CN1485599A - Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof - Google Patents
Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof Download PDFInfo
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- CN1485599A CN1485599A CNA021433607A CN02143360A CN1485599A CN 1485599 A CN1485599 A CN 1485599A CN A021433607 A CNA021433607 A CN A021433607A CN 02143360 A CN02143360 A CN 02143360A CN 1485599 A CN1485599 A CN 1485599A
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Abstract
The invention discloses a beam- film integrated arrangement resonance beam pressure transducer chip and manufacturing method thereof, characterized by that, a resonant beam is made on the face side of a single silicon chip, and a pressure responsive film is made on the opposite side, wherein the resonant beam is supported by two peninsula type arrangements and accomplished by porous silicon sacrificing layer process, and low stress thick silicon nitride is selected as the making material. The invention not only simplifies the making process of the micro resonant type pressure transducer, but also increases the pressure sensitivity.
Description
Technical field
The present invention relates to the manufacture method of the resonance type pressure sensor chip of the manufacture method of Microstructure Sensor, particularly a kind of beam-film integrated arrangement.
Background technology
Some excellent characteristic such as the micromachine resonant pressure transducer is little because of its precision height, good stability, volume, easy batch process, being described as the pressure transducer of a new generation, is that another the typical case of microelectron-mechanical (MEMS) technology after piezoresistive pressure sensor uses.In order to isolate testing medium and to have increased pressure sensitivity, micro resonance type pressure sensor does not directly reflect the variation of pressure usually, promptly add testing pressure and do not directly act on resonator, but change the rigidity of resonator indirectly by pressure membrane, thereby the change resonance frequency belongs to the responsive principle of secondary.Its manufacture method has two big classes, and a class is the split of beam film, needs two silicon chips, is combined into one by technologies such as attenuate bondings again, and shortcoming relates to bonding, and complex process, yield rate are not high; Another kind of application shows micro mechanical technology, on single silicon chip, finish the making of beam film, sacrificial layer technology commonly used discharges resonance beam, sacrifice layer can be silicon dioxide, polysilicon, porous silicon etc., wherein porous silicon is relatively easy because of making, removing, and thickness can reach the hundreds of micron, and is subjected to paying close attention to widely.Have contradiction in the selection of sacrificial layer thickness, if sacrifice layer is too thin, laterally undercutting discharges just difficulty relatively of resonance beam, also has adhesion phenomenon, is exactly that beam and following substrate layer stick together, and influences vibration of beam.And if sacrifice layer is too thick, the thickness of pressure membrane just can not be very little, and greater than the thickness of sacrifice layer, this is the raising of the transducer sensitivity of restriction just at least.
Summary of the invention
The objective of the invention is to overcome the shortcoming of said method, a kind of beam-film integrated arrangement resonance type pressure sensor chip and manufacture method are provided, manage to change the structure of sensor, eliminated the influence that sacrificial layer thickness restriction sensitivity improves, both simplified technology, reduce technology difficulty, can guarantee higher pressure sensitivity again simultaneously.
The objective of the invention is to realize by the following method:
A kind of beam-film integrated arrangement resonance beam pressure sensor of the present invention chip is characterized in that, comprising:
One silicon chip is manufactured with one deck silicon nitride film on the silicon chip;
Have a groove on silicon nitride film and silicon chip, this groove is generally I-shaped like one, forms the two rectangle peninsulas, and it is resonance beam that the silicon nitride on this two rectangles peninsula is communicated with;
Be rectangular frame around the groove of opening on this silicon chip, the bottom of this groove is the rectangle pressure membrane.
Wherein said silicon chip is the low-resistivity monocrystalline silicon piece.
Wherein said silicon nitride film is the low stress thick silicon nitride of low-pressure chemical vapor deposition growth, and thickness is more than 2 microns.
The wherein said peninsula is a cuboid, and width is more than 3 times of resonance beam.
