CN1215574C - Light emitting diode having scattered current and capable of raising light-emitting area utilization rate - Google Patents

Light emitting diode having scattered current and capable of raising light-emitting area utilization rate Download PDF

Info

Publication number
CN1215574C
CN1215574C CN 01124982 CN01124982A CN1215574C CN 1215574 C CN1215574 C CN 1215574C CN 01124982 CN01124982 CN 01124982 CN 01124982 A CN01124982 A CN 01124982A CN 1215574 C CN1215574 C CN 1215574C
Authority
CN
Grant status
Grant
Patent type
Prior art keywords
structure
contact
light emitting
semiconductor
layer
Prior art date
Application number
CN 01124982
Other languages
Chinese (zh)
Other versions
CN1400675A (en )
Inventor
郭立信
吴伯仁
易乃冠
陈建安
陈乃权
Original Assignee
洲磊科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Abstract

一种发光半导体元件至少包括:一衬底;一第一半导体结构位于衬底上;一发光结构位于第一半导体结构的一第一部份上;一第一接触结构位于第一半导体结构的一第二部份上,第一半导体结构的第二部份与第一部份相分离,第一接触结构具有一第一形状;一第二半导体结构位于发光结构上;一透明接触层位于第二半导体结构上,透明接触层具有一切断的部位以暴露出部位的第二半导体结构,并且具有一第二形状;及一第二接触结构位于透明接触层的切断的部位上,接触到第二半导体结构,并具有一第三形状,第二接触结构的第三形状与具有第二形状的透明接触层及具有第一形状的第一接触结构相配合,借以提供从第一接触结构至第二接触结构的数个电流路径相近的路径。 A light emitting semiconductor device comprising at least: a substrate; a first semiconductor structure located on the substrate; a light emitting structure located on a first portion of the first semiconductor structure; a first contact structure of a semiconductor structure at a first a second portion, the second portion of the first semiconductor structure and a first part of the phase separation, the first contact structure having a first shape; and a second semiconductor structure is disposed on the light emitting structure; a second transparent contact layer is disposed on a semiconductor structure, transparent contact layer of the second semiconductor structure having a portion to expose the cut portion and having a second shape; and a portion of the second contact structure of the transparent layer in contact with the cutting, the contact to the second semiconductor structure, and having a third shape, the third shape of the second contact structure in contact with the transparent layer and the first contact structure having a first shape having a second shape fit, so as to provide a first contact structure to the second contact from a plurality of current paths close to the path structure.

Description

具有分散电流与提高发光面积利用率的发光二极管 Light emitting diode has a light emitting area to improve the dispersion of current utilization

技术领域 FIELD

本发明有关一种发光二极管元件,特别是一种可同时分散电流及提高发光面积利用率的发光二极管。 The present invention relates to a light emitting diode element, in particular a current simultaneous dispersion and improve the area efficiency light emitting diode.

背景技术 Background technique

对于发光二极管而言,发光二极管(LED)可能是最被人所熟知的,因为它应用在各式各样的产品上,例如科学仪器、医疗仪器,最常见的是使用在消费性产品上,这些发光二极管可作为各种信号、指示器、测量仪器、量表的光源。 For light emitting diode, a light emitting diode (LED) being probably the most well-known, because it is used in a wide variety of products, such as scientific instruments, medical equipment, most commonly used in consumer products, these light emitting diodes may be used as a variety of signals, indicators, measuring instruments, scale source. 如发光二极管的半导体光源之所以如此被大量作为光源输出元件,主要是因为它们通常有很长的使用寿命、低耗能及高可信赖度。 The semiconductor light emitting diode as a light source is so large is output element, primarily because they typically have a long life, low energy consumption and high degree of trustworthiness.

自从1970年代早期开始,以氮化镓为基础的材质便因其宽广的带隙特性而引起发光器应用的高度注意。 The early 1970s began to gallium nitride-based material will be because of their wide bandgap properties attracted great attention since the light-emitting device applications. 另一方面,绝缘及晶格错置的衬底,例如蓝宝石(sapphire,三氧化二铝aluminum oxide,Al2O3),因其具有热稳定及透光度特性,且因目前仍无晶格匹配的衬底,故被广泛应用于第三族氮化物多晶的衬底。 On the other hand, the lattice mismatch counter and the insulating substrate, such as sapphire (Sapphire, aluminum oxide aluminum oxide, Al2O3), because there is still no lattice matching its liner transmittance and thermal stability characteristics, and end, it is widely applied to a substrate of polycrystalline group III nitride compound. 在美国专利4153905中已提出,在蓝宝石衬底上长出氮化镓为基础的发光二极管结构,并在其n及p型层上作相对应的欧姆接触,以完成平面式的LED结构。 It has been proposed in U.S. Patent No. 4,153,905, a GaN substrate grown on a sapphire-based LED structure, and make the corresponding ohmic contact on its n and p-type layer, to complete the planar LED structure. 然而,要形成p型高导电性的氮化镓层仍是很困难的事;因此,在p型氮化镓上的欧姆接触较不易制造,且p型层的电流也较不易散开。 However, to be formed of a highly conductive p-type gallium nitride layer is still a very difficult task; Thus, an ohmic contact on the p-type gallium nitride is less likely to manufacture, and the current p-type layer are more easy to disperse.

已经提出一种改善p型氮化镓导电性的方法。 A method has been proposed a gallium nitride p-type conductivity improvement. 然而,p型氮化镓导电性还是落于n型氮化镓之后。 However, gallium nitride or p-type conductivity after the fall in the n-type gallium nitride. 结果也许如最常见到的那样,p型氮化镓被置于以氮化镓为基础的发光二极管结构的最顶部,而p型层上的透明接触层电极(contact)便成为一较佳元件设计所不可缺少的。 Perhaps the most commonly seen as a result, the p-type gallium nitride is placed on top of the light emitting diode structure to the most GaN-based contact layer and the transparent electrode (Contact) in the p-type layer becomes a preferred element design indispensable. 对于发光体表面最大的利用效率而言,n型与p型接触结构被尽可能安排在最宽远的位置,即一元件相反的角落上。 For maximum utilization efficiency of the surface light emitter, n-type and p-type contact structure is arranged in the widest possible remote location, i.e., the opposite corner of a member.

