CN1410833A - Light cover composite and making method of contact hole with same - Google Patents
Light cover composite and making method of contact hole with same Download PDFInfo
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- CN1410833A CN1410833A CN 01136345 CN01136345A CN1410833A CN 1410833 A CN1410833 A CN 1410833A CN 01136345 CN01136345 CN 01136345 CN 01136345 A CN01136345 A CN 01136345A CN 1410833 A CN1410833 A CN 1410833A
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Abstract
The invention discloses the combination of the masks and the method for preparing the contact holes by using the said combination. The combination of the packed mask and the unpacked mask is utilized in forming the contact holes in the semiconductor components. Using the packing and unpacking (PAU) method carries out the exposure of the contact hole. The pattern of the padding hole on the packed mask is set up around the pattern of the contact holes with the preset distance in order to increase the light intensity of the contact hole relevant to the photoresistive so as to increase the depth of focus. The padding holes are covered by using the unpacked mask whose pattern sets up the positions of the corresponding padding holes so as to leave over the contact holes needed.
Description
Technical field
The invention relates to the manufacture method in a kind of light shield combination and contact hole (Contact Hole), particularly relevant for a kind of combination that utilizes structure dress light shield (Packed Mask) and remove light shield (UnpackedMask), with structure dress and releasing (Packing And Unpacking; PAU) mode is made the method in contact hole.
Background technology
In manufacture of semiconductor, little shadow (Photolithography) technology is decision critical dimension (CriticalDimension; CD) Da Xiao key, along with the lifting day by day of semiconductor element integration (Integration), and element live width size dwindles gradually, and is also strict day by day for the requirement of little shadow technology.The developing direction of little shadow technology is towards the resolution (Resolution) that improves optical exposure system, and need use the short light source of wavelength usually for the resolution that will improve optical exposure system.Yet the reduction of optical source wavelength can cause the depth of focus to be dwindled, and for the live width below 0.5 micron, its depth of focus is the difference of topographical surface no better than, is difficult for successfully focusing on.
At present, as element live width dimension reduction to 0.4 optical wavelength (λ)/numerical aperture (NumericalAperture; NA) time, the depth of focus (Depth Of Focus; DOF) then be reduced to 0.2 optical wavelength/numerical value semiaperture (Numerical Half Aperture thereupon; NHA) square grade, wherein numerical aperture is represented the numerical value of the numerical aperture of optical exposure system, and optical wavelength is represented the wavelength of the employed light source of optical exposure system.Yet, be 193 rice how for example, and numerical aperture is under 0.65 NA in optical wavelength, its little shadow design criteria is 0.10 micron, and in order to depict 0.10 micron contact hole pattern, the live width size need be reduced to 0.34 λ/NA, the depth of focus then is reduced to about 0.32 micron, and the depth of focus is quite little.The more shallow depth of focus can cause developer can't develop to photoresistance bottom, and causes the contacting metal lead can't touch element fully, even causes the contacting metal lead to contact with element and form and open circuit.Therefore, cause the electrical degree of stability of element to reduce, cause the processing procedure fiduciary level to descend.
On the other hand, light shield error coefficient (Mask Error Factor; MEF) numerical value is big more, and it is poor more promptly to represent the control of image display quality, and causes the fiduciary level of micro-photographing process to reduce, and wherein the light shield error coefficient is defined as the ratio of the increase variation of video picture size to the increase variation of the target size on the light shield.Yet general light shield error coefficient value is still excessive, and the accuracy of video picture pattern can't meet present processing procedure requirement.
During in view of the contact hole of above-mentioned known manufacturing semiconductor element, in the step of exposure of micro-photographing process, employed light shield has the phenomenon of depth of focus deficiency, and can't video picture to the photoresist layer bottom, and then cause and contact between contacting metal lead and the element not exclusively, even cause between contacting metal lead and the element forming and open circuit, have a strong impact on the electrical degree of stability of semiconductor element.In addition, light shield error coefficient value is still higher, and makes that the image display quality of pattern is relatively poor.
Summary of the invention
One of fundamental purpose of the present invention is for providing a kind of method of using light shield combination manufacturing contact hole, this light shield combination comprises the twice light shield at least, be structure dress light shield and releasing light shield, contact the hole with the structure dress with the mode manufacturing of removing (PAU), wherein be formed with on the structure dress light shield of required contact hole layout (Layout), extra contact hole is set is used as filling hole (Padding Hole), to increase the opening density of structure dress light shield, utilize to remove light shield again, fill out the filling hole that covers on the element to be opened.Therefore, during the Yu Weiying exposure, can promote the depth of focus of the contact hole pattern on the photoresistance.
Another object of the present invention contacts the hole method for a kind of application structure dress light shield is provided with the manufacturing of releasing light shield, increase the depth of focus by structure dress and the mode of removing, make the numerical aperture of optical exposure system that the space of raising be arranged, and along with the raising of numerical aperture, light shield error coefficient (MEF) reduces thereupon gradually, and improve light shield error coefficient value, and then obtain the video picture pattern of higher quality.
A further object of the present invention is for providing a kind of method of using light shield combination manufacturing contact hole, it is the depth of focus that promotes the contact hole in the mode of structure dress and releasing, and the depth of focus that is increased makes for example dim light type phase shift light shield (Attenuated Phase Shifting Mask; APSM), under higher and constant numerical aperture is arranged in pairs or groups utilization alternately, can further reduce light shield error coefficient value.
A further object of the present invention is for providing the combination of the light shield of making the contact hole, this light shield combination comprises structure dress light shield at least and removes light shield, the filling hole pattern that has been formed with required contact hole pattern on the structure dress light shield and has been provided with in addition in order to increase light shield opening density, then be formed with the position corresponding to the position of filling hole pattern on the releasing light shield, and size is slightly larger than the releasing pattern of filling hole pattern.Wherein, also can on the releasing light shield, form the position of position, and size is slightly larger than the releasing pattern of contact hole pattern corresponding to contact hole pattern.Utilize structure to adorn light shield in definition on the photoresistance or formation contact hole and after filling the hole earlier, utilization is removed light shield and is contacted the unlatching in hole or filling up of filling hole again, and only forms required contact hole at last.Because the opening density of structure dress light shield increases, therefore can under numerical aperture that does not change the exposure machine lens systems and light source, deepen the depth of focus.
According to above-described purpose, the present invention more provides a kind of method of using a plurality of contacts of light shield combination manufacturing hole, comprises at least: a base material is provided, wherein has been formed with first photoresist layer on this base material; The first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and these fill hole patterns be positioned at these contact hole patterns around, and a predeterminable range is arranged between the filling hole pattern that these contact hole patterns are adjacent; Define first photoresist layer with the first road light shield, with the contact hole pattern on the first road light shield and fill hole pattern and be transferred on first photoresist layer, and in first photoresist layer, form a plurality of contacts hole and a plurality of fillings hole; Form second photoresist layer and cover on first photoresist layer, and fill up the contact hole in first photoresist layer and fill the hole; The second road light shield is provided, wherein the second road light shield comprises a plurality of releasing patterns at least, and these positions of removing patterns are corresponding to the position of filling hole pattern or corresponding to the position of contact hole pattern, either-or, and the size of releasing pattern is slightly larger than the size of its pairing filling hole pattern or the size of contact hole pattern; And define second photoresist layer with the second road light shield, to open the contact hole in first photoresist layer.
According to above-described purpose, the present invention more provides a kind of method of using a plurality of contacts of light shield combination manufacturing hole, comprises at least: a base material is provided, wherein has been formed with a photoresist layer on this base material, and this photoresist layer is the bipolarity photoresistance; The first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and these fill hole patterns be positioned at these contact hole patterns around, and a predeterminable range is arranged between the filling hole pattern that these contact hole patterns are adjacent; Carry out first step of exposure with the first road light shield, with the contact hole pattern on the first road light shield and fill hole pattern and be transferred on the photoresist layer, and in photoresist layer, form a plurality of contacts hole sub-image and a plurality of fillings hole sub-image; The second road light shield is provided, and wherein the second road light shield comprises a plurality of releasing patterns of position corresponding to the position of filling hole pattern at least, and these sizes of removing pattern are slightly larger than the size of filling hole pattern; Carry out second step of exposure with the second road light shield, wherein the luminous energy intensity of second step of exposure is greater than the energy intensity of first step of exposure, become negativity with the character of impelling photoresist layer, and become the photoresistance that the position of removing pattern corresponds to the photoresist layer position insoluble; And carry out a development step.
According to above-described purpose, the present invention more provides a kind of method of using a plurality of contacts of light shield combination manufacturing hole, comprises at least: a base material is provided, wherein has been formed with a photoresist layer on this base material, and photoresist layer is negative photoresistance; The first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and this first road light shield has transparent background, and these fill hole pattern and these contact hole patterns are opaque, and these fill hole patterns be positioned at these contact hole patterns around, and the filling hole pattern that these contact hole patterns are adjacent between a predeterminable range is arranged; Carry out first step of exposure with the first road light shield, with the contact hole pattern on the first road light shield and fill hole pattern and be transferred on the photoresist layer, and in photoresist layer, form unexposed area, a plurality of contacts hole and unexposed area, a plurality of fillings hole; The second road light shield is provided, wherein the second road light shield comprises a plurality of releasing patterns of position corresponding to the position of filling hole pattern at least, and the second road light shield tool opaque background, and these to remove patterns be transparent, and these sizes of removing patterns are slightly larger than the size of filling hole pattern; Carry out second step of exposure with the second road light shield; And carry out a development step.
According to above-described purpose, the present invention more provides a kind of method of using a plurality of contacts of light shield combination manufacturing hole, comprises at least: a base material is provided, wherein has been formed with first insulation course on this base material; The first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and these fill hole patterns be positioned at these contact hole patterns around, and the filling hole pattern that these contact hole patterns are adjacent between a predeterminable range is arranged; Define first insulation course with the first road light shield, with the contact hole pattern on the first road light shield and fill hole pattern and be transferred on first insulation course, and in first insulation course, form a plurality of contacts hole and a plurality of fillings hole; Form second insulation course and cover on first insulation course, and fill up the contact hole in first insulation course and fill the hole, wherein second insulation course and first insulation course sit on the top of the other, and do not influence first insulation course when utilizing etchant to remove second insulation course; The second road light shield is provided, and wherein the second road light shield comprises a plurality of releasing patterns of position corresponding to the position of contact hole pattern at least, and these sizes of removing pattern are slightly larger than the size of contact hole pattern; And define second insulation course with the second road light shield, to open the contact hole in first insulation course.
According to above-described purpose, it is a kind of in order to make the light shield combination in contact hole that the present invention more provides, and comprises at least: structure dress light shield wherein comprises a plurality of contact hole patterns and a plurality of filling hole pattern on this structure dress light shield at least; And the releasing light shield, wherein this removes on light shield and comprises a plurality of releasing patterns at least, and these remove the position of the position of patterns corresponding to the filling hole pattern on the structure dress light shield, and these sizes of removing patterns are slightly larger than the size of filling hole pattern.
Description of drawings
Preferred embodiment of the present invention will be aided with following accompanying drawing and do more detailed elaboration in comment backward, wherein:
Fig. 1 is the top view that illustrates the structure dress light shield of a preferred embodiment of the present invention;
Fig. 2 to Fig. 4 is the layout moulding process flow diagram that illustrates the structure dress light shield of a preferred embodiment of the present invention;
Fig. 5 is the top view that illustrates the releasing light shield of a preferred embodiment of the present invention, and this removes has the releasing pattern of a plurality of positions corresponding to the position of the filling hole pattern on the structure dress light shield on the light shield;
Fig. 6 is the top view that illustrates the releasing light shield of a preferred embodiment of the present invention, and this removes has the releasing pattern of a plurality of positions corresponding to the position of the contact hole pattern on the structure dress light shield on the light shield;
Fig. 7 to Figure 10 is the moulding process flow diagram that illustrates the contact hole of first preferred embodiment of the present invention;
Figure 11 to Figure 14 is the moulding process flow diagram that illustrates the contact hole of second preferred embodiment of the present invention;
Figure 15 to Figure 18 is the moulding process flow diagram that illustrates the contact hole of the 3rd preferred embodiment of the present invention;
Figure 19 to Figure 22 is the moulding process flow diagram that illustrates the contact hole of the 4th preferred embodiment of the present invention; And
Figure 23 to Figure 26 is the moulding process flow diagram that illustrates the contact hole of the 5th preferred embodiment of the present invention.
Embodiment
The present invention discloses a kind of light shield combination and uses this light shield combination and make the method in contact hole, the method is utilization twice light shields, be structure dress light shield and remove light shield, the contact hole of making semiconductor element, and increase the depth of focus by the aperture opening ratio that improves structure dress light shield.In order to make narration of the present invention more detailed and complete, can be with reference to the diagram of following description and cooperation Fig. 1 to Figure 26.
Please refer to Fig. 1, its illustrate is the top view of the structure dress light shield of a preferred embodiment of the present invention, and this structure dress light shield 100 is the first road light shield used in the present invention.On this structure dress light shield 100, include a plurality of required contact hole patterns 102 and a plurality of filling hole pattern 104 at least.When utilizing structure dress light shield 100 to expose with the design transfer on it to photoresist layer (not illustrating), filling hole pattern 104 can increase the exposure intensity of adjacent contact hole pattern 102 on photoresistance, and deepens the depth of focus of exposure.The layout moulding flow process of this structure dress light shield 100, please refer to Fig. 2 to Fig. 4 illustrates, in Fig. 2, be formed with a plurality of contact hole patterns 102 earlier on the structure dress light shield 100, and in order to improve the exposure intensity of contact hole pattern 102, around contact hole pattern 102, be provided with and fill hole pattern 104, the size of wherein filling hole pattern 104 approximates the size of contact hole pattern 102, and between contact hole pattern 102 and the adjacent filling hole pattern 104 predeterminable range 106 is arranged, the size of this predeterminable range 106 is approximately between between 1 times and 2 times of the side 108 of contact hole pattern 102.In addition, in this embodiment, upper end, lower end, left end and right-hand member around each contact hole pattern 102 is provided with one and fills hole pattern 104, yet the quantity of filling hole pattern 104 is to decide as circumstances require, for example if existing another pattern on every side of a contact hole pattern 102, the contact hole pattern 102 of left end for example, then the left end of contact hole pattern 102 need not to be provided with extra opening again.That is to say that these fill hole patterns 104 can surround the set that each contact hole pattern 102 and contact hole pattern 102 are formed, either-or.Above-mentioned filling hole pattern 104 position and quantity are set only in order to illustrate, the present invention is not limited to this.
After 104 settings of the filling hole pattern around each contact hole pattern 102 are finished, form layout as shown in Figure 3.Have overlapping phenomenon to each other owing to fill hole pattern 104, step is set, therefore overlapping filling hole pattern 104 is combined into bigger pattern, and form layout as shown in Figure 4 in order to simplify.
Please refer to Fig. 5 and Fig. 6, its illustrate is the top view of the releasing light shield of a preferred embodiment of the present invention, and this removes light shield is the second road light shield used in the present invention.Wherein, the releasing light shield 110 that Fig. 5 illustrated comprises a plurality of releasing patterns 112 at least, these positions of removing pattern 112 are the positions corresponding to the filling hole pattern 104 on the structure dress light shield 100 among Fig. 1, and the size of removing pattern 112 is slightly larger than the size of filling hole pattern 104 approximately, so that structure dress light shield 100 and the some errors of relative position tolerable of removing light shield 110.In addition, the releasing light shield 120 that Fig. 6 illustrated comprises a plurality of releasing patterns 122 at least, and these positions of removing pattern 122 are the positions corresponding to the contact hole pattern 102 on the structure dress light shield 100 among the 1st figure, and the size of removing pattern 122 is slightly larger than the size of contact hole pattern 102 approximately, makes structure dress light shield 100 allow some errors with the relative position of removing light shield 120 equally.
Above-mentioned light shield can be divided into two classes, and when light shield had opaque dark background, position pattern thereon was transparent, and when light shield had transparent background, then position pattern thereon was opaque.Light shield of the present invention can be according to the difference of required and the photoresistance that adopted, and selects the light shield of tool different background.For example, when light shield tool dark background and required pattern when being transparent, photoresist layer should be selected positive photoresistance for use, and when light shield tool transparent background and required pattern when being opaque, photoresist layer should be selected negative photoresistance for use.
The present invention utilizes the first road light shield of Fig. 1 earlier in the mode of structure dress and releasing, i.e. structure dress light shield 100, form the contact hole and fill the hole, utilize the second road light shield of Fig. 5 or Fig. 6 again, promptly remove light shield 110 or remove light shield 120, optionally established filling hole is filled up.The following stated is to reach the embodiment of structure dress of the present invention and disarmed mode, only for illustrating, the invention is not restricted to this, and any utilization structure dress and disarmed mode reach the method that improves the depth of focus, all should be within the scope of the present invention.
Please refer to Fig. 7 to Figure 10, it is the moulding process flow diagram that illustrates the contact hole of first preferred embodiment of the present invention, and this embodiment is a purpose of utilizing two-layer photoresistance to reach the structure dress and remove.At first, provide semi-conductive base material 200, utilize the mode of for example rotating coat (Spin Coating) to form first photoresist layer 202 again and cover on the base material 200.Then, utilize the first road light shield, it is the structure dress light shield 100 of Fig. 1, carry out micro-photographing process, after step of exposure and development (Development) step, in first photoresist layer 202, form and fill hole 204 and contact hole 206, and expose the base material 200 of part, form structure as shown in Figure 8.Owing to be provided with around the contact hole pattern 102 on the first road light shield 100 and fill hole pattern 104, therefore be projected to the light of first photoresist layer 202 via filling hole pattern 104, can strengthen via filling hole pattern 104 adjacent contact hole patterns 102 being projected to the luminous energy intensity of first photoresist layer 202, and increase the depth of focus in contact 206 zones, hole in first photoresist layer 202.
Please refer to Fig. 9, after filling hole 204 and 206 formation of contact hole, utilize for example roasting firmly (HardBake) mode that first photoresist layer 202 is carried out a cure step, or first photoresist layer 202 exposed once more, make first photoresist layer 202 produce link (Crosslinking), strengthen first photoresist layer, 202 structures, to preserve formed pattern in first photoresist layer 202.Be coated with second photoresist layer 208 that does not influence first photoresist layer 202 again and cover base material 200, first photoresist layer 202, fill on hole 204 and the contact hole 206, and fill up and fill hole 204 and contact hole 206.Subsequently, utilize the second road light shield, it is the releasing light shield 110 of Fig. 5, carry out micro-photographing process once more, wherein, remove light shield 110 and have dark background when second photoresist layer 208 during for negative photoresistance, and it is transparent removing pattern 112, and when second photoresist layer 208 is positive photoresistance, removes light shield 110 and have transparent background, and releasing pattern 112 is opaque.Owing to remove the position of the position of the releasing pattern 112 on the light shield 110 corresponding to the filling hole pattern 104 on the structure dress light shield 100 of Fig. 1, and the size of removing pattern 112 is slightly larger than the size of filling hole pattern 104 approximately, so structure dress light shield 100 and the some errors of relative position tolerable of removing light shield 110.When carrying out the exposure of second photoresist layer 208 to remove light shield 110, when second photoresist layer 208 is negative photoresistance, light transmission is removed pattern 112 and is projected on second photoresist layer 208, and the exposure area can contain lid 204 zones, whole filling hole, and makes second photoresist layer 208 in this zone produce link; And when second photoresist layer 208 is positive photoresistance, removes pattern 112 and can block light, and can not exposed in 204 zones, whole filling hole.So, when follow-up development step is carried out, second photoresist layer 208 of filling on 204 zones, hole can not be dissolved in developer, remaining second photoresist layer 208 then can be dissolved in developer, and the photoresistance that will cover on the contact hole 206 removes, open contact hole 206 once more, form structure as shown in figure 10.
Please refer to Figure 11 to Figure 14, it is the moulding process flow diagram that illustrates the contact hole of second preferred embodiment of the present invention, the purpose that this embodiment utilizes two-layer photoresistance to reach the structure dress and remove equally.At first, forming first photoresist layer 232 in for example rotation mode of coating covers on the semi-conductive base material 230, as shown in figure 11.Please refer to Figure 12, utilize the first road light shield again, structure dress light shield 100 promptly shown in Figure 1 carries out micro-photographing process, after step of exposure and development step, forms in first photoresist layer 232 and fills hole 234 and contact hole 236, and expose the base material 230 of part.Because be provided with around the contact hole pattern 102 on the structure dress light shield 100 and fill hole pattern 104, the luminous energy intensity that therefore is projected to 236 zones, contact hole of first photoresist layer 232 increases, and improves the depth of focus of first photoresist layer 232 on contact 236 zones, hole.
After filling hole 234 and 236 formation of contact hole, utilize for example hard bake mode that first photoresist layer 232 is carried out a cure step, or once more to 232 exposures of first photoresist layer, make first photoresist layer 232 produce link, strengthen first photoresist layer, 232 structures, to keep the pattern that is formed in first photoresist layer 232.Be coated with second photoresist layer 238 that does not influence first photoresist layer 232 again and cover base material 230, first photoresist layer 232, fill on hole 234 and the contact hole 236, and fill up and fill hole 234 and contact hole 236, formation structure as shown in figure 13.At this moment, utilize the second road light shield, it is the releasing light shield 120 of Fig. 6, carry out micro-photographing process once more, owing to remove the position of the position of the releasing pattern 122 on the light shield 120 corresponding to the contact hole pattern 102 on the structure dress light shield 100 of Fig. 1, and the size of removing pattern 122 is slightly larger than the size of contact hole pattern 102 approximately, makes structure adorn light shield 100 and the some errors of relative position tolerable of removing light shield 120.Therefore carry out the exposure of second photoresist layer 238 to remove light shield 120, and when second photoresist layer 238 is positive photoresistance, remove light shield 120 and have dark background, and it is transparent removing pattern 122, light transmission is removed pattern 122 and when being projected to second photoresist layer 238, the exposure area can contain lid 236 zones, whole contact hole; And when second photoresist layer 238 during for negative photoresistance, remove light shield 120 and have transparent background, and to remove pattern 122 be opaque, removes pattern 122 meetings light trap is lived, and can not exposed in 236 zones, whole contact hole.Therefore when follow-up development step is carried out, can remove the photoresistance on the contact hole 236, open, form structure as shown in figure 14 and will contact hole 236.
Please refer to Figure 15 to Figure 18, it is the moulding process flow diagram that illustrates the contact hole of the 3rd preferred embodiment of the present invention, and this embodiment utilizes one deck bipolarity photoresistance to make the contact hole.Earlier on base material 250, the mode of utilizing for example rotation to coat covers one deck photoresist layer 252, wherein photoresist layer 252 is the bipolarity photoresistance, this bipolarity photoresistance is under normal conditions of exposure, its characteristic is as positive photoresistance, and under or the situation that exposure frequency is more higher in luminous energy, its characteristic is then as negative photoresistance.Then, with the first road light shield of tool dark background, promptly the structure of Fig. 1 dress light shield 100 carries out first step of exposure under normal conditions of exposure, fills hole sub-image 254 and contact hole sub-image 256 and form in photoresist layer 252, as shown in figure 16.
Subsequently,, and utilize luminous energy strong or be different from the employed luminous energy of first step of exposure, photoresist layer 252 is carried out second step of exposure with the second road light shield.Wherein, when the second road light shield is the releasing light shield 110 of Fig. 5, removes light shield 110 and have dark background, and it is transparent removing pattern 112, and when the second road light shield is the releasing light shield 120 of the 6th figure, removes light shield 120 and have transparent background, and releasing pattern 122 is opaque.At this moment, when the second selected road light shield is when removing light shield 110, light can see through removes pattern 112, and be incident upon the surf zone of the filling hole sub-image 254 of photoresist layer 252, and when the second selected road light shield is releasing light shield 120, light can be disengaged pattern 122 and block, and makes light can not be incident upon the surf zone of the contact hole sub-image 256 of photoresist layer 252.At this moment, for the bipolarity photoresistance of the surf zone of filling hole sub-image 254, the luminous energy that second step of exposure is throwed can make its character as the negative photoresistance, and produces chain interface 258, structure as shown in figure 17.Wherein, second step of exposure luminous energy of throwing only needs to produce chain interface 258 at surf zone and can prevent that developer from invading.Then, carry out development step, remove, and in photoresist layer 252, form contact hole 260, as shown in figure 18 will contact hole sub-image 256.Use the described method of this embodiment to form the contact hole 260 with preferable depth of focus, its processing procedure is comparatively simple.
Please refer to Figure 19 to Figure 22, it is the moulding process flow diagram that illustrates the contact hole of the 4th preferred embodiment of the present invention, and this embodiment equally only uses one deck photoresistance to make required contact hole, and the photoresistance that is adopted is negative photoresistance.At first, on base material 270, the mode of utilizing for example rotation to coat covers one deck photoresist layer 272, and wherein photoresist layer 272 is negative photoresistance.With the first road light shield of tool transparent background, promptly the structure of Fig. 1 dress light shield 100 carries out first step of exposure, fills unexposed area, hole 274 and contact unexposed area, hole 276 and form in photoresist layer 272, structure as shown in figure 20 again.
Then, utilize the second road light shield that photoresist layer 272 is carried out second step of exposure.Wherein, when the second road light shield is the releasing light shield 110 of Fig. 5, removes light shield 110 and have dark background, and it is transparent removing pattern 112, and when the second road light shield is the releasing light shield 120 of Fig. 6, removes light shield 120 and have transparent background, and releasing pattern 122 is opaque.At this moment, when the second selected road light shield is when removing light shield 110, owing to remove the position of the releasing pattern 112 on the light shield 110 are positions of adorning the filling hole pattern 104 of light shield 100 corresponding to structure, and the size of removing pattern 112 is slightly larger than the size of filling hole pattern 104 approximately, so the light that second step of exposure is throwed can be radiated on the unexposed area, filling hole 274 of photoresist layer 272, and make that filling unexposed area, hole 274 exposes, when the second selected road light shield is when removing light shield 120, owing to remove the position of the releasing pattern 122 on the light shield 120 are positions of adorning the contact hole pattern 102 of light shield 100 corresponding to structure, and the size of removing pattern 122 is slightly larger than the size of filling hole pattern 102 approximately, therefore the light that throws of second step of exposure can be disengaged pattern 122 and blocks, and make contact unexposed area, hole 276 not expose, form the structure shown in the 21st figure equally.After filling 274 exposures of unexposed area, hole, carry out a development step, remove with the photoresistance that will contact unexposed area, hole 276, and form contact hole 278, as shown in figure 22.
Please refer to Figure 23 to Figure 26, it is the moulding process flow diagram that illustrates the contact hole of the 5th preferred embodiment of the present invention.Forming first insulation course 292 covers on the base material 290, utilize for example little shadow and etch process again, and with the first road light shield, it is the structure dress light shield 100 of Fig. 1, define first insulation course 292, and form filling hole 294 and contact hole 296 at first insulation course 292, and expose the some of base material 290, form structure as shown in figure 24.Then, forming second insulation course 298 covers first insulation course 292, base material 290, fills on hole 294 and the contact hole 296, and fill up and fill hole 294 and contact hole 296, as shown in figure 25, the step that wherein forms first insulation course 292 and second insulation course 298 can adopt for example chemical vapour deposition technique (ChemicalVapor Deposition; CVD), sputter (Sputtering) sedimentation or method of spin coating etc.In addition, second insulation course 298 and first insulation course 292 are to select the material that sits on the top of the other for use, and utilize when for example etchant removes second insulation course 298 of part, can't influence first insulation course 292.Subsequently, please refer to Figure 26, utilize for example little shadow and etch process, and with the second road light shield, promptly the releasing light shield 110 of Fig. 5 defines second insulation course 298,, and open contact hole 296 once more with second insulation course, 298 materials in the selective removal contact hole 296.
An advantage of the present invention is exactly that a kind of light shield combination is being provided, it is made up of structure dress light shield and releasing light shield, utilize the filling hole pattern of the extra setting of institute on the structure dress light shield to increase the depth of focus, but so electrical degree of stability of lift elements, and can take into account the fiduciary level of video picture pattern, improve process rate.
Another advantage of the present invention is exactly that a kind of method of using light shield combination manufacturing contact hole is being provided, use by the twice light shield, increase the other opening density of contact hole pattern of the first road light shield, utilize the second road light shield again, fill out the filling hole that covers on the element to be opened or open the contact hole.Therefore, during the Yu Weiying exposure, can under numerical aperture that does not change optical exposure system and optical source wavelength, promote the depth of focus of the contact hole pattern on the photoresistance, reduce light shield error coefficient value, and then the accuracy that improves design transfer.
Understand as the person skilled in the art, the above only is preferred embodiment of the present invention, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the following claim.
Claims (57)
1. light shield combination, wherein this light shield combination is in order to making a plurality of contacts hole, it is characterized in that, and this light shield combination comprises at least:
One first road light shield, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and each those contact hole pattern separately or is in groups filled hole patterns by those and is surrounded, and those are filled and have a predeterminable range between hole patterns and adjacent those contact hole patterns; And
One second road light shield, wherein this second road light shield comprises a plurality of releasing patterns at least, and those remove the position of the position of pattern corresponding to those filling hole patterns of this first road light shield, and those sizes of removing patterns are slightly larger than the size that those fill hole patterns approximately.
2. light shield combination as claimed in claim 1 is characterized in that wherein the background of this first road light shield is a dark background.
3. light shield combination as claimed in claim 2 is characterized in that, wherein those contact hole patterns and those filling hole patterns are transparent.
4. light shield combination as claimed in claim 1 is characterized in that wherein the background of this first road light shield is a transparent background.
5. light shield combination as claimed in claim 4 is characterized in that, wherein those contact hole patterns and those filling hole patterns are opaque.
6. light shield combination as claimed in claim 1 is characterized in that wherein the background of this second road light shield is a dark background.
7. light shield combination as claimed in claim 6 is characterized in that, wherein those releasing patterns are transparent.
8. light shield combination as claimed in claim 1 is characterized in that wherein the background of this second road light shield is a transparent background.
9. light shield combination as claimed in claim 8 is characterized in that, wherein those releasing patterns are opaque.
10. light shield as claimed in claim 1 combination is characterized in that, wherein the size of this predeterminable range is approximately between between 1 times to 2 times an of side of those contact hole patterns.
11. light shield combination, wherein this light shield combination is in order to making a plurality of contacts hole, it is characterized in that, and this light shield combination comprises at least:
One first road light shield, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and each those contact hole pattern separately or is in groups filled hole patterns by those and is surrounded, and those are filled and have a predeterminable range between hole patterns and adjacent those contact hole patterns; And
One second road light shield, wherein this second road light shield comprises a plurality of releasing patterns at least, and those remove the position of the position of pattern corresponding to those contact hole patterns of this first road light shield, and those sizes of removing pattern are slightly larger than the size of those contact hole patterns approximately.
12. light shield combination as claimed in claim 11 is characterized in that wherein the background of this first road light shield is a dark background.
13. light shield combination as claimed in claim 12 is characterized in that, wherein those contact hole patterns and those filling hole patterns are transparent.
14. light shield combination as claimed in claim 11 is characterized in that wherein the background of this first road light shield is a transparent background.
15. light shield combination as claimed in claim 14 is characterized in that, wherein those contact hole patterns and those filling hole patterns are opaque.
16. light shield combination as claimed in claim 11 is characterized in that wherein the background of this second road light shield is a dark background.
17. light shield combination as claimed in claim 16 is characterized in that, wherein those releasing patterns are transparent.
18. light shield combination as claimed in claim 11 is characterized in that wherein the background of this second road light shield is a transparent background.
19. light shield combination as claimed in claim 18 is characterized in that, wherein those releasing patterns are opaque.
20. light shield as claimed in claim 11 combination is characterized in that, wherein the size of this predeterminable range is approximately between between 1 times to 2 times an of side of those contact hole patterns.
21. a manufacture method that contacts the hole, wherein this method is to use light shield combination, it is characterized in that, and this light shield combination comprises one first road light shield and one second road light shield at least, and this method comprises at least:
One base material is provided, wherein has been formed with one first photoresist layer on this base material;
This first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and each those contact hole pattern separately or is in groups filled hole patterns by those and is surrounded, and those are filled and have a predeterminable range between hole patterns and adjacent those contact hole patterns;
Define this first photoresist layer with this first road light shield, use that those contact hole patterns on this first road light shield and those filling hole patterns are transferred on this first photoresist layer, and in this first photoresist layer, form a plurality of contacts hole and a plurality of fillings hole;
Form one second photoresist layer and cover on this first photoresist layer, this base material, those contact holes and those filling holes, and fill up those contact holes and those filling holes;
This second road light shield is provided, and wherein this second road light shield comprises a plurality of releasing patterns at least; And
Define this second photoresist layer with this second road light shield.
22. the manufacture method in contact as claimed in claim 21 hole is characterized in that, wherein this first road light shield is a structure dress light shield.
23. the manufacture method as claim 21 a described contact hole is characterized in that, wherein this second road light shield is a releasing light shield.
24. the manufacture method in contact as claimed in claim 21 hole is characterized in that, wherein the size of this predeterminable range is approximately between between 1 times to 2 times an of side of those contact hole patterns.
25. the manufacture method in contact as claimed in claim 21 hole is characterized in that, wherein form the step of this second photoresist layer before, also comprise this first photoresist layer carried out a hard roasting step.
26. the manufacture method in contact as claimed in claim 21 hole is characterized in that, wherein form the step of this second photoresist layer before, also comprise to this first photoresist layer carry out one the link step.
27. the manufacture method in contact as claimed in claim 21 hole is characterized in that, wherein this second photoresist layer is positive photoresistance.
28. the manufacture method in contact as claimed in claim 27 hole is characterized in that, wherein those remove the position of the position of pattern corresponding to those contact hole patterns, and those sizes of removing pattern are slightly larger than the size of those contact hole patterns approximately.
29. the manufacture method in contact as claimed in claim 28 hole is characterized in that, wherein the background of this second road light shield is a dark background, and those releasing patterns are transparent.
30. the manufacture method in contact as claimed in claim 27 hole is characterized in that, wherein the position of hole pattern is filled corresponding to those in those positions of removing pattern, and those sizes of removing pattern are slightly larger than the size that those fill hole pattern approximately.
31. the manufacture method in contact as claimed in claim 30 hole is characterized in that, wherein the background of this second road light shield is a transparent background, and those releasing patterns are opaque.
32. the manufacture method in contact as claimed in claim 21 hole is characterized in that, wherein this second photoresist layer is negative photoresistance.
33. the manufacture method in contact as claimed in claim 32 hole is characterized in that, wherein those remove the position of the position of pattern corresponding to those contact hole patterns, and those sizes of removing pattern are slightly larger than the size of those contact hole patterns approximately.
34. the manufacture method in contact as claimed in claim 33 hole is characterized in that, wherein the background of this second road light shield is a transparent background, and those releasing patterns are opaque.
35. the manufacture method in contact as claimed in claim 32 hole is characterized in that, wherein the position of hole pattern is filled corresponding to those in those positions of removing pattern, and those sizes of removing pattern are slightly larger than the size that those fill hole pattern approximately.
36. the manufacture method in contact as claimed in claim 35 hole is characterized in that, wherein the background of this second road light shield is a dark background, and those releasing patterns are transparent.
37. a manufacture method that contacts the hole, wherein this method is to use light shield combination, it is characterized in that, and this light shield combination comprises one first road light shield and one second road light shield at least, and this method comprises at least:
One base material is provided, wherein has been formed with a photoresist layer on this base material;
This first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and each those contact hole pattern separately or is in groups filled hole patterns by those and is surrounded, and those are filled and have a predeterminable range between hole patterns and adjacent those contact hole patterns;
With this first road light shield this photoresist layer is carried out one first step of exposure;
This second road light shield is provided, and wherein this second road light shield comprises a plurality of releasing patterns at least; And
With this second road light shield this photoresist layer is carried out one second step of exposure.
38. the manufacture method in contact as claimed in claim 37 hole, wherein this first road light shield is a structure dress light shield.
39. the manufacture method in contact as claimed in claim 37 hole is characterized in that, wherein this second road light shield is a releasing light shield.
40. the manufacture method in contact as claimed in claim 37 hole is characterized in that, wherein the size of this predeterminable range is approximately between 1 times to 2 times of a side of those contact hole patterns.
41. the manufacture method in contact as claimed in claim 37 hole is characterized in that, wherein this photoresist layer is the bipolarity photoresistance.
42. the manufacture method in contact as claimed in claim 41 hole is characterized in that, wherein the luminous energy intensity of this first step of exposure is less than the luminous energy intensity of this second step of exposure.
43. the manufacture method in contact as claimed in claim 41 hole is characterized in that, also is included in when wherein carrying out this first step of exposure and forms a plurality of fillings hole sub-image and a plurality of contacts hole sub-image in this photoresist layer.
44. the manufacture method in contact as claimed in claim 43 hole is characterized in that, wherein the background of this first road light shield is a dark background, and those contact hole patterns and those to fill hole pattern be transparent.
45. the manufacture method in contact as claimed in claim 37 hole is characterized in that, wherein this photoresist layer is negative photoresistance.
46. the manufacture method in contact as claimed in claim 45 hole is characterized in that, wherein the background of this first road light shield is a transparent background, and those contact hole patterns and those to fill hole pattern be opaque.
47. the manufacture method in contact as claimed in claim 45 hole is characterized in that, also is included in when wherein carrying out this first step of exposure and forms unexposed area, a plurality of fillings hole and unexposed area, a plurality of contacts hole in this photoresist layer.
48. the manufacture method in contact as claimed in claim 37 hole is characterized in that, wherein those remove the position of the position of pattern corresponding to those contact hole patterns, and those sizes of removing pattern are slightly larger than the size of those contact hole patterns approximately.
49. the manufacture method in contact as claimed in claim 48 hole is characterized in that, wherein the background of this second road light shield is a transparent background, and those releasing patterns are opaque.
50. the manufacture method in contact as claimed in claim 37 hole is characterized in that, wherein the position of hole pattern is filled corresponding to those in those positions of removing pattern, and those sizes of removing pattern are slightly larger than the size that those fill hole pattern approximately.
51. the manufacture method in contact as claimed in claim 50 hole is characterized in that, wherein the background of this second road light shield is a dark background, and those releasing patterns are transparent.
52. a manufacture method that contacts the hole, wherein this method is to use light shield combination, it is characterized in that, and this light shield combination comprises one first road light shield and one second road light shield at least, and this method comprises at least:
One base material is provided, wherein has been formed with one first insulation course on this base material; This first road light shield is provided, wherein this first road light shield comprises a plurality of contact hole patterns and a plurality of filling hole pattern at least, and each those contact hole pattern separately or is in groups filled hole patterns by those and is surrounded, and those are filled and have a predeterminable range between hole patterns and adjacent those contact hole patterns;
Define this first insulation course with this first road light shield, in this first insulation course, to form a plurality of contacts hole and a plurality of fillings hole;
Form one second insulation course and cover on this first insulation course, this base material, those contact holes and those filling holes, and fill up those contact holes and those filling holes;
This second road light shield is provided, and wherein this second road light shield comprises a plurality of releasing patterns at least; And
Define this second insulation course with this second road light shield.
53. the manufacture method in contact as claimed in claim 52 hole is characterized in that, wherein this first road light shield is a structure dress light shield.
54. the manufacture method in contact as claimed in claim 52 hole is characterized in that, wherein this second road light shield is a releasing light shield.
55. the manufacture method in contact as claimed in claim 52 hole is characterized in that, wherein the size of this predeterminable range is approximately between 1 times to 2 times of a side of those contact hole patterns.
56. the manufacture method in contact as claimed in claim 52 hole is characterized in that, wherein those remove the position of the position of pattern corresponding to those contact hole patterns, and those sizes of removing pattern are slightly larger than the size of those contact hole patterns approximately.
57. the manufacture method in contact as claimed in claim 52 hole is characterized in that, wherein the position of hole pattern is filled corresponding to those in those positions of removing pattern, and those sizes of removing pattern are slightly larger than the size that those fill hole pattern approximately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01136345 CN1202443C (en) | 2001-10-10 | 2001-10-10 | Light cover composite and making method of contact hole with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01136345 CN1202443C (en) | 2001-10-10 | 2001-10-10 | Light cover composite and making method of contact hole with same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1410833A true CN1410833A (en) | 2003-04-16 |
| CN1202443C CN1202443C (en) | 2005-05-18 |
Family
ID=4673599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01136345 Expired - Lifetime CN1202443C (en) | 2001-10-10 | 2001-10-10 | Light cover composite and making method of contact hole with same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1202443C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378983C (en) * | 2004-06-14 | 2008-04-02 | 台湾积体电路制造股份有限公司 | Semiconductor unit |
| CN105807559A (en) * | 2014-12-30 | 2016-07-27 | 展讯通信（上海）有限公司 | Combined mask |
| CN105807553A (en) * | 2014-12-30 | 2016-07-27 | 展讯通信（上海）有限公司 | Combined mask able to reduce manufacturing cost |
-
2001
- 2001-10-10 CN CN 01136345 patent/CN1202443C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378983C (en) * | 2004-06-14 | 2008-04-02 | 台湾积体电路制造股份有限公司 | Semiconductor unit |
| CN105807559A (en) * | 2014-12-30 | 2016-07-27 | 展讯通信（上海）有限公司 | Combined mask |
| CN105807553A (en) * | 2014-12-30 | 2016-07-27 | 展讯通信（上海）有限公司 | Combined mask able to reduce manufacturing cost |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1202443C (en) | 2005-05-18 |
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