator tends to block this collimator, further reduce the efficient of deposit and when deposit is peeled off collimator surface, usually cause the formation of the particulate of not wishing.

The another kind of method of attempting to produce more even deposit is to make sputtered atom ionization (ionized metal plasma body (IMP) method) by its plasma body being applied radio frequency (RF) power.(seeing US 6,296,743).By this method, because electronics has higher movability with respect to heavier ion, the surface that all exposes in the RF plasma body all produces the negative potential with respect to this plasma body.Therefore, need not the bias voltage on bearing or surface, the bias voltage of this direct current (DC) itself just is attracted to metal ion the surface of disk.The metal ion of these vertical shifting is usually by contact or by clashing into the fraction of coverage of its bottom and improvement bottom and sidewall.But this RF plasma device and operational conditions become one of reason that system cost and Operating Complexity increase greatly.The RF plasma body is constructed different magnet combinations, shifts to the passage of substrate or disk with further adjusting atom, yet these methods are may costs too high and be difficult to handle and monitoring.(see US6,153,061; US 6,326, and 627; US 6,117, and 281; US 5,865, and 969; US5,766,426; US 5,417, and 833; US 5,188, and 717; US 5,135, and 819; US5,126,029; US 5,106, and 821; US 4,500, and 409; US 4,414, and 086; US4,610,770 and US 4,629,548).

Improving sputter procedure proposes with the additive method that forms more even film.For example, Honeywell electronic material company (HEM) confirms, can pass through to use by waiting passage inclination extrusion molding (ECAE ^) method (5,590,389; 5,780,755 and 5,809,393) patented technology prepared ultra-fine grain granularity target and improve the sputter characteristic of target widely.Its benefit that demonstrates comprises low puncture, long target life-span, high device productive rate, better film uniformity coefficient and few shot.Honeywell electronic material company confirms that also the crystallographic texture of this target can be revised by the mode that does not form pattern, is beneficial to collimation.(see US 5,993,621 and US 6,302,977).Self-ionized plasma body (SIP) has also been regarded a kind of sputtering method that can form more even film as.This method utilizes low pressure and superpower to promote the autoionizationization of sputtering target atom.The target that SIP requires to widen is to dice spaced, and this just forms long ionic channel.This long ionic channel improves the directivity of house flux but reduces the productive rate of this target.The prolongation of ionic channel causes cosine losses further to increase and makes the utilization of target very insufficient.The method that has again comprises: mechanically regulate disk or substrate (US 6,224,718) in sputter procedure; Mask its surperficial part (US5,894,058; US 5,942, and 356; US 6,242, and 138); To the steam between target and substrate or the disk do chemical treatment (US 6,057,238; US 6,107, and 688; US 4,793, and 908; US 6,222,271 and US 6,194,783) and the laser splash of atom and excite (US5,382,457).Except that the ECAE method, other method all requires this basic PVD method and device to increase extra machinery or chemical ingredients, and this may increase the cost and the complicacy of these apparatus and method.

For this reason, preferably make a PVD target and target/disk device, so that a) utilize its favourable least depth structure; B) make the total cost of this method keep lower and c with respect to traditional PVD method) allow the instrument measurement device to keep succinctly with respect to traditional PVD method.

Summary of the invention

The direction of the weathering process hint sputtered atom of standard target can be controlled by configuration of surface or the topological framework of revising target.In standard target structure, the atom of sputter distributes with wide-angle and forms uneven film, mainly is because higher sputtered atom flux is stood than the edge of disk in this disk central section.

Sputtering target described here is special in addition on topological framework and form, makes sputtered atom directly hit disk with narrow cosine distribution.In fact in this target design collimator is housed.Desirable construction profile can be by reaching geometric micro-scale of this target (as parabolic indenture) and/or macro-scale (as the target surface profile) correction.

The autocollimation sputtering target can have arbitrary suitable shape and size, depends on its purposes and is used for the metrical instrument of this PVD method and parts which kind of can sputter in sputtering chamber.Sputtering target as described herein also comprises surfacing and core material, wherein surfacing is coupled to core material.Surfacing and core material be by often can comprising identical element composition or chemical ingredients/component, otherwise can make the elemental composition of surfacing and chemical ingredients change or change to elemental composition and the chemical ingredients that is different from core material.And, a base plate can be coupled to core material sputtering target provided other support and to provide a stationary installation to this sputtering target.

Described surfacing is to survey that part of target that time point is exposed to the energy arbitrary, and also is to desire to be used for producing that part of entire target material of hope as the atom of overlay coating.Say that again this surfacing is exactly to comprise at least two that part of sputtering targets that constitute the indenture of having a mind to make of collimator shape or morphology.

The method that constitutes the autocollimation sputtering target is: a core material a) is provided; B) provide a surfacing; C) core material is coupled to surfacing to form a sputtering target; D) make at least two indentures of having a mind to, wherein this indenture constitutes the profile of a collimation.

Formation uniform films or layer promptly for the method that makes a kind of assembly are on assembly surface: an autocollimation sputtering target a) is provided; B) provide a surface; C) placing this surface apart from this autocollimation sputtering target one segment distance place; D) bombard this autocollimation sputtering target to produce at least a atom and e with an energy) plate this surface with this at least a atom.

Sputtering target described here can be attached to production, makes or change alternatively any method of electronics, semi-conductor and communications component or produce in the design.Electronics, semi-conductor and communications component are believed to comprise any assembly that layer is arranged usually, and it can be used for the product based on electronics, semi-conductor or communication.Assembly described here comprise semi-conductor chip, circuit card, Chip Packaging, separate sheet, circuit card insulating element, the printing plugboard, touch panel, waveguide, fibre optics is with photon transmission and sonic transmissions assembly, any use or combine the prepared material of dual damascene method and other circuit board assemblies, as electrical condenser, inducer and resistor.

The accompanying drawing summary

Prior art Fig. 1 shows a conventional PVD target/surface configuration.

Prior art Fig. 2 shows that one has the conventional PVD target/surface configuration of the discrete collimator that is added in this device.

Fig. 3 illustrates one embodiment of the invention.

Fig. 4 graphic extension several embodiments of the present invention.

Fig. 5 provides the method for a kind of imagination that constitutes the autocollimation sputtering target.

Fig. 6 provides the method for a kind of imagination that forms uniform films from the teeth outwards.

Detailed Description Of The Invention

The weathering process hint of target, the direction of sputtered atom can be controlled by the configuration of surface or the profile that change target.In standard target structure, sputtered atom distributes with wide-angle and forms uneven film, mainly is because higher sputtered atom flux is stood than the edge of this disk in the central section of this disk, and is as shown in prior art figure 1.Now, the direction of sputtered atom just can be controlled by the configuration of surface and the profile that change target.Specifically, can process, make sputtered atom directly hit a disk, as shown in Figure 3 with narrow cosine distribution to the configuration of surface and the profile of a target.

Fig. 3 provides the PVD configuration of an imagination, comprises sputtering target 210 and disk or substrate 220.Sputtering target 210 comprises surfacing 260 and core material 270.Surfacing 260 has the indenture (being nick trace 250 in this case) of deliberately making.These indentures of having a mind to make also form on this sputtering target as pattern.Just as used herein, term " pattern " expression is had a mind to the indenture of making any and is duplicated, handles or not only duplicated but also handled appearance.Atom is that by nick trace 250 prescreens of establishing the collimator effect in plaing they are bombarded in such a way, makes them be controlled in a certain ions/atoms passage when disengaging and shifts out.So this atom disengages and shifts to disk or substrate 220 along ionic channel 230 from sputtering target 210.Desirable form and profile can realize by micro-scale (as parabolic indenture) and/or macro-scale (as the target surface profile) correction to this target geometrical shape and profile.One base plate can be coupled to core material and provide a stationary installation to provide to the other support of this sputtering target and for this sputtering target.

