CN1448459A - Composition for grinding agent and making-up method thereof - Google Patents
Composition for grinding agent and making-up method thereof Download PDFInfo
- Publication number
- CN1448459A CN1448459A CN 03121218 CN03121218A CN1448459A CN 1448459 A CN1448459 A CN 1448459A CN 03121218 CN03121218 CN 03121218 CN 03121218 A CN03121218 A CN 03121218A CN 1448459 A CN1448459 A CN 1448459A
- Authority
- CN
- China
- Prior art keywords
- composition
- grinding
- polishing
- ion
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The grinding compounds of the invention character in that: form colloidal solution of concentration 1-25 wt% by silica particles which have average primary particle size 30-200 nm but are monodisperse materially, the pH value of the colloidal solution is 8.7-10.5, to use as buffer solution, and grinding compounds containing fluorin 1-100 mmol/Kg in form of fluoride or fluorine coordination anions are also contained, and the grinding compounds has little change of pH value, and clean conveniently, so it can high speed grinding stably without the reducing of the surface quality of silicon wafer and semiconductor device substrate.
Description
Technical field
The present invention relates to surface or peripheral part or surperficial modulator approach of carrying out composition for polishing and this composition for polishing of attrition process with surface behind the overlay films such as oxide film or nitrided film or peripheral part to silicon chip or semiconductor device substrate.Also relate to this composition for polishing as the silicon chip of grinding charge, the surface of semiconductor device substrate or the Ginding process that peripheral part grinds.
Background technology
In the past, repeatedly propose silicon oxide or its hydrate are dispersed into the colloidal suspension liquid, the promptly so-called composition that contains colloid silica carries out the scheme of the composition for polishing of attrition process to silicon chip or semiconductor device substrate (following brief note is a sheet etc.) with work.
For example, in No. 3170273 communiques of United States Patent (USP), have the motion of silicon solution and silica gel as abrasive.In addition, No. 4910155 communique of United States Patent (USP) disclosed and used the abrasive of the water-soluble dispersed paste of fumed silica as semiconductor-based plate insulating layer.Te Kaiping 7-221059 communique has been recorded and narrated the invention that colloid silica that the spherical silicon grain by elongated distortion constitutes has high grinding rate.The spy opens the 2001-11433 communique and has recorded and narrated by ball and be linked to be the invention that colloid silica that the silica granule of the body of many pearls constitutes has high silicon grinding rate.
On the other hand, the composition about liquid has also proposed very many schemes.No. 3328141 communiques of United States Patent (USP) have disclosed pH by making this suspension liquid in 10.5～12.5 scope, can increase grinding rate.No. 4169337 communique of United States Patent (USP) is disclosed in the invention of adding amine in the composition for polishing.Te Kaiping 2-158684 communique has disclosed by water, colloid silica, the molecular weight water-soluble polymer more than 100,000, the composition for polishing that water soluble salt constitutes.And the spy opens flat 5-154760 communique and has disclosed the silicon that uses with silicon solution or silica gel and be benchmark, and the abrasive composition that contains the piperazine (water-soluble amine a kind of) of 10～80 weight % carries out abrasive method.
More than the method for these announcements be in alkaline mother liquor, to be dispersed with in the mud and colloid silica of silicon microparticle, by adding various additives, improve abrasive dispersiveness, seek stable working ability, increase the method for process velocity, but can't satisfy now desired promptly at a high speed and the good cleaning of stable grinding rate, processing back, the nonferromagnetic substances such as flatness of abrasive surface.
Te Kaiping 11-315273 communique, spy open flat 11-302635 communique, spy and open flat 11-302634 communique and spy and open the 2000-158329 communique and disclosed: the logarithmic value of using the inverse of K is 8.0～12.0 weak acid and/or weak base, by adding weak acid and highly basic, strong acid and weak base or weak acid and weakly alkaline any one composition, colloid silica is used as buffered soln with pH shock absorption.The use of damping fluid provides the variation that has because of ambient conditions, and the variation of pH reduces, even use repeatedly, the composition for polishing that the variation of pH is also little and stable reduces grinding rate further to improve but also be expected to pH only reduced.
Particularly in recent years, be accompanied by the maximization of the highly integrated and substrate self of electronic circuit, must make silicon chip, semiconductor device substrate surface high planarization.And, in order to enhance productivity, wish to obtain the high composition for polishing of process velocity.
Summary of the invention
The inventor etc. are in view of problem that above-mentioned existing composition for polishing had, attentively studying the back finds: the colloid that will contain the silicon oxide particle of specified particle size, it is the basic solution of colloid silica, during as composition for polishing solution, shock absorption with pH, by constructing specific ionic structure, reached stable High-speed machining, thereby finished the present invention.Provide a kind of when reaching this purpose, the variation of pH is little and grinding rate is high, also can change little and stable grinding even use repeatedly, has improved the composition for polishing of the cleaning after grinding and the method for modulating this composition for polishing.
And, also provide this composition for polishing of a kind of usefulness to as the silicon chip of grinding charge, the surface of semiconductor device substrate or the Ginding process that peripheral part grinds.
Above-mentioned purpose is to reach by the composition for polishing that use has a following feature.The feature of this composition for polishing is: by average primary particle diameter is that 30～200nm, monodispersed in fact silicon oxide particle form the colloidal solution that concentration is 1～25 weight %, the pH value of above-mentioned colloidal solution is modulated between 8.7～10.5, as buffered soln with shock absorption, and, contain the fluorine 1～100mmol/Kg of fluorion or fluorine coordination anion form as one of composition.
This composition for polishing, for example, when using the high density mother liquor of 15～65 weight %, can dilute modulation with solution that comprises water, organic solvent, salt or their mixture at every turn, can be under suitable concentration, the surface or the peripheral part of silicon chip, semiconductor device substrate ground.
Embodiment
The silicon oxide microparticle is divided into two kinds of fumed silica and liquid phase method silicon oxide according to its method for making.With regard to fumed silica, how fumed silica is scattered in and forms slurry in the aqueous solvent and be used for semiconductor grinding, the size-grade distribution of this microparticle is extensive, and forms second particle by cohesion, is typical polydisperse system.The liquid phase method silicon oxide comprises water glass is added the high purity colloid silica that the moisture solution obtains as the general colloid silica of raw material with by silicoorganic compound.The colloidal solution that is used for silicon oxide microparticle of the present invention is general colloid silica and high purity colloid silica.Particularly that water glass is also fast as general colloid silica low price, the grinding rate of raw material, be fit to use.
Being used for the silicon oxide microparticle that colloidal solution of the present invention contains is that average primary particle diameter is 30～200nm, monodispersed in fact silicon oxide particle, preferably uses 40～100nm.Said herein average primary particle diameter is that the specific surface area that will measure according to nitrogen absorption BET method is converted into the spherical particle diameter.About the BET method particle diameter (specific surface area) of colloid silica at THECHEMISTRY OF SIL ICA Solubility, Polymerization, Colloid And Sur-face Properties, And Biochemistry (P344-354, RALPH K.ILER work, AWiley-Interscience Publication JOHN WILEY﹠amp; SONS P) is documented in.Calculating formula is particle diameter (nm)=2720/ specific surface area (m
2/ g).
When using average primary particle diameter less than the particle of 30nm, if when the electrolyte concentration of damping fluid composition is high, colloidal solution condenses easily, and the stability of composition for polishing reduces, and, reduced the particulate clanability of the sheet surface attachment after grinding.In addition, when using average primary particle diameter as the particle more than the 200nm, therefore abrasive sheet is not selected for use near distribution.Particularly, when recycling multi-disc and grinding, need remove by filter lapping rejects or filler, be difficult to the particle more than the 200nm is separated with bits.In addition, even in other purposes, the big particle sedimentation is difficult to guarantee the stability of lasting of goods, and price is expensive.
On such meaning, be necessary to use the monodisperse particles that is essentially single granularity that does not contain subparticle or big particle.The present invention is to measure with general colloidal particle size assay method such as electron microscope method, centrifugal settling method, laser scattering method said substantive single the dispersion.Be defined as number average particle diameter (Dn) and volume average particle size (Dv) or and the ratio (Dv/Dn) of weight average particle diameter (Dw) or (Dw/Dn) be 1.00～1.50 scope.With regard to monodispersed colloid silica, " silicon sol ", " TCSOL703 " of the chemical industry that rubs (strain) system, " the ultra-high purity colloid silica PL-7 " of Japan's chemical industry (strain) system etc. of Japanese chemical industry (strain) system are arranged more.To not in fact that monodispersed dispersed system note is made polydispersion." Syton ", " Mazin ", " Ascend " of DuPontAirProducts Nano Materials L.L.C. society etc. are arranged as polydisperse colloid silica.
The concentration of silicon oxide when actual attrition process, is that 1～25 weight % is very important; When the surface grinding of silicon chip or semiconductor device substrate, preferred scope is 3～15 weight %; When peripheral part grinds, be preferably 10～25 weight %.The concentration of the silicon oxide during grinding, when being lower than 3 weight %, attrition process speed reduces, and is impracticable.If the concentration height of silicon oxide when grinding, attrition process speed self increases, and when surpassing about 25 weight %, the pollution level of sheet increases, the clanability variation.
Below describe the present invention in detail.
Among the present invention, the pH of composition for polishing must be in 8.6～10.5 scopes.More preferably pH is in 9.5～10.5 scopes.When pH 8.6 when following, grinding rate obviously reduces, beyond usage range.And pH is 10.6 when above, and the pollution level of sheet increases, the clanability variation.And, this pH should not be vulnerable to rub, heat, contact with ambient atmos or and other the influence of variation of unexpected conditions such as composition mixing, therefore in the present invention, prerequisite as composition for polishing solution itself is, the rangeability of pH is little with respect to the variation of ambient conditions, i.e. the strong solution of shock absorption.
As the ion that forms buffered soln of the present invention, as negatively charged ion, can enumerate for example strong acid or weak acid such as boric acid, carbonic acid, phosphoric acid and water miscible organic acid such as hydrochloric acid, nitric acid, fluoric acid, sulfuric acid, also can be their mixture in addition.Be preferably carbanion or bicarbonate ion especially.As positively charged ion, both can be ammonium ions such as alkalimetal ions such as sodium, potassium, ammonium, choline, tetramethylammonium, amine ions such as Edamine, piperazine etc. show alkaline ion with the hydroxide radical pairing, also can be their mixtures.Preferred especially potassium ion or tetramethylammonium ion or their mixture.Buffered soln of the present invention is a kind ofly to be formed by above-mentioned ion population, add as acid, alkali, salt, and ion-conductance from the solution of unionized state coexistence, it is characterized in that: even sneak into a spot of acid or alkali, the variation of pH is also very little.
Fluorine 1～the 100mmol/Kg that must contain fluorion or fluorine coordination anion form as one of composition.Particularly use the such pH damping fluid of the present invention, the situation of grinding when pH is relatively lower is necessary the composition that uses this erosion action big.Fluorion both can the fluoric acid form adds, and fluorochemical form that also can above-mentioned each alkali is added.Preferred tetrafluoride borate ion and the hexafluoro silicate ion of using is as the fluorine coordination anion.Also above-mentioned substance can be added in the silicon oxide high density mother liquor of 15～65 weight %, add better when using this mother liquor dilution modulation at every turn.Fluorion or fluorine coordination anion are at the surface or the peripheral part that improve silicon chip and semiconductor device substrate, the surface after with overlay films such as oxide films, nitrided film the surface or the grinding rate of peripheral part the time, also have the effect that improves the clanability after the attrition process.When 1mmol/Kg is following, can not obtain sufficient grinding rate as the fluorine of fluorion or fluorine coordination anion form.Add more than the 100mmol/Kg, aggressiveness is strong excessively, can not obtain smooth minute surface, the clanability variation.Be preferably 3～60mmol/Kg.
In addition, usually, modulate silica concentration in advance and be 25～65% high concentration composition, the mixture diluted of water or water and organic solvent is convenient again.Can in the composition of high density, not add the above-mentioned necessary any composition except that silicon oxide earlier yet, but when dilution, add.
In order to improve the character of abrasive composition of the present invention, can use tensio-active agent, dispersion agent, sedimentation to prevent agent etc. simultaneously.Prevent agent as tensio-active agent, dispersion agent and sedimentation, can enumerate water soluble organic substance and inorganic layered compounds etc.In addition, abrasive composition of the present invention is the aqueous solution basically, but also can add organic solvent.
In Ginding process of the present invention, be suitable for using: by on upper and lower surface or certain one side, the extruding of machined objects such as sheet is placed on the milling apparatus with the rotatable platform that is attaching the abrasive cloth that is formed by synthetic resins foam, synthetic leather or non-woven fabrics etc., make above-mentioned platform and machined object two sides or wherein side rotation, and use above-mentioned composition for polishing, carry out the method for the plane lapping of above-mentioned machined object.And in the grinding of peripheral part, also be suitable for using, post the tubular Grinding structural unit of abrasive cloth on the surface or have on the milling apparatus of lap of the operating surface that is circular-arc, outer peripheral portion extruding with machined objects such as sheets, one side makes Grinding structural unit and/or the rotation of above-mentioned machined object, one side is used above-mentioned composition for polishing, and the outer peripheral portion of above-mentioned machined object is carried out abrasive method.
In plane lapping, various schemes such as single rotation mode, track type movement mode, motion of translation mode can be provided, wherein any one device can in use.
In peripheral part grinds, be suitable for using being recorded in the spy and opening flat 07-314304 communique, spy and open 2000-317788 communique, spy and drive milling apparatus in the 2002-36079 communique etc.Be preferably the perpendicular end surface and the scarp while abrasive method of the peripheral part of nearest proposition especially.And be preferably the method till the lower plane on the peripheral part that is ground to.This is restriction not, can use any one used device now.
Embodiment
Below, specify composition for polishing of the present invention and use the grinding method of this composition for polishing according to embodiment and comparative example.This is had no particular limits.
The single dispersoid silicon-dioxide that uses among the embodiment is that raw material is made with the water glass of the colloid silica of " silicon sol 40G-80 ", the average particulate diameter 120nm " silicon sol 40G-120 " of median size 15nm " silicon sol 30 ", median size 40nm " silicon sol 30G ", median size 80nm, other median size.Number average particle diameter (Dn) and volume average particle size (Dv) are to use day min-truck UPA of machine dress (strain) system to measure, and determine that its ratio (Dn)/(Dv) is in 1.00～1.50 scope.Polydispersoid silicon-dioxide is made by following method.With " silicon sol 30 " of median size 15nm, " silicon sol 30G ", " silicon sol 40G-80 ", " the silicon sol 40G-120 " of median size 120nm of median size 80nm of median size 40nm, mix with arbitrary ratio, the formation median size is that 40nm, (Dn)/(Dv) are 2.0 product.
In addition, use commercial aqueous solutions as tetramethylammonium hydroxide (following brief note is TMAH).And the above-mentioned TMAH aqueous solution and carbonic acid gas carry out neutralization reaction and make hydrogen-carbonate tetramethylammonium (following brief note is TMAHC).Making method is as follows: the 20%TMAH aqueous solution is put into the purge of gas bottle of 500ml, and the carbon dioxide gas that will be fine blister is blown into 12 hours, TMAH aqueous solution absorbing carbon dioxide gas and obtain TMAHC solution.Carry out neutralization titration with dilute hydrochloric acid, calculate the quantitative of carbonating according to titrating flex point, degree of neutralization is 97%.
Fluorine is to use the fluoric acid aqueous solution, boron hydrogen fluoride aqueous acid, the fluosilicic hydracid aqueous solution of reagent, and is same, uses Sodium Fluoride, sodium silicofluoride, the Potassium monofluoride of reagent.Carbonate uses sodium bicarbonate, the saleratus of reagent.Other sodium hydroxide is that industrial 50% aqueous solution dilution back is used.
The embodiment of the surface grinding of the silicon chip of expression embodiment 1～5 and comparative example 1～3.Use is modulated into the abrasive composition of composition as shown in table 1, carries out mirror ultrafinish processing under following grinding condition.
Milling apparatus: the SH-24 type single-sided process machine of Speedfam Co., Ltd. system
Platform revolution: 70RPM
Pressure plate revolution: 50RPM
Abrasive cloth: SUBA400 (Rodel Nitta society system)
Surface pressure: 200g/cm
2
Abrasive composition flow: 80ml/ branch
Milling time: 2 minutes
Work piece: 4 inches, have a silicon chip of the oxide film of 1200nm
Measure the pH value of abrasive composition with pH meter.And the state of detect by an unaided eye under spot light lamp haze and depression is estimated abrasive surface.And grinding rate is that the weight difference according to the silicon chip before and after grinding is converted into μ m/ and divides and try to achieve.
The result is as shown in table 1.It is big, in apparent good order and condition that embodiment 1～5 and comparative example 1～3 are compared grinding rate.
The modulator approach of the abrasive composition in embodiment 1～5 and comparative example 1～3 is as follows:
Comparative example 1～2 and embodiment 1～2: the TMAH aqueous solution after dilution, quantitatively add the mixed fluoride hydracid aqueous solution, then, add the saleratus stirring and make it dissolving.Under agitation, this additive solution is added in the colloid silica of various particle diameters, obtain the composition of table 1 at last with the pure water dilution.Comparative example 1 has used the colloid silica of median size 15nm, and comparative example 2 has used the polydispersoid silicon-dioxide made from aforesaid method.
Embodiment 3: the TMAH aqueous solution and the TMAHC aqueous solution after will diluting quantitatively mix, and quantitatively add the stirring of Sodium Fluoride and Potassium monofluoride then and make it dissolving.Then, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 1 at last with the pure water dilution.
Embodiment 4: the TMAH aqueous solution and the TMAHC aqueous solution after will diluting quantitatively mix, and quantitatively add the mixed fluoride hydracid aqueous solution then, add the saleratus stirring again and make it dissolving.Then, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 1 at last with the pure water dilution.
Comparative example 3: except that not adding the hydrogen fluoride aqueous acid, other is the same with embodiment 4, obtains the composition of table 1.
Embodiment 5: the TMAH aqueous solution and the TMAHC aqueous solution after will diluting quantitatively mix, and quantitatively add then and mix boron hydrogen fluoride aqueous acid.Under agitation, this additive solution is added in the colloid silica, obtain the composition of table 1 at last with the pure water dilution.
