CN1431475A - Self-adapting type micro light detection device with high-sensitivity silicon optical diode - Google Patents
Self-adapting type micro light detection device with high-sensitivity silicon optical diode Download PDFInfo
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- CN1431475A CN1431475A CN 03103996 CN03103996A CN1431475A CN 1431475 A CN1431475 A CN 1431475A CN 03103996 CN03103996 CN 03103996 CN 03103996 A CN03103996 A CN 03103996A CN 1431475 A CN1431475 A CN 1431475A
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Abstract
Based on the silicon optical diode, the device can detect illuminance less than 10 to the power -8 Lx. The silicon optical diode and the magnetifier are installed in the electromagnetic shielding box. The output end of the magnetifier is connected to the input end of the voltage to frequency converter. The decimal data collector with at least 6 digits includes the collection counter, the collection register, the time base generator for the counting gate, the background counter, the background register as well as the OR gate and the full subtracter. The invention provides long-lasting steady work in bad environment, which does not affect the precision, long distance data transmissions well as mini type an low power consumption. The capabilities as of self-adapting and self-starting, satisfy the requirements of no-attendance.
Description
(1) technical field
The present invention relates to a kind of signal supervisory instrument, especially a kind of based on a kind of silicon photo diode can be to being lower than 10
-8The self-adaptation type high sensitivity silicon photo diode low-light pick-up unit that the low-light of Lx illuminance level detects.
(2) background technology
Environmental science and environmental monitoring are emerging scientific research fields.The early stage basic research method that adopts in a large number and use till today is that laboratory → sample is detected with the coherent detection instrument is surveyed in spot sampling → sample censorship.The detection data that this way obtains are results of non real-time.Simultaneously owing to sample the different of mistiming of detection and sampling environment and testing environment, some information of testing sample have been lost even major part is lost.Opposite extreme situations is to treat that test sample information can't break away from site environment at all and exists.Because the fugacity of gas has determined to have only at the scene to seawater or airborne CO with the easily dead property of harmful virus
2Dividing potential drop detects, at the scene to harmful virus of rivers,lakes and seas detect be only significant.
The existing instrument that can carry out spot sampling and detection is that some meet field environmental condition, satisfy the physics commonly used of artificial execute-in-place condition, semiochemical detecting instrument simultaneously, as: deep-sea sampling thief to the detection of flow velocity, salinity, the flow direction, pH meter commonly used, thermometer, hygrometer etc.
We can see to being low to moderate 10
-8The instrument that the low-light of Lx illuminance level detects all is based on the Laboratory Instruments of photomultiplier, as: the flame detector of Varian GC CP-3800 (gas chromatography/VARIAN Oncology Systems), HP6890 GC (gas chromatography/hewlette-packard); ' flow cytometer ' that state-of-the art laser excitation fluorescent pair cell is analyzed (the Epics Altra II/Beckman coulter/ U.S.) etc.Since the opto-electronic conversion sensitivity of silicon photo diode only be several ten thousand of photomultiplier/, actual employing silicon photo diode as photoelectricity testing part to being low to moderate 10
-8The instrument that the low-light of Lx illuminance level detects is not seen report (elegance is fair etc., photoelectric detecting technology, National Defense Industry Press), only exist Analog Devices Inc (ANALOG CORP.) to its integrated transporting discharging gross data (2.6 * 10 of (reference site www.analog.com/Input Bias Currunt Operatiannal Amplifier-AD549/Voltage-to-Freq-uency and Frequency-to-Voltage Converter-AD650) in the application of silicon photo diode
-8Lx is converted into the integrated transporting discharging voltage output of maximum 26 μ V./ to annotate: this gross data exists only in strict laboratory constant temperature and the given testing result of ignoring under the background drift experiment condition.In addition, 26 μ V to 10V full scale voltages being carried out mould/number conversion must be 16 complicated above A/D conversion equipments of system.)。Still environmental science and the in-situs tester device that satisfies spot sampling and long-term unmanned condition in the environmental monitoring field of locating elementary developing stage are blank especially.
Photomultiplier is bulky, easily aging, negative electrode (sensitive surface) is subjected to sharply to descend than sensitivity behind the strong illumination, that is it requires comparatively harsh to working environment.The most fatal is: the photomultiplier that need work under the negative high voltage condition of the 1000V left and right sides, under the on-the-spot testing environment that has higher salinity or acidity, higher humidity, very easily produce arcing and electric leakage between electrode, directly cause the instability of negative high voltage power source work, under the serious situation, will burn high-voltage power supply.For this reason, it and the spot sampling that is not suitable in the environmental science detect requirement with long-term on-the-spot.The detecting instrument that adopts photomultiplier to form is sampled to the scene and the example that detects is detected in vehicle-mounted (or boat-carrying) flow detection system, but it is not spot sampling and detection system on the practical significance, because it can not be worked under situation unattended and on duty, simultaneously, the environment of vehicle-mounted flow detection system is the laboratory environment condition of simulation.
(3) summary of the invention
The present invention aim to provide a kind of can be to being lower than 10
-8The low-light of Lx illuminance level carries out the on-the-spot self-adaptation type high sensitivity silicon photo diode low-light pick-up unit that detects.
Another object of the present invention is at the scene under the harsh environmental conditions, under situation unattended and on duty, at the scene to low-light variable (10
-8～10
-4Lx) carry out feasible, stable for a long time sampling and monitoring.
Self-adaptation type high sensitivity silicon photo diode low-light pick-up unit is provided with silicon photo diode and preposition resistance (Vp/Ip) amplifier of striding of opto-electronic conversion, both are located in the electromagnetic screen box, the electromagnetic screen box is established window, silicon photo diode receives from the outer low-light variable of shielding box window, and silicon photo diode connects the input end of trans-impedance amplifier.
Be provided with electric voltage frequency (V/F) converter, the voltage output end of its voltage signal input termination trans-impedance amplifier.
Be provided with at least 6 decimal system true value data acquisition unit, the true value data acquisition unit is provided with the frequency acquisition counter, gathers register and counting door time-base generator, background frequency counter and background register, or door, full subtracter.The numerical value that background frequency counter and background register are used to finish the drift background reads and memory function.Or door is used to control Refresh Data (the sending number) function of background register.Full subtracter is used for the parallel data that the collection register is deposited is deducted the subtraction of the parallel data of background register.
The frequency signal output terminal of the frequency input end of frequency acquisition counter and the frequency of background frequency counter input termination voltage to frequency converter, the parallel data output termination of frequency acquisition counter is gathered the input end of register, the input end of the parallel data output termination background register of background frequency counter, the parallel data output terminal of gathering register parallel data output terminal and background register connects the input end of full subtracter respectively, the real-time true value output of the image data of full subtracter termination microprocessor.The output terminal of counting door time-base generator connects frequency acquisition counter, background frequency counter respectively, gathers an end of register and two inputs or door, or the external acquisition controlling signal source of another input end of door, or the output termination background register of door.
The present invention is applied to being low to moderate 10 around the restriction silicon photo diode
-8Two key factors that the Lx illuminance detects are handled and are designed: the composition Vp/Ip amplifiers such as silicon photo diode of 1) selecting meticulously and matching each other, electromagnetic interference (EMI) is had fine inhibiting special shielding box, make this opto-electronic conversion prime amplifier can reach the low-light lower limit (10 that detects silicon photo diode self level
-8The Lx level).Simultaneously, adopt unconventional V/F converter (tradition is A/D converter) as the conversion of simulating signal to digital signal, not only possess small-sized, circuit and form characteristic of simple, also have the image data resolution more much higher with the A/D converter of peer's property/price ratio (minimum image data resolution of the present invention can be 120-corresponding to 10
-8The Lx illuminance); 2) work for satisfying under the unattended and unattended condition, design ' the embedding self-adaptation does not have at least 6 decade frequency meters of feedback automatic zero set (AZS) circuit and counts device ' as ' true value data acquisition unit ', replace ' data acquisition unit ' based on the manually-operated reaction type zeroing in scene mode that we can see, be used to realize real-time automatic zero set (AZS) (instrument powers on phase and acquisition function rest periods) function, remove and to comprise that error that temperature all detection system prestages in floating on cause is to detecting the influence of data.The present invention can be applicable under any occasion, is 10 to the low-light variable
-8～10
-4Lx scope, light frequency are the detection of 0～58Hz (higher limit=1 ÷ (2 * π * Rf * 10pF)+0.293 * 144).
Compare with existing checkout equipment, advantage of the present invention is:
1) at the scene under the harsh environmental conditions, reliably and with long-term, stably work.
2) accuracy rate of image data and degree of accuracy do not change with the variation of environmental baseline substantially.
3) self-starting and self-adaptation can satisfy under situation unattended and on duty and work.
4) can satisfy the requirement that long-range data transmits.
5) small-sized, low-power consumption.
(4) description of drawings
Fig. 1 is a theory diagram of the present invention.
Fig. 2 is the circuit theory diagrams of the embodiment of the invention.
(5) embodiment
Following embodiment will the present invention is further illustrated in conjunction with the accompanying drawings.
Be to satisfy requirement to the in-situs tester device, design based on silicon photo diode can be to being low to moderate 10
-8The self-adaptation type high sensitivity silicon photo diode low-light (10 that the low-light of Lx illuminance level detects
-8The Lx level) detection system, employing of the present invention and common laboratory detecting instrument be distinct zeroing principle (the zeroing principle of laboratory detecting instrument is based on manually-operated mode) on mode, method, realizes the volitional check to temperature drift background (all cause the background of temperature drift silicon photo diode, integrated operational amplifier and front end circuit).This in real time from the new technology of return to zero volitional check temperature drift background and time drift background, other technical measures that cooperate the present invention to adopt can guarantee that silicon photo diode is from general detection application (＞10
-4The Lx illuminance) extension is applied to be low to moderate 10
-8The detection of Lx illuminance level.The enforcement of detection system of the present invention not only can provide practical detecting instrument to utilize silicon photo diode to being low to moderate 10
-8The illuminance of Lx detects, and it is adapted under the unattended situation fully simultaneously, at the scene to low-light variable (10
-8To 10
-4Lx) carry out long term monitoring and sampling.
Referring to Fig. 1,2, self-adaptation type high sensitivity silicon photo diode low-light (10
-8The Lx level) theory of constitution of pick-up unit is:
1. preposition resistance (Vp/Ip) high-gain amplifier 1 and electric voltage frequency (V/F) converter 3 of striding of opto-electronic conversion:
Silicon photo diode (S1337 series, Japan shore pine company product) D receives the low-light variables L from shielding box 2 windows, change the photocurrent Ip that characterizes its intensity of illumination (or radiant light power) into, via the active T type of two-stage high resistant, high-gain, the low noise Vp/Ip amplifier that integrated transporting discharging (AD549 type ANALOG company product) is formed, obtain being proportional to the voltage output signal Vp (negative voltage output) of Ip.In the present embodiment, the conversion relation between them is:
Vp＝{Rf×(R
1+R
2)÷R
1}×Ip
＝{10
9×(199K+1K)÷1K}×Ip
＝1.2×10
11×Ip
When adopting S1337-1010B self-adaptation type high sensitivity silicon photo diode low-light pick-up unit type silicon photo diode, obtained by service manual: illuminance is 10
-8During Lx, Ip=-10fA, at this moment
Vp＝1.2×10
11×(-10fA)
＝-1.2(mV)
This shows that said apparatus has high sensitivity and degree of stability.The detectable low-light that is low to moderate silicon photo diode self-noise equivalent power (NEP) level of this device (definition of relevant NEP, can referring to (graceful fair etc., photoelectric detecting technology, National Defense Industry Press)).
The silicon photo diode that adopts is to 10
-8The Lx illuminance has response, and simultaneously it self NEP is less than (or equaling) 10
-8Lx illuminance level.
Integrated transporting discharging AD549 has input offset current lower in the amplifier at the same level, offset voltage and operating noise.In the work of this device, the noise that it self produces is lower than the NEP of S1337 silicon photo diode.
The present invention adopts strict electricity, magnetic shielding technical measures, is used to guarantee that the opto-electronic conversion prime amplifier can not produce extra electric and magnetic interference noise and ' line-frequency induction (50/60Hz) '.
The active T type two-stage amplifier that this device adopts is the most stable a kind of in the high-gain type amplifier, has ' complementation ' effect because it floats background to temperature, can offset the influence that a part of temperature is floated background.
The voltage signal of opto-electronic conversion prime amplifier output is imported in the voltage to frequency converter of being made up of integrated transporting discharging AD650 3.Through integrated transporting discharging AD650, the voltage signal of input changes the numerical frequency signal that is directly proportional with it into, and output is used for frequency counter.In this device, 0～-input voltage of 10V is through the conversion of AD650, obtains the numerical frequency signal of 0～1000.000KHz.Photoelectric Detection lower limit 10 corresponding to native system
-8Lx low-light illumination, the opto-electronic conversion prime amplifier is output as-1.2mV, and then the corresponding output frequency numerical value of AD650 is:
f＝1000.000÷10000×1.2
＝0.120(KHz)
＝120(Hz)
Because the minimum video data resolution of the frequency counter that level adopts behind the native system is 1Hz, for this reason, the image data resolution of this grade very helps computer data and handles and the detail analysis of analytic system to image data up to 120.
Usually, be the design that the process of digital signal all is based on mould/number (A/D converter) to analog-signal transitions.In the present invention, detect lower limit 1.2mV (10V ÷ 4095=2.44mV) if use A/D converter, 12 A/D still can not offer an explanation.More high-order A/D, the P/C ratio, simultaneously, system forms and is tending towards complicated, and based on above reason, the present invention finishes above-mentioned functions and has adopted unconventional V/F converter.
2. 6 decade frequency meters that embed ' self-adaptation does not have feedback automatic zero set (AZS) circuit ' are counted device:
To one 6 (* * * .***; Unit: decade frequency meter KHz) is counted device transformation: increase one tunnel serial/parallel counting unit and 4 decimal system parallel registers giving up most significant digit and lowest order, constitute background frequency counter 4 and background data register 5, the numerical value of finishing the drift background reads and memory function; Add ' or door ' device 6, Refresh Data (the sending number) function of control background register 5; The decimal system full subtracter 7 that adds one 6, the parallel data that 6 decimation registers 9 in the frequency acquisition counter 8 are deposited deducts the subtraction of the parallel data in the background register 5, and (annotate: background register 5 has been given up most significant digit and lowest order, so the data that background register 5 is deposited are sent into full subtracter 7 necessary alignment original positions as subtrahend, most significant digit and lowest order reset), finish the output function of 6 decimal system parallel datas deducting background numerical value.The output terminal of counting door time-base generator 10 connects frequency acquisition counter 8, background frequency counter 4 respectively, gathers an end of register 9 and two inputs or door 6.
, in above-mentioned transformed background frequency counter 8, and be divided into two-way and carry out frequency counting respectively by the frequency signal input of V/F converter 3 output.By schematic diagram as can be known: 1) when the acquisition controlling signal from microprocessor is " 0 ", ' or door ' opened, and two-way counting unit is in duplicate frequency counting state.That is, as counting Men Shiji when be " 1 ", the serial/parallel counter of two-way is counted simultaneously, and two parallel registers keep locking (keep former deposit several constant) state simultaneously; When counting Men Shiji is " 0 ", the locking simultaneously of the serial/parallel counter of two-way, two parallel registers are opened (accept and refresh the data of depositing) simultaneously, and the parallel data that the serial/parallel rolling counters forward of two-way obtains is admitted to respectively in the corresponding parallel register and deposits.Carry out so repeatedly.2) when acquisition controlling signal S1 is " 1 ", ' or door ' locking, the Refresh Data function of the level"1" restriction background register of output, the former data that make the background register deposit keep remaining unchanged during the one state at the acquisition controlling signal.And above-mentioned in addition three unit components continue maintenance 1 because of not being controlled by the acquisition controlling signal) duty constant.
Frequency acquisition counter 8 and background frequency counter 4 are merged into 6 metric true value data acquisition units.According to above-mentioned functional description, when the acquisition controlling signal is " 0 ", (closes light source or award light window, make silicon photo diode when this function attitude, not be subjected to light), 6 metric true value data acquisition units always are 000.000 at the decimal data output valve reading of this function attitude.Obviously, system's implication (practical significance) of this function attitude is: make electrooptical device (silicon photo diode D) not be subjected to the light time (this moment, system acquisition work was closed), to from all " collections " before the true value data acquisition unit to drift error (temperature drift background and time drift background sum), systematic error (the non-zero output bias that exists between ideal circuit and the side circuit), in data acquisition unit, carry out real-time automatic zero set (AZS) work.Because counting Men Shiji is independent of the acquisition controlling signal, as long as system does not carry out collecting work, this real-time automatic zero set (AZS) work will go on always.
When the acquisition controlling signal by " 0 " attitude upset during for one state, start-up system is carried out the data that Photoelectric Detection and acquisition testing arrive.Because the data of background register are subjected to locking, up-to-date drift error value when the data that the background register is deposited will be the acquisition controlling signals by the upset of " 0 " attitude for one state, and during the total system collection, remain unchanged, so in whole image data process, data acquisition unit is except that finishing data collection task, also the data of gathering are deducted the processing of drift background signal, and with " true value " image data S2 output form, the microprocessing systems (single card microcomputer) that flows to the back carries out data storage and transmission.
In sum, native system assert that it is suitable that 6 metric true value data acquisition units are counted device for 6 decade frequency meters that embed ' self-adaptation does not have feedback automatic zero set (AZS) circuit ', because it had both comprised the no feedback form of the image data error that the system drifting background is caused, correction automatically in real time, comprising again and gathering the function that true value detects data.
At last, in real time the automatic zero set (AZS) function is in any non-acquisition time that occurs in after the system power-up, any time in system's " detection " to the image data error amount representing of the influence of nearest, up-to-date environmental variance to whole low-light photodetector system.
In Fig. 2, resistance R 1:1K, R2:119K, R3:14.3K, R4, R7:510, R5:3.6K, R6:250K, Rf:1G; Potentiometer W1:5K, W2:20K; Capacitor C 1～C7:0.1 μ, C8:10P, C9:1000P, C10:51P, C11:1 μ, C12, C13:100 μ, C14, C15:10 μ.
Claims (2)
1, self-adaptation type high sensitivity silicon photo diode low-light pick-up unit, it is characterized in that being provided with the preposition trans-impedance amplifier of silicon photo diode and opto-electronic conversion, both are located in the electromagnetic screen box, the electromagnetic screen box is established window, silicon photo diode is located at electromagnetic screen box window place, and silicon photo diode connects the input end of trans-impedance amplifier; Be provided with voltage to frequency converter, the voltage output end of its voltage signal input termination trans-impedance amplifier; Be provided with at least 6 decimal system true value data acquisition unit, the true value data acquisition unit is provided with the frequency acquisition counter, gathers register and counting door time-base generator, background frequency counter and background register, or door, full subtracter; The frequency signal output terminal of the frequency input end of frequency acquisition counter and the frequency of background frequency counter input termination voltage to frequency converter, the parallel data output termination of frequency acquisition counter is gathered the input end of register, the input end of the parallel data output termination background register of background frequency counter, the parallel data output terminal of gathering register parallel data output terminal and background register connects the input end of full subtracter respectively, the real-time true value output of the image data of full subtracter termination microprocessor; The output terminal of counting door time-base generator connects frequency acquisition counter, background frequency counter respectively, gathers an end of register and two inputs or door, or the external acquisition controlling signal source of another input end of door, or the output termination background register of door.
2, self-adaptation type high sensitivity silicon photo diode low-light pick-up unit as claimed in claim 1 is characterized in that being provided with 6 decimal system true value data acquisition unit.
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|---|---|---|---|
| CN 03103996 CN1259551C (en) | 2003-02-19 | 2003-02-19 | Self-adapting type micro light detection device with high-sensitivity silicon optical diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03103996 CN1259551C (en) | 2003-02-19 | 2003-02-19 | Self-adapting type micro light detection device with high-sensitivity silicon optical diode |
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|---|---|
| CN1431475A true CN1431475A (en) | 2003-07-23 |
| CN1259551C CN1259551C (en) | 2006-06-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9784670B1 (en) | 2014-01-22 | 2017-10-10 | Theranos, Inc. | Unified detection system for fluorometry, luminometry and spectrometry |
| US10014837B2 (en) | 2013-03-15 | 2018-07-03 | Theranos Ip Company, Llc | Femtowatt non-vacuum tube detector assembly |
-
2003
- 2003-02-19 CN CN 03103996 patent/CN1259551C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10014837B2 (en) | 2013-03-15 | 2018-07-03 | Theranos Ip Company, Llc | Femtowatt non-vacuum tube detector assembly |
| CN109752098A (en) * | 2013-03-15 | 2019-05-14 | 赛拉诺斯知识产权有限责任公司 | Fly watt non-real empty pipe detector assembly |
| US10778167B2 (en) | 2013-03-15 | 2020-09-15 | Labrador Diagnostics Llc | Femtowatt non-vacuum tube detector assembly |
| US11309856B2 (en) | 2013-03-15 | 2022-04-19 | Labrador Diagnostics Llc | Femtowatt non-vacuum tube detector assembly |
| US9784670B1 (en) | 2014-01-22 | 2017-10-10 | Theranos, Inc. | Unified detection system for fluorometry, luminometry and spectrometry |
| US9835548B1 (en) | 2014-01-22 | 2017-12-05 | Theranos, Inc. | Unified detection system for fluorometry, luminometry and spectrometry |
| US10845299B2 (en) | 2014-01-22 | 2020-11-24 | Labrador Diagnostics Llc | Unified detection system for fluorometry, luminometry and spectrometry |
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