CN1485860A - Non-volatility memory access system and its cycling usage method of access space - Google Patents
Non-volatility memory access system and its cycling usage method of access space Download PDFInfo
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Abstract
The invention relates to non-volatility memory access system and circulation utilization access space method, wherein the non-volatility memory device is divided into a first division and a second division, the first division is used for storing program codes, the second division is used for storing data file, and the second division is formatted to form a plurality of access block and backup blocks, when the write-in data is in the backup blocks, a block reclamation mechanism is triggered to reclaim the non-used space through a wipe-out area.
Description
Technical field
The present invention relates to the technical field of non-volatile storage, refer to a kind of non-volatility memorizer access system especially and recycle the access space method.
Background technology
Along with being in fashion of portable electronic product, flash memory (Flash Memory) has been widely used in portable electronic product and the relevant miniature storage device thereof.In existing commercial product, modal flash memory is mainly and non-type (NAND Type) flash memory AOI type (NOR Type) flash memory.It is reading (Read), writing (Write) and is erasing (Erase) when action with NOT-AND flash, be as base conditioning unit with block (Block), and low price based on this specific character, makes the type flash memory be applied in large quantities on the Storage Media (Storage Medium).
Yet, the price of or/no type flash memory is then comparatively expensive, it the time is to be base conditioning unit with byte (Byte) writing and read action, erase when action then with block as base conditioning unit, so the or/no type flash memory is fit to be used for the stored routine actuating code, and be not suitable for being applied to general portable memory device (for example: dish) with oneself.
Again, the or/no type flash memory has certain specification when dispatching from the factory, for example: 16 megabyte (MB), 32MB or 64MB etc. if the program actuating code of desiring to deposit only needs 25MB, then must use the module of 32MB, and the space that therefore will have 7MB can't effectively utilize.If or/no type flash memory rest parts as Storage Media (promptly being used for storing general data or archives economy), then can be effectively utilized storer.But, the or/no type flash memory data writes with to read when action different with the base conditioning unit of the action of erasing, and can not read simultaneously and write activity the or/no type flash memory, make that when the or/no type flash memory was used for store program code and archives economy simultaneously, its operational effectiveness will be very low.
Summary of the invention
Fundamental purpose of the present invention is a kind of non-volatility memorizer access system to be provided and to recycle the access space method, enables to improve the access efficiency that is used for simultaneously storing data with the non-volatility memorizer of program, and effectively reclaims the block of erasing.
Another object of the present invention is a kind of non-volatility memorizer access system to be provided and to recycle the access space method, enables to make that non-volatility memorizer is used for storing data and program code simultaneously.
Above-mentioned purpose of the present invention is realized by following technical scheme.
A kind of non-volatility memorizer access system, be framework in a portable electronic devices, it is characterized in that comprising:
One non-volatile memory, it is to read and write for base conditioning unit with the byte, and erase for base conditioning unit with the block, it comprises a first area and a second area, this first area is in order to store program code, this second area is in order to the access data, this second area is to handle via a format, so that forming, each block has a plurality of page numbers, each page number has at least one byte, and these page number annotations there is one first annotation, wherein a kind of annotation of one second annotation and one the 3rd annotation makes for the data by these page numbers and this second area of annotation access thereof;
One storage unit; And
One CPU (central processing unit), it is to read and write these page numbers by this storage unit, and write data behind these page numbers to this first annotation of its annotation, wherein, when this CPU (central processing unit) is erased a block, be with the data of page number annotation in this block for this first annotation, write earlier in this storage unit, make for the page number that writes other no datat by this storage unit, and write finish after, to this this first annotation of each page number annotation that writes, and to this originally annotation be that at least one page number change annotation of this first annotation is this second annotation, make when all page numbers in this block when all annotation is this second annotation this block of then erasing, and with this erase the back block page number annotation change to the 3rd annotation, to reach a block reclaim mechanism.
Described non-volatility memorizer access system, it is characterized in that: when this CPU (central processing unit) is carried out erasing of this second area, be to erase by first block of these blocks, and the next block of erasing in regular turn, till last block of having erased.
Described non-volatility memorizer access system is characterized in that: the second area of this non-volatile memory is that planning comprises general access section and redundant district.
Described non-volatility memorizer access system is characterized in that: when this CPU (central processing unit) writes data in the page number in these redundant districts, then trigger the action of erasing.
Described non-volatility memorizer access system, it is characterized in that: this CPU (central processing unit) writes the data mode, be that first page number of first block by these blocks continues in regular turn and writes, after being written to last page number of last block, then continuing writes first page number of first block again.
Described non-volatility memorizer access system, it is characterized in that: this CPU (central processing unit) is the target page number content of judging earlier in writing in advance when writing data at every turn, if the existing data of this page number, then this CPU (central processing unit) is sent the caution message of storage space deficiency.
Described non-volatility memorizer access system is characterized in that: this CPU (central processing unit) is to judge by the annotation of this target page number, and non-as if this annotation is the 3rd annotation, then sends this caution message.
Described non-volatility memorizer access system is characterized in that: the quantity of the block in the block of this general access section and this redundant district is two-to-one.
Described non-volatility memorizer access system is characterized in that: this CPU (central processing unit) is to erase with the background erase mode.
Described non-volatility memorizer access system, it is characterized in that: this CPU (central processing unit) is via at least once write data in batches and in order, and this CPU (central processing unit) is closed its interrupt request when writing data, opens its interrupt request after the data of writing is finished.
Described non-volatility memorizer access system, it is characterized in that: when this CPU (central processing unit) writes a modification data in a page number, this CPU (central processing unit) should the modification data continues and is written into the page number of other no datat, and write finish after, to this this first annotation of page number annotation that writes, and this is revised this second annotation of script page number annotation of data.
Described non-volatility memorizer access system is characterized in that: this CPU (central processing unit) has a buffer, and this buffer has a control flag, with by the requirement of this control flag opens interrupters or close interrupt request.
Described non-volatility memorizer access system is characterized in that: this portable electronic devices is a personal digital assistant.
Described non-volatility memorizer access system is characterized in that: this portable electronic devices is an Espresso.
Described non-volatility memorizer access system is characterized in that: this non-volatile memory is the or/no type flash memory.
The present invention also provides a kind of access space method that recycles that is used for the non-volatility memorizer of above-mentioned access system.
A kind of access space method that recycles of non-volatility memorizer, be to cooperate one to have when reading with byte as base conditioning unit with write activity, and is the non-volatile memory of the characteristic of base conditioning unit in when action of erasing with the block, this non-volatile memory comprises a first area and a second area, this first area is in order to store program code, this second area is in order to the access data, this second area is to make each block all have a plurality of page numbers through format, and each page number has at least one byte, wherein, these page numbers are that annotation has one first annotation, wherein a kind of annotation of one second annotation and one the 3rd annotation, make for the data by these page numbers and this second area of annotation access thereof, this method mainly comprises the steps:
One reads the annotation step, is the annotation that reads a page number of a block;
One data-moving step if the page number annotation that reads be this first annotation, then writes the data of this page number the page number of other no datat, and this first annotation of the page number annotation that after writing data this is write, and is this second annotation to page number annotation of this script; And
The one block step of erasing, if each page number of this block all annotation is this second annotation, then this block is erased, and to its page number annotation the 3rd annotation, then repeat that this reads the annotation step, this data is moved step and this block step of erasing, all erase up to these blocks of this second area and finish.
The described access space method that recycles is characterized in that: these blocks of this second area are to be planned to general access section and redundant district.
The described access space method that recycles is characterized in that: the quantity of the block in this general access section and this redundant district is two-to-one.
The described access space method that recycles is characterized in that: in this erases the block step, be to erase with the background erase mode.
The described access space method that recycles is characterized in that: move in the step in this data, be last time of continuing to write the page number of finishing and begin to write data, and write the fashionable interrupt request of closing in data, data is opened interrupt request after writing and finishing.
The described access space method that recycles is characterized in that: move in the step in this data, when writing data when one stores the page number of block, if this stores the existing data of page number of block, then represent this second area insufficient space.
The described access space method that recycles, it is characterized in that: it is that first block by this second area begins to carry out that this reads the annotation step, this data is moved step and this block step of erasing, till the most last block of this second area is finished this block step of erasing.
The described access space method that recycles is characterized in that: this non-volatile memory is the or/no type flash memory.
According to a characteristic of the present invention, the high-level efficiency non-volatility memorizer access system that is provided is that framework is in a portable electronic devices, this high-level efficiency non-volatility memorizer access system mainly comprises: a non-volatile memory, it is to read and write for base conditioning unit with the byte, and erase for base conditioning unit with the block, it comprises a first area and a second area, this first area is in order to store program code, this second area is in order to the access data, this second area is to handle via a format, make each block all have a plurality of page numbers, each page number has at least one byte, and these page number annotations have one first annotation, wherein a kind of annotation of one second annotation and one the 3rd annotation makes for the data by these page numbers and this second area of annotation access thereof; One storage unit; An and CPU (central processing unit), it is to read and write these page numbers by this storage unit, and write data behind these page numbers to this first annotation of its annotation, wherein, when this CPU (central processing unit) is erased an access block, be with the data of annotation in this access block at least one page number of this first annotation, write earlier in this storage unit, make for the page number that writes other no datat by this storage unit, and write finish after, to this this first annotation of each page number annotation that writes, and to this originally annotation be that at least one page number change annotation of this first annotation is this second annotation, make when all page numbers in this access block when all annotation is this second annotation, this access block of then erasing, the next block of then erasing is erased until these blocks and to be finished, to reach a block reclaim mechanism.
According to another characteristic of the present invention, the access space method that recycles of the non-volatility memorizer that is provided is to cooperate one to have when reading with write activity with byte as base conditioning unit, and is the non-volatile memory of the characteristic of base conditioning unit in when action of erasing with the block, this non-volatile memory comprises a first area and a second area, this first area is in order to store program code, this second area is in order to the access data, this second area is to form each block through format all to have a plurality of page numbers, and each page number has at least one byte, wherein, these page numbers are that annotation has one first annotation, wherein a kind of annotation of one second annotation and one the 3rd annotation, make for data by these page numbers and this second area of annotation access thereof, this recycles the access space method and comprises the steps: that mainly one reads the annotation step, is the annotation that reads each page number of an access block or a redundant block; One data-moving step if the page number annotation that reads be this first annotation, then writes the data of this page number the page number of other no datat, and this first annotation of the page number annotation that after writing data this is write, and is this second annotation to page number annotation of this script; And the block step of erasing, if each page number of this access block all annotation is this second annotation, then this access block or this redundant block are erased, and to its page number annotation the 3rd annotation, then repeat that this reads the annotation step, this data is moved step and this block step of erasing, all erase up to these blocks and finish.
The invention has the advantages that:
The present invention is storage unit with the byte for effectively utilizing the or/no type non-volatility memorizer and solving the or/no type non-volatility memorizer simultaneously, block is the characteristic of the unit of erasing, in the space of storage data file is to handle through format earlier, at first, with the page number is access unit, and utilizes the annotation mode to understand the state of data in each page number; Moreover, planning has a plurality of access blocks and redundant block, enter the redundant block with write activity and be the trigger point of not using (invalid) page number as the activation recovery data state of erasing, utilize the redundant block as a cushion space, make and to guarantee the recovery block of under the state that no data is lost, erasing, reach the purpose that stores data simultaneously with program code; Moreover design writes pattern in regular turn, even if also do not write direct coverings during the data of modification, can guarantee that therefore the page number in the second area of non-performance storer can not be repeated to write data, and cause the situation generation of data mistake; In addition, utilize the method in batches write data and temporary close interrupt request, reach raising be used for simultaneously storing data access efficiency with the non-volatility memorizer of program.
For feature of the present invention, effect are had further understanding, enumerate specific embodiment now and be described with reference to the accompanying drawings as follows:
Description of drawings
Fig. 1 is the system architecture synoptic diagram of a preferred embodiment of the present invention.
Fig. 2 a is reading of a preferred embodiment of the present invention and writes data flowchart.
Fig. 2 b is that the modification data of a preferred embodiment of the present invention writes process flow diagram.
Fig. 3 is the synoptic diagram that writes of a preferred embodiment of the present invention.
Fig. 4 is the data of a preferred embodiment of the present invention process flow diagram of erasing.
Embodiment
Relevant preferred embodiment of the present invention is to illustrate with the non-volatility memorizer access system in the portable electronic devices, and in present embodiment, portable electronic devices is preferably PDA(Personal Digital Assistant) or Espresso (Pocket PC).
Fig. 1 shows system architecture synoptic diagram of the present invention, it mainly comprises CPU (central processing unit) (CPU) 1, storage unit 2 and non-volatile memory 3, wherein, CPU (central processing unit) 1 has at least one buffer 11, it is to be used for temporary a plurality of interrupt requests (for example: can keep in 32 interrupt requests) and interrupt request control flag 111, non-volatile memory 3 is divided into first area 31 and second area 32 at least, first area 31 is in order to the executive routine code of the operating system of storage portable electronic devices, second area 32 makes to store general data file in order to as Storage Media.Certainly, non-volatile memory 3 more can comprise the 3rd zone, to be used for stocking system boot program or test procedure.
In present embodiment, to have reading and write fashionable be base conditioning unit with the byte for a kind of for non-volatile memory 3, and when erasing (Erase), be the characteristic of base conditioning unit with the block, non-volatile memory 3 is preferably or/no type (NOR Type) flash memory, and storage unit 2 is preferably random-access memory (ram).Above-mentioned CPU (central processing unit) 1 is to deposit data in the second area 32 of non-volatile memory 3, the following action flow chart that the data of CPU (central processing unit) 1 access second area 32 will be described by storage unit 2.
Process flow diagram and the synoptic diagram that shows with reference to Fig. 1, Fig. 2 a and Fig. 3 in the lump please.At first, before the second area 32 of non-volatile memory 3 is as Storage Media (when for example PDA starts shooting for the first time), must format processing (step S201) to second area 32 earlier, make for forming a plurality of storage blocks at second area 32, wherein, each stores block and all has a plurality of page numbers (Page), and this second area 32 is planned a plurality of access blocks 321 and a plurality of redundant block (Buffer Blocks) 323 again, these access blocks 321 are two-to-one with the number of blocks of these redundant blocks 323 than preferably, in present embodiment, the number of these page numbers is preferably four and (is numbered 3211 as shown in Figure 3,3212,3213,3214), certainly each page number is made up of a plurality of bytes 331, make when supplying CPU (central processing unit) 1 to read or write the data of second area 32, and be as basic access unit with page number.
Finish after the format, CPU (central processing unit) 1 just can be carried out data access to second area 32.Why CPU (central processing unit) 1 can judge the present action of carrying out earlier before access second area 32, if read action, then CPU (central processing unit) 1 is set at the high levels state with the interrupt request control flag 111 of its buffer 11, require action with opens interrupters, that is other device can send interrupt request (step S202) to CPU (central processing unit) 1, then, CPU (central processing unit) 1 begins that these access blocks 321 in the second area 32 or redundant block 323 are carried out data and reads (step S203).
If write activity, wherein at least one section of CPU (central processing unit) 1 a plurality of access sections (Sections) 21 that the temporary transient write storage unit 2 of data to be written is comprised then is to write second area 32 (step 204) with data to be written.In present embodiment, the mode that writes data is to write data in order in second area 32, that is the initial page number that at every turn writes data is the page number after last time writing data and finishing of continuing, for example: last time write the page number 3211 and 3212 of data to access section 321, when then write data next time, just the page number 3213 by access block 321 began to write data.In addition, when last page number (page number in the redundant block 323) of second area 32 when data write and finish, then continue to write data by first page number (page number 3211 of access block 321) of second area 32 again.The mode that interrelated data writes will be in following explanation.
Before writing data, CPU (central processing unit) 1 can judge whether earlier to foundation writes new data, then is the action of modification data if not, and the back explanation is held in relevant its action.Write new data if set up, judge again then whether the target page number of desiring to write has data to exist, if the existing data of this page number represents that then data quantity has surpassed the memory span of second area 32, stops write activity and warns user's (step 209).
If this page number and no data exist, then CPU (central processing unit) 1 is set at low-end trim with the interrupt request control flag 111 of its buffer 11, with closeall interrupt request action, that is CPU (central processing unit) 1 is not is not accepted the interrupt request (step S205) of other device at this moment, and begin the data in the storage unit 2 is write second area 32.
Because it is slow to write the speed of non-volatile memory 3, and the interrupt request of temporary close CPU (central processing unit) again 1, therefore will make the total system resource reduce if once all data are write non-volatile memory 3, so it is based at least one section 21 in the storage unit in non-volatility memorizer 3 that CPU (central processing unit) 1 writes data at every turn, write the target page number of data in second area 32 in batches, wherein, the size of each section 21 of storage unit 2 equals each the page number size in these blocks.
If this time writes the data action and writes data for the first time for these second area 32 format backs, then yes is write in regular turn by first page number 3211 beginnings, CPU (central processing unit) 1 and write finish after, this page number is given annotation for " in the use (using) " (step S206).