Sputtering target considered here comprises any suitable shape and size, looks closely its purposes and is used for the metrical instrument of its PVD method and decides.Here contemplated sputtering target also comprises surfacing 260 and core material 270, wherein surfacing 260 is coupled to core material 270.Just as used herein, physical connection (the binding agent of term " coupling " expression two portions object or assembly, the interface connects material) or two portions object or assembly between physics and/or chemical attraction, comprise with joint efforts such as covalency and ionically bonded linkage force and the nonbonding such as Robert Van de Walle, static, coulomb, hydrogen bond and/or magneticattraction.Surfacing 260 generally can have identical elemental composition or chemical ingredients/component with core material 270, perhaps can change or change to elemental composition and the chemical ingredients that is different from core material 270 to the elemental composition of surfacing 260 and chemical ingredients.In most embodiments, surfacing 260 has identical elemental composition and chemical ingredients with core material 270.But, in some embodiments, may be important as if when having finished the work-ing life of measuring this target, or deposit one deck mixed material layer be important, then can handle, to comprise different elemental compositions or chemical ingredients surfacing 260 and core material 270.

Surfacing 260 is to survey that part of target 210 that time point is exposed to the energy arbitrary, also is to desire to be used for producing that part of entire target material of hope as the atom of overlay coating.In addition, surfacing 260 is those parts of sputtering target 210, and this part comprises at least two indentures of having a mind to make that constitute a collimation profile or form.Just as used herein, " collimator shape " is that part of surfacing 260 of sputtering target 210, it directly influences the cosine distribution of its atom in such a way, makes this cosine distribution Billy arrive measurable degree with this atom distribution narrow that occurs in the conventional sputtering target.In other words, although the further external factor that influences this sputtered atom can be arranged, but need not any external factor, such as magnet, chemical additive or mask, in conjunction with at least two indentures of having a mind to make that constitute a collimation profile, just can make generally always to narrow down by the conventional cosine distribution of the atom that conventional sputtering target produced.Difference between the cosine distribution that conventional cosine distribution of atom and atom narrow down is found in previous described prior art Fig. 1 and Fig. 3.

Just as already mentioned, for producing a collimation profile or a form, to form two indentures of having a mind to make in the surfacing 260 of sputtering target 210 at least.The embodiment that has big relatively having a mind to make indenture generally comprises the processing that is referred to as " macro-scale correction ".Phrase " macro-scale correction " is used for representing to process this target surface by circular wavy profile here, with the unbalanced abrasion of the rotary magnet in the compensation magnetron system to target.Macro-scale correction 280 (as shown in Figure 4) will be included in the indenture of having a mind to make big relatively in the sputtering target 210 usually in most of embodiments, such indenture similar protruding or concavees lens or circular cone.Have more than two relatively little embodiments of having a mind to the indenture of making and generally comprise the processing that is referred to as " nick trace " 250.Term " nick trace ", just as used herein, expression constitutes those indentures of the passage with closed loop shape, and its shape comprises circle (circle), hexagonal (hexagonal), triangle (triangle), pros, oval and other closed loops bent or straight flange, and the aspect ratio greater than 1: 1 will be arranged.Fig. 3 is the cross sectional view of nick trace in the sputtering target.Fig. 4 is the top view of nick trace 250 and macro-scale correction 280 in the sputtering target 210.Fig. 4 also shows the closed loop shape principle of design in the sputtering target that comprises nick trace 250.Imagine a sputtering target again and can nick trace 250 be arranged existing macro-scale correction 280 again.Sputtering target 4 (b) among Fig. 4 and 4 (d) are exactly the target that had not only comprised macro-scale correction 280 but also comprised nick trace 250.

Macro-scale correction 280 and nick trace 250 can or constitute by compression molding or by some physics or mechanical workout, chemistry and/or etching/removal method when this target is made at first.Further consider and can just macro-scale correction 280 be molded on the target 210 when target 210 initial formation that nick trace 250 then just etches on the target 210 after the initial formation of this target, perhaps vice versa.More particularly, as shown in Figure 5, the formation method of autocollimation sputtering target 210 is: a core material 270 (330) a) is provided; B) provide a surfacing 260 (310); C) core material 270 is coupled to surfacing 260 and makes at least two indentures of having a mind to formation sputtering target 210 (320) and d), wherein this indenture forms the profile (330) of a collimation.

Core material 270 is designed surfacing 260 is provided support, and can in sputter procedure, provide other atom or about target work-ing life termination information.For example, comprising the space that the material different with original surfacing 260 and quality control apparatus measure between target 210 and disk 220 at core material 270 exists under the situation of core material atom, may need target 210 is removed and processed again or scraps fully, because the chemical integrity of its metal plating and element purity may be owing to the undesirable material of deposit on this original surface/disk layer suffers damage.Core material 270 is again that part of sputtering target 210 that does not comprise macro-scale correction 280 or nick trace 250, and in other words, core material is usually in structure be constant in shape.

Sputtering target 210 generally can comprise any material, and it can will a) form a sputtering target reliably; B) be subjected to energy when bombardment from this target sputter and c) be suitable on disk or surface, producing final or primary layer.Manufacturing the material that suitable sputtering target 210 considered is metal, metal alloy, conducting polymer, conductive composites, conductivity monomer, dielectric materials, hard mask material and any other sputter material that is fit to.Just as used herein, term " metal " expression is in those elements in periodic table of elements d district and f district, together with those elements such as the silicon and the germanium of the characteristic with metalloid.Just as used herein, " d district " represents those elements, and they have the electronics of filling around 3d, 4d, 5d and the 6d track of element nuclear.Just as used herein, " f district " represents those elements, and they have fills around the 4f of element nuclear and the electronics of 5f track, comprises lanthanon and actinide elements.Preferred metals is drawn together titanium, silicon, cobalt, copper, nickel, iron, zinc, vanadium, zirconium, aluminium and alumina-base material, tantalum, niobium, tin, chromium, platinum, palladium, gold and silver, tungsten, molybdenum, cerium, promethium, thorium or its combination.Preferred metal comprises copper, aluminium, tungsten, titanium, cobalt, tantalum, magnesium, lithium, silicon, manganese, iron or its combination.Most preferred metal comprises copper, aluminium and alumina-base material, tungsten, titanium, mills, cobalt, tantalum, niobium or its combination.Planning preferred examples of material comprises aluminium and copper, is made for ultra-fine grain aluminium and copper sputtering target; Aluminium, copper, cobalt, tantalum, zirconium and titanium are for being used for the 300mm sputtering target; And the aluminium that is used for the sputtered aluminum target of deposit one high conformal thin " seed " layer on upper layer.Should be appreciated that, here use phrase " and combination " to be illustrated in some sputtering target and may have impurity, as copper sputtering target chromium and aluminium impurity are arranged, perhaps may there be the combination intentionally of the other material of metal and its sputtering target of formation, such as those targets that comprise alloy, boride, carbide, fluorochemical, nitride, silicide, oxide compound and other things.

Term " metal " also comprises alloy, metal/metal composites, ceramic-metal composite, metal polymer composite and other metal composites.Here the alloy of Kao Lving comprises gold, antimony, arsenic, boron, copper, germanium, nickel, indium, palladium, phosphorus, silicon, cobalt, vanadium, iron, hafnium, titanium, iridium, zirconium, tungsten, silver, platinum, tantalum, tin, zinc, lithium, manganese, rhenium and/or rhodium.Concrete alloy comprises golden antimony, gold arsenic, gold boron, gold copper, gold germanium, gold nickel, gold nickel indium, the gold palladium, gold phosphorus, gold silicon, gold and silver platinum, the gold tantalum, gold tin, gold zinc, the palladium lithium, palladium manganese, palladium nickel, the platinum palladium, the palladium rhenium, the platinum rhodium, silver arsenic, silver-bearing copper, the silver gallium, the silver gold, the silver palladium, the silver titanium, the titanium zirconium, aluminum bronze, aluminium silicon, the aluminium copper silicon, the aluminium titanium, chromium-copper, chromium manganese palladium, chromium manganese platinum, chrome molybdenum, the chromium ruthenium, cobalt platinum, cobalt zirconium niobium, cobalt zirconium rhodium, cobalt zirconium tantalum, copper nickel, iron aluminium, the iron rhodium, the iron tantalum, the chrome-silicon oxide compound, chrome alum, cobalt chromium, cobalt chromium nickel, cobalt chromium platinum, cobalt chromium tantalum, cobalt chromium tantalum platinum, ferro-cobalt, ferro-cobalt boron, ferro-cobalt chromium, the ferro-cobalt zirconium, cobalt nickel, the cobalt nickel chromium triangle, the cobalt ferronickel, the crawl of cobalt nickel, cobalt niobium zirconium, the cobalt ferro-niobium, cobalt niobium titanium, iron tantalum chromium, manganese iridium, manganese palladium platinum, manganese platinum, the manganese rhodium, the manganese ruthenium, nickel chromium triangle, nickel chromium triangle silicon, the nickel ferro-cobalt, ferronickel, ferronickel chromium, the ferronickel rhodium, the ferronickel zirconium, nickel manganese, the nickel vanadium, tungsten titanium and/or its combination.

As for expect here as the other materials of sputtering target 210, following combination is the example (though this list is not complete) of the sputtering target 210 considered: the chromium boride, the lanthanum boride, the molybdenum boride, the niobium boride, the tantalum boride, the titanium boride, the tungsten boride, the vanadium boride, the zirconium boride, boron-carbide, chromium carbide, the molybdenum carbide, the niobium carbide, silicon carbide, the tantalum carbide, titanium carbide, tungsten carbide, the vanadium carbide, the zirconium carbide, aluminium fluoride, the vanadium fluorochemical, the calcium fluorochemical, the cerium fluorochemical, sodium aluminum fluoride, the lithium fluorochemical, the magnesium fluorochemical, the potassium fluorochemical, rare earth fluorine, the sodium fluorochemical, aln precipitation, boron nitride, the niobium nitride, silicon nitride, tantalum nitride, titanium nitride, the vanadium nitride, zirconium nitride, the chromium silicide, molybdenum silicide, the niobium silicide, the tantalum silicide, Titanium silicide, tungsten silicide, the vanadium silicide, the zirconium silicide, aluminum oxide, sb oxide, ba oxide, barium titanate, the bismuth oxide compound, hafnium oxide, magnesium oxide, molybdenum oxide, the niobium pentoxide, rare earth oxide, the silicon dioxide, silicon-oxide compound, strontium oxide, strontium titanate, the tantalum pentoxide, tin-oxide, indium oxide, indium tin oxide, lanthanum aluminate, lanthanum-oxides, lead titanate, lead zirconates, plumbous zirconate-titanate, titanium aluminide, Lithium niobium trioxide, titanium oxide, tungsten oxide, yttrium oxide, zinc oxide, Zirconium oxide, the bismuth telluride, the cadmium selenide, the cadmium telluride, plumbous selenide, plumbous sulfide, plumbous telluride, the molybdenum selenide, molybdenum sulphide, the zinc selenide, zinc sulfide, zinc telluride and/or its combination.

