CN1474414A - Non-volatile memory storage system needing no redundant column and its writing -in method - Google Patents
Non-volatile memory storage system needing no redundant column and its writing -in method Download PDFInfo
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Abstract
The present invention relates to one non-volatile memory storage system needing no redundant column and its write-in method. Data to be written in is first written into temporary storage. Then, the content of MCF part in the logic write-in destination address obtained through decoding is used as the practical write-in address. The content of MCF part is used in judging whether the block of the practical write-in address have data, if so, one new replacing block is taken out from the substitution table and at least one sum of data is written from the temporary storage to the replacing block.
Description
Technical field
The invention relates to a kind of non-volatile memory storage system and wiring method thereof, refer to a kind of non-volatile memory storage system and wiring method thereof that need not use redundant field (redundancy) especially.
Background technology
General flash memory is when writing data, and the data that need last time write down is erased earlier and just can be write after (erase) moves.The overlong time that this makes when writing data to be spent, and become a flash memory big shortcoming in the use.So the design of the non-volatility memorizer that need not to erase and can repeat to write is just arranged, and, becomes an epochmaking problem then for the access usefulness that how to promote this kind non-volatility memorizer.
Again, flash memory is write data, normally with the plurality of blocks of the inside of flash memory as writing unit.And in each block, generally with last several bit groups as redundant field (redundancy), with the data that writes state and other block information that writes down this block.This will make must check the redundant field that writes target block at every turn before writing data, and increases the write time, and redundant field occupied each and write the limited space of block, makes the free space that writes block diminish.
The inventor whence originally in the spirit of positive invention, is urgently thought a kind of new " need not use the non-volatile memory storage system and the wiring method thereof of redundant field " to address the above problem because of in this, and several times research experiment is eventually to the invention of finishing these good common people of suffering from.
Summary of the invention
Fundamental purpose of the present invention is that a kind of non-volatile memory storage system and wiring method thereof that need not use redundant field is being provided, and takes place so that the data that the writes time that can shorten non-volatility memorizer is lost the data situation because of other external factors when avoiding writing data.
According to a characteristic of the present invention, the present invention is a kind of need not to use the non-volatile memory storage system of redundant field, it is characterized in that, mainly comprise: at least one non-volatility memorizer, has plurality of blocks, wherein at least one block is in order to store a system table, and this system table comprises a plurality of mapping control group bit tables, and each MCF table also comprises a plurality of mapping control fields; And a working storage, desire to write the target data of this at least one non-volatility memorizer in order to temporary at least one pen, this working storage comprises a temporary MCF table, this temporary MCF table comprises at least one MCF value of this system table; Wherein, this main frame sends one and writes instruction and write at least one target data to this at least one non-volatility memorizer, this writes instruction is to comprise a target MCF sequence number, and according to this target MCF sequence number the target MCF value that should keep in the MCF table is write this at least one non-volatility memorizer.
Wherein each mapping control group bit table more comprises a list character, a mapping control group bit table flag, a mapping control group bit table sequence number, a mapping control field group sequence number, at least one other information and a plurality of replacement blocks address.
Wherein each mapping control field also comprises an information unit state to be written, a mapping device sequence number and a mapping physical blocks address.
Wherein this working storage also comprises a temporary mapping control group position index table, when not having this temporary MCF table for the MCF value of this target MCF table number correspondence, then see through and temporaryly to shine upon control group position index table and these mapping control fields group sequence number, directly seek the MCF that comprises this target MCF value in this system table and show, and be written into this MCF table to showing by temporary MCF.
The pairing at least one block in mapping physical blocks address as this target MCF does not have data to exist, at least one the target data that then will write this working storage writes this at least one block, otherwise see through at least one replacement block address and take out at least one replacement block, and at least one the target data that will write this working storage write this at least one replacement block, and the address of this at least one replacement block and the MPBA of this target MCF are upgraded mutually.
Wherein be at least one replacement block address updating system admin table, and utilize the mapping control group bit table flag of the MCF table of a plurality of setting value annotations renewals, and judge as right of priority with these a plurality of setting values with this renewal.
