CN1510754A - Organic lumine scent displaying devices - Google Patents

Organic lumine scent displaying devices Download PDF

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Publication number
CN1510754A
CN1510754A CNA02160746XA CN02160746A CN1510754A CN 1510754 A CN1510754 A CN 1510754A CN A02160746X A CNA02160746X A CN A02160746XA CN 02160746 A CN02160746 A CN 02160746A CN 1510754 A CN1510754 A CN 1510754A
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CN
China
Prior art keywords
power supply
type material
anode
organic light
display unit
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Granted
Application number
CNA02160746XA
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Chinese (zh)
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CN100350635C (en
Inventor
科 陈
陈科
刘逸忠
黄维
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INESA Electron Co., Ltd.
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GUANGDIAN ELECTRONIC CO Ltd SHANGHAI
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Priority to CNB02160746XA priority Critical patent/CN100350635C/en
Publication of CN1510754A publication Critical patent/CN1510754A/en
Application granted granted Critical
Publication of CN100350635C publication Critical patent/CN100350635C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

An organic light-emitting display unit, includes power supply, display unit, the negative electrode of power supply (1) is connected with positive electrode in turn through the anode of display unit, electron transport layer, complex luminescence layer, anode, is inserted into P type material in the electron transport layer, the one end of P type material is connected with the positive electrode of power supply, the negative electrode of power supply is connected with cathode; or insert N type material into hole transport layer, the one end of N type material is connected with negative electrode of power supply, the positive electrode of power supply is connected with anode. The function of this three pole structure is to control the luminescence current through a small current, in this way can reduce power consumption in the driving circuit; also can increase the ratio between the performance and cost for the organic light-emitting display; it can adopt full organic materials and be made into flexible display.

