CN1531078A - Multiple metal internal ligature arrangement with stress remove increasement and producing method thereof - Google Patents
Multiple metal internal ligature arrangement with stress remove increasement and producing method thereof Download PDFInfo
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- CN1531078A CN1531078A CNA031216498A CN03121649A CN1531078A CN 1531078 A CN1531078 A CN 1531078A CN A031216498 A CNA031216498 A CN A031216498A CN 03121649 A CN03121649 A CN 03121649A CN 1531078 A CN1531078 A CN 1531078A
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Abstract
A multilevel interconnects layout reducing stress migration and manufacturing method can join in diffusion block or vacancy sink at the large area of metal layer to keep tiny void away from causing circuit broken due to thermal stress building up. Also can make connection between the large area of metal layer and nose of small metal with convergent way to reduce discrepancy of thermal stress between the above both. Or, the number of vias of small metal noses is increased to increase resistance against thermal stress migration.
Description
Technical field
The present invention relates to the layout designs of a kind of multi-metal intra-connection (Multilevel Interconnects), particularly a kind of layout and manufacture method thereof that reduces the thermal stress migration (Stress Migration) of multi-metal intra-connection.
Background technology
Along with the progress of semiconductor technology, the size of integrated circuit component also continues microization, and when the integrated level (Integration) of integrated circuit increased, the surface of chip can't provide enough areas to make required intraconnections.Therefore, for co-operating member dwindles the intraconnections that the back is increased, present very lagre scale integrated circuit (VLSIC) (Very Large Scale Integration; VLSI) structure mostly adopts the design of multi-metal intra-connection.
In multi-metal intra-connection structure, the internal connecting layer of each layer generally includes several plain conductors, then is filled with dielectric material between plain conductor and comes the isolating metal lead.In addition, also utilize dielectric materials layer to be separated between adjacent two internal connecting layer.Because the thermal expansion coefficient difference of metal interconnecting and dielectric material is quite big, therefore when the temperature of the residing environment of multi-metal intra-connection produces bigger variation, the suffered thermal stress difference of metal interconnecting and dielectric material is also very big, has produced so-called stress migration in the multi-metal intra-connection structure and make.
Because the size of material layer can influence material layer equally because of expansion and contraction that thermal change caused, therefore the thermal stress migration also is common in the engaging of metal protuberance (Metal Tab) 102 of large-area metal level 100 and the small size of adjacent internal connecting layer, as shown in Figure 1.Please in the lump with reference to Fig. 2, Fig. 2 illustrates the profile that is obtained along the I-I hatching of Fig. 1, and only shows the corresponding relation between metal level, metal protuberance and the interlayer hole in Fig. 1.Metal protuberance 102 has interlayer hole 104, is used for electrically connecting the metal level 108 of another internal connecting layer, and its media layer window 104 is arranged in dielectric layer 110 with metal level 108, as shown in Figure 2.When the environment that is exposed to the rapid variation of temperature when the metal connection structure of Fig. 2 produces down and expands, the degree that the degree that metal level 100 expands expands much larger than metal protuberance 102, and metal protuberance 102 is passed outward; And when the metal connection structure of Fig. 2 shrinks because of thermal change produces, the degree that the degree that metal level 100 shrinks is shunk much larger than metal protuberance 102, and metal protuberance 102 is pullled to the direction of metal level 100.So, very easily lower the engaging force of interlayer hole 104 and metal level 108 on the metal protuberance 102, situation is serious, even can cause interlayer hole 104 to separate with metal level 108, thereby causes the circuit breaker of internal connection-wire structure.
In addition, when the temperature of metal level 100 rises, the small hole (not illustrating) of metal level 100 inside can spread and accumulate in the joint of interlayer hole 104 and metal protuberance 102, when the quantity of small hole gathering is increased to a certain degree, the interlayer hole 104 and the joint of metal protuberance 102 are split, even cause interlayer hole 104 and metal protuberance 102 to separate fully, and form circuit breaker, have a strong impact on the electrical reliability of internal connection-wire structure.
Summary of the invention
In above-mentioned background technology, because the area discrepancy between the metal protuberance of large-area metal level and small size is excessive, there is sizable thermal stress difference between the two and make, and then produces stress and pull, cause metal level to separate and produce and open circuit with interlayer hole.In addition, be subjected to the influence of thermal stress, the small hole that metal level produced very easily accumulates in the interface of metal level and interlayer hole and produces the crack, and metal level and interlayer hole are separated, and then causes the circuit formation of multi-metal intra-connection to open circuit.
Therefore, a purpose of the present invention just provides a kind of multi-metal intra-connection layout that reduces the thermal stress migration, and it is provided with for example dielectric trench on metal level, be used as small hole diffusion barrier or hole groove.So, can effectively avoid small hole to accumulate in interlayer hole and metal interlevel and then cause the generation in crack, even cause circuit breaker because of ordering about of thermal stress.Therefore, can promote production reliability.
Another object of the present invention just provides a kind of multi-metal intra-connection layout, and it utilizes area convergent mode to connect large-area metal layer and small size metal protuberance.Because the material area size can influence the size of thermal stress, therefore can reduce the thermal stress difference between large-area metal layer and the small size metal protuberance, and then effectively reduce the thermal stress migration.
Another purpose of the present invention just provides a kind of layout method of multi-metal intra-connection, it is on the small size metal protuberance that is connected with the large-area metal layer, increase interlayer hole quantity, share the stress migration strength that all are caused because of thermal stress difference so as to utilizing these interlayer holes.Therefore, can avoid stress to pull and cause circuit breaker, and then can improve technology reliability and product percent of pass.
According to above-described purpose, the invention provides a kind of multi-metal intra-connection layout that reduces stress migration, comprise at least: a metal level; One metal protuberance, wherein this metal protuberance engages with an edge of above-mentioned metal level; And one resistance barrier district be positioned on the above-mentioned metal level and the edge that engages with the metal protuberance of this contiguous above-mentioned metal level in resistance barrier district.Wherein, resistance barrier district is a dielectric trench, is filled with dielectric material in it.
Resistance barrier district on the metal level, but the barrier metal layer because of the small hole that heat produced, and it is other to make these small holes accumulate in this resistance barrier district.So, can prevent effectively that these small holes from accumulating in the interface of metal level and interlayer hole, and avoid between metal level and interlayer hole, producing the crack, and then reach the purpose of the electrical reliability of improving multi-metal intra-connection.
According to above-described purpose, the invention provides a kind of multi-metal intra-connection layout that reduces stress migration, comprise at least: a metal level; And one the metal protuberance engage with an edge of above-mentioned metal level, wherein the area of this metal protuberance is less than the area of metal level, and the area of this metal protuberance successively decreases gradually from the edge that engages with above-mentioned metal level.
Because the area of metal protuberance successively decreases gradually from the edge that engages with above-mentioned metal level, therefore can slow down the thermal stress difference between metal level and the metal protuberance, so, can avoid metal level to pull to separate because of thermal stress and cause circuit breaker, can guarantee the electrical reliability of multi-metal intra-connection with interlayer hole.
According to above-described purpose, the invention provides a kind of multi-metal intra-connection layout that reduces stress migration, comprise at least: a metal level; And one the metal protuberance engage with an edge of above-mentioned metal level, wherein the area of this metal protuberance is much smaller than the area of above-mentioned metal level, and this metal protuberance comprises several interlayer holes at least.These interlayer holes can be used to electrically connect above-mentioned metal level and another metal level.
By on the metal protuberance, increasing a plurality of interlayer holes, can significantly improve the ability of the anti-stress migration of metal protuberance.Therefore, can avoid stress to pull and cause metal level to separate, thereby can reach the electrical reliability that promotes multi-metal intra-connection and the purpose of product percent of pass with interlayer hole.
According to above-described purpose, the invention provides a kind of manufacture method that reduces the multi-metal intra-connection layout of stress migration, at least comprise: an internal connecting layer is provided, wherein this internal connecting layer comprises a metal level and a metal protuberance at least, and above-mentioned metal protuberance engages with an edge of metal level; Forming a dielectric layer covers on the above-mentioned internal connecting layer; And form a resistance barrier district and be arranged in dielectric layer on the metal level.
