CN1492265A - Colour filter plate and its producing method and liquid crystal display device including colour filter plate - Google Patents

Colour filter plate and its producing method and liquid crystal display device including colour filter plate Download PDF

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Publication number
CN1492265A
CN1492265A CNA021542708A CN02154270A CN1492265A CN 1492265 A CN1492265 A CN 1492265A CN A021542708 A CNA021542708 A CN A021542708A CN 02154270 A CN02154270 A CN 02154270A CN 1492265 A CN1492265 A CN 1492265A
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color filter
filter plate
light
electrode
thickness
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CNA021542708A
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Chinese (zh)
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卢水贵
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority to CNA021542708A priority Critical patent/CN1492265A/en
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Abstract

The present invention discloses a kind of color filter, its manufacture and LCD with the color filter. The LCD includes one upper panel and one lower panel opposite each other. The lower panel has several formed grid lines and data lines to define the pixel region in matrix arrangement, and has also film transistors to connect grid lines and data lines and pixel electrodes connected to the film transistors. The pixel electrodes include transparent electrodes and reflecting electrodes with permeating window and high reflectivity. The upper panel has formed black matrix with holes corresponding to the pixel region and red, green and blue color filters, and each of the color filters includes thicker part corresponding to the permeating window and thinner part.

Description

Color filter plate, its manufacture method and comprise the LCD of color filter plate
Technical field
The present invention relates to color filter plate, its manufacture method and LCD, especially comprise Transflective (transflective) LCD of color filter plate.
Background technology
LCD (" LCD ") is one of most popular flat-panel monitor, it comprises having two flat boards that produce electrode and be arranged on liquid crystal layer between the flat board, and it controls the transmissivity that light passes liquid crystal layer by the voltage that adjusting is applied on the electrode with the liquid crystal molecule of resetting in the liquid crystal layer.
In those LCD most popular a kind of be such: it has electrode on each plate, also have a plurality of thin film transistor (TFT)s (" TFT ") that are applied to the voltage on the electrode that are used to switch.Usually, TFT is arranged on one of two plates.
This LCD can be divided into two types, and a kind of is transmission-type, comes display image by making from the light transmission liquid crystal layer that is called specific light source backlight; Another kind is reflective, by with external light source for example natural light utilize the reflector of LCD to reflex to liquid crystal layer to come display image.Now, developing Transflective LCD with transmission mode and two kinds of pattern work of reflective-mode.
On the other hand, Chang Gui LCD is equipped with the red, green, blue color filter to realize colored the demonstration.Pass the light transmission of each red, green, blue color filter by control, obtain coloured image.Because the characteristic of display device, the effect of color is different in display device; By the thickness of regulating color filter or the density that is distributed in pigment in the color filter, revise or obtain the difference of color effects in display device.
Because the light quantity difference of passing color filter, so Transflective LCD demonstrates uneven colorrendering quality (color reproducibility) between the pattern of seeing through and reflective-mode, and this causes the reduction of display characteristic.That is to say that the light that is transmission mode passes liquid crystal layer and color filter only once arrives user's eyes, and the light that is reflective-mode passes liquid crystal layer and color filter twice.Therefore, the color effects in two kinds of patterns is different.
Summary of the invention
A kind of LCD is provided, comprises: substrate; And be formed on the substrate and have color filter by the thickness of determining positions.
LCD preferably includes first viewing area and main second viewing area that is arranged on inner light source display image of adopting that main employing exterior light is come display image.The thickness of color filter is preferably less than in second viewing area in first viewing area.
According to embodiments of the invention, color filter comprises first and the second portion that has greater than the thickness of first, and first is around second portion.
Preferably, color filter plate also comprises near be positioned at the color filter edge black matrix (black matrix) and is thicker and be positioned near the color filter edge third part than first.Preferably, the third part of color filter covers black matrix at least in part.
According to embodiments of the invention, color filter plate also is included in the common electrode on the substrate.
A kind of method of making LCD with color filter plate is provided, comprises: on substrate, apply the light-sensitive surface that contains pigment; Light-sensitive surface is exposed to light by at least one mask that has for luminous energy by the transmissivity of determining positions; Form a plurality of color filters, develop by making light-sensitive surface, each color filter has the thickness by determining positions.
According to embodiments of the invention, at least one mask comprises first, second, third zone, in the first area, second area neutralizes in the 3rd zone, sequentially increases for the transmissivity of luminous energy.Second area preferably includes slot pattern or latticed figure.
According to embodiments of the invention, light-sensitive surface is the negative photosensitive film, further comprises monomer, Photoepolymerizationinitiater initiater and bonding agent.Preferably, insoluble in 20% to 60% scope in light-sensitive surface at least a portion after the exposure.
A kind of transflective lcd is provided, and it comprises: have first panel of color filter, this color filter has the thickness by determining positions; Second panel of relative first panel, it comprises a generation electrode, a generation electrode comprises transparency electrode and the reflecting electrode with opening on transparency electrode.
Preferably, color filter comprises first with first thickness and the second portion that has greater than second thickness of first thickness, and second portion is facing to opening.
According to embodiments of the invention, transparency electrode is positioned at the below of reflecting electrode, and second panel also comprises the insulation course that is arranged between transparency electrode and the reflecting electrode.Insulation course preferably includes inhomogeneous figure.
According to embodiments of the invention, second panel also comprises gate line, data line and the thin film transistor (TFT) that is electrically connected with gate line, data line and transparency electrode.
Description of drawings
By preferred embodiments of the present invention will be described in detail with reference to the annexed drawings, above-mentioned and other purposes of the present invention and advantage will become more apparent.Wherein:
Fig. 1 is the layout according to the tft array panel of the Transflective LCD of the embodiment of the invention;
Fig. 2 is the sectional view of the LCD that comprises the tft array panel of II-II ' along the line intercepting shown in Figure 1;
Fig. 3 A-3C is the sectional view according to the color filter plate of Transflective LCD in the manufacture method step of the embodiment of the invention;
Fig. 4 is the curve map of residual thickness and the funtcional relationship of exposure energy flux of the photoresist film of expression red, green and blue color filter;
Fig. 5 is the curve map that expression has the funtcional relationship of the transmissivity of red, green and blue color filter of different-thickness and optical wavelength;
Fig. 6 is the curve map of color coordinates that expression has the red, green and blue color filter of different-thickness;
Fig. 7 A, 8A, 9A, 10A, 11A and 12A are the layouts according to the tft array panel of Transflective LCD in the step of manufacturing of the embodiment of the invention;
Fig. 7 B is the sectional view of the VIIB-VIIB ' along the line of tft array panel shown in Fig. 7 A intercepting;
Fig. 8 B is the sectional view of the tft array panel VIIIB-VIIIB ' along the line intercepting shown in Fig. 8 A, and this is the next procedure of Fig. 7 B;
Fig. 9 B is the sectional view of the tft array panel IXB-IXB ' along the line intercepting shown in Fig. 9 A, and this is the next procedure of Fig. 8 B;
Figure 10 B is the sectional view of the tft array panel XB-XB ' along the line intercepting shown in Figure 10 A, and this is the next procedure of Fig. 9 B;
Figure 11 B is the sectional view of the XIB-XIB intercepting along the line of the tft array panel shown in Figure 11 A, and this is the next procedure of Figure 10 B; And
Figure 12 B is the sectional view of the XIIB-XIIB ' along the line intercepting of Figure 12 A, and this is the next procedure of Figure 11 B.
Embodiment
Below with reference to accompanying drawing the present invention is described more fully, the preferred embodiments of the present invention shown in the drawings.But the present invention can realize with many different forms, and should not be confined at the embodiment shown in this.In the accompanying drawings, for the sake of clarity, exaggerated the thickness in layer and zone.Identical Reference numeral is represented components identical from start to finish.Should be understood that when with element for example floor, film, district, substrate or panel be called another element " on " time, can directly above the element, perhaps also can there be intervenient element in this element at another.On the contrary, when element being called " directly on another element ", just there is not intervenient element.So, color filter plate, transflective lcd and manufacture method thereof according to the embodiment of the invention will be described with reference to the drawings.
At first, with reference to the structure of Fig. 1 and 2 detailed description according to the LCD of the embodiment of the invention.
Fig. 1 is the layout according to the tft array panel of the Transflective LCD of the embodiment of the invention; Fig. 2 is the sectional view that comprises the LCD II-II ' along the line of tft array panel shown in Figure 1.
As illustrated in fig. 1 and 2, comprise the upper and lower panel 400 that faces with each other and 600 and be arranged on liquid crystal layer between them according to the LCD of the embodiment of the invention.
Many gate lines 22 and many data lines 62 are formed on the lower panel 400, and they intersect each other to limit a plurality of pixel region P that are arranged in the matrix.In each pixel region P, connection gate line line and the TFT of data line 22 and 62 and the pixel electrode that is electrically connected to TFT are set.Each pixel electrode comprises preferably transparency electrode of being made by nesa coating 82 and the reflecting electrode 92 of preferably being made and being had transmission window 96 by the reflectivity conducting film.Below, the zone that is occupied by transmission window 96 is called " seeing through the district " T, and the remainder of pixel region P is called " echo area " R.In addition, below lower panel is called identical title and Reference numeral corresponding to the zone that sees through district T and echo area R.
Form the black matrix 120 that has corresponding to the opening of pixel region P in the above on the plate 600, on each pixel region P, form red, the green or blue color filter 130 that covers by common electrode 140.For each color filter 130 of red, green and blue, be in part 132 among the R of echo area have with see through the district in the different thickness of another part 134.In this embodiment, see through part 132 among the district T and have the thickness bigger than the part in the R of echo area 134.
Herein, echo area R mainly is the light display image that is used to utilize from reflecting electrode 92 reflections, mainly is the light display image that is used to be used to from backlight and see through district T, and backlight is the light source of himself.
In the LCD of this embodiment according to the present invention, the image in seeing through district T be by pass color filter 130 only once light produce; And those images among the R of echo area are to be produced by such light: this light reaches reflecting electrode 92 after once passing color filter 130, passes color filter 130 once more then after by reflecting electrode 92 reflections.Because the thickness of color filter 130 in the R of echo area is less than in seeing through district T, almost be through color filter 130 with identical degree with two kinds of light among the R therefore at two regional T.Therefore, the colorrendering quality of two regional T and R is equated, improve the display performance of LCD thus.
Next, detailed description is according to the structure of the lower panel 400 of the LCD of the embodiment of the invention.
Lower panel 400 comprises dielectric substrate 10.On substrate 10, form basically many gate lines 22 with lateral extent.Each gate line 22 has single layer structure, and it is preferably made by low-resistance material, for example silver, silver alloy, aluminum or aluminum alloy.Optionally, each gate line 22 has sandwich construction, comprises one or more layers that made by the material of listing above, preferably includes the one deck at least that has good contact performance with other material.Near each gate line 22 1 end part 24 is transferred to gate line 22 with gate signal from external device (ED), and many branches 26 of each gate line 22 are as the gate electrode 26 of TFT.
Preferred gate insulation layer 30 covering gate polar curves of making by silicon nitride (SiNx) etc. 22.
Form a plurality of semiconductor islands 40 of preferably making on respect to the gate insulation layer 30 of gate electrode 26 by amorphous silicon hydride, on semiconductor island 40, form preferably by silicide or with n type impurity severe doped n+amorphous silicon hydride make many to Ohmic contact portion 55 and 56.With respect in the gate line 22 pairing one, the contact site 55 in the every pair of Ohmic contact portion 55 and 56 separates with another contact site 56.
Ohmic contact portion 55 and 56 and gate insulation layer 30 on form many data lines 62 and a plurality of drain electrode 66.Data line 62 and drain electrode 66 preferably include has low-resistance conductive material, for example aluminium or silver.Data line 62 basically with extending longitudinally to intersect with gate line 22.Many the branches 65 of data line 62 be stretched over each to the upper surface of the contact site in Ohmic contact portion 55 and 56 55 to form a plurality of source electrodes of TFT.Near each data line 62 1 end part 68 is transferred to data line 62 with data-signal from external source.With respect to corresponding gate electrode 26, the drain electrode of TFT 66 separates with data line 62, and is positioned at each to above Ohmic contact portion 55 and 56 other contact site 56 relative with source electrode 65.
Form passivation layer 70 on the part that is not covered by data line 62 or drain electrode 66 of data line 62, drain electrode 66 and semiconductor island 40, this passivation layer is preferably made by silicon nitride or organic material with good leveling.
Pass a plurality of contact holes 76 and 78 that passivation layer 70 forms the end 68 of exposing drain electrode 66 and data line 62 respectively, a plurality of other contact holes 74 of the end 24 of exposing gate line 22 are set in passivation layer 70 and gate insulation layer 30.
Form a plurality of transparency electrodes 82 on the passivation layer 70 of pixel region P, transparency electrode 82 is electrically connected to drain electrode 66 through contact hole 76.In addition, form a plurality of contact auxiliary members 84,88 on passivation layer 70, these contact auxiliary members 84,88 are connected to the end 24 of gate line 22 and the end 68 that is connected to data line 62 through contact hole 78 through contact hole 74 respectively.Transparency electrode 82 with contact auxiliary member 84,88 and preferably make, for example ITO (tin indium oxide) or IZO (indium zinc oxide) by transparent conductive material.
On transparency electrode 82, form interlayer insulating film 34.Interlayer insulating film 34 is preferably made by silicon nitride, monox or organic insulation, and has a plurality of contact holes 36 that expose transparency electrode 82 to small part.
On interlayer insulating film 34, form a plurality of reflecting electrodes 92.Each reflecting electrode 92 is connected to relevant transparency electrode 82 through suitable contact hole 36, and each reflecting electrode 92 has transmission window 96.Reflecting electrode 92 is preferably made by the conducting film with high reflectance, for example aluminium, aluminium alloy, silver, silver alloy, molybdenum or molybdenum alloy.At this, preferably, interlayer dielectric 34 has coarse upper surface, so that the surface of reflecting electrode 92 becomes uneven, increases the reflection of reflecting electrode 92 thus.In the reflecting electrode 92 one with relevant transparency electrode 82 constitute to forming pixel electrode.The shape of the transmission window 96 of reflecting electrode 92 is various, and the quantity of the transmission window 96 in pixel region is not limited to one, and two or more can be arranged.
One (it is transferred to gate signal the TFT of the pixel column that is adjacent) being known as previous gate line (previous gateline) 22 in each pixel electrode 82,92 and the gate line 22 is overlapping, to form holding capacitor.If the memory capacity of holding capacitor is too little, then can add other holding capacitor, a conductor and a pixel electrode 82,92 that this other holding capacitor is made by the layer identical with gate line 22 form, and are perhaps formed by other conductor that is connected to pixel electrode 82,92.
Each reflecting electrode 92 and the data line 62 that is adjacent overlap, so that the aperture of each pixel region P is than (aperture ratio) maximum.
Now, describe manufacture method in detail according to the tft array panel of the color filter plate of the embodiment of the invention and LCD.
At first, with reference to the manufacture method of figure 3A-3D detailed description according to the color filter plate of the embodiment of the invention.
As shown in Figure 3A, the material by will having good shading characteristic deposits and utilizes photomask by photoetching technique the material of this deposition to be carried out composition to the upper surface of last dielectric substrate 100, forms black matrix 120.
Then, shown in Fig. 3 B, on the upper surface of last dielectric substrate 100, cover negative photosensitive film 135.Negative photosensitive film 135 is water-fast dispersion liquids, wherein contains one of the sensitization component of photopolymerization and red, green, blue pigment, and these components comprise Photoepolymerizationinitiater initiater, monomer, bonding agent etc.After this, by mask 200 exposures, mask 200 can change the energy by light-sensitive surface 135 absorptions of zones of different A, B, C with light-sensitive surface 135.
The photopolymerization of the exposed portion of negative photosensitive film 135 causes this part to be insoluble in the alkaline-based developer.Particularly, when exposure, Photoepolymerizationinitiater initiater is activated into radical initiator, radical initiator induces monomer to produce the free radical monomer, and then, by chain polymerization, the free radical monomer polymerization becomes polymkeric substance.As a result, the exposed portion of light-sensitive surface 135 becomes soluble.
In this embodiment, the thickness of the light-sensitive surface 135 after the development is different with the position, and this is by utilizing the mask that the exposure energy that absorbed by light-sensitive surface 135 is changed, and realizes for the insoluble degree of developer solution along with the position changes light-sensitive surface 135.Will be with reference to figure 4 to this detailed description.
Fig. 4 is expression for the thickness of the remainder of the light-sensitive surface of the red, green, blue color filter curve map as the function of exposure energy flux.
The thickness of curve representation remainder shown in Figure 4 is for 30-170mJ/cm 2The little variation of the exposure energy flux in the scope is represented simultaneously for 10-30mJ/cm 2Scope in the rapid variation of exposure energy flux.That is to say, cause the rapid change of photopolymerization degree in one scope of back by the bonding agent that exposure energy determined for the rapid variation of the solubility of developer solution.This expression by in this scope inner control exposure energy flux, can be regulated the thickness of light-sensitive surface remainder at an easy rate.By changing monomer and the type of Photoepolymerizationinitiater initiater and their mixing ratio, can control slope as the thickness of the remainder of the function of exposure energy flux.
Herein, initial energy is almost completely transferred to the part of light-sensitive surface 135 in regional A, and almost completely crested and do not arrive part in the area B of initial energy.The part of light-sensitive surface 135 in zone C receives the part initial energy, and its flux range is from 10-30mJ/cm 2
Utilization has the mask 200 of the translucent portion of band slot pattern or grid pattern, can obtain zone C.When adopting slot pattern, the width of preferred slit or in the resolution of the distance between slit less than the exposure machine that in this step, adopts.Optionally, change according to the position or utilizes by the thickness that makes the layer on it and have a plurality of layer of different transmissivities, the mask 200 that obtains having translucent portion.
In this embodiment, when by mask 200 exposures, partly polymerization of the part in the zone C is preferably 20-60%.
Utilize aqueous slkali that light-sensitive surface 135 is developed.Then, shown in Fig. 3 C, obtained color filter 130, it has two parts 132,134 of different-thickness.
By the red, green, blue color filter is repeated these steps, obtained color filter array.
At last, on color filter 130 and black matrix 120, form preferably by the transparent conductive material common electrode 140 made of ITO and IZO for example.
Though this embodiment of the present invention adopts single mask 200, this mask can provide different exposure energies according to the position, and other embodiment adopts two or more masks, and each mask provides different exposure energies.
According to another embodiment of the present invention, the marginal portion of the color filter 130 that overlaps with black matrix 120 has the thickness identical with part 132 basically, shown in Fig. 3 D.That is to say that regional A is on the position between area B and the C, and on the position corresponding to transmission window.This makes that the thickness of the color filter 135 in zone C is even, and the edge of color filter 132 breaks away from when having prevented to develop.
Next, be described in through the transmissivity and the color coordinates (color coordinate) that have the red, green, blue color filter of different-thickness between district T and the echo area R.
Fig. 5 is the transmissivity and the curve map that be used for through the funtcional relationship of the incident light wavelength of distinguishing T and echo area R of expression according to the red, green and blue color filter embodiment of the invention, that have different-thickness; Fig. 6 is the curve map of expression according to the color coordinates of the red, green and blue color filter embodiment of the invention, that have different-thickness.
In seeing through district T and echo area R, the thickness of color filter is respectively about 0.8 micron and 0.4 micron.The colorrendering quality that obtains by the thickness of regulating color filter in the scope of about 0.2-2 micron is about 16%.In Fig. 5, solid line represents to see through the transmissivity of the red, green and blue color filter among the district T, and dotted line is represented among the R of echo area.In Fig. 6, " T " expression sees through the color coordinates among the district T, in " R " the expression echo area " R ".
As shown in Figure 5, the transmissivity of observing each color filter in seeing through district T and echo area R is different, and thinks that this is that difference by thickness among two regional T and the R causes.Therefore, suitably regulate color filter and make it possible to achieve different color reproduction among regional T and the R.
As shown in Figure 6, the repeatability of color is about 16% in seeing through district T, and is about 8% in the echo area.
According to NTSC (national television systems committee), the colorrendering quality of display device is defined as the triangle area of line segment of the single color point that comprises the red, green, blue look that connects display in CIE (the Commission Intemationale del ' Eclairage) color coordinate system with respect to the ratio of the standard area that is provided by NTSC.
Now, describe manufacture method in detail with reference to figure 7A-12B and Fig. 1 and 2 according to the tft array panel of the embodiment of the invention.
At first, shown in Fig. 7 A and 7B, have low-resistance conductive material and be deposited on the upper surface of lower-glass substrate 10 and composition, to form many basically along gate line 22 horizontal expansion and that comprise a plurality of gate electrodes.
Next, deposit is three layers successively, that is: the gate insulation layer of preferably being made by silicon nitride 30; The preferred semiconductor layer of making by amorphous silicon; And doped amorphous silicon layer.Utilize photomask successively to semiconductor layer and this two-layer composition that carries out of doped amorphous silicon layer on top, to form a plurality of semiconductor islands 40 and a plurality of doped amorphous silicons island 5 on it, shown in Fig. 8 A and 8B with respect to gate electrode 24.
Subsequently, the deposit conductive layer, and utilize photoetching composition to form many and gate line 22 data line crossing 62 and a plurality of drain electrode 62.Each data line 62 comprises a plurality of source electrodes 65, and source electrode 65 extends to the upper surface on corresponding doped amorphous silicon island 50.Drain electrode 66 separate with data line 62 and with respect to gate electrode 26 and with relevant source electrode 65 opposition.
After this, shown in Fig. 9 A and 9B, remove the part that is not covered on doped amorphous silicon island 50 by data line 62 and drain electrode 66, make each doped amorphous silicon island 50 is divided into two Ohmic contact portions 55 and 56 with respect to gate electrode 26, and expose the part below the part of being removed on doped amorphous silicon island 50 of semiconductor island 40.Preferably carry out oxygen plasma treatment, with the surface of the exposed portions serve on stabilization of semiconductor island 40.
Then, have for example silicon nitride of the organic material of low-k and good flatness or insulating material, form passivation layer 70 by deposit.After this, shown in Figure 10 A and 10B, come passivation layer 70 and gate insulation layer 30 are carried out composition by the dry ecthing that utilizes photoetching, to form a plurality of contact holes 74,76 and 78 of the end 68 of the end 24, drain electrode 66 and the data line 62 that expose gate line 22 respectively.
Subsequently, shown in Figure 11 A and 11B, utilize photomask deposit and composition ITO layer or IZO layer, to form a plurality of transparency electrodes 82, these transparency electrodes 82 are connected to relevant drain electrode 66 through contact hole 76, and a plurality of contact auxiliary member 86 is connected the end 24 of gate line 22 and the end 68 of data line 62 with 88 respectively through contact hole 74 and 78.
Now, shown in Figure 12 A and 12B, by the deposit organic insulation and utilize photoetching, form and have a plurality of interlayer insulating films 34 that expose the contact hole 36 of transparency electrode 82 its composition.Preferably uneven figure is arranged on the interlayer insulating film 34.
At last, as illustrated in fig. 1 and 2, the conductive layer that has a high reflectance by deposit and composition is aluminium, silver or molybdenum for example, forms a plurality of reflecting electrodes 92 that all have transmission window 96.Because the inhomogeneous figure of lower floor's interlayer insulating film 34, reflecting electrode 92 preferably has relief pattern, and this has increased the reflection of reflecting electrode 92.
The present invention is described in detail, but should be understood that and the invention is not restricted to the disclosed embodiments, on the contrary, contain the essence that is included in claims and various modifications and the equivalent arrangements in the scope with reference to preferred embodiment.

Claims (20)

1. color filter plate that is used for LCD comprises:
Substrate; And
Be formed on the substrate and have color filter by the thickness of determining positions.
2. according to the color filter plate of claim 1, wherein, LCD comprises first viewing area and main second viewing area that is arranged on light source display image wherein of adopting of main employing exterior light display image.
3. according to the color filter plate of claim 2, wherein, the thickness of the color filter in first viewing area is less than in second viewing area.
4. according to the color filter plate of claim 1, wherein, color filter comprises first and the second portion that has greater than the thickness of first, and first is around second portion.
5. according to the color filter plate of claim 4, also comprise being positioned near the black matrix in color filter edge.
6. according to the color filter plate of claim 5, wherein, color filter also comprises thicker and be positioned near the color filter edge third part than first.
7. according to the color filter plate of claim 6, wherein, the third part of color filter at least in part with black matrix crossover.
8. according to the color filter plate of claim 1, also be included in the common electrode on the substrate.
9. a manufacturing is used for the method for the color filter plate of LCD, and this method comprises:
On substrate, apply the light-sensitive surface that contains pigment;
By have at least one mask for luminous energy, light-sensitive surface is exposed to light by the transmissivity of determining positions; And
Form a plurality of color filters, each color filter is by developing light-sensitive surface to have the thickness by determining positions.
10. according to the method for claim 9, wherein, this at least one mask comprises first, second and the 3rd zone, to the transmissivity of luminous energy in the first area, second area neutralizes, and order increases in the 3rd zone.
11. according to the method for claim 10, wherein, second area comprises slot pattern or grid pattern.
12. according to the method for claim 9, wherein, light-sensitive surface is the negative photosensitive film.
13. according to the method for claim 12, wherein, light-sensitive surface also comprises monomer, Photoepolymerizationinitiater initiater and bonding agent.
14. according to the method for claim 13, wherein, at least a portion of the light-sensitive surface after the exposure insoluble in 20% to 60% scope.
15. a transflective lcd comprises:
Have first panel of color filter, this color filter has the thickness by determining positions; And
Second panel relative with first panel, second panel comprise a generation electrode, and this generation electrode comprises the reflecting electrode with opening on transparency electrode and the transparency electrode.
16. according to the transflective lcd of claim 15, wherein, color filter comprises first with first thickness and the second portion that has greater than second thickness of first thickness, first is relative with opening.
17. according to the transflective lcd of claim 16, wherein, transparency electrode is positioned at the below of reflecting electrode.
18. according to the transflective lcd of claim 17, wherein, second panel also comprises the insulation course that is arranged between transparency electrode and the reflecting electrode.
19. according to the transflective lcd of claim 18, wherein, insulation course comprises uneven figure, and reflecting electrode has rough pattern.
20. according to the transflective lcd of claim 15, wherein, second panel also comprises gate line, data line and the thin film transistor (TFT) that is electrically connected with gate line, data line and transparency electrode.
CNA021542708A 2002-10-25 2002-10-25 Colour filter plate and its producing method and liquid crystal display device including colour filter plate Pending CN1492265A (en)

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WO2014015605A1 (en) * 2012-07-27 2014-01-30 京东方科技集团股份有限公司 Color film substrate manufacturing method, color film substrate and semi-reflecting semi-transmitting liquid crystal display device
CN103794735A (en) * 2012-10-29 2014-05-14 精工爱普生株式会社 Organic el device, method of manufacturing organic el device, and electronic apparatus
CN103885293A (en) * 2012-12-20 2014-06-25 东友精细化工有限公司 Photosensitive Resin Composition And Insulating Layer Prepared From The Same
US8993043B2 (en) 2005-12-30 2015-03-31 Lg Display Co., Ltd. Method for fabricating color filter layer of liquid crystal display device and method for fabricating liquid crystal display device using the same
CN107463023A (en) * 2017-09-18 2017-12-12 惠科股份有限公司 Liquid crystal display panel and liquid crystal display
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CN1808273B (en) * 2004-12-16 2012-12-26 三星显示有限公司 Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel
CN100430808C (en) * 2005-06-27 2008-11-05 乐金显示有限公司 Transflective liquid crystal display device and method of fabricating the same
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