CN1403853A - Storing capacitance structure for planar display and its forming process - Google Patents
Storing capacitance structure for planar display and its forming process Download PDFInfo
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- CN1403853A CN1403853A CN 02131873 CN02131873A CN1403853A CN 1403853 A CN1403853 A CN 1403853A CN 02131873 CN02131873 CN 02131873 CN 02131873 A CN02131873 A CN 02131873A CN 1403853 A CN1403853 A CN 1403853A
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Abstract
The storing capacitance structure for the main matrix of planar display includes: one lower electrode layer with concave-convex structure; one dielectric layer to cover the lower electrode layer; and one upper electrode layer to cover the dielectric layer. It is formed through providing one base board; forming the lower electrode layer on the base board with concave-convex structure on the upper surface; covering the lower electrode layer with a dielectric layer and covering the dielectric layer with an upper electrode layer.
Description
Technical field
The present invention relates to a kind of storage capacitor structure and forming method thereof, refer to be applied to storage capacitor structure in the principal matrix of flat-panel screens and forming method thereof especially.
Background technology
See also Fig. 1 (a), one element circuit block schematic diagram of one Thin Film Transistor-LCD (TFTLCD), wherein thin film transistor (TFT) 11 is subjected to the control of sweep trace voltage Vs and switches between conducting state and closed condition, data line voltage Vd then is added to the pixel electrode 131 of these liquid crystal 12 both sides when thin film transistor (TFT) 11 is in conducting state, between the common electrode 132, in order to change the ordered state of this liquid crystal 12, and then control the printing opacity degree of this liquid crystal 12, the intensity that the light that makes back side light source 14 be sent arrives in beholder's eye changes, in order to reaching the display effect that light and shade changes, storage capacitors 15 is then in order to the characteristic of stiffener assembly.
And because the capacitance of storage capacitors 15 can influence the picture quality quality, for example, when capacitance too a hour picture be easy to generate flicker (flicker) and cross-talk phenomenons such as (cross-talk), therefore, how to keep enough capacitances necessity when designing and consider.See also Fig. 1 (b) again, the part organigram of common LCD panel of thin-film transistor, substrate 20 left sides are the diagrammatic cross-section of thin film transistor (TFT) structure 21 among the figure, right-hand part then is the diagrammatic cross-section of a capacitor structure 22, it mainly is made of a lower electrode layer 221, a dielectric layer 222 and a upper electrode layer 223, and under the manufacturing technology with present low-temperature polysilicon film transistor (LTPS-TFT), the material of capacitor structure 22 lower electrode layers 221 is a polysilicon, is metal as for 223 of upper electrode layers.
But common means reach the purpose that increases capacitance with the area (for example increasing the length of A line segment among the figure) that strengthens lower electrode layer 221 and upper electrode layer 223 mostly.But find out by knowing among the figure, when strengthening the area of lower electrode layer 221 and upper electrode layer 223 when desire increase capacitance, the area of the transmission region 23 that liquid crystal is controlled will reduce thereupon, so will cause the brightness of display to perform poor, must increase the intensity and increase power of back side light source, cause the power consumption of display integral body to increase, do not meet now low power consumption requirement electronic product.Therefore, how to improve the defective of above-mentioned common means, for developing fundamental purpose of the present invention.
Summary of the invention
The object of the present invention is to provide a kind of storage capacitor structure and forming method thereof that is applied on the flat-panel screens, under the situation that does not increase projected area, increase the interface area between electrode layer and dielectric layer, and then effectively increase the capacitance of this storage capacitors.
Another object of the present invention is to provide a kind of storage capacitor structure and forming method thereof that is applied on the flat-panel screens, except increasing the useful area with etching mode, any mode that increases the degree of roughness of electrode layer and dielectric layer interface all can be used.
The object of the present invention is achieved like this:
The invention discloses a kind of storage capacitor structure, be applied in the principal matrix of a flat-panel screens, this storage capacitor structure comprises: a lower electrode layer, and its upper surface has concaveconvex structure; One dielectric layer is covered in the upper surface of this lower electrode layer; And a upper electrode layer, be covered in this dielectric layer on.
According to above-mentioned conception, storage capacitor structure of the present invention, wherein the material of this lower electrode layer is a polysilicon, the material of this upper electrode layer is a metal.
The invention also discloses a kind of storage capacitor structure formation method, be applied in the manufacture process of a flat-panel screens principal matrix, this method comprises the following steps: to provide a substrate; Form a lower electrode layer in this substrate top, the upper surface of this lower electrode layer has concaveconvex structure; Upper surface in this lower electrode layer covers a dielectric layer; And on the upper surface of this dielectric layer, cover a upper electrode layer.
According to above-mentioned conception, storage capacitor structure formation method of the present invention, wherein the material of this lower electrode layer is a polysilicon, the material of this upper electrode layer is a metal.
According to above-mentioned conception, storage capacitor structure formation method of the present invention, wherein the formation method of this lower electrode layer comprises the following steps: to form an original lower electrode layer in this substrate top; And this original lower electrode layer carried out a light shield lithography manufacture process, the part surface of removing this original lower electrode layer in order to etching, and then form this lower electrode layer with concaveconvex structure.
The present invention also discloses a kind of storage capacitor structure, is applied in the principal matrix of a flat-panel screens, and this storage capacitor structure comprises: a lower electrode layer; One dielectric layer, be covered in this lower electrode layer on, the upper surface of this dielectric layer has concaveconvex structure; And a upper electrode layer, be covered on the upper surface of this dielectric layer.
According to above-mentioned conception, storage capacitor structure of the present invention, wherein the material of this lower electrode layer is a polysilicon, the material of this upper electrode layer is a metal.
The present invention also discloses a kind of storage capacitor structure formation method, is applied in the manufacture process of a flat-panel screens principal matrix, and this method comprises the following steps: to provide a substrate; Form a lower electrode layer in this substrate top; Cover a dielectric layer in going up of this lower electrode layer, the upper surface of this dielectric layer has concaveconvex structure; And on the upper surface of this dielectric layer, cover a upper electrode layer.
According to above-mentioned conception, storage capacitor structure formation method of the present invention, wherein the material of this lower electrode layer is a polysilicon, the material of this upper electrode layer is a metal.
According to above-mentioned conception, storage capacitor structure formation method of the present invention, wherein the formation method of this dielectric layer comprises the following steps: to form an original dielectric layer in this lower electrode layer top; And this original dielectric layer carried out a light shield lithography manufacture process, the part surface of removing this original dielectric layer in order to etching, and then form this dielectric layer with concaveconvex structure.
Description of drawings
The present invention must be able to more deep understanding by following accompanying drawing and detailed description:
Fig. 1 (a) is an element circuit block schematic diagram of a Thin Film Transistor-LCD (TFTLCD);
Fig. 1 (b) is the part organigram of common LCD panel of thin-film transistor;
Fig. 2 (a) (b) (c) is the first preferred embodiment step synoptic diagram of the present invention about the storage capacitors manufacture method in the flat-panel screens;
Fig. 3 (a) (b) (c) is the second preferred embodiment step synoptic diagram of the present invention about the storage capacitors manufacture method in the flat-panel screens;
Fig. 4 (a) is (b) for looking synoptic diagram on the concaveconvex structure embodiment on lower electrode layer in the foregoing description or dielectric layer surface;
Fig. 5 (a) is (c) example schematic for the embodiment of the invention is carried out quantitative test (b).
Each assembly of the present invention lists as follows:
| Thin film transistor (TFT) 11 | Liquid crystal 12 |
| Pixel electrode 131 | Common electrode 132 |
| Back side light source 14 | Storage capacitors 15 |
| | Thin film transistor (TFT) |
| | |
| | |
| | Transparent substrates 30 |
| Original lower electrode layer 31 | Lower electrode layer 32 with concaveconvex structure |
| Dielectric layer 33 | Upper electrode layer 34 |
| | |
| Original | |
Embodiment
(the C=ε * A/d because the capacitance and the electrode area of parallel plate capacitor are proportionate, ε is the dielectric coefficient of dielectric layer, A is an electrode area, d is an electrode separation), thus the present invention develop as Fig. 2 (a) (b) (c) and Fig. 3 (a) (b) the preferred embodiment manufacture method shown in (c) increase the capacitance of storage capacitors.
Please earlier referring to Fig. 2 (a) (b) (c) shown in, prior to forming an original lower electrode layer 31 (shown in Fig. 2 (a)) on the transparent substrates 30, and then this original lower electrode layer 31 carried out a light shield lithography manufacture process, the part surface of removing this original lower electrode layer 31 in order to etching reaches a degree of depth, and then formation has the lower electrode layer 32 (shown in Fig. 2 (b)) of concaveconvex structure, and then cover a dielectric layer 33 and a upper electrode layer 34 in regular turn, form the storage capacitor structure shown in Fig. 2 (c) at last.Thus, this lower electrode layer 32 with concaveconvex structure will cause effective electrode area to increase, and then reach the purpose that increases the storage capacitors value but can not reduce the controlled transmission region area of liquid crystal.
With same idea, also can be prior to forming a lower electrode layer 41 and an original dielectric layer 42 (shown in Fig. 3 (a)) on the transparent substrates 40 in regular turn, and then this original dielectric layer 42 carried out a light shield photolithography process, the part surface of removing this original dielectric layer 42 in order to etching reaches a degree of depth, and then formation has the dielectric layer 43 (shown in Fig. 3 (b)) of concaveconvex structure, and then cover a upper electrode layer 44, form the storage capacitor structure shown in Fig. 3 (c) at last.Thus, this dielectric layer 43 with concaveconvex structure also can be made effective electrode area increase, and then reaches the purpose that increases capacitance but can not reduce the controlled transmission region area of liquid crystal.
See also Fig. 4 (a) (b), look synoptic diagram on the concaveconvex structure embodiment on above-mentioned lower electrode layer or dielectric layer surface, wherein hatched example areas is expressed projection partly.
See also Fig. 5 (a) (b) (c) again, it is the example schematic that quantitative test is carried out in the present invention's conception, calculates for convenience, projection sidewall partly is assumed to be 45 degree, therefore, the concaveconvex structure shown in Fig. 5 (a), reckoning according to following formula can increase by about 0.85% capacitance.
100 microns of the original capacitance values of no concave-convex structure=unit-area capacitance * original area=100 microns * of unit-area capacitance *
Improvement capacitance=capacity plate antenna+marginal electric capacity=unit-area capacitance * equivalent area=unit-area capacitance * (capacity plate antenna area+marginal capacity area) with concaveconvex structure, and capacity plate antenna area=(100 microns * 100 microns)-(52 microns * 2+50 micron * 2)=9796 square microns wherein, and marginal capacity area=(52 microns * 2+50 micron * 2) * 1.414=288.5 square micron, so equivalent area=10084.5 square microns of improvement electric capacity, so increase by about 0.85% capacitance
The reckoning of using similar formula as can be known, the concaveconvex structure of Fig. 5 (b) shown in (c) can increase by about 1.27% and 8.28% capacitance respectively.And from the above, the present invention is under the situation that does not increase projected area, increase the interface area between electrode layer and dielectric layer, and then the capacitance that effectively increases this storage capacitors is reached development fundamental purpose of the present invention really to improve the defective of above-mentioned common means.And except increasing the useful area with etching mode, any mode that increases the degree of roughness of electrode layer and dielectric layer interface all can be used, so the technology of the present invention means can be effectively applied among the flat-panel screens such as Thin Film Transistor-LCD, and under the manufacturing technology with present low-temperature polysilicon film transistor LCD, the material of this lower electrode layer can be finished with polysilicon, then use metal (for example aluminium) as for upper electrode layer, then can be monox or silicon nitride is finished as for dielectric layer.
Claims (10)
1, a kind of storage capacitor structure that is applied on the flat-panel screens is characterized in that, this storage capacitor structure comprises:
One lower electrode layer, its upper surface has concaveconvex structure;
One dielectric layer is covered in the upper surface of this lower electrode layer; And
One upper electrode layer, be covered in this dielectric layer on.
2, the storage capacitor structure that is applied on the flat-panel screens as claimed in claim 1 is characterized in that, the material of this lower electrode layer is a polysilicon, and the material of this upper electrode layer is a metal.
3, a kind of storage capacitors formation method that is applied on the flat-panel screens, this method comprises the following steps:
One substrate is provided;
Form a lower electrode layer in this substrate top, the upper surface of this lower electrode layer has concaveconvex structure;
Upper surface in this lower electrode layer covers a dielectric layer; And
On the upper surface of this dielectric layer, cover a upper electrode layer.
4, the storage capacitor structure formation method that is applied on the flat-panel screens as claimed in claim 3 is characterized in that, the material of this lower electrode layer is a polysilicon, and the material of this upper electrode layer is a metal.
5, the storage capacitor structure formation method that is applied on the flat-panel screens as claimed in claim 3 is characterized in that, the formation method of this lower electrode layer comprises the following steps:
Form an original lower electrode layer in this substrate top; And
This original lower electrode layer is carried out a light shield lithography manufacture process, the part surface of removing this original lower electrode layer in order to etching, and then form this lower electrode layer with concaveconvex structure.
6, a kind of storage capacitor structure that is applied on the flat-panel screens is characterized in that, this storage capacitor structure comprises:
One lower electrode layer;
One dielectric layer, be covered in this lower electrode layer on, the upper surface of this dielectric layer has concaveconvex structure; And
One upper electrode layer is covered on the upper surface of this dielectric layer.
7, the storage capacitor structure that is applied on the flat-panel screens as claimed in claim 6 is characterized in that, the material of this lower electrode layer is a polysilicon, and the material of this upper electrode layer is a metal.
8, a kind of storage capacitor structure formation method that is applied on the flat-panel screens is applied to it is characterized in that in the manufacture process of a flat-panel screens principal matrix that this method comprises the following steps:
One substrate is provided;
Form a lower electrode layer in this substrate top;
Cover a dielectric layer in going up of this lower electrode layer, the upper surface of this dielectric layer has concaveconvex structure; And
On the upper surface of this dielectric layer, cover a upper electrode layer.
9, the storage capacitor structure formation method that is applied on the flat-panel screens as claimed in claim 8 is characterized in that, the material of this lower electrode layer is a polysilicon, and the material of this upper electrode layer is a metal.
10, the storage capacitor structure formation method that is applied on the flat-panel screens as claimed in claim 8 is characterized in that, the formation method of this dielectric layer comprises the following steps:
Form an original dielectric layer in this lower electrode layer top; And
This original dielectric layer is carried out a light shield lithography manufacture process, the part surface of removing this original dielectric layer in order to etching, and then form this dielectric layer with concaveconvex structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131873 CN1403853A (en) | 2002-09-05 | 2002-09-05 | Storing capacitance structure for planar display and its forming process |
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|---|---|---|---|
| CN 02131873 CN1403853A (en) | 2002-09-05 | 2002-09-05 | Storing capacitance structure for planar display and its forming process |
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| CN1403853A true CN1403853A (en) | 2003-03-19 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100381925C (en) * | 2005-03-11 | 2008-04-16 | 友达光电股份有限公司 | Liquid crystal display device and method for mfg. bottom substrate |
| CN101707201B (en) * | 2009-01-19 | 2011-07-20 | 深超光电（深圳）有限公司 | Bottom guide pixel structure |
| CN102024565B (en) * | 2009-09-15 | 2013-01-02 | 财团法人工业技术研究院 | Capacitor structure |
| WO2013013438A1 (en) * | 2011-07-26 | 2013-01-31 | 深圳市华星光电技术有限公司 | Storage capacitor architecture and manufacturing method thereof, and pixel unit |
| CN102023428B (en) * | 2009-09-23 | 2013-05-08 | 北京京东方光电科技有限公司 | TFT-LCD array substrate and method for manufacturing the same |
| US8488299B2 (en) | 2009-07-23 | 2013-07-16 | Industrial Technology Research Institute | Capacitor structure |
| WO2017107236A1 (en) * | 2015-12-21 | 2017-06-29 | 深圳市华星光电技术有限公司 | Pixel unit and array substrate |
| CN110579225A (en) * | 2019-09-11 | 2019-12-17 | 京东方科技集团股份有限公司 | Planar capacitive sensor and manufacturing method thereof |
| CN113345322A (en) * | 2020-03-02 | 2021-09-03 | 元太科技工业股份有限公司 | Wiring structure of display panel |
-
2002
- 2002-09-05 CN CN 02131873 patent/CN1403853A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100381925C (en) * | 2005-03-11 | 2008-04-16 | 友达光电股份有限公司 | Liquid crystal display device and method for mfg. bottom substrate |
| CN101707201B (en) * | 2009-01-19 | 2011-07-20 | 深超光电（深圳）有限公司 | Bottom guide pixel structure |
| US8488299B2 (en) | 2009-07-23 | 2013-07-16 | Industrial Technology Research Institute | Capacitor structure |
| CN102024565B (en) * | 2009-09-15 | 2013-01-02 | 财团法人工业技术研究院 | Capacitor structure |
| CN102023428B (en) * | 2009-09-23 | 2013-05-08 | 北京京东方光电科技有限公司 | TFT-LCD array substrate and method for manufacturing the same |
| WO2013013438A1 (en) * | 2011-07-26 | 2013-01-31 | 深圳市华星光电技术有限公司 | Storage capacitor architecture and manufacturing method thereof, and pixel unit |
| WO2017107236A1 (en) * | 2015-12-21 | 2017-06-29 | 深圳市华星光电技术有限公司 | Pixel unit and array substrate |
| CN110579225A (en) * | 2019-09-11 | 2019-12-17 | 京东方科技集团股份有限公司 | Planar capacitive sensor and manufacturing method thereof |
| CN110579225B (en) * | 2019-09-11 | 2022-02-25 | 京东方科技集团股份有限公司 | Planar capacitive sensor and manufacturing method thereof |
| CN113345322A (en) * | 2020-03-02 | 2021-09-03 | 元太科技工业股份有限公司 | Wiring structure of display panel |
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