图1中显示为一传统氮化镓为基材的发光二极管的正视图。 Figure 1 shows a front view of a conventional light-emitting diode as a gallium nitride as a base material. 一p型透明电极115中有一切断的部位117,以利于暴露出部位的p型半导体层113。 A p-type transparent electrode 115 has a cutting portion 117, in order to facilitate exposing the p-type semiconductor layer portion 113. 一连接垫(bonding pad)116透过切断的部位117紧紧粘在p型半导体层113上,并且和p型透明电极115有电性上的连接。 A connection pad (bonding pad) 116 through the cut portion 117 tightly adhered to the p-type semiconductor layer 113 and the transparent electrode 115 and p-type on the electrical connection. 此切断的部位117从连接垫116处与n型半导体层112上所提供的n型电极114被安排于最远的角落位置上。 This cut portion 117 from the connection pad 116 and the n-type electrode of the n-type semiconductor layer 112 provided in the corner 114 is arranged on the farthest position. 但是这样的接触安排会有电流在电极间拥塞(current crowding)的缺点。 However, such contact will be arranged between the electrodes a current congestion (current crowding) disadvantages. 结果导致发光表面无法有效地利用,且更有可能的是元件及透明接触层电极的寿命会因为电流拥塞而缩短。 The result can not effectively use the light emitting surface, and is more likely that the life of the contact element and the transparent electrode layer is shortened because of current crowding.

发明内容 SUMMARY

本发明的主要目的在于提供一具有分散电流与提高发光面积利用率的发光二极管。 The main object of the present invention is to provide a light emitting diode having a light emitting area to improve the dispersion of the current utilization.

本发明的另一目的在于提供一避免电流拥塞的发光二极管,利用设计接触电极的几何形状及相对位置使得接触电极间的电流路径长度相近。 Another object of the present invention is to provide a light-emitting diode current to avoid congestion, by using the design geometry and relative position of the contact electrode such that a current path length between the contact electrodes similar.

本发明的再一目的在于提供一降低表面状态及漏电流的发光二极管,利用一保护层降低表面状态的数目及降低漏电流的情形。 A further object of the present invention is to provide a case of reducing the surface state of the light emitting diode and a leakage current, a protective layer using the number of surface states to reduce leakage current and lower.

为实现上述目的,根据本发明一方面提供一种发光半导体元件,其特点是,至少包括:一衬底;一第一半导体结构位于所述衬底上;一发光结构位于所述第一半导体结构的一第一部份上;一第一接触结构位于所述第一半导体结构的一第二部份上,所述第一半导体结构的第二部份与所述第一部份相分离,所述第一接触结构具有一第一形状;一第二半导体结构位于所述发光结构上;一透明接触层位于所述第二半导体结构上,所述透明接触层具有一切断的部位以暴露出所述部位的第二半导体结构,并且具有一第二形状;及一第二接触结构位于所述透明接触层的切断的部位上,接触到所述第二半导体结构,并具有一第三形状,所述第二接触结构的第三形状与所述具有第二形状的透明接触层及所述具有第一形状的第一接触结构相配合的关系,借以提供从所述 To achieve the above object, according to an aspect of the present invention provides a light emitting semiconductor device, characterized by comprising at least: a substrate; a first semiconductor structure located on the substrate; a light emitting structure located on said first semiconductor structure on a first portion; a first contact structure is located on a second portion of said first semiconductor structure, said first portion to said second portion of the first phase-separated structure of the semiconductor, the said first contact structure having a first shape; and a second semiconductor structure is disposed on the light emitting structure; a transparent contact layer is disposed on said second semiconductor structure, the contact layer has a transparent portion to expose the cut a second portion of said semiconductor structure, and having a second shape; and a portion of the second contact structure in said transparent contact layer cut, into contact with said second semiconductor structure, and having a third shape, the said third shape of the second contact structures have a relationship with the transparent contact layer of the second shape and the first contact structure having a first mating shape, so as to provide from the 一接触结构至所述第二接触结构的数个电流路径相近的路径。 A plurality of current paths a path close to the second contact structure of the contact structure.

为实现上述目的,根据本发明另一方面提供一种发光二极管,其特征在于,至少包括:一衬底;一第一半导体结构位于衬底上;一发光结构位于第一半导体结构的一第一部份上;一第一接触结构位于第一半导体结构的一第二部份上,第一半导体结构的第二部份与第一部份相分离,第一接触结构具有一第一形状;一第二半导体结构位于发光结构上;一透明接触层位于第二半导体结构上,透明接触层具有一切断的部位以暴露出部位的第二半导体结构,并且具有一第二形状;及一第二接触结构位于透明接触层的切断的部位上,接触到第二半导体结构,并具有一第三形状,第二接触结构的第三形状与具有第二形状的透明接触层及具有第一形状的第一接触结构相配合的关系,借以提供从第一接触结构至第二接触结构的数个电流路径相近的路径。 To achieve the above object, according to another aspect of the present invention provides a light emitting diode, characterized in that, at least comprising: a substrate; a first semiconductor structure located on the substrate; a first light emitting structure in a first semiconductor structure upper portion; a second portion on a first contact structure of the first semiconductor structure, the second portion of the first semiconductor structure and a first part of the phase separation, the first contact structure having a first shape; a a second semiconductor structure is located on the light emitting structure; a second transparent contact layer on the semiconductor structure, the transparent contact layer to expose a second portion of the semiconductor structure having a cut portion, and having a second shape; and a second contact the structure of the transparent portion of the contact layer is cut, the contact to the second semiconductor structure, and having a third shape, the third shape of the second contact structure with the transparent contact layer having a second shape and having a first shape of the first contact structure cooperating relationship, thereby providing a path from a similar number of current paths to the first contact structure of the second contact structure.

采用上述方案,可利用在透明接触层结构上挖空的中空图案来阻绝电流的直线捷径路径,达到分散电流的目的,同时增加发光面积的使用率。 With the above embodiment may be utilized on the transparent layer of the contact structure to block the hollowed hollow rectilinear pattern shortcut current path, the purpose of dispersion current while increasing the utilization of light emitting area.

附图说明 BRIEF DESCRIPTION

图1为先期文献中的氮化镓发光二极管的正视示意图;图2为本发明的发光二极管的剖面示意图,包含在透明接触层电极上具有中空图案;图3至图4为本发明由AA'切开的图2的发光二极管的正视示意图,说明本发明两接触结构的几何形状及相对位置;图5为本发明的发光二极管的另一剖面示意图,说明覆盖一保护层以提升元件的可靠度;图6至图8为本发明的发光二极管的另一系列的正视示意图,说明本发明两接触结构的几何形状及相对位置;图9为本发明的发光二极管的另一系列的正视示意图,说明n型接触结构置于中间的方式;及图10为图9实施例的剖面示意图,说明n型接触结构置于中间的方式。 FIG. 1 is a front schematic view of a gallium nitride light emitting diode in the early literature; cross-sectional schematic view of a light emitting diode of the present invention in FIG. 2, a hollow pattern comprises a contact layer on the transparent electrode; Figures 3 to 4 of the present invention is defined by AA ' FIG cut the light emitting diode 2 is a front schematic view illustrating the geometry of the two contact structures of the present invention and the relative position; cross-sectional schematic view of another light emitting diode in FIG. 5 of the present invention, illustrating a protective cover layer to improve the reliability of the element ; another series of light emitting diode 6 to 8 of the present invention is a front schematic view illustrating the geometry of the two contact structures of the present invention and the relative position; elevational schematic view of a light emitting diode of another series of the present invention. FIG. 9, described the n-type contact structure placed in the middle of the embodiment; FIG. 9 and FIG. 10 is a schematic cross-sectional view of the embodiment embodiment, the n-type contact structure described manner placed in the middle.

具体实施方式 detailed description

本发明用示意图详细描述如下。 The present invention is schematically described below in detail. 需要说明的是,在详述本发明实施例时,表示半导体结构的剖面图部位不按一般比例而进行局部放大以利说明。 Incidentally, when the detailed embodiments of the invention, a sectional view showing portions of the semiconductor structure according to the general proportions not be enlarged in order to facilitate the description. 此外,在实际的制作中,应包含长度、宽度及深度的三维空间尺寸。 Further, in the actual production, it should be included three spatial dimensions of length, width and depth.

在本较佳实施例中,以GaN为基础的元件来证明;无论如何,本发明不应被局限于这些材质中。 In the present preferred embodiment, the GaN-based element to prove; however, the present invention should not be limited to these materials are. 所谓的以GaN为基础的材质意指由AlXGaYIn1-X-YN材质制作的,其中X与Y介于0与1之间。 A so-called GaN-based material produced by means AlXGaYIn1-X-YN material, wherein X and Y is between 0 and 1. 而所谓以GaN为基础的发光二极管(LED)指的是一具有较窄能隙的GaN为基础的发光结构介于具有较宽能隙的GaN为基础结构的单层或多层之间,在发光结构的不同侧具有不同的导电型态。 The so-called light emitting diode (LED) of GaN-based means having a narrower energy gap of GaN-based light emitting structure having a wide energy gap between a GaN single or multiple layers between infrastructure, in different sides of the light emitting structure having a different conductivity type. 此外,本发明除可用于发光二极管长在一绝缘衬底上外,也可以应用在发光二极管长在其他衬底,但垂直方向上无法导通的结构,例如GaAs、GaP、Si及SiC。 Further, the present invention may be used in addition to a light emitting diode on a long outer insulating substrate, a light emitting diode may be used in other substrate long, but can not be turned in the vertical direction of the structure, e.g. GaAs, GaP, Si, and SiC.

本发明采用元件的几何形状及接触形式的改进来改善电流分散的方法。 The present invention utilizes the geometry and the contact element in the form of an improved method to improve the current spreading. 在这些实施例中,一透光且导电的欧姆接触层置于元件导电性较小一侧的顶部;所有的接触层都被精心设计用以减少电流拥塞、加大发光面积及进而增加LED的效率及使用寿命。 In these embodiments, a transparent and electrically conductive layer is placed on top of the ohmic contact a conductive element on one side of the smaller; all contact layers are designed to reduce current crowding, and further increased to increase the light emitting area of ​​the LED efficiency and service life. 本发明的详细说明如下;无论如何,本发明不应被局限于如下的如图2及图3所示分别为本发明的剖面及正视示意图。 Detailed description of the invention below; however, the present invention should not be limited to the following cross-sectional view of FIG. 2 and 3, respectively, and a front view of the present invention. 一n型氮化镓结构12形成于一绝缘衬底11,例如蓝宝石衬底上。 An n-type GaN structure 12 is formed on an insulating substrate 11, for example, on a sapphire substrate. 在n型氮化镓结构12上为一发光结构13,接着形成一p型氮化镓结构14。 On the n-type GaN light emitting structure 12 is a structure 13, 14 is then formed a p-type GaN structures. n型及p型氮化镓皆可以为氮化镓单层、氮化镓与氮化铝多层结构,或结合其他组合的多层结构。 n-type and p-type gallium nitride single Jieke that gallium, gallium aluminum nitride multilayer structure, a multilayer structure or in combination with other combinations. 发光结构可以为均质(homogenous)pn接合、异质接合(hetero-junction)、单一阱结构、或多重阱结构。 A pn junction light emitting structure may be homogeneous (homogenous), heterojunction (hetero-junction), a single well structure or a multiple well structure. 一较佳元件结构包括在蓝宝石衬底11上的单层n型氮化镓、一InGaN/GaN多重阱发光层,及AlGaN/GaN p型层;这样的半导体发光二极管是依如此的安排多晶形成的。 A preferred structure element comprises a single layer on a sapphire substrate 11 of n-type GaN, an InGaN / GaN multi-well light-emitting layer, and the AlGaN / GaN p-type layer; such semiconductor light-emitting diode is arranged so by polycrystalline Forming.

接着,此多晶晶片要进行元件制程,其包括以平顶蚀刻(mesa etching)、金属化及热处理制程形成晶粒。 Subsequently, this element to be polycrystalline wafer process which comprises etching plateau (mesa etching), metallization and heat treatment process to form grains. 金属化完成一透明接触层电极15、许多的中空图案16、p型接触结构(包括导电电极与接触层)17,及n型欧姆接触结构18。 Completion of a transparent metal contact layer electrode 15, 16, p-type contact structure of many hollow pattern (including a conductive electrode contact layer) 17, and an n-type ohmic contact structure 18. 另外,热处理制程则是完成透明接触层电极15的氧化,及p型接触结构17与n型欧姆接触结构18的回火。 The heat treatment process is completed the transparent oxide electrode contact layer 15, the p-type contact structure 17 and the contact structure 18 and the tempering n-type ohmic. 就正视图来看,p型接触结构17与n型欧姆接触结构18是分离的,也就是在垂直方向上没有上下重叠的部位。 Jiuzheng perspective view, P-type contact structure 17 ohmic contact with the n-type structure 18 is isolated, i.e. there is no vertical overlap portions in the vertical direction. 特别要强调的是,透明接触层电极15的材质是氧化镍及金层、氧化镁、氧化锌或是五氧化二钒,在较佳实施例中,透明电极材料为氧化镍及金层。 Particular emphasis is, the transparent electrode material of the contact layer 15 is a gold layer and nickel oxide, magnesium oxide, zinc oxide or vanadium pentoxide, in the preferred embodiment, the transparent electrode material is a nickel oxide and a gold layer.

上述的中空图案16(窗口)是本发明的关键,它们可以具有多折路径的功能。 The above-described hollow pattern 16 (window) is critical to the invention, they may have a multi-function folding path. 第一,中空图案16可以阻断电流以捷径通过;第二,假如它们被准确地设计时,在最长与最短的电流路径之间,它们扮演平衡差异的功能。 First, the hollow pattern 16 can be blocked by a shortcut current; second, if they are accurately designed, the current path between the shortest and the longest, they play the function of the balance difference. 事实上,透明接触层电极15不是百分之百透光,因此设计中空图案16来提供光线从元件的耦合处直接射出,而没有透明接触层电极阻挡的路径,这样,元件的发光效率可借助中空图案16来提升,同时具有良好的电流分散性。 In fact, in contact with the transparent electrode layer 15 is not one hundred percent transmissive, so the design of the hollow pattern 16 to provide light emitted directly from the coupling element, the contact layer and the transparent electrode without blocking the path, so that light emission efficiency may be by means of a hollow element pattern 16 to improve, while having good dispersibility current.

另外,中空图案16的形状、数目及位置并不局限于实施例中所提到的。 Further, the shape, number and position of the hollow pattern 16 is not limited to the embodiment mentioned embodiment. 它可以,也应为各种元件及电流等级作最佳化的设计。 It can also be designed to make the best of the various elements and the current level. 特别是当p及n型接触结构被安排在相反一侧时,本发明能发挥最大的效率。 Especially when p and n-type contact structure is arranged at the opposite side, the present invention can maximize efficiency. 参照图4,也是一个正视图,为本发明的另一实施例,应用到方形形状的LED晶片,其中p型接触结构17,及n型欧姆接触结构18被安排在方形相反的一侧。 Referring to Figure 4, is a front view of another embodiment of the present invention is applied to the square-shaped LED wafer, wherein the p-type contact structure 17, and the n-type ohmic contact structure 18 is arranged on the opposite side of the square.

另一方面,通过减少表面状态可进一步改进元件的表现。 On the other hand, the performance can be further improved by reducing the surface state of the element. 表面状态可利用一保护层19覆盖在元件上以降低漏电流,如图5所示。 Using a state of the surface protective layer 19 may be overlaid on the element to reduce leakage current, as shown in FIG. 有许多的材质都可达到表面保护的目的。 There are many materials can achieve the purpose of surface protection. 无论如何,对发光体而言,表层应使得发射光在发射波长范围有高度的光学传送(optical transmission),并且,此保护层的性质是绝缘的或是高阻抗的。 In any case, the light-emitting material, the light emitting surface such that the emission wavelength range of a high degree of optical transmission (optical transmission), and the nature of this protective layer is insulative or high impedance. 这些材质,例如氧化铝、氧化硅、氮化硅、氧化钽、氧化钛、硫化锌、氟石(calcium fluoride,CaF2)、氧化铪(hafnium oxide,HfO2)及氧化锌等可以符合要求。 These materials, such as alumina, silicon oxide, silicon nitride, tantalum oxide, titanium oxide, zinc sulfide, fluorspar (calcium fluoride, CaF2), hafnia (hafnium oxide, HfO2), and zinc oxide can meet requirements. 此保护层是可以应用到本发明任一实施例中,后续不再重复强调及提及。 This protective layer may be applied to any embodiment of the present invention, an embodiment, not repeated emphasis and subsequent reference.

从图2至4的实施例着重于可阻绝电流的中空图案,其中空图案迫使电流更均匀地散开。 Mainly from the embodiment in FIGS. 2-4 may be a hollow block the current pattern, wherein the pattern air current is forced to spread out more evenly. 接着,将介绍另一利用几何形状来达到分散电流的目的。 Next, we will be described using another geometry to achieve the purpose of the current dispersion. 如图6所示为根据本发明在几何形状上的改进的正视示意图。 6 shows the improved geometry in accordance with the present invention elevational schematic view. 元件结构上如有被精确设计的平顶(mesa)及接触结构,这样可使得接触层间的最短距离可保持相同。 If the element structure plateau (Mesa) are precisely designed and contact structure, so that may be the shortest distance between the contact layer may remain the same. 如上述,传统LED中的电流会造成接触层(或接触垫)间的电流拥塞,所以电子会倾向走捷径路径。 As described above, in the conventional LED current will cause current crowding between the contact layer (or contact pads), so that electrons would tend to take a shortcut path. 结果,晶片上大部位的面积无法有效被利用。 As a result, a large portion of the wafer area can not be effectively utilized.

在第二个实施例中,透明接触层电极25、p型接触结构27及n型接触结构28在一n型GaN结构22之上。 In a second embodiment, the transparent electrode contact layer 25, p-type and n-type contact structure 27 in contact structure on an n-type GaN structure 2228. 它们被如此安排使得p型接触结构27上任一点至n型接触结构28间的最短距离均维持相同。 They are arranged such that the p-type contact structure 27 to any point on the n-type contact structure is the shortest distance 28 remained the same. 特别要强调的是,p型接触结构27有一四分的一圆的形状,而透明接触层电极25为一扇形形状,其与p型接触结构27具有相同的圆心。 Particular emphasis is, the p-type contact structure 27 has the shape of a quarter of a circle, and the transparent electrode layer 25 is in contact with a fan shape, with the p-type contact structure 27 has the same center. 也就是说,通过透明接触层电极25从p型接触结构27散开电流至n型接触结构28的放射状距离皆相同。 That is, 25 are the same as the current from 27 to spread the n-type contact structure p-type contact structure radial distance of the contact layer 28 through the transparent electrode.

参照图7为在一n型GaN结构33上的平顶(mesa)结构32上安排另一种形状与位置的p型接触结构37、n型接触结构38及透明接触层电极35。 Another arrangement p-contact position with the structural shape 37, n-type contact structure 38 and the transparent electrode 35 on the contact layer 32 with reference to FIG. 7 in a flat-top structure 33 of n-type GaN (Mesa) structure. 特别要说明的是,p型接触结构37与n型接触结构38被安排在相反的侧面,而不是相反的角落。 Particularly noted that, P-type contact structure 37 with the n-type contact structure 38 is arranged on the opposite side, rather than the opposite corner. 也就是说,p型接触结构37与n型接触结构38的形状在二维方向上展开。 That is, p-type contact structure 37 with the n-type contact structure 38 shapes deployed in two dimensions. 这样的形状与安排可以在p型接触结构37与n型接触结构38间建立相同长度的电流路径。 Such a shape and arrangement can be established between the contacts 37 and 38 n-type contact structure is the same as the length of the current path of the p-type configuration.

接着,利用较对称的接触设计对电流的分散及发光面积的更有效利用进行改进,如图8所示,多晶结构与上述实施例是相同的,但平顶与接触结构的形状是不同的。 Next, a more symmetric contact design of more efficient use of the dispersion and the light emitting area to improve the current, as shown, the polycrystalline structure of the above-described embodiment of Example 8 is the same, but the shape of the flat top of the contact structures are different . 在此实施例中,环状n型接触结构48位于元件的周围且在n型GaN层42的上方;而两者皆位于平顶的底部。 Embodiment, the upper annular element 48 is located around the n-type contact structure and the n-type GaN layer 42 in this embodiment; both of which are located at the bottom and a flat top. 一p型透明接触层电极45位于p型GaN层44的上方,且p型GaN层44位于平顶的顶部。 A transparent p-type electrode contact layer 45 located above the p-type GaN layer 44 and p-type GaN layer 44 at the top of the plateau. 为了分散电流,p型接触结构47的位置在平顶的中心或接近中心的位置,且n型接触结构48具有接触垫及导电环。 In order to disperse the current, the position of the p-type contact structure 47 in the flat top of the center or near the center position, and the n-type contact having a contact pad structure 48 and the conductive ring. 相同的,两种接触(47 and 48)的形状及位置安排可以确保所有在接触间的电流距离在平顶中是相等或近乎相等的;因而元件可以表现出良好的电流分散及高面积使用效率。 The same two contacts (47 and 48) of the shape and position of arrangement ensures that all currents in the distance between the flat top of the contact is equal or nearly equal; element can thus exhibit good dispersion and high current efficiency area . 特别要说明的是,p型接触结构47的形状并不局限于图8中所示;对于14*14密尔(mil)或是更小面积的晶片而言,接触的形状可以简单些,例如圆形、方形含或不含延伸的指状设计等。 Particularly noted that the shape of the p-type contact 47 is not limited to the structure shown in FIG. 8; 14 * to 14 mil (mil) or smaller area of ​​the wafer, the shape of the contact may be simpler, e.g. circular, square, with or without extending finger design. 当然,如此的设计也可应用到以下的实施例中。 Of course, such a design may also be applied to the following embodiments.

接着为另外一实施例,图9显示其正视图,图10为其剖面示意图。 Followed by a further embodiment, FIG. 9 shows, in FIG. 10 for a schematic cross-sectional front view thereof. 因为n型材质具有较佳的导电性及良好的载子漂移率,所以此实施例将应用到n型材质的电流分散能力。 Since the n-type material having a better electrical conductivity and good carrier drift rate, so this embodiment will be applied to the n-type current spreading ability of the material. 一n型接触结构58被安放在反转平顶(或井)结构的中心或近中心位置。 An n-type contact structure 58 is placed in the inverted flat top (or wells) center or near the center position of the structure. 一p型透明接触层电极55覆盖在元件的其他表面上,如此可将发光面积的效率最大化。 A transparent p-type contact layer 55 covering the electrode elements on another surface, and so can maximize efficiency of the light emitting area. 电流分散可因环状p型接触结构57增强。 Current may be dispersed by the annular p-contact 57 structure reinforcement. 在本较佳实施例中,p型透明接触层电极的面积大于图8中p型透明接触层电极45,这样可提供一更大的可利用的发光面积。 In the area of ​​this preferred embodiment, the transparent p-type contact layer p-type transparent electrode is larger than the electrode contact layer 8 in FIG. 45, which can provide a larger emitting area can be utilized. 在此要强调的是,图9的实施例与上述其他实施例的多晶结构仍是相同的,那些多晶结构层,包括n型GaN结构52、发光结构53及p型GaN结构54和图2中的材质相同;而接触的材质,例如透明接触层电极55、n型接触结构58与p型接触结构57,也和图2中的材质相同。 Here it is emphasized that the embodiment of Figure 9 with the another polycrystalline structure of this embodiment remains the same, those of the polycrystalline structure layer comprising n-type GaN structure 52, the light emitting structure 53 and the p-type GaN structure 54 and FIG. 2 in the same material; the material in contact, such as contact with the transparent electrode layer 55, n-type contact structure 58 and the p-type contact structure 57, also in FIG. 2 and the same material. 根据这些元件设计,电流可以以较低的接触电阻进行电流分散,进而延长透明接触层电极的使用寿命。 Current may be dispersed in low contact resistance according to the design of these elements, the current, thereby extending the life of the contact layer of the transparent electrode.

以上所述的实施例仅为本发明的较佳实施例,提供方便说明本发明的技术,并非用以限定本发明的范围,凡其他未脱离本发明所揭示的精神下所完成的等效变更或修饰,均应包含在本发明的专利范围内。 The above-described embodiments are merely preferred embodiments of the present invention, there is provided the convenience of explanation of the techniques of this disclosure, it is not intended to limit the scope of the present invention, all other equivalent changes without departing from the spirit of the invention disclosed in the finished or modifications be included within the scope of the present invention.

Claims (38)

  1. 1.一种发光半导体元件,其特征在于,至少包括:一衬底;一第一半导体结构位于所述衬底上;一发光结构位于所述第一半导体结构的一第一部份上;一第一接触结构位于所述第一半导体结构的一第二部份上,所述第一半导体结构的第二部份与所述第一部份相分离,所述第一接触结构具有一第一形状;一第二半导体结构位于所述发光结构上;一透明接触层电极位于所述第二半导体结构上,所述透明接触层电极具有一切断的部位以暴露出所述部位的第二半导体结构,并且具有一第二形状;及一第二接触结构位于所述透明接触层电极的切断的部位上,接触到所述第二半导体结构,并具有一第三形状,所述第二接触结构的第三形状与所述具有第二形状的透明接触层电极及所述具有第一形状的第一接触结构相配合的关系,借以提供数个从所述第一接触结构 A light emitting semiconductor device, characterized in that, at least comprising: a substrate; a first semiconductor structure located on the substrate; a light emitting structure located on a first portion of said first semiconductor structure; a first contact structure located on a second portion of said first semiconductor structure, said first semiconductor structure and second portion of the separated first portion, the first contact structure having a first a second semiconductor layer in contact with a transparent electrode structure positioned on said second semiconductor structure, the transparent electrode has a contact layer to expose a portion of the cutting part; form; a second semiconductor structure is disposed on the light emitting structure and having a second shape; and a second contact structure on the transparent contact layer of the electrode positioned in the cut portion, contacts the second semiconductor structure, and having a third shape, the second contact structure the third shape of the transparent electrode and the contact layer having a first contact structure of said first shape, said shape having a second mating relationship, thereby providing a plurality of the first contact structure from 所述第二接触结构的路径,这些路径具有相近长度的电流路径。 The second contact structure of the path, these paths having similar current path length.
  2. 2.如权利要求1所述的发光半导体元件,其特征在于,所述的透明接触层电极至少具有数个中空图案,所述中空图案允许光线从所述透明接触层电极直接射出,并且使所述电流路径具有转折的方向。 The light emitting semiconductor device according to claim 1, wherein said transparent contact layer having at least a plurality of hollow electrode pattern, said hollow pattern allows light emitted from the direct contact with the transparent electrode layer and such that said current path having the direction of turning.
  3. 3.如权利要求1所述的发光半导体元件,其特征在于,所述的第一形状至少包含一第一弧形边界。 The semiconductor light emitting element according to claim 1, wherein the first shape comprises at least a first arcuate boundary.
  4. 4.如权利要求3所述的发光半导体元件,其特征在于,所述的第二形状至少包含一第二弧形边界,所述第二弧形边界上的任一点至所述第一弧形边界的距离相等。 The light emitting semiconductor device according to claim 3, wherein said second shape comprises at least one second arcuate boundary, any point on the second boundary point to the first arcuate arcuate equal to the distance from the boundary.
  5. 5.如权利要求3所述的发光半导体元件,其特征在于,所述的第三形状至少包含一第三弧形边界,所述第三弧形边界上的任一点至所述第一弧形边界的距离相等。 The light emitting semiconductor device according to claim 3, characterized in that said third arcuate shape comprises at least a third border, on any of the third to the first curved arcuate boundary point equal to the distance from the boundary.
  6. 6.如权利要求1所述的发光半导体元件,其特征在于,所述的第一形状至少包含一环形形状,借以使所述透明接触层电极被围绕于所述环形形状的所述第一接触结构内。 6. The light emitting semiconductor device according to claim 1, wherein the first shape comprises at least one annular shape, whereby said transparent electrode layer is in contact with the annular shape to surround the first contact within the structure.
  7. 7.如权利要求6所述的发光半导体元件,其特征在于,所述的第二接触结构位于所述透明接触层电极的中心,使得从所述第二接触结构至所述环形形状的第一接触结构的所述电流路径长度相近。 7. The first light emitting semiconductor device according to claim 6, characterized in that said second contact structure in the center of the transparent electrode layer is in contact, such that the annular shape from said second contact structure to which the current path length of the contact structure similar.
  8. 8.如权利要求1所述的发光半导体元件,其特征在于,所述的第一接触结构位于环形形状的所述第二接触结构中心正下方的位置,使得所述电流路径长度相近。 The light-emitting semiconductor device according to claim 1, characterized in that said first contact structure located at the position of the annular shape of the second contact structures directly below the center, so that the current path of similar length.
  9. 9.如权利要求1所述的发光半导体元件,其特征在于,所述的第一接触结构与所述第二接触结构具有相反的导电性。 The semiconductor light emitting element according to according to claim 1, wherein said first contact structure and said second contact structure having opposite conductivity.
  10. 10.如权利要求1所述的发光半导体元件,其特征在于,所述的第一半导体结构与所述第一接触结构具有相同的导电性。 The light emitting semiconductor device according to claim 1, wherein said first semiconductor structure and said first contact structure having the same conductivity.
  11. 11.如权利要求1所述的发光半导体元件,其特征在于,所述的第二半导体结构与所述第二接触结构具有相同的导电性。 11. The light emitting semiconductor device according to claim 1, characterized in that said second semiconductor structure and the second contact structure having the same conductivity.
  12. 12.如权利要求1所述的发光半导体元件,其特征在于,所述的衬底的材质至少包括一绝缘蓝宝石。 The light emitting semiconductor device according to claim 1, wherein said substrate material comprises at least one insulating sapphire.
  13. 13.如权利要求1所述的发光半导体元件,其特征在于,所述的衬底的材质至少包括一导电底材,此时所述发光半导体元件在正常操作状况上下垂直方向上无法导通。 The light emitting semiconductor device according to claim 1, wherein said substrate material comprises at least one electrically conductive substrate, when the light emitting semiconductor element can not be turned on in normal operating conditions the vertical in the vertical direction.
  14. 14.如权利要求1所述的发光半导体元件,其特征在于,所述的第一及第二半导体结构至少包含以AlXGaYIn(1-XY)N为组成的各自的多晶结构层,其中,0≤X≤1及0≤Y≤1。 14. The light emitting semiconductor device according to claim 1, wherein said first and second semiconductor structures each including at least polycrystalline structure layer AlXGaYIn (1-XY) N is composed of, wherein 0 ≤X≤1 and 0≤Y≤1.
  15. 15.如权利要求1所述的发光半导体元件,其特征在于,所述的第一及第二半导体结构至少各自包含一单层结构。 15. The light emitting semiconductor device according to claim 1, wherein said first and second semiconductor structures each comprise at least a single layer structure.
  16. 16.如权利要求1所述的发光半导体元件,其特征在于,所述的第一及第二半导体结构至少各自包含一多层结构。 16. The light emitting semiconductor device according to claim 1, characterized in that said at least first and second structures each comprises a semiconductor multilayer structure.
  17. 17.如权利要求1所述的发光半导体元件,其特征在于,所述的透明接触层电极至少包括一氧化镍及金层。 17. The semiconductor light emitting device according to claim 1, wherein said transparent electrode comprises at least a contact layer and a gold layer of nickel oxide.
  18. 18.如权利要求1所述的发光半导体元件,其特征在于,所述的第一及第二接触结构至少各自包含一接触层与一电极。 18. The light emitting semiconductor device according to claim 1, wherein said first and second contact structures each comprise at least a contact layer and an electrode.
  19. 19.如权利要求1所述的发光半导体元件,其特征在于,所述的发光结构选自同质接合、异质接合、单一阱结构及多重阱结构之一。 19. The light emitting semiconductor device according to claim 1, wherein said light emitting structure selected homojunction, heterojunction, one of the single-well structure and multi-well structure.
  20. 20.如权利要求1所述的发光半导体元件,其特征在于,还包括一钝化层覆盖在所述透明接触层电极上方及所述第一接触结构、及所述第二接触结构的数个侧壁上。 20. The light emitting semiconductor device according to claim 1, characterized in that, further comprising a passivation layer covering the contact layer over the transparent electrode and the first contact structure, and a plurality of the second contact structure on the side wall.
  21. 21.如权利要求20所述的发光半导体元件,其特征在于,所述的钝化层选自于氧化铝、氧化硅、氮化硅、氧化钽、氧化钛、氟石、氧化铪、硫化锌及氧化锌之一。 21. The light emitting semiconductor device according to claim 20, wherein the passivation layer is selected from aluminum oxide, silicon oxide, silicon nitride, tantalum oxide, titanium oxide, zeolite, hafnium oxide, zinc sulfide and one of zinc oxide.
  22. 22.一种发光二极管元件,其特征在于,至少包括:一衬底;一第一半导体结构位于所述衬底上,所述第一半导体结构具有一第一导电性;一发光结构位于所述第一半导体结构的一第一部份上;一第一接触结构位于所述第一半导体结构的一第二部份上,所述第一半导体结构的第二部份与所述第一部份是分离的,所述第一接触结构具有一第一形状及所述第一导电性;一第二半导体结构位于所述发光结构上,所述第二半导体结构具有一与所述第一导电性相反的一第二导电性;一透明接触层电极位于所述第二半导体结构上,所述透明接触层电极具有一切断的部位以暴露出所述部位的第二半导体结构,并且具有一第二形状;及一第二接触结构位于所述透明接触层电极的切断的部位上,接触到所述第二半导体结构,并具有一第三形状及所述第二导电性,所述第 22. A light emitting diode element, characterized in that, at least comprising: a substrate; a first semiconductor structure positioned on the substrate, said first semiconductor structure having a first conductivity; a light emitting structure is located on a first portion of the first semiconductor structure; a first contact structure is located on a second portion of said first semiconductor structure, said first semiconductor structure and second portion of said first portion is isolated, the first contact structure having a first shape and the first conductive; a second semiconductor structure is disposed on the light emitting structure, said second semiconductor structure having a first conductive the a second opposite conductivity; a transparent contact layer of the electrode positioned on the second semiconductor structure, the transparent electrode has a contact layer to expose a portion of the cutting portion of a second semiconductor structure, and having a second shape; and a second upper contact structure positioned off the transparent electrode layer is in contact with a portion exposed to said second semiconductor structure, and having a third shape and the second electrically conductive, said first 接触结构的第三形状与所述具有第二形状的透明接触层电极及所述具有第一形状的第一接触结构相配合的关系借以提供数个从所述第一接触结构至所述第二接触结构的路径,这些路径具有长度相近的电流路径。 The third shape of the contact structure and the relationship between the transparent electrode layer in contact with said first contact structure having a first shape, the second shape having a cooperating so as to provide a plurality of the first contact from the second structure to the path of the contact structure, which has a current path similar to path length.
  23. 23.如权利要求22所述的发光二极管元件,其特征在于,所述的透明接触层电极至少具有数个中空图案,所述中空图案允许光线从所述透明接触层电极直接射出,并且使所述电流路径具有转折的方向。 23. The light emitting diode device according to claim 22, wherein said contact layer is a transparent electrode pattern having at least a plurality of hollow, said hollow pattern allows the light emitted from the direct contact with the transparent electrode layer and such that said current path having the direction of turning.
  24. 24.如权利要求22所述的发光二极管元件,其特征在于,所述的第一形状至少包含一第一弧形边界。 22 light emitting diode element according to claim 24., characterized in that the first shape comprises at least a first arcuate boundary.
  25. 25.如权利要求24所述的发光二极管元件,其特征在于,所述的第二形状至少包含一第二弧形边界,所述第二弧形边界上的任一点至所述第一弧形边界的距离相等。 25. The light emitting diode element according to claim 24, wherein said second shape comprises at least one second arcuate boundary, any point on the second boundary point to the first arcuate arcuate equal to the distance from the boundary.
  26. 26.如权利要求24所述的发光二极管元件,其特征在于,所述的第三形状至少包含一第三弧形边界,所述第三弧形边界上的任一点至所述第一弧形边界的距离相等。 26. The light emitting diode element according to claim 24, wherein said third shape comprising at least one third arc border, on any of the third to the first curved arcuate boundary point equal to the distance from the boundary.
  27. 27.如权利要求22所述的发光二极管元件,其特征在于,所述的第一形状至少包含一环形形状,借以使所述透明接触层电极被围绕于所述环形形状的所述第一接触结构内。 27. The light emitting diode device according to claim 22, wherein the first shape comprises at least one annular shape, whereby said transparent electrode layer is in contact with the annular shape to surround the first contact within the structure.
  28. 28.如权利要求27所述的发光二极管元件,其特征在于,所述的第二接触结构位于所述透明接触层电极的中心,使得从所述第二接触结构至所述环形形状的第一接触结构的所述电流路径长度相近。 28. The first light emitting diode element according to claim 27, characterized in that said second contact structure in the center of the transparent electrode layer is in contact, such that the annular shape from said second contact structure to which the current path length of the contact structure similar.
  29. 29.如权利要求22所述的发光二极管元件,其特征在于,所述的第一接触结构位于环形形状的所述第二接触结构中心正下方的位置,使得所述电流路径长度相近。 29. The light emitting diode device according to claim 22, wherein the position of said first annular-shaped contact structure of the second contact structure directly below the center, so that the current path of similar length.
  30. 30.如权利要求22所述的发光二极管元件,其特征在于,所述的衬底的材质至少包括一绝缘蓝宝石。 It said light emitting diode element as claimed in claim 30. 22, wherein said substrate material comprises at least one insulating sapphire.
  31. 31.如权利要求22所述的发光二极管元件,其特征在于,所述的第一及第二半导体结构至少包含以AlXGaYIn(1-XY)N为组成的各自的多晶结构层,其中,0≤X≤1及0≤Y≤1。 31. The light emitting diode device according to claim 22, wherein said first and second semiconductor structures each including at least polycrystalline structure layer AlXGaYIn (1-XY) N is composed of, wherein 0 ≤X≤1 and 0≤Y≤1.
  32. 32.如权利要求22所述的发光二极管元件,其特征在于,所述的第一及第二半导体结构至少各自包含一单层结构。 22 light emitting diode element according to claim 32., characterized in that said first and second semiconductor structures each comprise at least a single layer structure.
  33. 33.如权利要求22所述的发光二极管元件,其特征在于,所述的第一及第二半导体结构至少各自包含一多层结构。 22 light emitting diode element according to claim 33., characterized in that said at least first and second structures each comprising a semiconductor multilayer structure.
  34. 34.如权利要求22所述的发光二极管元件,其特征在于,所述的透明接触层电极至少包括一氧化镍及金层。 22 light emitting diode element according to claim 34., characterized in that said transparent electrode comprises at least a contact layer and a gold layer of nickel oxide.
  35. 35.如权利要求22所述的发光二极管元件,其特征在于,所述的第一及第二接触结构至少各自包含一接触层与一电极。 22 light emitting diode element according to claim 35., characterized in that said first and second contact structures each comprise at least a contact layer and an electrode.
  36. 36.如权利要求22所述的发光二极管元件,其特征在于,所述的发光结构选自同质接合、异质接合、单一阱结构及多重阱结构之一。 36. The light emitting diode device according to claim 22, wherein said light emitting structure selected homojunction, heterojunction, one of the single-well structure and multi-well structure.
  37. 37.如权利要求22所述的发光二极管元件,其特征在于,还包括一钝化层覆盖在所述透明接触层电极上方及所述第一接触结构、及所述第二接触结构的数个侧壁上。 37. The light emitting diode device according to claim 22, characterized in that, further comprising a passivation layer covering the contact layer over the transparent electrode and the first contact structure, and a plurality of the second contact structure on the side wall.
  38. 38.如权利要求37所述的发光二极管元件,其特征在于,所述的钝化层选自氧化铝、氧化硅、氮化硅、氧化钽、氧化钛、氟石、氧化铪、硫化锌及氧化锌之一。 38. The light emitting diode device according to claim 37, wherein said passivation layer is selected from aluminum oxide, silicon oxide, silicon nitride, tantalum oxide, titanium oxide, zeolite, hafnium oxide, zinc sulfide, and one of zinc oxide.
CN 01124982 2001-08-08 2001-08-08 Light emitting diode having scattered current and capable of raising light-emitting area utilization rate CN1215574C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 01124982 CN1215574C (en) 2001-08-08 2001-08-08 Light emitting diode having scattered current and capable of raising light-emitting area utilization rate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 01124982 CN1215574C (en) 2001-08-08 2001-08-08 Light emitting diode having scattered current and capable of raising light-emitting area utilization rate

Publications (2)

Publication Number Publication Date
CN1400675A true CN1400675A (en) 2003-03-05
CN1215574C true CN1215574C (en) 2005-08-17

Family

ID=4665833

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 01124982 CN1215574C (en) 2001-08-08 2001-08-08 Light emitting diode having scattered current and capable of raising light-emitting area utilization rate

Country Status (1)

Country Link
CN (1) CN1215574C (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3841092B2 (en) 2003-08-26 2006-11-01 住友電気工業株式会社 The light-emitting device
JP2005191530A (en) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd Light emitting device
CN100423303C (en) 2005-06-09 2008-10-01 璨圆光电股份有限公司 Light emitting diode and its manufacturing method
CN101286541B (en) * 2007-04-09 2012-04-11 晶元光电股份有限公司 Semi-conductor illuminating device having fold transparent electrode
US8237180B2 (en) * 2009-02-18 2012-08-07 Hitachi Cable, Ltd. Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode
CN105655460B (en) * 2014-12-08 2018-09-11 比亚迪股份有限公司 Led chip and preparation method
CN104868022A (en) * 2015-03-30 2015-08-26 映瑞光电科技(上海)有限公司 Manufacturing method of LED chip
CN105047781A (en) * 2015-06-18 2015-11-11 合肥彩虹蓝光科技有限公司 Low voltage LED chip and manufacture method thereof

Also Published As

Publication number Publication date Type
CN1400675A (en) 2003-03-05 application

Similar Documents

Publication Publication Date Title
US6380564B1 (en) Semiconductor light emitting device
US7259402B2 (en) High efficiency group III nitride-silicon carbide light emitting diode
US20100072487A1 (en) Light emitting diode, package structure and manufacturing method thereof
US20070018183A1 (en) Roughened high refractive index layer/LED for high light extraction
US20130234192A1 (en) Light emitting diode chip having electrode pad
US20080230793A1 (en) Patterned Substrate For Light Emitting Diode and Light Emitting Diode Employing the Same
US20070200122A1 (en) Light emitting device and method of manufacturing the same
US20080230792A1 (en) Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface
US20110163346A1 (en) Light emitting diode having electrode pads
US20110156070A1 (en) Light emitting diode
US20110140160A1 (en) Light emitting diode having electrode pads
CN101933166A (en) Wire bond free wafer level led
JPH0997922A (en) Light-emitting element
CN1433578A (en) Scalable LED with improved current spreading structures
US6445007B1 (en) Light emitting diodes with spreading and improving light emitting area
WO2007036164A1 (en) Semiconductor light-emitting device and method for making same
JP2003017757A (en) Flip-chip semiconductor light emitting element
US20040217361A1 (en) Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same
CN1601774A (en) Structure of LED and its mfg method
CN101072464A (en) Ac-dc light-emitting diode having integrated protection function
US20110156086A1 (en) Light emitting diode having electrode extensions
JP2011061077A (en) Semiconductor light emitting element
US20110227114A1 (en) High efficiency light emitting diode
CN101764187A (en) Electrode structure for a semiconductor light emitting diode
CN103022334A (en) High-voltage inverted LED chip and manufacturing method thereof

Legal Events

Date Code Title Description
C10 Entry into substantive examination
C06 Publication
C10 Entry into substantive examination
C14 Grant of patent or utility model
CF01