When these a plurality of setting values comprise one first setting value, one second setting value, and one the 3rd setting value, then this first setting value is less than this second setting value, and this second setting value is less than the 3rd setting value, and the 3rd setting value is less than this first setting value.
As the MTF of this target MCF value in this system table is this first setting value, and then the MPF annotation to the MCF value of this renewal is this second setting value.
Wherein this MDN uses so that corresponding MCF directly corresponds to a non-volatility memorizer.
Wherein, more comprise an information unit state to be written, a mapping control field right of priority flag, a mapping control field sequence number among each MCF, reach a mapping physical blocks address, and this working storage also comprises a permutation table, and this permutation table has the replacement block address of a plurality of these at least one non-volatility memorizers.
When there is not this temporary MCF table in the MCF value of this target MCF sequence number correspondence, then be written at least one the MCF value that comprises this target MCF value and showed to keeping in MCF by this system table.
Wherein, the pairing at least one block in mapping physical blocks address as this target MCF does not have data to exist, at least one the target data that then will write this working storage writes this at least one block, otherwise take out at least one replacement block by this permutation table, and this at least one target data that has write this working storage write this at least one replacement block, then the address of this at least one replacement block and the MPBA of this target MCF are upgraded mutually.
With at least one replacement block address updating system admin table of this renewal, and utilize the mapping of the MCF table of a plurality of setting value annotations renewals to control field right of priority flag, and judge as right of priority with these a plurality of setting values.
Wherein, be with the value of the information unit state to be written of this target MCF the information state that writes as at least one block of this mapping physical blocks address correspondence.
The present invention is a kind of need not to use the wiring method of the non-volatile memory storage system of redundant field, be to write data to a stocking system for a main frame, this stocking system comprises a working storage and at least one non-volatility memorizer, this at least one non-volatility memorizer has plurality of blocks, wherein at least one block is in order to store a system table, this system table comprises a plurality of mapping control group bit tables, each mapping control group bit table also comprises a plurality of mapping control fields, one mapping control group bit table flag, one mapping control group bit table sequence number, one mapping control field group sequence number, and a plurality of replacement blocks address, also comprise a mapping physical blocks address among each MCF; This working storage has a temporary MCF table, should have at least one MCF value of this system table by temporary MCF table, it is characterized in that, this wiring method mainly comprises as following step: (A) instruction that writes that this main frame is sent is decoded, translate this and write the corresponding logic of instruction and write destination address to separate, this logic writes the mapping control field sequence number that destination address comprises a target MCF: (B) this is write and instruct the target data of desiring to write to write this working storage: (C) do not have this temporary MCF table as this target MCF value, then see through and temporaryly to shine upon control group position index table and these mapping control fields group sequence number, directly seek at least one MCF that comprises this target MCF value in this system table and show, and be written into this at least one MCF table to showing by temporary MCF; (D) write the address with the MPBA of this target MCF value as the entity of this non-volatility memorizer: (E) at least one block that writes the address correspondence as this entity does not have data to exist, the target data that then will write this working storage writes at least one block that this entity writes the address correspondence: and the existing data existence of at least one block that (F) writes the address correspondence as this entity, then see through at least one replacement block address and take out at least one replacement block, and this target data that has write this working storage write this at least one replacement block, and upgrade with the address of this at least one replacement block should temporary MCF table.
In step (F), be that the data that earlier this entity is write at least one block of address correspondence writes this working storage wherein, the target data of write registers writes this at least one replacement block again.
Wherein also comprising a step (G), is to upgrade a MCF in this system table with this at least one replacement block address, and the MTF in the MCF table of the MCF that comprises this renewal is given annotation.
Wherein this target block attribute field also comprises an information unit state to be written, and this information unit state to be written is the information state that writes as at least one block of this mapping physical blocks address correspondence
Because structure of the present invention and method novelty can provide on the industry and utilize, and truly have the enhancement effect, so apply for patent of invention in accordance with the law.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with accompanying drawing and preferred embodiment describes in detail as after, wherein:
Fig. 1 is a system architecture diagram of the present invention.
Fig. 2 a is first kind of mapping control group bit table of the present invention.
Fig. 2 b is the data formats of first kind of mapping control field of the present invention.
Fig. 2 c is a temporary mapping control group position index hoist pennants of the present invention.
Fig. 3 is the data formats of second kind of mapping control group bit table of the present invention and mapping control field thereof.
Fig. 4 is the process flow diagram that writes of the present invention.
Fig. 5 is the synoptic diagram that writes of first embodiment of the invention.
Fig. 6 is the synoptic diagram that writes of second embodiment of the invention.
Fig. 7 is the taking-up replacement block action synoptic diagram of second embodiment of the invention.
Embodiment
Fig. 1 shows system architecture diagram of the present invention, mainly is made of host side 1 and stocking system 2.Wherein, host side 1 can be any computer apparatus with microprocessor or controller maybe can take device, for example is a notebook computer or PDA(Personal Digital Assistant) device.Stocking system 2 has a working storage 3 and a non-volatility memorizer module 4.Working storage 3 is to be divided into two main set section A and B, and each set section comprises plurality of sections (sector) 31, and in present embodiment, a set section is preferably and comprises four sections 31.
(this extends table 30 can be permutation table 33 (swaptable) or temporary MCF concordance list 34 for Mapping Control Field, MCF) table 32 and an extension table 30 also to comprise a temporary mapping control field in working storage 3.Working storage 3 can be any memory storage, and in present embodiment, working storage 3 is preferably a stochastic and dynamic access memory (RAM).
Non-volatility memorizer module 4 has a plurality of non-volatility memorizers, and in present embodiment, non-volatility memorizer module 4 for example is two above non-volatility memorizers 5,6,7.Wherein, first non-volatility memorizer 5 has at least one data working storage 51, a plurality of data blocks 52, a plurality of replacement block 53, system management (system management table) table 54, block state table 55 and general information table 56.
System table 54 is the spaces that take at least one block, block state table 55 is mainly used to write down the state (promptly good, bad) of all blocks in this non-volatility memorizer 5, and general information table 56 item is used for the required parameter of place system running and shows the clustering index table with MCF.The data formats of relevant temporary MCF concordance list 34 holds the back statement.
In present embodiment, non-volatility memorizer 5 is preferably has a data working storage 51, and data working storage 51 is preferably has four pages or leaves 511.Each data blocks 52 in the non-volatility memorizer 5 is preferably has four pages or leaves 521,522,523,524 (page), and the size of each page in the data blocks 52 (size) equals each section 31 in the working storage 3, also equals each page or leaf 511 in the data working storage 51.Aforesaid non-volatility memorizer module 4 is to be embedded in a portable apparatus, or is mounted in the portable multimedia storing card, for example pcmcia card, secure digital storage (SD) card.
Other non-volatility memorizer 6,7 boths have the block state table 64,74 of itself.Excessive and can't store when the stored system table of non-volatility memorizer 5 54, then non-volatility memorizer 6 can be shared stocking system admin table 63.Then can be stored into non-volatility memorizer 7 to unnecessary part again if system table 63 is still excessive.System table 54 mainly is made up of a plurality of MCF table institute, promptly its comprise a MCF show to troop (for example: MCF table 0, MCF table 1, MCF table 2 ..., MCF shows n), various fields that comprised in the MCF table and uses thereof below will be described in detail in detail.
Fig. 2 a shows the synoptic diagram of first kind of MCF table, mapping control group bit table 541 (for example: be mainly to comprise a plurality of mapping control fields 5411, (MCF), list character 542 (Table Attribute MCF table 0), TA), mapping control group bit table flag 543 (MCF TableFlag, MTF), mapping control group bit table sequence number 544 (MCF Table Number, MTN), mapping control field group sequence number 545 (MCF Group Number, MGN), other information 546 and a plurality of replacement blocks address 547.
Fig. 2 b shows the data formats (Format) of mapping control field, it is mainly by information unit state to be written (Data Unit State, DUS) 5412, mapping device sequence number 5413 (Mapping Device Number, MDN) and mapping physical blocks address 5414 (Mapping, Physical Block Address MPBA) forms.In present embodiment, MCF table 541 is preferably has 256 MCF5411.
Because of each MCF5411 all has mapping device sequence number 5413 (MDN), so each MCF5411 directly corresponds to a specific non-volatility memorizer 5,6,7, so that calculate the time that corresponds to writing station, to improve usefulness for saving.For example: work as MDN=0, then correspond to non-volatility memorizer 5; Work as MDN=1, then directly correspond to non-volatility memorizer 6.(for example: the direct corresponding Swap0 of MCF0), and this replacement block address 547 is can be recycling to the more direct corresponding replacement block address 547 of each MCF5411, and each MCF5411 also can correspond to a plurality of replacement blocks address 547 certainly.
Aforesaid list character 542 (TA) be the character that is used for representing this MCF table 541 (please be a) with reference to Fig. 2, for example: TA542 is MCF table 541 for " M ", and " B " is block state table 55, and " G " is general information table 56.MCF table sequence number 544 (MTN) is the numbering that is used for representing this MCF table 541, for example: MCF0, MCF1 ..., MCFN.
Mapping control group bit table flag 543 (MTF) are used for annotation MTN54, occur identical MTN544 to solve simultaneously in this MCF table 541, and the algorithm of relevant annotation is held the back statement.Mapping control field group sequence number 545 (MGN) are the MCF groups under this MCF table 541 of expression.Other information 546 (Other) represent that other are about the information of MCF table 541 or as other utilizations.
Fig. 2 c shows the synoptic diagram of temporary mapping control group position index table, it is formed by a plurality of mapping control field group 341 (MCF Group), and each mapping control field group 341 is more by operative installations sequence number 3411 (Using Device Number, UDN), form is searched length 3412 (Table Searching Length, TSL) and search start address 3413 (Searching Begin Address, SBA) formation that continues.Mapping control field group 341 be with Fig. 2 b in MGN545 corresponding mutually, for there be not (please refer to Fig. 1) when keeping in MCF table 32 when the corresponding MCF5411 value of target MCF table sequence number 544 (MTN), then see through temporary mapping control group position index table 34, directly comprise at least one MCF value of target MCF value in the searching system table 54, and be written into this at least one MCF value to keeping in MCF table 32.
For example: MCF group 341 is that (00-001111b 0 * 1234h), then the pairing MCF table 541 of 00 expression is stored in non-volatility memorizer 5 and (and please refer to Fig. 1 and Fig. 2 a), the start address that 0 * 1234h representative is searched, the pre-search length of searching form of 001111 expression.Therefore, search and follow a MCF table 541 that is stored in the non-volatility memorizer 5, and search area is from 0 * 1234h to 0 * 1244h (001111b+0 * 1234=0 * 1244h).Certainly, the mode that comprises at least one MCF value of target MCF value in the above-mentioned searching system table 54 can be utilized hash function (Hash Function) seeking method commonly used in the data structure, or other data searching methods.
Fig. 3 shows the data formats of another kind of mapping control group bit table and mapping control field thereof.System table 54 in Fig. 1 is to have a plurality of mapping control group bit tables 548, and each MCF table 548 also has a plurality of mapping control fields 5481.Mapping control field 5481 be by have information unit state 5482 to be written (DUS), mapping control field right of priority flag 5483 (MCF Table Prioty Flag, MPF), mapping control field sequence number 5484 (MTN), other block information 5485 and mapping physical blocks address 5486 (MPBA).Wherein, mapping control field right of priority flag 5483 (MPF) are identical with the function of MTF543 among Fig. 2 a, promptly are used for annotation MTN5484.
Fig. 4 shows the write activity process flow diagram of 1 pair of stocking system 2 of host side, and please refer to Fig. 1, Fig. 2 a, and the write activity synoptic diagram of the Fig. 5 and shown first embodiment.Sending one when host side 1 writes and instructs to stocking system 2 (address 0 * 11021, the data of writing is one) (step S201), be earlier through an address decoder (logical place conversion), write destination address (step S202) to explain the logic that writes the instruction correspondence, this logic writes destination address and has mapping control field sequence number 5411.
Then, in target data write registers 2, and seek target MCF (MCF is 0 * 0006) (step S203).If target MCF does not exist in the temporary MCF table 32, then see through temporary mapping control group position index table 34 and seek the MCF table that comprises this target MCF value in the system table 54, to obtain MCF information (step S204).If target MCF exists, then obtain the MCF information.This MCF information is to comprise DUS5412 (0000b), MDN5413 (0000b), and MPBA5414 (0 * 1234).
Then, judge the write state of the pairing entity mapping of target MCF block again with DUS5412.If first bit of DUS5412 is noble potential (1), then represent the first page of existing data (Not Free) in the entity mapping block; If first bit of DUS5412 is electronegative potential (0), then represent first page in the entity mapping block can write data (Free).Because each bit of DUS5412 is all electronegative potential in the present embodiment, so this entity mapping block can write data (Free).Therefore, write second page of (Page1) (step S205) in the entity mapping block that physical address is 1234h with being stored in a target data in the working storage 3.Certainly, if DUS5412 wherein a bit is noble potential the time, then represent the existing data that writes of this entity mapping block, then must write data through a replacement block that can write data (Free).
Fig. 6 shows the second embodiment of the present invention, and please refer to Fig. 1, Fig. 2 a, and Fig. 4.Fig. 6 display entity writes the pairing block in address has data to have (Not Free), and carries out write activity through at least one replacement block.In present embodiment, its method and first embodiment that writes target data is similar, only the DUS5412 information that is comprised among the target MCF is 0111b, be that entity writes that existing data exists in the pairing block in address (MPBA=0 * 1234) (page or leaf two, page or leaf three, and page or leaf four), then with the set section A in already present source book (page or leaf two, page or leaf three, and the page or leaf four) write registers 3.
Can override data to be written (target data) in the working storage 3 because entity writes the source book that exists in the block of address correspondence, therefore must abandon by the source book that this block is interior.For example, page or leaf two in the block, page or leaf three, and a page or leaf having ideals, morality, culture, and discipline source book exist, then with the set section A in already present source book (page or leaf two, page or leaf three, and the page or leaf four) write registers 3, but because of the temporary data to be written of section A-1, so only section A-2 and A-3 in the source book in the block (page or leaf three and the page or leaf four) write registers 3.The corresponding at least one replacement block of each MCF address itself (please refer to Fig. 2 a), so see through the effective blank block (Free) that a correspondence is obtained in the directly corresponding replacement block address 547 of this target MCF, writing address (step S206) as the new MPBA of target MCF, (for example: power breakdown) situation of losing data takes place because of other external factors to avoid when writing data.
Next, and please refer to the taking-up replacement block action synoptic diagram that Fig. 7 shows second embodiment, it is to utilize the replacement block address (20801h) of the direct correspondence of target MCF (1234h) institute itself to be used as the new block (step S206) that writes of target MCF correspondence.Then, with the data (A-1-A-3) in the working storage 3.Write page or leaf in this new replacement block (2801h) two to page or leaf four (step S207).
And upgrading the MPBA5414 in the MCF5411 (0 * 0006) in the temporary MCF table 32 in the working storage 3, the MPBA5414 that is about to MCF5411 in the originally temporary MCF table and is 0 * 0006 MCF is updated to 2801h (step S208).Then block (1234h) is discharged, to become the replacement block of available (Free), and with replacement block address 5472801h) be updated to 1234h, being provided as the replacement block that uses next time, and reaching circulation and take the usefulness (step S209) of taking out replacement block to improve.
Then, update system admin table 54, method is to obtain a replacement block that is positioned at same mapping control group bit table group, utilize the mode of annotation MTF543 to represent to be positioned at the right of priority of the MCF table of the same identical numbering of trooping, avoid occurring simultaneously two identical MCF table numberings 5411 o'clock, recognize what person is for effectively reaching up-to-date MCF table, (step S210).In present embodiment, the mode of annotation be preferably adopt three setting value α, β, and γ judge as right of priority, and these three setting values (α, β, and γ) are followed an algorithm, promptly the α right of priority less than β right of priority, β right of priority less than γ right of priority and γ right of priority less than the α right of priority.
The MTF543 of original MTN544 is α in system table 53, and then the MTF543 annotation to the MCF of this renewal table is β, when taking the MCF table next time, to take out up-to-date MCF table (β).And MTN544 (α) will become an old information, and can be override to reach the effect that a circulation is taken by the replacement block address 547 of next update.
Certainly, above-mentionedly write data when the non-volatility memorizer 5 by working storage 3, be to write in the data working storage 51 of non-volatility memorizer 5 in advance, then writing the target block of non-volatility memorizer 5 again, is as the base unit that writes non-volatility memorizer 5 with one page at least so that write target data at every turn.When the data of writing is four, then earlier with the A-0 section (and please refer to Fig. 1) in the document elder generation write registers 3 to be written, and after determining to write corresponding block, write first page in the data working storage 51 of non-volatility memorizer 5 in advance, then write to be written second, third, the 4th document more respectively, its write activity is identical with the first stroke data to be written, to reach when writing data via working storage 3 write direct (go through) to data working storage 51.
Wherein, the data that has write data working storage 51 is the pairing physical blocks of write-once, make that write data all writes corresponding block with the data of one page at least in the data working storage 51 (maximum four pages of data) at every turn, write corresponding block in the non-volatility memorizer 5 to reach a set (set) staggered (interleaving).
The writing mode of above-mentioned two embodiment also can adopt the data formats of the another kind of MCF of the 3rd figure demonstration, the extension table then adopts a permutation table 33 in the working storage 3, permutation table 33 is to comprise a plurality of available replacement block addresses, takes out available (Free) replacement block for seeing through permutation table 33.Also a counter can be set counts the available number of blocks that has been removed in the permutation table 33, and permutation table 33 only is written into the available area block address by system table 54 when original state, then utilize initiate available block to take afterwards, to improve the usefulness of taking out available block as circulation.
By above explanation as can be known, the present invention writes the address by the resulting MCF information in decoding back as entity, and judge that with partial content entity writes the address block whether data is arranged, take out a new replacement block (no data in the block) if exist data then to see through the replacement block address in the corresponding block, then at least one document in the working storage is write the data working storage of pairing non-volatility memorizer, last batch write corresponding block again, calculate the time that corresponds to writing station to reach to save, to improve usefulness, and reduction is written into the data that the writes time of non-volatility memorizer, and losing the data situation because of other external factors in the time of can avoiding writing data takes place, and can judge the write state that writes target block at the redundant field that need not write target block.
In sum, no matter the present invention all is different from existing technical characterictic with regard to purpose, means and effect, is a quantum jump of " non-volatile memory storage system and wiring method thereof ".Only it should be noted that the foregoing description is for convenience of explanation, the non-the foregoing description that only limits to of the interest field that the present invention advocated, and all technical though relevant with the present invention all belong to category of the present invention.
Claims (18)
1. the non-volatile memory storage system that need not use redundant field is characterized in that, mainly comprises:
At least one non-volatility memorizer has plurality of blocks, and wherein at least one block is in order to store a system table, and this system table comprises a plurality of mapping control group bit tables, and each MCF table also comprises a plurality of mapping control fields; And
One working storage, in order to temporary at least one the target data of desiring to write this at least one non-volatility memorizer, this working storage comprises a temporary MCF table, this temporary MCF table comprises at least one MCF value of this system table;
Wherein, this main frame sends one and writes instruction and write at least one target data to this at least one non-volatility memorizer, this writes instruction is to comprise a target MCF sequence number, and according to this target MCF sequence number the target MCF value that should keep in the MCF table is write this at least one non-volatility memorizer.
2. the non-volatile memory storage system that need not use redundant field as claimed in claim 1, it is characterized in that wherein each mapping control group bit table more comprises a list character, a mapping control group bit table flag, a mapping control group bit table sequence number, a mapping control field group sequence number, at least one other information and a plurality of replacement blocks address.
3. the non-volatile memory storage system that need not use redundant field as claimed in claim 1 is characterized in that, wherein each mapping control field also comprises an information unit state to be written, a mapping device sequence number and a mapping physical blocks address.
4. the non-volatile memory storage system that need not use redundant field as claimed in claim 2, it is characterized in that, wherein this working storage also comprises a temporary mapping control group position index table, when not having this temporary MCF table for the MCF value of this target MCF table number correspondence, then see through and temporaryly to shine upon control group position index table and these mapping control fields group sequence number, directly seek the MCF that comprises this target MCF value in this system table and show, and be written into this MCF table to showing by temporary MCF.
5. the non-volatile memory storage system that need not use redundant field as claimed in claim 2, it is characterized in that, the pairing at least one block in mapping physical blocks address as this target MCF does not have data to exist, at least one the target data that then will write this working storage writes this at least one block, otherwise see through at least one replacement block address and take out at least one replacement block, and at least one the target data that will write this working storage write this at least one replacement block, and the address of this at least one replacement block and the MPBA of this target MCF are upgraded mutually.
6. the non-volatile memory storage system that need not use redundant field as claimed in claim 5, it is characterized in that, it wherein is at least one replacement block address updating system admin table with this renewal, and utilize the mapping control group bit table flag of the MCF table that a plurality of setting value annotations upgrade, and judge as right of priority with these a plurality of setting values.
7. the non-volatile memory storage system that need not use redundant field as claimed in claim 6, it is characterized in that, when these a plurality of setting values comprise one first setting value, one second setting value, reach one the 3rd setting value, then this first setting value is less than this second setting value, this second setting value is less than the 3rd setting value, and the 3rd setting value is less than this first setting value.
8. the non-volatile memory storage system that need not use redundant field as claimed in claim 7 is characterized in that, is this first setting value as the MTF of this target MCF value in this system table, and then the MPF annotation to the MCF value of this renewal is this second setting value.
9, the non-volatile memory storage system that need not use redundant field as claimed in claim 2 is characterized in that, wherein this MDN is with so that corresponding MCF directly corresponds to a non-volatility memorizer.
10. the non-volatile memory storage system that need not use redundant field as claimed in claim 1, it is characterized in that, wherein, more comprise an information unit state to be written, a mapping control field right of priority flag, a mapping control field sequence number among each MCF, reach a mapping physical blocks address, and this working storage also comprises a permutation table, and this permutation table has the replacement block address of a plurality of these at least one non-volatility memorizers.
11, the non-volatile memory storage system that need not use redundant field as claimed in claim 10, it is characterized in that,, then be written at least one the MCF value that comprises this target MCF value and showed to keeping in MCF by this system table when there is not this temporary MCF table in the MCF value of this target MCF sequence number correspondence.
12. the non-volatile memory storage system that need not use redundant field as claimed in claim 10, it is characterized in that, wherein, the pairing at least one block in mapping physical blocks address as this target MCF does not have data to exist, at least one the target data that then will write this working storage writes this at least one block, otherwise take out at least one replacement block by this permutation table, and this at least one target data that has write this working storage write this at least one replacement block, then the address of this at least one replacement block and the MPBA of this target MCF are upgraded mutually.
13. the non-volatile memory storage system that need not use redundant field as claimed in claim 10, it is characterized in that, at least one replacement block address updating system admin table with this renewal, and utilize the mapping of the MCF table of a plurality of setting value annotations renewals to control field right of priority flag, and judge as right of priority with these a plurality of setting values.
14. the non-volatile memory storage system that need not use redundant field as claimed in claim 10, it is characterized in that, wherein, be with the value of the information unit state to be written of this target MCF the information state that writes as at least one block of this mapping physical blocks address correspondence.
15. wiring method that need not use the non-volatile memory storage system of redundant field, be to write data to a stocking system for a main frame, this stocking system comprises a working storage and at least one non-volatility memorizer, this at least one non-volatility memorizer has plurality of blocks, wherein at least one block is in order to store a system table, this system table comprises a plurality of mapping control group bit tables, each mapping control group bit table also comprises a plurality of mapping control fields, one mapping control group bit table flag, one mapping control group bit table sequence number, one mapping control field group sequence number, and a plurality of replacement blocks address, also comprise a mapping physical blocks address among each MCF; This working storage has a temporary MCF table, and this temporary MCF table has at least one MCF value of this system table, it is characterized in that this wiring method mainly comprises as following step:
(A) instruction that writes that this main frame is sent is decoded, and translates this and writes the corresponding logic of instruction and write destination address to separate, and this logic writes the mapping control field sequence number that destination address comprises a target MCF:
(B) this is write the instruction target data desiring to write and writes this working storage:
(C) there is not this temporary MCF table as this target MCF value, then see through and temporaryly to shine upon control group position index table and these mapping control fields group sequence number, directly seek at least one MCF that comprises this target MCF value in this system table and show, and be written into this at least one MCF table to showing by temporary MCF;
(D) write the address with the MPBA of this target MCF value as the entity of this non-volatility memorizer:
(E) at least one block that writes the address correspondence as this entity does not have data to exist, and the target data that then will write this working storage writes at least one block that this entity writes the address correspondence: and
(F) the existing data of at least one block that writes the address correspondence as this entity exists, then see through at least one replacement block address and take out at least one replacement block, and this target data that has write this working storage write this at least one replacement block, and upgrade with the address of this at least one replacement block should temporary MCF table.
16. the wiring method that need not use the non-volatile memory storage system of redundant field as claimed in claim 15, it is characterized in that, wherein in step (F), be that the data that earlier this entity is write at least one block of address correspondence writes this working storage, the target data of write registers writes this at least one replacement block again.
17. the wiring method that need not use the non-volatile memory storage system of redundant field as claimed in claim 15, it is characterized in that, wherein also comprise a step (G), be to upgrade a MCF in this system table, and the MTF in the MCF table of the MCF that comprises this renewal is given annotation with this at least one replacement block address.
18. the wiring method that need not use the non-volatile memory storage system of redundant field as claimed in claim 15, it is characterized in that, wherein this target block attribute field also comprises an information unit state to be written, and this information unit state to be written is the information state that writes as at least one block of this mapping physical blocks address correspondence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA021273952A CN1474414A (en) | 2002-08-05 | 2002-08-05 | Non-volatile memory storage system needing no redundant column and its writing -in method |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA021273952A CN1474414A (en) | 2002-08-05 | 2002-08-05 | Non-volatile memory storage system needing no redundant column and its writing -in method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582052B (en) * | 2008-05-15 | 2011-01-05 | 慧国(上海)软件科技有限公司 | Memory module and method for performing wear-leveling of memory module |
| CN107807786A (en) * | 2016-09-08 | 2018-03-16 | 宏碁股份有限公司 | Storage device and its data mapping method |
| CN111966281A (en) * | 2019-05-20 | 2020-11-20 | 慧荣科技股份有限公司 | Data storage device and data processing method |
-
2002
- 2002-08-05 CN CNA021273952A patent/CN1474414A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582052B (en) * | 2008-05-15 | 2011-01-05 | 慧国(上海)软件科技有限公司 | Memory module and method for performing wear-leveling of memory module |
| CN107807786A (en) * | 2016-09-08 | 2018-03-16 | 宏碁股份有限公司 | Storage device and its data mapping method |
| CN111966281A (en) * | 2019-05-20 | 2020-11-20 | 慧荣科技股份有限公司 | Data storage device and data processing method |
| CN111966281B (en) * | 2019-05-20 | 2023-11-28 | 慧荣科技股份有限公司 | Data storage device and data processing method |
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