The film that sputtered atom produced of the target of argumentation here or layer can form on the layer of arbitrary ordinal number or density, comprise other metal levels, hypothallus 220, dielectric layer, hard mask or corrosion preventing layer, lithography layer, anti-reflecting layer etc.In some preferred embodiment, its dielectric layer can comprise that Honeywell international corporation considers, make or disclosed dielectric materials, include but not limited to: a) FLARE (poly-(arylene ether)), such as the patent US 5959157 that is issuing, US 5986045, US 6124421, US 6156812, US 6172128, US 6171687, US 6214746 and pending application 09/197478,09/538276,09/544504,09/741634,09/651396,09/545058,09/587851,09/618945,09/619237, those disclosed compound in 09/792606; B) based on the material of diamantane, such as submit to 15,60/347195 and 2002 on the January of submitting in the PCT/US01/22204 that submits to October 17 calendar year 2001 in pending application 09/545058, series application, the PCT/US 01/50182 that submits to December 31 calendar year 2001,8,60/345374,2002 on the January that submits to December 31 calendar year 2001 60/350187 in pointed those; Disclosed compound among the WO 01/29052 of United States Patent (USP) of c) authorizing jointly 5,115,082,5,986,045 and 6,143,855 and the distribution in 26 days April calendar year 2001 of common specified international monopoly publication and the WO 01/29141 of distribution on April 26 calendar year 2001; D) millimicro hole silica material and based on the compound of silica, such as the patent US 6022812 that is issuing, US 6037275, US 6042994, US 6048804, US 6090448, US 6126733, US 6140254, US 6204202, US 6208014 and pending application 09/046474,09/046473,09/111084,09/360131,09/378705,09/234609,09/379866,09/141287,09/379484,09/392413,09/549659,09/488075, those disclosed compound in 09/566287 and 09/214219 is done as a whole whole introducing here for your guidance; E) Honeywell ^The organo-siloxane of HOSP.

Disk or substrate 220 can comprise any solid material that meets the requirements basically.The substrate of wanting especially 220 will comprise film, glass, plastics, pottery, metal or coated metal be arranged or matrix material.In preferred embodiments, substrate 220 comprises arsenic silicon or arsenic germanium wafer or disk surfaces; Package surface is as seen in the lead frame of copper facing, silver, nickel or gold; Wear wall or stiffening plate interface (" copper " comprises naked copper and oxide compound thereof); Based on the assembly or the plate interface of polymkeric substance, as seen in the deflection joint of polyimide; Lead or other metal alloy soldering spheres; Glass and polymkeric substance such as polyimide.In a more preferred embodiment, substrate 220 is included in encapsulation and the material seen altogether of circuit-board industry, such as silicon, copper, glass or polymkeric substance.

Here the hypothallus 220 of Kao Lving also can be made of two layers of material at least.The layer of material that constitutes hypothallus 220 can comprise described substrate material in the past.Other layer materials that constitute this hypothallus 220 can comprise the successive layers or the milli microporous layers of polymkeric substance, monomer, organic compound, mineral compound, organometallic compound.

Just as used herein, term " monomer " refers to and can form covalent linkage or any compound of different compounds chemically in multiple mode itself.Repeat to form key between monomer and can produce linearity, branch, undue branch or three-dimensional product.In addition, monomer itself can comprise the multiple structural unit, so and be called " block polymer " by the formed polymkeric substance of such monomer polymerization.Monomer can belong to the molecule of different chemical kind, comprise organic, metal or inorganic molecule arranged.Monomeric molecular weight is can difference very big, between 40 dalton and 20000 dalton.But, especially when monomer comprises the multiple structural unit, monomer even higher molecular weight can be arranged.Monomer also can comprise other base, for example supplies the base of crosslinked usefulness.

Just as used herein, term " crosslinked " refers to a kind of method, and interacting by chemical combination by this links together two portions of at least two molecules or a long molecule.Such interaction can take place in a different manner, comprises the formation covalent linkage, forms hydrogen bond, hydrophobicity, wetting ability, ion or electrostatic interaction.In addition, interaction of molecules also between useful molecules self or two or more intermolecular temporary transient at least physical connection characterize.