Description

A kind of organic light-emitting display device
Technical field
A kind of electronic display unit, especially a kind of organic light-emitting display device.
Background technology
Present organic luminescent device all is a kind of structure of two utmost point formulas, the structure of so-called two utmost point formulas is exactly that each display unit all has only two electrodes, be respectively negative electrode and anode, electric current injects electronics and hole respectively by these two electrodes, and electronics and hole arrive organic light-emitting device luminescent layer generation recombination luminescence at last.This is the basic principle of present two utmost point formula luminescent devices, it has advantage of simple structure, but it also exists some problems, because organic luminescent device belongs to current drives, so drive current is bigger, very most of power consumption is arranged on driver circuit, electric energy is converted into heat energy, device temperature is raise, very unfavorable to device lifetime.Especially making on the high-resolution display screen of large scale: first, owing to adopt TFT (thin-film transistor) driven with active matrix technology, and organic light-emitting device TFT technology manufacturing process more complicated has only the multi-crystal TFT technology relatively to be fit to organic luminescent device, and its TFT panel cost is higher; The second, because TFT technology and organic luminescent device manufacturing technology are incompatible, increased technological process; The 3rd, also have present TFT technology can't make flexible panel, this will limit the application scenario of display.
Summary of the invention
The technical issues that need to address of the present invention provide a kind of three-pole organic light-emitting display device.
For realizing the present invention, the three-pole organic light-emitting display device comprises power supply, display unit, the negative pole of described power supply by with described display unit in anode, electron transfer layer, recombination luminescence layer, anode is connected successively with positive pole, insert P-type material in described electron transfer layer, an end of described P-type material is connected with the positive pole of power supply, and the negative pole of power supply is connected with described negative electrode; Perhaps: insert n type material at described hole transmission layer, an end of described n type material is connected with the negative pole of power supply, and the positive pole of described power supply is connected with described anode.
Beneficial effect of the present invention:
1. at the big weakness of two utmost point formula organic luminescent device drive currents, adopt a kind of structure of three-pole, except negative electrode and the anode in two utmost point formulas, the control utmost point that we add between them, its effect is to remove to control glow current with a little electric current, so just can reduce the power consumption on the drive circuit;
2. can improve the cost performance of organic light emitting display; .
Since the technology that adopts can with make the luminescent device compatibility, can simplify technological process, reduce cost;
4. because this structure can adopt full organic material, can make flexible display, expand organic greatly
The use occasion of light emitting display.
Description of drawings
Fig. 1 is two utmost point formula organic light-emitting display device figure;
Fig. 2 is the isoboles of two utmost point formula organic light-emitting display devices;
Fig. 3 is the 1st kind of three-pole organic light-emitting display device figure;
Fig. 4 is the isoboles of the 1st kind of three-pole organic light-emitting display device figure;
Fig. 5 is the 2nd kind of three-pole organic light-emitting display device figure;
Fig. 6 is the isoboles of the 2nd kind of three-pole organic light-emitting display device figure;
Fig. 7 is first embodiment of three-pole organic light-emitting display device;
Fig. 8 is second embodiment of three-pole organic light-emitting display device;
Among the figure: the 1st power supply 1, display unit 2, negative electrode 3, electron transfer layer 4, recombination luminescence layer 5, hole transmission layer 6, anode 7, P-type material 8, n type material 9, the 2 power supplys 10, the 3 power supplys 11, NPN type triode 12, positive-negative-positive triode 13.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail:
Implementation of the present invention is to add one deck P-type material 8 in two utmost point formula organic luminescence display units 2 in the electron transfer layer 4, or adds one deck n type material 9 in hole transmission layer 6, as the control utmost point, and as Fig. 3, shown in 5, Fig. 4, the 6th, their isoboles.Because electron transport material is a n type material, add one deck P-type material therebetween, this has just constituted the structure of a NPN, because LUMO (the minimum track that the occupies) energy level of P-type material is higher, the lumo energy of n type material is lower, will be in the potential barrier of the electronics of near interface shape of PN junction, when the device two ends add forward voltage, because the existence of this potential barrier, electronics can not passed electron transfer layer and be arrived luminescent layer, therefore can be not luminous; When between the control utmost point and negative electrode, adding the 2nd power supply 10, promptly positive voltage is added on the P-type material, at this moment near the electronic barrier the PN junction can reduce, and will pass the P-type material layer at electronics and enter N type electron transfer layer, arrives luminescent layer at last and hole-recombination is luminous.The principle of similar ambipolar triode, just can control the luminous of organic light emission spare with the electric current of the control utmost point, because triode has amplification,, so just can reduce the power consumption on the drive circuit as long as a very little Control current just can drive organic luminescent device.For the structure that in hole transmission layer, adds one deck n type material, it is the structure of a kind of PNP, it is that the control hole enters luminescent layer from anode, its operation principle and NPN similar, the potential barrier that a hole near the HOMO the PN junction (the highest track that do not occupy) energy level, can occur, when adding the 3rd power supply 11 between the control utmost point and the anode, potential barrier can reduce, and it is luminous that this can control organic light-emitting device equally.The basic principle of these two kinds of structures all is consistent.
Fig. 7 is an embodiment: device architecture is ITO/NPB/A1Q3:QA/A1Q3/NPB/A1Q3/Mg:Ag.On ITO (transparency electrode), evaporation one deck 50nmNPB (two naphthyl diphenyl diphenylamines) is as hole transmission layer earlier; The A1Q3 (8-hydroxyquinoline aluminum) of evaporation one deck 60nm on NPB again, the AQ (quinacridone) that wherein mixes, this one deck is as luminescent layer; Steaming the A1Q3 of 15nm again, is electron transfer layer; Steam the NPB of 5nm again, as key-course; And then the A1Q3 of evaporation 10nm, as electron transfer layer; Steam Mg:Ag (magnesium silver) alloy of 200nm at last, as negative electrode.Here NPB is a P-type material, and A1Q3 is a n type material, constitutes a NPN structure by them, and wherein NPB is drawn by electrode, as the control utmost point.
Fig. 8 is another embodiment: device architecture is ITO/NPB/A1Q3/NPB/A1Q3:QA/A1Q3/NPB/A1Q3/Mg:Ag.On ITO (transparency electrode), evaporation one deck 50nmNPB (two naphthyl diphenyl diphenylamines) is as hole transmission layer earlier; The A1Q3 (8-hydroxyquinoline aluminum) of evaporation one deck 5nm on NPB is as key-course; Evaporation one deck 20nmNPB on A1Q3 again, the A1Q3 of evaporation one deck 60nm on NPB again, the AQ (quinacridone) that wherein mixes, this one deck is as luminescent layer; And then the A1Q3 of evaporation 25nm, as electron transfer layer; Steam Mg:Ag (magnesium silver) alloy of 200nm at last, as negative electrode.Here NPB is a P-type material, and A1Q3 is a n type material, constitutes a positive-negative-positive structure by them, and wherein electrode is drawn by A1Q3, as the control utmost point.

