CN1538482A - Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method - Google Patents
Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method Download PDFInfo
- Publication number
- CN1538482A CN1538482A CNA031231373A CN03123137A CN1538482A CN 1538482 A CN1538482 A CN 1538482A CN A031231373 A CNA031231373 A CN A031231373A CN 03123137 A CN03123137 A CN 03123137A CN 1538482 A CN1538482 A CN 1538482A
- Authority
- CN
- China
- Prior art keywords
- tungsten
- cathode
- powder
- preparation
- iridium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Solid Thermionic Cathode (AREA)
- Powder Metallurgy (AREA)
Abstract
Cathode is composed of 10-30% wt iridium powder and 70-90% wt tungsten powder, and dipping aluminate is in small opening. Preparation method is as following: annealing is carried out for iridium powder and tungsten powder in hydrogen furnace under 1000-1500deg.C; mixing iridium powder and tungsten powder and grinding the mixture evenly; pressing the mixture by stamper with molybdenum tube being inside so as to prepare flat-headed cathode; putting cathode in hydrogen furnace for heat preservation 1-10 hours under 1500-2000 deg.C; putting cathode in aluminate powder, at hydrogen atmosphere, 1500-2000 deg.C for 1-10 minutes and cleaning out float salt; installing heater obtains cathode needed.
Description
Technical field
The present invention relates to the barium-tungsten dispense cathode on a kind of electronic tube tube, relate in particular to a kind of dipped barium-tungsten cathode based on tungsten irridium alloy.
The invention still further relates to a kind of method for preparing above-mentioned dipped barium-tungsten cathode.
Background technology
Traditional dipped barium-tungsten cathode because have that surperficial work function is low, emission current is big, life-span characteristics such as length, better working stability, anti-poisoning and anti-ion bombardment ability be strong, so as electron source, be widely used in all kinds of great-power electronic tube devices, as picture tube of klystron, magnetron, travelling wave tube and high definition high brightness etc.But it exists, and technology is numerous and diverse, difficulty is big, repeatability and defectives such as poor stability, cost height, in addition, along with high power valve improves requirement day by day, original traditional dipped barium-tungsten cathode emission current is big inadequately, the life-span falls short of, working temperature is too high, the imperfect inferior position of job stability does not catch up with development of the situation day by day.
Summary of the invention
The object of the present invention is to provide a kind of dipped barium-tungsten cathode based on tungsten irridium alloy, this dipped barium-tungsten cathode has advantages such as emission current is big, the life-span long, working temperature is not high, good operating stability.
Another object of the present invention is to provide a kind of method for preparing above-mentioned dipped barium-tungsten cathode, and this preparation method's technology is simple, repeatability and good stability.
For achieving the above object, it consists of weight ratio 10-30% iridium powder and 70-90% tungsten powder dipped barium-tungsten cathode provided by the invention, is impregnated with aluminate in its hole.
The method of the above-mentioned dipped barium-tungsten cathode of preparation provided by the invention is:
1) tungsten powder and iridium powder are put into 1000-1500 ℃ of hydrogen furnace annealing respectively.
2) get 10-30% iridium powder by weight, surplus is a tungsten powder, and these two kinds of materials are ground mixing.There is the pressing mold of molybdenum tube that mixture is pressed into the flat-top cathode with interior.
3) cathode of step 2 preparation is put into the hydrogen stove, when temperature reaches 1500-2000 ℃, be incubated 1-10 hour.The cathode of preparing is that 250 times microscopically is observed even pore distribution in multiplication factor.
4) cathode that step 3 is made places the aluminate powder, and in the hydrogen atmosphere, 1500-2000 ℃ flooded 1-10 minute.Floating salt behind the dipping is removed with tungsten wire cotton mass.
5) heater is installed, the complete dipped barium-tungsten cathode preparation based on tungsten irridium alloy finishes.
Preparation method of the present invention has the characteristic that traditional handicraft does not possess:
A, because be one-shot forming, need not go twice technology such as copper again through soaking copper in traditional overlay film dipped barium-tungsten cathode production technology, simplified operation, also shortened the production cycle simultaneously.
B, because of being compacting, rather than car system processing, the car line that does not stay because of car system on the cathode plane has guaranteed enough fineness.
C, remove copper because of not needing chemistry, so can not stay the evidence of oxide that causes because of acidifying inside and outside the spongy body of tungsten, guaranteed that spongy body of tungsten possesses fresh that contacts with active material, helping emitting material plays a role effectively, be convenient to the electronics emission, more can not stay residues such as copper only because of removing copper.
D, because of when compacting the negative electrode cavernous body be connected as a single entity with the molybdenum tube, so do not exist because of welding the improper anticathode pollution that causes with the molybdenum tube, also thereby with low cost.
E, because be at same mould compacted under, so each negative electrode (even radian is arranged) all is identical, process repeatability and good stability are suitable for multiple-beam klystron most.
Description of drawings
Fig. 1 is the dipped barium-tungsten cathode structural representation based on tungsten irridium alloy provided by the invention, among the figure: 1-tungsten powder+iridium powder+aluminate; 2-molybdenum tube; The 3-heater; 4-heater leg.
Fig. 2 is the dipped barium-tungsten cathode direct current emssion characteristic curve based on tungsten irridium alloy provided by the invention.
Embodiment
It consists of weight ratio 10-30% iridium powder and 70-90% tungsten powder dipped barium-tungsten cathode provided by the invention, is impregnated with aluminate in its hole.
The method of the above-mentioned dipped barium-tungsten cathode of preparation provided by the invention is:
1) adopts microparticle, highly purified tungsten powder and iridium powder, tungsten powder, iridium powder are put into 1200 ℃ of hydrogen furnace annealings respectively,, and strengthen its plasticity with thorough purification.
2) get 20% iridium powder and 80% tungsten powder by weight, these two kinds of material mixing are ground, guarantee evenly.There is the pressing mold of molybdenum tube that mixture is pressed into the flat-top cathode with interior.The diameter of this flat-top cathode is 2-5mm, and thickness is 1-4mm.Its diameter of flat-top cathode of present embodiment preparation is 3.6mm, and thickness is 2mm.
3) cathode of step 2 preparation is put into the hydrogen stove, when temperature reaches 1900 ℃, be incubated 3 hours.
4) cathode that step 3 is made places the aluminate powder, and in the hydrogen atmosphere, 1600 ℃ flooded 1 minute.Floating salt behind the dipping is removed with tungsten wire cotton mass.
5) heater and heater leg are installed,, for simplicity's sake, no longer are repeated in this description because of this step is a known technology.
The complete dipped barium-tungsten cathode preparation based on tungsten irridium alloy finishes, and Fig. 1 is the structural profile schematic diagram of dipped barium-tungsten cathode, and its direct current emssion characteristic curve is referring to Fig. 2.
Claims (3)
1, a kind of dipped barium-tungsten cathode based on tungsten irridium alloy, it consists of weight ratio 10-30% iridium powder and 70-90% tungsten powder, is impregnated with aluminate in its hole.
2, a kind of preparation method of dipped barium-tungsten cathode according to claim 1, its key step is:
A) tungsten powder and iridium powder are put into 1000-1500 ℃ of hydrogen furnace annealing respectively;
B) get 10-30% iridium powder by weight, surplus is a tungsten powder, and these two kinds of materials are ground mixing, has the pressing mold of molybdenum tube that mixture is pressed into the flat-top cathode in using;
C) cathode of step b preparation is put into the hydrogen stove, when temperature reaches 1500-2000 ℃, be incubated 1-10 hour;
D) cathode that step c is made places the aluminate powder, and in the hydrogen atmosphere, 1500-2000 ℃ flooded 1-10 minute, and the floating salt behind the dipping is removed with tungsten wire cotton mass;
E) heater is installed.
3, method as claimed in claim 2 is characterized in that, the described flat-top cathode of step b diameter is 2-5mm, and thickness is 1-4mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031231373A CN1298006C (en) | 2003-04-17 | 2003-04-17 | Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031231373A CN1298006C (en) | 2003-04-17 | 2003-04-17 | Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1538482A true CN1538482A (en) | 2004-10-20 |
CN1298006C CN1298006C (en) | 2007-01-31 |
Family
ID=34321220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031231373A Expired - Fee Related CN1298006C (en) | 2003-04-17 | 2003-04-17 | Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1298006C (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100431770C (en) * | 2005-08-31 | 2008-11-12 | 安徽华东光电技术研究所 | Impregnated barium-tungsten cathode solder and method for using same |
CN100431772C (en) * | 2005-08-31 | 2008-11-12 | 安徽华东光电技术研究所 | Solder using for impregnated barium-tungsten cathode and method for using same |
CN100443247C (en) * | 2005-08-31 | 2008-12-17 | 安徽华东光电技术研究所 | Impregnated barium-tungsten cathode solder and method for using same |
CN110634721A (en) * | 2019-09-02 | 2019-12-31 | 安徽华东光电技术研究所有限公司 | Preparation method of molybdenum cup-shaped piece in cathode assembly of broadband millimeter wave traveling wave tube |
