CN1441474A - Method for producing semiconductor device - Google Patents
Method for producing semiconductor device Download PDFInfo
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- CN1441474A CN1441474A CN03103351A CN03103351A CN1441474A CN 1441474 A CN1441474 A CN 1441474A CN 03103351 A CN03103351 A CN 03103351A CN 03103351 A CN03103351 A CN 03103351A CN 1441474 A CN1441474 A CN 1441474A
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- Prior art keywords
- semiconductor device
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- conductive plate
- lead
- manufacture method
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 160
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229910000679 solder Inorganic materials 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 65
- 239000010949 copper Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000314 lubricant Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 241000218202 Coptis Species 0.000 claims description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 230000035939 shock Effects 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 36
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 17
- 230000000694 effects Effects 0.000 description 12
- 239000011888 foil Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 208000037656 Respiratory Sounds Diseases 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 244000144992 flock Species 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Wire Bonding (AREA)
- Bipolar Transistors (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
To solve a problem of a semiconductor element being adversely affected due to a shock by wire bonding, since conductors are connected to electrodes on the surface of the semiconductor element by wire bonding in the manufacturing method of a semiconductor device. When conductive plates 38 and 39 on the surface of the semiconductor element 32 are formed in the manufacturing method of the semiconductor device, one conductive plate 50 is half-etched and back-etched. The conductive plates 38 and 39 are connected to connection regions 36 and 37 by fixing the conductors 40 and 41 with solder. Thus, wire bonding work on the surface of the semiconductor element 32 can be omitted completely, and therefore the shock to the semiconductor element 32 due to wire bonding can be eliminated.
Description
Technical field
The present invention relates to be used for the manufacture method of the distribution installation constitution on the outer electrode of semiconductor device of semiconductor device of electric power at interior dress.
Prior art
About the existing semiconductor device that is used for electric power, we introduce, and for example, Japan puts down into the device that discloses in the 5-206449 patent gazette of announcing in 5 years.As putting down in writing in the above-mentioned communique, the existing semiconductor device that is used for electric power has been prepared standard-sized switch element chip for the purposes that can be applicable to various current capacities.And, adopt a mode that this switch element chip connect in parallel of the number that will match with the current capacity of purposes gets up to use.
Below, we to Figure 12, illustrate an example about the structure of the semiconductor device that is used for electric power with reference to Figure 10 simply.Again, here, we give up the explanation to the circuit working of above-mentioned semiconductor device.And Figure 10 is the plane graph of existing semiconductor device.Figure 11 is the sectional view of the A-A line direction of Figure 10, and Figure 12 is the sectional view of the B-B line direction of Figure 10.
As shown in the figure, for example, on the periphery of the 1st rectangular-shaped battery lead plate 1 that constitutes by copper, form battery lead plate 3.Battery lead plate 3 has, for example, and the shape that mouth word by such insulation board 2 mountings of aluminium oxide few is perpendicular.And, on the middle body of the 1st electrode 1, form the 3rd battery lead plate 5.The 3rd battery lead plate 5 for example, by mounting, has the band shape of 2 limit almost parallels of the almost parallel of length direction and the 2nd battery lead plate 3 by the such insulation board 4 of aluminium oxide.Further, on the 1st battery lead plate 1, form and leave the 2nd battery lead plate 3 and the 3rd battery lead plate 5, and surround the 3rd battery lead plate 5 buffer board 6 of mounting like that.Buffer board 6 be by, for example, the approaching metal material of thermal coefficient of expansion that molybdenum is such and semiconductor constitutes.
And, respectively per 3 rectangular-shaped IGBT (Insulated-Gate-Bipolar-Transistor (igbt)) chips 7 that are provided with side by side are bonded on the buffer board 6.Again, 2 rectangular-shaped diode chip for backlight unit 8 that will dispose in abutting connection with ground respectively be bonded in the bight on the buffer board 6.Igbt chip 7 has a pair of first type surface, on a first type surface collector 9 is set respectively, and emitter 10 and grid 11 are set on another first type surface.And, collector 9 is positioned in a side of buffer board 6.On the other hand, diode chip for backlight unit 8 has a pair of first type surface, on a first type surface anode 12 is set respectively, and negative electrode 13 is set on another first type surface.And, negative electrode 13 is positioned in a side of buffer board 6.
And, make between a plurality of emitters 10 on the igbt chip 7 and the 2nd battery lead plate 3 by bonding wire 14 to be electrically connected.Make between the grid 11 of igbt chip 7 and the 3rd battery lead plate 5 by bonding wire 14 and be electrically connected again.Be electrically connected between a plurality of anodes 12 that also make diode chip for backlight unit 8 by bonding wire 15 and the 2nd battery lead plate 3 again.In addition, by adhesive layer 16, the 1 leading-out terminals 17, the 2 leading-out terminals 18, the 3 leading-out terminals 19 formations such as grade of scolder etc.These leading-out terminals both can form one with battery lead plate, also can be bonding with other ready each battery lead plate directly or indirectly.
As mentioned above, on existing semiconductor device, make between emitter 10 on the igbt chip 7 and the 2nd battery lead plate 3 by bonding wire 14 to couple together.At this moment, on igbt chip 7, form a plurality of emitters 10, respectively bonding wire 14 is welded on each emitter 10.And, for diode chip for backlight unit 8 similarly, on chip 8, form a plurality of anodes 12.Therefore, respectively bonding wire 15 is welded on each anode 12.By the igbt chip 7 that in above-mentioned semiconductor device, uses of change and the number of diode chip for backlight unit 8, can give play to various function again.
That is, for example, on 1 igbt chip 7, in order to supply with impartial electric current to emitter region, with emitter 10 the same number of bonding wires 14 are essential materials.And, further, must carry out the welding that only equates with the number of bonding wire 14.Therefore, existing need very long weld time, operating efficiency is worsened can not improve the such problem of a large amount of productivitys.
Further, couple together, implement thermo-compressed terminal conjunction method, ultrasonic wave terminal conjunction method etc. by bonding machine in order to make a plurality of emitters 10 and the 2nd battery lead plate 3 on the igbt chip 7 by bonding wire 14.At this moment, must on igbt chip 7, add vibration, on chip 7, add very big stress.As a result, exist owing to repeat this operation, in the interlayer dielectric that constitutes by silicon oxide layer etc., introduce the such problem of crackle.
The present invention puts forward in view of above-mentioned existing problem, as the feature of the manufacture method of semiconductor device of the present invention is that it possesses and prepares to have at least one first type surface, and the operation of a plurality of electric currents of a part by the semiconductor device of electrode and control electrode exposed in a plurality of holes that have from be arranged on the insulating barrier that above-mentioned first type surface forms respectively, prepare a conductive plate, from with the above-mentioned conductive plate of adhesive surface etching of above-mentioned semiconductor device, on above-mentioned adhesive surface, form concavo-convex, after being bonded in above-mentioned conductive plate on the above-mentioned semiconductor device surface, carry out etching from the adhesive surface of above-mentioned conductive plate and opposite face, the raised part of remaining above-mentioned conductive plate, and make the operation of their each self-separations, with the lead of preparing to constitute by electric conducting material, the operation that above-mentioned lead and the above-mentioned conductive plate that separates are coupled together.
The feature of the manufacture method of semiconductor device of the present invention is corresponding with the protuberance of above-mentioned conductive plate respectively like that from the adhesive surface above-mentioned conductive plate of etching suitably on by electrode and control electrode at a plurality of above-mentioned electric current that forms on the above-mentioned semiconductor device, and it is above-mentioned concavo-convex that above-mentioned conductive plate is formed on adhesive surface.
Further, the feature of the manufacture method of semiconductor device of the present invention is that preferentially above-mentioned lead is a copper cash, by scolder above-mentioned lead and independently above-mentioned conductive plate on semiconductor device surface is bondd.
Further, the feature of the manufacture method of semiconductor device of the present invention is that preferentially above-mentioned lead is gold thread or aluminum steel, by connecing terminal conjunction method above-mentioned lead and independently above-mentioned conductive plate on semiconductor device surface is coupled together.
Description of drawings
Fig. 1 is the oblique view of the semiconductor device in the explanation example of the present invention.
Fig. 2 is the plane graph of semiconductor device that is used for the semiconductor device of example of the present invention.
Fig. 3 is the sectional view of the X-X line direction of the semiconductor device shown in Figure 1 in the example of the present invention.
Fig. 4 is the sectional view of the characteristic in the explanation example of the present invention.
Fig. 5 is the sectional view of the Y-Y line direction of the semiconductor device shown in Figure 1 in the example of the present invention.
Fig. 6 is the oblique view of the semiconductor device in the explanation example of the present invention.
Fig. 7 is the oblique view of the manufacture method of the semiconductor device in the explanation example of the present invention.
Fig. 8 is the oblique view of the manufacture method of the semiconductor device in the explanation example of the present invention.
Fig. 9 is the oblique view of the manufacture method of the semiconductor device in the explanation example of the present invention.
Figure 10 is the plane graph of the existing semiconductor device of explanation.
Figure 11 is the sectional view of the existing semiconductor device of explanation.
Figure 12 is the sectional view of the existing semiconductor device of explanation.
Embodiment
We are with reference to the example of Fig. 1～Fig. 9 explanation as semiconductor device of the present invention now.Fig. 1 and Fig. 6 are the oblique views that is used to illustrate the essential structure of semiconductor device of the present invention, Fig. 2 is the plane graph on the surface of semiconductor device shown in Figure 1, Fig. 3 is the sectional view of the X-X line direction of oblique view shown in Figure 1, Fig. 4 is the sectional view that is bonded in the conductive plate on the electrode, and Fig. 5 is the sectional view of the Y-Y line direction of oblique view shown in Figure 1.And Fig. 7～Fig. 9 is the figure that is used to illustrate the manufacture method of semiconductor device.
At first, as shown in Figure 1, semiconductor device of the present invention mainly is by insulating substrate 31, with by semiconductor device 32 being bonded in the corresponding bonded areas 33 of collector that the conductive foil on the insulating substrate 31 constitutes, 1 seat 34 of organizing a performance that constitutes by insulating material in the both sides of bonded areas 33,35, at pedestal 34, the join domain 36 corresponding on 35 with emitter that constitutes by conductive foil and grid, 37, conductive plate 38 corresponding and the conductive plate 39 corresponding with grid with the emitter that on semiconductor device 32 surfaces, forms, conductive plate 38 that will be corresponding and the conductive plate 39 and join domain 36 corresponding with grid with emitter, 37 leads 40 of answering that be electrically connected with each electrode pair, 41, the emitter terminal 42 that join domain 36,37 is connected with outer lead, the collector terminal 44 that gate terminal 43 and bonded areas 33 are connected with outer lead constitutes.
Secondly, we illustrate each inscape that constitutes semiconductor device of the present invention.
At first, substrate 31 is described.In this example, on substrate 31, for example, installation has current density 300A/cm
2Deng the such semiconductor device that is used for electric power 32 of igbt chip of characteristic.Therefore, consider that the ceramic substrate of using fine heat radiation property is as substrate 31 from the thermal diffusivity of the heat of semiconductor device 32 generations.And other material as constituting substrate 31 also can adopt AlN (aluminium nitride) or Cu (copper) substrate, Fe (iron) substrate, and the alloy surface of Fe-Ni substrate etc. carries out the metal substrate after the insulation processing.Further, also can be used in the substrate of bonding ceramic substrate on the above-mentioned metal substrate surface.
Secondly, consider processability, thermal diffusivity etc., the pedestal 34,35 that is arranged on this substrate 31 is made of pottery.And, relatively disposing pedestal 34,35 with the both sides of semiconductor device 32, the surperficial high position that the surface of pedestal 34,35 is in than semiconductor device 32 forms pedestal 34,35 like that.By doing like this, form and prevent the structure that lead 40,41 is short-circuited at the edge of semiconductor device 32.And, in this example, and be for example, to form by Copper Foil in order to make the corresponding join domain 36 of the emitter that is electrically connected with external device (ED) at the emitter 45 (please refer to Fig. 2) that on semiconductor device 32 surfaces, forms on the pedestal 34 45.On the other hand, identical in pedestal 35 1 sides with pedestal 34, form the join domain 37 corresponding with grid 46 (please refer to Fig. 2).
And the emitter terminal 42 that is used to make the join domain 36 corresponding with emitter 45 to be connected with outside terminal forms one with join domain 36.On the other hand, similarly, the gate terminal 43 that is used to make the join domain 37 corresponding with grid 46 to be connected with outside terminal forms one with join domain 37.
Also exist the situation that the lead 40,41 of deriving from the surface of semiconductor device 32 directly is connected with the external current conductor of module etc. again.At this moment, omitted above-mentioned pedestal 34,35, join domain 36,37 and terminal 42,43.Again, also can have and omit pedestal 34,35 self, on insulating substrate 31, form the structure of join domain 36,37.And, be not limited to semiconductor device 32 and be bonded in situation on the insulating substrate 31, even if be bonded in lead frame, also can realize the outside wiring structure among the present invention in the first-class situation of printed substrate.
Secondly, the surface structure of our explanations semiconductor device 32 as shown in Figure 2.On the surface of semiconductor device 32, form insulating barrier 47, expose a plurality of emitters 45 and grid 46 by the hole 48 that is arranged on this insulating barrier 47.At this moment, the hole 48 that is arranged on the insulating barrier 47 roughly has 1 row ground opening at the paper left and right directions, and on paper the below to forming a plurality of such holes 48.And, descending on paper to form a plurality of holes 48 on the position of direction almost parallel, emitter 45 and grid 46 alternatively 48 expose from the hole.Again, do not draw among the figure, but for example in the lower area of emitter 45 and grid 46, form silicon oxide layer as interlayer dielectric.
Secondly, as shown in Figure 3, in semiconductor device of the present invention, for example have, to be bonded in the emitter 45 that exposes from the insulating barrier 47 on semiconductor device 32 surfaces and the feature on the grid 46 by the conductive plate 38,39 that Cu (copper) or Cu (copper) alloy constitute by scolder 49 (please refer to Fig. 4).For 1 emitter 45 or 1 conductive plate 38,39 of grid 46 usefulness.
Specifically, as shown in Figure 1, conductive plate 38,39 forms the size that can roughly cover 48 each emitters 45 that expose and grid 46 from the hole fully or they is taken in size in the hole 48.The emitter 45 and the grid 46 that these conductive plates 38,39 and the hole 48 from the insulating barrier 47 that is arranged on semiconductor device 32 surfaces are exposed by scolder 49 bond.At this moment, insulating barrier 47 is made of the material that does not have scolder to be stained with lubricant nature.Therefore, as shown in Figure 4, can positively emitter 45 and grid 46 be got up with conductive plate 38,39 bondings by the self-adjusting effect that causes by solder surface tension force as the scolder of binding material.As mentioned above,, conductive plate 38,39 positively is fixed together with electrode 45,46 in its roughly whole join domains with scolder by conductive plate 38,39 and the magnitude relationship of exposing electrode again.By doing like this, in this example, on the surface of semiconductor device 32, descend direction roughly equally spaced and almost parallel ground configuration 10 capable conductive plates 38,39 on paper.
As a result, the conductive plate 38,39 corresponding with the emitter 45 of adjacency and grid 46 has linearity, and the self-adjusting effect by the surface tension of utilizing by scolder causes can realize can not being in contact with one another the structure that is short-circuited.When conductive plate 38,39 being bonded on emitter 45 and the grid 46,, can make the bonding operation of conductive plate 38,39 become easy by utilizing the self-adjusting effect of scolder again.
For corresponding, and reply and the corresponding current capacity of use, can change the width of conductive plate 38,39, the size of thickness etc. with the semiconductor device 32 that uses again, at every turn.
Secondly, as Fig. 1 and shown in Figure 6, in semiconductor device of the present invention, have the lip-deep conductive plate 38,39 that will be bonded in semiconductor device 32 and be electrically connected the feature of getting up with join domain 36,37 by lead 40,41.And, have 2 methods that the following describes as the method that connects lead, the structure that our explanation is formed by these methods.Again, Fig. 6 is the oblique view that is used to illustrate the essential structure of semiconductor device of the present invention.
At first, as the 1st structure be when with copper (Cu) line for example as the situation of lead 40,41.The feature of this structure is conductive plate 38,39 and join domain 36,37 to be coupled together with lead 40,41 by scolder.Promptly realized complete structure on the surface of semiconductor device 32 without terminal conjunction method.And, in the 1st structure, as shown in Figure 1, with lead 40,41 conductive plate 38,39 and the join domain 36,37 corresponding with emitter 45 and grid 46 are coupled together by scolder.And an end of lead 40,41 connects in the end of conductive plate 38,39.Here, the end of conductive plate is to be connected with join domain on the surface of conductive plate of a side at lead, is positioned at the surf zone of the conductive plate on the electrode that exposes from the hole.But lead 40,41 also can bond on the optional position of conductive plate 38,39.And, in order to improve the connectivity of lead 40,41 and conductive plate 38,39, in the bonded areas of lead 40,41 and conductive plate 38,39, implementing the plating scolder in advance, plating Au (gold) plates Ag (silver), platinum plating (Pd) etc.Not only in bonded areas, and can implement above-mentioned plating lead 40,41 and all going up of conductive plate 38,39 again.By this structure, in the present invention because on the surface of semiconductor device 32 without terminal conjunction method, so can not give the impact that semiconductor device 32 is caused by terminal conjunction method.As a result, can in the interlayer dielectric that forms on the lower area of the electrode 45,46 of semiconductor device 32, not introduce crackle yet, thereby the semiconductor device of the reliability brilliance of product property can be provided.
Further, as mentioned above, in semiconductor device of the present invention, lead 40,41 connects in the end of conductive plate 38,39.And as mentioned above, conductive plate 38,39 is roughly boning with the electrode 45,46 that exposes in the Zone Full by scolder.By doing like this, can realize to provide to the electrode 45,46 that on the surface of semiconductor device 32, exposes the structure of the electric current of equalization by insulating barrier 47.
Further, in semiconductor device of the present invention, as mentioned above, conductive plate 38,39 and join domain 36,37 couple together by lead 40,41 respectively.By doing like this, even if how many bonding position of join domain 36,37 and semiconductor device 32 relation and their height relationships have error with respect to design, because lead 40,41 have flexibility, and ductility etc. are so also can deal with this error neatly.As a result, can form operation and a large amount of productive structure of making by the raising semiconductor devices such as thickness allowed band that enlarge pedestal 34,35.
Further, in semiconductor device of the present invention, the conductive plate 38 that a plurality of and emitter 45 is corresponding and be installed on the surface of semiconductor device 32 with the corresponding conductive plate 39 of grid 46.And, by from each conductive plate 38,39 with lead 40,41 flock of birds shapes be fetched into the join domain 36,37 that forms in semiconductor device 32 both sides, can constitute the structure of avoiding the intensive semiconductor device of lead 40,41 simply.
Secondly, be as shown in Figure 6 as the 2nd structure, when with for example Au (gold) line and Al (aluminium) line situation as lead 40,41.The feature of this structure is by lead 40,41 usefulness terminal conjunction methods are coupled together conductive plate 38,39 and join domain 36,37.And, form the structure that lead 40,41 connects in the end of conductive plate 38,39.Here, as mentioned above, because by the scolder conductive plate 38,39 that positively bonds, so can disperse the impact that causes by terminal conjunction method like that at every turn as 1 conductive plate.Therefore, in the present invention, also can directly not use terminal conjunction method, conductive plate 38,39 is used as buffer board the surface of semiconductor device 32.As a result, can reduce the impact that causes by terminal conjunction method that gives semiconductor device 32 significantly.And, can prevent owing to introduce crackle in the interlayer dielectric that the impact during with terminal conjunction method forms on the lower area of emitter 45 and grid 46.Again, in this example, lead 40,41 and conductive plate 38,39 have the structure that lead 40,41 connects in the end of conductive plate, but not necessarily will be defined in this structure.Even if in the situation that lead 40,41 connects in the optional position of conductive plate 38,39, also can access effect same as described above.Here, the end of conductive plate 38,39 is also identical with the 1st structure.
