CN1542171A - Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film - Google Patents
Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film Download PDFInfo
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- CN1542171A CN1542171A CNA2003101084631A CN200310108463A CN1542171A CN 1542171 A CN1542171 A CN 1542171A CN A2003101084631 A CNA2003101084631 A CN A2003101084631A CN 200310108463 A CN200310108463 A CN 200310108463A CN 1542171 A CN1542171 A CN 1542171A
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- Prior art keywords
- inlet pipe
- growing
- source inlet
- vapor deposition
- sample
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 16
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 150000002902 organometallic compounds Chemical class 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 239000011701 zinc Substances 0.000 claims abstract description 10
- 238000005336 cracking Methods 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000002524 organometallic group Chemical group 0.000 claims description 12
- 238000013022 venting Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000005070 sampling Methods 0.000 abstract 3
- 230000003213 activating effect Effects 0.000 abstract 2
- 125000004429 atom Chemical group 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000000802 nitrating effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
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Abstract
The metal organic compound vapor deposition apparatus for growing zinc oxide semiconductor film includes growing chamber, sampling chamber, movable gate connecting the growing chamber and the sampling chamber, and atom generator for activating and cracking nitrogen source gas with gas outlet pipe set inside the growing chamber. The growing structure is one double-layer wall water cooling structure and provided with motor driven horizontal sample rack, sample heater, oxygen source inlet pipe, zinc source inlet pipe and exhaust port. During operation, cleaned substrate is fed via the sampling chamber into the growing chamber, the sample growing plane is fixed onto the rack, different reaction gases are input to grow crystal film of different performance. In the same time, nitrogen atom obtained through activating and cracking nitrogen source gas is fed to the growing chamber to obtain high quality n-type and p-type ZnO semiconductor crystal film.
Description
Technical field
The present invention relates to a kind of organometallics gas deposition (MOCVD) equipment, particularly a kind of organometallics vapor deposition apparatus that is applicable to developing zinc oxide (ZnO) semiconductor film material.
Background technology
ZnO film is as a kind of important semiconductor material with wide forbidden band, and it is in the optoelectronic areas great prospect.But realize the application of Zinc oxide-base device, the n with certain carrier concentration of growing controllable and the high-quality zinc oxide crystal film of p type are necessary.The growth method of ZnO film has methods such as molecular beam epitaxy, magnetron sputtering, pulsed laser deposition and collosol and gel.And the MOCVD technology is a kind of important compound semiconductor epitaxial growing technology, can realize accurately mixing in real time of epitaxial film, and cost is moderate, can be used for suitability for industrialized production.
At present, the general comparatively traditional MOCVD device that adopts of people, this device has the movable flashboard of Sample Room, growth room, connection Sample Room and growth room, and the growth room is provided with horizontal sample frame, sample heating device, oxygen source inlet pipe, zinc source inlet pipe and the venting port of rotation.Owing to traditional MOCVD device exists comparatively serious gas-phase reaction to form particle in growth ZnO process, reduced the quality of crystal film, and be difficult to obtain effective p type doped source, so do not solve the transformation that grows high-quality ZnO crystal film and realize its p type with the MOCVD method basically.
Summary of the invention
The purpose of this invention is to provide a kind of flow state that can improve growth room's reaction gases, the organometallics vapor deposition apparatus of even, high-quality n type of growth thickness and p type ZnO semiconductor film.
Organometallics vapor deposition apparatus of the present invention, the movable flashboard that comprises growth room, Sample Room, connection growth room and Sample Room, the growth room is provided with horizontal sample frame, sample heating device, oxygen source inlet pipe, zinc source inlet pipe and the venting port of rotation, it is characterized in that also comprising the atomic generator that is used to activate the cracking nitrogen source gas, the escape pipe of atomic generator is inserted in the growth room, said growth room is a double wall, and interlayer fills water coolant, and growth room's outer wall has water-in and water outlet.
Above-mentioned atomic generator can be electron cyclotron resonace atomic generator or radio frequency atomic generator.
Usually, with oxygen source inlet pipe horizontal positioned, and make it have flat air outlet, the air outlet of zinc source inlet pipe is horn-like, and is positioned at oxygen source inlet pipe below, to the oxygen source inlet pipe inclination of horizontal positioned.Can make the duration of contact shortening of two kinds of gases in gas phase like this, suppress homogeneous reaction.And venting port is located at reactor top, and so that resultant gas discharges from reactor top, avoid gas convection current and cause overstand in the growth room, be beneficial to and reduce because the particle that homogeneous reaction generates.
During work, substrate after at first will cleaning is transported to the growth room by Sample Room, the substrate aufwuchsplate is fixed on the horizontal sample frame of rotation down, can reduce the contamination of particle like this to sample, heated substrate is to preset value when rotating specimen holder, and as required, import processing parameters such as different reactant gasess and attemperation, pressure, specimen holder rotating speed, crystal film with the growth different performance, simultaneously, to activate the isolated nitrogen-atoms input of the high-purity nitrogen source gas of cracking growth room through atomic generator, can obtain the p type zinc oxide crystal film of nitrating.Not under the working condition, feed n type doping source of the gas at atomic generator,, just can grow n type ZnO semiconductor crystal film as triethyl-gallium.
Organometallics vapor deposition apparatus of the present invention, because the high-purity nitrogen source gas of atomic generator activation cracking is arranged, produce nitrogen-atoms input growth room, can not only realize in real time effective nitrating, and can make the reactant gases in the growth room reach laminar flow regime preferably, grow even, high-quality n type of thickness and p type ZnO semiconductor crystal film.
Description of drawings
Fig. 1 is an organometallics vapor deposition apparatus synoptic diagram of the present invention.
Embodiment
With reference to Fig. 1, the organometallics vapor deposition apparatus of developing zinc oxide semiconductor film of the present invention comprises the movable flashboard 4 of growth room 1, Sample Room 2, connection growth room and Sample Room and is used to activate the atomic generator 9 of cracking nitrogen source gas, the escape pipe 3 of atomic generator 9 is inserted in the growth room 1, the growth room adopts water-cooling structure, has double wall, outer wall has water-in 10 and water outlet 14, interlayer fills water quench, can avoid the reaction on growth room's inwall, and can increase the thermograde of substrate surrounding gas, reduce even gas-phase reaction.Be provided with horizontal sample frame 13, sample heating device 12, oxygen source inlet pipe 7, zinc source inlet pipe 8 and venting port 6 by motor 5 driven rotary in the growth room, wherein, oxygen source inlet pipe horizontal positioned, its flat air outlet width is 0.5～10mm, length per sample size and decide.The air outlet of zinc source inlet pipe is horn-like, and is positioned at oxygen source inlet pipe below, to the oxygen source inlet pipe inclination of horizontal positioned.Venting port 6 is located at reactor top.
During work, substrate 11 after at first will cleaning is transported to the growth room by Sample Room, the substrate aufwuchsplate is fixed on the horizontal sample frame of rotation down, heated substrate is to preset value, as the nitrogen and high-purity (more than the 99.999%) N that will contain high-purity (more than 99.999%) zinc ethyl when rotating specimen holder
2O feeds growth rooms from oxygen source inlet pipe 7, zinc source inlet pipe 8 respectively, simultaneously, with nitrogen feed the radio frequency atomic generator carry out cracking after isolated nitrogen-atoms be input to the growth room, can obtain the p type ZnO crystal film of nitrating.
Claims (4)
1. the organometallics vapor deposition apparatus of developing zinc oxide semiconductor film, comprise growth room (1), Sample Room (2), the movable flashboard (4) that connects growth room and Sample Room, the growth room is provided with the horizontal sample frame (13) of rotation, sample heating device (12), oxygen source inlet pipe (7), zinc source inlet pipe (8) and venting port (6), it is characterized in that also comprising the atomic generator (9) that is used to activate the cracking nitrogen source gas, the escape pipe (3) of atomic generator (9) is inserted in the growth room (1), said growth room is a double wall, interlayer fills water coolant, and growth room's outer wall has water-in (10) and water outlet (14).
2. by the described organometallics vapor deposition apparatus of claim 1, it is characterized in that said atomic generator (9) is electron cyclotron resonace atomic generator or radio frequency atomic generator.
3. by the described organometallics vapor deposition apparatus of claim 1, it is characterized in that oxygen source inlet pipe (7) horizontal positioned, have flat air outlet.
4. by the described organometallics vapor deposition apparatus of claim 1, it is characterized in that the air outlet of zinc source inlet pipe (8) is horn-like, and be positioned at oxygen source inlet pipe below, to oxygen source inlet pipe (7) inclination of horizontal positioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310108463 CN1246508C (en) | 2003-11-04 | 2003-11-04 | Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310108463 CN1246508C (en) | 2003-11-04 | 2003-11-04 | Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1542171A true CN1542171A (en) | 2004-11-03 |
| CN1246508C CN1246508C (en) | 2006-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310108463 Expired - Fee Related CN1246508C (en) | 2003-11-04 | 2003-11-04 | Metal organic compound vapor deposition device for the growth of zinc oxide semiconductor film |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353578C (en) * | 2005-11-18 | 2007-12-05 | 浙江大学 | UV electroluminescence device of silicon base zinc oxide and preparation process thereof |
| CN100554504C (en) * | 2007-03-21 | 2009-10-28 | 中国科学院半导体研究所 | Chemical vapor deposition unit of high-purity zinc oxide and preparation method thereof |
| CN102206856A (en) * | 2011-05-04 | 2011-10-05 | 中国科学院半导体研究所 | Method for growing zinc oxide material by modulating temperature periodically |
| MD4517C1 (en) * | 2016-10-11 | 2018-04-30 | Государственный Университет Молд0 | Method for gaseous-phase production of ZnO single crystals without seed |
| CN109580325A (en) * | 2018-11-17 | 2019-04-05 | 金华职业技术学院 | A kind of method of sedimentation preparation of film sample |
-
2003
- 2003-11-04 CN CN 200310108463 patent/CN1246508C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100353578C (en) * | 2005-11-18 | 2007-12-05 | 浙江大学 | UV electroluminescence device of silicon base zinc oxide and preparation process thereof |
| CN100554504C (en) * | 2007-03-21 | 2009-10-28 | 中国科学院半导体研究所 | Chemical vapor deposition unit of high-purity zinc oxide and preparation method thereof |
| CN102206856A (en) * | 2011-05-04 | 2011-10-05 | 中国科学院半导体研究所 | Method for growing zinc oxide material by modulating temperature periodically |
| MD4517C1 (en) * | 2016-10-11 | 2018-04-30 | Государственный Университет Молд0 | Method for gaseous-phase production of ZnO single crystals without seed |
| CN109580325A (en) * | 2018-11-17 | 2019-04-05 | 金华职业技术学院 | A kind of method of sedimentation preparation of film sample |
| CN109580325B (en) * | 2018-11-17 | 2023-08-29 | 金华职业技术学院 | Method for preparing film sample by deposition |
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| Publication number | Publication date |
|---|---|
| CN1246508C (en) | 2006-03-22 |
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