CN1444072A - Electrooptical device and mfg. method electronic apparatus - Google Patents
Electrooptical device and mfg. method electronic apparatus Download PDFInfo
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- CN1444072A CN1444072A CN03104952A CN03104952A CN1444072A CN 1444072 A CN1444072 A CN 1444072A CN 03104952 A CN03104952 A CN 03104952A CN 03104952 A CN03104952 A CN 03104952A CN 1444072 A CN1444072 A CN 1444072A
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a liquid crystal device having a structure in which electrical conduction between substrates is maintained and the cell gap can be easily controlled. A liquid crystal device of the present invention can include a TFT array substrate and a counter substrate facing each other, and a liquid crystal is interposed between the substrates. A conductive layer is applied to a protrusion provided on the counter substrate to form an intersubstrate conductive part. By placing the intersubstrate conductive part inside a sealant, stable electrical conduction between the TFT array substrate and the counter substrate can be performed, and a predetermined cell gap is maintained.
Description
Technical field
The present invention relates to electro-optical device and manufacture method thereof, electronic equipment, particularly relate to and be suitable for the base plate structure that in substrate distance and the control that conducts, uses.
Background technology
Figure 13 shows an example of existing liquid crystal indicator.Constituting of liquid crystal panel 100: the arranged spaced with regulation forms many data lines and sweep trace 101 latticedly, dispose simultaneously rectangularly pixel capacitors, by the thin film transistor (TFT) that drives this pixel capacitors (below, abbreviate TFT as) device substrate 102 (tft array substrate) of the on-off element that constitutes etc. and dispose the subtend substrate 104 of counter electrode 103.Device substrate 102 and subtend substrate 104 make electrode forming surface opposite to one another like that, paste with sealant 105.Enclosed liquid crystal 106 in the zone between the substrate that is divided into the district with sealing agent 105, simultaneously, also disposed liner 107, the interval between substrate 102 and the substrate 104 keeps the size of regulation.Liquid crystal on the electrode forming surface of device substrate 102 is enclosed outside the district, be formed with common electrode 108, this common electrode 108 is provided with the turning part 109 that is made of silver paste, and by means of this, 104 of device substrate 102 and subtend substrates just can form and conduct as a result.In addition, in the outside of device substrate 102, subtend substrate 104 side, also be pasted with polarization plate 110 respectively.
In addition, though diagram has been omitted, but, on the device substrate 102 from the terminal part that subtend substrate 104 is stretched, be equipped with the data line driving IC that supplies with data-signal to each data line, simultaneously, also be equipped with the IC that uses to the scanning line driving of each sweep trace 101 supply sweep signals.
In addition, in the case of this example, in lower surface one side of device substrate 102, the padded coaming 112 by silicon rubber etc. is provided with backlight unit 111.This backlight unit 111, the light that is produced by this fluorescent tube 113 by the fluorescent tube 113 of the wire of irradiates light, reflection is to lead reflecting plate 115 toward light guide plate 114, to make and led toward the light of light guide plate 114 equably to the diffuser plate 116 of liquid crystal panel 100 diffusions, make from the light of light guide plate 114 to the direction outgoing opposite with liquid crystal panel 100 and constitute to the reflecting plate 115 of liquid crystal panel 110 1 lateral reflections.
Want to make such liquid crystal indicator, at first, in device substrate 102 and subtend substrate 104 tops, technology with photoetching etc., on each substrate, formed after the necessary electrode layer and drive circuit layer, for example, on the electrode forming surface of device substrate 102, scattered and be used for making 2 constant liners 107 of substrate distance maintenance, simultaneously, form on the electrode forming surface of subtend substrate 104 with silk screen process printing etc. and be used for the sealant 105 of encapsulated liquid crystals.
Secondly, adopt device substrate 102 and subtend substrate 104 are pasted, in the gap of opening portion between 2 substrates of sealant 105, inject liquid crystal 106, with sealant 105 this opening portion is sealed then, polarization plate is pasted way on the two sides, finish liquid crystal panel 100.
At last, this liquid crystal panel 100 is installed backlight units, various driving with substrate etc., be put in the housing, just finished liquid crystal indicator.
Be used for realizing the turning part that conducts 109 between upper and lower base plate, conductive paste sclerosis back is formed.This conductive paste is a kind of cream that mix to stir advances the electric conductivity good metal powder of silver powder for example etc. or the filling material of electric conductivity etc. in resin.When forming turning part 109, for example can utilize dripping device with divider etc., on the assigned position of the electrode forming surface top of device substrate 102, drip after the conductive paste of ormal weight, make the method for hardening of resin etc. with the suitable means of heating or rayed etc.
Such turning part 109 at the reverse side that can make at an easy rate, exists such problem: exist restriction aspect the precision on locational precision when conductive paste drips and the amount.In addition, with the cream exit point that divider carries out, the result becomes to for example occupying the area about 0.5mm * 0.5mm edge, exists the problem of the narrow architraveization that is not suitable for liquid-crystal apparatus in the last few years.In addition, depend on the state that drips of conductive paste and its curing condition etc., formed turning part 109 is to the sticking density of the pressure of substrate or press tacky area to change, thereby exists the inconstant problem of its resistance value.In addition, because conductive paste is exposed in the outer gas,, exist the bad problem of its against weather so also can change on timeliness ground owing to this its resistance value.
As the method that solves such problem, people have proposed directly to be dispersed in the conducting particles that has been covered with metal film on the resin particle surface or metallics etc. in sealant, make it the scheme as the formation of conducting portion.But, under the situation of such formation, the resistance value of turning part will depend on not only that also the aggegation of conducting particles or metallics changes with its dispersiveness, and also change with the conductivity of the sticking density turning part of the pressure between sealant and substrate, exist the shortage reliability problems.
Summary of the invention
The present invention invents for solving above-mentioned problem, and its purpose is to provide the electro-optical device and the manufacture method thereof of turning part between the substrate that conducts that has between the substrate that can stably keep electro-optical device and uses the electronic equipment of this electro-optical device.
To achieve these goals, electro-optical device of the present invention, it is a kind of electro-optical device that between a pair of substrate opposite to one another, constitutes that electrooptical material is seized on both sides by the arms, it is characterized in that: on each the substrate inner face that constitutes above-mentioned a pair of substrate, current-carrying part is set, simultaneously, turning part between the substrate that is made of the protuberance that is covered with conductive layer is set on the side in above-mentioned a pair of substrate, the current-carrying part of above-mentioned each substrate is electrically connected to each other by turning part between aforesaid substrate.Said here ' being arranged on the current-carrying part on the inner face of each substrate ' is the part that contains electrode or wiring.
If adopt such formation of the present invention, then can be by means of conducting between the current-carrying part that positively keeps each substrate at the conductive layer that reliability is good aspect its conductivity.In addition, owing to can keep condition of contact between conductive layer and the substrate consistently,, can between substrate, positively keep stable conducting so can eliminate electrical specification irregular of resistance value that the variation by condition of contact causes etc.
In addition, electro-optical device of the present invention, it is a kind of electro-optical device that between a pair of substrate opposite to one another, constitutes that electrooptical material is seized on both sides by the arms, it is characterized in that: on the inner face of each substrate that constitutes above-mentioned a pair of substrate, current-carrying part is set, simultaneously, being provided with between the above-mentioned a pair of substrate of maintenance on side's substrate in above-mentioned a pair of substrate is the protuberance at the interval of regulation, and the turning part is electrically connected the current-carrying part of above-mentioned each substrate to each other between the substrate that constitutes on the raised part by conductive layer is layed onto.
If adopt such formation of the present invention, then not only can be really and stably keep conducting between the current-carrying part of each substrate, can also make substrate distance keep the value of regulation by means of the thickness sum of the height and the conductive layer of raised part.
That is, be 2 gaps between substrate owing to can become inevitably,, so just can easily carry out the control in gap if in advance the height of giving protuberance is added that value behind the thickness of conductive layer is adjusted into the value as the regulation of distance between substrate.That is, adopt the way make turning part between substrate of the present invention have the effect of existing liner concurrently, just also can reasonably carry out the clearance control of 2 substrates.
The protuberance that it is desirable to turning part between aforesaid substrate is made of 1 layer of the substrate that constitutes an above-mentioned side or the membrane material of multilayer.
If adopt this formation, just there is no need to prepare especially the member different when then on substrate, forming protuberance with substrate, cost is increased.In addition, owing to can form protuberance, can adopt the way formation of common fabrication process condition being carried out some changes with the membrane material of composed component substrate or subtend substrate.
It is desirable to raised part for example is made of the resin material of polypropylene screen, polyimide film and so on.If constitute protuberance, then can utilize photoetching technique etc. easily to form the protuberance of desirable shape with desirable thickness in the substrate top with these resins with photosensitive thermmohardening type.
The conductive layer of turning part between aforesaid substrate it is desirable to be made of metal film.If the employing metal film then can obtain further stable electric conductivity, can make the electrical specification between substrate stable.In addition, metal film can simply and at an easy rate be layed onto on the protuberance surface with the thickness of stipulating by means of all masking techniques, has benefited from this, can realize the cost degradation of electro-optical device.
In addition, the conductive layer of turning part between aforesaid substrate it is desirable to be made of transparent and electrically conductive film.In addition, adopt protuberance is also done to become the part of transparent component simultaneously, no matter then be turning part between the substrate that forms this formation on any zone of electro-optical device, the light transmission rate of electro-optical device can not reduce yet.In addition,, when on substrate, forming transparency electrode, the conductive layer of turning part between substrate can also be formed simultaneously, the simplification of manufacturing process can be realized if adopt such formation.
Can use liquid crystal as above-mentioned electrooptical material.
If adopt this formation, then can stably keep conducting between each substrate, and, can realize the liquid crystal indicator in certain control module gap.
Also only on the overseas peripheral part of the image displaying area in each substrate turning part between aforesaid substrate is set.As formation, then in the image displaying area territory, i.e. the formation of pixel area and existingly do not change fully, so the degree of freedom of having guaranteed the pixel graphics design with existing same outside, can also keep conducting reliably between substrate.
In addition, also conducting portion between aforesaid substrate can be located at the inside of the sealant part of encapsulated liquid crystals.
Have benefited from doing to become such formation, just can be closely bonded to turning part between substrate on the substrate more securely, not only can keep conducting more stably, can also improve its physical strength.In addition, the turning part becomes and is the structure that protects with hermetic unit between substrate, owing to can not contact outer gas, so can reduce the variation etc. of the resistance value that causes because of the oxidation of conductive layer etc., can become and is the good electro-optical device of against weather.In addition, if adopt this formation, then can also realize the narrow architraveization of electro-optical device and need not set the turning part on the overseas limit of the image displaying area of electro-optical device and form the space.
If adopt this formation, because the turning part plays a part the liner of sealant inside between aforesaid substrate, to not make it to be blended into the inside of sealant or the liner in the electrooptical material so can want in the past, have benefited from this, also can carry out the simplification of manufacturing process.
The manufacture method of electro-optical device of the present invention, be a kind of electrooptical material to be seized on both sides by the arms the manufacture method of the electro-optical device that constitutes between a pair of substrate opposite to one another, it is characterized in that having following operation: the operation that protuberance is set on the substrate of the side in above-mentioned a pair of substrate; Forming conductive layer on this protuberance to form the operation of turning part between substrate.
If adopt this method, because the result becomes to after having formed protuberance on the assigned position, on the surface of this protuberance, positively form the conductive layer that conductivity can not change because of formation condition, so can form turning part between the substrate that always has constant conductivity with correct electrical specification on the desirable position.
In addition, if adopt this method, then can remove the operation that conductive paste is dripped or harden, become to can only carrying out all manufacturing processes, thereby also can realize the reduction of the cost brought owing to the simplification of manufacturing process and manufacturing machine with masking technique.
The manufacture method of electro-optical device of the present invention is characterized in that: the protuberance of turning part between one-body molded aforesaid substrate when the moulding of aforesaid substrate.
If adopt this method, then do not need newly to be provided with the operation that forms turning part between aforesaid substrate.
The manufacture method of electro-optical device of the present invention is characterized in that: the protuberance that forms turning part between aforesaid substrate with photoetching technique.
If adopt this method, not only can easily form the protuberance of desired shape in the substrate top with desirable thickness, the way of the some technology changes when adopting the element that for example forms other on substrate etc. just can easily form turning part between substrate.
Electronic equipment of the present invention is characterized in that: the electro-optical device that possesses the invention described above.
If adopt the present invention, then can realize possessing the electronic equipment that shows display part of high grade owing to the electro-optical device that possesses the invention described above.
Description of drawings
Fig. 1 is the equivalent circuit diagram that constitutes various elements in a plurality of pixels in image displaying area territory of liquid-crystal apparatus of embodiment of the present invention 1, wiring etc.
Fig. 2 is the planimetric map of the adjacent a plurality of pixel clusters in the tft array substrate of the same liquid-crystal apparatus.
Fig. 3 is the planimetric map of the subtend substrate of the same liquid-crystal apparatus.
Fig. 4 is the sectional view along the A-A ' line of Fig. 2 and Fig. 3.
Fig. 5 is the process profile of manufacturing process that is used for illustrating the tft array substrate of the same liquid-crystal apparatus.
The integral body that the planimetric map of Fig. 6 shows the same liquid-crystal apparatus constitutes.
Fig. 7 is the sectional view along the B-B ' line of Fig. 6.
The integral body that the planimetric map of Fig. 8 shows the liquid-crystal apparatus of embodiment of the present invention 2 constitutes.
Fig. 9 is the sectional view along the C-C ' line of Fig. 8.
The stereographic map of Figure 10 has illustrated an example of the electronic equipment that uses liquid-crystal apparatus of the present invention.
The stereographic map of Figure 11 has illustrated another example of the electronic equipment that uses liquid-crystal apparatus of the present invention.
The stereographic map of Figure 12 has illustrated another example of the electronic equipment that uses liquid-crystal apparatus of the present invention.
The sectional view of Figure 13 has illustrated an example of existing liquid crystal indicator.
Label declaration
7 tft array substrates
13 transparency carriers
14 transparency carriers
15 subtend substrates
16 liquid crystal
24 counter electrodes
28 sealants
Conducting portion between 34 substrates
50 protuberances
51 conductive layers
60 common electrodes
Embodiment
The formation of the liquid-crystal apparatus of embodiment 1
Below, to Fig. 7 embodiment of the present invention 1 are described referring to Fig. 1.
Fig. 1 is the equivalent circuit diagram that constitutes various elements in a plurality of pixels in image displaying area territory of liquid-crystal apparatus of embodiment of the present invention, wiring etc.Fig. 2 is the planimetric map that has formed the adjacent a plurality of pixels in the tft array substrate of data line, sweep trace, pixel capacitors etc.Fig. 3 is the planimetric map that has formed the subtend substrate of color filter.Fig. 4 is the sectional view along the A-A ' line of Fig. 2 and Fig. 3.Fig. 5 is the process profile that is used for illustrating the manufacturing process of tft array substrate.The integral body that the planimetric map of Fig. 6 shows liquid-crystal apparatus constitutes.
In addition, in above accompanying drawing,, in each layer or each member, all make the engineer's scale of planar dimension or thickness etc. different aptly for each layer or each member being made to become the size of the sort of degree that can discern in the drawing top.
The formation of the major part of liquid-crystal apparatus
As shown in Figure 1, in the liquid-crystal apparatus of the present embodiment, constitute a plurality of pixels that form of visual viewing area rectangularly, be formed with a plurality of pixel capacitors 1 and the TFT2 that is used for controlling this pixel capacitors 1, the data line 3 of supplying with picture intelligence has been electrically connected on the source region of corresponding TFT2 rectangularly.Be written to pixel signal S1, S2 on the data line 3 ..., Sn, both can supply with according to line according to this order, also can supply with 3 groupings of many adjacent data lines.In addition, be constructed such that sweep trace 4 is electrically connected on the grid of TFT2, and with predetermined timing, according to sweep signal G1, G2 ..., Gm order, add sweep signal according to line with giving sweep trace 4 pulseds.Pixel capacitors 1 has been electrically connected in the drain electrode of TFT2, adopts the TFT2 make as on-off element just to become way for the ON state in only during constant, with predetermined timing, write picture intelligence S1, S2 from data line 3 supplies ..., Sn.
Resemble in this wise by pixel capacitors 1 be written to the specified level of liquid crystal picture intelligence S1, S2 ..., Sn, and the subtend substrate that will tell about of back between the counter electrode that forms, can keep constant during.Here, the purpose that the picture intelligence that keeps for preventing is sewed, the liquid crystal capacitance affix memory capacitance in parallel part 5 that sometimes will and between pixel capacitors 1 and counter electrode, form.Label 6 is the electric capacity lines that constitute the upper electrode of memory capacitance part 5.
As shown in Figure 2, on the tft array substrate 7 of a side's who constitutes liquid-crystal apparatus substrate, dispose a plurality of pixel capacitors 1 (dotting profile) rectangularly, limit along the paper longitudinal extension of pixel capacitors 1 is provided with data line 3 (representing profile with 2 chain line), is provided with sweep trace 4 and electric capacity line 6 (all representing profile with solid line) along the limit of paper horizontal expansion.At above-mentioned liquid-crystal apparatus is under the situation of transmissive liquid crystal device, and above-mentioned pixel capacitors 1 can use nesa coating such as indium tin oxide (below, abbreviate ITO as) to form.In addition, be under the situation of reflection type liquid crystal device at above-mentioned liquid-crystal apparatus, above-mentioned pixel capacitors 1 can be formed by aluminium metallic films such as (Al).In addition, above-mentioned liquid-crystal apparatus is the occasion of transflective liquid crystal device, and 1 of above-mentioned pixel capacitors can form with the stack membrane of for example nesa coating and metallic film.In the present embodiment, the semiconductor layer 8 (representing profile) that constitutes by polysilicon film with 1 chain line.Be formed the U-shaped shape near the point of crossing of data line 3 and sweep trace 4, the end of this U-shaped shape part 8a prolongs along the direction (paper right) of adjacent data line 3 and the direction (direction on the paper) of this data line 3.On the two ends of the U-shaped shape part 8a of semiconductor layer 8, be formed with contact hole 9,10, one side's contact hole 9, become the source electrode contact hole that is electrically connected for the source area of data line 3 and semiconductor layer 8,10 of the opposing party's contact holes become the drain contact hole that is electrically connected for the drain region with drain electrode 11 (representing profile with 2 chain line) and semiconductor layer 8.Be provided with drain electrode 11 on the end of the opposite side of a side of drain contact hole 10 on, be formed with and be used for pixel contact hole 12 that drain electrode 11 and pixel capacitors 1 are electrically connected.
The TFT2 of the present embodiment, because the U-shaped shape part 8a of semiconductor layer 8 intersects with sweep trace 4, the result becomes to semiconductor layer 8 and sweep trace 4 carry out 2 times intersects, so be formed in the TFT that there are 2 grids a semiconductor layer top, promptly constitutes so-called double gated TFT.In addition, electric capacity line 6 is extended to making is applied in paper arranged picture in a lateral direction along sweep trace 4, and simultaneously, a part of 6a of branch then extends on the paper longitudinal direction along data line 3.So, just can form memory capacitance part 5 with the semiconductor layer 8 and the electric capacity line 6 that all prolong along data line 3.
On the other hand, as shown in Figure 3, on subtend substrate 15, corresponding with each pixel area of tft array substrate 7 being provided with respectively and the R (red), the G (green) that constitute color filter, the color material layer 22 that this 3 primary colors of B (indigo plant) is corresponding is provided with the 1st photomask 21 (black matrix") of latticed ground shading on the boundary member of these color material layers 22.
The liquid-crystal apparatus of the present embodiment, as shown in Figure 4, have a pair of transparency carrier 13,14, possess the tft array substrate 7 of the substrate that constitutes one side, constitute the subtend substrate 15 of the opposing party's of subtend configuration substrate with it, seized liquid crystal 16 on both sides by the arms 7,15 of these substrates.Transparency carrier 13,14 for example is made of glass substrate or quartz base plate.
As shown in Figure 4, underlying insulation film 17 is set on tft array substrate 7, in underlying insulation film 17 tops, the for example semiconductor layer 8 of the polysilicon film formation of thickness about 30 to 100nm is set, to cover this semiconductor layer 8 formulas ground at the insulation film 18 that forms the formation gate insulating film of thickness about 30 to 150nm on whole.The TFT2 that each pixel capacitors 1 is carried out switch control is set in underlying insulation film 17 tops.TFT2 possesses sweep trace 4 that the metal by tantalum or aluminium etc. constitutes, by means of the channel region 8c that forms the semiconductor layer 8 of raceway groove from the electric field of this sweep trace 4, constitute the insulation film 18 of the gate insulating film that makes sweep trace 4 and semiconductor layer 8 insulation, the data line 3 (in Fig. 4, not drawing) that constitutes by the metal of aluminium etc., the source area 8b and the drain region 8d of semiconductor layer 8.
In addition, comprise on the sweep trace 4 and insulation film 18 on tft array substrate 7 on, form the source electrode contact hole 9 that has led to source area 8b with having formed respectively, lead to the 1st interlayer dielectric 19 of the drain contact hole 10 (in Fig. 4, all not drawing) of drain region 8d.That is, data line 3 is electrically connected on the source area 8b of semiconductor layer 8 by the source electrode contact hole 9 that connects the 1st interlayer dielectric 19.
In addition, on the 1st interlayer dielectric 19, form by with data line 3 with the drain electrode 11 that the metal of one deck constitutes, form the 2nd interlayer dielectric 20 that has formed the pixel contact hole 12 (in Fig. 4, not drawing) that leads to drain electrode 11.That is, pixel capacitors 1 is electrically connected by the drain region 8d of drain electrode 11 with semiconductor layer 8.
The side of TFT2 in Fig. 4 forms memory capacitance part 5.In this part, in transparency carrier 13 tops underlying insulation film 17 is set, at the semiconductor layer of having mixed into impurity 8 of underlying insulation film 17 tops setting, on whole, form insulation film 18 and make 8 linings of this semiconductor layer are got up with semiconductor layer 8 one of TFT2.In insulation film 18 tops, form by with sweep trace 4 with the electric capacity line 6 that the metal of one deck constitutes, make electric capacity line 6 linings formation the 1st interlayer dielectric 19 on whole like that gets up.
In addition, the 2nd interlayer dielectric 20 can be used as planarization film, for example, this a kind of polypropylene screen as the high resin molding of flatness is formed about about 2 microns thickness.On the surface of the 2nd interlayer dielectric 20, form pixel capacitors 1, in addition, be provided with the alignment films 25 that polyimide etc. constitutes with liquid crystal 16 face in succession of the superiors of tft array substrate 7.
On the other hand,, on transparency carrier 14, for example form the 1st photomask 21 that constitutes by the metal film of chromium etc., resin black photoresist etc.,, form color material layer 22 in the 1st photomask 21 tops in subtend substrate 15 1 sides.Then, on whole of substrate, form the counter electrode 24, the alignment films 26 that constitute with the same nesa coating of pixel capacitors 1 successively by ITO etc.
The manufacturing process of liquid-crystal apparatus
Secondly, with Fig. 5 the manufacturing process of the liquid-crystal apparatus of above-mentioned formation is described.
The process profile of Fig. 5 shows the manufacturing process of tft array substrate 7.
At first, shown in the operation (1) of Fig. 5, form underlying insulation film 17, the unbodied silicon layer of lamination above that in transparency carrier 13 tops of glass substrate etc.Then, adopt, implement the way of the heat treated of for example laser annealing processing etc., amorphous si-layer is recrystallized, for example form thickness 30 to the crystalline polysilicon layer 23 in the 100nm left and right sides to this amorphous si-layer.
Secondly, shown in the operation (2) of Fig. 5, formed polysilicon layer 23 is patterned into the feasible figure that becomes to above-mentioned semiconductor layer 8, forms the insulation film 18 that for example becomes to the gate insulating film of thickness about 30 to 150nm above that.
Then, at photoresist with polyimide etc., to in the viewing area, should become to the zone beyond the zone of the lower electrode of coupling part between TFT2 and the memory capacitance 5 and memory capacitance 5 and form after the mask, for example, in polysilicon layer, mix PH3/H2 ion by insulation film as the alms giver.At this moment ion implanting conditions, for example,
31The ion dose of P is 3 * 10
14To 5 * 10
14Ion/cm
2About, acceleration can then need about 80keV.
Secondly, after peeling off above-mentioned photoresist, shown in the operation (3) of Fig. 5, form sweep trace 4 and electric capacity line 6 in insulation film 18 tops.The formation of this sweep trace 4 is adopted after the metal of tantalum or aluminium etc. in sputter or vacuum evaporation, forms the photoresist figure of these sweep trace 4 grades, and the etching that to carry out with this photoresist figure be mask is carried out the stripping photolithography glue pattern.Then, after the formation of this sweep trace 4 and electric capacity line 6, after the photoresist figure that has formed lining memory capacitance part 5, inject the PH3/H2 ion.At this moment ion implanting conditions, for example,
31The ion dose of P is 5 * 10
14To 7 * 10
14Ion/cm
2About, acceleration can then be about 80keV.By means of above operation (3), just can form source area 8b and the drain region 8d of TFT2.
Secondly, after peeling off the photoresist figure, shown in the operation (4) of Fig. 5, lamination the 1st interlayer dielectric 19, then, on the position that will become, form opening to source electrode contact hole 9 and drain contact hole 10 (in Fig. 5, all not drawing), then, adopt the metal of sputter or AM aluminum metallization etc., form the photoresist figure of the shape of composition data line 3 and drain electrode 11, with be the way that mask carries out etching, form data line 3 (not drawing) and drain electrode 11.Then, lamination the 2nd interlayer dielectric 20 forms opening on the position that will become pixel contact hole 12.
Then, shown in the operation (5) of Fig. 5, above that behind the transparent conducting film by ITO etc. of film forming thickness about about 50 to 200nm, make it graphically to form pixel capacitors 1, last, on whole, form alignment films 25.By means of above operation, finish the tft array substrate 7 of the present embodiment.Above explanation, though be the explanation of carrying out according to the operation under the situation of transmissive liquid crystal device, but, under the situation of reflection type liquid crystal device, above-mentioned pixel capacitors 1 can use the metallic film of aluminium (Al) etc. to form, under the situation of transflective liquid crystal device, above-mentioned pixel capacitors 1, for example can nesa coating and metallic film between stack membrane form.
On the other hand, though the illustration for subtend substrate 15 process charts shown in Figure 4 is omitted, but, at first prepare the transparency carrier 14 of glass substrate etc., in sputter for example after the crome metal, form the 1st photomask 21 and as the 2nd photomask 29 (referring to Fig. 6) of architrave described later through photo-mask process, etching procedure.In addition, these photomasks 21,29 are removed outside the metal material of Cr (chromium), Ni (nickel), Al (aluminium) etc., also can be with the material that charcoal or Ti is distributed to resin black in the photoresist etc.
Secondly, form after the color material layer 22 that will become with well-known method such as decoration method, pigment dispersing method, print process to color filter, the way by the transparent conducting film of ITO etc. of the thickness of deposit about 50 to 200nm is gone up in employing to whole of subtend substrate 15 with sputtering method etc., form counter electrode 24.
In addition, adopt after being coated with the organic resin material that applies the about 3 microns acrylic resin of thickness, polyimide resin etc., make it patterned way, form protuberance 50 with whirl coating etc.Then, on the surface of protuberance 50, be covered with conductive layer 51 (referring to Fig. 6 and Fig. 7 of back explanation) become to substrate between after the turning part 34, on whole of counter electrode 24, form alignment films 26.Because such protuberance 50 can form by means of the way of the coating of the organic material of the acrylic resin that carries out on subtend substrate 15 etc., just can form fully so only make common manufacturing process carry out some changes.
In addition, protuberance 50 also can moulding integratedly when the moulding of transparency carrier 14, owing to this, can realize the simplification of manufacturing process.In addition, constituting with the inorganic material of silicon oxide layer or silicon nitride film etc. under the situation of protuberance 50, adopting the way of utilizing the masking technique that in semiconductor manufacturing process, will use in general etc. just can be easily and correctly make the protuberance of desirable thickness with desired shape.In addition, also can get up to make this protuberance 50 to a plurality of membrane material laminations as required.
The turning part 34 between substrate, it is the part that conducts that keeps between tft array substrate 7 and the subtend substrate 15, employing make it be arranged on tft array substrate 7 on the way that contacts of common electrode 60 (referring to Fig. 6 and Fig. 7), counter electrode 24 and common electrode 60 are electrically connected.Common electrode 60, make and to add voltage accordingly with input signal, no matter so that to counter electrode 24 do not have postpone and also in what part of subtend substrate 15, all become for homogeneous like that, at least will be in tft array substrate 7 tops more than one local the setting, and connect with shared wiring 61 60 of each common electrodes.The constituent material of the turning part 51 of turning part 34 between substrate, so long as have the material of electric conductivity, the restriction that just has nothing special, desilver, copper, nickel, aluminium etc., material outside, also can constitute with the transparent and electrically conductive film of ITO etc.Such conductive layer 51 can easily form on the surface of protuberance 50 with the various masking techniques of vacuum vapour deposition etc.In addition, at this moment, adopt with the way that applies etc. on the substrate surface part beyond the protuberance 50 that will form conductive layer 51, coating photoresist material etc. forms mask, after conductive layer 51 forms, removes mask material and gets final product.
Adopt the total a+b+c of the thickness c of the thickness b of the height a of protuberance 50, conductive layer 51 and common electrode 60, in other words, the aggregate value apart from the thickness of the height of substrate and common electrode 60 of turning part between substrate 34, be set at and the substrate of liquid-crystal apparatus between equidistant way, the result just becomes to turning part 34 between this substrate has makes cell gap keep constant function, thereby can be used as liner.For example, be 3.4 microns at cell gap, the thickness of common electrode is 0.2 micron, the height of protuberance is under 3 microns the situation, the thickness of conductive layer is become be 0.2 micron to get final product.
In addition, though between substrate turning part 34 set the number restriction that has nothing special, if consider more homogeneous and response rapidly, then it is desirable on each corner part of image display portion, all set more than one.
At last, as mentioned above, make the tft array substrate 7 that formed each layer and the configuration of subtend substrate 15 subtends, and paste, make blank panel with sealant.Then, if in blank panel, enclose liquid crystal 16, but the liquid-crystal apparatus of manufacturing cost embodiment just.
The integral body of liquid-crystal apparatus constitutes
Secondly, with Fig. 6 the integral body formation of liquid-crystal apparatus 40 is described.
In Fig. 6, in the top of tft array substrate 7, sealant 28 is set along its edge, side is provided as the 2nd photomask 29 of architrave concurrently within it.On the zone in the outside of sealant 28, one side along tft array substrate 7 data line drive circuit 30 and external connection terminals 31 be set, one side scan line drive circuit 32 is set along 2 limits adjacent with this.If do not become problem for the scanning signal delay toward sweep trace 4, self-evident scan line drive circuit 32 also can be only in one-sided setting.In addition, also can be with the both sides configuration of data line drive circuit 30 along the limit in image displaying area territory.For example, also can do to become and make the data line 3 of odd column, the data line that sets from the limit along the side in image displaying area territory drives driving circuit and supplies with picture intelligence, and 3 of the data lines of even column are supplied with picture intelligence from the data line drive circuit that the limit along the opposite side in above-mentioned image displaying area territory sets.If doing to become makes and resembles pectination ground driving data lines 3 in this wise, because occupied area that can the growth data line drive circuit, so can constitute the circuit of complexity.On remaining one side of this external tft array substrate 7, be provided with and be used for many wirings 33 that 32 of scan line drive circuits that are arranged on the both sides in image displaying area territory are coupled together.Then, have subtend substrate 15 fixed bondings of identical substantially profile by means of 28 of sealing agent to tft array substrate 7 with sealant 28.
In addition, the corner part of tft array substrate 7 at least one in the localities, be provided with and apply voltage on the counter electrode 24 that is used for making subtend subtend substrate 15 and become possible common electrode 60.By liquid crystal 16, with counter electrode 15 tops of the place face-off that has formed this common electrode 60, be formed with and be used between each substrate, forming turning part 34 between the substrate that conducts, and couple together with each common electrode 60.60 of each common electrodes, in Fig. 6, the shared wiring of representing by means of with dashed lines and solid line 61 is joined to one another, simultaneously, be connected on the common terminal 62, making can be according to the voltage that counter electrode 24 adds undelayed homogeneous that inputs to that is derived from common terminal 62.In addition, as long as can give the voltage that counter electrode 24 adds does not have delay and homogeneous, the number that sets of self-evident increase and decrease common electrode 60 is possible.
The summary in the cross section when 1 chain line B-B ' that Fig. 7 shows at liquid-crystal apparatus shown in Figure 6 locates to cut describes in more detail to turning part between substrate 34.Fig. 7 is shown schematically in the connection status between tft array substrate 7 and the subtend substrate 15, for those at above-mentioned Fig. 1 to the formation that does not have direct relation that is connected between the on-off element of TFT illustrated in fig. 6 etc. and alignment films etc. and substrate, omit and do not describe, in Fig. 7, tft array substrate 7 and subtend substrate 15, with sealant 28 liquid crystal 16 fixed bondings are got up, and keep conducting with turning part between substrate 34.Turning part 34 is provided so that with the common electrode 60 that is arranged on tft array substrate 7 tops in subtend substrate 15 tops and contacts between substrate, and the aggregate value of the thickness c of the height a of protuberance 50 and the thickness b of conductive layer 51 and common electrode 60 becomes the cell gap for liquid-crystal apparatus.That is, the result becomes to turning part between substrate 34 and has function as liner.
If adopt turning part 34 between the substrate of such formation, with the existing turning part that constitutes by conductive paste relatively, its space that forms the zone is become to littler, it is possible that narrow architrave is changed into.In addition, conductive layer 51 is owing to the membrane material by homogeneous constitutes, even if its conductivity can not change yet in which part, so can the regulation resistance value keep conducting between substrate.In addition, adopt to set a plurality of conductivity that make and become way, just can add the voltage of undelayed homogeneous, thereby can carry out the demonstration of distincter image to subtend substrate 15 for turning part between constant substrate.
The formation of the liquid-crystal apparatus of embodiment 2
Below, referring to Fig. 8 and Fig. 9 embodiment of the present invention 2 are described.Fig. 9 is the sectional view when 1 chain line C-C ' of liquid-crystal apparatus shown in Figure 8 locates to cut open.
The difference of liquid-crystal apparatus of the present embodiment and embodiment 1 is turning part between substrate 34 is housed in the inside that liquid crystal 16 is enclosed in the sealant 28 between substrate.
Owing to making to become such formation, just can improve the pressure viscosity between the turning part 34 and common electrode 60 between substrate and not only increase its physical strength, the variation of the resistance value of turning part 34 between the substrate that can also reduce to produce because of the variation of pressing sticking state.Owing to this, just can keep higher the conducting of reliability between substrate.
In addition, if adopt this formation, conductive layer 51 just can directly be exposed in the outer gas, just can prevent the rising etc. of the resistance value of the conductive layer 51 that causes because of oxidation etc., can become to be the better liquid-crystal apparatus of against weather.
Have, if adopt this formation, then the result just becomes to turning part between substrate 34 is housed in setting in the space of sealant 28, thereby can also realize further narrow architraveization again.Particularly make turning part between substrate 34 as being used under the situation that the liner in holding unit gap works, this effect is significant.
Electronic equipment
Below, the electronic equipment that possesses liquid-crystal apparatus of the present invention is described.
Figure 10 stereographic map has illustrated an example of mobile phone.
The stereographic map of Figure 11 has illustrated an example of watch style electronic equipment.
In Figure 11, label 1100 expression wrist-watch bodies, the liquid-crystal display section of above-mentioned liquid-crystal apparatus is used in label 1101 expressions.
The stereographic map of Figure 12 has illustrated an example of the portable information processing device of word processor, personal computer etc.
In Figure 12, label 1200 is signal conditioning packages, and label 1202 is importations of keyboard etc., and label 1204 is signal conditioning package bodies, and label 1206 is to use the liquid-crystal display section of above-mentioned liquid-crystal apparatus.
Figure 10 is to electronic equipment shown in Figure 12, owing to being the electronic equipment that possesses the liquid-crystal display section that uses above-mentioned liquid-crystal apparatus, so can realize showing electronic equipment of high grade.
In addition, technical scope of the present invention is not limited to above-mentioned embodiment, can all in addition changes in the scope that does not depart from aim of the present invention.For example, in above-mentioned embodiment 1 and 2, though, also can constitute with the stack membrane more than 2 layers only with the film formation protuberance 50 of thickness 1 bed thickness.In addition, though what illustrate in above-mentioned embodiment is the example that forms protuberance 50 with the organic material film of polypropylene screen, polyimide film etc.,, also can replace inorganic material film without these materials with silicon oxide layer, silicon nitride film etc.Have, with regard to the shape or the formation position of protuberance 50, remove outside the example that illustrates in the above-described embodiment, the change design also can suit.
In the above-described embodiment, though illustrative is the liquid-crystal apparatus of TFT being used as the active matrix mode of on-off element, but, in addition, also can be used as thin film diode (TFD) liquid-crystal apparatus of the active matrix mode of on-off element, or use in the liquid-crystal apparatus of passive matrix mode.In addition, also can use the present invention at other electro-optical device such as electroluminescence, plasma scope.
Just as more than explain, if employing the present invention, become turning part between substrate owing to be arranged on protuberance on a side the substrate work that is covered with conductive layer handle, so not only between substrate, keep stable conducting, and, be possible so narrow architrave changes into owing to can reduce shared space in electro-optical device, turning part between substrate.
In addition,, then also can carry out the control of cell gap simultaneously, also can make it to work as liner if in advance the thickness of the height of protuberance and conductive layer is set at the size of regulation, thereby can further narrow architraveization.
Have again, if turning part between substrate of the present invention is housed in the sealant inside of encapsulated liquid crystals, then remove can further narrow architraveization outside, not only can improve the physical strength of turning part between substrate, conductive layer no longer is exposed in the outer gas, can also between substrate, keep more stable conducting, can make to become the good electro-optical device of against weather.
Claims (13)
1. an electro-optical device is that electrooptical material is seized on both sides by the arms the electro-optical device that constitutes between a pair of substrate opposite to one another, it is characterized in that:
The inner face that constitutes each substrate of above-mentioned a pair of substrate is provided with current-carrying part, simultaneously, side's substrate in the above-mentioned a pair of substrate is provided with turning part between the substrate that is made of the protuberance that is covered with conductive layer, by turning part between aforesaid substrate the current-carrying part of above-mentioned each substrate is electrically connected to each other.
2. an electro-optical device is to seize electrooptical material on both sides by the arms constitute electro-optical device between a pair of substrate opposite to one another, it is characterized in that:
The inner face that constitutes each substrate of above-mentioned a pair of substrate is provided with current-carrying part, simultaneously, be provided with on side's substrate in above-mentioned a pair of substrate and will remain the protuberance of predetermined distance between above-mentioned a pair of substrate, the current-carrying part of above-mentioned each substrate is electrically connected to each other by be layed onto turning part between the substrate that constitutes on the raised part with conductive layer.
3. electro-optical device according to claim 1 and 2 is characterized in that: the protuberance of turning part is made of 1 layer of the substrate that constitutes an above-mentioned side or the membrane material of multilayer between aforesaid substrate.
4. electro-optical device according to claim 1 and 2 is characterized in that: the protuberance of turning part is made of resin material between aforesaid substrate.
5. according to any one the described electro-optical device in the claim 1 to 4, it is characterized in that: the conductive layer of turning part is made of metal film between aforesaid substrate.
6. according to any one the described electro-optical device in the claim 1 to 4, it is characterized in that: the conductive layer of turning part is made of transparent and electrically conductive film between aforesaid substrate.
7. according to any one the described electro-optical device in the claim 1 to 6, it is characterized in that: above-mentioned electrooptical material is a liquid crystal.
8. according to any one the described electro-optical device in the claim 1 to 7, it is characterized in that: the turning part is arranged on the overseas peripheral part of image displaying area in each substrate between aforesaid substrate.
9. according to any one the described electro-optical device in the claim 1 to 7, it is characterized in that: the turning part is arranged on the inside of the hermetic unit of the above-mentioned electrooptical material of sealing between aforesaid substrate.
10. the manufacture method of an electro-optical device is the manufacture method of electrooptical material being seized on both sides by the arms the electro-optical device that constitutes between a pair of substrate opposite to one another, it is characterized in that having:
The operation of protuberance is set on the substrate of the side in above-mentioned a pair of substrate;
And forming conductive layer on this protuberance to form the operation of turning part between substrate.
11. the manufacture method of electro-optical device according to claim 10 is characterized in that: the protuberance of turning part between one-body molded aforesaid substrate when the moulding of aforesaid substrate.
12. the manufacture method of electro-optical device according to claim 10 is characterized in that: the protuberance that forms turning part between aforesaid substrate with photoetching method.
13. an electronic equipment is characterized in that: possess any one the described electro-optical device in the claim 1 to 9.
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| JP064316/2002 | 2002-03-08 | ||
| JP2002064316A JP2003262885A (en) | 2002-03-08 | 2002-03-08 | Electro-optic device, method of manufacturing the same, and electronic apparatus |
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| CN1444072A true CN1444072A (en) | 2003-09-24 |
| CN1201183C CN1201183C (en) | 2005-05-11 |
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| CNB031049524A Expired - Fee Related CN1201183C (en) | 2002-03-08 | 2003-02-28 | Electrooptical device and mfg. method electronic apparatus |
| CNU032401051U Expired - Lifetime CN2672685Y (en) | 2002-03-08 | 2003-03-03 | Electro-optical device and electronic device |
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| CNU032401051U Expired - Lifetime CN2672685Y (en) | 2002-03-08 | 2003-03-03 | Electro-optical device and electronic device |
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| US (1) | US20030199114A1 (en) |
| JP (1) | JP2003262885A (en) |
| KR (1) | KR100530644B1 (en) |
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| TW (1) | TW594162B (en) |
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| TWI577000B (en) | 2015-01-21 | 2017-04-01 | 群創光電股份有限公司 | Display device |
| CN105739188A (en) * | 2016-04-14 | 2016-07-06 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method, display panel, as well as frame sealing adhesive coating method and device |
| TWI754173B (en) * | 2018-01-05 | 2022-02-01 | 友達光電股份有限公司 | Liquid crystal device |
| TWI676066B (en) * | 2018-01-05 | 2019-11-01 | 友達光電股份有限公司 | Liquid crystal device |
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| US4640583A (en) * | 1983-07-22 | 1987-02-03 | Kabushiki Kaisha Seiko Epson | Display panel having an inner and an outer seal and process for the production thereof |
| US5081520A (en) * | 1989-05-16 | 1992-01-14 | Minolta Camera Kabushiki Kaisha | Chip mounting substrate having an integral molded projection and conductive pattern |
| US6101846A (en) * | 1997-02-06 | 2000-08-15 | Micron Technology, Inc. | Differential pressure process for fabricating a flat-panel display face plate with integral spacer support structures |
| US5946057A (en) * | 1997-05-28 | 1999-08-31 | Nec Corporation | Liquid crystal display having electrostatic discharge damage prevention |
| TW561292B (en) * | 1998-04-01 | 2003-11-11 | Seiko Epson Corp | Liquid crystal device, method for manufacturing the liquid crystal device, and electronic apparatus |
| US6636192B1 (en) * | 1999-01-28 | 2003-10-21 | Seiko Epson Corporation | Electrooptic panel, projection display, and method for manufacturing electrooptic panel |
| JP2001100217A (en) * | 1999-09-29 | 2001-04-13 | Nec Corp | Color liquid crystal display device and method for manufacturing the same |
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2002
- 2002-03-08 JP JP2002064316A patent/JP2003262885A/en active Pending
-
2003
- 2003-01-27 US US10/351,547 patent/US20030199114A1/en not_active Abandoned
- 2003-02-28 CN CNB031049524A patent/CN1201183C/en not_active Expired - Fee Related
- 2003-03-03 CN CNU032401051U patent/CN2672685Y/en not_active Expired - Lifetime
- 2003-03-06 TW TW092104828A patent/TW594162B/en not_active IP Right Cessation
- 2003-03-07 KR KR10-2003-0014210A patent/KR100530644B1/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100445850C (en) * | 2003-05-15 | 2008-12-24 | 三星电子株式会社 | Liquid crystal display apparatus and method of forming the same |
| CN102253519A (en) * | 2011-06-10 | 2011-11-23 | 友达光电（苏州）有限公司 | LCD (liquid crystal display) panel and manufacturing method thereof |
| CN104122696A (en) * | 2013-08-21 | 2014-10-29 | 深超光电（深圳）有限公司 | Touch-control liquid crystal display device |
| CN104360545A (en) * | 2014-12-03 | 2015-02-18 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN109891311A (en) * | 2016-09-05 | 2019-06-14 | 堺显示器制品株式会社 | The manufacturing method of display panel, display device and display panel |
| CN106125419A (en) * | 2016-09-14 | 2016-11-16 | 豪威半导体（上海）有限责任公司 | LCOS display and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN2672685Y (en) | 2005-01-19 |
| US20030199114A1 (en) | 2003-10-23 |
| KR20030074282A (en) | 2003-09-19 |
| KR100530644B1 (en) | 2005-11-22 |
| TW594162B (en) | 2004-06-21 |
| TW200304566A (en) | 2003-10-01 |
| JP2003262885A (en) | 2003-09-19 |
| CN1201183C (en) | 2005-05-11 |
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