CN1459094A - 具有独立消磁场的大磁阻传感器 - Google Patents

具有独立消磁场的大磁阻传感器 Download PDF

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Publication number
CN1459094A
CN1459094A CN01815809A CN01815809A CN1459094A CN 1459094 A CN1459094 A CN 1459094A CN 01815809 A CN01815809 A CN 01815809A CN 01815809 A CN01815809 A CN 01815809A CN 1459094 A CN1459094 A CN 1459094A
Authority
CN
China
Prior art keywords
sensor
ferromagnetic free
free layer
magnetization
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN01815809A
Other languages
English (en)
Chinese (zh)
Inventor
陈路君
J·H·朱斯蒂
J·J·弗南德兹德卡斯特罗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of CN1459094A publication Critical patent/CN1459094A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0008—Magnetic conditionning of heads, e.g. biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
CN01815809A 2000-09-19 2001-04-26 具有独立消磁场的大磁阻传感器 Pending CN1459094A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23381500P 2000-09-19 2000-09-19
US60/233,815 2000-09-19

Publications (1)

Publication Number Publication Date
CN1459094A true CN1459094A (zh) 2003-11-26

Family

ID=22878799

Family Applications (1)

Application Number Title Priority Date Filing Date
CN01815809A Pending CN1459094A (zh) 2000-09-19 2001-04-26 具有独立消磁场的大磁阻传感器

Country Status (7)

Country Link
US (1) US6914759B2 (enExample)
JP (1) JP4074192B2 (enExample)
CN (1) CN1459094A (enExample)
AU (1) AU2001255695A1 (enExample)
DE (1) DE10196646T1 (enExample)
GB (1) GB2382452A (enExample)
WO (1) WO2002025642A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101194176B (zh) * 2005-06-07 2010-09-15 Iee国际电子工程股份公司 磁场传感器
CN110741269A (zh) * 2017-10-06 2020-01-31 株式会社村田制作所 磁传感器以及电流传感器

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US7183893B2 (en) * 2004-02-04 2007-02-27 Seagate Technology Llc TMR sensor with oxidized alloy barrier layer and method for forming the same
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
US7345854B2 (en) * 2004-07-13 2008-03-18 Headway Technologies, Inc. GMR sensor having a reference layer with movable magnetization
US7369374B2 (en) * 2005-04-18 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. Current in plane magnetoresistive sensor having a contiguous hard bias layer located at back edge of stripe height
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JP2007323725A (ja) * 2006-05-31 2007-12-13 Toshiba Corp 垂直通電型磁気ヘッドおよびそれを用いた磁気ディスク装置
US7869165B2 (en) * 2007-07-30 2011-01-11 Tdk Corporation Magnetic field detecting element having stack with a plurality of free layers and side shield layers
US20090061258A1 (en) * 2007-08-30 2009-03-05 Tomohito Mizuno Cpp-type magnetoresistance effect element having characteristic free layers
US8085512B2 (en) * 2007-08-30 2011-12-27 Tdk Corporation CPP-type magnetoresistance effect element having a pair of free layers
US7826179B2 (en) * 2007-09-17 2010-11-02 Tdk Corporation Magneto-resistive effect device of the CPP structure and magnetic disk system
US7843668B2 (en) * 2007-12-27 2010-11-30 Tdk Corporation Magnetoresistive element including two ferromagnetic layers
US20090213502A1 (en) * 2008-02-25 2009-08-27 Daisuke Miyauchi Magneto-resistance effect element having stack with dual free layer and a plurality of bias magnetic layers
US8238062B2 (en) * 2009-06-25 2012-08-07 Seagate Technology Llc Magnetoresistive reader with demagnetization flux guide
KR101616046B1 (ko) * 2009-10-05 2016-04-27 삼성전자주식회사 발진기 및 그 동작방법
US20120064563A1 (en) * 2010-08-12 2012-03-15 Mahdavi Alborz Cell-based sensing systems and methods
US8531802B2 (en) * 2010-12-17 2013-09-10 Seagate Technology Llc Magnetic structure free layer stabilization
US8390963B2 (en) 2011-04-25 2013-03-05 Seagate Technology Llc Trilayer reader with current constraint at the ABS
US8749924B2 (en) 2011-09-13 2014-06-10 Seagate Technology Llc Tuned shunt ratio for magnetic sensors
US8755154B2 (en) * 2011-09-13 2014-06-17 Seagate Technology Llc Tuned angled uniaxial anisotropy in trilayer magnetic sensors
US8907666B2 (en) 2011-09-30 2014-12-09 HGST Netherlands B.V. Magnetic bias structure for magnetoresistive sensor having a scissor structure
US8837092B2 (en) 2012-06-29 2014-09-16 Seagate Technology Llc Magnetic element with biasing structure distal the air bearing surface
US8780508B2 (en) 2012-06-29 2014-07-15 Seagate Technology Llc Magnetic element with biased side shield lamination
US9142232B2 (en) * 2012-08-22 2015-09-22 Seagate Technology Llc Magnetic stack with separated contacts
US8854773B2 (en) 2012-11-28 2014-10-07 Seagate Technology Llc Side shield biasing layer separated from an air bearing surface
US9007725B1 (en) 2014-10-07 2015-04-14 Western Digital (Fremont), Llc Sensor with positive coupling between dual ferromagnetic free layer laminates
US9449621B1 (en) 2015-03-26 2016-09-20 Western Digital (Fremont), Llc Dual free layer magnetic reader having a rear bias structure having a high aspect ratio

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101194176B (zh) * 2005-06-07 2010-09-15 Iee国际电子工程股份公司 磁场传感器
CN110741269A (zh) * 2017-10-06 2020-01-31 株式会社村田制作所 磁传感器以及电流传感器

Also Published As

Publication number Publication date
GB2382452A (en) 2003-05-28
WO2002025642A1 (en) 2002-03-28
JP2004510326A (ja) 2004-04-02
DE10196646T1 (de) 2003-08-21
US20020034056A1 (en) 2002-03-21
AU2001255695A1 (en) 2002-04-02
JP4074192B2 (ja) 2008-04-09
US6914759B2 (en) 2005-07-05
GB0305441D0 (en) 2003-04-16

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C06 Publication
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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication