CN1491298A - Tantalum-silicon and niobium-silicon substrates for capacitor anodes - Google Patents

Tantalum-silicon and niobium-silicon substrates for capacitor anodes Download PDF

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CN1491298A
CN1491298A CNA028048768A CN02804876A CN1491298A CN 1491298 A CN1491298 A CN 1491298A CN A028048768 A CNA028048768 A CN A028048768A CN 02804876 A CN02804876 A CN 02804876A CN 1491298 A CN1491298 A CN 1491298A
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silicon
powder
tantalum
tan
niobium
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CN1327035C (en
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L
L·辛金斯
A·孔伦
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HC Starck GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

Ta-Si, Nb-Si, TaN-Si, NbN-Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.

Description

The tantalum-silicon and the niobium-silicon substrate that are used for capacitor anode
Invention field and background
The present invention relates to be used for the matrix of high-K capacitor, relate more specifically to go into the tantalum in the porous mass and/or the powder matrix of niobium based on system, it is by electrolysis " generation ", with the thin-oxide (normally tantalum pentoxide and/or Columbium pentoxide) that constitutes tantalum and/or niobium as dielectric layer.They use with known solid or wet electrolyte system.
Since over half a century, this tantalum/niobium powder matrix (mainly being tantalum) as the material of selecting be used to have lowly leak, the fine and close electrical condenser of the maximum capacity of low series resistance and high-breakdown-voltage level, the high request that has withstood military, computer and telecom market uses and the quality control longevity test.
In in the past 10 years, the anode porosity control that carry out in size (oxide compound of formation has bigger surface-area with respect to the anodic weight and volume) by dwindling the powder matrix, the zone that enlarges for more effective utilization, sintering control, with phosphorus and with nitrogen, silicon or sulphur matrix is mixed in some cases, so that the existing electric capacity level of electrolytic condenser lies prostrate from rising to above every gram 50000 micro farads below every gram 10000 micro farads volt.Be connected with anodic at lead production, lead, also improve aspect formation program, electrolyte system and the packing.
But, to these advanced high capacitance systems rely in leakage, series resistance, bias voltage, usually in electrical condenser production with the thermostability in using, frequency stability, loss of voltage and resistance to overturning aspect produce the expected value that makes new advances, and these new expected values are not met as yet or are that cost is met with the high yield loss only.The Ta of nitrogenize, Nb and be modified as other forms of Ta, Nb and help stability and electric capacity, but be insufficient for expected value.
Main purpose of the present invention provides a kind of capacitor matrix system, it has improved leaks, series resistance, bias-dependent, usually in electrical condenser production with thermostability, frequency stability in using, the porosity and the low dissipation coefficient (" DF ") that cause reducing equivalent series resistance (" ESR ") that have improved, compare with the system of high CV/ gram (30000 with Geng Gao).
Relevant purpose is reliably and with high yield to obtain this stability.
The invention summary
Purpose of the present invention realizes that by novel tantalum-silicon and niobium-silicon system it is preferably formed the Si powder mixes mixture together into the Ta of 90-98 weight %, Nb and 2-10 weight %.Also can be to being used for K 2TaP 7Na reductive reactor in add Si.The means that can also utilize the Si base wetting agent conduct in the Ta suspension in Ta, to mix Si with appropriate vol and form.
After thermal treatment, obtained the reinforcement (reduction) of bias-dependent, and can obtain reliably, and this result is reasonably extended now and is used for similar Ta/Nb-Si matrix system by the Ta-Si matrix system.Adopt the ionogen porous anode electrical condenser of this system preparation and under the condition that high frequency uses, to have stable performance in high-voltage formation.
Advantage of the present invention can also and be doped with known electric capacity in Ta/Nb-nitride system and improve in the Si of impurity such as P, Si, S and Ta/Nb, the Ta/Nb-nitride system and realize.
The porosity (having bigger usually hole and the aperture homogeneity of Geng Gao) that the advantage of adding silicon comprises the aperture control of sintered anode and optimizes is to produce more effective electrolyte precursors use, effective ionogen conduction path and the capacitor performance relevant with changing porosity reduced still less.
Make Si be evenly distributed on the Ta of production or a method among the Nb is to use the liquid silicone compound.Because wish to reduce the content of oxygen and carbon, preferably having organic silicon compound is type siloxane.These mainly will resolve into Si by the compound that the SiOH key constitutes under reducing atmosphere in the high-temperature process of powder.
This reducing atmosphere can provide with the ordinary skill in the art, but in order to make pollution minimum, is preferably Mg or H 2, perhaps NH.
Other purposes, feature and advantage will be below with reference to accompanying drawing to becoming clear in the detailed description of the preferred embodiments.
The accompanying drawing summary
Fig. 1 is that Ta-Si is with respect to the electric capacity figure of high capacitance type Ta (50K) electrical condenser under 1300～1550 ℃ various sintering temperatures.
Fig. 2 is that the bias voltage of comparison similar substance under various test bias voltages relies on.
Fig. 3-4 shows electric capacity and leaks with respect to sintering temperature (similar with Fig. 1), contrast Ta-Si and Ta and and TaN+Si;
Fig. 5-6 contrasts (similar with Fig. 2) Ta, Ta-Si, Ta+Si 3N 4, TaN-Si 3N 4Rely on the bias voltage of TaN-Si; With
Fig. 7-8 contrast Ta with respect to Ta-Si and TaN with respect to the volume of the increase of TaN-Si with respect to the aperture feature.
The preferred embodiment summary
United States Patent (USP) (" USP ") 4432035, Hsieh (IBM), discloses the Ta in the capacitors with thin layer on February 14th, 1984 9Si 2(the Ta that attempts before replacing 2Si), still, do not provide a method that obtains being used for the effect powder matrix of sinter electrolytes capacitor anode to this area.
The present invention starts from independent path, because by the USP 4957541 (tantalum powder of capacitor grade of T.Tripp etc.; In addition referring to the reference of citation wherein) work recognize that the suitable effect of tantalum nitride is to provide the effect powder matrix of new series.
Embodiment 1
Initial test shows, the leakage of Ta-Si powder matrix system is similar to Ta powder matrix (not progressive), but Ta-Si with respect to Ta, even under higher sintering temperature, the electric capacity of Ta-Si is enhanced, and reduces slightly under lower sintering temperature.Obviously, Si plays the effect of sintering inhibitor.
This test comprises four groups, and each Ta, Ta-Si system are averaged.Ta is standard product 50K-9010, and by the potassium tantalifluoride preparation of sodium reduction, it has the artificial result of leakage known in the art, fine grain size, doping and deoxidation.By 60 orders that mix 0.333g, 99.999% pure Si powder and the 50K-9010 powder of 9.667g, prepare Ta-Si, to be similar to Ta 9Si 2
The powder compression of two individual system is in blocks, under 1500 ℃, carry out sintering, second group of sintering under 1350～1550 ℃ all temps for first group that under 16,30,40,50,80 and 100 volts of formation voltage Vf, forms sheet.
Preparation condition and test-results are listed as follows:
Table I: the preparation of sheet, formation and test condition general view
Condition Value (s)
Tablet quality (g) 0.14
Pressed density (g/cc) 5.0
Sintering temperature (℃) 1350，1450，1550
Sintering time (minute) 20
Formation temperature (℃) 80
Form voltage (V) 16，30，40，50，80，100，120
Form electric current (mA/g) 100
Hold-time (hour) 2 hours or 5 minutes
Form ionogen 0.1V/V％H 3PO 4
DCL trial voltage (%V f) 70
Bias voltage (v) 0-20V
The DLC dipping time (minute) 5
Table II: the electricity result of tantalum silicon mixture (keeping 5 minutes)
Form voltage 1500℃CV/g?9μF·V/g) 1500℃L/C(nA/μF·V)
16 ?32,400 ?0.884
30 ?25,100 ?0.422
40 ?24,300 ?0.385
50 ?23,800 ?0.560
80 ?23,000 ?3.576
100 ?22,500 ?2.326
Table III: electric capacity (μ FV/g)
Sintering temperature 50K-9010 ??50Vf ?LFS-001 ?50Vf ?50K-9010 ?120Vf ?LFS-001 ?120Vf
?1350 ?41,500 ?31,400
?1450 ?30,600 ?24,300 ?19,000 ?20,900
?1550 ?16,100 ?19,300
Table IV: leak (nA/ μ FV/g)
Sintering temperature 50K-9010 ?50Vf ?LFS-001 ?50Vf ?50K-9010 ?120Vf ?LFS-001 ?120Vf
?1350 ?0.322 ?0.512
?1450 ?0.275 ?0.249 ?0.608 ?0.946
?1550 ?0.067 ?0.065
Table V: 140V forms electric capacity (μ FV/g) and leaks (nA/ μ FV/g)
Sintering temperature 50K-9010 electric capacity LFS001 electric capacity ?50K-9010L/C ?LFS-001L/C
?1450 ?16,900 ?16,000 ?1.230 ?0.960
?1500 ?18,600 ?0.500
The result is illustrated among Fig. 1, wherein the electric capacity of visible Ta-Si powder-base bulk capacitor (LFS) and Ta powder-base bulk capacitor (50K) are in same scope, but demonstrate under the sintering temperature that raises, descend stability and inhibiting rates less, some raisings, but in view of numerical value near and degree is fuzzy.
Embodiment 2
Other sample of preparation shown in embodiment 1, different is to expand to Ta-Si, TaN-Si and Ta-Si 3N 4:
-.333g 60M 99.999% Si and 9.667g 50K-9010;
-.3106g 60M 99.999% Si and 9.689g TaN-003;
-.545g Si 3N 4With 9.456g 50K-9010;
-.507g Si 3N 4With 9.43g TaN-003.
The Ta/Si ratio of all mixtures is 9/2.
Thing also comprises in contrast:
-pure TaN-003
-pure 50K-9010
The condition and the result of testing sequence represent in Table VI-VII.
Table VI: the preparation of sheet, formation and test condition general view
Condition Value (s)
Tablet quality (g) 0.14
Pressed density (g/cc) 5.0
Sintering temperature (℃) 1350，1450，1550
Sintering time (minute) 20
Formation temperature (℃) 80
Form voltage (V) 50，120
Form electric current (mA/g) 100
Hold-time (hour) 2 hours
Form ionogen 0.1V/V％H 3PO 4
DCL trial voltage (%V f) 70
Bias voltage (v) 0-20V
The DLC dipping time (minute) 5
Table VII: electric capacity (mFV/g)
Sintering temperature ??50K- ??9010 ?TaN-003 ?Ta+Si ?TaN+Si ?TaN+Si 3N 4 ?Ta+Si 3N 4
?1350 ?40,959 ?31,220 ?31,666 ?33,985 ?31,194 ?30,643
?1450 ?29,260 ?30,643 ?23,581 ?30,608 ?29,946 ?25,594
?1550 ?14,910 ?26,714 ?17,588 ?26,828 ?25,253 ?19,915
?1450-100Vf ?18,564 ?- ?21,336 ?18,398 ?18,060 ?14,318
Table VIII: leak (nA/mFV)
Sintering temperature 50K-9010 ?50Vf ?TaN-003 ?Ta+Si ?TaN+Si ?TaN+Si 3N
?1350 ?0.272 ?0.881 ?0.565 ?1.006 ?41.900
?1450 ?0.064 ?1.079 ?0.458 ?0.434 ?6.726
?1550 ?0.062 ?0.954 ?0.058 ?0.164 ?0.157
?1450-100Vf ?0.701 ?- ?0.880 ?1.332 ?11.413
The result is illustrated in Fig. 3-8.
Fig. 3-4 shows that TaN and TaN-Si have minimum capacitance loss under various sintering temperatures, and still, for TaN-Si, leaking under the sintering temperature that increases increases (reduction).Also demonstrate the advantageous feature balance of Ta-Si.
Fig. 5-6 shows (for 1450 ℃ and 1350 ℃ of agglomerating test products), and under 0 to 20 volt different bias voltages, the electric capacity of Ta reduces at most under the bias voltage that increases, and the electric capacity of Ta-Si reduces greatly and reduces, for Ta-Si 3N 4Then still less, TaN-Si is minimum.
The aperture test-results of Fig. 7-8 shows that the volume of increase helps Ta-Si with respect to Ta (Fig. 7) and TaN-Si (Fig. 8) with respect to the aperture.This can cause series resistance to reduce, and improves the performance under high frequency uses.
A kind of needs of whole presentation of results.
Embodiment 3
Niobium silicon (Nb-Si) system is tested to Ta as above-mentioned.They show differently with the Ta-Si system.Aspect thermostability and bias-dependent, do not improve, but still observe some differences.Electric capacity is whole when the Si that adds about 1% improves.Leak also and reduce.The percentage that electric capacity increases increases along with the raising of sintering temperature, and L/C reduces, and keeps stable usually.
Table I X
Sintering temperature % electric capacity increases % reduces L/C
?1100℃ ?1％ 41％
?1200℃ ?4％ 36％
?1300℃ ?25％ 33％
The porosity of Nb improves, and as seeing among the Ta, still, the sample of use has extraordinary initial porosity, so do not observe obvious reduction in ESR.To agglomerating Ta-Si mixture sheet X-ray analysis, the result shows that reality has formed alloy, and is not mixture.
Discuss
The present invention is unique and unexpectedly caused the considerable change of TS-Si (and/or TaN-Si) powder matrix sintering feature with respect to Ta (or TaN), this variation can be fixed against the sintering temperature of better quality, forming favourable high capacitance, low leakage capacitor, the various stability that improved that this electrical condenser has bias voltage, ESR frequency, a thermal treatment aspect.
Embodiment 4
As following part (a) with (b), use silane that silicon is added tantalum, the tantalum of the silicon doping that obtains is tested, the results are shown in (c).
(a) APST
With APST is that the aminopropyl silantriol is C 3H 11NO 3The moistening tantalum powder of the aqueous solution of Si is as the means that add silicon and nitrogen dopant in powder.Doping is carried out with the degree of the silicon of generation 500ppm.Employed tantalum is the powder (50K) of general 50000CV/g grade.The doping of this degree should produce the nitrogen of extra 249ppm in theory in powder, this is required result.APST is water miscible, and therefore can adopt technology well known by persons skilled in the art to add with conventional phosphorus additive.In this embodiment, in fact this powder is mixed up with the phosphorus that 100ppm is dissolved in the same solution simultaneously.After the adding of mixing, with this powder for drying, 1320 ℃ of following thermal treatments of vacuum (sintering) are 30 minutes then.
(b) THSMP
With THSMP is that 3-three hydrogen silyl methyl-phosphorous acid sodium are PC 4H 12NaO 6The moistening tantalum powder of the aqueous solution of Si, as the means that add silicon and phosphorus dopant, adulterated degree is for producing the silicon of about 500ppm.Equally, the powder of the common 50000CV/g grade of employed tantalum powder.The amount expection of doping agent provides the phosphorus additional content of 550ppm, and for this class powder, this is higher relatively phosphorus content.Therefore, do not add phosphorus in addition.As APST, THSMP is water miscible, also can use the ordinary method that is used to add phosphorus well known by persons skilled in the art to add.After adding and the drying, under the condition identical, this powder is heat-treated with the APST sample.
(c) Test-results
To (a) and doping powder test surfaces (b) long-pending (SA, cm 2/ g), Scott volume density (SBD, cc/g), Fei Xiershi average particulate diameter (FAPD, micron), flow (g/s), in the similar content of carbon (C) content and nitrogen (N), oxygen (O), phosphorus (P) and the silicon (Si) of ppm, under the results are shown in of the powder that APST and THSMP handled in the Table X, wherein with basic 50K tantalum powder as the contrast of having carried out similar test.The acquisition amount (pick-up) of silicon and nitrogen is (near calculated value) very accurately, and phosphorus is more accurate, still, all excessive in all cases providing, this is also by the high surfaces product representation of 50K+THSMP sample with respect to other samples.By basic dissipation in the thermal sintering process of sodium after handling of THSMP adding.
Table X
Powder ??SA ??SBD ??FAPD Flow ??C ????N ?O ??P ?Si
????50K ?9172 ?27.2 ??2.64 ?0.384 ??32 ????60 ?10330 ?92 ?71
?50K+APST ?10097 ?27.3 ??2.76 ?0.396 ?365 ???256 ?11010 ?78 405
?50K+THSMP ?11423 ?24.3 ??1.7 ?0.211 ?652 ????65 ?11880 317 500
To identical sintered powder, in Malvern Mastersizer particle size determination instrument, utilize the particulate determination of laser light scattering that is suspended in the water-bath to test, the results are shown among the following table IX.Listed result is for the 50K contrast, handle and respectively do for oneself with the powder that THSMP handles with APST in the table: at the sintered particles particle diameter up to 10,50,90 weight % part, in the intermediate value (MV) of micron, with m 2The reckoner area (CS) of/g meter and 11 microns and under particulate (fine particle) weight %.Can see and under APST and two kinds of situations of THSMP, mixing all as effective sintering inhibitor.
Table X I
Powder ?10％ ?50％ ??90％ ??MV ?CS 11 microns
50K ?13.4 ?53.7 ?149.26 ?69.923 ?0.211 ?7.51
50K+ APST ?16.9 ?77.89 ?214.94 ?103.4 ?0.17 ?5.62
50K+ THSMP ?8.68 ?58.52 ?177.28 ?78.051 ?0.297 ?12.73
Although there is sodium in THSMP after vacuum heat treatment, the Na and the contrast that exist in sample 50K+THSMP are suitable.Be also noted that, even add silicon with compound form, but its be used for the agglomerating heat treatment process also be transformed into element form and with the main body tantalum alloyization.
Should be appreciated that if the alloy (comprising mutual alloy) of niobium, tantalum or niobium and a kind of compound (comprising nitride and inferior nitride) of or two kinds of these metals are carried out similar silicon doping, then should expect has similar effect.Further can use silicon-containing compound and solution (as water glass), with provide above-mentioned silicon doping a bit, and also provide other doping agents-if necessary as the minor advantage of nitrogen and/or phosphorus doping.
Can carry out the deoxidation treatment of self to sintered particles (the perhaps anode DB of Sheng Chenging), for example be exposed to basic metal or alkaline-earth metal or aluminium, in the steam of preferably magnesium or calcium, simultaneously with this powder at 600-1200 ℃, preferably in heating more than 800 ℃, as W.W.Albrecht etc. instructing in US4483819 (mandate on July 19 nineteen eighty-two) and 4537641 (mandates on August 27th, 1985).Deoxidation heating also provide a kind of accelerate silicon compound be transformed into elemental silicon and with the main body refractory metal alloyization by way of.In thermal sintering (reactive sintering) process, can utilize deoxygenation.Usually, after desoxydatoin, adopt mineral acid to remove the processing of the residuum (as magnesium oxide) of reduction reaction.Other impurity of main body refractory metal can by deoxidization technique remove and since this process heat sintering temperature reduction itself also be known.For each situation of mixing up (silicon separately or with other additive) with silicon, can the chemistry and the hot blocking factor of doping, sintering, deoxidation and final sintering step be optimized, to improve the physical properties and the electrical properties of the electrical condenser that adopts the porous anode DB preparation of making by this sintered powder.
For a person skilled in the art, obviously other embodiments, improvement, details and purposes can be consistent with above-mentioned disclosed literal and spirit and within the application's scope, it is subjected to the restriction of claims, explains according to patent law, comprises the theory on the same meaning.

Claims (5)

1. the powder matrix alloy of metal contains in tantalum and niobium or its nitride one or both, they be mixed be blended in wherein and with the silicon components of its alloying.
2. the porous anode body that is sintered into of the matrix of claim 1, Ta, Nb, the NbN independent with agglomerating compare, and it has the porosity of the raising of the higher pore diameter of homogeneous basically.
3. the anode bodies of claim 2 constitutes with the form of the dielectric oxide that generates alloy on hole wall.
4. the electrolytic condenser of assembling fully wherein is equipped with the anode of claim 3.
5. each product in the claim 1 to 4, have exist or do not exist being approximately of nitrogen (Ta, Nb) 9Si 2Part by weight.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327035C (en) * 2001-02-12 2007-07-18 H.C.施塔克公司 Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7811355B2 (en) 2003-11-10 2010-10-12 Showa Denko K.K. Niobium powder for capacitor, niobium sintered body and capacitor
CN1913523A (en) * 2005-08-09 2007-02-14 华为技术有限公司 Method for implementing layer level virtual private exchange service
GB2450669B (en) * 2006-05-05 2012-03-21 Cabot Corp Tantalam powder and methods of manufacturing same
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1165510A (en) * 1968-12-13 1969-10-01 Standard Telephones Cables Ltd Solid Electrolytic Capacitors
US4432035A (en) * 1982-06-11 1984-02-14 International Business Machines Corp. Method of making high dielectric constant insulators and capacitors using same
US4859257A (en) * 1986-01-29 1989-08-22 Fansteel Inc. Fine grained embrittlement resistant tantalum wire
CN1010447B (en) * 1987-06-17 1990-11-14 北京有色金属研究总院 Production method of solid electrolytic capacitors
US4957541A (en) * 1988-11-01 1990-09-18 Nrc, Inc. Capacitor grade tantalum powder
JP2895166B2 (en) * 1990-05-31 1999-05-24 キヤノン株式会社 Method for manufacturing semiconductor device
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
KR100240649B1 (en) * 1996-11-07 2000-02-01 정선종 Method for forming diffusion prevention film
US6576069B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Tantalum-silicon alloys and products containing the same and processes of making the same
JP3667531B2 (en) * 1998-07-07 2005-07-06 松下電器産業株式会社 Electrolytic capacitor manufacturing method
IL157273A0 (en) * 2001-02-12 2004-02-19 Starck H C Inc Tantalum-silicon and niobium-silicon substrates for capacitor anodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CA2438246A1 (en) 2002-08-22
EP1370716A4 (en) 2007-08-08
AU2002243956B2 (en) 2007-08-02
BR0207200A (en) 2004-01-27
JP2004518818A (en) 2004-06-24
IL157273A0 (en) 2004-02-19
MXPA03007171A (en) 2005-02-14
RU2003127948A (en) 2005-03-27

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