CN110212101A - Luminescent device and its display screen - Google Patents
Luminescent device and its display screen Download PDFInfo
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- CN110212101A CN110212101A CN201810168994.6A CN201810168994A CN110212101A CN 110212101 A CN110212101 A CN 110212101A CN 201810168994 A CN201810168994 A CN 201810168994A CN 110212101 A CN110212101 A CN 110212101A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a kind of luminescent device and its display screen, which includes cathode layer, quantum dot light emitting layer and anode layer, and the luminescent device further includes the first hetero junction layer；Wherein, first hetero junction layer is arranged between the cathode layer and the quantum dot light emitting layer, and first hetero junction layer includes at least the first material and the second material that can constitute hetero-junctions.Above-mentioned luminescent device and display screen, since the first material and the second material can form hetero-junctions, so the free carrier of a large amount of high concentration can be generated in the interface of hetero-junctions, electron mobility so can be improved, the transmission imbalance problem in hole and electronics in carrier is solved, not only to promote luminous efficiency and the service life of luminescent device and display screen.
Description
Technical field
The present invention relates to display fields, more particularly to luminescent device and its display screen.
Background technique
Quantum dot (Quantum Dot) luminescent device with colour gamut height, colour purity height, long service life and can pass through print because of it
Dataller's skill prepare the advantages that and be concerned.
The structure of typical quantum dot light emitting device includes the electronic shell being stacked, quantum dot light emitting layer and hole at present
Layer, however in the devices, electron mobility and hole mobility are often inconsistent, so will cause charge in device and transmit not
Balance, influences luminous efficiency and the service life of device.
Summary of the invention
Based on this, it is necessary to against the above technical problems, provide a kind of luminescent device and its display screen.
A kind of luminescent device, including cathode layer, quantum dot light emitting layer and anode layer, which is characterized in that the luminescent device
It further include the first hetero junction layer；Wherein,
First hetero junction layer is arranged between the cathode layer and the quantum dot light emitting layer, first hetero-junctions
Layer includes at least the first material and the second material that can constitute hetero-junctions.
Above-mentioned luminescent device so can be at the interface of hetero-junctions since the first material and the second material can form hetero-junctions
Place generates the free carrier of a large amount of high concentration, and electron mobility so can be improved, and not only solves hole and electricity in carrier
The transmission imbalance problem of son, to promote luminous efficiency and the service life of luminescent device.In addition, can also significantly drop to a certain extent
To the dependence of specific material and the requirement of electrodes work functions on low electron transfer layer.
First hetero junction layer contains first material including at least what is be stacked in one of the embodiments,
First material layer and second material layer containing second material.
It is described in one of the embodiments, heterogeneous to become P-N hetero-junctions.
First material includes p-type semiconductor material in one of the embodiments, and the first material layer is close
The cathode layer setting；Second material includes N-type semiconductor material, and the second material layer is set close to the anode layer
It sets.
In one of the embodiments, the first material layer with a thickness of 5nm~25nm, the thickness of the second material layer
Degree is 5nm~50nm.
First material includes p-type metal oxide and/or p-type organic matter in one of the embodiments,.
The p-type metal oxide includes NiO, WO in one of the embodiments,3、V2O5At least one of, the P
Type organic matter includes at least one of TAPC, NPB, m-MTDATA, TCTA.
Second material includes N-type organic matter and/or N-type metal oxide in one of the embodiments,.
The N-type organic matter includes at least one in HAT-CN, Bphen, Bepp2, TPBi in one of the embodiments,
Kind, the N-type metal oxide includes at least one of ZnO, TiO2.
The luminescent device further includes hole transmission layer, hole injection layer, electron-transport in one of the embodiments,
At least one layer in layer, electron injecting layer.
The present invention also provides a kind of display screen, the luminescent device including any description above.
Above-mentioned display screen so can be in the interface of hetero-junctions since the first material and the second material can form hetero-junctions
Electron mobility so can be improved in the free carrier for generating a large amount of high concentration, not only solves hole and electronics in carrier
Transmission imbalance problem, to promote luminous efficiency and the service life of display screen, can also significantly reduce to a certain extent electronics biography
To the dependence of specific material and the requirement of electrodes work functions on defeated layer.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the luminescent device of one embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the luminescent device of another embodiment of the present invention；
Fig. 3 is the structural schematic diagram of the luminescent device of another embodiment of the invention.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case where violating intension of the present invention, therefore the present invention is not limited by the specific embodiments disclosed below.
It should be noted that be referred to as " being fixed on " another part when part, it can directly on another part or
There may be parts placed in the middle.When a part is considered as " connection " another part, it can be directly to another part or
Person may be simultaneously present part placed in the middle.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
With reference to the accompanying drawing, the present invention is described in detail.
In conjunction with shown in Fig. 1-3, the present invention provides a kind of luminescent device, which includes light emitting diode, preferably
Light emitting diode with quantum dots.It includes the anode layer 100, quantum dot light emitting layer 200, the first hetero junction layer being cascading
300 and cathode layer 400.
In traditional luminescent device, homogenous material is generallyd use as electron transfer layer, the energy level knot of electron transport material
Structure and electron mobility etc. are affected to device performance.And to obtain efficient luminescent device, often require to use height
The electron transport layer materials of quality, such as the ZnO of high-quality.And according to other electron transport layer materials, then it will appear electricity
Transport factor is lower than the problem of hole mobility, so that luminous efficiency and the service life of device are influenced, in addition, also can be to high-quality
There are certain material dependences for electron transport layer materials.
In the present embodiment, the first hetero junction layer 300 can be applied to as electron transfer layer.First hetero junction layer 300
Including at least the first material and the second material that can constitute hetero-junctions.
Since the first material and the second material can form hetero-junctions, can so be generated in the interface of hetero-junctions a large amount of high
Electron mobility so can be improved in the free carrier of concentration, and the transmission for not only solving hole and electronics in carrier is uneven
Problem can also be significantly reduced to a certain extent on electron transfer layer to tool with promoting luminous efficiency and the service life of luminescent device
The dependence of body material and the requirement of electrodes work functions.
In one embodiment, the first material and the second material can respectively include P-type material and n type material.P-type material and
The selection of n type material need to meet the matching relationship of energy level, specifically be exactly the valence band of P-type material and the conduction band shape of n type material
At the relationship of hetero-junctions.
In one embodiment, referring specifically to Fig. 2, the first hetero junction layer 300 contains first including at least what is be stacked
The first material layer 310 of material and second material layer 320 containing the second material.
In one embodiment, the first material includes p-type semiconductor material, and first material layer 310 is close to cathode layer 400
Setting；Second material includes N-type semiconductor material, and second material layer 320 is arranged close to anode layer 100.Specifically, having P
The first material layer 310 of type semiconductor material is arranged close to cathode layer 400, and the second material layer with N-type semiconductor material
320 are arranged close to anode layer 100.In this way, can further improve electron mobility, improve carrier transport imbalance problem, it is excellent
Change device performance.
In one embodiment, the first material may include p-type metal oxide and/or p-type organic matter.Wherein, p-type metal
Oxide includes but is not limited to NiO, WO3、V2O5At least one of.P-type organic matter may include but be not limited to TAPC, NPB, m-
At least one of MTDATA and TCTA.
In one embodiment, the second material may include N-type organic matter and/or N-type metal oxide.Wherein, N-type is organic
Object includes but is not limited at least one of HAT-CN, Bphen, Bepp2, TPBi.N-type metal oxide may include but be not limited to
At least one of ZnO, TiO2.
In a preferred embodiment, the first material may include p-type metal oxide, and the second material may include that N-type is organic
Object.The combination of p-type metal oxide and N-type organic matter needs to meet the matching relationship of energy level, is specifically exactly p-type metal oxygen
The valence band of compound and the conduction band of N-type organic matter form the relationship of hetero-junctions.More specifically, p-type metal oxide includes but unlimited
In NiO, WO3And V2O5At least one of, such as can also be MoO3.N-type organic matter includes but is not limited to aoxidize with p-type metal
At least one of HAT-CN, Bphen, Bepp2 and TPBi of level-density parameter of object.It should be noted that qualified p-type
Metal oxide and N-type organic matter include the material but not limited to this.
In one embodiment, first material layer 310 with a thickness of 5nm~25nm, second material layer 320 with a thickness of
5nm~50nm.Preferably, the thickness of second material layer 320 is greater than the thickness of first material layer 310.Due to the first hetero junction layer
300 have electron-transport effect, and the first material in first material layer 310 is p-type semiconductor material, second material layer 320
In the second material be N-type semiconductor material.In this way, being greater than first material layer 310 by the thickness of setting second material layer 320
Thickness, can further improve electron mobility, equilbrium carrier transmission rate, optimized device performance.Certainly, with technology
Progress, may be not limited to this film thickness range.
(not shown) in other embodiments, the first hetero junction layer can be to be mixed with by the first material and the second material
Mixed layer.At this point, the first material and the second material can form bulk heterojunction structure.
In another embodiment, which may also include electron transfer layer, and first hetero junction layer 300 can at this time
It is arranged in electron transfer layer, or may also be arranged between quantum dot light emitting layer 200 and electron transfer layer.Electron-transport at this time
Electron transport material commonly used in the art can be selected in the material of layer, and the thickness of electron transfer layer can be selected from 5~300nm, preferably
For 20~100nm.Certainly, with advances in technology, this film thickness range may be not limited to.
In one embodiment, quanta point material commonly used in the art can be selected in the material of quantum dot light emitting layer 200, including
But it is not limited to II-VI compounds of group and its core-shell structure, III-V or group IV-VI semiconductor nano and its core-shell structure, such as
What materials such as CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, InAs, InP, GaAs, GaP, PbS, PbSe or both were composed
Core-shell structure.Quantum dot in quantum dot light emitting layer 200 can be selected from red quantum dot, green quantum dot and blue quantum dot
At least one, quantum dot quantity and characteristic can be selected and be adjusted accordingly according to the performance of luminescent device.In order to guarantee
The luminous efficiency and carrier transport efficiency of quantum dot light emitting layer 200, the thickness of quantum dot light emitting layer 200 can be selected from 5~
300nm, preferably 20~100nm.Certainly, with advances in technology, this film thickness range may be not limited to.
In one embodiment, the material of anode layer 100 and cathode layer 400 can carry out corresponding according to the type of luminescent device
Adjustment.Specifically, when luminescent device is inverted structure, cathode layer is transparent electrode, and anode layer is nontransparent electricity at this time
Pole.When luminescent device is positive assembling structure, anode layer is transparent electrode, and cathode layer is non-transparent electrode at this time.Nontransparent electricity
Pole transmits away to avoid the light that quantum dot light emitting layer is emitted through the electrode layer, and transparent electrode may make quantum dot to send out
The light that photosphere is emitted transmits away through the electrode layer.Transparent electrode material can be transparent material commonly used in the art, example
Such as tin indium oxide (ITO) material, fluorine mix tin oxide (FTO) material, graphene, carbon nanotube membrane material.And non-transparent electrode material
Material can be non-transparent material commonly used in the art, such as anode layer material can be selected from the metal materials such as aluminium, silver, copper, gold, and cathode
Layer material may include metal and its oxide, specifically including but not limited to aluminium and silver.
In one embodiment, anode layer 100 may be provided on substrate (not shown), and the material of the substrate is unrestricted,
It can be material commonly used in the art, may be, for example, hard material or flexible material.Hard material can be glass.Flexible material can be
Aluminium foil or macromolecule membrane material, wherein macromolecule membrane material can be the membrane materials such as PE film, PP film, PI film, PC film.
In one embodiment, luminescent device further include hole transmission layer, hole injection layer, in electron injecting layer at least
One layer.It so can further improve the transmission performance of carrier.In the present embodiment, as shown in figure 3, luminescent device includes simultaneously
Hole transmission layer 600 and hole injection layer 500.
In one embodiment, hole mobile material commonly used in the art can be selected in the material of hole transmission layer 600, including
But it is not limited to TAPC, NPB, PVK, TFB, poly-TPD and metal oxide, wherein metal oxide includes but is not limited to aoxidize
Molybdenum and nickel oxide.The thickness of its hole transmission layer can be selected from 5~300nm, preferably 20~100nm.Certainly, with technology into
Step, may be not limited to this film thickness range.
In one embodiment, hole-injecting material commonly used in the art can be selected in the material of hole injection layer 500, including
But it is not limited to PEDOT.The thickness of its hole injection layer can be selected from 5~300nm, preferably 20~100nm.Certainly, with technology
Progress, this film thickness range may be not limited to.