The polymkeric substance of considering also can have sense miscellaneous or structure division, comprises aromatic series system and halogeno-group.And suitable polymkeric substance can have many structures, comprises homopolymer and heteropolymer.Again, alternating polymer can have dissimilar, such as linearity, branch, undue branch or three dimensional type.The molecular weight coverage of the polymkeric substance of considering is wide, generally between 400 dalton and 400000 dalton or bigger.

The example of the mineral compound of considering is silicate, aluminate and the compound that contains transition metal.The example of organic compound comprises poly arylene ether, polyimide and polyester.The metal-organic example of considering comprises poly-(dimethyl siloxane), poly-(vinylsiloxane) and poly-(trifluoropropyl siloxane).

Hypothallus 220 also can have the polybasic hole, if expect the millimicro hole and discrete material.Hole is generally spheric, but can select or append any suitable shape, comprises tubulose, stratiform, plate-like or other shapes.Consider that again hole can have any appropriate diameter.At least some that consider this hole again can connect contiguous hole has quite big connection or " opening circuit " porosity with generation structure.This hole preferably has the mean diameter less than 1 micron, more preferably less than 100 millimicrons mean diameter, the mean diameter less than 10 millimicrons is arranged more preferably also.Further imagination can make this porous nickel ground or be scattered in randomly within its hypothallus.In an embodiment preferred, this hole is scattered in the hypothallus 220 equably.

Make and use autocollimation or given configuration sputtering target 210, except other benefit, the benefit of being considered comprises simplicity of design, low, the interior dress collimator of relative cost, the step fraction of coverage is better and comparative lifetime target is longer.

Use

Sputtering target described here can be incorporated into production, make or change electronics, semi-conductor and communicate by letter/any method of data transfer components or produce in the design by other mode.Electronics considered here, semi-conductor and communications component be it is generally acknowledged and comprised any assembly that layer is arranged, can be used in based on electronics, based semiconductor or the product based on communication.The assembly of considering comprise microchip, circuit card, Chip Packaging, separate sheet, circuit card insulating element, the printing plugboard, touch panel, waveguide, fibre optics is with photon transmission and sonic transmissions assembly, any use or combine the prepared material of dual damascene method, with other circuit board assemblies, as electrical condenser, inducer and resistor.

Based on electronics, based semiconductor with based on communicate by letter/based on the product of data transmission, can be used at any time producing or can be on the used meaning of other users at them and " finish ".The example of the consuming product of making is TV, computer, mobile telephone, scheduler, hand held manager, can takes wireless, car stereo and telepilot.What also expect is " centre " product, such as the circuit card that is used for finished product possibly, Chip Packaging and keyboard.

Electronics, semi-conductor with communicate by letter/the data transmission product, also can comprise from conceptual model being developed to the final model machine assembly in any stage of amplifying entity model in proportion.Model machine can maybe cannot comprise all actual component of desiring to be used for finished product, and the model machine assembly that can have some to be made of matrix material, and they are to other assembly inherent influence when eliminating initial test.

On assembly surface, form a uniform films or layer, perhaps comprise: autocollimation sputtering target 400 a) is provided for the method that makes an assembly; B) provide surface 410; C) placing this surface from these autocollimation target 420 1 segment distance places; D) bombard this autocollimation target to produce at least a atom 430 and e with an energy) plate this surface with this at least a atom, as shown in Figure 6.This autocollimation target comprises sputtering target described here 210, and it is made up of surfacing 260 and core material 270, and wherein surfacing 260 has at least two indentures that form collimator shapes.The surface of this formation can be thought of as any suitable surface, just as described herein, comprises that disk, substrate, dielectric materials, hard mask layer, other metal, metal alloy or metal composite layer, anti-reflecting layer or any other suitable have a layer material.Distance between autocollimation target 210 and the surface 220 considers to comprise any suitable distance that is used for conventional PVD experimental configuration here.Also can be any suitable or thickness of wanting-to the scope of millimeter thickness, changing at the coating that produces on this surface, layer or film from an atom or molecular thickness (less than 1 millimicron).

Like this, it is just open to have made the specific embodiments and applications of sputtering target of change on the topological framework.But for those technician in this area, those except having stated obviously under the principle condition that does not depart among the present invention, also can have many improvement.Therefore, content of the present invention is not restricted except the spirit of additional claim.And when interpreting both the specification and the claims book, all terms should be by may the wideest mode being explained with context is corresponding to.Particularly term " comprises " and " comprising " should be interpreted as meaning element, assembly or step in a kind of non-exclusive mode, element, assembly or step that expression is spoken of can exist maybe and can adopt, and perhaps can combine with other element, assembly or the step do not mentioned expressly.

Claims

1. one kind comprises that a core material and is coupled to the sputtering target of the surfacing of this core material, and wherein this surfacing has at least two indentures that constitute collimator shape.

2. the sputtering target of claim 1, wherein this core material is made up of identical chemical composition with surfacing.

3. the sputtering target of claim 2, wherein this chemical composition comprises copper, aluminium, tungsten, titanium, zirconium, cobalt, aluminide, tantalum, magnesium, lithium, silicon, manganese, iron or its any combination.

4. the sputtering target of claim 3, wherein this component comprises copper, aluminium, tungsten, titanium, zirconium, cobalt, tantalum, aluminide or its combination.

5. the sputtering target of claim 1, wherein these at least two indentures comprise the macro-scale correction.

6. the sputtering target of claim 5, wherein this macro-scale correction comprises circular wavy profile.

7. the sputtering target of claim 1, wherein these at least two indentures comprise at least one nick trace.

8. the sputtering target of claim 7, wherein this at least one nick trace comprises a circular closed loop passage.

9. the sputtering target of claim 7, wherein this at least one nick trace comprises a sexangle closed loop passage.

10. the sputtering target of claim 1, wherein these at least two indentures comprise macro-scale correction and at least one nick trace.

11. form a kind of method of autocollimation sputtering target, comprising:

One core material is provided;

One surfacing is provided;

This core material is coupled to this surfacing to form sputtering target;

Form at least two indentures of having a mind in this surfacing, wherein this indenture constitutes the profile of collimation.

12. the method for claim 11 wherein provides core material and provides surfacing to comprise identical chemical composition is provided.

13. the method for claim 12, wherein this chemical composition comprises copper, aluminium, tungsten, titanium, cobalt, aluminide, tantalum, magnesium, lithium, silicon, manganese, iron or its any combination.

14. the method for claim 13, wherein this component comprises copper, aluminium, tungsten, titanium, cobalt, tantalum, aluminide or its combination.

15. the method for claim 11 wherein forms at least two indentures of having a mind to and comprises formation one macro-scale correction in this surfacing.

16. the method for claim 11 wherein forms at least two indentures of having a mind to and comprises formation one circular wavy profile in this surfacing.

17. the method for claim 11 wherein forms at least two indentures of having a mind to and comprises at least one nick trace of formation in this surfacing.

18. the method for claim 17 wherein forms this at least one nick trace and comprises the circular closed loop passage of formation.

19. the method for claim 17 wherein forms this at least one nick trace and comprises formation sexangle closed loop passage.

20. the method for claim 11 wherein forms at least two indentures of having a mind to and comprises formation macro-scale correction and at least one nick trace in this surfacing.

21. a method that forms a uniform films from the teeth outwards comprises:

One autocollimation sputtering target is provided;

One surface is provided;

Placing this surface from this autocollimation sputtering target one segment distance place;

Bombard this autocollimation sputtering target to produce at least a atom with an energy; And

Plate this surface with this at least a atom.

22. formed film of the sputtering target by claim 11.

23. formed film of the method with claim 21.

24. by the made assembly of the sputtering target of claim 11.

25. the assembly by the film that method formed of claim 21 of dress.

26. by the formed electrical condenser of the sputtering target of claim 11.

27. the electrical condenser by the film that method formed of claim 21 is housed.