CN111128639A (en) * | 2019-12-23 | 2020-05-08 | 北京工业大学 | Method for preparing impregnated MM type cathode by microwave sintering |
CN112760677A (en) * | 2020-12-28 | 2021-05-07 | 中国科学技术大学 | Iridium-tungsten alloy nano material, preparation method thereof and application of iridium-tungsten alloy nano material as acidic oxygen evolution reaction electrocatalyst |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4165473A (en) * | 1976-06-21 | 1979-08-21 | Varian Associates, Inc. | Electron tube with dispenser cathode |
JPS62219426A (en) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | Manufacture of impregnated cathode structure |
-
2003
- 2003-04-17 CN CNB031231373A patent/CN1298006C/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100431770C (en) * | 2005-08-31 | 2008-11-12 | 安徽华东光电技术研究所 | Impregnated barium-tungsten cathode solder and method for using same |
CN100431772C (en) * | 2005-08-31 | 2008-11-12 | 安徽华东光电技术研究所 | Solder using for impregnated barium-tungsten cathode and method for using same |
CN100443247C (en) * | 2005-08-31 | 2008-12-17 | 安徽华东光电技术研究所 | Impregnated barium-tungsten cathode solder and method for using same |
CN110634721A (en) * | 2019-09-02 | 2019-12-31 | 安徽华东光电技术研究所有限公司 | Preparation method of molybdenum cup-shaped piece in cathode assembly of broadband millimeter wave traveling wave tube |
CN110634721B (en) * | 2019-09-02 | 2021-08-27 | 安徽华东光电技术研究所有限公司 | Preparation method of molybdenum cup-shaped piece in cathode assembly of broadband millimeter wave traveling wave tube |
CN111128639A (en) * | 2019-12-23 | 2020-05-08 | 北京工业大学 | Method for preparing impregnated MM type cathode by microwave sintering |
CN111128639B (en) * | 2019-12-23 | 2022-08-16 | 北京工业大学 | Method for preparing impregnated MM type cathode by microwave sintering |
CN112760677A (en) * | 2020-12-28 | 2021-05-07 | 中国科学技术大学 | Iridium-tungsten alloy nano material, preparation method thereof and application of iridium-tungsten alloy nano material as acidic oxygen evolution reaction electrocatalyst |
CN112760677B (en) * | 2020-12-28 | 2021-12-10 | 中国科学技术大学 | Iridium-tungsten alloy nano material, preparation method thereof and application of iridium-tungsten alloy nano material as acidic oxygen evolution reaction electrocatalyst |
Also Published As
Publication number | Publication date |
---|---|
CN1298006C (en) | 2007-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1209482C (en) | Active raw material for thermal sprayed system, thermal sprayed electrodes of energy storage and conversion device made of it and manufacture method thereof | |
Talin et al. | Electron field emission from amorphous tetrahedrally bonded carbon films | |
US20030111946A1 (en) | FED cathode structure using electrophoretic deposition and method of fabrication | |
US7986084B2 (en) | Field emission lamp | |
US5973446A (en) | Field emission cathode and methods in the production thereof | |
CN1298006C (en) | Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method | |
WO2005045871A1 (en) | Field emission device with coating layer and method for fabricating the same | |
CN1298007C (en) | Dipped barium tungsten cathode based on nanometer material silicn dioxide and reparation method | |
CA2212681C (en) | A field emission cathode and methods in the production thereof | |
CN100397546C (en) | Impregnated barium tungsten cathode based on tungsten fibre and its preparation method | |
CN1538484A (en) | Dipped barium tengsten cathode and preparation method | |
CN105788996B (en) | A kind of submicron film scandium tungsten cathode and preparation method thereof | |
CN1056465C (en) | Laser-evaporated thin-film scandium series cathode and its preparation method | |
CN1925088A (en) | Dipped barium wolfram cathode and process for its manufacture | |
Okuyama | Growth of metallic whisker crystals incorporated with field electron emission | |
CN100511552C (en) | Dipped barium wolfram cathode and process for manufacture | |
CN100511553C (en) | Multifunctional dipped barium wolfram cathode and process for manufacture | |
CN1281586A (en) | Ion bombarded graphite electron emitters | |
CN102476787A (en) | Preparation method of ZnO nanowire array | |
CN102262988A (en) | Method for manufacturing carbon nanotube cold cathode and application of method | |
DE69920171T2 (en) | DISCHARGE LAMP | |
CN1281587A (en) | Coated wire ion bombarded graphite electron emitters | |
CN2807458Y (en) | Large power amplifier tube pyrogenation graphite grid | |
CN1923438A (en) | Impregnated barium-tungsten cathode solder and method for using same | |
CN118629843A (en) | Method for preparing carbon nanotube cold cathode by direct forming method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |