CN1477426A - Vva模式的液晶显示装置 - Google Patents

Vva模式的液晶显示装置 Download PDF

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CN1477426A
CN1477426A CNA031438717A CN03143871A CN1477426A CN 1477426 A CN1477426 A CN 1477426A CN A031438717 A CNA031438717 A CN A031438717A CN 03143871 A CN03143871 A CN 03143871A CN 1477426 A CN1477426 A CN 1477426A
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liquid crystal
pixel electrode
vva
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崔祥彦
申盛旭
洪承湖
马旌祜
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Hydis Technologies Co Ltd
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Abstract

本发明的VVA模式的液晶显示装置包括：保持预定距离相对配置的下部基板和上部基板；插入该上下部基板之间并由介电常数的各向异性为负的液晶分子构成的液晶层；形成在所述下部基板内侧面上的像素电极；形成在所述上部基板内侧面上并具有V字形槽的彩色树脂层；在包含所述V字形槽的彩色树脂层上形成的相对电极；分别夹在所述像素电极与液晶层之间和相对电极与液晶层之间的垂直取向膜；和以使偏光轴相互交叉地分别附着在所述上下部基板的外侧面上的偏光板。当然，按照本发明，不追加掩模和工序，可使形成VA模式中多畴的工序简单，可节减制造费用。

