CN1516188A - 磁性随机存取存储器的铁磁共振切换 - Google Patents
磁性随机存取存储器的铁磁共振切换 Download PDFInfo
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- CN1516188A CN1516188A CNA2003101215708A CN200310121570A CN1516188A CN 1516188 A CN1516188 A CN 1516188A CN A2003101215708 A CNA2003101215708 A CN A2003101215708A CN 200310121570 A CN200310121570 A CN 200310121570A CN 1516188 A CN1516188 A CN 1516188A
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- magnetic
- current
- resonant frequency
- magnetoresistive cell
- electric wire
- Prior art date
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- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 83
- 230000005350 ferromagnetic resonance Effects 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 5
- 230000005641 tunneling Effects 0.000 claims description 5
- 230000005415 magnetization Effects 0.000 description 20
- 230000004888 barrier function Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000005294 ferromagnetic effect Effects 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 241001581440 Astroides Species 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/335,671 US6791868B2 (en) | 2003-01-02 | 2003-01-02 | Ferromagnetic resonance switching for magnetic random access memory |
US10/335,671 | 2003-01-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1516188A true CN1516188A (zh) | 2004-07-28 |
CN100347785C CN100347785C (zh) | 2007-11-07 |
Family
ID=32680849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101215708A Expired - Lifetime CN100347785C (zh) | 2003-01-02 | 2003-12-22 | 磁性随机存取存储器设备及在其中切换存储状态的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6791868B2 (zh) |
CN (1) | CN100347785C (zh) |
TW (1) | TWI284901B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102169728A (zh) * | 2010-02-26 | 2011-08-31 | 希捷科技有限公司 | 磁场检测设备及其使用方法 |
CN101465156B (zh) * | 2007-12-17 | 2011-12-21 | 株式会社日立制作所 | 信息存储装置和存储介质 |
CN103872242A (zh) * | 2012-12-17 | 2014-06-18 | 国际商业机器公司 | 热自旋扭矩传输磁阻随机存取存储器 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10118197C2 (de) * | 2001-04-11 | 2003-04-03 | Infineon Technologies Ag | Integrierte magnetoresistive Halbleiterspeicheranordnung und Verfahren zum Beschreiben derselben |
US6909631B2 (en) * | 2003-10-02 | 2005-06-21 | Freescale Semiconductor, Inc. | MRAM and methods for reading the MRAM |
CN100429721C (zh) * | 2004-04-01 | 2008-10-29 | 中国科学院物理研究所 | 一种基于垂直电流写入的磁随机存取存储器及其控制方法 |
US7576956B2 (en) * | 2004-07-26 | 2009-08-18 | Grandis Inc. | Magnetic tunnel junction having diffusion stop layer |
US7224601B2 (en) * | 2005-08-25 | 2007-05-29 | Grandis Inc. | Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element |
US7777261B2 (en) | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7859034B2 (en) * | 2005-09-20 | 2010-12-28 | Grandis Inc. | Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer |
US7430135B2 (en) * | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
US20070246787A1 (en) * | 2006-03-29 | 2007-10-25 | Lien-Chang Wang | On-plug magnetic tunnel junction devices based on spin torque transfer switching |
US7851840B2 (en) * | 2006-09-13 | 2010-12-14 | Grandis Inc. | Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier |
US7872905B2 (en) * | 2006-12-19 | 2011-01-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for write enable and inhibit for high density spin torque three dimensional (3D) memory arrays |
US7652915B2 (en) * | 2006-12-19 | 2010-01-26 | Hitachi Global Storage Technologies Netherlands B.V. | High density spin torque three dimensional (3D) memory arrays addressed with microwave current |
US7929349B2 (en) * | 2007-02-28 | 2011-04-19 | Samsung Electronics Co., Ltd. | Method of operating nonvolatile memory device |
US8018781B2 (en) * | 2007-02-28 | 2011-09-13 | Samsung Electronics, Co., Ltd. | Method of operating nonvolatile memory device |
US7957179B2 (en) * | 2007-06-27 | 2011-06-07 | Grandis Inc. | Magnetic shielding in magnetic multilayer structures |
US7982275B2 (en) * | 2007-08-22 | 2011-07-19 | Grandis Inc. | Magnetic element having low saturation magnetization |
US8416539B2 (en) * | 2008-08-07 | 2013-04-09 | HGST Netherlands B.V. | Magnetic field sensing system using spin-torque diode effect |
US7894248B2 (en) | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
US8199553B2 (en) * | 2009-12-17 | 2012-06-12 | Hitachi Global Storage Technologies Netherlands B.V. | Multilevel frequency addressable field driven MRAM |
US8508973B2 (en) * | 2010-11-16 | 2013-08-13 | Seagate Technology Llc | Method of switching out-of-plane magnetic tunnel junction cells |
US8830734B2 (en) * | 2010-11-19 | 2014-09-09 | Seagate Technology Llc | Using a nearby cell to provide field assisted switching in a magnetic memory array |
WO2016018503A1 (en) * | 2014-07-30 | 2016-02-04 | University Of South Florida | Magnetic memory physically unclonable functions |
US10916286B2 (en) | 2018-08-17 | 2021-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Assisted write method for MRAM testing and field applications |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5748519A (en) * | 1996-12-13 | 1998-05-05 | Motorola, Inc. | Method of selecting a memory cell in a magnetic random access memory device |
US5966012A (en) * | 1997-10-07 | 1999-10-12 | International Business Machines Corporation | Magnetic tunnel junction device with improved fixed and free ferromagnetic layers |
US6097625A (en) * | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
US6178131B1 (en) * | 1999-01-11 | 2001-01-23 | Ball Semiconductor, Inc. | Magnetic random access memory |
US6191972B1 (en) * | 1999-04-30 | 2001-02-20 | Nec Corporation | Magnetic random access memory circuit |
US6163477A (en) * | 1999-08-06 | 2000-12-19 | Hewlett Packard Company | MRAM device using magnetic field bias to improve reproducibility of memory cell switching |
US6166948A (en) * | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
US6188615B1 (en) * | 1999-10-29 | 2001-02-13 | Hewlett-Packard Company | MRAM device including digital sense amplifiers |
US6424561B1 (en) * | 2000-07-18 | 2002-07-23 | Micron Technology, Inc. | MRAM architecture using offset bits for increased write selectivity |
US6335890B1 (en) * | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
US6385082B1 (en) * | 2000-11-08 | 2002-05-07 | International Business Machines Corp. | Thermally-assisted magnetic random access memory (MRAM) |
-
2003
- 2003-01-02 US US10/335,671 patent/US6791868B2/en not_active Expired - Lifetime
- 2003-12-22 CN CNB2003101215708A patent/CN100347785C/zh not_active Expired - Lifetime
-
2004
- 2004-01-02 TW TW093100049A patent/TWI284901B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101465156B (zh) * | 2007-12-17 | 2011-12-21 | 株式会社日立制作所 | 信息存储装置和存储介质 |
CN102169728A (zh) * | 2010-02-26 | 2011-08-31 | 希捷科技有限公司 | 磁场检测设备及其使用方法 |
US8705213B2 (en) | 2010-02-26 | 2014-04-22 | Seagate Technology Llc | Magnetic field detecting device with shielding layer at least partially surrounding magnetoresistive stack |
CN102169728B (zh) * | 2010-02-26 | 2015-06-03 | 希捷科技有限公司 | 磁场检测设备及其使用方法 |
CN103872242A (zh) * | 2012-12-17 | 2014-06-18 | 国际商业机器公司 | 热自旋扭矩传输磁阻随机存取存储器 |
CN103872242B (zh) * | 2012-12-17 | 2017-01-04 | 国际商业机器公司 | 热自旋扭矩传输磁阻随机存取存储器 |
Also Published As
Publication number | Publication date |
---|---|
US6791868B2 (en) | 2004-09-14 |
TWI284901B (en) | 2007-08-01 |
US20040130935A1 (en) | 2004-07-08 |
TW200426843A (en) | 2004-12-01 |
CN100347785C (zh) | 2007-11-07 |
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Effective date of registration: 20171103 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171103 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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Granted publication date: 20071107 |