CN1495443A - 藉微影曝光之反射镜及制造方法 - Google Patents
藉微影曝光之反射镜及制造方法 Download PDFInfo
- Publication number
- CN1495443A CN1495443A CNA031525296A CN03152529A CN1495443A CN 1495443 A CN1495443 A CN 1495443A CN A031525296 A CNA031525296 A CN A031525296A CN 03152529 A CN03152529 A CN 03152529A CN 1495443 A CN1495443 A CN 1495443A
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- China
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- hydrogen peroxide
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 23
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000010276 construction Methods 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 241000209094 Oryza Species 0.000 claims description 17
- 235000007164 Oryza sativa Nutrition 0.000 claims description 17
- 235000009566 rice Nutrition 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 238000006701 autoxidation reaction Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 108091092195 Intron Proteins 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Theoretical Computer Science (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Multi Processors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10235255A DE10235255B4 (de) | 2002-08-01 | 2002-08-01 | Reflektierender Spiegel zur lithographischen Belichtung und Herstellungsverfahren |
DE10235255.0 | 2002-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1495443A true CN1495443A (zh) | 2004-05-12 |
CN1252539C CN1252539C (zh) | 2006-04-19 |
Family
ID=30469338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03152529.6A Expired - Fee Related CN1252539C (zh) | 2002-08-01 | 2003-08-01 | 藉微影曝光的反射镜及制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7060399B2 (zh) |
CN (1) | CN1252539C (zh) |
DE (1) | DE10235255B4 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1508853A1 (en) * | 2003-08-19 | 2005-02-23 | STMicroelectronics Limited | Computer system and method for loading non-aligned words |
DE102004031079B4 (de) | 2004-06-22 | 2008-11-13 | Qimonda Ag | Verfahren zur Herstellung einer Reflexionsmaske |
US20080240168A1 (en) * | 2007-03-31 | 2008-10-02 | Hoffman Jeffrey D | Processing wireless and broadband signals using resource sharing |
GB2455797B (en) * | 2007-12-21 | 2010-04-28 | Weston Aerospace Ltd | Method and apparatus for monitoring the rotational speed of a shaft |
US8018225B2 (en) * | 2008-11-25 | 2011-09-13 | General Electric Company | System and method for sensing the periodic position of an object |
DE102010029570A1 (de) * | 2010-06-01 | 2011-12-01 | Carl Zeiss Smt Gmbh | Substrat für optische Elemente |
CN104854056B (zh) | 2012-12-11 | 2018-04-20 | 陶氏环球技术有限责任公司 | 包含非离子型疏水改性纤维素醚的胶结组合物和其用途 |
DE102013222330A1 (de) | 2013-11-04 | 2015-05-07 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
DE102021212874A1 (de) * | 2021-11-16 | 2023-05-17 | Carl Zeiss Smt Gmbh | Verfahren zum Abscheiden einer Deckschicht, EUV-Lithographiesystem und optisches Element |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI267704B (en) * | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
US6673524B2 (en) * | 2000-11-17 | 2004-01-06 | Kouros Ghandehari | Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method |
CN1842900A (zh) * | 2003-07-31 | 2006-10-04 | Fsi国际公司 | 非常均匀的氧化物层、尤其是超薄层的受控生长 |
-
2002
- 2002-08-01 DE DE10235255A patent/DE10235255B4/de not_active Expired - Fee Related
-
2003
- 2003-08-01 CN CN03152529.6A patent/CN1252539C/zh not_active Expired - Fee Related
- 2003-08-01 US US10/632,752 patent/US7060399B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1252539C (zh) | 2006-04-19 |
DE10235255B4 (de) | 2004-08-12 |
US20040030814A1 (en) | 2004-02-12 |
DE10235255A1 (de) | 2004-02-19 |
US7060399B2 (en) | 2006-06-13 |
US20050027905A9 (en) | 2005-02-03 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG |
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CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
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TR01 | Transfer of patent right |
Effective date of registration: 20130704 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160114 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060419 Termination date: 20160801 |
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CF01 | Termination of patent right due to non-payment of annual fee |