Description

VVA模式的液晶显示装置
技术领域
本发明涉及液晶显示装置，更具体地说，涉及工序简单并可实现费用节减的VVA(Valley Vertical Align)模式的液晶显示装置。
背景技术
人们一直在开发液晶显示装置(Liguid Crystal Display)来代替CRT(Cathode-ray tube)。特别是，薄膜晶体管-液晶显示装置由于实现了所述CRT所具备的显示画面的高画面质量，大型和彩色等，在笔记本PC和监视器市场上非常引人注目，进而可以预料，其将逐步打进TV市场。
这种薄膜晶体管-液晶显示装置典型地利用TN(Twist Nematic：扭曲向列)模式来作为其驱动模式。但是，所述TN模式由于具有低视角和响应速度特性而要求对其进行改善，因此，提出了VA(Vertical Align)模式、IPS(In-PlaneSwitching)模式等，此外，还提出了改善响应速度特性的OCB(OpticallyCompensated Bend)及FLC(Ferro electric Liquid Crystal)等。此外，最近正在开发制造工序简单，不需要偏光板的PDLC(Polymer Dispersed Liquid Crystal)等。
特别是，所述VA模式不仅可改善响应速度和低视角，并且通过使用垂直取向膜，可省略取向工序即抛光工序，对此正在进行许多技术开发。
虽未图示，这种VA模式的液晶显示装置具有如下结构：在分别具有液晶驱动电极的上下部基板之间插入由介电常数的各向异性为负的液晶构成的液晶层，在所述上下部基板的各个相对面上设置垂直取向膜，在上下部基板的相对面的各个背面上附着偏光板，此时，上下偏光板的偏光轴相互交叉。
在形成电场以前，这种VA模式的液晶显示装置因垂直取向膜的影响液晶分子与基板垂直地排列，此时，与上下偏光板垂直交叉有关，呈现暗的画面。之后，在上下部基板的液晶驱动电极之间形成电场时，液晶分子翻转，长轴弯曲成与电场方向垂直，由此，光通过弯曲的液晶分子泄漏，呈现白画面。
另一方面，在所述VA模式的液晶显示装置中，与液晶分子为棒形有关，折射率具有各向异性，由此，眺望液晶分子的长轴时的画面相与眺望液晶分子的短轴时的画面相彼此不同。特别是，形成电场之前，由于液晶分子与基板垂直地排列，因而画面的正面变成完全暗的状态，光在侧面泄漏，导致画面质量低。
因此，为了防止上述的因液晶分子的折射率各向异性引起的画面质量低，提出了多种方式的VA模式的液晶显示装置，例如，富土通公司的MVA(Multidomain Vertical Align)，SHARP公司的ASV(Advanced super View)和韩国三星公司的PVA(Pattemed Vertical Align)模式的液晶显示装置已批量生产。
但是，虽未图示说明，所述MVA、ASV和PVA模式的液晶显示装置与典型的VA及TN模式的液晶显示装置相比，在其制造时，还需要一个掩模(Mask)，因而有增加制造工序和费用的问题。
详细地说明，所述MVA、ASV和PVA模式都是通过形成多畴来补偿液晶分子的折射率的各向异性的变形驱动模式，作为形成所述多畴的手段，富土通公司的MVA模式在上部基板形成突起图形，三星公司的PVA模式在上部基板上形成ITO缝隙。
然而，为了形成所述的突起图形和ITO缝隙，应追加一个掩模，此外，由于必须追加进行光致抗蚀剂的涂敷、硬化、曝光及显影工序和蚀刻工序，以及光致抗蚀剂的起模(strip)工序等，结果，与典型的VA及TN模式相比，所述的MVA、ASV和PVA模式等不仅制造工序复杂，而且制造费用增加。
发明内容
因此，本发明是为解决上述问题而提出的发明，其目的在于提供一种可实现工序简单及费用节减的VVA模式的液晶显示装置。
为实现上述目的，本发明提供一种VVA模式的液晶显示装置，该装置包括：保持预定距离相对配置的下部基板和上部基板；插入所述上下部基板之间并由介电常数的各向异性为负的液晶构成的液晶层；形成在所述下部基板内侧面上的像素电极；形成在所述上部基板内侧面上并具有V字形槽的彩色树脂层；在包含所述V字形槽的彩色树脂层上形成的相对电极；分别夹在所述像素电极与液晶层之间和相对电极与液晶层之间的垂直取向膜；和以使偏光轴相互交叉地分别附着在所述上下部基板的外侧面上的偏光板。
其中，完备所述V字形槽，以使单位像素至少分割为两个以上区域，例如，在单位像素内具备“+”字形、“×”字形和U字形图形。
此外，所述像素电极按板或缝隙结构来形成，此外，在单位像素内分割形成为至少两个以上。
按照本发明，在形成彩色树脂层时通过变更掩模来形成V字形槽，不追加其它的掩模工序也可形成多畴，因而可防止制造工序及费用的增加。
根据对以下参照的本发明最佳实施例的说明，将明确以上所述的本发明的目的和其它特征以及优点等。
附图说明
图1A和B是说明本发明第1实施例的VVA模式的液晶显示装置的剖面图。
图2A和B是说明本发明第2实施例的VVA模式的液晶显示装置的剖面图。
图3A-D是说明基于V字形槽和像素电极结构的多畴形成的图。
具体实施方式
以下，参照附图来详细说明本发明的优选实施方式。
图1A和图1B是说明本发明第1实施例的VVA模式的液晶显示装置的剖面图，其中，图1A是电场形成前的剖面图，图1B是电场形成后的剖面图。
如图所示，本发明的VVA模式的液晶显示装置具有如下结构：在具有像素电极3的下部基板1与具有相对电极13的上部基板11之间，插入由介电常数的各向异性为负的多个液晶分子21构成的液晶层30。
在所述下部基板1与上部基板11的各个相对面上，设置用于电场形成前的液晶取向的垂直取向膜4、14，在所述下部基板1与上部基板11的各个相对面的背面附着偏光板(未图示)。此时，所述上下偏光板以使它们的偏光轴相互交叉地附着。
特别是，在上部基板11的内侧面上形成彩色树脂层12，在所述彩色树脂层12上形成相对电极13，在所述相对电极13上设置垂直取向膜14，在所述彩色树脂层12具有V字形槽(Valley：15)，因此，所述相对电极13和垂直取向膜14形成在包含所述V字形槽15的彩色树脂层12上。
在形成红(R)、绿(G)和蓝(B)彩色树脂层时，通过变更掩模来形成所述V字形槽15，因此，不追加用于形成所述V字形槽15的其它掩模和工序。
在图1A和1B中，未说明的附图标号2表示栅绝缘膜。
按照本发明的VVA模式的液晶显示装置，如图1A所示，在所述像素电极3与相对电极13之间形成电场前，液晶分子21因垂直取向膜4、14的影响，而与基板1、11垂直排列。
之后，如图1B所示，一旦在所述像素电极3与相对电极13之间形成电场(E)，液晶分子21就翻转，使其长轴与电场(E)的方向垂直，从而泄漏光，此时，在V字形槽15附近，电场产生畸变，液晶分子21形成多畴，结果，可补偿起因于液晶的折射率的各向异性的倾斜的视角的相位延迟(phaseretardation)。
结果，本发明的VVA模式的液晶显示装置仍然维持现有的VA模式液晶显示装置的下部基板和上部基板的制造工序，仅仅通过变更形成彩色树脂层时的掩模，在所述上部基板上形成V字形槽，便可具有与呈现多畴的富土通公司的MVA、SHARP公司的ASV和韩国三星公司的PVA模式的液晶显示装置相同的光特性，能够节减其制造工序和费用。
图2A和图2B是说明本发明第2实施例的VVA模式液晶显示装置的剖面图，在该实施例中，下部基板1的像素电极3不是板结构而是具有缝隙(slit)结构，其余的构成要素与以前的实施例的要素相同。此外，仅仅所述像素电极的形成不同，下部基板1和上部基板11的制造工序与以前的实施例相同。
按照该实施例，由于按缝隙结构来形成下部基板1的像素电极3，因而容易形成多畴，由此，使液晶取向稳定。
即，如图2A所示，在所述像素电极3与相对电极13之间形成电场前，液晶分子21因垂直取向膜4、14而与基板1、11垂直排列，如图2B所示，一旦在所述像素电极3与相对电极13之间形成电场，液晶分子21的长轴就与电场方向垂直地弯曲，此时，因所述V字形槽15，电场产生畸变，因而产生由所述像素电极3的缝隙引起的再一次电场畸变，因此容易形成多畴，液晶取向变得稳定
图3A-图3D是说明由V字形槽和像素电极的结构引起的多畴形成的像素结构的平面图，分别是下列情况下的平面图：将彩色树脂层中的V字形槽形成为“+”字形、即按四个区域来分割形成单位像素，同时，在形成像素电极使其覆盖所有像素的场合，将像素电极分割为两个区域来形成的情况下；将像素电极分割为三个区域来形成的情况下；和将像素电极分割为四个区域来形成的情况下。其中，附图标号3表示像素电极，13表示相对电极，15表示V字形槽，16表示黑色矩阵。
参照图3A，在按“+”字形形成V字形槽15，按一体来形成像素电极3的情况下，在像素内形成四个液晶畴。
参照图3B，在按“+”字形形成V字形槽15，将像素电极3分割形成为两个的情况下，通过分割为两个的像素电极，形成两个液晶畴，总体来说，形成了四个液晶畴。
参照图3C，在按“+”字形形成V字形槽15，将像素电极3分割形成为三个的情况下，通过在分割为三个的像素电极中的配置于中间的像素电极，形成四个液晶畴，分别在所述中间的像素电极与其上、下配置的像素电极之间形成两个畴，结果，形成八个液晶畴。
参照图3D，在按“+”字形形成V字形槽15，将像素电极3分割形成为四个的情况下，通过在分割为四个的像素电极中配置于中间的像素电极，形成四个液晶畴，分别在所述中间的像素电极与其上、下配置的像素电极之间形成两个畴，结果，形成八个液晶畴。
另一方面，虽未图示，上述V字形槽和像素电极可变更为多种形态，即：可形成所述V字形槽，使单位像素被分割为四个、六个、八个和十个等区域，此外，不仅“+”字形，也可以形成为“×”字形和U字形，并且，与此对应，像素电极的形态可变更为多种形态。
通过这种组合，可容易地形成多畴，因此，能够使液晶取向稳定。
如上所述，本发明通过在形成彩色树脂层时变更掩模，形成V字形槽，不追加其它掩模工序，就可形成多畴，由此，能够节减制造工序和费用，结果，提高生产性，和原价竞争力。
此外，本发明可在不脱离其实质的范围内进行各种变更。

Claims (5)

1.一种VVA模式的液晶显示装置，其特征在于包括：
保持预定距离相对配置的下部基板和上部基板；
插入所述上下部基板之间并由介电常数的各向异性为负的液晶分子构成的液晶层；
在所述下部基板内侧面上形成的像素电极；
形成在所述上部基板内侧面上并具有V字形槽的彩色树脂层；
在包含所述V字形槽的彩色树脂层上形成的相对电极；
分别夹在所述像素电极与液晶层之间和相对电极与液晶层之间的垂直取向膜；和
以使偏光轴相互交叉地分别附着在所述上下部基板的外侧面上的偏光板。
2.如权利要求1所述的VVA模式的液晶显示装置，其特征在于，完备所述V字形槽以使所述单位像素至少分割为两个以上的区域。
3.如权利要求2所述的VVA模式的液晶显示装置，其特征在于，完备所述V字形槽以使所述单位像素按“+”字形、“×”字形和U字形分割。
4.如权利要求1所述的VVA模式的液晶显示装置，其特征在于，所述像素电极按板或缝隙结构制作。
5.如权利要求4所述的VVA模式的液晶显示装置，其特征在于，所述像素电极在单位像素内至少分割为两个以上后形成。
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CN101273300B (zh) * 2005-09-30 2010-05-19 夏普株式会社 液晶显示装置
CN109270741A (zh) * 2018-11-13 2019-01-25 成都中电熊猫显示科技有限公司 一种显示面板及显示装置

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