CN1489150A - Magnetic-resistance storage unit structure and magnetic-resistance random access memory circuit - Google Patents
Magnetic-resistance storage unit structure and magnetic-resistance random access memory circuit Download PDFInfo
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- CN1489150A CN1489150A CNA021443718A CN02144371A CN1489150A CN 1489150 A CN1489150 A CN 1489150A CN A021443718 A CNA021443718 A CN A021443718A CN 02144371 A CN02144371 A CN 02144371A CN 1489150 A CN1489150 A CN 1489150A
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Abstract
The circuit comprises following parts. Reluctance type storage cell possesses a fixed magnetic axis layer, a free magnetic axis layer and a first insulation layer between the fixed magnetic axis layer and the free magnetic axis layer. The free magnetic axis layer possesses maximum cross section and easy axis whose direction is roughly perpendicular to that of maximum cross section. Bit line is coupled to the free magnetic axis layer, and data line is coupled to the fixed magnetic axis layer, which possessing first end point and second end point. Switching device with control gate is coupled between the first end point and second end point. Word line is controlled to control gate is utilized to provide signal to turn on the switching device. Programming line coupled to second end point provides programming current. When the switching device is on, magnetic field generated when programming current passing through data line changes direction of magnetic axis in free magnetic axis layer in order to change conducting state of reluctance type storage cell.
Description
Technical field
The present invention relates to a kind of magnetic random access memory, particularly about the programmed circuit of a kind of reluctance type memory cell structure and magnetic random access memory.
Background technology
Magnetic random access memory (Magnetic Random Access Memory, be designated hereinafter simply as MRAM) be a kind of metallicl magnetic material, its radiation resistance is more high than semiconductor material, belong to non-volatility memorizer (Non-volatile Random Access Memory), different with dynamic RAM (DRAM) or static RAM (SRAM) material, in the time of computer outage, shutdown, still can keep storage property.
MRAM belongs to non-volatility memorizer, so magnetoresistance characteristics store recording information has low power consuming, non-volatile, permanent character.Its its working principles is the same with storage data on hard disk, and data are foundation with the direction of magnetic, are stored as 0 or 1, and stored data have permanent, after by extraneous influence of magnetic field, just can change this magnetic data.
Figure 1A and Figure 1B have shown the structural representation of mram cell: electric current can vertically flow through (or passing) another electromagnetic layer 106 by an electromagnetic layer 102 by insulation course (tunnel junction) 104.The magnetic axis direction of free magnetic axis layer (free layer) 102 is to be subjected to the outside to apply the influence in magnetic field and change, and fixedly the magnetic axis direction of magnetic axis layer (pinned layer) 106 is fixed, and free pole magnetic axis direction is respectively shown in the label 108A and 108B of Figure 1A and Figure 1B.As free magnetic axis layer 102 when fixedly the magnetic axis direction of magnetic axis layer 106 is same direction (shown in Figure 1A), mram cell presents low-resistance characteristic, and when free magnetic axis layer 102 when fixedly magnetic axis layer 106 is different directions, then mram cell just has and has high-resistance characteristic.
Fig. 2 is the graph of a relation of external magnetic field and mram cell switching condition.Longitudinal magnetic field H
lThe rough magnetic axis direction of direction with free magnetic axis layer 102 parallel, and transverse magnetic field H
tThe rough magnetic axis direction quadrature with free magnetic axis layer 102 of direction.There is not transverse magnetic field H
tSituation under, and longitudinal magnetic field H
lBe H
0The time, will cause the magnetic axis direction of free magnetic axis layer 102 to be switched.If transverse magnetic field H is arranged
tExistence, the critical value that the magnetic axis direction of free magnetic axis layer 102 is switched will be reduced, therefore, apply than H
0Little longitudinal magnetic field H
lCan make mram cell switch its conducting state.
As mentioned above, the magnetic axis direction of free magnetic axis layer 102 has determined the conducting state (high resistance and low resistance) of mram cell.In the formed regional A of dotted line, mram cell is first conducting state (is example with the high impedance), and the part beyond regional A, mram cell will be subjected to the influence in magnetic field and switch to another conducting state (is example with the Low ESR).