Then, CPU (central processing unit) 1 is judged whether data to be written has write and is finished, if data to be written has write and finished, then finishes this write activity.If still have many documents not write as yet, then CPU (central processing unit) 1 is opened interrupt request (interrupt request is controlled flag 111 be set at high-end trim) (step S207), to receive the interrupt request of other device, if other device there is no the request interrupt request, then CPU (central processing unit) 1 continues to write next record data (step S208), and continue repeated execution of steps S205, step S206, step S207 and step S208, write up to data and finish.
Sometimes the user can be after reading data, revise the data that it reads, the situation of data modification then takes place this moment, relevant CPU (central processing unit) 1 is revised the detailed description of data, would like to ask in the lump with reference to Fig. 1, process flow diagram and synoptic diagram that Fig. 2 b and Fig. 3 show, CPU (central processing unit) 1 with data write storage unit 2 to be written after, be to judge earlier whether target page number to be written has data to exist, wherein, target page number to be written at this indication is to continue last time to write the page number of data action, produce with the situation of avoiding the data mistake, that is, the data that desire is revised its address originally of not writing direct, but data that will be to be revised writes according to the above-mentioned data mode that writes.
If the existing data of target page number to be written exists, then stop write activity and warn user's storage space deficiency (step S214).If target page number no data to be written exists, then CPU (central processing unit) 1 is closed its interrupt request (step S210), to begin the data that writes in the target page number, CPU (central processing unit) 1 in the data that writes when this target page number is finished, and be " in the use ", and the page number annotation that the script legacy data is deposited is " not using (nouse) " (step S211) to this target page number annotation.
Afterwards, whether the data that CPU (central processing unit) 1 judgement is revised all writes is finished, and finishes if all write, and then finishes this modification data action.If still have other modification data not write second area 32 as yet, then CPU (central processing unit) 1 is opened interrupt request, to serve the device that other sends interrupt request, then begin to write the next record data in next target page number (step S213), and continue repeated execution of steps S210, step S211, step S212 and step S213, write up to the modification data and finish.
Begin to write the redundant block 323 of second area when data to be written, that is last page number of access block 321 is written into data, and write activity is must enter redundant block 323 time, to trigger a block and reclaim action (promptly beginning the action of erasing), the space of second area 32 makes for reclaiming and stores block, so that can effectively utilize.
The mechanism that recycles of relevant storage block, would like to ask in the lump the synoptic diagram and the process flow diagram that show with reference to Fig. 1, Fig. 3 and Fig. 4, because non-volatile memory 3 is or/no type flash memories, action the time is to be unit with a block so it is erased, yet, in these access blocks 321 or these redundant blocks 323, its part page number might annotation be " in the use ", other page number may annotation be " not using " then, therefore if rashly annotation is erased for the page number of " in the use ", then will produce the situation of data mistake.So,, then must carry out the following step that recycles the access space method as if reclaiming these access blocks 321 and these redundant blocks 323 effectively and not taking place under the situation of data mistake.
Carry out block erase the action before, be that first that read this second area 32 earlier stores the page number state in block, that is read each page number 3211 in first access block 321,3212,3213,3214 annotation is if the page number 3211 that reads is that annotation is " in the use ", then with the data in this page number 3211 elder generations write storage unit 2, being that the data-moving of page number of " in the use " is to the page number (step S401) of other no datat by storage unit 2 with annotation.
Then, this document (continued) in order write in the page number that continued after last time, write activity was finished, its writing mode and above-mentioned modification data mode are similar, are repeated execution of steps S402, step S403, step S404 and step S405 or step S406.When if the data in the temporary transient write storage unit 2 all write to other page number, that is each page number in this access block 321 all annotation be " not using ", then begin the action of erasing of this access block 321, and its each page number annotation is " empty (free) " (step 407) after finishing erasing.
Then, carry out next access block 322 recyclings, to the last a storage block (last redundant block 323) all is recovered processing (step 408).Therefore, all data that are written into second area 32 will closely be come together again, and reclaim these unnecessary spaces (being that annotation is these page numbers of " not using ") effectively.
Because the data in erasing nonvolatile memory storage 3 blocks needs the long time, therefore, CPU (central processing unit) 1 time is to be undertaken by the background erase mode carrying out the block action of erasing, that is CPU (central processing unit) 1 is when handling other computing or handle other action (comprise the non-volatility memorizer second area is carried out data reading-writing), simultaneously this block is erased, with the usefulness that improves native system and can reclaim these effectively and store block.
The annotation of above-mentioned page number can be set up an annotation table 4 in storage unit 2, it is to comprise a plurality of fields 41, be used for annotation do not use, use in or empty, certainly, also direct annotation in non-volatility memorizer.And whether page number in have data exist, can judge with the annotation content if judging.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (23)
1, a kind of non-volatility memorizer access system, be framework in a portable electronic devices, it is characterized in that comprising:
One non-volatile memory, it is to read and write for base conditioning unit with the byte, and erase for base conditioning unit with the block, it comprises a first area and a second area, this first area is in order to store program code, this second area is in order to the access data, this second area is to handle via a format, so that forming, each block has a plurality of page numbers, each page number has at least one byte, and these page number annotations there is one first annotation, wherein a kind of annotation of one second annotation and one the 3rd annotation makes for the data by these page numbers and this second area of annotation access thereof;
One storage unit; And
One CPU (central processing unit), it is to read and write these page numbers by this storage unit, and write data behind these page numbers to this first annotation of its annotation, wherein, when this CPU (central processing unit) is erased a block, be with the data of page number annotation in this block for this first annotation, write earlier in this storage unit, make for the page number that writes other no datat by this storage unit, and write finish after, to this this first annotation of each page number annotation that writes, and to this originally annotation be that at least one page number change annotation of this first annotation is this second annotation, make when all page numbers in this block when all annotation is this second annotation this block of then erasing, and with this erase the back block page number annotation change to the 3rd annotation, to reach a block reclaim mechanism.
2, non-volatility memorizer access system according to claim 1, it is characterized in that: when this CPU (central processing unit) is carried out erasing of this second area, be to erase by first block of these blocks, and the next block of erasing in regular turn, till last block of having erased.
3, non-volatility memorizer access system according to claim 1 is characterized in that: the second area of this non-volatile memory is that planning comprises general access section and redundant district.
4, non-volatility memorizer access system according to claim 3 is characterized in that: when this CPU (central processing unit) writes data in the page number in these redundant districts, then trigger the action of erasing.
5, non-volatility memorizer access system according to claim 3, it is characterized in that: this CPU (central processing unit) writes the data mode, be that first page number of first block by these blocks continues in regular turn and writes, after being written to last page number of last block, then continuing writes first page number of first block again.
6, non-volatility memorizer access system according to claim 5, it is characterized in that: this CPU (central processing unit) is the target page number content of judging earlier in writing in advance when writing data at every turn, if the existing data of this page number, then this CPU (central processing unit) is sent the caution message of storage space deficiency.
7, non-volatility memorizer access system according to claim 6 is characterized in that: this CPU (central processing unit) is to judge by the annotation of this target page number, and non-as if this annotation is the 3rd annotation, then sends this caution message.
8, non-volatility memorizer access system according to claim 3 is characterized in that: the quantity of the block in the block of this general access section and this redundant district is two-to-one.
9, non-volatility memorizer access system according to claim 1 is characterized in that: this CPU (central processing unit) is to erase with the background erase mode.
10, non-volatility memorizer access system according to claim 1, it is characterized in that: this CPU (central processing unit) is via at least once write data in batches and in order, and this CPU (central processing unit) is closed its interrupt request when writing data, opens its interrupt request after the data of writing is finished.
11, non-volatility memorizer access system according to claim 1, it is characterized in that: when this CPU (central processing unit) writes a modification data in a page number, this CPU (central processing unit) should the modification data continues and is written into the page number of other no datat, and write finish after, to this this first annotation of page number annotation that writes, and this is revised this second annotation of script page number annotation of data.
12, non-volatility memorizer access system according to claim 1, it is characterized in that: this CPU (central processing unit) has a buffer, and this buffer has a control flag, with by the requirement of this control flag opens interrupters or close interrupt request.
13, non-volatility memorizer access system according to claim 1, it is characterized in that: this portable electronic devices is a personal digital assistant.
14, non-volatility memorizer access system according to claim 1, it is characterized in that: this portable electronic devices is an Espresso.
15, non-volatility memorizer access system according to claim 1 is characterized in that: this non-volatile memory is the or/no type flash memory.
16, a kind of access space method that recycles of non-volatility memorizer, be to cooperate one to have when reading with byte as base conditioning unit with write activity, and is the non-volatile memory of the characteristic of base conditioning unit in when action of erasing with the block, this non-volatile memory comprises a first area and a second area, this first area is in order to store program code, this second area is in order to the access data, this second area is to make each block all have a plurality of page numbers through format, and each page number has at least one byte, wherein, these page numbers are that annotation has one first annotation, wherein a kind of annotation of one second annotation and one the 3rd annotation, make for the data by these page numbers and this second area of annotation access thereof, this method mainly comprises the steps:
One reads the annotation step, is the annotation that reads a page number of a block;
One data-moving step if the page number annotation that reads be this first annotation, then writes the data of this page number the page number of other no datat, and this first annotation of the page number annotation that after writing data this is write, and is this second annotation to page number annotation of this script; And
The one block step of erasing, if each page number of this block all annotation is this second annotation, then this block is erased, and to its page number annotation the 3rd annotation, then repeat that this reads the annotation step, this data is moved step and this block step of erasing, all erase up to these blocks of this second area and finish.
17, the access space method that recycles according to claim 16 is characterized in that: these blocks of this second area are to be planned to general access section and redundant district.
18, the access space method that recycles according to claim 16, it is characterized in that: the quantity of the block in this general access section and this redundant district is two-to-one.
19, the access space method that recycles according to claim 16 is characterized in that: in this erases the block step, be to erase with the background erase mode.
20, the access space method that recycles according to claim 16, it is characterized in that: move in the step in this data, be last time of continuing to write the page number of finishing and begin to write data, and write the fashionable interrupt request of closing in data, data is opened interrupt request after writing and finishing.
21, the access space method that recycles according to claim 16 is characterized in that: move in the step in this data, when writing data when one stores the page number of block, if this stores the existing data of page number of block, then represent this second area insufficient space.
22, the access space method that recycles according to claim 16, it is characterized in that: it is that first block by this second area begins to carry out that this reads the annotation step, this data is moved step and this block step of erasing, till the most last block of this second area is finished this block step of erasing.
23, the access space method that recycles according to claim 16, it is characterized in that: this non-volatile memory is the or/no type flash memory.
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| CNB031531873A CN100349138C (en) | 2003-08-08 | 2003-08-08 | Non-volatility memory access system and its cycling usage method of access space |
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| CNB031531873A CN100349138C (en) | 2003-08-08 | 2003-08-08 | Non-volatility memory access system and its cycling usage method of access space |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7937523B2 (en) | 2006-06-30 | 2011-05-03 | Kabushiki Kaisha Toshiba | Memory system with nonvolatile semiconductor memory |
| US8225028B2 (en) | 2008-10-28 | 2012-07-17 | Silicon Motion, Inc. | Memory devices and methods for programming flash memory utilizing spare blocks |
| WO2019001320A1 (en) * | 2017-06-27 | 2019-01-03 | 阿里巴巴集团控股有限公司 | Tracking method, device, equipment and machine readable medium |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3215237B2 (en) * | 1993-10-01 | 2001-10-02 | 富士通株式会社 | Storage device and method for writing / erasing storage device |
| JP3351595B2 (en) * | 1993-12-22 | 2002-11-25 | 株式会社日立製作所 | Semiconductor memory device |
| US5933847A (en) * | 1995-09-28 | 1999-08-03 | Canon Kabushiki Kaisha | Selecting erase method based on type of power supply for flash EEPROM |
| JP4812192B2 (en) * | 2001-07-27 | 2011-11-09 | パナソニック株式会社 | Flash memory device and method for merging data stored therein |
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2003
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7937523B2 (en) | 2006-06-30 | 2011-05-03 | Kabushiki Kaisha Toshiba | Memory system with nonvolatile semiconductor memory |
| US8225028B2 (en) | 2008-10-28 | 2012-07-17 | Silicon Motion, Inc. | Memory devices and methods for programming flash memory utilizing spare blocks |
| WO2019001320A1 (en) * | 2017-06-27 | 2019-01-03 | 阿里巴巴集团控股有限公司 | Tracking method, device, equipment and machine readable medium |
| US11507413B2 (en) | 2017-06-27 | 2022-11-22 | Alibaba Group Holding Limited | Tracking method, apparatus, device, and machine-readable medium |
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| CN100349138C (en) | 2007-11-14 |
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