CN1527649A - Transparent electroluminescence device driven with active matrix - Google Patents
Transparent electroluminescence device driven with active matrix Download PDFInfo
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- CN1527649A CN1527649A CNA031511465A CN03151146A CN1527649A CN 1527649 A CN1527649 A CN 1527649A CN A031511465 A CNA031511465 A CN A031511465A CN 03151146 A CN03151146 A CN 03151146A CN 1527649 A CN1527649 A CN 1527649A
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Abstract
The present invention relates to display device, and is especially one kind of transparent electroluminescence device driven with active matrix. The device consists of active device and electroluminescent device, and has electroluminescent device, pixel delectrode, luminescent layer, insulating layer and the other electrode successively on the substrate. The transparent electroluminescent device has transparent semiconductor material as active layer and has at least one electrode or active layer made of transparent material except the transparent pixel electrode, and this is favorable to raising opening rate. The present invention has the advantages of no excited electron-hole pair in the active layer to affect the holding characteristic of the active device and raised opening rate.
Description
Affiliated technical field
The present invention relates to a kind of display device, refer to a kind of transparent electroluminescence device driven with active matrix especially.
Background technology
Because there is the shortcoming of aspects such as cross-talk, duty ratio in the passive matrix type of drive, be difficult for obtaining high-quality displayed image, can't satisfy the needs of the development of information age to display terminal, the driven with active matrix mode has been widely used in various demonstrations field.
Current, the active layer material of driven with active matrix mode mainly is made of amorphous silicon and polysilicon, when the illumination of sending when extraneous light or luminescent device itself is mapped to amorphous silicon and polycrystalline silicon material, meeting excitation electron-hole in active layer is right, off-resistances is reduced, cause that active device closes the deterioration of step response, influence the retention performance of active device, the variation of image flicker or gray scale can take place when serious.
The LCD of driven with active matrix mainly adopts black matrix to address this problem, this method is at Japan Patent JP57-18364, JP61-116324, JP4-225328, JP5-107550 and JP5-173183 had narration, deceive of the influence of the process of matrix in order to reduce making to active device, general black matrix is produced on the opposing substrate of active matrix, in order to reduce influence to the box precision, the size of black matrix generally is greater than active device, introduces black matrix like this and can reduce aperture opening ratio largely.Here, aperture opening ratio is defined as: in unit pixel, effective display area accounts for the percentage of whole unit elemental area.
In the display of organic electroluminescence of driven with active matrix, if adopt the method for common bottom-emission, represent the unit pixel generalized section of display of organic electroluminescence of the driven with active matrix of this bottom-emission as Fig. 2, for simplicity, only draw an active device.In the Amoled including circuit to supply zero data of this bottom-emission, the light that organic electroluminescence device itself sends can shine active device by waveguide, and this had narration at Chinese patent 99803261.1.Chinese patent 99803261.1 proposes to adopt the method for a kind of circuit and light non-transmittable layers to solve the problems referred to above, but this method has increased the complexity of device.In the display of organic electroluminescence that thin film transistor active matrix drives, because the organic electroluminescent employing is current drives, unit pixel will comprise two TFT and power line at least, has more reduced the demonstration aperture opening ratio.General in the design of unit pixel, even adopt two TFT (Thin Film Transistor) to drive, also be difficult to reach 50% aperture opening ratio.
The unit pixel generalized section of display of organic electroluminescence of representing the driven with active matrix of top light emitting as Fig. 3, the method of employing top light emitting can solve the problem of aperture opening ratio, can prevent that again illumination that organic electroluminescence device sends is mapped to the active layer material of active device, but, the methods such as sputter of making the employing of ITO (Indium Tin Oxide) film can exert an influence to the luminescent layer of organic electroluminescence device, influence the performance of electroluminescent device.
Summary of the invention
In order to overcome above-mentioned weak point, main purpose of the present invention aims to provide a kind of with the transparent electro-luminescence display device of transparent semiconductor material as the driven with active matrix of active layer.
Another purpose of the present invention is to improve the aperture opening ratio of display device.
The technical problem to be solved in the present invention is: the technical problems such as retention performance that how to improve the aperture opening ratio and the raising display device of display device.
The technical solution adopted for the present invention to solve the technical problems is: this device is made up of active device and electroluminescent device, and another electrode of electroluminescent device, pixel capacitors, luminescent layer, insulating barrier and electroluminescent device is arranged successively on the upper strata of substrate.
The material of the active device active layer of the electroluminescent device of described transparent driven with active matrix is the active matrix of transparent material, and this active device is a thin-film transistor, and any one electrode of active device and the material of various lead-in wires are transparent material.
The electroluminescent device of the electroluminescent device of described transparent driven with active matrix is inorganic light-emitting device or organic luminescent device or polymer light-emitting device.
The material of the storage capacitance of the active matrix of the electroluminescent device of described transparent driven with active matrix and the various lead-in wires of active matrix is a transparent material.
The transparent material of the electroluminescent device of described transparent driven with active matrix is the semi-conducting material of intrinsic material or doping.
The transparent range of definition of the electroluminescent device of described transparent driven with active matrix can be at any wavelength of visible waveband or at any wavelength of invisible wave band.
A kind of manufacture method of electroluminescent device of transparent driven with active matrix, be with the transparent semiconductor material as active layer, its job step is:
The making active matrix of the manufacture method of the electroluminescent device of described transparent driven with active matrix is divided into the manufacture method of the thin-film transistor of the thin-film transistor of reciprocal cross stack structure and quadrature stack structure.
The manufacture method of the thin-film transistor of the reciprocal cross stack structure of the manufacture method of the electroluminescent device of described transparent driven with active matrix, its job step is:
The heavily doped transparent material of step 4., the system ohmic contact layer;
The heavily doped transparent material of step 5., making source, drain electrode;
Step 6. photoetching forms the active layer raceway groove;
Step 7. is made protective layer with transparent material;
Step 8. photoetching forms via hole;
Step 9. is made planarization layer, causes the short circuit of electroluminescent device with the part that prevents the thin-film transistor projection;
Step 10. is made pixel capacitors.
The manufacture method of the thin-film transistor of the quadrature stack structure of the manufacture method of the electroluminescent device of described transparent driven with active matrix, its job step is:
The heavily doped transparent material of step 6., making source, drain electrode;
Step 7. adopts transparent material to make protective layer;
Step 8. photoetching forms via hole;
Step 9. is made planarization layer;
Step 10. is made pixel capacitors.
Active layer manufacture method of the present invention is as running into: when the size of display is big, for reducing the problem of signal delay, can also adopt following several scheme:
1). the materials such as intrinsic GaN, ZnO that adopt methods such as sputter, MOCVD to make are made the active layer of thin-film transistor, adopt materials such as metal Ta, Cr, Mo, Al or other Metal and Alloys to make grid, source and the drain electrode of thin-film transistor and holding wire, scan line, power line, storage capacitance.At last, make electroluminescent device.
2). the materials such as intrinsic GaN, ZnO that adopt methods such as sputter, MOCVD to make are made the active layer of thin-film transistor, adopt heavily doped GaN, ZnO material to make grid, source and the drain electrode of thin-film transistor, adopt holding wire, scan line, power line, the storage capacitance of material active matrixs such as metal Ta, Cr, Mo, Al, promptly make the bright thin-film transistor of full impregnated, and the lead material of active matrix is a metal material.At last, make electroluminescent device.
3). the intrinsic GaN, the ZnO that adopt methods such as sputter, MOCVD to make.Make the active layer of thin-film transistor Deng material, adopt the materials such as heavily doped GaN, ZnO of band metal grill to make grid, source and the drain electrode of thin-film transistor and holding wire, scan line, power line, storage capacitance.Like this, metal grill can reduce the resistivity of materials such as the heavily doped GaN of heavy doping, ZnO.At last, make electroluminescent device.
The invention has the beneficial effects as follows: provide a kind of with the electroluminescent device of transparent semiconductor material as the driven with active matrix of active layer, can be in active layer excitation electron-hole right, do not influence the retention performance of active device; Can improve aperture opening ratio, if adopt transparent material to make the lead-in wire of active layer, electrode and the matrix of active device, there is not the problem of aperture opening ratio basically in the display device of driven with active matrix.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Accompanying drawing 1 is the unit pixel generalized section of electroluminescent display of the present invention;
Accompanying drawing 2 is unit pixel generalized sections of display of organic electroluminescence of the bottom-emission driven with active matrix of prior art;
Accompanying drawing 3 is unit pixel generalized sections of display of organic electroluminescence of the top light emitting driven with active matrix of prior art;
Label declaration in the accompanying drawing:
The 1-substrate;
The 2-pixel capacitors;
The 3-luminescent layer;
Another electrode of 4-electroluminescent device;
The 5-insulating barrier;
Embodiment
See also shown in the accompanying drawing 1, device of the present invention is made up of active device and electroluminescent device, and another electrode 4 of electroluminescent device, pixel capacitors 2, luminescent layer 3, insulating barrier 5 and electroluminescent device is arranged successively on the upper strata of substrate 1.
The material of the active device active layer of the electroluminescent device of described transparent driven with active matrix is the active matrix of transparent material, and this active device is a thin-film transistor, and any one electrode of active device and the material of various lead-in wires are transparent material.
The electroluminescent device of the electroluminescent device of described transparent driven with active matrix is inorganic light-emitting device or organic luminescent device or polymer light-emitting device.
The material of the storage capacitance of the active matrix of the electroluminescent device of described transparent driven with active matrix and the various lead-in wires of active matrix is a transparent material.
The transparent material of the electroluminescent device of described transparent driven with active matrix is the semi-conducting material of intrinsic material or doping.
The transparent range of definition of the electroluminescent device of described transparent driven with active matrix can be at any wavelength of visible waveband or at any wavelength of invisible wave band.
A kind of manufacture method of electroluminescent device of transparent driven with active matrix, be with the transparent semiconductor material as active layer, its job step is:
The making active matrix of the manufacture method of the electroluminescent device of described transparent driven with active matrix is divided into the manufacture method of the thin-film transistor of the thin-film transistor of reciprocal cross stack structure and quadrature stack structure.
The manufacture method of the thin-film transistor of the reciprocal cross stack structure of the manufacture method of the electroluminescent device of described transparent driven with active matrix mainly may further comprise the steps:
1). adopt heavily doped transparent material to make gate electrode; Adopting heavily doped purpose mainly is to reduce the resistivity of gate electrode;
2). by changing the stoicheiometry of material, increase the insulation characterisitic of transparent material, make the grid electrode insulating layer of transparent material, this step also can realize by the insulating barrier of common thin-film transistor, as silicon nitride (SiNx) etc.;
3). adopt transparent material to make active layer, mainly adopt the semi-conducting material of intrinsic, as ZnO, GaN, CdSe, ZnSe, ZnN, SiC etc.;
4). adopt heavily doped transparent material, ohmic contact layer;
5). adopt heavily doped transparent material, making source, drain electrode;
6). photoetching forms the active layer raceway groove;
7). adopt transparent material to make protective layer, with the protective film transistor;
8). photoetching forms via hole;
9). make planarization layer, cause the short circuit of electroluminescent device with the part that prevents the thin-film transistor projection;
10). make pixel capacitors.
The manufacture method of the thin-film transistor of the quadrature stack structure of the manufacture method of the electroluminescent device of described transparent driven with active matrix, the step of employing and reciprocal cross stack structure are basic identical, comprising:
1). adopt transparent material to make active layer, mainly adopt the semi-conducting material of intrinsic, as ZnO, GaN etc.;
2). by changing stoicheiometry, make the grid electrode insulating layer of transparent material;
3). adopt heavily doped transparent material to make gate electrode;
4). by changing stoicheiometry, make transparent insulating barrier again;
5). photoetching forms via hole;
6). adopt heavily doped transparent material, making source, drain electrode;
7). adopt transparent material to make protective layer, with the protective film transistor;
8). photoetching forms via hole;
9). make planarization layer;
10). make pixel capacitors.
Embodiments of the invention 1:
Adopt the active layer of intrinsic GaN material thin-film transistor, the hearth electrode of the gate electrode of metal Ta material thin-film transistor, scan line, storage capacitance, Metal Cr material source and drain electrode and holding wire, power line, each layer insulating of thin-film transistor is made by SiNx, makes ITO pixel capacitors, electroluminescence layer and metallic cathode again.
Example 2 of the present invention:
Adopt the active layer of intrinsic ZnO material thin-film transistor, grid, source and the drain electrode of heavily doped ZnO material thin-film transistor and holding wire, scan line and power line are made heavily doped ZnO pixel capacitors, electroluminescence layer and metallic cathode again.
Example 3 of the present invention:
Adopt the active layer of intrinsic ZnO material thin-film transistor, grid, source and the drain electrode of heavily doped ZnO material thin-film transistor and holding wire, scan line and power line, make ITO pixel capacitors, electroluminescence layer and ITO pixel capacitors again, produce transparent electroluminescent display panel fully like this.This electroluminescent display not only can be watched from the two sides, and does not have the problem of aperture opening ratio.
Example 4 of the present invention:
Adopt the manufacture method of active matrix among above any embodiment, the structure of electroluminescent device is: ITO/NPB/Alq/Mg:Ag.ITO makes transparent anode, and TPD makes hole transmission layer, and Alq makes electron transfer layer and luminescent layer, and the MgAg alloy is done metallic cathode, and ITO makes of the method for reactive sputtering, and other several layer films have the method for evaporation to make.
Example 5 of the present invention:
Adopt the manufacture method of active matrix among above any embodiment, the structure of electroluminescent device is: ITO/PEDOT/PPV/Ca/Al.ITO makes transparent anode, and PEDOT makes hole transmission layer, and PPV makes electron transfer layer and luminescent layer, and metal Ca/Al does metallic cathode, and PEDOT film and PPV film are with being coated with or the method for inkjet printing is made, and metal Ca/Al electrode is made of the method for evaporation.
Example 6 of the present invention:
Adopt the manufacture method of active matrix among above any embodiment, electroluminescent device is an inorganic electroluminescence device, as the GaN quantum well devices.
Claims (10)
1, a kind of electroluminescent device of transparent driven with active matrix, this device has active device and electroluminescent device, it is characterized in that: another electrode that electroluminescent device, pixel capacitors, luminescent layer, insulating barrier and electroluminescent device are arranged successively on the upper strata of substrate.
2. the electroluminescent device of transparent driven with active matrix according to claim 1, it is characterized in that: the material of described active device active layer is the active matrix of transparent material, this active device is a thin-film transistor, and the material of its electrode and lead-in wire is a transparent material.
3. the electroluminescent device of transparent driven with active matrix according to claim 1, it is characterized in that: described electroluminescent device is inorganic light-emitting device or organic luminescent device or polymer light-emitting device.
4. the electroluminescent device of transparent driven with active matrix according to claim 2 is characterized in that: the material of the storage capacitance of described active matrix and matrix lead-in wire is a transparent material.
5. the electroluminescent device of transparent driven with active matrix according to claim 2, it is characterized in that: described transparent material is the semi-conducting material of intrinsic material or doping.
6. want the electroluminescent device of 2 described transparent driven with active matrix according to right, it is characterized in that: described transparent scope is the wavelength of visible waveband or invisible wave band.
7. the manufacture method of the electroluminescent device of a transparent driven with active matrix, it is characterized in that: as active layer, its job step is with the transparent semiconductor material:
Step 1. is made active matrix;
Step 2. is made insulating barrier;
Step 3. is made luminescent layer: luminescent layer can be used organic material, also can use inorganic material;
Step 4. is made another electrode of electroluminescent device.
8. want the manufacture method of the electroluminescent device of 7 described transparent driven with active matrix according to right, it is characterized in that: described making active matrix is divided into the manufacture method of the thin-film transistor of the thin-film transistor of reciprocal cross stack structure and quadrature stack structure.
9. want the manufacture method of the electroluminescent device of 8 described transparent driven with active matrix according to right, it is characterized in that: the manufacture method of the thin-film transistor of described reciprocal cross stack structure, its job step is:
Step 1. is made gate electrode with heavily doped transparent material;
Step 2. increases the insulation characterisitic of transparent material by changing the stoicheiometry of material, makes the grid electrode insulating layer of transparent material;
Step 3. is made active layer with transparent material, mainly adopts the semi-conducting material of intrinsic;
The heavily doped transparent material of step 4., the system ohmic contact layer;
The heavily doped transparent material of step 5., making source, drain electrode;
Step 6. photoetching forms the active layer raceway groove;
Step 7. is made protective layer with transparent material;
Step 8. photoetching forms via hole;
Step 9. is made planarization layer, causes the short circuit of electroluminescent device with the part that prevents the thin-film transistor projection;
Step 10. is made pixel capacitors.
10. want the manufacture method of the electroluminescent device of 8 described transparent driven with active matrix according to right, it is characterized in that: the manufacture method of the thin-film transistor of described quadrature stack structure, its job step is:
Step 1. is made active layer with transparent material;
Step 2. is made the grid electrode insulating layer of transparent material by changing the stoicheiometry of material;
Step 3. is made gate electrode with heavily doped transparent material;
Step 4. is made transparent insulating barrier again by changing the stoicheiometry of material;
Step 5. photoetching forms via hole;
The heavily doped transparent material of step 6., making source, drain electrode;
Step 7. adopts transparent material to make protective layer;
Step 8. photoetching forms via hole;
Step 9. is made planarization layer;
Step 10. is made pixel capacitors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031511465A CN1527649A (en) | 2003-09-23 | 2003-09-23 | Transparent electroluminescence device driven with active matrix |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA031511465A CN1527649A (en) | 2003-09-23 | 2003-09-23 | Transparent electroluminescence device driven with active matrix |
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| CN1527649A true CN1527649A (en) | 2004-09-08 |
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| CNA031511465A Pending CN1527649A (en) | 2003-09-23 | 2003-09-23 | Transparent electroluminescence device driven with active matrix |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102648525A (en) * | 2009-12-04 | 2012-08-22 | 株式会社半导体能源研究所 | Display device |
| CN106816558A (en) * | 2017-04-14 | 2017-06-09 | 京东方科技集团股份有限公司 | Top radiation organic EL display panel, its preparation method and display device |
-
2003
- 2003-09-23 CN CNA031511465A patent/CN1527649A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102648525A (en) * | 2009-12-04 | 2012-08-22 | 株式会社半导体能源研究所 | Display device |
| CN106816558A (en) * | 2017-04-14 | 2017-06-09 | 京东方科技集团股份有限公司 | Top radiation organic EL display panel, its preparation method and display device |
| CN106816558B (en) * | 2017-04-14 | 2019-09-03 | 京东方科技集团股份有限公司 | Top radiation organic EL display panel, its production method and display device |
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