Claims (1)

1. organic light-emitting display device, comprise power supply (1), display unit (2), the negative pole of described power supply (1) by with described display unit (2) in anode (3), electron transfer layer (4), recombination luminescence layer (5), anode (7) is connected successively with positive pole, it is characterized in that: insert P-type material (8) in described electron transfer layer (4), an end of described P-type material (8) is connected with the positive pole of power supply (10), and the negative pole of power supply (10) is connected with described negative electrode (3); Perhaps: insert n type material (9) at described hole transmission layer (6), an end of described n type material (9) is connected with the negative pole of power supply (11), and the positive pole of described power supply (11) is connected with described anode (7).
CNB02160746XA 2002-12-26 2002-12-26 Organic lumine scent displaying devices Expired - Fee Related CN100350635C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB02160746XA CN100350635C (en) 2002-12-26 2002-12-26 Organic lumine scent displaying devices

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Application Number Priority Date Filing Date Title
CNB02160746XA CN100350635C (en) 2002-12-26 2002-12-26 Organic lumine scent displaying devices

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CN100350635C CN100350635C (en) 2007-11-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845830A (en) * 2015-01-12 2016-08-10 上海和辉光电有限公司 Organic light-emitting device structure
CN110212101A (en) * 2018-02-28 2019-09-06 昆山工研院新型平板显示技术中心有限公司 Luminescent device and its display screen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100332186B1 (en) * 1995-11-28 2002-05-09 포만 제프리 엘 Organic/inorganic alloys used to improve organic electroluminescent devices
KR980005265A (en) * 1996-06-06 1998-03-30 빈센트 비. 인그라시아 Organic electroluminescent devices emitted from the hole transport layer
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
US6579629B1 (en) * 2000-08-11 2003-06-17 Eastman Kodak Company Cathode layer in organic light-emitting diode devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845830A (en) * 2015-01-12 2016-08-10 上海和辉光电有限公司 Organic light-emitting device structure
CN110212101A (en) * 2018-02-28 2019-09-06 昆山工研院新型平板显示技术中心有限公司 Luminescent device and its display screen

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CN100350635C (en) 2007-11-21

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C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Shanghai SVA Zhujin Microelectronics Co., Ltd.

Assignor: Guangdian Electronic Co., Ltd., Shanghai

Contract fulfillment period: 2007.11.30 to 2012.12.31 contract change

Contract record no.: 2008310000174

Denomination of invention: Organic lumine scent displaying devices

Granted publication date: 20071121

License type: Exclusive license

Record date: 2008.10.9

LIC Patent licence contract for exploitation submitted for record

Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.11.30 TO 2012.12.31; CHANGE OF CONTRACT

Name of requester: SHANGHAI OPTO-ELECTRICAL ZHUJIN MICROTRONICS A/S

Effective date: 20081009

DD01 Delivery of document by public notice

Addressee: Guangdian Electronic Co., Ltd., Shanghai

Document name: Notification to Pay the Fees

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Owner name: INESA ELECTRON CO., LTD.

Free format text: FORMER NAME: SVA ELECTRON CO., LTD.

CP03 Change of name, title or address

Address after: 200081 Building 1, building 200, Zhang Heng Road, Zhangjiang hi tech park, Shanghai, Pudong New Area, 2

Patentee after: INESA Electron Co., Ltd.

Address before: 200081 No. 196 Ouyang Road, Shanghai

Patentee before: Guangdian Electronic Co., Ltd., Shanghai

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Addressee: Chen Ke

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Granted publication date: 20071121

Termination date: 20111226