CN1400675A - Light emitting diode having scattered current and capable of raising light-emitting area utilization rate - Google Patents
Light emitting diode having scattered current and capable of raising light-emitting area utilization rate Download PDFInfo
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- CN1400675A CN1400675A CN01124982A CN01124982A CN1400675A CN 1400675 A CN1400675 A CN 1400675A CN 01124982 A CN01124982 A CN 01124982A CN 01124982 A CN01124982 A CN 01124982A CN 1400675 A CN1400675 A CN 1400675A
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Abstract
A luminous semiconductor element contains substrate, a first semiconductor structure on it, a luminous structure on first part of the first semiconductor a first contact on a second part of the first semiconductor in which its second part is separated with the first part and the first contact has a first shape. A second semiconductor is on the luminous structure. A transparent contact layer is on the second semiconductor with a cut-off part for exposing part of second semiconductor having second shape and a second situating on cut-off part of the transparent contact layer contacting the second semiconductor with a third shape. The third shape of second contact is matched with transparent contact layer of second shape and first contact of the first shape to provide route adjacent to the several current routes from the first to second contact structure.
Description
Technical field
The relevant a kind of light-emitting diode of the present invention, the light-emitting diode of particularly a kind of scattered current simultaneously and raising light-emitting area utilance.
The 5-2 background of invention:
For light-emitting diode, light-emitting diode (LED) may be the most known by the people, because it is applied on the product miscellaneous, for example scientific instrument, Medical Instruments, modal being to use on consumer products, these light-emitting diodes can be used as the light source of various signals, indicating device, measuring instrument, scale.As the semiconductor light sources of light-emitting diode why so by in a large number as the light source output element, mainly be because they have very long useful life, low power consuming and high reliability degree usually.
Begin in early days since the 1970's, just cause the hig diligence that photophore is used for basic material because of its broad band gap properties with gallium nitride.On the other hand, the substrate that insulation and lattice are misplaced, for example sapphire (sapphire, alundum (Al aluminum oxide, Al
2O
3), because of it has thermally-stabilised and the light transmittance characteristic, and because of still there not being at present the substrate of lattice match, so be widely used in III-nitride brilliant substrate of heap of stone.Propose in United States Patent (USP) 4153905, growing gallium nitride on sapphire substrate is basic light emitting diode construction, and makes corresponding ohmic contact on its n and p type layer, to finish the LED structure of plane formula.Yet the gallium nitride layer that will form p type high conductivity is still very difficult thing; Therefore, the ohmic contact on p type gallium nitride is difficult for making, and the electric current of p type layer also is difficult for scattering.
Recently, the red rugged method that waits people (Nakamura et al.) such as people (Akasaki et al.) and middle village to propose to improve p type gallium nitride conductivity.Yet p type gallium nitride conductivity still falls within after the n type gallium nitride.The result is perhaps as the most common arriving, and it is the top of basic light emitting diode construction that p type gallium nitride is placed in gallium nitride, and the transparent contact layer electrode (contact) on the p type layer is just to become a preferable element designing institute indispensable.For the utilization ratio of emitter surface maximum, n type and p type contact structures are arranged in the wideest position far away as far as possible, promptly on the corner that an element is opposite.
Be shown as the front view that a conventional gallium nitride is the light-emitting diode of base material among Fig. 1.One part of cutting off 117 is arranged in the one p type transparency electrode 115, be beneficial to expose the p type semiconductor layer 113 of part.One routing sees through the part of cutting off 117 with pad (bonding pad) 116 and tightly is bonded on the p type semiconductor layer 113, and and p type transparency electrode 115 being connected on electrical arranged.On the corner location that the part 117 of this cut-out is arranged in farthest with the n type electrode 114 that provided on pad 116 and the n type semiconductor layer 112 from routing.But such contact arrangement has the be jammed shortcoming of (current crowding) of electric current between electrode.The result causes light-emitting area to effectively utilize, and more likely be that life-span of element and transparent contact layer electrode can shorten because electric current is jammed.
Summary of the invention
Main purpose of the present invention is to provide one to have scattered current and the light-emitting diode that improves the light-emitting area utilance.
Another object of the present invention is to provide a light-emitting diode of avoiding electric current to be jammed, utilize the geometry and the relative position of design contact electrode to make that the current path length between contact electrode is close.
A further object of the present invention is to provide the light-emitting diode of a reduction surface state and leakage current, utilizes a protective layer to reduce the situation of the number and the reduction leakage current of surface state.
For achieving the above object, provide a kind of luminescent diode component according to an aspect of the present invention, be characterized in, comprise at least: a substrate; One first semiconductor structure is positioned on the described substrate; One ray structure is positioned on one first part of described first semiconductor structure; One first contact structures are positioned on one second part of described first semiconductor structure, and second of described first semiconductor structure partly partly is separated with described first, and described first contact structures have one first shape; One second semiconductor structure is positioned on the described ray structure; One transparent contact layer is positioned on described second semiconductor structure, and described transparent contact layer has a part of cutting off exposing second semiconductor structure of described part, and has one second shape; And one second contact structures are positioned on the part of cut-out of described transparent contact layer, touch described second semiconductor structure, and has one the 3rd shape, the 3rd shape of described second contact structures has the transparent contact layer of second shape and a relation that described first contact structures with first shape match with described, so as to the close path of several current paths from described first contact structures to described second contact structures is provided.
For achieving the above object, provide a kind of light-emitting diode according to a further aspect of the invention, it is characterized in that, comprise at least; One substrate; One first semiconductor structure is positioned on the substrate; One ray structure is positioned on one first part of first semiconductor structure; One first contact structures are positioned on one second part of first semiconductor structure, and second of first semiconductor structure partly partly is separated with first, and first contact structures have one first shape; One second semiconductor structure is positioned on the ray structure; One transparent contact layer is positioned on second semiconductor structure, and transparent contact layer has a part of cutting off exposing second semiconductor structure of part, and has one second shape; And one second contact structures are positioned on the part of cut-out of transparent contact layer, touch second semiconductor structure, and has one the 3rd shape, the 3rd shape of second contact structures and the transparent contact layer with second shape and have the relation that first contact structures of first shape match are so as to providing the close path of several current paths from first contact structures to the second contact structures.
Adopt such scheme, can utilize the hollow pattern that on transparent contact layer structure, hollows out to block the straight line shortcut path of electric current, reach the purpose of scattered current, increase the utilization rate of light-emitting area simultaneously.
Description of drawings
Fig. 1 is the front elevational schematic of the gallium nitride light-emitting diode in the document in advance;
Fig. 2 is the generalized section of light-emitting diode of the present invention, is included on the transparent contact layer electrode to have hollow pattern;
Fig. 3 to Fig. 4 is the front elevational schematic of the present invention by the light-emitting diode of Fig. 2 of AA ' incision, and the geometry and the relative position of the present invention's two contact structures is described;
Fig. 5 is another generalized section of light-emitting diode of the present invention, illustrates to cover the reliability of a protective layer with lift elements;
Fig. 6 to Fig. 8 is another serial front elevational schematic of light-emitting diode of the present invention, and the geometry and the relative position of the present invention's two contact structures is described;
Fig. 9 is another serial front elevational schematic of light-emitting diode of the present invention, illustrates that n type contact structures place middle mode; And
Figure 10 is the generalized section of Fig. 9 embodiment, illustrates that n type contact structures place middle mode.
Embodiment
The present invention is described in detail as follows with schematic diagram.Need to prove that when the embodiment of the invention was described in detail in detail, the profile part of expression semiconductor structure was carried out the part and amplified in order to explanation not according to general ratio.In addition, in the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
In this preferred embodiment, be that basic element proves with GaN; In any case the present invention should not be limited in these materials.So-called is that basic material means by Al with GaN
XGa
YIn
1-X-YThe N material is made, and wherein X and Y are between 0 and 1.And so-called with GaN be basic light-emitting diode (LED) to refer to a GaN with narrower energy gap be that basic ray structure is between the single or multiple lift of basic structure between the GaN with broad energy gap, have different conductivity at the not homonymy of ray structure.In addition, the present invention except that can be used for the light-emitting diodes pipe range on an insulated substrate, also can be applied in the light-emitting diodes pipe range at other substrates, but structure that can't conducting on the vertical direction, for example GaAs, GaP, Si and SiC.
The present invention adopts the geometry of element and the improvement of contact form to improve the method that electric current disperses.In these embodiments, the ohmic contact of a printing opacity and conduction is placed on the top of the less side of element conductivity; All contact layers all are jammed, strengthen efficient and the useful life that light-emitting area reached and then increased LED by well-designed in order to reduce electric current.Of the present invention being described in detail as follows; In any case the present invention should not be limited among the following embodiment.
Be respectively section of the present invention and front elevational schematic as shown in Figures 2 and 3.One n type gallium nitride structure 12 is formed at an insulated substrate 11, for example on the sapphire substrate.On n type gallium nitride structure 12, be a ray structure 13, then form a p type gallium nitride structure 14.N type and p type gallium nitride all can be gallium nitride individual layer, gallium nitride and aluminium nitride sandwich construction, or in conjunction with the sandwich construction of other combinations.Ray structure can be homogeneous (homogenous) p-n joint, two heterogeneous joint (hetero-junction), single quantum well structures or multiple quantum trap structure.One preferable element structure is included in the multiple quantum trap luminous layer of individual layer n type gallium nitride, an InGaN/GaN on the sapphire substrate 11, and AlGaN/GaN p type layer; Such semiconductor light-emitting-diode is according to so arranging brilliant formation of heap of stone.
Then, this Jingjing sheet of heap of stone will carry out the element processing procedure, and it comprises with flat-top etching (mesa etching), metallization and heat treatment processing procedure formation crystal grain.A transparent contact layer electrode 15, many hollow pattern 16, p type contact structures (comprising conductive electrode and contact layer) 17 are finished in metallization, and n type ohmic contact structure 18.In addition, the heat treatment processing procedure then is the oxidation of finishing transparent contact layer electrode 15, and the tempering of p type contact structures 17 and n type ohmic contact structure 18.With regard to front view, p type contact structures 17 are separated with n type ohmic contact structure 18, just do not have overlapping part up and down in vertical direction.Be stressed that especially the material of transparent contact layer electrode 15 is nickel oxide/gold, magnesium oxide, zinc oxide or vanadic oxide, in preferred embodiment, transparent electrode material is nickel oxide/gold.
Above-mentioned hollow pattern 16 (window) is a key of the present invention, and they can have the function in many foldings path.The first, hollow pattern 16 can be blocked electric current and pass through with shortcut; The second, if they when being designed exactly, between long and the shortest current path, they play the part of the function of balance difference.In fact, transparent contact layer electrode 15 is not a hundred per cent printing opacity, therefore designing hollow pattern 16 provides light directly to penetrate from the coupling of element, and the path that does not have transparent contact layer electrode to stop, like this, the luminous efficiency of element can promote by hollow pattern 16, has good electric current dispersiveness simultaneously.
In addition, the shape of hollow pattern 16, number and position are not limited among the embodiment to be mentioned.It can, also should be various elements and current class and do optimized design.Particularly when p and n type contact structures were arranged at an opposite side, the present invention can bring into play maximum efficient.With reference to Fig. 4, also be a front view, be another embodiment of the present invention, be applied to the LED wafer of square configuration, wherein p type contact structures 17, and n type ohmic contact structure 18 are arranged at a square opposite side.
On the other hand, can further improve the performance of element by reducing surface state.Surface state can utilize a protective layer 19 to cover on the element to reduce leakage current, as shown in Figure 5.There are many materials all can reach the purpose of surface protection.In any case for luminous element, the top layer should described feasible emission light have the optics of height to transmit (optical transmission) in emission wavelength ranges, and, the character of this protective layer be insulation or high impedance.These materials, for example aluminium oxide, silica, silicon nitride, tantalum oxide, titanium oxide, zinc sulphide, fluorite (calcium fluoride, CaF
2), hafnium oxide (hafnium oxide, HfO
2) and zinc oxide etc. can meet the requirements.This protective layer is can be applied among the arbitrary embodiment of the present invention, and follow-up no longer the repetition emphasized and mentioned.
Focus on the hollow pattern that can block electric current from the embodiment of Fig. 2 to 4, its hollow pattern forces electric current to scatter more equably.Then, utilize geometry to reach the purpose of scattered current with introducing another.Be illustrated in figure 6 as according to the present invention the improved front elevational schematic on geometry.If any by flat-top of precise design (mesa) and contact structures, can make that like this beeline between contact layer can keep identical on the component structure.As above-mentioned, the electric current among traditional LED can cause the electric current between contact layer (or contact mat) to be jammed, so electronics can be inclined to the path of taking a shortcut.As a result, most area can't effectively be utilized on the wafer.
In second embodiment, transparent contact layer electrode 25, p type contact structures 27 and n type contact structures 28 are on a n type GaN structure 22.Their are so arranged to make that any point to the beeline of 28 of n type contact structures is all kept identical on the p type contact structures 27.Be stressed that especially p type contact structures 27 have the shape of a circle of one or four minutes, and transparent contact layer electrode 25 is a fan shape, it has the identical center of circle with p type contact structures 27.That is to say, all identical to the radial distance of n type contact structures 28 by transparent contact layer electrode 25 from p type contact structures 27 electric current that scatters.
With reference to Fig. 7 is p type contact structures 37, n type contact structures 38 and the transparent contact layer electrode 35 of arranging another kind of shape and position on flat-top (mesa) structure 32 on the n type GaN structure 33.Be noted that especially p type contact structures 37 and n type contact structures 38 are arranged at opposing face, rather than opposite corner.That is to say that p type contact structures 37 are launched on two-dimensional directional with the shape of n type contact structures 38.Such shape and arrangement can be at p type contact structures 37 and 38 current paths of setting up equal length of n type contact structures.
Then, utilize symmetrical contact design that the dispersion of electric current and more effective utilization of light-emitting area are improved, as shown in Figure 8, epitaxial structure is identical with the foregoing description, but flat-top is different with the shape of contact structures.In this embodiment, ring-type n type contact structures 48 be positioned at element around and above n type GaN layer 42; And both all are positioned at the bottom of flat-top.The transparent contact layer electrode 45 of one p type is positioned at the top of p type GaN layer 44, and p type GaN layer 44 is positioned at the top of flat-top.For scattered current, the position of p type contact structures 47 is at the center of flat-top or near the position at center, and n type contact structures 48 have contact mat and conducting ring.Identical, the shape of two kinds of contacts (47 and 48) and position arrangement can guarantee that all current distances between contact are from being equal or being close to equal in flat-top; Thereby element can show good electric current dispersion and high area service efficiency.The shape that is noted that p type contact structures 47 especially is not limited to shown in Fig. 8; For 14*14 Mill (mil) or more for the wafer of small size, the shape of contact can be simpler, for example circle, the square finger-like design that contains or do not contain extension etc.Certainly, so design also may be used among the following embodiment.
Then be an other embodiment, Fig. 9 shows its front view, and Figure 10 is its generalized section.Because n section bar matter has preferable conductivity and good carrier drift rate, this embodiment will be applied to the electric current dispersibility of n section bar matter.One n type contact structures 58 are placed in the center or the entad of counter-rotating flat-top (or well) structure.The transparent contact layer electrode 55 of one p type covers on other surfaces of element, so can be with the maximizing efficiency of light-emitting area.Electric current disperses and can strengthen because of ring-type p type contact structures 57.In this preferred embodiment, the area of the transparent contact layer electrode of p type can provide a bigger available light-emitting area like this greater than the transparent contact layer electrode 45 of p type among Fig. 8.Be stressed that at this it is identical that embodiment of Fig. 9 and the epitaxial structure of above-mentioned other embodiment are still, those epitaxial layers comprise that n type GaN structure 52, ray structure 53 and p type GaN structure 54 are identical with material among Fig. 2; And the material of contact, for example transparent contact layer electrode 55, n type contact structures 58 and p type contact structures 57 are also identical with material among Fig. 2.According to these element design, electric current can carry out electric current with lower contact resistance to be disperseed, and then prolongs the useful life of transparent contact layer electrode.
Above-described embodiment only is preferred embodiment of the present invention, provide convenience technology of the present invention is described, be not in order to limiting scope of the present invention, all other do not break away from the equivalence change of being finished under the disclosed spirit or modify, and all should be included in the claim of the present invention.
Claims (45)
1. a luminescent diode component is characterized in that, comprises at least:
One substrate;
One first semiconductor structure is positioned on the described substrate;
One ray structure is positioned on one first part of described first semiconductor structure;
One first contact structures are positioned on one second part of described first semiconductor structure, and second of described first semiconductor structure partly partly is separated with described first, and described first contact structures have one first shape;
One second semiconductor structure is positioned on the described ray structure;
One transparent contact layer is positioned on described second semiconductor structure, and described transparent contact layer has a part of cutting off exposing second semiconductor structure of described part, and has one second shape; And
One second contact structures are positioned on the part of cut-out of described transparent contact layer, touch described second semiconductor structure, and has one the 3rd shape, the 3rd shape of described second contact structures has the transparent contact layer of second shape and a relation that described first contact structures with first shape match with described, so as to the close path of several current paths from described first contact structures to described second contact structures is provided.
2. luminescent diode component as claimed in claim 1, it is characterized in that, described transparent contact layer has several hollow pattern at least, and described hollow pattern allows light directly to penetrate from described transparent contact layer, and makes described current path have the direction of turnover.
3. luminescent diode component as claimed in claim 1 is characterized in that, described first shape comprises one first arc border at least.
4. luminescent diode component as claimed in claim 3 is characterized in that, described second shape comprises one second arc border at least, and the borderline any point of described second arc to the distance on the described first arc border equates.
5. luminescent diode component as claimed in claim 3 is characterized in that, described the 3rd shape comprises three-arc-side circle at least, and any point on described three-arc-side circle to the distance on the described first arc border equates.
6. luminescent diode component as claimed in claim 1 is characterized in that, described first shape comprises an annular shape at least, so as to making described transparent contact layer by in described first contact structures of described annular shape.
7. luminescent diode component as claimed in claim 6, it is characterized in that, described second contact structures are positioned at the center of described transparent contact layer, make that the described current path length of first contact structures from described second contact structures to described annular shape is close.
8. luminescent diode component as claimed in claim 1 is characterized in that, described the 3rd contact structures comprise an annular shape at least, and described second contact structures of described annular shape embed the inside of described transparent contact layer.
9. luminescent diode component as claimed in claim 8 is characterized in that, described first contact structures are positioned near the position under the described second contact structures center of described annular shape, make that described current path length is close.
10. luminescent diode component as claimed in claim 1 is characterized in that, described first shape comprises one first linear shape at least, and first contact structures of described first linear shape are positioned at one first long-pending side of described first surface.
11. luminescent diode component as claimed in claim 10, it is characterized in that, described second shape has one second linear shape at least, and second contact structures of described second linear shape are positioned at one second side position of described relatively first side, make that described current path length is close.
12. luminescent diode component as claimed in claim 1 is characterized in that, described first contact structures have opposite conductivity with described second contact structures.
13. luminescent diode component as claimed in claim 1 is characterized in that, described first semiconductor structure has identical conductivity with described first contact structures.
14. luminescent diode component as claimed in claim 1 is characterized in that, described second semiconductor structure has identical conductivity with described second contact structures.
15. luminescent diode component as claimed in claim 1 is characterized in that, the material of described substrate comprises an insulation sapphire at least.
16. luminescent diode component as claimed in claim 1 is characterized in that, the material of described substrate comprises an electrically conductive substrates at least, and this moment, described luminescent diode component can't conducting on the vertical direction about the normal running situation.
17. luminescent diode component as claimed in claim 1 is characterized in that, described first and second semiconductor structure comprises at least with Al
XGa
YIn
(1-X-Y)Separately the epitaxial layer of N for forming, wherein, 0≤X≤1 and 0≤Y≤1.
18. luminescent diode component as claimed in claim 1 is characterized in that, described first and second semiconductor structure is each self-contained single layer structure at least.
19. luminescent diode component as claimed in claim 1 is characterized in that, described first and second semiconductor structure is each self-contained sandwich construction at least.
20. luminescent diode component as claimed in claim 1 is characterized in that, described transparent contact layer comprises nickel monoxide/gold layer at least.
21. luminescent diode component as claimed in claim 1 is characterized in that, described first and second contact structures are each a self-contained contact layer and an electrode at least.
22. luminescent diode component as claimed in claim 1 is characterized in that, described ray structure is selected from one of homogeneous joint, two heterogeneous joint, single quantum well structures and multiple quantum trap structure.
23. luminescent diode component as claimed in claim 1 is characterized in that, comprises that also a passivation layer covers described transparent contact layer superstructure and described first contact structures, reaches on several sidewalls of described second contact structures.
24. luminescent diode component as claimed in claim 23 is characterized in that, described passivation layer is selected from aluminium oxide, silica, silicon nitride, tantalum oxide, titanium oxide, fluorite (calcium fluoride, CaF
2), hafnium oxide (hafnium oxide, HfO
2), one of zinc sulphide and zinc oxide.
25. a light-emitting diode is characterized in that, comprises at least:
One substrate;
One first semiconductor structure is positioned on the described substrate, and described first semiconductor structure has one first conductivity;
One ray structure is positioned on one first part of described first semiconductor structure;
One first contact structures are positioned on one second part of described first semiconductor structure, and second of described first semiconductor structure partly partly separates with described first, and described first contact structures have one first shape and described first conductivity;
One second semiconductor structure is positioned on the described ray structure, and described second semiconductor structure has one second conductivity opposite with described first conductivity;
One transparent contact layer is positioned on described second semiconductor structure, and described transparent contact layer has a part of cutting off exposing second semiconductor structure of described part, and has one second shape; And
One second contact structures are positioned on the part of cut-out of described transparent contact layer, touch described second semiconductor structure, and having one the 3rd shape and described second conductivity, the 3rd shape of described second contact structures has the transparent contact layer of second shape and relation that described first contact structures with first shape match so as to the close path of several current paths from described first contact structures to described second contact structures is provided with described.
26. light-emitting diode as claimed in claim 25, it is characterized in that, described transparent contact layer has several hollow pattern at least, and described hollow pattern allows light directly to penetrate from described transparent contact layer, and makes described current path have the direction of turnover.
27. light-emitting diode as claimed in claim 25 is characterized in that, described first shape comprises one first arc border at least.
28. light-emitting diode as claimed in claim 27 is characterized in that, described second shape comprises one second arc border at least, and the borderline any point of described second arc to the distance on the described first arc border equates.
29. light-emitting diode as claimed in claim 27 is characterized in that, described the 3rd shape comprises three-arc-side circle at least, and any point on described three-arc-side circle to the distance on the described first arc border equates.
30. light-emitting diode as claimed in claim 25 is characterized in that, described first shape comprises an annular shape at least, so as to making described transparent contact layer by in described first contact structures of described annular shape.
31. light-emitting diode as claimed in claim 25, it is characterized in that, described second contact structures are positioned at the center of described transparent contact layer, make that the described current path length of first contact structures from described second contact structures to described annular shape is close.
32. light-emitting diode as claimed in claim 25 is characterized in that, described the 3rd contact structures comprise an annular shape at least, and described second contact structures of described annular shape embed the inside of described transparent contact layer.
33. light-emitting diode as claimed in claim 32 is characterized in that, described first contact structures are positioned near the position under the described second contact structures center of described annular shape, make that described current path length is close.
34. light-emitting diode as claimed in claim 25 is characterized in that, described first shape comprises one first linear shape at least, and first contact structures of described first linear shape are positioned at one first long-pending side of described first surface.
35. light-emitting diode as claimed in claim 34, it is characterized in that, described second shape has one second linear shape at least, and second contact structures of described second linear shape are positioned at one second side position of described relatively first side, make that described current path length is close.
36. light-emitting diode as claimed in claim 25 is characterized in that, the material of described substrate comprises an insulation sapphire at least.
37. light-emitting diode as claimed in claim 25 is characterized in that, the material of described substrate comprises an electrically conductive substrates at least, and this moment, described light-emitting diode can't conducting on the vertical direction about the normal running situation.
38. light-emitting diode as claimed in claim 25 is characterized in that, described first and second semiconductor structure comprises at least with Al
XGa
YIn
(1-X-Y)Separately the epitaxial layer of N for forming, wherein, 0≤X≤1 and 0≤Y≤1.
39. light-emitting diode as claimed in claim 25 is characterized in that, described first and second semiconductor structure is each self-contained single layer structure at least.
40. light-emitting diode as claimed in claim 25 is characterized in that, described first and second semiconductor structure is each self-contained sandwich construction at least.
41. light-emitting diode as claimed in claim 25 is characterized in that, described transparent contact layer comprises nickel monoxide/gold layer at least.
42. light-emitting diode as claimed in claim 25 is characterized in that, described first and second contact structures are each a self-contained contact layer and an electrode at least.
43. light-emitting diode as claimed in claim 25 is characterized in that, described ray structure is selected from one of homogeneous joint, two heterogeneous joint, single quantum well structures and multiple quantum trap structure.
44. light-emitting diode as claimed in claim 25 is characterized in that, comprises that also a passivation layer covers described transparent contact layer superstructure and described first contact structures, reaches on several sidewalls of described second contact structures.
45. light-emitting diode as claimed in claim 44 is characterized in that, described passivation layer is selected from aluminium oxide, silica, silicon nitride, tantalum oxide, titanium oxide, fluorite (calcium fluoride, CaF
2), hafnium oxide (hafnium oxide, HfO
2), one of zinc sulphide and zinc oxide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB01124982XA CN1215574C (en) | 2001-08-08 | 2001-08-08 | Light emitting diode having scattered current and capable of raising light-emitting area utilization rate |
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|---|---|---|---|
| CNB01124982XA CN1215574C (en) | 2001-08-08 | 2001-08-08 | Light emitting diode having scattered current and capable of raising light-emitting area utilization rate |
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| CN1215574C CN1215574C (en) | 2005-08-17 |
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| CN100423303C (en) * | 2005-06-09 | 2008-10-01 | 璨圆光电股份有限公司 | Light emitting diode and its manufacturing method |
| US7687822B2 (en) | 2003-08-26 | 2010-03-30 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
| CN1624944B (en) * | 2003-12-03 | 2010-04-28 | 住友电气工业株式会社 | Light emitting device |
| CN101820042A (en) * | 2009-02-18 | 2010-09-01 | 日立电线株式会社 | Light emitting element |
| CN102569587A (en) * | 2007-04-09 | 2012-07-11 | 晶元光电股份有限公司 | Light emitting semiconductor device possessing laminated transparent electrode |
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| US7687822B2 (en) | 2003-08-26 | 2010-03-30 | Sumitomo Electric Industries, Ltd. | Light emitting apparatus |
| CN1624944B (en) * | 2003-12-03 | 2010-04-28 | 住友电气工业株式会社 | Light emitting device |
| CN100423303C (en) * | 2005-06-09 | 2008-10-01 | 璨圆光电股份有限公司 | Light emitting diode and its manufacturing method |
| CN102569587A (en) * | 2007-04-09 | 2012-07-11 | 晶元光电股份有限公司 | Light emitting semiconductor device possessing laminated transparent electrode |
| CN101820042A (en) * | 2009-02-18 | 2010-09-01 | 日立电线株式会社 | Light emitting element |
| CN101820042B (en) * | 2009-02-18 | 2014-04-09 | 日立电线株式会社 | Light emitting element |
| CN105655460A (en) * | 2014-12-08 | 2016-06-08 | 比亚迪股份有限公司 | LED chip and manufacturing method thereof |
| CN105655460B (en) * | 2014-12-08 | 2018-09-11 | 比亚迪股份有限公司 | Led chip and preparation method thereof |
| CN104868022A (en) * | 2015-03-30 | 2015-08-26 | 映瑞光电科技(上海)有限公司 | Manufacturing method of LED chip |
| CN105047781A (en) * | 2015-06-18 | 2015-11-11 | 合肥彩虹蓝光科技有限公司 | Low voltage LED chip and manufacture method thereof |
| CN111864027A (en) * | 2019-10-11 | 2020-10-30 | 中国科学院宁波材料技术与工程研究所 | Ultraviolet LED high-counter electrode, ultraviolet LED and preparation method thereof |
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