CN1499583A - Method for reducing proportion of discarding wafer in chemical-treating facility - Google Patents
Method for reducing proportion of discarding wafer in chemical-treating facility Download PDFInfo
- Publication number
- CN1499583A CN1499583A CNA021506205A CN02150620A CN1499583A CN 1499583 A CN1499583 A CN 1499583A CN A021506205 A CNA021506205 A CN A021506205A CN 02150620 A CN02150620 A CN 02150620A CN 1499583 A CN1499583 A CN 1499583A
- Authority
- CN
- China
- Prior art keywords
- chemical
- wafer
- treating
- pretreatment solution
- loss ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Based on abnormal causes such as whether power source is normal or not, whether mechanical arm is normal or not, controlling mechanical arm or discharge valve of chemical treatment tank and supply valve of ultra pure water reaches target of lowering reaction rate between wafer and chemical treatment liquid. The invention can be applied to control system, for example written into program. Thus, when abnormal situation happens, the invention avoids damaging wafer so as to reach purpose of lowering ratio of discarded wafer, and raising qualification rate.
Description
Technical field
The present invention relates to the silicon wafer process of chemical-treating facility, particularly relate to and reduce the method that wafer is scrapped unusually because of chemical-treating facility.
Background technology
In the manufacture of semiconductor, employed wet process (wet processing) is cleaned (wafer cleaning) and wet etching (wet etching) based on wafer.And the equipment that is used for carrying out wet process promptly can be described as chemical-treating facility (wet bench), generally can comprise chemical treating tank (chemical bath), ablution groove (rinsing bath), with dry slot (dryer bath) etc.The size of general chemical-treating facility all goes up several times greatly than general board, that considers dust free room effectively utilizes area, therefore general board all carries out processing on the processing procedure with 50 wafer for manifest position once, and is utilized as the mechanical arms (robot) that number do not wait transmits wafer between chemical treating tank, ablution groove and dry slot.Wherein, the quantity of mechanical arm is decided on the character and the quantity of chemical-treating facility.
Figure 1 shows that general chemical-treating facility schematic diagram, wherein chemical treating tank 10 can be divided into inside groove 12 and water jacket 14, and wafer 18 promptly in the inside groove 12 that is full of chemical pretreatment solution 16, carries out the chemical treatment processing procedure.Wherein, chemical pretreatment solution 16 is mobile, promptly can overflow after chemical pretreatment solution 16 is full of inside groove 12 and flows to water jacket 14.Then, chemical pretreatment solution 16 can be flowed out by the discharge pipe of water jacket 14, carry out heat temperature raising and filter 24 impurity screenings via motor 20 pressurizations, heater 22 after, recirculation is returned in the inside groove 12 and is utilized.
In the chemical-treating facility for example there be common chemical treatment fluid 16: SPM (sulfuric acid-hydrogenmixture) is sulfuric acid (H
2SO
4) and hydrogen peroxide (H-
2O
2) mixed solution; DHF (dilutehydrofluoric acid) is the dilute aqueous solution of etching acid (HF); BOE (buffer oxide etch) is with hydrofluoric acid and ammonium fluoride (NH
4F) the buffered hydrofluoric acid solution of Hun Heing; APM (ammonium hydrogen peroxidemixture) is ammonium hydroxide (NH
4OH) with the mixed aqueous solution of hydrogen peroxide; HPM (hydrochloricacid hydrogen peroxide mixture) is for the mixed aqueous solution of hydrogen chloride (HCl) and hydrogen peroxide etc.Chemical-treating facility uses different chemical pretreatment solutions 16, then must set different process conditions, and for example soak time, soaking temperature and chemical treating tank circular flow etc. are to carry out the chemical treatment processing procedure of wafer.
And the process conditions of the operation of mechanical arm, chemical treating tank, all can change the character of wafer behind the chemical treatment processing procedure, if operation exception appears in mechanical arm or chemical treating tank, then wafer is behind the chemical treatment processing procedure, its size and character might not conform with the processing procedure standard, and must scrap, the qualification rate of product also decreases.For example in the DHF processing procedure, if the process parameter of chemical-treating facility changes, wafer in the chemical treating tank can be because the rate of etch of hydrofluoric acid acutely changes, and makes that the etched thickness of silicon dioxide layer significantly changes on the wafer, and then the critical dimension of integrated circuit package will be above standard.Therefore, this batch wafer can't continue to be used in the successive process, and must scrap.
Summary of the invention
At above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind ofly when can be applicable to the normal but chemical treating tank generation problem of mechanical arm, reduce the method for wafer loss ratio.
Another object of the present invention is to provide a kind of and do not limit under the unusual situation of mechanical arm or chemical treating tank, all can reduce the method for wafer loss.
Another purpose of the present invention is to provide a kind of and is applicable in the processing procedure that contains the hydrofluoric acid chemical pretreatment solution, and is following unusually in chemical-treating facility, can reduce the method for wafer loss.
For achieving the above object, the method that reduces the wafer loss ratio in the chemical-treating facility of the present invention comprises: a chemical treating tank is provided, this chemical treating tank has an inside groove that connects quick exhaust valve, and a water jacket that connects drain valve, and has chemical pretreatment solution in the chemical treating tank; Carry out a chemical treatment processing procedure, a wafer is inserted in the chemical pretreatment solution carry out; One abnormality alarm takes place; Open the quick exhaust valve of inside groove and the drain valve of water jacket simultaneously, can discharge outside the chemical treating tank so as to making chemical pretreatment solution; Judge whether a liquid level of remaining chemical pretreatment solution is lower than a standard liquid level in the chemical treating tank; If the liquid level of remaining chemical pretreatment solution is lower than the standard liquid level in the chemical treating tank, then close the quick exhaust valve of inside groove, and open the supply valve of ultra-pure water, make ultra-pure water can inject inside groove.In addition, other method of the present invention also can only be opened the drain valve of water jacket after abnormality alarm takes place, chemical pretreatment solution can be discharged outside the chemical treating tank, and open the supply valve of ultra-pure water simultaneously, makes ultra-pure water can inject the chemical treating tank inside groove.The another method of the present invention also can utilize mechanical arm that wafer is moved in the ablution groove after abnormality alarm takes place, and suffers the infringement of chemical pretreatment solution to prevent wafer.
Utilize the method that reduces the wafer loss ratio in the chemical-treating facility of the present invention, can have the advantage of saving the wafer manufacturing cost and improving the wafer production qualification rate.
Brief Description Of Drawings
In order further to understand technological means and the effect thereof that the present invention takes for the predetermined purpose of realization, see also following detailed description and accompanying drawing about the specific embodiment of the invention, yet appended accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
In the accompanying drawing,
Fig. 1 is general chemical-treating facility schematic diagram;
Fig. 2 is according to the operational flowchart that reduces the wafer loss ratio in the chemical-treating facility of one embodiment of the invention;
Fig. 3 a-Fig. 3 b is according to the operation of equipment schematic diagram that reduces the method for wafer loss ratio in Fig. 2 chemical-treating facility;
Fig. 3 c-Fig. 3 e is the processing procedure schematic diagram of an embodiment of Fig. 3 b ablution groove;
Fig. 4 is according to the operational flowchart that reduces the wafer loss ratio in the chemical-treating facility of another embodiment of the present invention;
Fig. 5 a-Fig. 5 b is according to the operation of equipment schematic diagram that reduces the method for wafer loss ratio in Fig. 4 chemical-treating facility;
Fig. 6 is according to the operational flowchart that reduces the wafer loss ratio in the chemical-treating facility of another embodiment of the present invention; And
Fig. 7 is according to the operation of equipment schematic diagram that reduces the method for wafer loss ratio in Fig. 6 chemical-treating facility.
Embodiment
General wafer clean or the chemical treatment processing procedure of wet etching processing procedure in, cause the reason of wafer loss to have easily: (1) soak time is unusual; (2) soaking temperature is unusual; (3) the chemical pretreatment solution circular flow is unusual; (4) board has a power failure unusually; And, the mechanical arm operation exception of (5) board etc.No matter above-mentioned which kind of reason takes place, etching or the clean speed of wafer in chemical treating tank is changed, make the size of components in the wafer exceed the processing procedure standard easily, and can't continue to be applied in the follow-up processing procedure.The present invention discloses three kinds of counter-measures, can be respectively according to actual processing procedure and product needed, and be applied in the chemical treatment processing procedure, so can reach the purpose that reduces the wafer loss ratio.
Figure 2 shows that the operational flowchart that reduces the wafer loss ratio in the chemical-treating facility of one embodiment of the invention, and Fig. 3 a-Fig. 3 b is depicted as the operation of equipment schematic diagram according to the method for Fig. 2.See also Fig. 2, Fig. 3 a and Fig. 3 b, general chemical treating tank 150 can be divided into water jacket 149 and inside groove 148, and wafer 154 carries out the chemical treatment processing procedure in the inside groove 148 that is full of chemical pretreatment solution 152.Wherein, chemical pretreatment solution 152 constantly injects inside groove 148 via pipeline, after chemical pretreatment solution 152 is filled with inside groove 148, promptly can flow to water jacket 149, and via behind pressurization, heating and the filtration step, inside groove 148 is returned in recirculation again.The chemical treatment processing procedure is monitored the manufacturing situation of wafer by control system, if note abnormalities then alarm can be provided.The control system of supposing the chemical treatment processing procedure finds that an abnormality alarm takes place 50, be that process parameter by the chemical treating tank institute of ging wrong causes, for example above-mentioned soak time is unusual, soaking temperature unusual or the chemical pretreatment solution circular flow is unusual, under the exercisable situation of mechanical arm between then normal, board at the board power supply, the present invention can carry out step 52,54,56 and 58 in regular turn, utilize mechanical arm 156, wafer is taken out from chemical treating tank 150, and in immigration and chemical treating tank 150 ablution groove 160 of being arranged in pairs or groups.The method of this reduction wafer loss ratio of the present invention utilizes mechanical arm that wafer is inserted in the ablution groove, stops the infringement of wafer to reduce chemical pretreatment solution that wafer is carried out chemical reaction rate.
Because chemical treating tank 150 can be according to the difference of chemical pretreatment solution 152 wherein, do collocation with ablution groove 160 respectively with different clean steps, therefore ablution groove had detergent remover and clean step, not in order to limit scope of the present invention, this detergent remover and clean step, all visual processing procedure, board and product and change, general wafer factory utilizes ultra-pure water 162 with as the detergent remover in the ablution groove more.For instance, with SPM, HPM and APM chemical treating tank 150 as chemical pretreatment solution, many with have quick drain and clean the ablution groove 160 of (quick dump rinsing) system and do collocation.The operation of this fast drain system is shown in Fig. 3 c to Fig. 3 e, and after wafer 154 was inserted ablution groove 160, ultra-pure water 162 can constantly inject ablution groove 160, also constantly overflows outside the ablution groove 160.Then, the supply valve of ultra-pure water 162 cuts out, and the ultra-pure water 162 in the ablution groove 160 is all emitted, then, repeat to inject ultra-pure water 162 again to carry out the cleaning of wafer 154.Perhaps, to contain the chemical pretreatment solution of hydrofluoric acid, for example DHF and BOE, this type of chemical treating tank more than 150 is done collocation with the ablution groove 160 with overflow (overflow based) system, promptly only shown in Fig. 3 c, utilize and constantly inject ultra-pure water 162, till wafer reaches clean purpose.
In addition, if above-mentioned abnormality alarm then can't be applicable to the method that reduces the wafer loss ratio in the invention described above chemical-treating facility because board power supply or mechanical arm produce unusually.Therefore, the present invention proposes to reduce in another chemical-treating facility the method for wafer loss ratio, it is unusual not to be only applicable to board power supply or mechanical arm, and unusual situation takes place the process parameter of chemical treating tank such as be applicable to also that above-mentioned soak time is unusual, soaking temperature is unusual or the chemical pretreatment solution circular flow is unusual.See also Fig. 4, Fig. 5 a and Fig. 5 b, find an abnormality alarm when the control system of chemical treatment processing procedure and take place 70, then the present invention carries out step 72,74 and 76.At first, open quick exhaust valve (the quick drainvalve) 176 of the inside groove 168 of chemical treating tank 170 and the drain valve (drain valve) 178 of water jacket 169 simultaneously, chemical pretreatment solution 172 is wherein discharged outside the chemical treating tank 170 fast.Then, can whether be lower than standard by the liquid level of remaining chemical pretreatment solution 172 in low level sensor (not shown) the sensing chemical treating tank 170 of device in chemical treating tank, perhaps, by the drain time of chemical treatment process set chemical pretreatment solution 172, can learn that after reaching certain drain time all chemical pretreatment solutions 172 all are discharged from outside the chemical treating tank 170.After all chemical pretreatment solutions 172 are discharged from chemical treating tank 170, promptly close the quick exhaust valve 176 of inside groove 168, and open the supply valve 180 of ultra-pure water 182, make ultra-pure water 182 can inject inside groove 168.
In this method of the present invention, inside groove 168 need be selected quick exhaust valve 176 for use, makes that all chemical pretreatment solution 172 quick drain finish in the chemical treating tank 170, and preferable drain time was about in 1 minute.In a preferred embodiment, the volume of the inside groove 168 of original general chemical treating tank 170 is 30 liters, employed drain valve caliber is 3/4 inch, therefore the drain time of chemical pretreatment solution 172 is about 3 minutes, but the present invention utilizes caliber greater than 1 inch quick exhaust valve 176, the drain time of chemical pretreatment solution 172 can be foreshortened in about 30 seconds, so can lower the injury of 172 pairs of wafers 174 of chemical pretreatment solution.With the DHF chemical treating tank is example, suppose that the inside groove volume is 30 liters, process temperatures is 25 ℃, processing procedure concentration is 100: 1 (0.5%), etching ratio to silicon dioxide layer on the wafer is per minute 31.5 , different according to drain valve kind and drain time then, the etched thickness of silicon dioxide layer is also different, and is as shown in the table:
| The drain valve kind | Drain time | Etched thickness () |
| General drain valve | 3 minutes | ????94.5 |
| Quick exhaust valve | 0.5 minute | ????15.75 |
Hence one can see that, and the present invention selects for use quick exhaust valve 176 can improve the infringement of 172 pairs of wafers 174 of chemical pretreatment solution really.In addition, the caliber flow of ultra-pure water 182 needs inside groove 168 volumes of fiting chemical treatment trough 170.General ultra-pure water 182 employed calibers are about 4/8 inch, and 10 liters of flow per minutes, but in a preferred embodiment of the present invention, the caliber that makes ultra-pure water 182 is greater than 4/8 inch, and flow rises to 30 liters of per minutes, and then the time of ultra-pure water 182 displacement chemical pretreatment solutions 172 is 1 minute.If again with the flow enhancement of ultra-pure water 182 to 45 liters of per minutes, then time swap can be reduced to 0.7 minute.Wherein, ultra-pure water flow and caliber that utilization of the present invention is bigger, its purpose is at chemical pretreatment solution 172 residual volumes that reduce wafer 174 surfaces, to reduce wafer 174 because of surface roughness that chemical reaction was increased.
In addition, the present invention also contains the chemical treating tank of the chemical pretreatment solution of hydrofluoric acid at application, the chemical pretreatment solution of DHF or BOE for example, a kind of method that reduces the wafer loss ratio is provided, also is applicable to the board power supply, mechanical arm is unusual, soak time is unusual, soaking temperature is unusual or chemical pretreatment solution circular flow any chemical-treating facility such as unusual takes place by unusual following use of situation.See also Fig. 6 and Fig. 7, find an abnormality alarm when the control system of chemical treatment processing procedure and take place 90, the present invention then carries out step 92 to reduce the wafer loss ratio.In step 92, comprise and open the drain valve 198 that is connected to chemical treating tank 190 water jackets 189, so as to chemical pretreatment solution 192 can be discharged outside the chemical treating tank 190, and open the supply valve 196 of ultra-pure water simultaneously, can inject the inside groove 188 of chemical treating tank 190 so as to making ultra-pure water.The present invention constantly injects inside groove 188 with ultra-pure water, so chemical pretreatment solution 192 is also constantly diluted and discharge, after after a while, the existence of ultra-pure water molecule can only be arranged in the chemical treating tank 190.Owing to containing chemical pretreatment solution 192 systems of hydrofluoric acid solution and being not suitable for wafer 194 is exposed in the air, so the present invention does not resemble an embodiment all chemical pretreatment solutions is discharged, but utilize the ultra-pure water that constantly injects, concentration with the diluted chemical treatment fluid, so also can reach the purpose that reduces chemical reaction rate, thereby reduce infringement wafer.
The method that the present invention is reduced the wafer loss ratio is applied in the wafer manufactory, is for example write as the program (recipe) in the control system (control system) at chemical-treating facility, can reduce the wafer loss ratio really.Because the manufacturing cost costliness of every wafer reduces the wafer loss ratio and can save many costs expenditures, has great effect in the application of industry and the development.
Understand as the person skilled in the art, the above only is preferred embodiment of the present invention, is not in order to limit claim of the present invention; Every other changes or modifies not breaking away from the equivalence finished under the disclosed design, all should be included in the described claim.
Claims (8)
1, reduce the method for wafer loss ratio in a kind of chemical-treating facility, comprise at least:
One chemical treating tank is provided, and wherein this chemical treating tank has an inside groove that connects a quick exhaust valve, and a water jacket that connects a drain valve, and this chemical treating tank has a chemical pretreatment solution;
Carry out a chemical treatment processing procedure, a wafer is inserted in this chemical pretreatment solution;
When an abnormality alarm takes place when, open the quick exhaust valve of this inside groove and the drain valve of this water jacket simultaneously, can discharge outside this chemical treating tank so as to making this chemical pretreatment solution;
Judge whether a liquid level of remaining this chemical pretreatment solution is lower than a standard liquid level in this chemical treating tank; And
If this liquid level of remaining this chemical pretreatment solution is lower than this standard liquid level in this chemical treating tank, then close the quick exhaust valve of this inside groove, and open a supply valve of a ultra-pure water, make this ultra-pure water can inject this inside groove.
2, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 1, wherein said chemical pretreatment solution is selected from the mixed solution of sulfuric acid and hydrogen peroxide, the mixed aqueous solution that dilutes buffered hydrofluoric acid solution, ammonium hydroxide and hydrogen peroxide that the etching acid aqueous solution, hydrofluoric acid mixes with ammonium fluoride and the mixed aqueous solution of hydrogen chloride and hydrogen peroxide.
3, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 1, the volume of wherein said chemical treating tank is 30 liters.
4, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 3, the caliber of wherein said quick exhaust valve is greater than one inch.
5, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 3, the delivery rate of wherein said ultra-pure water is greater than 30 liters of per minutes.
6, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 1, wherein said chemical treatment processing procedure comprises the clean and wet etching processing procedure of wafer.
7, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 1, the determining step that whether liquid level of remaining this chemical pretreatment solution is lower than this standard liquid level in the wherein said chemical treating tank can utilize a low level sensor that is positioned at this inside groove to judge.
8, reduce the method for wafer loss ratio in the chemical-treating facility as claimed in claim 1, the determining step that whether liquid level of remaining chemical pretreatment solution is lower than this standard liquid level in wherein said this chemical treating tank can be judged by a drain time of setting this chemical pretreatment solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021506205A CN1499583A (en) | 2002-11-05 | 2002-11-05 | Method for reducing proportion of discarding wafer in chemical-treating facility |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021506205A CN1499583A (en) | 2002-11-05 | 2002-11-05 | Method for reducing proportion of discarding wafer in chemical-treating facility |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1499583A true CN1499583A (en) | 2004-05-26 |
Family
ID=34233999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA021506205A Pending CN1499583A (en) | 2002-11-05 | 2002-11-05 | Method for reducing proportion of discarding wafer in chemical-treating facility |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1499583A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386062A (en) * | 2010-09-01 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Wafer-cleaning control device and wafer-cleaning control method |
| CN102828184A (en) * | 2011-06-15 | 2012-12-19 | 尚德太阳能电力有限公司 | Fluid infusion apparatus and wet etching system of solar cell chip containing fluid infusion apparatus |
| CN107564841A (en) * | 2017-08-31 | 2018-01-09 | 长江存储科技有限责任公司 | The ameliorative way and device of a kind of wafer cleaning defects |
| CN111383958A (en) * | 2018-12-27 | 2020-07-07 | 东京毅力科创株式会社 | Substrate liquid processing apparatus |
-
2002
- 2002-11-05 CN CNA021506205A patent/CN1499583A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386062A (en) * | 2010-09-01 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Wafer-cleaning control device and wafer-cleaning control method |
| CN102828184A (en) * | 2011-06-15 | 2012-12-19 | 尚德太阳能电力有限公司 | Fluid infusion apparatus and wet etching system of solar cell chip containing fluid infusion apparatus |
| CN107564841A (en) * | 2017-08-31 | 2018-01-09 | 长江存储科技有限责任公司 | The ameliorative way and device of a kind of wafer cleaning defects |
| CN111383958A (en) * | 2018-12-27 | 2020-07-07 | 东京毅力科创株式会社 | Substrate liquid processing apparatus |
| CN111383958B (en) * | 2018-12-27 | 2024-06-07 | 东京毅力科创株式会社 | Substrate liquid processing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6532974B2 (en) | Process tank with pressurized mist generation | |
| US20060011214A1 (en) | System and method for pre-gate cleaning of substrates | |
| US20080295862A1 (en) | Method of and apparatus for cleaning substrate | |
| US20230256479A1 (en) | Substrate processing method and substrate processing device | |
| CN101479831A (en) | Post etch wafer surface cleaning with liquid meniscus | |
| TWI637435B (en) | Substrate processing device and substrate processing method | |
| JP2007123393A (en) | Substrate-treating device | |
| CN1338771A (en) | Method for cleaning semiconductor wafer | |
| US20040151062A1 (en) | Automatic chemical mixing system | |
| CN115148643A (en) | Wet etching equipment and wet etching method | |
| CN1499583A (en) | Method for reducing proportion of discarding wafer in chemical-treating facility | |
| US6273099B1 (en) | Simplified method for cleaning silicon wafers after application of laser marks | |
| US20050271985A1 (en) | Method, apparatus and system for rinsing substrate with pH-adjusted rinse solution | |
| TWI797826B (en) | Processing liquid circulation method and substrate processing method | |
| CN213988838U (en) | Wet cleaning equipment with concentration self-adjusting function | |
| CN100362633C (en) | Plasma cleaning method for removing silicon chip surface particle after etching process | |
| CN1292822C (en) | Cleaning device for use in cleaning liquid circulating system for increasing filter life | |
| US20030209259A1 (en) | Method for decreasing wafer scrap rate for a chemical treatment apparatus | |
| US6941956B2 (en) | Substrate treating method and apparatus | |
| US6245158B1 (en) | Wet processing methods for the manufacture of electronic components using liquids of varying temperature | |
| US20030106572A1 (en) | System and method for ozonated water cleaning | |
| CN104241173A (en) | Low-temperature polycrystalline silicon thin film manufacturing mechanism and method | |
| JP2001526460A (en) | Wet processing method for manufacturing electronic components | |
| KR100732775B1 (en) | Cleaning bath for regenerating a dummy wafer and method of cleaning the dummy wafer using the same | |
| TW468205B (en) | Device and method to prevent the re-adsorption of micro particles in wafer cleaning process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |