CN100444423C - An organic luminous display device - Google Patents
An organic luminous display device Download PDFInfo
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- CN100444423C CN100444423C CNB2003101228568A CN200310122856A CN100444423C CN 100444423 C CN100444423 C CN 100444423C CN B2003101228568 A CNB2003101228568 A CN B2003101228568A CN 200310122856 A CN200310122856 A CN 200310122856A CN 100444423 C CN100444423 C CN 100444423C
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Abstract
The present invention relates to an organic luminous display device which is characterized in that a photoelectric conducting layer is arranged between a cathode and an electronic transmission layer, or the photoelectric conducting layer is arranged between an anode and a hole transmission layer. When used, the present invention adds in a layer of photoelectric electric conducting materials between the cathode and the electronic transmission layer or between the anode and the hole transmission layer of the organic luminous display device. After the photoelectric conducting layer is added, the luminous intensity of the organic luminous display device has two large different values within a voltage range, namely a bistable area. Once provided with a bistable device, the present invention has a memory function, namely that the present invention can keep luminous intensity values within the voltage range, and two steady states are transformed mutually, namely that the present invention can change memory contents. The display device can also be widely used in other storage electronic devices, and the present invention which has luminous property can also be used in some special photoelectric systems.
Description
Technical field:
The present invention relates to the technical field of electron display device, specifically a kind of organic light emitting display of memory-type.
Background technology:
Present organic luminescent device all is memoryless function, what is called is memoryless to be exactly when luminescent device is switched on, voltage begins luminous (process 1) after arriving a certain thresholding, luminous intensity strengthens along with the increase of voltage, when voltage reduces then (otherwise process 2), illustrate with Fig. 1, straight line among the figure is represented the situation of brightness along with change in voltage, the arrow of figure line is represented the direction that voltage raises, and two arrows are represented voltage from low to high, again process from high to low, for memoryless device, the figure line of these two processes is basic coincidences, just thinks among Fig. 1 that two lines overlap fully, so look to have only a line.The device of this feature, we just claim memoryless device, because when voltage reduces, device does not show any information in the past.The organic luminescent device of this memoryless function exists some problems, its type of drive has the higher requirement of ratio, for driving with simple passive matrix, scan by horizontal pulse exactly and realize that the plane shows, when the big more duty of ratio of line number just more little, because organic luminescent device does not have memory function, must very strong luminous intensity be arranged in moment, mean flow rate just can be higher.Because organic luminescent device belongs to current drives, so moment, drive current was bigger, very most of power consumption is arranged on driver circuit, electric energy is converted into heat energy, device temperature is raise, very unfavorable to device lifetime, the too high meeting of brightness reduces the organic light-emitting device life-span greatly in addition, and the life-span is the key factor of restriction organic luminescent device industrialization, therefore the organic light emitting display mode of passive matrix driving can't realize large scale display, and this is the disadvantageous feature of a memoryless device.If make the high-resolution display screen of large scale, memoryless organic luminescent device must adopt TFT (thin-film transistor) driven with active matrix technology, but organic light-emitting device TFT technology manufacturing process more complicated, and to adopt the multi-crystal TFT technology, its technology also there is not maturation, the TFT panel cost is very high at present, and TFT technology and organic luminescent device manufacturing technology are incompatible, increased technological process, also have present TFT technology can't make flexible panel, this will limit the application scenario of display.
Summary of the invention:
The object of the present invention is to provide a kind of improved organic light emitting display, it can overcome some shortcomings of the prior art.
To achieve these goals, technical scheme of the present invention is: a kind of organic light emitting display, it mainly comprises housing, is located at negative electrode and the anode in the housing and is located at the electron transfer layer at negative electrode place and be located at the hole transmission layer at anode place, it is characterized in that: be provided with a photoelectricity conducting shell between negative electrode and the electron transfer layer or be provided with a photoelectricity conducting shell between anode and hole transmission layer.
The present invention adds one deck photoconductive material during use between organic light-emitting device negative electrode and electron transfer layer, or is added between anode and the hole transmission layer.After adding the photoelectric conductance layer, make organic luminescent device two values that difference is bigger be arranged at a certain voltage range inner glow intensity, just the bistable state zone in case there has been bistable device that memory function has just been arranged, that is to say in this voltage range and can preserve luminous intensity values; And these two stable states transform mutually, just can change the content of memory, and this display device also can be widely used in other store electrons equipment, and it has emitting characteristics, also can be used for some special electro-optical systems.
Description of drawings:
Fig. 1 is an organic light-emitting device performance schematic diagram in the prior art
Fig. 2 is a performance schematic diagram of the present invention
Fig. 3 is the structural representation of one embodiment of the invention
Fig. 4 is the structural representation of further embodiment of this invention
Embodiment:
The invention will be further described below in conjunction with drawings and Examples.
The present invention mainly comprises housing 1, is located at negative electrode 2 and the anode 3 in the housing and is located at the electron transfer layer 4 at negative electrode place and be located at the hole transmission layer 5 at anode place, it is characterized in that: be provided with a photoelectricity conducting shell 6 between negative electrode and the electron transfer layer or be provided with a photoelectricity conducting shell 6 between anode and hole transmission layer; Be provided with a recombination luminescence layer 7 between electron transfer layer and the hole transmission layer; The photoelectricity conducting shell is that 80-150nm Hou De perylene is red.
After adding the photoelectric conductance layer, when organic luminescent device powers on when being pressed with low the rising, owing to there is not illumination, the resistance of photoconductive material is very high, when voltage is low, pass through the electric current very little (process 1) of device, can't driving element luminous, when voltage is elevated to a certain degree (process 2), electric current be enough to driving element luminous after, the light part that device sends is absorbed by photoconductive material, at this moment the resistance of photoconductive material is owing to illumination descends, the resistance that reduces causes electric current to increase, and electric current increases makes the luminous enhancing of device, luminous like this enhancing can impel electric current to increase again again, produce positive feedback effect, because this positive feedback effect can make luminous intensity increase sharply with the rising of voltage, when when voltage is opened, reducing (process 3), because positive feedback effect, luminous intensity slowly descends, when voltage drops to a certain degree (process 4), when luminous intensity can't be kept positive feedback, electric current sharply descended, luminous intensity will be zero very soon, finish voltage from high to low process more from low to high to this.These four processes can be represented with Fig. 2, arrow is represented the direction that process is carried out, this figure line and memoryless device is different as can be seen, voltage from low to high and the figure line of two processes from high to low no longer overlap, at a certain voltage range inner glow intensity two values (process 1 and 3) that difference is bigger are arranged, just the bistable state zone in case there has been bistable device that memory function has just been arranged, that is to say in this voltage range and can preserve luminous intensity values; And process 2,4 can make these two stable states transform mutually, just changes the content of memory.Utilize this memory characteristic, just can realize the large-screen organic light emitting display of simple passive matrix driving, because pixel has had memory function, scanning impulse can be divided into two kinds, a kind of is to write pulse, another kind is to keep pulse, when writing impulse action, column data line is the luminance of controlling light emitting device arbitrarily, when keeping impulse action, luminescent device keeps original luminance, is that an every trade is luminous one by one so do not resemble memoryless device, and all here scan lines can show simultaneously, thereby do not need the instantaneous high strength of luminescent device luminous, reduce current strength and heating, reduced the power consumption on the drive circuit greatly, thereby prolonged the life-span of display.Owing to adopt simple passive matrix to drive, can reduce the cost of large scale organic light emitting display; Because it is a kind of new memory device, can be widely used in other store electrons equipment in addition, it has emitting characteristics again, also can be used for some special electro-optical systems.
Provide an embodiment below, device architecture is ITO/NPB/AlQ3:QA/AlQ3/Me-PTC/Mg:Ag, and structure as shown in Figure 3.On ITO (transparency electrode), evaporation one deck 50nmNPB (two naphthyl diphenyl diphenylamines) is as hole transmission layer earlier; The AlQ3 (8-hydroxyquinoline aluminum) of evaporation one deck 60nm on NPB again, the AQ (quinacridone) that wherein mixes, this one deck is as luminescent layer; Steam the AlQ3 of 30nm again, as electron transfer layer; Red at the Me-PTC (perylene of electron transfer layer steaming one deck 100nm again), as the photoelectricity conducting shell; Steam Mg:Ag (magnesium silver) alloy of 200nm at last, as negative electrode.
In another embodiment, device architecture is ITO/Me-PTC/NPB/AlQ3:QA/AlQ3/Mg:Ag, and structure as shown in Figure 4.On ITO (transparency electrode), the Me-PTC (perylene of evaporation one deck 100nm is red earlier), as the photoelectricity conducting shell; Again on the photoelectricity conducting shell evaporation one deck 50nmNPB (two naphthyl diphenyl diphenylamines) as hole transmission layer; On NPB, steam the AlQ3 (8-hydroxyquinoline aluminum) of one deck 60nm again, the AQ (quinacridone) that wherein mixes, this one deck is as luminescent layer; And then the AlQ3 of evaporation 30nm, as electron transfer layer; Steam Mg:Ag (magnesium silver) alloy of 200nm at last, as negative electrode.
Claims (2)
1, a kind of organic light emitting display, it mainly comprises housing, is located at negative electrode and the anode in the housing and is located at the electron transfer layer of negative electrode bottom and be located at the hole transmission layer of anode top, it is characterized in that: be provided with a photoelectricity conducting shell between negative electrode and the electron transfer layer or between anode and hole transmission layer, be provided with a photoelectricity conducting shell, the material Wei perylene of photoelectricity conducting shell is red, and thickness is 80-150nm.
2, a kind of organic light emitting display according to claim 1 is characterized in that: be provided with a recombination luminescence layer between electron transfer layer and the hole transmission layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101228568A CN100444423C (en) | 2003-12-26 | 2003-12-26 | An organic luminous display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101228568A CN100444423C (en) | 2003-12-26 | 2003-12-26 | An organic luminous display device |
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| CN1635822A CN1635822A (en) | 2005-07-06 |
| CN100444423C true CN100444423C (en) | 2008-12-17 |
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| CNB2003101228568A Expired - Fee Related CN100444423C (en) | 2003-12-26 | 2003-12-26 | An organic luminous display device |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US575944A (en) * | 1897-01-26 | William gunn | ||
| US2874308A (en) * | 1956-07-02 | 1959-02-17 | Sylvania Electric Prod | Electroluminescent device |
| US3070701A (en) * | 1959-07-14 | 1962-12-25 | Sylvania Electric Prod | Electroluminescent device |
| US3375373A (en) * | 1964-08-25 | 1968-03-26 | Hughes Aircraft Co | Solid state bistable circuit |
| US3502885A (en) * | 1967-08-21 | 1970-03-24 | Gen Electric | Non-coplanar electrode photoconductor structure and electroluminescent-photoconductor array |
| EP1032045A2 (en) * | 1999-02-26 | 2000-08-30 | SANYO ELECTRIC Co., Ltd. | Electroluminescence display apparatus |
| CN1431855A (en) * | 2003-01-17 | 2003-07-23 | 东南大学 | High intensity red color organic electroluminescence device |
-
2003
- 2003-12-26 CN CNB2003101228568A patent/CN100444423C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US575944A (en) * | 1897-01-26 | William gunn | ||
| US2874308A (en) * | 1956-07-02 | 1959-02-17 | Sylvania Electric Prod | Electroluminescent device |
| US3070701A (en) * | 1959-07-14 | 1962-12-25 | Sylvania Electric Prod | Electroluminescent device |
| US3375373A (en) * | 1964-08-25 | 1968-03-26 | Hughes Aircraft Co | Solid state bistable circuit |
| US3502885A (en) * | 1967-08-21 | 1970-03-24 | Gen Electric | Non-coplanar electrode photoconductor structure and electroluminescent-photoconductor array |
| EP1032045A2 (en) * | 1999-02-26 | 2000-08-30 | SANYO ELECTRIC Co., Ltd. | Electroluminescence display apparatus |
| CN1431855A (en) * | 2003-01-17 | 2003-07-23 | 东南大学 | High intensity red color organic electroluminescence device |
Non-Patent Citations (2)
| Title |
|---|
| 苝红系列颜料的荧光性能及光电性能研究. 刘东志.染料工业，第31卷第1期. 1994 |
| 苝红系列颜料的荧光性能及光电性能研究. 刘东志.染料工业，第31卷第1期. 1994 * |
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| CN1635822A (en) | 2005-07-06 |
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Owner name: INESA ELECTRON CO., LTD. Free format text: FORMER NAME: SVA ELECTRON CO., LTD. |
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Address after: 200081 Building 1, building 200, Zhang Heng Road, Zhangjiang hi tech park, Shanghai, Pudong New Area, 2 Patentee after: INESA Electron Co., Ltd. Address before: 200081 No. 196 Ouyang Road, Shanghai Patentee before: Guangdian Electronic Co., Ltd., Shanghai |
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Granted publication date: 20081217 Termination date: 20111226 |