CN1405634A - Mask-pattern correction method - Google Patents
Mask-pattern correction method Download PDFInfo
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- CN1405634A CN1405634A CN 02141166 CN02141166A CN1405634A CN 1405634 A CN1405634 A CN 1405634A CN 02141166 CN02141166 CN 02141166 CN 02141166 A CN02141166 A CN 02141166A CN 1405634 A CN1405634 A CN 1405634A
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- pattern
- strip
- revise
- mask
- bearing calibration
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Abstract
A correction method for mask patterns is first of all to provide a third pattern composed of a first strip pattern and a second pattern in which the first strip pattern is connected between the head and end of the second one, then two sides of the first strip pattern are added by an auxiliary pattern to form a first correction apttern. After that part of the first strip pattern is reduced to form a second correction pattern, the dimension of the reduced first strip pattern is the key on of a main pattern then the second correction pattern is modified by an optical adjacent correction method to form a third modified pattern.
Description
Technical field
The present invention is about a kind of photoetching (Photolithography) technology, and particularly about a kind of bearing calibration of mask pattern.
Background technology
Along with the raising of the integrated level of integrated circuit, the component size of whole integrated circuit also must be dwindled thereupon.And in semiconductor technology the most very important said so photoetching process, every and metal-oxide semiconductor (MOS) (Metal-Oxide-Semiconductor; MOS) component structure is relevant, for example: and the pattern of each layer film (Pattern), and be mixed with the zone of impurity (Dopants), all decide by this step of photoetching.For in response to dwindling size of component, some methods that improve the mask resolutions are constantly put forward, as the optical near-correction method (Optical Proximity Correction, OPC) and the phase-shift type mask (Phase Shift Mask, PSM) or the like.
Wherein the purpose of optical near-correction method is the key size deviation phenomenon that is caused because of proximity effect (Proximity Effect) in order to eliminate.Proximity effect is to see through graphic pattern projection on the mask on wafer the time when light beam, makes light beam extended owing to light beam can produce scattering phenomenon on the one hand.On the other hand, the photoresist layer that light beam can see through wafer surface reflected via the semiconductor-based end of wafer again, produced the phenomenon of interfering, therefore can repeated exposure, and change exposure actual on photoresist layer.
Shown in Figure 1A to Fig. 1 D, it illustrates the schematic flow sheet into the bearing calibration of traditional mask pattern.
Please refer to Figure 1A to Figure 1B, provide to have the T shape master pattern 106 that one first strip pattern 102 and one second strip pattern 104 are formed.Afterwards, carry out gate pattern and dwindle (GateShrink) step, be about to part first strip 102 and dwindle to form one first correction pattern 110.And the part first strip pattern 102 reduced parts are the parts that are used for defining the grid of active region, therefore, the size after the part first strip pattern 102 dwindles be gate pattern critical size (Critical Dimension, CD).
Afterwards, please refer to Fig. 1 C, add two auxiliary patterns (Assist Feature) 108,109, revise pattern 112 to form second in 102 both sides of the first strip pattern.
Then, please refer to Fig. 1 D, utilize the optical near-correction method, revising pattern 112 corrections with second becomes the 3rd correction pattern 114.
The bearing calibration of traditional mask pattern is after earlier gate pattern being dwindled, add auxiliary patterns again, to revise the file size (File Size) of pattern 114 quite huge with making the 3rd, make the writing of mask pattern (Writing) with inspect (Inspection) and all must expend the considerable time.
Shown in Figure 2, it illustrates bearing calibration into traditional mask pattern at the photoresist layer top view after exposure technology.
Please refer to Fig. 2, with the 3rd of Fig. 1 D revise pattern 114 as the pattern on the mask to carry out an exposure technology, make design transfer on the mask to photoresist layer 200, and form exposing patterns 202.
Can find that by Fig. 2 traditional method easily forms depression 204 (Necking) in the back formed exposing patterns 202 on photoresist layer 200 that exposes.At this moment because in Fig. 1 D, also discontinuous between auxiliary patterns 108 and the auxiliary patterns 109, therefore, easily form the problem that caves in the exposure back in auxiliary patterns 108,109 intersection positions.
Summary of the invention
Therefore purpose of the present invention just provides a kind of bearing calibration of mask pattern, with the file size of minimizing mask pattern, and the time that writes and inspect of minimizing mask pattern.
Another object of the present invention is for providing a kind of bearing calibration of mask pattern, and the exposing patterns that can effectively avoid forming owing to auxiliary patterns in the classic method has the problem of depression.
A further object of the present invention is for providing a kind of bearing calibration of mask pattern, and improving the resolution of photoetching process, and the critical size that improves element is in the uneven situation in exposure back.
The present invention proposes a kind of bearing calibration of mask pattern, at first has the T shape master pattern that one first strip pattern and one second strip pattern are formed, and wherein the first strip pattern is connected in the stage casing part of this second strip pattern.Then, carry out one first and revise step, add that in the both sides of the first strip pattern auxiliary patterns is to form one first correction pattern.Afterwards, carry out one second and revise step, dwindle the part first strip pattern, revise pattern, be of a size of the critical size of a main pattern after wherein the part first strip pattern dwindles to form one second.Then, carry out one the 3rd and revise step, utilize an optical near-correction method, correction second is revised pattern and is formed one the 3rd correction pattern.
The present invention utilizes earlier after the both sides of element pattern add auxiliary patterns, again main pattern is dwindled,, use two groups auxiliary patterns than classic method because auxiliary patterns only uses one group, can reduce the file size of mask pattern, to reduce the time that writes and inspect of mask pattern.
The present invention utilizes elder generation after the both sides of element pattern add auxiliary patterns, main pattern is dwindled, and can avoid producing on the formed exposing patterns of post-exposure technology the problem that depression is arranged.
The bearing calibration of mask pattern of the present invention not only can improve the resolution of photoetching process, also can improve the uniformity coefficient of critical size pattern.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
Figure 1A to Fig. 1 D is depicted as the schematic flow sheet of the bearing calibration of traditional mask pattern;
The bearing calibration that Figure 2 shows that traditional mask pattern is at the photoresist layer top view after exposure technology;
Fig. 3 A to Fig. 3 D is depicted as the schematic flow sheet according to the bearing calibration of the mask pattern of one embodiment of the present invention; And
Figure 4 shows that bearing calibration according to the mask pattern of one embodiment of the present invention is at the photoresist layer top view after exposure technology.Description of symbols
102,302: the first strip patterns
104,304: the second strip patterns
106,306:T shape master pattern
108,109,308: auxiliary patterns
110,310: the first correction patterns
112,312: the second correction patterns
114,314: the three correction patterns
200,400: photoresist layer
202,402: exposing patterns
204: depression
Embodiment
Shown in Fig. 3 A to Fig. 3 D, it is the schematic flow sheet according to the bearing calibration of the mask pattern of one embodiment of the present invention.
Please refer to Fig. 3 A, at first provide to have the T shape master pattern 306 that one first strip pattern 302 and one second strip pattern 304 are formed.Wherein the first strip master pattern 302 is connected in the stage casing part of the second strip pattern 304.
Afterwards, please refer to Fig. 3 B, carry out one first and revise step, add an auxiliary patterns 308 in the both sides of the first strip pattern 302, revise pattern 310 to form one first, wherein the first correction pattern 310 comprises T shape master pattern 306 and auxiliary patterns 308.And the shape of auxiliary patterns 308 for example is a strip.
Then, please refer to Fig. 3 C, carry out one second and revise step, dwindle the part first strip pattern 302, revise pattern 312 to form one second.Be of a size of the critical size of a main pattern after wherein the part first strip pattern 302 dwindles.For example the first strip pattern 302 part of dwindling is the grid that is used for defining active region, and its size after dwindling is the critical size of gate pattern.
Then, please refer to Fig. 3 D, carry out one the 3rd and revise step, utilize an optical near-correction method, revise second and revise pattern 312, revise pattern 314 to form the 3rd.
The present embodiment utilization is earlier after the both sides of the first strip pattern 302 add auxiliary patterns 308, dwindle the part first strip pattern 302 again, employed auxiliary patterns has only one group, more traditional method is used two groups auxiliary patterns, can make the file size of whole mask pattern reduce many, and its diminishbb file size is to decide according to the pattern complexity on the mask, can reduce by 5% to 10% file size so that the element pattern of present embodiment is about.By the reduction of file size, can significantly reduce the time that writes and inspect of mask pattern.
Shown in Figure 4, its illustrate into according to the bearing calibration of the mask pattern of one embodiment of the present invention at the photoresist layer top view after exposure technology.
Please refer to Fig. 4, with the 3rd of Fig. 3 D revise pattern 314 as the pattern on the mask to carry out an exposure technology, make design transfer on the mask to photoresist layer 400, and form an exposing patterns 402.
Can't be with the formed exposing patterns 402 of present embodiment as being formed with the problem of depression in traditional method.
Comprehensive the above, the present invention has following advantage:
1. the present invention utilizes earlier after the both sides of element pattern add auxiliary patterns, gate pattern is dwindled, owing to only use one group of auxiliary patterns, tradition is used two groups auxiliary patterns again, can reduce the file size of mask pattern, to reduce the time that writes and inspect of mask pattern.
2. the present invention utilizes elder generation after the both sides of element pattern add auxiliary patterns, gate pattern is dwindled again, and can avoid producing on exposing patterns the problem that depression is arranged.
3. the bearing calibration of mask pattern of the present invention not only can improve the resolution of photoetching process, also can improve the uniformity coefficient of critical size pattern.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to qualification the present invention, any insider, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is looked the accompanying Claim book person of defining and is as the criterion.
Claims (7)
1. the bearing calibration of a mask pattern comprises the following steps:
One the 3rd pattern of being made up of one first strip pattern and one second strip pattern is provided, and wherein this first strip pattern is connected in end to end between the two ends of this second strip pattern;
Carry out one first and revise step, add that in the both sides of this first strip pattern an auxiliary patterns is to form one first correction pattern;
Carry out one second and revise step, dwindle this first strip pattern of a part, revise pattern, be of a size of the critical size of a main pattern after wherein this of this part first strip pattern dwindles to form one second; And
Carry out one the 3rd and revise step, utilize an optical near-correction method, revise this and second revise pattern and form one the 3rd and revise pattern.
2. the bearing calibration of mask pattern as claimed in claim 1, wherein this main pattern comprises a gate pattern.
3. the bearing calibration of mask pattern as claimed in claim 1, wherein the shape of this auxiliary patterns comprises strip.
4. the bearing calibration of mask pattern as claimed in claim 1, wherein the 3rd pattern comprises a T type pattern.
5. the bearing calibration of the mask pattern of a grid and its line comprises the following steps:
A T shape master pattern of being made up of one first strip pattern and one second strip pattern is provided, wherein this first strip pattern is connected in the stage casing part of this second strip pattern, and this first strip pattern of a part is to be a grid master pattern;
Carry out one first and revise step, add that in the both sides of this first strip pattern an auxiliary patterns is to form one first correction pattern;
Carry out a gate pattern reduction process, this grid master pattern is dwindled to get a gate pattern, revise pattern and form one second; And
Carry out one second and revise step, utilize an optical near-correction method, revise this and second revise pattern and form one the 3rd and revise pattern.
6. the bearing calibration of mask pattern as claimed in claim 5, wherein the size of this gate pattern is to be a critical size.
7. the bearing calibration of mask pattern as claimed in claim 5, wherein the shape of this auxiliary patterns comprises strip.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/954,933 | 2001-09-18 | ||
| US09/954,933 US6638664B2 (en) | 2001-05-30 | 2001-09-18 | Optical mask correction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1405634A true CN1405634A (en) | 2003-03-26 |
| CN1190708C CN1190708C (en) | 2005-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021411662A Expired - Lifetime CN1190708C (en) | 2001-09-18 | 2002-07-08 | Mask-pattern correction method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1190708C (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294456C (en) * | 2003-10-27 | 2007-01-10 | 国际商业机器公司 | Method for executing photoetching correction based on model |
| CN100397403C (en) * | 2004-11-18 | 2008-06-25 | 国际商业机器公司 | Method for verification of resolution enhancement techniques and optical proximity correction in lithography |
| CN101246306B (en) * | 2007-02-12 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity amending method |
| CN101271280B (en) * | 2007-03-23 | 2010-10-20 | 海力士半导体有限公司 | Lithography method for forming a circuit pattern |
| CN101266402B (en) * | 2007-03-16 | 2010-11-17 | 联华电子股份有限公司 | Mask pattern and its forming method |
| CN101726991B (en) * | 2008-10-24 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | Test method of optical proximity correction and manufacturing method of photomask |
| CN101866883B (en) * | 2009-04-17 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN102792303A (en) * | 2010-03-16 | 2012-11-21 | 国际商业机器公司 | Wavefront engineering of mask data for semiconductor device design |
| CN103218470A (en) * | 2012-01-18 | 2013-07-24 | 国际商业机器公司 | Near-neighbor trimming of dummy fill shapes with built-in optical proximity corrections for semiconductor applications |
| CN104166304A (en) * | 2013-05-17 | 2014-11-26 | 联华电子股份有限公司 | Correction method for auxiliary pattern |
| CN107643651A (en) * | 2017-10-09 | 2018-01-30 | 上海华力微电子有限公司 | A kind of design method of photoetching secondary graphics |
| CN112255882A (en) * | 2020-10-23 | 2021-01-22 | 泉芯集成电路制造(济南)有限公司 | Method for shrinking integrated circuit layout |
-
2002
- 2002-07-08 CN CNB021411662A patent/CN1190708C/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1294456C (en) * | 2003-10-27 | 2007-01-10 | 国际商业机器公司 | Method for executing photoetching correction based on model |
| CN100397403C (en) * | 2004-11-18 | 2008-06-25 | 国际商业机器公司 | Method for verification of resolution enhancement techniques and optical proximity correction in lithography |
| CN101246306B (en) * | 2007-02-12 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity amending method |
| CN101266402B (en) * | 2007-03-16 | 2010-11-17 | 联华电子股份有限公司 | Mask pattern and its forming method |
| CN101271280B (en) * | 2007-03-23 | 2010-10-20 | 海力士半导体有限公司 | Lithography method for forming a circuit pattern |
| CN101726991B (en) * | 2008-10-24 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | Test method of optical proximity correction and manufacturing method of photomask |
| CN101866883B (en) * | 2009-04-17 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN102792303A (en) * | 2010-03-16 | 2012-11-21 | 国际商业机器公司 | Wavefront engineering of mask data for semiconductor device design |
| CN102792303B (en) * | 2010-03-16 | 2015-12-16 | 国际商业机器公司 | For the wavefront engineering of the mask data of semiconductor device design |
| CN103218470A (en) * | 2012-01-18 | 2013-07-24 | 国际商业机器公司 | Near-neighbor trimming of dummy fill shapes with built-in optical proximity corrections for semiconductor applications |
| CN104166304A (en) * | 2013-05-17 | 2014-11-26 | 联华电子股份有限公司 | Correction method for auxiliary pattern |
| CN104166304B (en) * | 2013-05-17 | 2020-01-21 | 联华电子股份有限公司 | Method for correcting auxiliary pattern |
| CN107643651A (en) * | 2017-10-09 | 2018-01-30 | 上海华力微电子有限公司 | A kind of design method of photoetching secondary graphics |
| CN107643651B (en) * | 2017-10-09 | 2021-04-16 | 上海华力微电子有限公司 | Design method of photoetching auxiliary pattern |
| CN112255882A (en) * | 2020-10-23 | 2021-01-22 | 泉芯集成电路制造(济南)有限公司 | Method for shrinking integrated circuit layout |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1190708C (en) | 2005-02-23 |
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Granted publication date: 20050223 |