In one embodiment, electron injecting layer is (not shown) is arranged between cathode layer and the first hetero junction layer.Electronics
Electron injection material commonly used in the art can be selected in implanted layer.
The preparation method of luminescent device provided by the present invention can be realized by the following method.
It is illustrated by taking the luminescent device of positive assembling structure as an example below, the preparation method of luminescent device may include following preparation
Step:
One anode layer 100 is provided；
Deposit quantum dot light emitting layer 200；
The first hetero junction layer 300 is deposited on the quantum dot light emitting layer 200；
The deposited cathode layer 400 on first hetero junction layer 300.
Specifically, the step of the first hetero junction layer 300 of deposition include:
The first material is first deposited on quantum dot light emitting layer 200；
Depositing second material on the first material again.
The specific implementation for depositing the first material and the second material can be the conventional technical means of compatible solwution method, specifically
The including but not limited to modes such as spin coating, printing, spraying and roll-to-roll printing.The material type of first material and the second material and heavy
Product thickness is as described above, details are not described herein.
In a preferred embodiment, it before depositing quantum dot light emitting layer 200, can also successively sink on anode layer 100
Product hole injection layer 500 and hole transmission layer 600.In another embodiment, only exist before depositing quantum dot light emitting layer 200
Deposition of hole transport layer 600 on anode layer 100.
In one embodiment, it after depositing the first hetero junction layer 300, can also be deposited on the first hetero junction layer 300
Electron injecting layer.
Method commonly used in the art can be used in the above-mentioned anode layer 100 for preparing, and may be, for example, vapour deposition method.The anode layer 100 can sink
Product is on substrate.
The above anode layer 100, quantum dot light emitting layer 200, the first hetero junction layer 300, cathode layer 400 and hole injection layer
500 and the preparation method of hole transmission layer 600, electron injecting layer common method, respective material and deposition thickness can be used
As described above, details are not described herein.
The present invention also provides a kind of display screens, including above-described luminescent device.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of luminescent device, including cathode layer, quantum dot light emitting layer and anode layer, which is characterized in that the luminescent device is also
Including the first hetero junction layer；Wherein,
First hetero junction layer is arranged between the cathode layer and the quantum dot light emitting layer, and first hetero junction layer is extremely
Few includes the first material and the second material that can constitute hetero-junctions.
2. luminescent device according to claim 1, which is characterized in that first hetero junction layer is included at least and is stacked
The first material layer containing first material and the second material layer containing second material.
3. luminescent device according to claim 2, which is characterized in that first material includes p-type semiconductor material, and
The first material layer is arranged close to the cathode layer；Second material includes N-type semiconductor material, and second material
Layer is arranged close to the anode layer.
4. luminescent device according to claim 2, which is characterized in that the first material layer with a thickness of 5nm~25nm,
The second material layer with a thickness of 5nm~50nm.
5. luminescent device according to claim 1 to 4, which is characterized in that first material includes p-type metal oxygen
Compound and/or p-type organic matter.
6. luminescent device according to claim 5, which is characterized in that the p-type metal oxide includes NiO, WO3、V2O5
At least one of；The p-type organic matter includes at least one of TAPC, NPB, m-MTDATA, TCTA.
7. luminescent device according to claim 1 to 4, which is characterized in that second material includes N-type organic matter
And/or N-type metal oxide.
8. luminescent device according to claim 7, which is characterized in that the N-type organic matter include HAT-CN, Bphen,
At least one of Bepp2, TPBi；The N-type metal oxide includes at least one of ZnO, TiO2.
9. luminescent device according to claim 1 to 4, which is characterized in that the luminescent device further includes hole transport
Layer, hole injection layer, electron transfer layer, at least one layer in electron injecting layer.
10. a kind of display screen, which is characterized in that including any luminescent device of claim 1-9.
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| CN201810168994.6A CN110212101A (en) | 2018-02-28 | 2018-02-28 | Luminescent device and its display screen |
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| CN201810168994.6A CN110212101A (en) | 2018-02-28 | 2018-02-28 | Luminescent device and its display screen |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112331783A (en) * | 2019-12-09 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Alternating-current driven light-emitting device, preparation method thereof and light-emitting device |
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