The manufacture method of a kind of beam-film integrated arrangement resonance beam pressure sensor of the present invention chip is characterized in that, may further comprise the steps:
1) on the twin polishing monocrystalline silicon piece of P type (100) crystal orientation low-resistivity, adopt low-pressure chemical vapor deposition method deposition low stress thick silicon nitride film, be used to make resonance beam;
2) use lithography stripping method sputter platinum resistance, make exciting, pick-up and temperature detecting resistance, evaporation or sputter gold are made contact conductor;
3) reactive ion etching silicon nitride is made sin beam and peninsular structure, anodic oxidation growth porous silicon, and the horizontal undercutting characteristic of utilizing porous silicon to grow makes the beneath silicon of sin beam all become porous silicon;
4) form silicon frame in silicon chip back side isotropy or anisotropic etch C type silicon cup pressure-sensitive film, to discharge sin beam, finish the manufacturing of pressure sensor chip with rare potassium hydroxide solution corrosion of porous silicon.
Wherein said silicon chip is the low-resistivity monocrystalline silicon piece.
Wherein said silicon nitride film is the low stress thick silicon nitride of low-pressure chemical vapor deposition growth, and thickness is more than 2 microns.
Wherein said exciting, pick-up resistance and temperature detecting resistance all adopt platinum film resistor.
Wherein said silicon nitride resonance beam is supported by two peninsular structures.
Wherein make positive peninsula type structure by the porous silicon anodizing technology.
Wherein the growth degree of depth of porous silicon guarantees the whole porous of monocrystalline silicon that sin beam is beneath.
The wherein said peninsula is a cuboid, and width is more than 3 times of deck-siding, and thickness is identical with the porous silicon degree of depth.
Description of drawings
Fig. 1 is the novel beam-film integrated arrangement resonance type pressure sensor of a present invention chip structure synoptic diagram;
Fig. 2 is a beam-film integrated arrangement resonance type pressure sensor chip manufacturing process process flow diagram of the present invention.
Embodiment
See also shown in Figure 1, a kind of beam-film integrated arrangement resonance beam pressure sensor of the present invention chip, comprising:
One silicon chip 11 is manufactured with one deck silicon nitride film 12 on the silicon chip 11, described silicon chip 11 is the low-resistivity monocrystalline silicon piece; Described silicon nitride film 12 is low stress thick silicon nitrides of low-pressure chemical vapor deposition LPCVD growth, and thickness is more than 2 microns.
Have a groove 17 on silicon nitride film 12 and silicon chip 11, this groove 17 is generally I-shaped like one, forms the two rectangle peninsulas 14, and it is resonance beam 13 that the silicon nitride 12 on this two rectangles peninsula 14 is communicated with; The described peninsula 14 is cuboids, and width is more than 3 times of resonance beam 13.
Be rectangular frame 16 around the groove of opening on this silicon chip 11 17, the bottom of this groove 17 is a rectangle pressure membrane 15.
See also Fig. 2, the manufacture method of a kind of beam-film integrated arrangement resonance beam pressure sensor of the present invention chip may further comprise the steps:
1) on the twin polishing monocrystalline silicon piece 21 of P type (100) crystal orientation low-resistivity, adopt low-pressure chemical vapor deposition method deposition low stress thick silicon nitride film 22, (Fig. 2 is a) to be used to make resonance beam; Described silicon chip 21 is the low-resistivity monocrystalline silicon piece; Described silicon nitride film 22 is low stress thick silicon nitrides of low-pressure chemical vapor deposition growth, and thickness is more than 2 microns;
2) use lithography stripping method sputter platinum resistance, make exciting, pick-up and temperature detecting resistance 23, evaporation or sputter gold are made contact conductor 24 (Fig. 2 b); Described exciting, pick-up resistance and temperature detecting resistance 23 all adopt platinum film resistor;
3) the reactive ion etching silicon nitride 22, make sin beam and peninsular structure, anodic oxidation growth porous silicon 25, and the horizontal undercutting characteristic of utilizing porous silicon to grow makes the beneath silicon of sin beam all become porous silicon 25 (Fig. 2 c); The growth degree of depth of porous silicon 25 guarantees the whole porous of monocrystalline silicon under the sin beam; The described peninsula is a cuboid, and width is more than 3 times of deck-siding, and thickness is identical with the porous silicon degree of depth; Described silicon nitride resonance beam is supported by two peninsular structures; This peninsular structure is to make positive peninsula type structure by the porous silicon anodizing technology;
4) form silicon frame 27 in silicon chip back side isotropy or anisotropic etch C type silicon cup pressure-sensitive film 26, to discharge sin beam, finish the manufacturing (Fig. 2 d) of pressure sensor chip with rare potassium hydroxide (KOH) solution corrosion porous silicon.
The present invention improves the resonant beam structure design, beam is only supported by two peninsulas, and pass through the release that the porous silicon sacrificial layer technology is realized beam, need not the manufacturing that bonding and reduction process can be finished the resonance type pressure sensor chip, guarantees to have higher sensitivity simultaneously.This reduces cost to improving yield rate, and realizing producing in batches has important meaning.Finite element analogy analysis and experimental result have confirmed to adopt the validity of this new structure.
Claims (12)
1, a kind of beam-film integrated arrangement resonance beam pressure sensor chip is characterized in that, comprising:
One silicon chip is manufactured with one deck silicon nitride film on the silicon chip;
Have a groove on silicon nitride film and silicon chip, this groove is generally I-shaped like one, forms the two rectangle peninsulas, and it is resonance beam that the silicon nitride on this two rectangles peninsula is communicated with;
Be rectangular frame around the groove of opening on this silicon chip, the bottom of this groove is the rectangle pressure membrane.
2, by the described beam-film integrated arrangement resonance beam pressure sensor of claim 1 chip, it is characterized in that wherein said silicon chip is the low-resistivity monocrystalline silicon piece.
By the described beam-film integrated arrangement resonance beam pressure sensor of claim 1 chip, it is characterized in that 3, wherein said silicon nitride film is the low stress thick silicon nitride of low-pressure chemical vapor deposition growth, thickness is more than 2 microns.
4, by the described beam-film integrated arrangement resonance beam pressure sensor of claim 1 chip, it is characterized in that the wherein said peninsula is a cuboid, width is more than 3 times of resonance beam.
5, a kind of manufacture method of beam-film integrated arrangement resonance beam pressure sensor chip is characterized in that, may further comprise the steps:
1) on the twin polishing monocrystalline silicon piece of P type (100) crystal orientation low-resistivity, adopt low-pressure chemical vapor deposition method deposition low stress thick silicon nitride film, be used to make resonance beam;
2) use lithography stripping method sputter platinum resistance, make exciting, pick-up and temperature detecting resistance, evaporation or sputter gold are made contact conductor;
3) reactive ion etching silicon nitride is made sin beam and peninsular structure, anodic oxidation growth porous silicon, and the horizontal undercutting characteristic of utilizing porous silicon to grow makes the beneath silicon of sin beam all become porous silicon;
4) form silicon frame in silicon chip back side isotropy or anisotropic etch C type silicon cup pressure-sensitive film, to discharge sin beam, finish the manufacturing of pressure sensor chip with rare potassium hydroxide solution corrosion of porous silicon.
6, by the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that wherein said silicon chip is the low-resistivity monocrystalline silicon piece.
By the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that 7, wherein said silicon nitride film is the low stress thick silicon nitride of low-pressure chemical vapor deposition growth, thickness is more than 2 microns.
8, by the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that wherein said exciting, pick-up resistance and temperature detecting resistance all adopt platinum film resistor.
9, by the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that wherein said silicon nitride resonance beam is supported by two peninsular structures.
10, by the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that, wherein make positive peninsula type structure by the porous silicon anodizing technology.
By the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that 11, wherein the growth degree of depth of porous silicon guarantees the whole porous of monocrystalline silicon that sin beam is beneath.
12, by the manufacture method of the described beam-film integrated arrangement resonance beam pressure sensor of claim 5 chip, it is characterized in that the wherein said peninsula is a cuboid, width is more than 3 times of deck-siding, and thickness is identical with the porous silicon degree of depth.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100439235C (en) * | 2007-06-27 | 2008-12-03 | 温州大学 | Method for manufacturing silicon chip of ultramicro tension pressure sensor |
| CN100465088C (en) * | 2006-12-22 | 2009-03-04 | 北京航空航天大学 | Phi-shaped resonant micromechanical silicon pressure sensor |
| CN1944235B (en) * | 2006-11-03 | 2011-07-20 | 北京航空航天大学 | Electromagnetic-magnetoelectric type micro mechanical resonant beam structure |
| CN102297741A (en) * | 2010-06-25 | 2011-12-28 | 中国科学院电子学研究所 | Silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems |
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN102928131A (en) * | 2012-10-09 | 2013-02-13 | 西安交通大学 | Quartz resonance beam type micro-pressure sensor chip |
| CN102944339A (en) * | 2012-10-22 | 2013-02-27 | 北京大学 | Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof |
| CN103557967A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance mode pressure sensor core and manufacturing method |
| CN103557970A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Electrostatic excitation/piezoresistance detection miniature silicon resonant pressure sensor and manufacturing method thereof |
| CN104344917A (en) * | 2013-07-24 | 2015-02-11 | 横河电机株式会社 | Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer |
| CN105203234A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院电子学研究所 | Resonant type pressure sensor |
| CN108931321A (en) * | 2018-06-21 | 2018-12-04 | 中国计量大学 | Beam-island-film integration resonant mode pressure sensor structure and manufacturing method |
| CN109250682A (en) * | 2018-09-25 | 2019-01-22 | 中国电子科技集团公司第四十九研究所 | A kind of preparation method of suspension beam-membrane structure |
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| CN101294824B (en) * | 2007-04-25 | 2010-08-18 | 中国科学院电子学研究所 | Electromagnetic micro-torsional pendulum resonant vibration type sensor based on micro-electronic mechanical skill |
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- 2002-09-26 CN CNB021433607A patent/CN1223832C/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1944235B (en) * | 2006-11-03 | 2011-07-20 | 北京航空航天大学 | Electromagnetic-magnetoelectric type micro mechanical resonant beam structure |
| CN100465088C (en) * | 2006-12-22 | 2009-03-04 | 北京航空航天大学 | Phi-shaped resonant micromechanical silicon pressure sensor |
| CN100439235C (en) * | 2007-06-27 | 2008-12-03 | 温州大学 | Method for manufacturing silicon chip of ultramicro tension pressure sensor |
| CN102297741A (en) * | 2010-06-25 | 2011-12-28 | 中国科学院电子学研究所 | Silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems |
| CN102297741B (en) * | 2010-06-25 | 2013-06-05 | 中国科学院电子学研究所 | Silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems |
| CN102809450B (en) * | 2012-08-09 | 2014-08-27 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN102928131A (en) * | 2012-10-09 | 2013-02-13 | 西安交通大学 | Quartz resonance beam type micro-pressure sensor chip |
| CN102928131B (en) * | 2012-10-09 | 2014-11-05 | 西安交通大学 | Quartz resonance beam type micro-pressure sensor chip |
| CN102944339A (en) * | 2012-10-22 | 2013-02-27 | 北京大学 | Piezoresistive pressure sensor of MEMS (Micro-Electro-Mechanical Systems) and preparation method thereof |
| CN104344917A (en) * | 2013-07-24 | 2015-02-11 | 横河电机株式会社 | Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer |
| CN103557970A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Electrostatic excitation/piezoresistance detection miniature silicon resonant pressure sensor and manufacturing method thereof |
| CN103557967A (en) * | 2013-11-22 | 2014-02-05 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance mode pressure sensor core and manufacturing method |
| CN103557970B (en) * | 2013-11-22 | 2015-05-13 | 中国电子科技集团公司第四十九研究所 | Electrostatic excitation/piezoresistance detection miniature silicon resonant pressure sensor and manufacturing method thereof |
| CN103557967B (en) * | 2013-11-22 | 2015-06-10 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance mode pressure sensor core and manufacturing method |
| CN105203234A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院电子学研究所 | Resonant type pressure sensor |
| CN108931321A (en) * | 2018-06-21 | 2018-12-04 | 中国计量大学 | Beam-island-film integration resonant mode pressure sensor structure and manufacturing method |
| CN109250682A (en) * | 2018-09-25 | 2019-01-22 | 中国电子科技集团公司第四十九研究所 | A kind of preparation method of suspension beam-membrane structure |
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| CN1223832C (en) | 2005-10-19 |
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