Expression recycles the grinding of embodiment 6 and comparative example 4 and forms the embodiment that liquid carries out the surface grinding of silicon chip.Use is modulated into the abrasive composition of forming shown in the table 2, and grinding condition is identical with embodiment 1, grinds composition liquid and recycles 10 times, carries out the grinding experiment of 10 silicon chips, measures the pH value and the grinding rate of each abrasive composition.The result is as shown in table 2.The pH of embodiment 6 compares with comparative example 4, till the cycle index to the 9 times, changes for a short time, and grinding rate is big.
The modulator approach of the abrasive composition in embodiment 6 and comparative example 4 is as follows.
Embodiment 6: the TMAH aqueous solution and the TMAHC aqueous solution of dilution are quantitatively mixed, and quantitatively add the mixed fluoride aqueous solution of hydrogen, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 2 at last with the pure water dilution.
Comparative example 4: do not add the TMAH aqueous solution and the TMAHC aqueous solution, under agitation, only Sodium Fluoride and sodium hydroxide are added in the colloid silica, obtain the composition of table 2 at last with the pure water dilution.
The embodiment to the grinding of silicon chip peripheral part of expression embodiment 7～11 and comparative example 5～7.Use is modulated into the abrasive composition of forming shown in the table 3, implements mirror ultrafinish processing with following grinding condition method.
Grinding rate: Speedfam Co., Ltd. system, EP-IV type end side processing machine
Tube rotating speed: 800RPM
Sheet rotating speed: 70 seconds/REV
Sheet revolution: 4 times/sheet
Abrasive cloth: DRP-II (Speedfam society system)
Load: 2.5Kg
Abrasive composition flow: 250ml/ branch
Work piece: 8 inches, have the silicon chip of oxide film 800nm+ silicone film 2000nm
The pH value of abrasive composition is measured with pH meter.In addition, the evaluation of abrasive surface is under spot light lamp, the state of detect by an unaided eye haze and depression.And grinding rate is that the weight difference according to the silicon chip before and after grinding is converted into mg/ and divides and try to achieve.
The result is as shown in table 3.Embodiment 7～11 compares with comparative example 5～7, and grinding rate is big, and is in apparent good order and condition.
In embodiment 7～11 and comparative example 5～7, the modulator approach of abrasive composition is as follows.
Embodiment 7: the TMAH aqueous solution after dilution quantitatively adds the mixed fluoride hydracid aqueous solution, then, adds saleratus and sodium bicarbonate, stirs and makes it dissolving.Then, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 3 at last with the pure water dilution.
Embodiment 8～9: the TMAH aqueous solution and the TMAHC aqueous solution after will diluting quantitatively mix, and quantitatively add then and mix boron hydrogen fluoride aqueous acid.Under agitation, this additive solution is added in the colloid silica, obtain the composition of table 3 at last with the pure water dilution.
Embodiment 10: the TMAH aqueous solution after dilution quantitatively adds the mixed fluoride hydracid aqueous solution, then, adds sodium bicarbonate, stirs and makes it dissolving.Then, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 3 at last with the pure water dilution.
Embodiment 11: the TMAH aqueous solution and the TMAHC aqueous solution after will diluting quantitatively mix, and quantitatively add the mixed fluoride hydracid aqueous solution then, then, add sodium silicofluoride and stir making it dissolving.Then, under agitation, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 3 at last with the pure water dilution.
Comparative example 5: single dispersoid silicon-dioxide is replaced the polydispersoid silicon-dioxide that uses aforesaid method to make, and in addition, other is the same with embodiment 10, obtains the composition of table 3.
Comparative example 6: the TMAH aqueous solution after dilution quantitatively adds the mixed fluoride hydracid aqueous solution, then, adds the sodium bicarbonate stirring and makes it dissolving.Then, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 3 at last with the pure water dilution.The pH value of said composition is 8.2.
Comparative example 7: the TMAH aqueous solution after dilution quantitatively adds the mixed fluoride hydracid aqueous solution, then, adds the sodium bicarbonate stirring and makes it dissolving, adds and mixes aqueous sodium hydroxide solution.Then, under agitation, this additive solution is added in the colloid silica, obtain the composition of table 3 at last with the pure water dilution.The pH value of said composition is 11.0.
As mentioned above, abrasive composition of the present invention is to be characterized as: by average primary particle diameter is that 30～200nm, monodispersed in fact silicon oxide particle form the colloidal solution that concentration is 1～25 weight %, the pH value of described colloidal solution is modulated between 8.7～10.5, as buffered soln with shock absorption, and as one of composition, the composition for polishing that contains the fluorine 1～100mmol/Kg of fluorion or fluorine coordination anion form, and the pH of known this composition for polishing changes little, grinding rate is fast, and clanability is good.Use abrasive composition of the present invention, can not reduce the quality of the lapped face of silicon chip, semiconductor device substrate, thereby can stably grind at a high speed.
Table 1
| Project | Comparative example 1 | Comparative example 2 | Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Comparative example 3 | Embodiment 5 | |
| Colloid silica | Average primary particle diameter (nm) | ????15 | ????40 | ????40 | ????60 | ????80 | ????40 | ????40 | ????40 |
| Size-grade distribution | The single dispersion | ????(1) | The single dispersion | The single dispersion | The single dispersion | The single dispersion | The single dispersion | The single dispersion | |
| Dv/Dn | ????1.21 | ????2.04 | ????1.26 | ????1.29 | ????1.34 | ????1.26 | ????1.26 | ????1.26 | |
| Silicon concentration (weight %) | ????10 | ????10 | ????10 | ????10 | ????10 | ????3 | ????3 | ????10 | |
| Additive | Na ion concentration (mmol/Kg) | ????0 | ????0 | ????0 | ????0 | ????4.4 | ????0 | ????0 | ????0 |
| Potassium concentration (mmol/Kg) | ????8.8 | ????8.8 | ????8.8 | ????8.8 | ????6.1 | ????3.5 | ????4 | ????0 | |
| TMA ionic concn (mmol/Kg) | ????18.5 | ????18.5 | ????18.5 | ????18.5 | ????12.3 | ????6.5 | ????3.7 | ????24.8 | |
| Carbanion total concn (mmol/Kg) (2) | ????8.8 | ????8.8 | ????8.8 | ????8.8 | ????6.4 | ????4.0 | ????4.0 | ????12.4 | |
| Fluorinion concentration (mmol/Kg is in F) | ????10.5 | ????10.5 | ????10.5 | ????10.5 | ????10.5 | ????2.6 | ????0.0 | ????5.3 | |
| The fluorion kind | ????F | ????F | ????F | ????F | ????F | ????F | Do not have | ????BF4 | |
| Evaluation of physical property | pH | ????10.3 | ????10.3 | ????10.3 | ????10.3 | ????10.4 | ????9.9 | ????9.9 | ????10.1 |
| Grinding rate (μ m/ branch) | ????0.12 | ????0.28 | ????0.24 | ????0.27 | ????0.28 | ????0.11 | ????0.06 | ????0.20 | |
| Condition of surface | The surface has particle to adhere to | The surface has particle to adhere to | Well | Well | Well | Well | Well | Well |
(1): the polydispersion of 10～120nm (non-single the dispersion);
(2): the summation of carbanion and bicarbonate ion.
Table 2
| Project | Embodiment 6 | Comparative example 4 | |||
| Colloid silica | Average primary particle diameter (nm) | 40 | ?40 | ||
| Size-grade distribution | The single dispersion | The single dispersion | |||
| Dv/Dn | 1.26 | ?1.26 | |||
| Silicon concentration (weight %) | 10 | ?10 | |||
| Additive | Na ion concentration (mmol/Kg) | 0 | ?8.2 | ||
| Potassium concentration (mmol/Kg) | 0 | ?0 | |||
| TMA ionic concn (mmol/Kg) | 28.7 | ?0 | |||
| Carbanion total concn (mmol/Kg) (1) | 12.4 | ?0 | |||
| Fluorinion concentration (mmol/Kg is in F) | 5.3 | ?5.3 | |||
| The fluorion kind | F | ?F | |||
| Estimate | pH | Grinding rate (μ m/ branch) | ?pH | Grinding rate (μ m/ branch) | |
| Cycle index | The 0th time | 10.1 | ?0.2 | ?10.1 | ?0.16 |
| The 1st time | 10.1 | ?0.19 | ?9.9 | ?0.15 | |
| The 2nd time | 10 | ?0.2 | ?9.8 | ?0.15 | |
| The 3rd time | 10 | ?0.18 | ?9.7 | ?0.14 | |
| The 4th | 10 | ?0.18 | ?9.6 | ?0.13 | |
| The 5th | 10 | ?0.19 | ?9.5 | ?0.12 | |
| The 6th time | 10 | ?0.18 | ?9.4 | ?0.11 | |
| The 7th time | 10 | ?0.18 | ?9.3 | ?0.11 | |
| The 8th time | 9.9 | ?0.19 | ?9.2 | ?0.1 | |
| The 9th time | 9.9 | ?0.18 | ?9.2 | ?0.1 | |
(1): the summation of carbanion and bicarbonate ion
Table 3
| Project | Embodiment 7 | Embodiment 8 | Embodiment 9 | Embodiment 10 | Embodiment 11 | Comparative example 5 | Comparative example 6 | Comparative example 7 | |
| Colloid silica | Average primary particle footpath (nm) | ????160 | ????120 | ????100 | ????80 | ????80 | ????40 | ????40 | ????80 |
| Size-grade distribution | The single dispersion | The single dispersion | The single dispersion | The single dispersion | The single dispersion | ????(1) | The single dispersion | The single dispersion | |
