CN1538484A - Dipped barium tengsten cathode and preparation method - Google Patents
Dipped barium tengsten cathode and preparation method Download PDFInfo
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- CN1538484A CN1538484A CNA03123139XA CN03123139A CN1538484A CN 1538484 A CN1538484 A CN 1538484A CN A03123139X A CNA03123139X A CN A03123139XA CN 03123139 A CN03123139 A CN 03123139A CN 1538484 A CN1538484 A CN 1538484A
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Abstract
Cathode contains pure tungsten powder, and dipping aluminate is in small opening. Preparation method is as following: annealing is carried out for pure tungsten powder in hydrogen furnace under 500-1500deg.C; pressing the pure tungsten powder by stamper with molybdenum tube being inside so as to prepare flat-headed cathode; putting cathode in hydrogen furnace for heat preservation 1-10 hours under 1000-2000 deg.C; putting cathode in aluminate powder, at hydrogen atmosphere, 1500-2000 deg.C for 1-10 minutes and cleaning out float salt; installing heater obtains cathode needed.
Description
Technical field
The present invention relates to the barium-tungsten dispense cathode on a kind of electronic tube tube, relate in particular to a kind of novel dipped barium-tungsten cathode.
The invention still further relates to a kind of method for preparing above-mentioned dipped barium-tungsten cathode.
Background technology
Traditional dipped barium-tungsten cathode because have that surperficial work function is low, emission current is big, life-span characteristics such as length, better working stability, anti-poisoning and anti-ion bombardment ability be strong, so as electron source, be widely used in all kinds of great-power electronic tube devices, as picture tube of klystron, magnetron, travelling wave tube and high definition high brightness etc.But it exists, and technology is numerous and diverse, difficulty is big, repeatability and defectives such as poor stability, cost height, in addition, along with high power valve improves requirement day by day, original traditional dipped barium-tungsten cathode emission current is big inadequately, the life-span falls short of, working temperature is too high, the imperfect inferior position of job stability does not catch up with development of the situation day by day.
Summary of the invention
The object of the present invention is to provide a kind of novel dipped barium-tungsten cathode, this dipped barium-tungsten cathode has advantages such as emission current is big, the life-span long, working temperature is not high, good operating stability.
Another object of the present invention is to provide a kind of method for preparing above-mentioned dipped barium-tungsten cathode, and this preparation method's technology is simple, repeatability and good stability.
For achieving the above object, it consists of the pure tungsten powder dipped barium-tungsten cathode provided by the invention, is impregnated with aluminate in its hole.
The method of the above-mentioned dipped barium-tungsten cathode of preparation provided by the invention is:
1) the pure tungsten powder is put into 500-1500 ℃ of hydrogen furnace annealing.
2) tungsten powder after the step 1 is ground mixing, have the pressing mold of molybdenum tube that it is pressed into the flat-top cathode in using.
3) cathode of step 2 preparation is put into the hydrogen stove, when temperature reaches 1000-2000 ℃, be incubated 1-10 hour.The cathode of preparing is that 250 times microscopically is observed even pore distribution in multiplication factor.
4) cathode that step 3 is made places the aluminate powder, and in the hydrogen atmosphere, 1500-2000 ℃ flooded 1-10 minute.Floating salt behind the dipping is removed with tungsten wire cotton mass.
5) heater is installed, a complete novel dipped barium-tungsten cathode preparation finishes.
Preparation method of the present invention has the characteristic that traditional handicraft does not possess:
A, because be one-shot forming, need not go twice technology such as copper again through soaking copper in traditional overlay film dipped barium-tungsten cathode production technology, simplified operation, also shortened the production cycle simultaneously.
B, because of being compacting, rather than car system processing, the car line that does not stay because of car system on the cathode plane has guaranteed enough fineness.
C, remove copper because of not needing chemistry, so can not stay the evidence of oxide that causes because of acidifying inside and outside the spongy body of tungsten, guaranteed that spongy body of tungsten possesses fresh that contacts with active material, helping emitting material plays a role effectively, be convenient to the electronics emission, more can not stay residues such as copper only because of removing copper.
D, because of when compacting the negative electrode cavernous body be connected as a single entity with the molybdenum tube, so do not exist because of welding the improper anticathode pollution that causes with the molybdenum tube, also thereby with low cost.
E, because be at same mould compacted under, so each negative electrode (even radian is arranged) all is identical, process repeatability and good stability are suitable for multiple-beam klystron most.
Description of drawings
Fig. 1 is a dipped barium-tungsten cathode structural representation provided by the invention, among the figure: 1-tungsten powder+aluminate; 2-molybdenum tube; The 3-heater; 4-heater leg.
The dipped barium-tungsten cathode direct current emssion characteristic curve that Fig. 2 provides for the embodiment of the invention.
Embodiment
It consists of the pure tungsten powder dipped barium-tungsten cathode provided by the invention, is impregnated with aluminate in its hole.
The method of the above-mentioned dipped barium-tungsten cathode of preparation provided by the invention is:
1) adopt microparticle, highly purified pure tungsten powder puts it into 1000 ℃ of hydrogen furnace annealings, with thorough purification, and strengthens its plasticity.
2) tungsten powder after the step 1 is ground mixing, have the pressing mold of molybdenum tube that it is pressed into the flat-top cathode in using.The diameter of this flat-top cathode is 2-5mm, and thickness is 1-4mm.Its diameter of flat-top cathode of present embodiment preparation is 3.6mm, and thickness is 2mm.
3) cathode of step 2 preparation is put into the hydrogen stove, when temperature reaches 1900 ℃, be incubated 3 hours.
4) cathode that step 3 is made places the aluminate powder, and in the hydrogen atmosphere, 1600 ℃ flooded 1 minute.Floating salt behind the dipping is removed with tungsten wire cotton mass.
5) heater and heater leg are installed,, for simplicity's sake, no longer are repeated in this description because of this step is a known technology.
A complete dipped barium-tungsten cathode preparation finishes, and its structure cutaway view as shown in Figure 1; Its direct current emssion characteristic curve is referring to Fig. 2.
Claims (3)
1, a kind of dipped barium-tungsten cathode, it consists of the pure tungsten powder, is impregnated with aluminate in its hole.
2, a kind of preparation method of dipped barium-tungsten cathode according to claim 1, its key step is:
A) the pure tungsten powder is put into 500-1500 ℃ of hydrogen furnace annealing;
B) tungsten powder behind the step a is ground mixing, have the pressing mold of molybdenum tube that it is pressed into the flat-top cathode in using;
C) cathode of step b preparation is put into the hydrogen stove, when temperature reaches 1000-2000 ℃, be incubated 1-10 hour;
D) cathode that step c is made places the aluminate powder, and in the hydrogen atmosphere, 1500-2000 ℃ flooded 1-10 minute, and the floating salt behind the dipping is removed with tungsten wire cotton mass;
E) heater is installed.
3, method as claimed in claim 2 is characterized in that, the described flat-top cathode of step b diameter is 2-5mm, and thickness is 1-4mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA03123139XA CN1538484A (en) | 2003-04-17 | 2003-04-17 | Dipped barium tengsten cathode and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA03123139XA CN1538484A (en) | 2003-04-17 | 2003-04-17 | Dipped barium tengsten cathode and preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1538484A true CN1538484A (en) | 2004-10-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA03123139XA Pending CN1538484A (en) | 2003-04-17 | 2003-04-17 | Dipped barium tengsten cathode and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1538484A (en) |
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2003
- 2003-04-17 CN CNA03123139XA patent/CN1538484A/en active Pending
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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