CN1507683A - 波长稳定的激光源 - Google Patents

波长稳定的激光源 Download PDF

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Publication number
CN1507683A
CN1507683A CNA028093801A CN02809380A CN1507683A CN 1507683 A CN1507683 A CN 1507683A CN A028093801 A CNA028093801 A CN A028093801A CN 02809380 A CN02809380 A CN 02809380A CN 1507683 A CN1507683 A CN 1507683A
Authority
CN
China
Prior art keywords
laser diode
wavelength
gas
light emitter
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028093801A
Other languages
English (en)
Chinese (zh)
Inventor
S���ն�
S·苏顿
N·K·赫齐斯
ض�
R·斯特尔佐达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens PLC
Original Assignee
Siemens PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0105651.4A external-priority patent/GB0105651D0/en
Application filed by Siemens PLC filed Critical Siemens PLC
Publication of CN1507683A publication Critical patent/CN1507683A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CNA028093801A 2001-03-08 2002-02-27 波长稳定的激光源 Pending CN1507683A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB0105651.4A GB0105651D0 (en) 2001-03-08 2001-03-08 Temperature stabilised laser diode and gas reference package
GB0105651.4 2001-03-08
GB0124426A GB2373096B (en) 2001-03-08 2001-10-11 A wavelength stabilised laser source
GB0124426.8 2001-10-11

Publications (1)

Publication Number Publication Date
CN1507683A true CN1507683A (zh) 2004-06-23

Family

ID=26245794

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028093801A Pending CN1507683A (zh) 2001-03-08 2002-02-27 波长稳定的激光源

Country Status (7)

Country Link
US (1) US20040190571A1 (cg-RX-API-DMAC7.html)
EP (1) EP1368872A2 (cg-RX-API-DMAC7.html)
JP (1) JP2004521500A (cg-RX-API-DMAC7.html)
CN (1) CN1507683A (cg-RX-API-DMAC7.html)
AU (1) AU2002234766A1 (cg-RX-API-DMAC7.html)
CA (1) CA2477247A1 (cg-RX-API-DMAC7.html)
WO (1) WO2002073757A2 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109406438A (zh) * 2018-11-06 2019-03-01 宁波海尔欣光电科技有限公司 光源封装体和用于检测气体的浓度的系统
WO2020042484A1 (zh) * 2018-08-28 2020-03-05 武汉电信器件有限公司 双载波集成光器件及光电模块
CN112730178A (zh) * 2020-12-22 2021-04-30 杭州春来科技有限公司 一种车载透射式烟度计及车辆

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60305867T2 (de) * 2003-03-20 2007-06-06 Agilent Technologies Inc., A Delaware Corp., Palo Alto Optoelektronisches Modul und Temperaturschalter dafür
US7086274B2 (en) * 2003-12-17 2006-08-08 Alcoa Inc. Method and apparatus for measuring gas concentration levels in liquids
US20060022213A1 (en) * 2004-08-02 2006-02-02 Posamentier Joshua D TO-can heater on flex circuit
EP1794571B1 (de) * 2004-09-14 2009-03-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum messen mindestens einer gaskomponente
DE102007039317A1 (de) * 2007-08-20 2009-02-26 Ses-Entwicklung Gmbh Verfahren und Vorrichtung zur exakten und geregelten Schwerpunktswellenlängenjustage der emittierten Strahlung einer Leuchtdiode
WO2009119790A1 (ja) * 2008-03-28 2009-10-01 株式会社堀場製作所 光分析計及び分析計用波長安定化レーザ装置
US20100002235A1 (en) * 2008-07-07 2010-01-07 IRMicrosystems SA Laser diode arrangements and method for gas detection
JP6430402B2 (ja) 2013-01-23 2018-11-28 カリフォルニア インスティチュート オブ テクノロジー 微量ガス検出用小型チューナブルレーザ分光計
US12560754B2 (en) * 2022-05-27 2026-02-24 Ii-Vi Delaware, Inc. Wavelength reference having repeating spectral features and unique spectral features
DE102024112684A1 (de) * 2024-05-06 2025-11-06 Endress+Hauser Group Services Ag Verfahren zur Bestimmung und/oder Überwachung einer Messgröße mittels photothermischer Spektroskopie und photothermisches Spektrometer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946434B2 (ja) * 1978-01-10 1984-11-12 キヤノン株式会社 半導体レ−ザ装置
JPS6370589A (ja) * 1986-09-12 1988-03-30 Nec Corp 半導体レ−ザモジユ−ル
JPH04105572U (ja) * 1991-02-26 1992-09-10 ソニー株式会社 レーザ装置
US5329539A (en) * 1991-10-28 1994-07-12 Lightwave Electronics Efficient laser configuration
DE4235768A1 (de) * 1992-10-24 1994-05-19 Cho Ok Kyung Modifizierte Halbleiterlaserdiode mit integriertem Temperaturregelungsteil
DE4429582C2 (de) * 1994-08-19 1998-02-26 Draegerwerk Ag Strahlungsquelle für ein Meßsystem
US5771254A (en) * 1996-01-25 1998-06-23 Hewlett-Packard Company Integrated controlled intensity laser-based light source
DE19717145C2 (de) * 1997-04-23 1999-06-02 Siemens Ag Verfahren zur selektiven Detektion von Gasen und Gassensor zu dessen Durchführung
DE19726455A1 (de) * 1997-06-21 1999-01-07 Draegerwerk Ag Strahlungsquelle für die Laserspektroskopie
US6477190B1 (en) * 1999-02-15 2002-11-05 Fujitsu Limited Optical module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020042484A1 (zh) * 2018-08-28 2020-03-05 武汉电信器件有限公司 双载波集成光器件及光电模块
US11675149B2 (en) 2018-08-28 2023-06-13 Wuhan Telecommunication Devices Co., Ltd Dual-carrier integrated optical device and photoelectric module
CN109406438A (zh) * 2018-11-06 2019-03-01 宁波海尔欣光电科技有限公司 光源封装体和用于检测气体的浓度的系统
CN112730178A (zh) * 2020-12-22 2021-04-30 杭州春来科技有限公司 一种车载透射式烟度计及车辆

Also Published As

Publication number Publication date
WO2002073757A3 (en) 2003-09-25
US20040190571A1 (en) 2004-09-30
CA2477247A1 (en) 2002-09-19
EP1368872A2 (en) 2003-12-10
WO2002073757A2 (en) 2002-09-19
JP2004521500A (ja) 2004-07-15
AU2002234766A1 (en) 2002-09-24

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