Again, because can obtain utilizing the flexibility of lead 40,41 in the same manner with the 1st structure, other effect of the effect of ductility etc. etc. is so no longer carry out the explanation that can obtain with reference to above-mentioned explanation here.
At last, on substrate 31, for example, form the bonded areas 33 corresponding with the collector that constitutes by Copper Foil.And, as mentioned above, form collector (not drawing among the figure) in the inside of semiconductor device 32, by scolder this collector is electrically connected with bonded areas 33.From bonded areas 33, form the collector terminal 44 that becomes one with bonded areas 33, be connected with outer lead by this collector terminal 44.
Secondly, we are with reference to the example of Fig. 7～Fig. 9 explanation as the manufacture method of semiconductor device of the present invention.Here, about figure that is used to illustrate the semiconductor device structure and the label that is used for each inscape, under identical situation with identical figure and label.
As the 1st operation of the present invention, as shown in Figure 7, prepare insulating substrate 31, configuration and form the corresponding bonded areas 33 of collector that constitutes with conductive foil on this substrate 31 by the semiconductor device 32 that is used to bond, in the configuration of the two ends of bonded areas 33 and form 1 seat 34,35 of organizing a performance that constitutes by insulating material, at pedestal 34, configuration and the formation join domain 36,37 corresponding on 35 with emitter that constitutes by conductive foil and grid.
In this operation, as shown in Figure 7, at first, prepare insulating substrate 31.And on substrate 31, for example, it is 300A/cm that installation has current density
2, the direct current signal current amplification degree is the such semiconductor device that is used for electric power 32 of igbt chip of about 1000 characteristic.Therefore, consider that the ceramic substrate of using fine heat radiation property is as substrate 31 from the thermal diffusivity of the heat of semiconductor device 32 generations.And other material as constituting substrate 31 also can adopt AlN (aluminium nitride) or copper base, the iron-based sheet, and the alloy surface of Fe-Ni substrate etc. carries out the metal substrate after the insulation processing.Further, also can be used in the substrate of bonding ceramic substrate on the above-mentioned metal substrate surface.
Secondly, as shown in the figure, conductive foil is crimped on the middle body of substrate 31, correspondingly forms the bonded areas 33 corresponding with collector with the size of semiconductor device 32.And, form collector (not drawing among the figure) in the inside of semiconductor device 32, in the operation afterwards, this collector is electrically connected with bonded areas 33 by scolder.Therefore,, form the collector terminal 44 that becomes one with bonded areas 33, be connected with outer lead by this collector terminal 44 from bonded areas 33.
At this moment, consider the adhesiveness of scolder, weldability etc. are selected the material as conductive foil.And, as material, can utilize with copper as the conductive foil of main material, with the conductive foil of aluminium as main material, or the conductive foil that constitutes with alloys such as Fe-Ni etc., but in this example, adopt the conductive foil of copper as main material.
Secondly, 1 seat 34,35 of organizing a performance is set in the both sides of bonded areas 33 on substrate 31.Consider processability, thermal diffusivity etc. form these pedestals 34,35 by pottery.And, identical with the situation of bonded areas 33 on these pedestals 34,35, for example, prepare the conductive foil of Copper Foil etc., form join domain 36 corresponding and the join domain 37 corresponding like that in order to cover pedestal 34,35 upper parts with grid 46 with emitter 45.At this moment, on the join domain 36 corresponding, form and be used for the emitter terminal 42 that is connected with outside terminal with join domain 36 with emitter 45.On the other hand, similarly, on the join domain 37 corresponding, form and be used for the gate terminal 43 that is connected with outside terminal with join domain 37 with grid 46.
Again, the situation that also exists the lead 40,41 of deriving directly to be connected with the external current conductor of module etc. from the surface of semiconductor device 32.At this moment, omitted above-mentioned pedestal 34,35, join domain 36,37 and terminal 42,43.Again, semiconductor device 32 is not limited to the situation that is bonded on the insulating substrate 31, also exists and is bonded in lead frame, the situation that printed substrate is first-class.At this moment, can omit insulating substrate 31.
Secondly, as the 2nd operation of the present invention, as shown in Figure 8, form and cover the emitter 45 (please refer to Fig. 2) that exposes from the hole 48 of the insulating barrier 47 on semiconductor device 32 surfaces and the battery lead plate 38,39 on the grid 46 (please refer to Fig. 2) respectively.
In this operation, shown in Fig. 8 (A), at first, prepare 1 conductive plate 50.Conductive plate 50 need have the size that can cover the electrode that exposes from semiconductor device 32 surfaces at least fully.And conductive plate 50 for example, is made of copper or copper alloy, and thickness need be about 100 μ m～500 μ m.But, correspondingly determine thickness with the purposes of current capacity that flows through semiconductor device etc.
Secondly, shown in Fig. 8 (B), in this example, with the adhesive surface of the semiconductor device 32 of conductive plate 50 on, on the formation position of emitter 45 that forms on the surface of semiconductor device 32 and grid 46, form corresponding protuberances 51,52 in per 5 places respectively.At first, on conductive plate 50, form photo resistance (anti-etching mask).And, except becoming the zone of the protuberance 51,52 corresponding,, etching is carried out in photo resistance in order to expose conductive plate 50 with emitter 45 and grid 46.After this, selectively conductive plate 50 is carried out etching by photo resistance.
In this operation, in order evenly and accurately to make the degree of depth of the splitter box 53 that forms by etching, do not draw among the figure, but make splitter box 53 opening portions downward, spray etching liquid upward from the etching liquid supply pipe that is arranged on conductive plate 50 belows.As a result, the part of running into the splitter box 53 of etching liquid is etched, and etching liquid can not remain in the splitter box 53 and directly be discharged.By doing like this, can control the degree of depth of splitter box 53 by the processing time of etching liquid, can form even and high-precision splitter box 53.Again, etching liquid mainly adopts Clization iron or Clization copper.Again, on the protuberance 51,52 of conductive plate 50, implement the plating of selection in advance, can reach in the installation procedure afterwards, improve the purpose that scolder is stained with lubricant nature.
And, shown in Fig. 8 (C), with the adhesive surface of the semiconductor device 32 of conductive plate 50 on, can be corresponding with the emitter 45 and the grid 46 on semiconductor device 32 surfaces shown in Figure 2, alternatively and abreast form protuberance 51,52.
Secondly,, as shown in Figure 9, conductive plate 50 is bonded on the semiconductor device 32, after this, separates conductive plate 50 as the 3rd operation of the present invention.
In this operation, shown in Fig. 9 (A), with protuberance 51,52 position consistency of conductive plate 50 be bonded on the emitter 45 and grid 46 on semiconductor device 32 surfaces.And, be in advance, after implementing the scolder plating on the protuberance 51,52 that forms on the adhesive surface of conductive plate 50, to be bonded in semiconductor device 32 lip-deep methods again as the adhesive bonding method of this conductive plate 50.Again, also can be on the contrary, after implementing the scolder plating on the emitter 45 on semiconductor device 32 surfaces and the grid 46, the method for the conductive plate 50 that bonds again.At this moment, can conductive plate 50 be bonded on the surface of semiconductor device 32 by utilizing the self-adjusting effect that causes by solder surface tension force.As a result, can positional precision well the protuberance 51,52 of conductive plate 50 be bonded on emitter 45 and the grid 46.
Secondly, be separated into the conductive plate 38,39 corresponding with being bonded in semiconductor device 32 lip-deep conductive plates 50 with each emitter 45 and grid 46.As separation method, chemically and/or physically remove the opposing face of the adhesive surface of conductive plate 50, form each conductive plate 38,39.This operation is by grinding, grind and cut, etching, enforcement such as the evaporation of metal of laser.
And, shown in Fig. 9 (B), conductive plate 50 is carried out etching from the opposing face of adhesive surface, remove the part of supporting each protuberance 51,52 integratedly, protuberance 51,52 is remained on the surface of semiconductor device 32.By doing like this, on each emitter 45 on semiconductor device 32 surfaces and grid 46, form conductive plate 38,39.At this moment, as mentioned above, the degree of depth of the splitter box 53 of conductive plate 50 can be controlled, even and high-precision splitter box 53 can be formed by the processing time of etching liquid.Therefore, the conductive plate 38,39 on semiconductor device 32 surfaces has homogeneous thickness, and can positional precision be bonded in well on emitter 45 and the grid 46.
Manufacture method according to the semiconductor device of this operation, in the operation of bonding conductive plate 38,39 on semiconductor device 32 surfaces, each conductive plate 38,39 size is very small, can be used as the conductive plate of supporting integratedly 50 in the time of still on being bonded to semiconductor device 32 and is handled.Again, because with solder attach semiconductor device 32 and conductive plate 50, so can access the self-adjusting effect that causes by solder surface tension force.By doing like this, can enough conductive plate 38,39 be bonded in semiconductor device 32 lip-deep operations, once bond from a plurality of conductive plates 38,39 of 1 conductive plate 50.As a result, can improve the operation of installation conductive plate and a large amount of productivitys of semiconductor device.
Secondly, as the 4th operation of the present invention, as shown in Figure 1, the semiconductor device 32 of the conductive plate 38,39 that will bond is bonded on the bonded areas 33, with lead 40,41 conductive plate 38,39 and join domain 36,37 is electrically connected.And, in the explanation of the structure of semiconductor device, as mentioned above, also exist 2 methods as the method for attachment of lead 40,41.
At first, we illustrate the 1st manufacture method.In this operation, as shown in Figure 1, by lead 40,41 conductive plate 38,39 and join domain 36,37 are electrically connected with scolder.At first, for example use copper (Cu) line as lead 40,41.And, as binding material, for example conductive plate 38,39 and join domain 36,37 are coupled together with lead 40,41 with scolder.At this moment, by utilizing the self-adjusting effect that causes by solder surface tension force, can on desired position, connect conductive plate 38,39 and lead 40,41.Therefore, in this example, in order to improve the connectivity of lead 40,41 and conductive plate 38,39, in the bonded areas of lead 40,41 and conductive plate 38,39 in advance embodiment as, plating scolder, plating Au, plating Ag, platinum plating (Pd) etc.After this, both are coupled together, can on desired position, connect conductive plate 38,39 and lead 40,41 by scolder.In addition, not only in bonded areas, and can implement above-mentioned plating all going up of lead 40,41 and conductive plate 38,39.
And as shown in the figure, lead 40,41 and the end regions of conductive plate 38,39 on conductive plate 38,39 connect, but there is no particular limitation.Also can on the optional position on the conductive plate 38,39, connect.By this operation, finish semiconductor device shown in Figure 1.
That is, manufacturing method according to the invention can be implemented on the surface of semiconductor device 32 fully the structure without terminal conjunction method.According to this structure, in the present invention because on the surface of semiconductor device 32 without terminal conjunction method, so can not give the impact that semiconductor device 32 is caused by terminal conjunction method.As a result, can in the interlayer dielectric that forms on the lower area of the electrode 45,46 of semiconductor device 32, not introduce crackle yet, thereby the semiconductor device of the reliability brilliance of product property can be provided.
Further, in the manufacture method of semiconductor device of the present invention, couple together by lead 40,41 between semiconductor device 32 lip-deep conductive plates 38,39 and the join domain 36,37.By doing like this, even if how many bonding position of join domain 36,37 and semiconductor device 32 relation and their height relationships have error with respect to design, because lead 40,41 have flexibility, and ductility etc. are so also can deal with this error neatly.As a result, also can improve operation and a large amount of productivity of semiconductor device by enlarging the thickness allowed band of the pedestal 34,35 that forms join domain 36,37 from the teeth outwards.
Secondly, we illustrate the 2nd manufacture method.In this operation, as shown in Figure 6, by lead 40,41 conductive plate 38,39 and join domain 36,37 are coupled together with terminal conjunction method.At first be for example to use Au (gold) line and Al (aluminium) line situation as lead 40,41.The feature of this structure is by lead 40,41 conductive plate 38,39 and join domain 36,37 to be coupled together with terminal conjunction method.As shown in the figure, lead 40,41 connects in the end of conductive plate 38,39.Here, as mentioned above, because conductive plate 38,39 and electrode 45,46 bondings are got up, so can disperse each impact that causes by terminal conjunction method like that as 1 conductive plate by scolder.Therefore, in the present invention, also can directly not use terminal conjunction method, conductive plate 38,39 is used as buffer board the surface of semiconductor device 32.As a result, can reduce the impact that causes by terminal conjunction method that gives semiconductor device 32 significantly.And, introduce crackle in the interlayer dielectric that the impact in the time of can preventing owing to terminal conjunction method forms on the lower area of emitter 45 and grid 46.In addition, in this example, have for lead 40,41 and conductive plate 38,39, the structure that lead 40,41 connects in the end of conductive plate, but not necessarily to be defined in this structure.Even if in the situation that connects on the optional position of conductive plate 38,39, also can access effect same as described above at lead 40,41.Here, the end of conductive plate 38,39 is exactly above-mentioned position.
Again, in semiconductor device of the present invention, not necessarily to be defined in above-mentioned example, when with MOS transistor etc. such on chip surface, form the semiconductor device of different types of electrode the time, also can access same effect.In addition, in the scope that does not break away from main idea of the present invention, can carry out all changes.
Effect of the present invention is
The first, in the manufacture method of semiconductor device of the present invention, conductive plate is being bonded in The a plurality of electric currents that form on the semiconductor device surface are by in the operation on electrode and the control electrode, Use lithographic technique. By doing like this, can on 1 conductive plate, once bond and each A plurality of conductive plates that electrode pair is answered. As a result, can improve conductive plate is bonded in semiconductor devices The mass production of lip-deep operation and raising semiconductor device.
The second, in the manufacture method of semiconductor device of the present invention, at bonding conductive plate and leading In the operation of line, by each conductive plate of solder attach and lead. For example lead with the conduct of Cu line Line. By doing like this, can realize the worker that omits terminal conjunction method fully at semiconductor surface Order. As a result, can not give semiconductor devices because the impact that the impact of terminal conjunction method causes, Can increase substantially product property. Again, because when bonding can utilize the self-adjusting of scolder The property effect is so can be bonded in lead and conductive plate on the desired position.
The 3rd, in the manufacture method of semiconductor device of the present invention, at bonding conductive plate and leading In the operation of line, with terminal conjunction method bond each conductive plate and lead. At this moment, have and leading The feature of the enterprising line lead bonding method of electroplax. By doing like this, because when using terminal conjunction method, Conductive plate as buffer board, is not caused owing to terminal conjunction method so can directly not give electrode Impact. As a result, reduced owing to the impact of the impact of using terminal conjunction method to semiconductor devices, Thereby can improve significantly product property.
The 4th, in the manufacture method of semiconductor device of the present invention, have and be connected a plurality of electric currents of forming on the semiconductor device surface on the conductive plate by electrode and control electrode, connect the join domain on the pedestal and the feature of conductive plate with lead.By doing like this, even if how many 1 bonding position relation and their height relationships of organizing a performance seat and semiconductor device has error with respect to designing, because lead has flexibility, ductility etc. are so also can deal with this error neatly.As a result, can be by raising operation and a large amount of productivitys such as allowed band that enlarge pedestal thickness.
Claims (9)
1. the manufacture method of semiconductor device, its feature is that it possesses
Preparation has at least one first type surface, and a plurality of holes that have from be arranged on the insulating barrier that above-mentioned first type surface forms expose the operation of a plurality of electric currents of a part by the semiconductor device of electrode and control electrode respectively,
Prepare a conductive plate, from with the above-mentioned conductive plate of adhesive surface etching of above-mentioned semiconductor device, on above-mentioned adhesive surface, form concavo-convex, after being bonded in above-mentioned conductive plate on the above-mentioned semiconductor device surface, carry out etching from the adhesive surface of above-mentioned conductive plate and opposite face, the raised part of remaining above-mentioned conductive plate, and make their each self-separations operation and
The lead that preparation is made of electric conducting material, the operation that above-mentioned lead and the above-mentioned conductive plate that separates are coupled together.
2. the manufacture method of the semiconductor device of claim 1 record, its feature be a plurality of above-mentioned electric current that forms on the above-mentioned semiconductor device by electrode and control electrode on protuberance with each above-mentioned conductive plate corresponding like that from the above-mentioned conductive plate of adhesive surface etching, it is above-mentioned concavo-convex that above-mentioned conductive plate is formed on adhesive surface.
3. the manufacture method of semiconductor device of claim 1 or claim 2 record, its feature is an attached solder on the adhesive surface of above-mentioned conductive plate protuberance, accordingly each electric current of above-mentioned semiconductor device is bondd by electrode and control electrode and raised part.
4. the manufacture method of the semiconductor device of claim 1 record, its feature is that above-mentioned conductive plate is to be made of copper coin.
5. the manufacture method of the semiconductor device of claim 1 record, its feature is that above-mentioned lead is a copper cash, by scolder above-mentioned lead and independently above-mentioned conductive plate on semiconductor device surface is coupled together.
6. the manufacture method of the semiconductor device of claim 5 record, its feature is at least one adhesive surface of above-mentioned lead or above-mentioned conductive plate, implements to reach the plating that lubricant nature is a purpose of being stained with of scolder.
7. the manufacture method of the semiconductor device of claim 6 record, its feature is to be the plating scolder at above-mentioned plating, and is gold-plated, silver-plated or plating vanadium.
8. the manufacture method of the semiconductor device of claim 1 record, its feature is that above-mentioned lead is gold thread or aluminum steel, by terminal conjunction method above-mentioned lead and independently above-mentioned conductive plate on semiconductor device surface is coupled together.
9. claim 1, the manufacture method of the semiconductor device of claim 5 or claim 8 record, its feature is to be formed for the taking-up conductive region of above-mentioned electric current by electrode and control electrode respectively in the above-mentioned semiconductor device outside, by above-mentioned lead above-mentioned conductive plate is electrically connected with above-mentioned taking-up conductive region.
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| US9305876B2 (en) * | 2013-02-01 | 2016-04-05 | Infineon Technologies Austria Ag | Device including a semiconductor chip and wires |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0691176B2 (en) * | 1989-12-07 | 1994-11-14 | 株式会社東芝 | High power semiconductor device |
| JP3491414B2 (en) * | 1995-11-08 | 2004-01-26 | 三菱電機株式会社 | Circuit board |
| EP0782201B1 (en) * | 1995-12-28 | 2000-08-30 | STMicroelectronics S.r.l. | MOS-technology power device integrated structure |
| JP3499392B2 (en) * | 1997-02-12 | 2004-02-23 | 沖電気工業株式会社 | Semiconductor device |
| EP0927433B1 (en) * | 1997-07-19 | 2005-11-16 | Koninklijke Philips Electronics N.V. | Semiconductor device assemblies and circuits |
-
2002
- 2002-02-27 JP JP2002051994A patent/JP2003258180A/en active Pending
-
2003
- 2003-01-24 CN CNB031033512A patent/CN1257544C/en not_active Expired - Fee Related
- 2003-02-27 US US10/374,728 patent/US6841421B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6841421B2 (en) | 2005-01-11 |
| US20030162330A1 (en) | 2003-08-28 |
| JP2003258180A (en) | 2003-09-12 |
| CN1257544C (en) | 2006-05-24 |
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