Fig. 3 is the magnetic direction synoptic diagram that shows free magnetic axis layer 102.In the time the magnetic axis vector M of free magnetic axis layer 102 will being switched to other direction, being subjected to following factor influences.If externally-applied magnetic field H
ExtWhen surpassing a critical magnetic field, will cause the magnetic axis vector M deflection of free magnetic axis layer 102.At first analysis of magnetic axial vector M is in the component of directions X and Y direction.
The magnetic axis vector M in the component of directions X is:
H
DX＝M
Xt/L＝Mt/Lcosθ
The magnetic axis vector M in the component of Y direction is:
H
DY＝M
Yt/L＝Mt/Wcosθ
Wherein t is the thickness of free magnetic axis layer 102, and L is the length that free magnetic axis layer 102 changes long limit, and W is the length of free magnetic axis layer 102 than minor face, and θ is the angle of magnetic axis vector M and free magnetic axis layer 102 longer sides.
The factor that determines above-mentioned critical magnetic field size is except the required magnetic field of the magnetic axis vector M of deflection free magnetic axis layer 102, comprise that also induced field that magnetic axis M induced in free magnetic axis layer 102 two ends is (with "+", "-" symbolic representation), above-mentioned induced field is the two ends that betide free magnetic axis layer 102, it suppresses magnetic axis M deflection, and meaning promptly makes the magnetic axis vector M produce opposing and is subjected to externally-applied magnetic field H
ExtThe strength of deflection.Is Mt/W from magnetic axis layer 102 in the longitudinal axis (X) induction field that direction produced, and is Mt/L in transverse axis (Y) induction field that direction produced.
In addition, the size of critical magnetic field also is subjected to being influenced by easy axle (easy axis) direction of magnetic axis layer 102 own materials, and easily axial vector is H
K, it forms reason is to be subjected to the magnetic field induction of external environment and to produce in semiconductor fabrication.At the identical externally-applied magnetic field H of supply
ExtSituation under, when the direction of easy axle was the Y direction, this moment, the angle of magnetic axis vector M and free magnetic axis layer 102 longer sides was θ
α, and when easily the direction of axle was directions X, this moment, the angle of magnetic axis vector M and free magnetic axis layer 102 longer sides was θ
β
tgθ
α＝(H
ext+H
K+Mt/L)/(Mt/W)
tgθ
β＝(H
ext+Mt/L)/(Mt/w+H
K)
As from the foregoing, at identical externally-applied magnetic field H
ExtSituation under, tg θ
α＞tg θ
βAs seen as easy axial vector H
KDuring than the direction of minor face, the magnetic axis vector M is easier to deflection for parallel free magnetic axis layer 102.Also promptly, can be changed direction by less externally-applied magnetic field.
When mram cell was write data, the spin flip conversion magnetic field of each mram cell was produced by foreign current, then had only the magnetic axis of selecteed mram cell to reverse through moving thus, and the action of smooth record.More little as if the external magnetic field that spin flip conversion is required, then can reduce the magnitude of current, reach the effect of saving electric power then.Yet because the cause of Free Electromagnetic layer (free layer) internal magnetic field, its easy axis direction normally is parallel to long limit and increases the difficulty of switching the magnetic axis direction.
Summary of the invention
In order to address the above problem, fundamental purpose of the present invention is to provide a kind of reluctance type memory cell structure and magnetic random access memory circuit, the easy axis direction of the Free Electromagnetic layer of reluctance type storage unit (free layer) is to extend along the direction in narrower cross section, if the Free Electromagnetic layer is a rectangle, then the easy axis direction of Free Electromagnetic layer is with parallel than minor face; Can reduce and switch the required externally-applied magnetic field of the whole magnetic axis direction of Free Electromagnetic layer, and reduce program current required when programming.
To achieve these goals, a kind of reluctance type memory cell structure that the present invention proposes comprises first electromagnetic layer, second electromagnetic layer and insulation course.First electromagnetic layer has first electromagnetic axis of fixed-direction, second electromagnetic layer has second electromagnetic axis, maximum cross-section and the easy axle that can change direction, and easy axis direction is vertical with the direction of maximum cross-section substantially, and insulation course is arranged between first electromagnetic layer and second electromagnetic layer.
The invention allows for a kind of magnetic random access memory circuit, comprise following element: reluctance type storage unit and fixedly magnetic axis layer, a free magnetic axis layer arranged, and be arranged at first insulation course between fixing magnetic axis layer and the free magnetic axis layer, free magnetic axis layer has maximum cross-section and easy axle, and easy axis direction is vertical with the direction of above-mentioned maximum cross-section substantially; The bit line is coupled to free magnetic axis layer; Data electrode is coupled to fixedly magnetic axis layer; Line program is in order to provide program current; Second insulation course is arranged between data electrode and the line program, and the magnetic field that electric current produced of the program current and the bit line of flowing through changes the magnetic axis direction of free magnetic axis layer, makes the conducting state of reluctance type storage unit change.
Simultaneously, the present invention proposes a kind of magnetic random access memory circuit, comprise following element, the reluctance type storage unit has fixedly magnetic axis layer, a free magnetic axis layer, and be arranged at first insulation course between fixing magnetic axis layer and the free magnetic axis layer, free magnetic axis layer has maximum cross-section and easy axle, and easy axis direction is vertical with the direction of above-mentioned maximum cross-section substantially; The bit line is to couple free magnetic axis layer, and data line is to be coupled to fixedly magnetic axis layer, has one first end points and one second end points; Switchgear is coupled between first end points and the earth point, and has control sluice, and the character line is coupled to control sluice, in order to provide signal with the actuating switch device; Line program is coupled to second end points, and in order to program current to be provided, when the switchgear conducting, the magnetic field that program current is produced when flowing through data line changes the magnetic axis direction of free magnetic axis layer to change the conducting state of reluctance type storage unit.
The invention has the beneficial effects as follows, reluctance type storage unit of the present invention, its Free Electromagnetic layer easy axis direction is substantially perpendicular to its maximum cross section, therefore can reduce and switch the required externally-applied magnetic field of the whole magnetic axis direction of Free Electromagnetic layer, and required program current when reducing programming.
The invention will be further described below in conjunction with the drawings and specific embodiments.
Description of drawings
Figure 1A and Figure 1B are the detailed structure view that shows the reluctance type storage unit;
Fig. 2 is the graph of a relation that shows external magnetic field and reluctance type storage unit switching condition;
Fig. 3 is the magnetic direction synoptic diagram that shows free magnetic axis layer 102;
Fig. 4 is the schematic top view of shows wafer and element thereof:
Fig. 5 is the Organization Chart that shows according to the described magnetic random access memory circuit of first embodiment of the invention;
Fig. 6 is the Organization Chart that shows according to the described magnetic random access memory of second embodiment of the invention (MRAM) circuit.
Embodiment
According to the described magnetic-resistance random access memory storage of the embodiment of the invention, the easy axle of its free magnetic axis layer is the direction setting along narrower xsect, required externally-applied magnetic field when switching the magnetic axis direction so as to reducing.
Fig. 4 is the schematic top view of shows wafer and element thereof.Instrument with bearing wafer is example (a for example sputtering equipment), and its inside has magnetic field, therefore can produce induced field on wafer 40, induced field H in manufacture process
IDirection is with as shown in the figure.When the configuration of free magnetic axis layer is shown in label 43A, then easy axis direction will be in substantially parallel relationship to the cross section of its broad; When the configuration of free magnetic axis layer is shown in label 43B, then easy axis direction will be parallel to its narrower cross section.What this indicated especially be, the shape of free magnetic axis layer can be rectangle or ellipse diagram shape etc., however necessarily have substantially the longest cross section and with the cross section of its quadrature, this is due to the characteristic of magnetic element.
First embodiment
Fig. 5 has shown the Organization Chart according to the described magnetic random access memory circuit of first embodiment of the invention.
The top of magnetic-resistance random access storage unit (mram cell) 50A and 50B is coupled to bit line B
n, and its bottom is coupled to electrode 52.The grid of transistor 54 is coupled to character line (W
m, W
M+1), source electrode is a ground connection, and its drain electrode is respectively coupled to corresponding electrode 52.In order to have an insulation course 53 between the line program (56A, 56B) that writes data and the electrode 52, in order to isolate line program 56A, 56B and electrode 52.
The structure of mram cell is shown in Figure 1A and Figure 1B.Electric current can vertically see through insulation course (tunnel junction) 104 by an electromagnetic layer 102 and flow through (or passing) another electromagnetic layer 106.The magnetic axis direction of free magnetic axis layer (free layer) 102 is subjected to the outside and applies the influence in magnetic field and change, and fixedly the magnetic axis direction of magnetic axis layer (pinned layer) 106 is fixed, and its magnetic axis direction is respectively shown in the label 108A and 108B of Figure 1A and Figure 1B.As free magnetic axis layer 102 when fixedly the magnetic axis direction of magnetic axis layer 106 is same direction (shown in Figure 1A), mram cell presents low-resistance situation, and when free magnetic axis layer 102 when fixedly magnetic axis layer 106 is different directions, then mram cell just has and has high-resistance special part.
According to the described magnetic random access memory of first embodiment of the invention unit, the easy axis direction of the free magnetic axis layer that it is inner is substantially perpendicular to its maximum cross section, so the direction of magnetic axis vector M is easier to change.
In write step, to choose mram cell 50A is example, the magnetic field that program current produced that line program 56A provided in the magnetic field that electric current produced of the bit line Bn that flows through, can change the conducting state of mram cell 50A when mram cell 50A is chosen in combination again.
When reading the MRAM data, be example with mram cell 50A, this moment character line W
mTurn-on transistor 54, and according to the influence to impedance of the conducting state of mram cell 50A, by detecting bit line B
nMagnitude of voltage promptly can read the stored data of mram cell 50A.
Second embodiment
Fig. 6 has shown the Organization Chart according to the described magnetic random access memory of second embodiment of the invention (MRAM) circuit.The inner structure of reluctance type storage unit 60A and 60B (or claiming the magnetic passage to connect the face unit) is shown in Figure 1A, have fixedly magnetic axis layer 106, free magnetic axis layer 102, and be arranged at insulation course (magnetictunneling junction) 104 between fixing magnetic axis layer 106 and the free magnetic axis layer 102, and the magnetic resistance of reluctance type storage unit 60A and 60B (magneto-resistance) is determined by the fixing magnetic axis direction of magnetic axis layer 106 and free magnetic axis layer 102.When free magnetic axis layer 102 when fixedly the magnetic axis direction of magnetic axis layer 106 is same direction, mram cell has low-resistance situation, and when free magnetic axis layer 102 and when fixedly magnetic axis layer 106 is different directions, then mram cell just has and has high-resistance speciality.
The free magnetic axis layer 102 of mram cell 60A and 60B is electrically connected at the bit line Bn with a set direction configuration, and the fixedly magnetic axis layer 106 of mram cell 60A and 60B is to be electrically connected at data line 62A and 62B respectively.
Identical with first embodiment, according to the described magnetic random access memory of second embodiment of the invention unit, the easy axis direction of the free magnetic axis layer that it is inner is substantially perpendicular to its maximum cross section, so the direction of magnetic axis vector M is easier to change.
Moreover data line 62A, 62B can be the part of mram cell, and for example with fixedly magnetic axis layer 106 is one-body molded, or are positioned at fixedly under magnetic axis layer, anti-strong magnetosphere or other metal materials.The size of data line 62A, 62B can't be too big with respect to the wideest part of reluctance type storage unit.When electric current is flowed through data line 62A, 62B, can produce magnetic field.Because free magnetic axis layer 102 only is several dusts (angstrom) (scope is about the 8-15 dust) with the distance of data line 62, therefore can receive very big magnetic field.So, with respect to first embodiment, under the described framework of second embodiment of the invention, only need a spot of program current Iw can change the magnetic axis direction of free magnetic axis layer 102, the adjustment that will go up easy axis direction again more reduces the size of program current Iw; Therefore reach the effect of power saving.
In addition, the distance of data line 62A and mram cell 60A is less than the distance of itself and mram cell 60B, because square being inversely proportional to of magnetic field size and distance, therefore data line 62A much larger than the influence to mram cell 60B, therefore can avoid taking place the situation of misprogrammed to the influence of mram cell 60A.
Character line (the W that the grid of switchgear transistor 64A and 64B (control sluice) couples respectively and vertical above-mentioned set direction disposes
m, W
M+1), source ground.Because the electrical connection of transistor 64A and 64B is identical, therefore the annexation of transistor 64A only is discussed.The drain electrode of transistor 64A is coupled to the end 620 of data line 62A.Line program PL is coupled to the other end 622 of data line 62A, in order to program current I to be provided
W
When will be when mram cell 60A writes data, this moment, the peripheral circuit of storage array be chosen line program PL and character line W
m, so transistor 64A conducting, the program current I that line program PL provided
WThe data line 62A that flows through, and flow to earth point via the transistor 64A of conducting.At this moment, program current I
WThe magnetic field that is produced when flowing through data line 62A changes the magnetic axis direction of free magnetic axis layer 102, makes the conducting state of mram cell 60A change into low impedance state by high impedance status, or changes into high impedance status by low impedance state.At this, because under the described framework of second embodiment of the invention, program current I
WThe magnetic field that is produced has been enough to change the conducting state of mram cell 60A, so bit line Bn this moment and the electric current that produces magnetic field need not be provided as first embodiment, so bit line Bn is a floating.
When reading the MRAM data, be example with mram cell 60A, this moment character line W
mTurn-on transistor 64A, and according to the influence to impedance of the conducting state of mram cell 60A, by detecting bit line B
nMagnitude of voltage promptly can read the stored data of mram cell 60A.
According to the described magnetic random access memory circuit of the embodiment of the invention, consult Fig. 3, if magnetic easy axis field H
KBe 50e, and externally-applied magnetic field Hext be 1 (μ m)/0.5 (μ m) at the Aspect Ratio L/W of free magnetic axis layer 102, and the value M of magnetic axis vector and thickness t product is under the situation of 1.0e-4emu/cm, as magnetic easy axis field H when being 100e
KDirection when being the y direction (direction along narrower section is extended), at this moment, the angle theta of magnetic axis vector M and free magnetic axis layer 102 longer sides is 85 °; As magnetic easy axis field H
KDirection when being the x direction (direction along the broad cross section is extended), at this moment, the angle theta of magnetic axis vector M and free magnetic axis layer 102 longer sides is 57 °, the obvious magnetic easy axis field H that works as
KDirection when the direction in broad cross section is provided with, the direction of magnetic axis vector M is easier to be changed.
In sum, according to the described reluctance type storage unit of the embodiment of the invention, its Free Electromagnetic layer easy axis direction is substantially perpendicular to its maximum cross section, therefore can reduce and switch the required externally-applied magnetic field of the whole magnetic axis direction of Free Electromagnetic layer, and required program current when reducing programming.
Though the present invention discloses as above with preferred embodiment, but be not in order to limiting scope of the present invention, those skilled in the art, without departing from the spirit and scope of the present invention, the equivalent structure transformation of making all is included in the claim of the present invention.
Claims (10)
1. a reluctance type memory cell structure is characterized in that, comprising:
One first electromagnetic layer has first electromagnetic axis of fixed-direction;
One second electromagnetic layer has second electromagnetic axis, a maximum cross-section and an easy axle that can change direction, and wherein above-mentioned easy axis direction is vertical with the direction of above-mentioned maximum cross-section substantially; And
One insulation course is arranged between above-mentioned first electromagnetic layer and second electromagnetic layer.
2. a magnetic random access memory circuit is characterized in that, comprising:
One reluctance type storage unit, have fixedly magnetic axis layer, a free magnetic axis layer and be arranged at first insulation course between said fixing magnetic axis layer and the free magnetic axis layer, wherein above-mentioned free magnetic axis layer has easily axle of a maximum cross-section and, and above-mentioned easy axis direction is vertical with the direction of above-mentioned maximum cross-section substantially;
One bit line is with a set direction configuration, in order to couple above-mentioned free magnetic axis layer;
One data electrode is coupled to the said fixing magnetic axis layer;
One line program is in order to provide a program current; And
One second insulation course, be arranged between above-mentioned data electrode and the line program, wherein, the magnetic field that electric current produced of the above-mentioned program current and the above-mentioned bit line of flowing through changes the magnetic axis direction of above-mentioned free magnetic axis layer, makes the conducting state of above-mentioned reluctance type storage unit change.
3. magnetic random access memory circuit as claimed in claim 2 is characterized in that, described above-mentioned reluctance type storage unit is a rectangle.
4. magnetic random access memory circuit as claimed in claim 3 is characterized in that, described above-mentioned easy axis direction be in substantially parallel relationship to above-mentioned rectangle than minor face.
5. a magnetic random access memory circuit is characterized in that, comprising:
One reluctance type storage unit, have fixedly magnetic axis layer, a free magnetic axis layer, and be arranged at insulation course between said fixing magnetic axis layer and the free magnetic axis layer, wherein above-mentioned free magnetic axis layer has easily axle of a maximum cross-section and, and above-mentioned easy axis direction is vertical with the direction of above-mentioned maximum cross-section substantially;
One bit line is with a set direction configuration, in order to couple above-mentioned free magnetic axis layer;
One data line is coupled to the said fixing magnetic axis layer, has one first end points and one second end points;
One switchgear is coupled between above-mentioned first end points and the earth point, and has a control sluice;
One character line is with vertical above-mentioned set direction configuration; And be coupled to above-mentioned control sluice, in order to being provided, puts a signal with the above-mentioned switch of conducting; And
One line program, be coupled to above-mentioned second end points, in order to program current to be provided, when above-mentioned switchgear conducting, the above-mentioned program current above-mentioned data line of flowing through, and flow to earth point via above-mentioned switchgear, and the magnetic field that above-mentioned program current is produced when flowing through above-mentioned data line changes the magnetic axis direction of above-mentioned free magnetic axis layer, makes the conducting state of above-mentioned reluctance type storage unit change.
6. magnetic random access memory circuit as claimed in claim 5 is characterized in that, described above-mentioned reluctance type storage unit is a rectangle.
7. magnetic random access memory circuit as claimed in claim 6 is characterized in that, described easy axis direction be in substantially parallel relationship to above-mentioned rectangle than minor face.
8. magnetic random access memory circuit as claimed in claim 5 is characterized in that, the described first bit line is a suspension joint when above-mentioned program current is flowed through above-mentioned data line.
9. magnetic random access memory circuit as claimed in claim 5 is characterized in that, described fixedly magnetic axis layer and above-mentioned data line are one-body molded.
10. magnetic random access memory circuit as claimed in claim 5 is characterized in that, the distance of described data line and free magnetic axis layer is between 8 dust to 15 dusts.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021443718A CN100481251C (en) | 2002-10-10 | 2002-10-10 | Magnetic-resistance storage unit structure and magnetic-resistance random access memory circuit |
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|---|---|---|---|
| CNB021443718A CN100481251C (en) | 2002-10-10 | 2002-10-10 | Magnetic-resistance storage unit structure and magnetic-resistance random access memory circuit |
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| Publication Number | Publication Date |
|---|---|
| CN1489150A true CN1489150A (en) | 2004-04-14 |
| CN100481251C CN100481251C (en) | 2009-04-22 |
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101329897B (en) * | 2007-06-18 | 2010-12-08 | 台湾积体电路制造股份有限公司 | Method of programming a magnetic memory element |
| CN101383185B (en) * | 2007-09-05 | 2011-10-26 | 财团法人工业技术研究院 | Magnetic random access memory |
| CN116646146A (en) * | 2023-06-21 | 2023-08-25 | 上海韬润半导体有限公司 | Closed magnetic chip inductance structure, preparation method thereof and switching power supply |
-
2002
- 2002-10-10 CN CNB021443718A patent/CN100481251C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101329897B (en) * | 2007-06-18 | 2010-12-08 | 台湾积体电路制造股份有限公司 | Method of programming a magnetic memory element |
| CN101383185B (en) * | 2007-09-05 | 2011-10-26 | 财团法人工业技术研究院 | Magnetic random access memory |
| CN116646146A (en) * | 2023-06-21 | 2023-08-25 | 上海韬润半导体有限公司 | Closed magnetic chip inductance structure, preparation method thereof and switching power supply |
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| Publication number | Publication date |
|---|---|
| CN100481251C (en) | 2009-04-22 |
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