CN1460884A - Reflection active matrix liquid crystal display and its making method - Google Patents

Reflection active matrix liquid crystal display and its making method Download PDF

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Publication number
CN1460884A
CN1460884A CN 03148596 CN03148596A CN1460884A CN 1460884 A CN1460884 A CN 1460884A CN 03148596 CN03148596 CN 03148596 CN 03148596 A CN03148596 A CN 03148596A CN 1460884 A CN1460884 A CN 1460884A
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China
Prior art keywords
liquid crystal
display device
otft
adopts
electrode
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CN 03148596
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Chinese (zh)
Inventor
阎东航
王刚
张坚
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Changchun Institute of Applied Chemistry of CAS
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Changchun Institute of Applied Chemistry of CAS
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Priority to CN 03148596 priority Critical patent/CN1460884A/en
Publication of CN1460884A publication Critical patent/CN1460884A/en
Pending legal-status Critical Current

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Abstract

The present invention discloses a kind of reflection-type active matrix liquid crystal display device and its production method. The switch of its pixel matrix is an organic film transistor, and the liquid crystal can be TN liquid crystal adopted in existent TFT-LCD technology, also can be photoaliquation liquid crystal or polymer covered liquid crystal.

Description

One class reflecting active matrix liquid crystal indicator and preparation method thereof
Technical field
The present invention relates to a class reflecting active matrix liquid crystal indicator (hereinafter to be referred as reflective OTFT AM-LCD), particularly the pixel switch element adopts OTFT (hereinafter referred to as OTFT).
The invention still further relates to the job operation of this display device.
Background technology
Pixel switch element in the conventional reflective liquid crystal indicator generally is with amorphous silicon (a-Si) and polysilicon (p-Si) the material active semiconductor layer as thin film transistor (TFT).The deficiency of amorphous silicon (a-Si) and polysilicon (p-Si) thin film transistor (TFT) is processing temperature and preparation cost height, is not suitable for cheapness or flexible demonstration.And OTFT adopts the thin film transistor (TFT) of high-molecular organic material as active layer.Be characterized in that material source is extensive, processing temperature is low, to the range of choice of substrate wide (as flexible substrate such as plastics).(as field-effect mobility, switch current ratio, threshold voltage) reached the level of a-Si thin film transistor (TFT) aspect device performance, can substitute the a-Si thin film transistor (TFT) in traditional LCD array fully and realize the flexibility of liquid crystal display.
Summary of the invention
The purpose of this invention is to provide class reflecting active matrix liquid crystal indicator and preparation method thereof, particularly adopting OTFT is display device of pixel switch element and preparation method thereof.Apparatus of the present invention have the advantage of compatible flexible base, board.The present invention also provides the preparation method of this display device.
The key step of the above-mentioned liquid crystal indicator of preparation provided by the invention is:
1, preparation OTFT matrix plate on glass and plastic base.Contain the pixel reflecting electrode.
The first step forms gate electrode on substrate;
In second step, on substrate and gate electrode, form gate insulation layer;
In the 3rd step, on gate insulation layer, form reflecting electrode;
In the 4th step, on gate insulation layer, form first semiconductor layer;
The 5th step, formation source/drain electrode on gate insulation layer, first semiconductor layer and reflecting electrode;
In the 6th step, on the source/drain electrode and first semiconductor layer, form second semiconductor layer;
In the 7th step, spin coating is also solidified the PI protective seam.This layer has the liquid crystal aligning inducing action concurrently.
2, the encapsulant matrix substrate with electrode base board is formed liquid crystal cell.
Involved formation method in the above steps, can adopt as Chinese invention patent: the job operation that notification number CN1372336A (calling " containing the black film organic transistor " in the following text), notification number CN1398004A (calling " sandwich type organic transistor " in the following text), notification number CN1409417A (calling " two insulated gate organic transistor " in the following text) and application number 03105024.7 (calling " contain and comprise a layer organic transistor " in the following text) patent of invention are narrated, also can adopt the job operation of other OTFT.
The invention is not restricted to monochromatic the demonstration, also can adopt to contain showing of chromatic colour Clear Filter the electrode base board realization is colored.
OTFT among the present invention at room temperature operating characteristic is that at room temperature the field causes carrier mobility 10 -3The every volt per second (cm of square centimeter 2/ Vs) more than, switch current ratio is 10 5More than, the threshold voltage absolute value is below 20 volts.
Liquid crystal can be a TN type liquid crystal of the prior art among the present invention, also can be polymkeric substance coated liquid crystal (Polymer Cell-Wall Type Liquid Crystal, PCW-LC, TadahiroAsada, Science and Technology of Polymers and Advanced Materials, Edited by P.N.Prasad et al, Plenum Press, New York, 1998.) or photic stratification liquid crystal (PES-LC, Roel Penterman et al, Nature 417,55 (2002) .).Adopt polymkeric substance coated liquid crystal can not need, under the crooked situation of display screen, can keep display effect simultaneously the polaroid on the electrode base board.On to electrode base board, need polaroid.
Embodiment
Embodiment 1
Adopt the have chance with layer of p type organic semiconducting materials CuPc/Phthalocyanine Zinc as on-off element, O-TFT device I-V transfer characteristic curve as shown in Figure 1.The field causes mobility and reaches 0.043cm 2/ Vs, switch current ratio is near 10 5With threshold voltage be-5V.Contain the requirement of 160 * 200 pixels, selector switch element O-TFT structural parameters according to the typical characteristics of above-mentioned O-TFT and 3 inches video viewing areas.Channel length is 18 μ m, and channel width is 180 μ m, and the overlapping of gate electrode and source/drain electrode is 6 μ m; The width of grid lead-in wire and signal lead is respectively 15 μ m and 12 μ m, and the storage capacitance wire widths is 30 μ m; The length of semiconductor active layer and width are respectively 40 μ m and 190 μ m.
The synoptic diagram of unit pixel sandwich construction is as shown in Figure 2: gate electrode and memory capacitance synoptic diagram such as Fig. 2 (a), semiconductor active layer synoptic diagram such as Fig. 2 (b), pixel reflects electrode and source/drain electrode synoptic diagram such as Fig. 2 (c).Its unit pixel structural entity synoptic diagram as shown in Figure 3.Said units pixel cell repeated arrangement 200 row and 160 are listed as, and have constituted the viewing area of 160 * 200 pel arrays.The grid wire widths is 95 μ m, and (pitch value) is 65 μ m at interval; The signal lead width is 182 μ m, is spaced apart 91 μ m.The array substrate circuit sketch as shown in Figure 4.
Employing contains the glass of transparency electrode or plastic base for to electrode base board, the encapsulant matrix plate with electrode base board is formed liquid crystal cell, the TN liquid crystal that the can prior art adopts, the diagrammatic cross-section of display device is seen Fig. 5 (a).Employing contains the glass of transparency electrode and polaroid or plastic base for to electrode base board, the encapsulant matrix plate with electrode base board is formed liquid crystal cell, the TN liquid crystal that the can prior art adopts, the diagrammatic cross-section of display device is seen Fig. 5 (b).
Embodiment 2
The OTFT array base palte is with embodiment 1.
Employing contains the glass of transparency electrode or plastic base for to electrode base board, the encapsulant matrix plate with electrode base board is formed liquid crystal cell, the potpourri of can prepolymer and liquid crystal is through formation polymkeric substance coated liquid crystal after the treatment with ultraviolet light.
The invention is not restricted to monochromatic the demonstration, also can adopt to contain showing of chromatic colour Clear Filter the electrode base board realization is colored.
Description of drawings
The transfer characteristic curve of accompanying drawing 1, CuPc/Phthalocyanine Zinc sandwich type OTFT.
Accompanying drawing 2, unit pixel structure multilayer synoptic diagram.
Accompanying drawing 3, unit pixel structural entity synoptic diagram
Accompanying drawing 4, array substrate circuit sketch.Wherein, 11-scanner driver, 12-signal driver.
The diagrammatic cross-section of accompanying drawing 5, display device.Wherein, 1-substrate, 2-grid, 3-reflecting electrode, 4-gate insulation layer, 5-first semiconductor layer, 6-source/drain electrode, 7-second semiconductor layer, 8-protective seam, 9-be to electrode base board, and 10-is to electrode, 11-liquid crystal, 12-polaroid.

Claims (12)

1, a class reflecting active matrix liquid crystal indicator, the on-off element that it is characterized in that driving pixel is an OTFT.
2, display device as claimed in claim 1 is characterized in that, described OTFT room temperature end causes carrier mobility 10 -3More than the every volt per second of square centimeter, switch current ratio is 10 5More than, the threshold voltage absolute value is below 20 volts.
As claim 1 and 2 described display device, it is characterized in that 3, described OTFT adopts the sandwich type organic transistor.
As claim 1 and 2 described display device, it is characterized in that 4, described OTFT adopts and contains the black film organic transistor.
As claim 1 and 2 described display device, it is characterized in that 5, described OTFT adopts and contains the protective seam organic transistor.
As claim 1 and 2 described display device, it is characterized in that 6, described OTFT adopts two insulated gate organic transistors.
7, display device as claimed in claim 1 is characterized in that, the nematic liquid crystal that liquid crystal adopts the active matrix liquid crystal display technique to use.
8, display device as claimed in claim 1 is characterized in that, liquid crystal adopts polymkeric substance coated liquid crystal.
9, display device as claimed in claim 1 is characterized in that, liquid crystal adopts photic stratification liquid crystal.
10, display device as claimed in claim 1 is characterized in that, adopts glass substrate or flexible plastic substrates.
11, display device as claimed in claim 1 is characterized in that, aperture opening ratio is greater than 50%.
12, reflective OTFT active matrix liquid crystal display apparatus as claimed in claim 11, its job operation mainly is made up of the following step:
1), preparation OTFT matrix plate on glass and plastic base.
The first step forms gate electrode on substrate;
In second step, on substrate and gate electrode, form gate insulation layer;
In the 3rd step, on gate insulation layer, form reflecting electrode;
In the 4th step, on gate insulation layer, form first semiconductor layer;
The 5th step, formation source/drain electrode on gate insulation layer, first semiconductor layer and reflecting electrode;
In the 6th step, on the source/drain electrode and first semiconductor layer, form second semiconductor layer;
The 7th step, the preparation protective seam.This layer has the liquid crystal aligning inducing action concurrently.
2), the encapsulant matrix plate with electrode base board is formed liquid crystal cell.
CN 03148596 2003-07-07 2003-07-07 Reflection active matrix liquid crystal display and its making method Pending CN1460884A (en)

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Application Number Priority Date Filing Date Title
CN 03148596 CN1460884A (en) 2003-07-07 2003-07-07 Reflection active matrix liquid crystal display and its making method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104614891A (en) * 2015-02-17 2015-05-13 深圳市华星光电技术有限公司 Reflective flexible liquid crystal display

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104614891A (en) * 2015-02-17 2015-05-13 深圳市华星光电技术有限公司 Reflective flexible liquid crystal display
WO2016131210A1 (en) * 2015-02-17 2016-08-25 深圳市华星光电技术有限公司 Reflective flexible liquid crystal display
CN104614891B (en) * 2015-02-17 2018-05-01 深圳市华星光电技术有限公司 reflective flexible liquid crystal display

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