CN1437271A - Light emitting diode - Google Patents
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- CN1437271A CN1437271A CN02103193A CN02103193A CN1437271A CN 1437271 A CN1437271 A CN 1437271A CN 02103193 A CN02103193 A CN 02103193A CN 02103193 A CN02103193 A CN 02103193A CN 1437271 A CN1437271 A CN 1437271A
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Abstract
The present invention is one kind of high-brightness light-emitting diode. It has ohmic contact layer of p-type GaInP or oxide electrode contact layer of short-period superlattice thin layer with 10 to the power 18 /cm -3 over n-type or p-type doping density. The oxide electrode contact layer made of the special material has the In component regulated properly and thus light absorption amount, greatly raised p-type carrier density, raised light-emitting diode brightness and reduced forward voltage drop. In addition, the present invention discloses one oxide electrode contact layer with netted or column pattern to expose partial current dispersing layer and this can reduce light absorbing area and raise the output light strength of the light-emitting diode without affecting the contact resistance and forward voltage.
Description
Technical field
The invention relates to a kind of light-emitting diode (Light Emitting Diode; LED) structure is particularly relevant for the light emitting diode construction that can promote brightness.
Background technology
At present, light-emitting diode because of its have low production cost, low produce degree of difficulty, light, easy and expansionary characteristics such as good are installed, so be widely used in the daily life aspects such as electronic board, indicator light and inductor for example.Even so, further promote the luminous efficiency of light-emitting diode effectively, be still the lasting target of everybody expectation.
Figure 1 shows that known AlGaInP (AlGaInP) light-emitting diode structure profile.Please refer to Fig. 1, general AlGaInP light-emitting diode is that the mode with Metalorganic chemical vapor deposition (MOCVD:Metal Organic Chemical Vapor Deposition) forms an epitaxial structure on the substrate 10 that is constituted with the n p type gallium arensidep, and this epitaxial structure can comprise the limitation layer (Confining Layer) 14 that constituted with n type AlGaInP in regular turn, with active layer (Active Layer) 16 (claiming that again the center is layer by layer luminous) that AlGaInP was constituted and the limitation layer 18 that is constituted with p type AlGaInP.Subsequently, utilize vapour deposition method to form electrode 30 in substrate 10 back sides again, and on limitation layer 18, form electrode 32, promptly finish the making of general AlGaInP light-emitting diode.In addition,, can below limitation layer 14, add Bragg mirror (Distributed Bragg Reflector) 12 usually, so can make the photon reflection that absorbed by substrate 10 go back to the front and export again in order to improve positive whole luminous intensity.
AlGaInP is a direct gap material, suitably adjusts the ratio of indium and gallium aluminium (In/ (Al+Ga)), can make the lattice constant match of itself and GaAs (GaAs) substrate.Pass through the ratio adjustment of aluminium and gallium again, can make emission wavelength between 550nm (green glow) and 680nm (ruddiness).Because the adjustment of AlGaInP material on element crystalline substance of heap of stone is quite simple and easy, can be easily obtain the luminous wavelength of desire, so be highly suitable for making the light-emitting component of visible region in the mode of linearity.Because the content that strengthens aluminium can increase the energy gap of material, so generally can be with the high AlGaInP of aluminium content as the material of limitation layer 14 with limitation layer 18, limit to the carrier that drops to active layer 16, penetrate combined efficiency with the injection efficiency and the width of cloth that improve carrier, and this is the light-emitting diode of the double-heterostructure (Double Hetero structure) of known tool high-luminous-efficiency.Wherein, the limitation layer 18 of top is big owing to energy gap sends photon energy, can not absorb the light that active layer 16 sends.
When growing up the p type AlGaInP material of limitation layer 18, often be not easy to obtain high mobility characteristic, its carrier concentration be difficult for to improve again, and this makes that the resistance of material is that number is higher (to about 0.5 Ω-cm), to such an extent as to transverse current can't be distributed on the whole crystal grain effectively.And, since the carrier major part only flow into electrode 32 under, carry out recombination luminescence so the active layer 16 of other positions just can't obtain enough carriers.In addition, this kind current crowding phenomenon (CurrentCrowding) can cause most of light that produces to be covered by lighttight electrode 32, and makes most photon reflection return semiconductor body (Bulk) or absorbed by the substrate 10 of extinction.In order to solve this kind shortcoming, known technology development several method, improves the luminous efficiency of light-emitting diode.
Fig. 2 illustrate is another known AlGaInP light-emitting diode structure profile.Please refer to Fig. 2, this structure is 32 at the limitation layer 18 of the p type AlGaInP in Fig. 1 structure and an electrode, adds into an electric current dispersion layer (Current-Spreading Layer) 20.This electric current dispersion layer 20 the more important thing is that it is than AlGaInP can mix higher concentration and the higher mobility of tool except the splendid penetrability of the light tool that active layer 16 is sent.Therefore, it is several that electric current dispersion layer 20 has lower resistance, can make whole crystal grain obtain electric current uniformly.The material that at present general electric current dispersion layer 20 is adopted is based on aluminum gallium arsenide (AlGaAs) and gallium phosphide (GaP).But evenly spread in order to make electric current with the electric current dispersion layer 20 that above-mentioned material was constituted, general thickness demand is tens of microns.For the Metalorganic chemical vapor deposition method of low growth speed, not only the utmost point consumes raw material, and the expenditure of time cost is also considerable.
Fig. 3 illustrate is a known AlGaInP light-emitting diode structure profile again.Please refer to Fig. 3, for the thickness of the electric current dispersion layer 20 that reduces Fig. 2 structure and can keep enough electric current dispersibilities again, introduce printing opacity electric conductive oxidation electrode layer 24 in the known technology to replace the electric current dispersion layer 20 of existing Fig. 2.It is that number is (to about 3 * 10 that the oxide that constitutes this printing opacity electric conductive oxidation electrode layer 24 not only has extremely low resistance
-4Ω-cm), can effectively electric current be scattered in whole crystal grain, and then the luminous efficiency of raising light-emitting diode, and have more good light peneration.The general suitable material that constitutes this printing opacity electric conductive oxidation electrode layer 24 has indium oxide (Indium Oxide), tin oxide (Tin Oxide) and tin indium oxide (Indium Tin Oxide).In order to form good Ohmic contact between the semi-conducting material that makes this printing opacity electric conductive oxidation electrode layer 24 and formation epitaxial structure, and increase the attached outstanding power of this printing opacity electric conductive oxidation electrode layer 24 on semi-conducting material, generally can be before forming this printing opacity electric conductive oxidation electrode layer 24, the p type ohmic contact layer 22 that first growth one deck is highly doped.The thickness of this p type ohmic contact layer 22 needs greater than 500 , and concentration needs greater than 10
18Cm
-3, the material that generally can constitute this p type ohmic contact layer 22 has GaAs (GaAs), gallium phosphide (GaP), or gallium arsenide phosphide lattice constants such as (GaAsP) is more or less the same and the material of narrow energy gap.Above-mentioned printing opacity electric conductive oxidation electrode layer 24 not only improves the phenomenon of current crowding greatly, and the serial resistance of light-emitting diode is reduced, and effectively improves the reliability of element.
Fig. 4 illustrate is the optical indicatrix figure of various different semi-conducting materials.Please refer to Fig. 4, if adopt the material of GaAs p type ohmic contact layer 22 in Fig. 3 structure, then when the emission wavelength of active region than 870nm in short-term, the light absorption of GaAs material is that number hurriedly increases, and the light output intensity of AlGaInP diode (wavelength is between between the 550nm to 680nm) is significantly decayed.In addition, if when adopting gallium phosphide or gallium arsenide phosphide as the material of p type ohmic contact layer 22 in Fig. 3 structure, though the energy gap of this two prong material is big than GaAs, the absorbed photon amount of active region is less, but its impurity activation is difficult for, and p type concentration is often not high, can make printing opacity electric conductive oxidation electrode layer 24 and p type ohmic contact layer 22 be difficult for forming good Ohmic contact, and make the forward voltage of element improve greatly, element application thereby limited.
Summary of the invention
In above-mentioned background of invention, the electric current dispersion layer that known technology adopts thickness to reach tens of microns can expend cost and time, or adopts the p p type gallium arensidep to be used as ohmic contact layer, the effect that more can dimming promotes.Therefore, the present invention provides a kind of light emitting diode construction, can have preferable brightness surface than the known luminescence diode.Another object of the present invention provides a kind of oxidizing electrode contact layer that utilizes other III-V family materials to be constituted, and is known when utilizing GaAs, phosphatization gallium aluminium or gallium phosphide to constitute ohmic contact layer to improve, the shortcoming that is caused.
According to above-described purpose, light-emitting diode of the present invention comprises: a substrate, one of this substrate side have one first electrode, and opposite side has a Bragg mirror; One first type limitation layer is positioned on the Bragg mirror; One active layer is positioned on first type limitation layer; One second type limitation layer is positioned on the active layer; One electric current dispersion layer is positioned on second type limitation layer; One III-V family oxidizing electrode contact layer is positioned on the electric current dispersion layer; One printing opacity electric conductive oxidation electrode layer is positioned on the III-V family oxidizing electrode contact layer; And one second electrode is positioned on the printing opacity electric conductive oxidation electrode layer.In the high brightness LED of the present invention, above-mentioned III-V family oxidizing electrode contact layer can be by one of being made of ohmic contact layer InGaP (InxGa1-xP) material, perhaps, III-V family oxidizing electrode contact layer can be one of tool one high-dopant concentration short period superlattice thin layer and constitutes.In addition, if will increase the light output intensity of light-emitting diode again, then can carry out etching step to above-mentioned III-V family oxidizing electrode contact layer, the figure that makes III-V family oxidizing electrode contact layer have for example netted or column is to expose the part surface of electric current dispersion layer.
High brightness LED of the present invention, utilize the ohmic contact layer or the short period superlattice structure of InGaP, through suitably adjusting the wherein composition of indium composition, even can reach the state of complete printing opacity, in addition, more can utilize selective etch, reduce the extinction area, the brightness of light-emitting diode is promoted again.Utilize high brightness LED of the present invention, have the advantage that has wide range of applications and more accord with the demands of the market.
Description of drawings
Preferred embodiment of the present invention will be aided with following accompanying drawing and do more detailed elaboration in comment backward, wherein:
Fig. 1 illustrate is known AlGaInP light-emitting diode structure profile;
Fig. 2 illustrate is another known AlGaInP light-emitting diode structure profile;
Fig. 3 illustrate is a known AlGaInP light-emitting diode structure profile again;
Fig. 4 illustrate is the optical indicatrix figure of various different semi-conducting materials;
Fig. 5 illustrate is light-emitting diode structure profile of the present invention;
Fig. 6 illustrate is the structure top view of III-V family oxidizing electrode contact layer among Fig. 5; And
Fig. 7 illustrate is the structure top view of III-V family oxidizing electrode contact layer among Fig. 5.
Embodiment
Be that the photon of avoiding active region to send is blocked by positive p type metal in the known technology, and must adopt the gallium phosphide of tens of microns of thickness or the electric current dispersion layer of aluminum gallium arsenide, electric current disperses so that light-emitting diode has significantly.But it is also very consuming time that the electric current dispersion layer that growth thickness is tens of microns not only expends cost, adds the heavy current dispersibility so propose the oxidizing electrode (as: tin indium oxide) of high conduction and high printing opacity in the known technology.For making electric conductive oxidation electrode and semiconductor form the good Ohmic characteristic, known technology also adopts the material of p p type gallium arensidep as ohmic contact layer, but because the energy gap of GaAs is too small, easily absorb the photon that is sent by active region, institute is so that utilize oxidizing electrode to disperse to cause the effect of brightness lifting to have a greatly reduced quality to add heavy current.Have preferable ohm property between electric conductive oxidation electrode and semi-conducting material in order to make, the thickness of ohmic contact layer is about 500 , but the photon that calculates active layers as can be known through theory is by behind the 500 GaAs, and brightness meeting decay one is to twenty percent.Therefore, the present invention discloses a kind of light-emitting diode, can more knownly have higher brightness.
The present invention illustrates its structure with regard to the manufacturing process of light-emitting diode, please refer to Fig. 5, and Fig. 5 illustrate is light-emitting diode structure profile of the present invention.At first, provide the substrate 50 that is for example constituted with the n p type gallium arensidep, the mode with for example Metalorganic chemical vapor deposition forms the required epitaxial structure of light-emitting diode on substrate 50 again.For instance, can be in regular turn on substrate 50, form a Bragg mirror 52, the limitation layer 54 that is for example constituted with n type AlGaInP, for example with the active layer 56 that AlGaInP was constituted, the limitation layer 58 that is for example constituted with p type AlGaInP, and for example with gallium phosphide or electric current dispersion layer 60 that aluminum gallium arsenide was constituted.Wherein, the material of above-mentioned active layer 56 can be littler than limitation layer 54 and limitation layer 58 energy gap, and form two heterogeneous single layer structures or single quantum well (Quantum Well) structure, with the multiple quantum trap structure.
Then, the long-pending one deck III-V family in the present invention Shen on electric current dispersion layer 60 oxidizing electrode contact layer 62 is with the contact layer as the printing opacity electric conductive oxidation electrode layer 66 of follow-up formation.In an embodiment of the present invention, above-mentioned III-V family oxidizing electrode contact layer 62 is for InGaP (InGaP) ohmic contact layer that material was constituted, and wherein preferable InGaP has and reaches 10
18Cm
-3Above P type doping content then can form good conduction interface with printing opacity electric conductive oxidation electrode layer 66, and best p type doping content then is 10
19Cm
-3More than.Perhaps, in another embodiment of the present invention, utilize the short period superlattice thin layer to constitute above-mentioned III-V family oxidizing electrode contact layer 62, and the material of short period superlattice thin layer can be selected from the materials such as gallium phosphide, InGaP, AlGaInP or aluminum gallium arsenide with the doping of n type or the doping of p type, for example n+-InGaP/GaP short period superlattice or p+-InGaP/AlGaAs short period superlattice etc. all belong to scope of the present invention, and wherein the N type short period superlattice thin layer with the tool high-dopant concentration is a preferred construction.But emphasis is above-mentioned short period superlattice thin layer all must have the 1E of reaching
18Cm
-3Above high-dopant concentration, make carrier behind the printing opacity electric conductive oxidation electrode layer 66 of follow-up formation, the mode that can penetrate (Tunneling) by with the III-V family oxidizing electrode contact layer 62 of short period superlattice thin layer formation to having the electric current dispersion layer 60 that the p type mixes.
Then, on above-mentioned III-V family oxidizing electrode contact layer 62, form printing opacity electric conductive oxidation electrode layer 66, behind the electrode 70 at the electrode 72 in evaporation light-emitting diode front and the back side, promptly finish the making of element again.Wherein, the material of above-mentioned printing opacity electric conductive oxidation electrode layer 66 can be selected from tin indium oxide, indium oxide, tin oxide or cadmium tin etc.In addition, because also pretty good conduction and the light transmission of tool of titanium nitride (TiN) material also is applicable in the application of the present invention, to replace known printing opacity electric conductive oxidation electrode layer.More than the selection of two kinds of III-V family oxidizing electrode contact layers 62, the no matter ohmic contact layer of InGaP or the short period superlattice thin layer of tool high-dopant concentration, through suitably adjusting the wherein composition of indium composition, InGaP extinction amount is reduced and p type concentration significantly improves.Therefore, can improve the brightness of light-emitting diode and reduce its forward drop.
In addition, the present invention is bigger for the light output intensity that makes light-emitting diode, in another preferred embodiment of the present invention, be behind the above-mentioned III-V of formation family oxidizing electrode contact layer 62, more carry out optionally etching step, make III-V family oxidizing electrode contact layer 62 tools one pattern, to expose the part surface of electric current dispersion layer 60.For example among Fig. 6, III-V family oxidizing electrode contact layer 62 forms net-like pattern behind etching step, and exposes the electric current dispersion layer 60 of part; In addition, among Fig. 7, III-V family oxidizing electrode contact layer 62 forms several columns behind etching step, so can expose more electric current dispersion layer 60 surfaces, and wherein this column for example is a cylinder.Therefore, in this preferred embodiment of the present invention, can effectively reduce the area of the III-V family oxidizing electrode contact layer 62 that is constituted with ohmic contact layer or short period superlattice thin layer, the part of extinction is diminished, and then improve the brightness of light-emitting diode.It should be noted that, above-mentioned III-V family oxidizing electrode contact layer 62 behind etching step the pattern that forms only for for example, netted, the column structure of other shapes, or the shape that any favourable CURRENT DISTRIBUTION and glazed area increase all can be used among the present invention, the invention is not restricted to this.
The present invention proposes to replace the mode that known GaAs material is used as ohmic contact layer with InGaP (InxGa1-xP) material, it is several that the suitable ratio of adjusting x can significantly reduce light absorption, even for wavelength between the light-emitting diode between the 550nm to 680nm, can reach the state of complete printing opacity.Among this embodiment, the preferred thickness of InGaP ohmic contact layer is about 500 .In addition, the thin layer that the present invention more discloses with short period superlattice constitutes good oxidizing electrode contact layer, as: the superlattice structure in 5 cycles of n+-InGaP/GaP (10 /10 ) etc., suitable adjustment through material composition and doping content, the gross thickness of this short period superlattice thin layer can have quite good light output effect under less than 100 .Moreover, the present invention is for tool still the InGaP ohmic contact layer or the short period superlattice thin layer of extinction influence slightly, do not influencing contact resistance and forward under the voltage condition, can do suitable removing to InGaP ohmic contact layer or short period superlattice thin layer, the area of extinction is reduced, and then improve the light output intensity of light-emitting diode.
High brightness LED provided by the present invention, because of having preferable brightness than the known luminescence diode, so the element application scope is more extensive, more meeting the market requirement.
Understand as the person skilled in the art, the above only is preferred embodiment of the present invention, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the following claim.
Claims (12)
1. a light-emitting diode is characterized in that, comprises at least:
One substrate, a side of this substrate has one first electrode, and the opposite side of this substrate has a Bragg mirror;
One first limitation layer is positioned on this Bragg mirror;
One active layer is positioned on this first limitation layer;
One second limitation layer is positioned on this active layer;
One electric current dispersion layer is positioned on this second limitation layer;
One ohmic contact layer is positioned on this electric current dispersion layer, and wherein, this ohmic contact layer comes down to be made of an InGaP material;
One printing opacity electric conductive oxidation electrode layer is positioned on this ohmic contact layer; And
One second electrode is positioned on this printing opacity electric conductive oxidation electrode layer.
2. light-emitting diode as claimed in claim 1 is characterized in that, wherein above-mentioned ohmic contact layer is to have greater than about 10
18Cm
-3An above p type doping content.
3. light-emitting diode as claimed in claim 1 is characterized in that wherein above-mentioned ohmic contact layer has a pattern, to expose a part of surface of this electric current dispersion layer.
4. light-emitting diode as claimed in claim 3 is characterized in that, wherein above-mentioned pattern be can be selected from netted, can reduce the group that the shape of the area of this ohmic contact layer is formed with column etc.
5. a light-emitting diode is characterized in that, comprises at least:
One substrate, a side of this substrate has one first electrode, and the opposite side of this substrate has a Bragg mirror;
One first limitation layer is positioned on this Bragg mirror;
One active layer is positioned on this first limitation layer;
One second limitation layer is positioned on this active layer;
One electric current dispersion layer is positioned on this second limitation layer;
One short period superlattice thin layer is positioned on this electric current dispersion layer, and wherein this short period superlattice thin layer has a high-dopant concentration;
One printing opacity electric conductive oxidation electrode layer is positioned on this short period superlattice thin layer; And
One second electrode is positioned on this printing opacity electric conductive oxidation electrode layer.
6. light-emitting diode as claimed in claim 5, it is characterized in that, the material of wherein above-mentioned short period superlattice thin layer is to can be selected from a group that is made up of AlGaInP material and aluminum gallium arsenide material, and this short period superlattice thin layer is to be mixed or p type doping either-or by the n type, and wherein this high-dopant concentration of this short period superlattice thin layer is greater than about 10
18Cm
-3More than.
7. light-emitting diode as claimed in claim 5 is characterized in that, wherein above-mentioned short period superlattice thin layer has a pattern, to expose a part of surface of this electric current dispersion layer.
8. light-emitting diode as claimed in claim 7 is characterized in that, wherein above-mentioned pattern is to can be selected from netted and a group that a plurality of column is formed.
9. a light-emitting diode is characterized in that, comprises at least:
One substrate, a side of this substrate has one first electrode, and the opposite side of this substrate has a Bragg mirror;
One first limitation layer is positioned on this Bragg mirror;
One active layer is positioned on this first limitation layer;
One second limitation layer is positioned on this active layer;
One electric current dispersion layer is positioned on this second limitation layer;
One III-V family oxidizing electrode contact layer is positioned on this electric current dispersion layer, and this III-V family oxidizing electrode contact layer is made of a plurality of column, and wherein, this III-V family oxidizing electrode contact layer also exposes a part of surface of this electric current dispersion layer;
One printing opacity electric conductive oxidation electrode layer is positioned on this III-V family oxidizing electrode contact layer; And
One second electrode is positioned on this printing opacity electric conductive oxidation electrode layer.
10. light-emitting diode as claimed in claim 9 is characterized in that, wherein above-mentioned III-V family oxidizing electrode contact layer is to be an ohmic contact layer, and this ohmic contact layer comes down to be made of an InGaP material, and has greater than about 10
18Cm
-3An above p type doping content.
11. light-emitting diode as claimed in claim 9, it is characterized in that, wherein above-mentioned III-V family oxidizing electrode contact layer is for having a short period superlattice thin layer of a high-dopant concentration, the material of this short period superlattice thin layer is to can be selected from a group that is made up of AlGaInP material and aluminum gallium arsenide material, and this short period superlattice thin layer is to be mixed or p type doping either-or by the n type, and wherein this high-dopant concentration is greater than about 10
18Cm
-3More than.
12. light-emitting diode as claimed in claim 9 is characterized in that, wherein above-mentioned column is to be cylinder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02103193A CN1437271A (en) | 2002-02-04 | 2002-02-04 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02103193A CN1437271A (en) | 2002-02-04 | 2002-02-04 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1437271A true CN1437271A (en) | 2003-08-20 |
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ID=27627771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN02103193A Pending CN1437271A (en) | 2002-02-04 | 2002-02-04 | Light emitting diode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330011C (en) * | 2004-12-17 | 2007-08-01 | 北京工业大学 | Low contact resistance low light absorption and full angle high reflectance LED electrode |
| CN100358195C (en) * | 2003-09-29 | 2007-12-26 | 三洋电机株式会社 | Semiconductor light-emitting device |
| CN100428506C (en) * | 2003-10-27 | 2008-10-22 | 三星电机株式会社 | Electrode structure, and semiconductor light-emitting device having the same |
| CN100431183C (en) * | 2005-11-02 | 2008-11-05 | 元砷光电科技股份有限公司 | Vertical type light emitting diode, and fabricating method |
| CN100463244C (en) * | 2004-12-21 | 2009-02-18 | 中国科学院长春光学精密机械与物理研究所 | Organic white light emitting diode in tiny cavity type |
| CN103296045A (en) * | 2012-02-24 | 2013-09-11 | 华夏光股份有限公司 | Light-emitting diode device |
-
2002
- 2002-02-04 CN CN02103193A patent/CN1437271A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100358195C (en) * | 2003-09-29 | 2007-12-26 | 三洋电机株式会社 | Semiconductor light-emitting device |
| CN100428506C (en) * | 2003-10-27 | 2008-10-22 | 三星电机株式会社 | Electrode structure, and semiconductor light-emitting device having the same |
| CN1330011C (en) * | 2004-12-17 | 2007-08-01 | 北京工业大学 | Low contact resistance low light absorption and full angle high reflectance LED electrode |
| CN100463244C (en) * | 2004-12-21 | 2009-02-18 | 中国科学院长春光学精密机械与物理研究所 | Organic white light emitting diode in tiny cavity type |
| CN100431183C (en) * | 2005-11-02 | 2008-11-05 | 元砷光电科技股份有限公司 | Vertical type light emitting diode, and fabricating method |
| CN103296045A (en) * | 2012-02-24 | 2013-09-11 | 华夏光股份有限公司 | Light-emitting diode device |
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