| Dv/Dn | ????1.45 | ????1.38 | ????1.38 | ????1.34 | ????1.34 | ????2.04 | ????1.26 | ????1.34 | |
| Silicon concentration (weight %) | ????18 | ????22 | ????20 | ????18 | ????18 | ????18 | ????20 | ????15 | |
| Additive | Na ion concentration (mmol/Kg) | ????2 | ????0 | ????0 | ????15.8 | ????17.4 | ????15.8 | ????4 | ????56.3 |
| Potassium concentration (mmol/Kg) | ????6.1 | ????0 | ????0 | ????0 | ????0 | ????0 | ????0 | ????0 | |
| TMA ionic concn (mmol/Kg) | ????59.9 | ????80.8 | ????57.2 | ????45.9 | ????43.2 | ????45.9 | ????10.3 | ????31.6 | |
| Carbanion total concn (mmol/Kg) (2) | ????8.06 | ????14.78 | ????13.44 | ????15.84 | ????26.21 | ????15.84 | ????4 | ????28.1 | |
| Fluorinion concentration (mmol/Kg is in F) | ?52.631579 | ??52.6315789 | ??31.578947 | ?31.578947 | ?31.5789474 | ??31.57895 | ????10.3 | ??31.57895 | |
| The fluorion kind | ????F | ????F | ????F | ????F | ????SiF6 | ????F | ????F | ????F | |
| Evaluation of physical property | pH | ????10.3 | ????10.2 | ????10.3 | ????10.4 | ????10.2 | ????10.4 | ????8.2 | ????11 |
| Grinding rate (μ M/ branch) | ????2.2 | ????2.24 | ????2.3 | ????2.2 | ????2.4 | ????2.2 | ????0.9 | ????1.7 | |
| Condition of surface | Well | Well | Well | Well | Well | The surface has ion to adhere to |
(1): the polydispersion of 10～120nm (non-single the dispersion);
(2): the summation of carbanion and bicarbonate ion.
Claims (8)
1. composition for polishing, it is characterized in that: by average primary particle diameter is that 30～200nm, monodispersed in fact silicon oxide particle form the colloidal solution that concentration is 1～25 weight %, the pH value of described colloidal solution is modulated between 8.7～10.5, as buffered soln with shock absorption, and, contain the fluorine 1～100mmol/Kg of fluorion or fluorine coordination anion form as one of composition.
2. composition for polishing as claimed in claim 1 is characterized in that: the positively charged ion that forms buffered soln is potassium ion and/or sodium ion and/or tetramethylammonium ion.
3. composition for polishing as claimed in claim 1 or 2 is characterized in that: the negatively charged ion that forms buffered soln is carbanion and/or contains bicarbonate ion.
4. as claim 1,2 or 3 described composition for polishing, it is characterized in that: sodium content is below 2mmol/Kg.
5. method that is used to modulate as the described composition for polishing of claim 1～4, it is characterized in that: form the colloidal solution that concentration is 25～65 weight % by average primary particle diameter 30～200nm, monodispersed in fact silicon oxide particle, described colloidal solution is to be modulated into the buffered soln with pH value shock absorption, and for to contain, with comprising the solution of water, organic solvent, salt or their mixture diluted liquid as the fluorion of one of composition or the fluorine 5～500mmol/Kg of fluorine coordinate anionic form.
6. a Ginding process is characterized in that: use the described composition for polishing of claim 1～4 to grind as the silicon chip of grinding charge, the surface or the peripheral part of semiconductor device substrate.
7. Ginding process, it is characterized in that: grinding charge is placed on has launched to reconcile on the platform of the abrasive cloth that leather etc. forms by synthetic resins foam or matte, one side extruding rotation, one side is supplied with the described abrasive composition of claim 1～4, and the plane of grinding charge is ground.
8. Ginding process, it is characterized in that: use to have the milling apparatus that the Grinding structural unit of abrasive cloth is posted on the surface, described Grinding structural unit is contacted with the grinding charge peripheral part, one side makes Grinding structural unit and/or grinding charge rotation, one side supplies to the peripheral part part with the described composition for polishing of claim 1～4, to being ground by the peripheral part of grind section
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002093810 | 2002-03-29 | ||
| JP2002093810A JP3754986B2 (en) | 2002-03-29 | 2002-03-29 | Abrasive composition and method for preparing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1448459A true CN1448459A (en) | 2003-10-15 |
| CN1322087C CN1322087C (en) | 2007-06-20 |
Family
ID=28786172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031212182A Expired - Fee Related CN1322087C (en) | 2002-03-29 | 2003-03-28 | Composition for grinding agent and making-up method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3754986B2 (en) |
| CN (1) | CN1322087C (en) |
| TW (1) | TW200400249A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113423799A (en) * | 2019-10-03 | 2021-09-21 | 日产化学株式会社 | Polishing composition containing cation for eliminating swelling around laser mark |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BRPI0416067A (en) * | 2003-10-29 | 2007-01-02 | Mallinckrodt Baker Inc | alkaline ash / post-plasma etching removers and photoresist stripping compositions containing metal halide corrosion inhibitors |
| DE602005000732T2 (en) * | 2004-06-25 | 2007-12-06 | Jsr Corp. | Cleaning composition for semiconductor component and method for producing a semiconductor device |
| JP4600169B2 (en) * | 2004-06-25 | 2010-12-15 | Ｊｓｒ株式会社 | Semiconductor component cleaning composition and method for manufacturing semiconductor device |
| JP2006104354A (en) * | 2004-10-06 | 2006-04-20 | Nippon Chem Ind Co Ltd | Polishing composition, method for producing the same and polishing method using the polishing composition |
| US7559825B2 (en) | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
| JP2008235481A (en) * | 2007-03-19 | 2008-10-02 | Nippon Chem Ind Co Ltd | Semiconductor wafer polishing composition, manufacturing method thereof, and polishing processing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2877440B2 (en) * | 1989-06-09 | 1999-03-31 | ナルコ ケミカル カンパニー | Colloidal silica polishing slurry |
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| JP3197575B2 (en) * | 1991-05-09 | 2001-08-13 | 株式会社吾妻商会 | Mounting method of light emitting display |
| JPH11130418A (en) * | 1997-10-29 | 1999-05-18 | Clariant Japan Kk | Method for removing sodium ion from colloidal silica |
| JPH11302635A (en) * | 1998-04-24 | 1999-11-02 | Hiroaki Tanaka | Polishing composition and method for polishing using it |
-
2002
- 2002-03-29 JP JP2002093810A patent/JP3754986B2/en not_active Expired - Fee Related
-
2003
- 2003-03-28 CN CNB031212182A patent/CN1322087C/en not_active Expired - Fee Related
- 2003-03-28 TW TW92107324A patent/TW200400249A/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113423799A (en) * | 2019-10-03 | 2021-09-21 | 日产化学株式会社 | Polishing composition containing cation for eliminating swelling around laser mark |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI306471B (en) | 2009-02-21 |
| JP3754986B2 (en) | 2006-03-15 |
| TW200400249A (en) | 2004-01-01 |
| CN1322087C (en) | 2007-06-20 |
| JP2003297778A (en) | 2003-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1075541C (en) | Polishing composition | |
| CN103620747B (en) | Composition for polishing | |
| KR100767927B1 (en) | Aqueous Dispersion for Chemical Mechanical Polishing | |
| US5264010A (en) | Compositions and methods for polishing and planarizing surfaces | |
| CN1053933C (en) | Improved compositions and methods for polishing | |
| TWI530556B (en) | Silicon polishing compositions with high rate and low defectivity | |
| CN104321850B (en) | Wafer grinding Liquid composition | |
| RU2579597C2 (en) | Composition for chemical-mechanical polishing (cmp), containing inorganic particles and polymer particles | |
| CN1809620A (en) | Coated metal oxide particles for CMP | |
| CN103189457A (en) | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices | |
| CN1295291C (en) | Polishing slurry comprising silica-coated ceria | |
| KR20050021533A (en) | Semiconductor abrasive, process for producing the same and method of polishing | |
| CN103958123A (en) | Polishing composition | |
| KR930002764B1 (en) | Abrasive composition for silicon wafer | |
| CN1322087C (en) | Composition for grinding agent and making-up method thereof | |
| CN1295292C (en) | Metal oxide powder for high precision polishing and method of preparation thereof | |
| CN1194288A (en) | Nanometer silicon dioxide polishing agent and its preparing method | |
| JP2021055041A (en) | Polishing composition and polishing method | |
| TWI808978B (en) | Silicon oxide slurry for polishing liquid composition | |
| JP4346712B2 (en) | Wafer edge polishing method | |
| US8927429B2 (en) | Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid | |
| CN112552824B (en) | Polishing composition and polishing method | |
| JP7398304B2 (en) | Polishing composition, polishing method, and semiconductor substrate manufacturing method | |
| CN1919949A (en) | High precision composite polishing liquid, preparation method and use thereof | |
| JP4291665B2 (en) | Abrasive composition for siliceous material and polishing method using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070620 Termination date: 20160328 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |