CN1506759A - Photoresist mask and its making process - Google Patents
Photoresist mask and its making process Download PDFInfo
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- CN1506759A CN1506759A CNA021539561A CN02153956A CN1506759A CN 1506759 A CN1506759 A CN 1506759A CN A021539561 A CNA021539561 A CN A021539561A CN 02153956 A CN02153956 A CN 02153956A CN 1506759 A CN1506759 A CN 1506759A
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- photoresist
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- rete
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- chromium
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Abstract
The present invention is photoresist mask and its making process. The mask consists of photoresist film on transparent substrate, and photoresist film with relative low transmittance to exposure light beam, lower than 5 %, is selected directly as the mask layer based on that photoresist film has different transmittances on incident light of different wavelengths. The making process includes painting the photoresist on glass, quartz or other transparent substrate in the thickness determined in the experiment; exposing the photoresist plate, development, and other steps to making the mask. The mask is simple in structure, easy to make, low in cost, no environmental pollution and etching resolution the same as that of chromium mask.
Description
Technical field
The present invention relates to make used mask of Fine photoetching figure and preparation method thereof, relate in particular to a kind of rete with photoresist as the photoresist mask of masking layer formation and the method for making of this mask.
Background technology
Present widely used mask is that for example manufacture craft and the parameter to chrome mask has detailed introduction in beautiful springtime product manual second fascicle " sol evenning chromium plate " (in April, 1993) that Changsha sol evenning chromium plate factory of beautiful springtime microelectronics main office prints with the chrome mask of chromium rete as masking layer.The making of chrome mask need be adopted coating process, the rete of evaporation metal chromium on transparent substrate.There is required filming equipment costliness in this method, the coating process complexity, and fabrication cycle is long, the shortcoming that the cost cost is high.In order on the chromium rete, to form figure, also need on the chromium rete, evenly to apply in advance one deck photoresist in addition, make " sol evenning chromium plate ".Exposure figure on the photoresist layer of sol evenning chromium plate again, the back of developing forms the photoresist figure, again with the photoresist figure for sheltering, eroding chromium unnecessary outside the required figure on the chromium rete, after removing photoresist, stay required figure on the chromium rete, obtain the chrome mask of figure.Here also having a problem, is exactly that these chromium that are corroded the flushing discharge will pollute environment.
Summary of the invention
Technology of the present invention is dealt with problems and is: a kind of the simple in structure of chromium rete that do not have is provided, makes easily, cost is low, not the photoresist mask that can pollute environment and the method for making of this mask.
Technical solution of the present invention is: the photoresist mask is characterized in that: comprise transparent substrate and the photoresist rete that evenly applies on it.
The method of making above-mentioned photoresist mask comprises the steps:
(1) selects material transparent substrates such as glass or quartz according to exposure wavelength;
(2) utilize one type photoresist that the incident light of different wave length is had the characteristic of different transmitances, in polytype photoresist, select for use the low class photoresist of exposure wavelength transmitance that reality is adopted to make masking layer;
(3) photoresist of selecting for use evenly is coated on several experiment substrates with sol evenning machine by different thickness respectively, measure the transmitance of every even matrix sheet again to incident light, therefrom selecting transmitance is available thickness at 5% thickness with the interior on-chip photoresist rete of even glue, generally selects the actual (real) thickness value of less available thickness value for determining;
(4) use sol evenning machine selected photoresist of the even coating of actual (real) thickness value by the definite photoresist rete of experiment on formal substrate, form the photoetching hectograph;
(5) the photoetching hectograph is exposed, after the PROCESS FOR TREATMENT such as development, make the practical photoresist mask of figure.
The present invention compared with prior art has the following advantages: because the photoresist rete that the present invention adopts plays a part to need the evenly photoresist layer of coating on the chromium rete of traditional chrome mask and the chromium rete simultaneously, so the structure of photoresist mask is very simple.On making apparatus and technology, the photoresist mask only need adopt common sol evenning machine and even adhesive process, has saved chrome mask and has made the filming equipment and the complicated coating process of the costliness of required usefulness, equipment cost is reduced, manufacture craft is simplified, and fabrication cycle shortens, and production efficiency improves.On mask graph was made, the photoresist mask exposure only needed later on just obtain pattern mask through developing, and had saved in the chrome mask graphic making, and corrosion chromium that also needs after the exposure and technology such as remove photoresist make graphic making technology simple.The photoresist mask is more much lower than chrome mask on cost of manufacture.And because the photoresist mask need not " chromium ", so in manufacture craft, can not cause " chromium " to pollute to environment.Therefore, the principal feature that the photoresist mask is had is: simple in structure, technology is simple, and fabrication cycle is short, and cost is low, does not produce pollution of chromium.
Description of drawings
Fig. 1 is the structural representation of " sol evenning chromium plate " of the chrome mask that adopts of prior art;
Fig. 2 is a main technique process flow diagram of making mask graph of the prior art sol evenning chromium plate;
The structural representation of " the photoetching hectograph " of Fig. 3 photoresist mask of the present invention;
Fig. 4 is the main technique process flow diagram of the present invention's version making with photoresist mask graph.
Embodiment
As shown in Figure 1, prior art constructions is that evenly evaporation one deck chromium is as masking layer on transparent substrate, and even coating one deck photoresist is used for exposure figure on the chromium layer again.
As shown in Figure 3, structure of the present invention is that directly evenly the photoresist selected for use of coating one deck is as masking layer on transparent substrate, and this layer photoetching glue also is used for exposure figure simultaneously.From Fig. 1 and Fig. 3 as seen, the photoetching hectograph has saved the chromium rete in the common sol evenning chromium plate, and structure is very simple.The making of photoetching hectograph only need be adopted common sol evenning machine and even adhesive process commonly used, and does not need to adopt sol evenning chromium plate to make required coating machine and complicated coating process.
As shown in Figure 2, prior art is made the mask graph technological process, at first use laser direct-writing figures generation device exposure figure on the photoresist rete, after developing, forming figure on the photoresist rete, is masking layer with the photoresist rete again, erodes unnecessary chromium on the chromium rete, remove useless photoresist rete at last, form required chrome mask figure.
As shown in Figure 4, the technological process that the present invention makes mask graph is with laser direct-writing figures generation device exposure figure on the photoresist rete, after developing, just to form final required mask graph on the photoresist rete.From Fig. 2 and Fig. 4 as can be seen with photoresist version make a mask graph saved with common sol evenning chromium plate make the mask graph corrosion chromium with technology such as remove photoresist.Therefore, the technology of the mask graph of version making with photoresist is very simple.
An exemplary embodiments of the present invention is to make the mask that deep ultraviolet KrF excimer laser (wavelength is 248 nanometers) photoetching is used, and this mask comprises suprasil substrate and even coating photoresist rete thereon.The thickness of this photoresist rete satisfy transmitance to incident light 5% with interior condition.
The making step of this mask is as follows:
At first, selection can see through the substrate of the quartzy slide making mask of this excimer laser, then, select for use S1400-17 type photoresist as the masking layer on the quartz substrate according to exposure wavelength, determine that through testing the photoresist film layer thickness that should evenly apply is that 500 nanometers are when above again, the photoresist rete can be in 5% to the transmitance of this excimer laser, actual fabrication thicknesses of layers be the photoresist mask of 550 nanometers.On quartz substrate, evenly apply S1400-17 type photoresist by this thickness, form the photoetching hectograph with sol evenning machine.With the mask graph of laser direct-writing method the photoresist rete on the photoetching hectograph is exposed, after PROCESS FOR TREATMENT such as development, make the photoresist mask that figure is arranged that photoetching is used again according to design.
This photoresist mask is used for the actual photolithographic exposure that carries out of KrF excimer laser reduced projection lithographic equipment, adopting numerical aperture is 0.29, the design resolving power is 0.5 micron projection objective, and it is 0.5 micron figure that photoetching has drawn live width, reached the design objective of projection objective.In order to compare, also use the chrome mask of identical figure, in above-mentioned identical etching system, done identical lithography experiments, obtained identical experimental result.
Embodiment illustrates and adopts photoresist mask disclosed by the invention to obtain and the identical photolithography resolution result of the common chrome mask of employing.
Claims (4)
1, photoresist mask is characterized in that: comprise substrate and the photoresist rete that evenly applies on it.
2, photoresist mask according to claim 1 is characterized in that: described substrate is transparent materials such as glass or quartz.
3, photoresist mask according to claim 1 is characterized in that: the thickness of photoresist rete should make this photoresist rete to the transmitance of exposing light beam in 5%.
4, make the method for photoresist mask as claimed in claim 1, it is characterized in that: adopt the following step:
(1) selects to make transparent substrate according to exposure wavelength;
(2) utilize the photoresist rete characteristic different, select for use the low photoresist rete of exposure wavelength transmitance directly as masking layer to the transmitance of different wave length incident light;
(3) on substrate, press the selected photoresist of the even coating of the thickness of testing the photoresist rete of determining, formation photoetching hectograph with sol evenning machine;
(4) the photoetching hectograph is exposed, after the PROCESS FOR TREATMENT such as development, make the practical photoresist mask of figure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021539561A CN1506759A (en) | 2002-12-09 | 2002-12-09 | Photoresist mask and its making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021539561A CN1506759A (en) | 2002-12-09 | 2002-12-09 | Photoresist mask and its making process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1506759A true CN1506759A (en) | 2004-06-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA021539561A Pending CN1506759A (en) | 2002-12-09 | 2002-12-09 | Photoresist mask and its making process |
Country Status (1)
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| CN (1) | CN1506759A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101505884B (en) * | 2005-08-15 | 2011-04-27 | 朗姆研究公司 | Apparatus for developing photoresist and method for operating the same |
| CN103823330A (en) * | 2014-02-14 | 2014-05-28 | 深圳市科利德光电材料股份有限公司 | Manufacturing technology of glue homogenizing plate |
| CN104807485A (en) * | 2014-01-23 | 2015-07-29 | 丛森 | Novel resin code disc production process |
-
2002
- 2002-12-09 CN CNA021539561A patent/CN1506759A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101505884B (en) * | 2005-08-15 | 2011-04-27 | 朗姆研究公司 | Apparatus for developing photoresist and method for operating the same |
| CN104807485A (en) * | 2014-01-23 | 2015-07-29 | 丛森 | Novel resin code disc production process |
| CN104807485B (en) * | 2014-01-23 | 2017-05-17 | 丛森 | Novel resin code disc production process |
| CN103823330A (en) * | 2014-02-14 | 2014-05-28 | 深圳市科利德光电材料股份有限公司 | Manufacturing technology of glue homogenizing plate |
| CN103823330B (en) * | 2014-02-14 | 2017-07-14 | 深圳市科利德光电材料股份有限公司 | Spin coating version manufacturing process |
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