CN1404140A - Analysis method of repair state of redundant bit in DRAM - Google Patents
Analysis method of repair state of redundant bit in DRAM Download PDFInfo
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- CN1404140A CN1404140A CN02140129.2A CN02140129A CN1404140A CN 1404140 A CN1404140 A CN 1404140A CN 02140129 A CN02140129 A CN 02140129A CN 1404140 A CN1404140 A CN 1404140A
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- 230000008439 repair process Effects 0.000 title claims abstract description 19
- 238000004458 analytical method Methods 0.000 title claims abstract description 11
- 230000002950 deficient Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 239000012141 concentrate Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 238000009418 renovation Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
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Abstract
The analysis method of repair state of redundant bit in DRAM to detect whether the redundant bit to be repaired correctly is to irradiate the chip with one concentrated light beam and then to observe the physical bit image. When the beam is aims at the defected array position, two semi-circuit bright areas will be displayed in the screen. When the beam is aimed at the redundant bit for repairing the damaged array, one bright strip will be displayed in the screen. Based on the position of the bright strip and the two semi-circular bright areas, whether the repair aim is reached correctely may be detected.
Description
Technical field
The present invention relates to a kind of analysis dynamic random access memory (Dynamic RAM, abbreviation DRAM) method, and be particularly related to a kind of analysis dynamic random access memory (Dynamic RAM, be called for short DRAM) redundant digit (Redundancy) and repair (Repair) whether correct method.
Background technology
Array in the common dynamic random access memory (Array) is except in order to the regular array of carrying out action, also comprises being used for the redundant digit of repair-deficiency array.This is because in making the process of dynamic random access memory, and defective (Defect) may take place in array.So-called " redundant digit " is meant at chip (Die) and goes up several ranks (Row) or the files (Column) of making more, these ranks or file be not effect usually, but when the array defectiveness, these redundant digits will be as the alternative of substitutional defect array, and becomes effectively (Active) array.Position distribution and the variation of carrying out the repair-deficiency front and back for array and redundant digit on the explanation chip see also Figure 1A and Figure 1B.
Figure 1A is the array in the chip of existing a kind of dynamic random access memory and the position view of redundant digit.
Please refer to Figure 1A, in chip, comprise regular array (Normal Array) 100 and redundant digit 102.After wafer (Wafer) designs, can carry out proof scheme design (Circuit Design) whether problem is arranged, if occurred defective array (Array 120) 104 o'clock in the array 100, then can go to judge the position (Location) that design defect takes place, carry out the technology that redundant digit is repaired again with specific program.
Figure 1B is the position view after repairing according to array shown in Figure 1A and redundant digit process.
See also Figure 1B, utilize specific program to go to judge the position that design defect takes place, and go to carry out archival of information (File) according to redundant digit rule (Redundancy Rule), after the information of interdependent again shelves goes to repair, just through after repairing, an array in the redundant digit 102 (Redundancy ) 106 can replace this defective array (Array 120) 104 (asking for an interview Figure 1A), script defective array (Array 120) 104 is transformed into effective array (Array 12 ) 108 in the regular array 100 and make, and reaches the purpose of removing defective.
Therefore, when making the dynamic random access memory product, " redundant digit reparation " is the important method that improves acceptance rate and correction of the defect.Above-mentionedly be existing step, yet, tend to find still can exist by defectiveness in the dynamic random access memory after redundant digit repairs carrying out, be good or bad so can't determine circuit design; And also can't learn to have on earth do not have correct repair-deficiency place after repairing, still originally correct array line is replaced reparation with redundant digit, and do not have the problem of fix the defect.If determine whether the redundant digit reparation is complete, just must be through repeating to make dynamic random access memory (DRAM Cell) and constantly testing with the whether wrong trial-and-error method (Try-and-error Method) of checking design, will significantly increase the process time thus and improve the complexity of technology.
In addition, as everyone knows, after solving the redundant digit reparation, can't determine to design that get well or bad, and can't learn that the problem that does not have correct repair-deficiency place is arranged on earth, and can carry out a design test pattern (Design In Test Mode), go to test the redundant digit data (Data) of having repaired, otherwise can only lean on a large amount of data and the laser of repetition (Laser) to go checking, not only time-consuming but also spend the time.Yet this existing test pattern be again because can increase area of chip, so be one to bear greatly for cost.
Summary of the invention
Therefore, the invention provides a kind of analysis dynamic random access memory redundant digit and whether repair correct method, can be behind the redundant digit renovation technique, clear and definite circuit for detecting design is correct and learns to have on earth do not have correct repair-deficiency place, to save the process time, to make technology oversimplify and reduce the technology cost.
In addition, the invention provides a kind of whether correct device of dynamic random access memory redundant digit reparation of analyzing, whether correct, to save the process time, to make technology oversimplify and reduce the technology cost if can utilize this kind device to analyze the reparation of dynamic random access memory redundant digit.
Detecting principle of the present invention mainly is to utilize the characteristic of dynamic random access memory can verify whether the redundant digit reparation is correct.The characteristic of so-called dynamic random access memory is to utilize the convex lens that are positioned between automatic pin survey machine and light source that light source is concentrated on chip, with the aligned array part, light source is concentrated to a bit, and makes this point little of can only shining a fraction of array.In case, then can cause electric leakage (Leakage) situation to increase the weight of when the dynamic random access memory irradiation, make the element of deposit data " 1 " originally, over time, become deposit data " 0 ", Here it is so-called update time (Refresh Time).Utilize test update time to allow the array element of irradiation lose efficacy (Fail), and do not have the array element of irradiation can not lose efficacy (Pass), can on computer screen, see so-called physics bit figure (Physical bit Map).
The invention provides a kind of analysis dynamic random access memory redundant digit and whether repair correct method, be after utilizing the redundant digit renovation technique, whether repair correct method in order to detecting, mainly be to utilize a convection light to be radiated at chip on the wafer, observe the physics bit figure image that is shown in screen after shining then, when the array position of beam alignment defective, screen display goes out two similar semicircular clear zones; And when beam alignment is used for the redundant digit of repairing the array that breaks down, can demonstrate a bright fringes on the screen.By the position of above-mentioned bright fringes and two semicircles, can detect and utilize the redundant digit renovation technique whether correctly to reach the purpose of reparation afterwards.
Whether correct the invention provides a kind of dynamic random access memory redundant digit reparation device of analyzing, its device comprises that an automatic pin surveys machine, a light source and convex lens.Wherein, the prediction chip places on the automatic pin survey machine, and light source is positioned at automatic pin survey machine top, utilizes the convex lens that are positioned between automatic pin survey machine and light source that light source is concentrated on chip, with the array of alignment prediction.
The invention provides a kind of analysis dynamic random access memory redundant digit and whether repair correct method, can be behind the redundant digit renovation technique, whether coordinate correct and the checking defective locations has the design of clear and definite circuit for detecting does not have mistake, to save the process time, to make technology oversimplify and reduce the technology cost.
Description of drawings
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Figure 1A is the array in the chip of existing a kind of dynamic random access memory and the position view of redundant digit;
Figure 1B is the position view after repairing according to array shown in Figure 1A and redundant digit process;
Whether correct Fig. 2 analyze dynamic random access memory redundant digit reparation device schematic diagram according to one embodiment of the present invention a kind of;
Fig. 3 A is the position view according to array in the chip of a kind of dynamic random access memory of one embodiment of the present invention and redundant digit;
Fig. 3 B is the physics bit figure according to the light beam irradiates defective array gained shown in Fig. 3 A;
Fig. 4 A is the position view after repairing according to array shown in Fig. 3 A and redundant digit process;
Fig. 4 B is according to the physics bit figure of the light beam irradiates shown in Fig. 4 A through effective array gained of redundant digit reparation; And
Fig. 4 C is used for the physics bit figure of redundant digit array gained of repair-deficiency array according to the light beam irradiates shown in Fig. 4 A.
Reference numeral is simply described as follows:
100,300: regular array 102,302: redundant digit
104,304: defective array 106,306: the array in the redundant digit
108,308: effective array 200: pin is surveyed machine automatically
202: light source 204: convex lens
206: wafer 208: convection light
310,316,318: point 312: screen
314,320,322: image
Embodiment
Fig. 2 is the device schematic diagram of a kind of analysis dynamic random access memory (Dynamic RAM is called for short DRAM) the redundant digit reparation (Redundancy Repair) according to one embodiment of the present invention.
Please refer to Fig. 2, this device comprises automatic pin survey machine 200, a light source 202 and convex lens 204.Wherein, desire is surveyed wafer (Wafer) 206 and is placed automatic pin to survey on the machine 200, and light source 202 is positioned at automatic pin survey machine 200 tops, utilization is positioned at the convex lens 204 that automatic pin is surveyed 202 of machine 200 and light sources, the convection light 208 that light source 202 is sent concentrates on wafer 206, with array (Array) part in the alignment prediction chip (Die).Use for describing in detail this to analyze the device that dynamic random access memory redundant digit is repaired, analyze the dynamic random access memory redundant digit and whether repair correct method, please refer to Fig. 3 A.
Fig. 3 A is the position view according to array in the chip of a kind of dynamic random access memory of one embodiment of the present invention and redundant digit.
Please refer to Fig. 3 A, in the chip of dynamic random access memory, comprise regular array 300 and redundant digit 302, so-called " redundant digit " 302 is meant the unnecessary arrays of making several ranks (Row) or file (Column) on chip more, and the redundant digit 302 in the present embodiment is arrays of file.
Detecting principle of the present invention mainly is to utilize the characteristic of dynamic random access memory (DRAM Cell) to verify whether the redundant digit reparation is correct.The characteristic of so-called dynamic random access memory is to utilize to be positioned at automatic pin and to survey the convex lens 204 of 202 of machine 200 and light sources convection light 208 is concentrated on wafer 206 (seeing Fig. 2 for details), with array 300 parts in the chip of aiming at dynamic random access memory, convection light 208 is concentrated to a bit, and makes this point little to can only shining a fraction of array 300.
In case, then can cause electric leakage (Leakage) situation to increase the weight of when the dynamic random access memory irradiation, make originally for example element of deposit data " 1 ", over time, become deposit data " 0 ", Here it is so-called update time (Refresh Time).Utilize test update time to allow the array element of irradiation lose efficacy (Fail), and do not have the array element of irradiation can not lose efficacy (Pass), can on computer screen, see so-called physics bit figure (Physical bit Map).
Please continue A with reference to Fig. 3, if occur the array (Array120) 304 o'clock of a defectiveness (Defect) in the array 300, utilize pin shown in Figure 2 to survey the convection light of machine, aligning is radiated at 1: 310 on the array (Array 120) 304 of defective, and the physics bit figure image that is shown in screen after the irradiation please refer to Fig. 3 B.
Fig. 3 B is the physics bit figure according to the light beam irradiates defective array gained shown in Fig. 3 A.
Please refer to Fig. 3 B, the position (asking for an interview Fig. 3 A) of defective array 310 demonstrates a point-like image 314 on understanding corresponding to chip on the screen 312.This point-like image 310 is promptly represented the position of defective array 310.Then, technology can proceed to the step that redundant digit is repaired.And be to describe the present invention in detail to analyze the dynamic random access memory redundant digit and whether repair correct method, please refer to Fig. 4 A to Fig. 4 C.
Fig. 4 A is the position view after repairing according to array shown in Fig. 3 A and redundant digit process.
Please refer to Fig. 4 A, when occurring defective array (Array 120) 304 in the array 300 (asking for an interview Fig. 3 A), can go to judge the position (Location) that design defect takes place, carry out the technology that redundant digit is repaired again with specific program.That is to say, replace this defective array 304 with an array in the redundant digit 302 (Redundancy ) 306, and the defective array (Array120) 304 that makes script in the regular array 300 is transformed into effectively (Active) array (Array 12 ) 308, reaches the purpose of removing defective.
And it is whether correct in order to analyze the redundant digit reparation, at first, the convection light that utilizes pin shown in Figure 2 to survey machine is aimed at and is radiated at 1: 316 on effective array (Array 12 ) 308, in order to the position of the defective array 304 confirming to be repaired by redundant digit, the physics bit figure image that is shown in screen after the irradiation please refer to Fig. 4 B.
Fig. 4 B is according to the physics bit figure of the light beam irradiates shown in Fig. 4 A through effective array gained of redundant digit reparation.
Please refer to Fig. 4 B, the convection light that utilizes pin shown in Figure 2 to survey machine is aimed at (the asking for an interview Fig. 4 A) that is radiated on effective array (Array 12 ) 308 at 1: 316 o'clock, the position of effective array 308 on understanding on the screen 312 corresponding to chip, and demonstrate the circle that a similar centre is broken away, i.e. two semicircle images 320.These two semicircular images 320 are promptly represented the defective array position of having been repaired by redundant digit.Because effectively array 308 is replaced by the redundant digit array in fact, thus light beam irradiates to the position be to belong to the array that not have effect, still whereby image still can not to represent the redundant digit reparation be correct.Therefore, also to compare according to the image that Fig. 4 C is detected.
Then, utilizing convection light to aim at again is radiated in the redundant digit 302, be used for carrying out 1: 318 on the array (Redundancy ) 306 of repair-deficiency array 304, whether correctly in order to confirm redundant digit array (Redundancy ) 306 repair-deficiency array 304, the physics bit figure image that is shown in screen after the irradiation please refer to Fig. 4 C.
Fig. 4 C is used for the physics bit figure of redundant digit array gained of repair-deficiency array according to the light beam irradiates shown in Fig. 4 A.
Please refer to Fig. 4 C, utilize convection light to aim at (the asking for an interview Fig. 4 A) that is radiated on the array (Redundancy ) 306 that is used for carrying out repair-deficiency array 304 (asking for an interview Fig. 3 A) at 1: 318 o'clock, the position of array 306 on understanding on the screen 312 corresponding to chip, and demonstrate a strip image 322.The array position that on behalf of redundant digit array 306, this strip image 322 promptly repaired, if this strip image 322 is just in time in Fig. 3 B between two semicircle images 320, just proof is exactly as substitutional defect array 304 (asking for an interview Fig. 3 A) by the array of light beam irradiates (Redundancy ) 306, making its array that is transformed into effective array (Array 12 ) 308, is correct redundant digit reparation therefore.Otherwise, if this strip image 322 is not in Fig. 3 B between two semicircle images 320, just checking is not a redundant digit array as substitutional defect array 304 (asking for an interview Fig. 3 A) by the array of light beam irradiates (Redundancy ) 306, so be not correct redundant digit reparation.
Feature of the present invention comprises following each point:
1. the present invention can be behind the redundant digit renovation technique, and whether correct clear and definite analysis circuit design (CircuitDesign) is, and the coordinate of checking defective locations has and do not have mistake.
2. whether correct in the present invention if utilizing array on the light beam irradiates chip to analyze the redundant digit reparation, can save the process time, make work simplification.
3. whether correct in the present invention if utilizing array on the light beam irradiates chip to analyze the redundant digit reparation, replaces the existing test pattern (Test Mode) that can increase chip area, so can reduce the technology cost.
Though the present invention with a preferred embodiment openly as above; but it is not in order to limit the present invention; under the situation that does not break away from the spirit and scope of the present invention; those skilled in the art can do a little change and retouching, so protection scope of the present invention should be with appended being as the criterion that claim was limited.
Claims (4)
1. analyze the dynamic random access memory redundant digit and whether repair correct method for one kind, be suitable for verifying whether the defective array on the chip is correctly repaired by a redundant digit array, its step comprises:
Utilize a convection light to shine this defective array;
Observe the physics bit figure that this defective array is two semicircles, in order to confirm the relative position of this defective array;
Utilize this convection light to shine this redundant digit array on this chip; And
Be the position of the physics bit figure of strip according to this redundant digit array, confirm whether this redundant digit array correctly repairs this defective array, wherein
If the physics bit figure that this redundant digit array is strip is among the physics bit figure of two semicircles between two semicircles at this defective array, verify that then this defective array correctly repaired by this redundant digit array; And
If this redundant digit array is the physics bit figure of strip and is among the physics bit figure of two semicircles between two semicircles at this defective array, verify that then this defective array correctly do not repaired by this redundant digit array.
2. whether analysis dynamic random access memory redundant digit as claimed in claim 1 repairs correct method, and wherein this redundant digit array comprises ranks.
3. whether analysis dynamic random access memory redundant digit as claimed in claim 1 repairs correct method, and wherein this redundant digit array comprises file.
4. whether correct analyze dynamic random access memory redundant digit reparation device for one kind, be suitable for verifying whether the defective array on the chip is correctly repaired by the redundant digit array, its device comprises:
One automatic pin is surveyed machine, in order to place this chip;
One light source is positioned at this automatic pin and surveys the machine top, and wherein this light source can be launched a convection light; And
One convex lens are between this light source and this automatic pin survey machine, in order to concentrate this convection light to this chip.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/948,073 US6573524B2 (en) | 2001-08-24 | 2001-09-06 | Method of analyzing DRAM redundancy repair |
| US09/948,073 | 2001-09-06 |
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| Publication Number | Publication Date |
|---|---|
| CN1404140A true CN1404140A (en) | 2003-03-19 |
| CN1190835C CN1190835C (en) | 2005-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021401292A Expired - Fee Related CN1190835C (en) | 2001-09-06 | 2002-07-02 | Analysis method of repair state of redundant bit in DRAM |
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| CN (1) | CN1190835C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104376878A (en) * | 2014-09-15 | 2015-02-25 | 武汉新芯集成电路制造有限公司 | Semiconductor device failure analysis method |
| WO2022037201A1 (en) * | 2020-08-18 | 2022-02-24 | 长鑫存储技术有限公司 | Method and device for repairing fail bits |
| US11791010B2 (en) | 2020-08-18 | 2023-10-17 | Changxin Memory Technologies, Inc. | Method and device for fail bit repairing |
| US11791012B2 (en) | 2021-03-31 | 2023-10-17 | Changxin Memory Technologies, Inc. | Standby circuit dispatch method, apparatus, device and medium |
| US11797371B2 (en) | 2020-08-18 | 2023-10-24 | Changxin Memory Technologies, Inc. | Method and device for determining fail bit repair scheme |
| US11853152B2 (en) | 2020-08-18 | 2023-12-26 | Changxin Memory Technologies, Inc. | Fail bit repair method and device |
| US11881278B2 (en) | 2021-03-31 | 2024-01-23 | Changxin Memory Technologies, Inc. | Redundant circuit assigning method and device, apparatus and medium |
| US11887685B2 (en) | 2020-08-18 | 2024-01-30 | Changxin Memory Technologies, Inc. | Fail Bit repair method and device |
| US11984179B2 (en) | 2021-03-26 | 2024-05-14 | Changxin Memory Technologies, Inc. | Redundant circuit assigning method and device, and medium |
-
2002
- 2002-07-02 CN CNB021401292A patent/CN1190835C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104376878A (en) * | 2014-09-15 | 2015-02-25 | 武汉新芯集成电路制造有限公司 | Semiconductor device failure analysis method |
| CN104376878B (en) * | 2014-09-15 | 2018-08-03 | 武汉新芯集成电路制造有限公司 | A kind of method of semiconductor device failure analysis |
| WO2022037201A1 (en) * | 2020-08-18 | 2022-02-24 | 长鑫存储技术有限公司 | Method and device for repairing fail bits |
| US11791010B2 (en) | 2020-08-18 | 2023-10-17 | Changxin Memory Technologies, Inc. | Method and device for fail bit repairing |
| US11797371B2 (en) | 2020-08-18 | 2023-10-24 | Changxin Memory Technologies, Inc. | Method and device for determining fail bit repair scheme |
| US11853152B2 (en) | 2020-08-18 | 2023-12-26 | Changxin Memory Technologies, Inc. | Fail bit repair method and device |
| US11887685B2 (en) | 2020-08-18 | 2024-01-30 | Changxin Memory Technologies, Inc. | Fail Bit repair method and device |
| US11984179B2 (en) | 2021-03-26 | 2024-05-14 | Changxin Memory Technologies, Inc. | Redundant circuit assigning method and device, and medium |
| US11791012B2 (en) | 2021-03-31 | 2023-10-17 | Changxin Memory Technologies, Inc. | Standby circuit dispatch method, apparatus, device and medium |
| US11881278B2 (en) | 2021-03-31 | 2024-01-23 | Changxin Memory Technologies, Inc. | Redundant circuit assigning method and device, apparatus and medium |
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| Publication number | Publication date |
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| CN1190835C (en) | 2005-02-23 |
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