Brief Description Of Drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
In the accompanying drawing,
Fig. 1 illustrates the schematic top plan view of the section layout of existing internal connecting layer layout;
Fig. 2 illustrates the profile that is obtained along the I-I hatching of Fig. 1, only shows the corresponding relation between metal level, metal protuberance and the interlayer hole in Fig. 1;
Fig. 3 illustrates the internal connecting layer layout schematic top plan view of first preferred embodiment of the present invention;
Fig. 4 a illustrates the first kind of profile that is obtained along the II-II hatching of Fig. 3, only shows the corresponding relation between metal level, metal protuberance, interlayer hole and the resistance barrier district in Fig. 3;
Fig. 4 b illustrates the second kind of profile that is obtained along the II-II hatching of Fig. 3;
Fig. 4 c illustrates the profile of the internal connecting layer layout in the multiple resistance barrier of having of the present invention's first preferred embodiment district;
Fig. 4 d illustrates the profile of the internal connecting layer layout in the multiple resistance barrier of having of the present invention's first preferred embodiment district;
Fig. 5 illustrates the schematic top plan view of the internal connecting layer layout of second preferred embodiment of the present invention;
Fig. 6 illustrates the profile that is obtained along the III-III hatching of Fig. 5, only shows the corresponding relation between metal level, metal protuberance and the interlayer hole in Fig. 5;
Fig. 7 illustrates the schematic top plan view of the internal connecting layer layout of the 3rd preferred embodiment of the present invention; And
Fig. 8 illustrates the profile that is obtained along the IV-IV hatching of Fig. 7, only shows the corresponding relation between metal level, metal protuberance and the interlayer hole in Fig. 7.
Embodiment
The present invention discloses a kind of multi-metal intra-connection layout and manufacture method thereof that reduces stress migration, and the diffusion barrier of small hole can be set on large-area metal level, accumulates on the composition surface of interlayer hole and metal level to avoid small hole.Perhaps available convergent mode forms small size metal protuberance, to relax the area discrepancy of large-area metal layer and metal protuberance.In addition, also can on small size metal protuberance, increase the quantity of interlayer hole, be used for the impact of stress is disperseed.Therefore, can increase the reliability of multi-metal intra-connection, and then reach the purpose that promotes product percent of pass.In order to make narration of the present invention more detailed and complete, can be with reference to the diagram of following description and cooperation Fig. 3 to Fig. 8.
Please refer to Fig. 3, Fig. 3 illustrates the schematic top plan view of the internal connecting layer layout of first preferred embodiment of the present invention.The production method of this intraconnections layout please in the lump with reference to Fig. 4 a, at first provide internal connecting layer 208, and this internal connecting layer 208 comprises metal protuberance 202 and metal level 200 at least, one side and being connected of metal protuberance 202 and metal level 200.Wherein, the area of metal level 200 is big more than the area of metal protuberance 202.Then, formation dielectric layer 212 covers on the metal level 200 and metal protuberance 202 of internal connecting layer 208.Form interlayer hole 204 and metal level 210 again in the dielectric layer on metal protuberance 202 212, and form the resistance barrier district 206 of running through dielectric layer 212 in the dielectric layer on metal level 200 212, shown in Fig. 4 a.Wherein, interlayer hole 204 can make this internal connecting layer 208 electrically connect with the metal level 210 of its internal connecting layer of facing mutually.The position in above-mentioned resistance barrier district 206 is preferably and is adjacent to one side that metal level 200 engages with metal protuberance 202, and the scope in resistance barrier district 206 is preferably the scope that can comprise metal protuberance 202.The material in resistance barrier district 206 can be identical with the material of dielectric layer 212, also can be different with the material of dielectric layer 212, only need just can with 212 formation of dielectric layer interface in resistance barrier district 206.The shape in resistance barrier district 206 can for example be strip, cross, square, L shaped, shaped as frame or Z-shaped or the like, is not limited to resistance barrier shown in Figure 3 and distinguishes 206 strip.
In the present invention, dielectric layer 212 can be run through as shown in Fig. 4 a in resistance barrier district 206, also can provide as only extending upwardly to the part of dielectric layer 212 and the resistance barrier that do not run through dielectric layer 212 distinguishes 214 from metal level 200 shown in Fig. 4 b.In addition, please refer to Fig. 4 c, a plurality of resistance barrier districts 216 of running through dielectric layer 212 also can be set in dielectric layer 212; Or only extend upwardly to the part of dielectric layer 212 and do not run through the resistance barrier district 218 of dielectric layer 212 from metal level 200 as a plurality of shown in Fig. 4 d, the present invention does not limit at this.
Please referring again to Fig. 3, in internal connecting layer 208, when metal level 200 is heated, thermal stress can cause small hole diffusion, when these small holes spread at the interlayer hole 204 towards metal protuberance 202, resistance barrier district 206 can significantly increase the evolving path of small hole just as diffusion barrier.In addition, owing to the highly unsettled zone of interface genus that hinders between barrier district 206 and the metal level 200, the formation free energy hinders limit (Free-energy Trap) and small hole resistance is limit firmly, as the hole groove.So, can stop the diffusion of small hole and accumulate between the interface of interlayer hole 204 and metal protuberance 202, thereby avoid the intraconnections interlayer hole to separate, and then prevent that interconnect wiring from forming and open circuit, reach the purpose of the reliability that improves multi-metal intra-connection with another internal connecting layer.
Please refer to Fig. 5, Fig. 5 illustrates the schematic top plan view of the internal connecting layer layout of second preferred embodiment of the present invention.The production method of this intraconnections layout, please in the lump with reference to Fig. 6, internal connecting layer 310 at first is provided, and wherein this internal connecting layer 310 comprises metal level 300 and metal protuberance 306 at least, and the area of metal level 300 and width w3 are all greater than the area and the width of metal protuberance 306.In addition, metal protuberance 306 is made of with second portion 304 first 302, and wherein the area of first 302 is greater than the area of second portion 304, and the width w2 of first 302 is greater than the width w1 of second portion 304.One side of the first 302 that area is bigger in the metal protuberance 306 is connected with one side of metal level 300, and the another side of the first 302 of metal protuberance 306 then connects the less second portion 304 of area in the metal protuberance 306.Then, formation dielectric layer 314 covers on the metal level 300 and metal protuberance 306 of internal connecting layer 310.Utilize again and form interlayer hole 308 in the dielectric layer 314 of mode on the second portion 304 of metal protuberance 306 of for example photoetching, etching, deposition and cmp, and form the metal level 312 of another internal connecting layer in the dielectric layer on interlayer hole 308 314, as shown in Figure 6.Wherein, interlayer hole 308 can be used to electrically connect the internal connecting layer 310 and the metal level 312 of internal connecting layer 310 internal connecting layer of facing mutually therewith.
What should note a bit is, in second preferred embodiment of the present invention, though metal protuberance 306 only is made of with second portion 304 first 302 that two areas and width all have a drop, but, being designed to area and taper in width mode of metal protuberance 306 of the present invention just makes the area of metal protuberance 306 and width from beginning to successively decrease gradually just passable with metal level 300 jointing edges.Metal protuberance 306 is not limited to how many level parts be made of, and the area of metal protuberance 306 and width also can be smooth-going successively decreasing.
Because metal protuberance 306 areas and width are from successively decreasing gradually with metal level 300 joints, therefore can effectively slow down the area discrepancy of 306 of the metal protuberances of large-area metal level 300 and small size, and then the stress difference distance of 306 of attenuating metal level 300 and metal protuberances.So, can reach the purpose of the stress migration that reduces multi-metal intra-connection, and then promote the reliability of multi-metal intra-connection, and increase product percent of pass.
Please refer to Fig. 7, Fig. 7 illustrates the schematic top plan view of the internal connecting layer layout of the 3rd preferred embodiment of the present invention.The production method of this intraconnections layout please in the lump with reference to Fig. 8, at first provides internal connecting layer 408, and this internal connecting layer 408 comprises metal protuberance 402 and metal level 400 at least, one side and being connected of metal protuberance 402 and metal level 400.Wherein, the area of metal level 400 is big more than the area of metal protuberance 402.Then, formation dielectric layer 412 covers on the metal level 400 and metal protuberance 402 of internal connecting layer 408.Utilize again and form interlayer hole 404 and interlayer hole 406 in the dielectric layer 412 of mode on metal protuberance 402 of for example photoetching, etching, deposition and cmp, and form the metal level 410 of another internal connecting layer in the dielectric layer 412 on interlayer hole 404 and interlayer hole 406, as shown in Figure 8.Wherein, interlayer hole 404 and interlayer hole 406 can be used to electrically connect the internal connecting layer 408 and the metal level 410 of internal connecting layer 408 internal connecting layer of facing mutually therewith.
By the setting of interlayer hole 404 and interlayer hole 406, the thermal stress of 402 of metal protuberances that not only can share large-area metal level 400 and small size is poor, and can increase the structural strength of internal connection-wire structure.Therefore, can avoid interlayer hole to separate to form with another internal connecting layer that electrically connects with passing because of pullling of thermal stress opens circuit.Therefore, can effectively reduce the stress migration and the electromigration of multi-metal intra-connection, and lower the possibility that the multi-metal intra-connection generation is opened circuit, thereby significantly increase production reliability and qualification rate, reach the purpose that promotes product quality.
Though in the 3rd preferred embodiment of the present invention, the interlayer hole quantity on the metal protuberance 402 only is provided with two,, the quantity of the interlayer hole of metal protuberance of the present invention can be not limited to two, but need more than two at least according to process requirements row increase again.
More noticeablely be, above-described three kinds of embodiment can implement according to the process requirements collocation, the design of the first embodiment of the present invention just can combine with the design of second embodiment, or combine with the design of the 3rd embodiment, and the design of second embodiment also can combine with the design of the 3rd embodiment, even can be simultaneously in conjunction with the layout designs of three embodiment, more can effectively reduce the stress migration and the electromigration of multi-metal intra-connection, thereby reach the purpose of the reliability that promotes multi-metal intra-connection.
In sum, an advantage of the present invention is exactly because by the hole diffusion barrier is set on metal level, can effectively avoid small hole to accumulate in interlayer hole and metal interlevel and causes circuit breaker.Therefore, can reach the purpose that promotes production reliability and qualification rate.
Another advantage of the present invention is exactly because utilize area convergent mode that small size metal protuberance is set, and can relax the thermal stress difference between large-area metal layer and the small size metal protuberance.Therefore, can effectively reduce stress migration, reach the purpose that promotes product quality.
Another advantage of the present invention is exactly because of the interlayer hole quantity on the metal protuberance that increases small size, can utilize these interlayer holes to share the stress migration strength that all are caused because of thermal stress difference.Therefore, can effectively avoid circuit breaker, reach the purpose that improves the electrical stability of product.
Be understandable that; for the person of ordinary skill of the art; can make other various corresponding changes and distortion according to technical scheme of the present invention and technical conceive, and all these changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
1, a kind of multi-metal intra-connection layout that reduces stress migration comprises at least:
One metal level;
One metal protuberance, wherein this metal protuberance engages with an edge of this metal level; And
One resistance barrier district is positioned on this metal level.
2, the multi-metal intra-connection layout of reduction stress migration according to claim 1 wherein also comprise an interlayer hole at least on this metal protuberance, and this interlayer hole can be used to electrically connect another metal level.
3, the multi-metal intra-connection layout of reduction stress migration according to claim 1 wherein have several interlayer holes on this metal protuberance, and these interlayer holes can be used to electrically connect another metal level.
4, the multi-metal intra-connection layout of reduction stress migration according to claim 1, wherein the area of this metal level is greater than the area of this metal protuberance, and the area of this metal protuberance phases down from this edge of this metal level.
5, the multi-metal intra-connection layout of reduction stress migration according to claim 1, wherein this resistance barrier district is a dielectric trench.
6, the multi-metal intra-connection layout of reduction stress migration according to claim 1 wherein should resistance hinder this edge of distinguishing contiguous this metal level.
7, a kind of manufacture method that reduces the multi-metal intra-connection layout of stress migration comprises at least:
One internal connecting layer is provided, and wherein this internal connecting layer comprises a metal level and a metal protuberance at least, and this metal protuberance engages with an edge of this metal level;
Forming a dielectric layer covers on this internal connecting layer; And
Form a resistance barrier and distinguish this dielectric layer that is arranged on this metal level.
8, the manufacture method of the multi-metal intra-connection layout of reduction stress migration according to claim 7 wherein should engage with this metal level in resistance barrier district.
9, the manufacture method of the multi-metal intra-connection layout of reduction stress migration according to claim 7, wherein when forming the step in this resistance barrier district, at least comprise that also forming at least one interlayer hole is arranged in this dielectric layer on this metal protuberance and another metal level and is arranged in this dielectric layer on this interlayer hole, and this interlayer hole can be used to electrically connect this another metal level and this internal connecting layer.
10, the manufacture method of the multi-metal intra-connection layout of reduction stress migration according to claim 7, wherein the area of this metal level is greater than the area of this metal protuberance, and the area of this metal protuberance phases down from this edge of this metal level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031216498A CN100418219C (en) | 2003-03-13 | 2003-03-13 | Multiple metal internal ligature arrangement with stress remove increasement and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031216498A CN100418219C (en) | 2003-03-13 | 2003-03-13 | Multiple metal internal ligature arrangement with stress remove increasement and producing method thereof |
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| Publication Number | Publication Date |
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| CN1531078A true CN1531078A (en) | 2004-09-22 |
| CN100418219C CN100418219C (en) | 2008-09-10 |
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| CNB031216498A Expired - Lifetime CN100418219C (en) | 2003-03-13 | 2003-03-13 | Multiple metal internal ligature arrangement with stress remove increasement and producing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701246A (en) * | 2013-12-10 | 2015-06-10 | 展讯通信（上海）有限公司 | Chip, chip formation method, packaged finished product and method for increasing yield of packaged finished product |
| CN104701245A (en) * | 2013-12-10 | 2015-06-10 | 展讯通信（上海）有限公司 | Chip formation method and method for increasing yield of packaged finished product |
| CN108847411A (en) * | 2018-06-22 | 2018-11-20 | 武汉新芯集成电路制造有限公司 | A kind of interconnecting construction enhancing stress migration reliability |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4988423A (en) * | 1987-06-19 | 1991-01-29 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating interconnection structure |
| JPH10308569A (en) * | 1997-05-02 | 1998-11-17 | Shinko Electric Ind Co Ltd | Wiring board and its production |
| US6465084B1 (en) * | 2001-04-12 | 2002-10-15 | International Business Machines Corporation | Method and structure for producing Z-axis interconnection assembly of printed wiring board elements |
| CN2746534Y (en) * | 2004-10-13 | 2005-12-14 | 台湾积体电路制造股份有限公司 | Multilevel metal interconnects line distribution for reducing stress migration |
-
2003
- 2003-03-13 CN CNB031216498A patent/CN100418219C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701246A (en) * | 2013-12-10 | 2015-06-10 | 展讯通信（上海）有限公司 | Chip, chip formation method, packaged finished product and method for increasing yield of packaged finished product |
| CN104701245A (en) * | 2013-12-10 | 2015-06-10 | 展讯通信（上海）有限公司 | Chip formation method and method for increasing yield of packaged finished product |
| CN104701246B (en) * | 2013-12-10 | 2018-03-23 | 展讯通信（上海）有限公司 | Chip and forming method, encapsulation finished product, the method for improving encapsulation finished product yield |
| CN104701245B (en) * | 2013-12-10 | 2018-07-31 | 展讯通信（上海）有限公司 | Method for forming chip, the method for improving chip package finished product yield |
| CN108847411A (en) * | 2018-06-22 | 2018-11-20 | 武汉新芯集成电路制造有限公司 | A kind of interconnecting construction enhancing stress migration reliability |
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| CN100418219C (en) | 2008-09-10 |
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