CN1398146A - Electroluminescent organic device - Google Patents
Electroluminescent organic device Download PDFInfo
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- CN1398146A CN1398146A CN 02125484 CN02125484A CN1398146A CN 1398146 A CN1398146 A CN 1398146A CN 02125484 CN02125484 CN 02125484 CN 02125484 A CN02125484 A CN 02125484A CN 1398146 A CN1398146 A CN 1398146A
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Abstract
The present invention relates to a kind of organic electro luminescence part, which belongs to technical field of organic electro luminescence. Empty cave transmission layer of this part adopts organic quantum trap structure. The quantum trap transmission structure is composed by overlapping alternately two kinds of organic material layer. Therewith energy level of two kinds of material matches each other, forming momentum trap of empty cave at interface of quantum trap and forming layer singly by using dye in this organic quantum trap structure. The organic quantum trap structure that adopting on the present invention in the empty cave transmission layer can greatly control charge carrier moving in the empty cave transmission layer, realizes pouring balance that electron of luminous layer and empty-cave. Improving luminous efficiency and brightness of part.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device, belong to technical field of organic electroluminescence.
Background technology
Now, along with the arriving of Development of Multimedia Technology and information-intensive society, more and more higher to the flat-panel monitor performance demands.In recent years emerging three kinds of Display Techniques: plasma display, Field Emission Display and display of organic electroluminescence have all remedied the deficiency of cathode ray tube and LCD to a certain extent.Wherein, a series of advantages such as display of organic electroluminescence has from main light emission, low-voltage DC driven, solidifies entirely, the visual angle is wide, color is abundant, compare with LCD, display of organic electroluminescence does not need backlight, and the visual angle is big, and power is low, its response speed can reach 1000 times of LCD, its manufacturing cost but is lower than the LCD of equal resolution, and therefore, display of organic electroluminescence has broad application prospects.
1987, people such as the C.W.TANG (C.W.Tang of U.S. Kodak company, S.A.Slyke, Appl.Phys.Lett.51,913 (1987)) adopt double-decker first, with the aromatic diamines analog derivative as hole mobile material, with a kind of fluorescence efficiency very high and can make with Vacuum Coating method the high-quality thin film of even compact organic small molecule material---oxine aluminium is (hereinafter to be referred as Alq
3) as the luminescent layer material, prepare higher quantum efficiency (1%), high-luminous-efficiency (＞1.5lm/W), high brightness (＞1000cd/m
2) and low driving voltage (＜10V) organic electroluminescence device (OrganicElectroluminescent Devices is hereinafter to be referred as OLEDs) makes the research work in this field enter a brand-new era.Nineteen ninety, Britain Cambridge university Cavan enlightening is permitted breadboard Burroughes and his colleague finds that polymeric material also has good electroluminescent properties, and this important discovery is arrived polymer arts with the research promotion of electroluminescent organic material.Over year, people constantly improve the preparation technology of organic electroluminescence device surplus in the of ten, and its correlation technique development rapidly.
The internal quantum efficiency of OLEDs depends primarily on injection, transmission, the combined efficiency of charge carrier, and the luminous efficiency of device also is subjected to the strong influence of the balance of the numbers of electrons and holes injected simultaneously.At traditional N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines (hereinafter to be referred as NPB)/Alq
3Among the double-deck OLDs, the cavity transmission ability of NPB is far longer than Alq
3To the transmittability of electronics, therefore caused the serious imbalance of carrier transport in device, thereby reduced the luminous efficiency of device.It is found that, by using suitable hole mobile material or using suitable device architecture to mate electron transport material in the device (as Alq
3Deng) be the effective way that improves device performance.First kind of scheme is to use the way of mixing up to add 5 in hole transmission layer, 6,11,12-tetraphenyl aphthacene (hereinafter to be referred as rubrene) material, people such as Y.Hamada and M.S.Jang (Y.Hamada, T.Sano, K.Shibata, andK.Kuroki, Jpn.J.Appl.Phys., Part 234, L824 (1995); M.S.Jang, S.Y.Song, H.K.Shim, T.Zyung, S.D.Jung, L.M.Do, Synth.Met.91,317 (1997)) all carried out similar research work.People such as Aziz (H.Aziz, Z.Popovic, N.X.Hu, A.M.Hor, and G.Xu, Science 283,1900 (1999); H.Aziz and Z.D.Popovic, Appl.Phys.Lett.80,2180 (2002)) think that the mechanism of its effect is to make the rubrene molecule that mixes up take on the effect of hole trap, thereby make the performance of device be improved by mixing up the rubrene material.Another method uses quantum well structure to improve device efficiency exactly.Organic quantum trap improves the device luminous efficiency helping to reduce the OLEDs luminescent spectrum width, and aspects such as switching device glow color have obtained some successes.But organic quantum trap generally is used for improving the electronics of luminescent layer and the concentration in hole in the present research, and then improves the combined efficiency of charge carrier.Such as, people such as N.Tada (N.Tada, S.Tatsuhara, A.Fujii, Y.Ohmori and K.Yoshino, Jpn.J.Appl.Phys.36,421 (1997)) use Alq at the luminescent layer of OLEDs
3And N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines (hereinafter to be referred as TPD) alternate multiple quantum well structure, (luminescent layer only uses Alq to the luminous efficiency of device than traditional structure
3) increase.Similarly experiment further confirms the improvement of this performance, the raising of mainly giving the credit to the luminescent layer carrier concentration.
Summary of the invention
The purpose of this invention is to provide a kind of organic electroluminescence device, in hole transmission layer, move, realize the purpose of luminescent layer the balance of the numbers of electrons and holes injected thereby reach the control holoe carrier.Simultaneously, can regulate and control the luminescence center of device by controlling organic quantum well periodicity in this device hole transmission layer.
For achieving the above object, technical scheme of the present invention provides a kind of organic electroluminescence device, this device comprises transparent substrate, first and second electrode layers, but and the organic luminous layer that is clipped in hole transmission layer, transition zone and transmission electronic between described two electrode layers, it is characterized in that: hole transmission layer adopts organic quantum trap, the organic material layer that this quantum well transmission structure is matched each other by two kinds of energy levels replaces overlapping the composition, and one deck of wherein forming organic quantum trap is a dye coating.
The organic electroluminescence device structure that technique scheme proposes is as follows:
Transparent substrate/first electrode layer (anode layer) but/organic luminous layer/the second electrode lay (cathode layer) (1) of hole transmission layer-organic quantum trap/transition zone/transmission electronic
Wherein the transparent substrate in the structural formula (1) can adopt glass or flexible substrate, and flexible substrate is made up of compounds such as polyesters, polyimides; First electrode layer (anode layer) is a conductive film, form by inorganic material or organic polymer, inorganic material is generally the higher metals of work function such as metal oxides such as tin indium oxide (hereinafter to be referred as ITO), zinc oxide, zinc tin oxide or gold, copper, silver, the optimized ITO that is chosen as, organic polymer are preferably polythiophene (hereinafter to be referred as PEDOT), polyaniline (hereinafter to be referred as PANI) etc.; Hole transmission layer adopts organic quantum trap, this quantum well transmission structure replaces overlapping the composition by two kinds of organic material layers, one deck of wherein forming organic quantum trap is a dye coating, the energy level of above-mentioned two kinds of organic materials matches each other, and because a kind of energy level potential barrier effect of material, make the potential well in electronics and hole in commaterial, the present invention is preferably (NPB/rubrene)
n, (NPB/ copper phthalocyanine (hereinafter to be referred as CuPc))
n, (the NPB/4-4-dicyano methylene-2-tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-4H-pyrans (hereinafter to be referred as DCJTB))
n, (TPD/DCJTB)
n, (4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine (hereinafter to be referred as MTDATA)/rubrene)
n, (MTDATA/4-methylene dicyanoethyl-2-methyl-6-(p-dimethylamino styryl)-4H-pyrans (hereinafter to be referred as DCM))
nThe multi-layer quantum well structure, wherein quantum well periodicity n is 1～10 (integer); Transition zone adopts the material that is complementary with luminescent layer material energy level, and according to the difference of two kinds of materials of the multi layer quantum well structure optimization of hole transmission layer, transition zone can be preferably NPB, TPD; But the organic luminous layer of transmission electronic is generally metal complex, through being preferably Alq
3, (salicylidene adjacent amine phenol)-(oxine) close aluminium (III) (hereinafter to be referred as Al (Saph-q)), (the adjacent amine phenol of salicylidene)-(oxine) closes gallium (III) (hereinafter to be referred as Ga (Saph-q)), 4-hydroxy-acridine zinc (hereinafter to be referred as Zn (Ac)
2) etc.; The second electrode lay (cathode layer) is a metal level, is generally the alloy of the lower metal of work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver, and the present invention is preferably Mg successively: Ag alloy-layer, Ag layer.In addition, between first electrode layer (anode layer) and hole transmission layer, can accompany one deck resilient coating in the structural formula (1), form by phthalocyanine-like compound or polyacrylate or polyimide or fluoropolymer or inorganic fluoride salt or inorganic oxide or diamond.
The organic electroluminescence device that the present invention proposes, have the following advantages: can significantly control the migration of holoe carrier in hole transmission layer at the organic quantum trap that hole transmission layer adopts, thereby realized the injection balance in luminescent layer electronics and hole, and then improved the luminous efficiency and the luminosity of device, and can realize the luminescence center of this device by control organic quantum well periodicity.
Below by description of drawings, it is clearer that the present invention can become.
Description of drawings
Fig. 1 is the structural representation of the organic electroluminescence device that proposes of the present invention, wherein 1 is transparent substrate, 2 is first electrode layer (anode layers), the 3rd, hole transmission layer (having organic quantum trap), the 4th, transition zone, the 5th, but the organic luminous layer of transmission electronic, the 6th, the second electrode lay (cathode layer), the 7th, power supply.
Fig. 2 is that (structure is Glass/ITO/ (NPB/rubrene) to the organic electroluminescence device that proposes of the present invention
n/ NPB/Alq
3/ Mg: energy level schematic diagram Ag/Ag).
Fig. 3 is that (structure is Glass/ITO/ (NPB/rubrene) to the organic electroluminescence device that proposes of the present invention
n/ NPB/Alq
3/ Mg: the Ag/Ag) brightness-current density curve that changes with quantum well periodicity n.
Fig. 4 is that (structure is Glass/ITO/ (NPB/rubrene) to the organic electroluminescence device that proposes of the present invention
n/ NPB/Alq
3/ Mg: the Ag/Ag) luminous efficiency-current density curve that changes with quantum well periodicity n.
Fig. 5 is that (structure is Glass/ITO/ (NPB/rubrene) to the organic electroluminescence device that proposes of the present invention
n/ NPB/Alq
3/ Mg: Ag/Ag) with quantum well periodicity n spectrogram that changes and spectrogram (normalization) with device of structural formula (4), the n=0 of (a) curve wherein, (b) n=2 of curve, (c) n=4 of curve, (d) n=6 of curve, (e) device architecture of curve correspondence such as structural formula (4).
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is as just illustrative embodiment of the present invention.
Embodiment
The organic electroluminescence device structure that the present invention proposes as shown in Figure 1, wherein: 1 is transparent substrate, can be glass or flexible substrate, and flexible substrate is made up of compounds such as polyesters, polyimides; 2 is first electrode layer (anode layer), form by inorganic material or organic polymer, inorganic material is generally the higher metals of work function such as metal oxides such as ITO, zinc oxide, zinc tin oxide or gold, copper, silver, and the optimized ITO that is chosen as, organic polymer are preferably PEDOT, PANI etc.; 3 is hole transmission layer, adopt organic quantum trap, this quantum well transmission structure replaces overlapping the composition by two kinds of organic material layers, one deck of wherein forming organic quantum trap is a dye coating, the energy level of above-mentioned two kinds of organic materials matches each other, and because a kind of energy level potential barrier effect of material, make the potential well in electronics and hole in commaterial, the present invention is preferably (NPB/rubrene)
nThe multi-layer quantum well structure, wherein quantum well periodicity n is 1～10 (integer), the highest occupied molecular orbital energy level (hereinafter to be referred as HOMO) of NPB and rubrene is respectively-5.5eV ,-5.4eV, lowest unoccupied molecular orbital energy level (hereinafter to be referred as LUMO) is respectively-2.5eV ,-3.2eV, by this preferred (NPB/rubrene)
nDo hole transmission layer device energy level schematic diagram (see figure 2) as can be seen because the energy level potential barrier at NPB and rubrene material interface place, holoe carrier just can be by enrichment and constraint in the rubrene layer in device; 4 is transition zone, and the material that the energy level of employing and luminescent layer is complementary is if the multi layer quantum well structure optimization of hole transmission layer is (NPB/rubrene)
n, transition zone can be preferably NPB; But 5 is the organic luminous layer of transmission electronic, is generally metal complex, through being preferably Alq
3, Al (Saph-q), Ga (Saph-q), Zn (Ac)
2Deng; 6 is that the second electrode lay (cathode layer) is a metal level, is generally the alloy of the lower metal of work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver, and the present invention is preferably Mg successively: Ag alloy-layer, Ag layer.In addition, one deck resilient coating be can accompany between two-layer, phthalocyanine compound, polymethyl methacrylate, polyimides, fluoropolymer are generally, perhaps LiF, AlF 2,3
3, CaF
2, MgF
2, SiO
2, MgO, Al
2O
3With inorganic matters such as diamonds.
The structure of the organic electroluminescence device that proposes according to the present invention, the following (see figure 1) of structure when each layer adopts concrete material:
Glass/ITO/(NPB/rubrene)
n/NPB/Alq
3/Mg∶Ag/Ag???????????????????(2)
Wherein n is the periodicity of (NPB/rubrene) quantum well in the structural formula (2), and the n value can be 1～10 (integer).According to said structure formula (2), be described below in conjunction with the detailed execution mode of preparation process of device:
1. utilize washing agent to boil with the ultrasonic method of deionized water the transparent conduction base sheet ito glass is cleaned, dries, wherein the ITO film above the conductive substrate is as the anode of device, and the square resistance of ITO film is 5～100 Ω, and thickness is 80.0～280.0nm;
2. the ito glass behind the above-mentioned cleaning, drying being placed pressure is 1 * 10
-5～5 * 10
-3In the vacuum chamber of Pa, evaporation hole transmission layer on above-mentioned ITO film, hole transmission layer adopts organic multi-quantum pit structure, promptly adopt NPB/rubrene to replace the quantum well structure of n layer, n is 1～10, and wherein the evaporation speed of rubrene is 0.02～0.1nm/s, and the thickness of each layer rubrene is 0.5～10.0nm in the quantum well structure, the evaporation speed of NPB is 0.1～0.6nm/s, and the thickness of each layer NPB is 1.5～30.0nm in the quantum well structure;
3. evaporation one deck NPB is as the transition zone of device on above-mentioned hole transmission layer, and the evaporation speed of film is 0.1～0.6nm/s, and thickness is 10.0～45.0nm;
4. on above-mentioned NPB film, continue evaporating Al q
3As the luminescent layer of device, Alq
3The ability that also has transmission electronic, the evaporation speed of film is 0.1～0.6nm/s, thickness is 40.0～100.0nm;
5. at above-mentioned Alq
3Evaporation Mg successively on the film: Ag alloy-layer, Ag layer are as the negative electrode of device; wherein alloy-layer Mg, Ag evaporation speed ratio are 10: 1; the total speed of evaporation is 0.6～2.0nm/s; the evaporation gross thickness is 50.0～200.0nm; Ag protective layer evaporation speed is 0.3～0.8nm/s, and thickness is 40.0～200.0nm.
That uses in the performance of the organic electroluminescence device that proposes for the ease of the present invention and the property comparison of traditional structure (being n=0) device, the material of each layer of traditional structure (n=0) use and the specific embodiment of the present invention is identical, and its structure is as follows:
Glass/ITO/NPB/Alq
3/Mg∶Ag/Ag??????????????????????????????????????(3)
And for the ease of the contrast of device performance, keeping the thickness of all ITO layers in the device is 240.0nm, NPB film (comprising the transition zone part) gross thickness is 40.0nm, in quantum well structure, the thickness of each NPB layer is 5.0nm, the gross thickness of n layer rubrene film is 8.0nm in the hole transmission layer, and the thickness of transition zone NPB is 40.0nm in the structural formula (3), Alq
3The thickness of layer is 60.0nm, and Mg: the thickness of Ag alloy-layer and Ag layer is 100.0nm.With quantum well periodicity n not simultaneously, the structure of OLEDs is as shown in table 1, and the brightness of device-current density curve, luminous efficiency-current density curve are seen Fig. 3, Fig. 4 respectively.
Table 1.n OLEDs structure (with embodiment 1～4) 0 Glass/ITO/NPB (40.0nm)/Alq
3(60.0nm)/Mg: Ag/Ag2 Glass/ITO/[NPB (5.0nm)/rubrene (4.0nm)]
2/ NPB (30.0nm)/Alq
3(60.0nm)/Mg: Ag/Ag4 Glass/ITO/[NPB (5.0nm)/rubrene (2.0nm)]
4/ NPB (20.0nm)/Alq
3(60.0nm)/Mg: Ag/Ag6 Glass/ITO/[NPB (5.0nm)/rubrene (1.3nm)]
6/ NPB (10.0nm)/Alq
3(60.0nm)/Mg: Ag/Ag
Fig. 5 is the spectrogram of the organic electroluminescence device that proposes of the present invention, and wherein device (a) (b), (c), is respectively that quantum well periodicity n is 0,2,4 (d), 6 o'clock device, and wherein the device architecture that curve (e) is corresponding is as follows:
Glass/ITO/NPB/Alq
3∶rubrene(2w％)/Mg∶Ag/Ag?????????????????????????????(4)
Device in the structural formula (4) is luminous to be the Yellow luminous of rubrene material.Can see that device (a) sends the Alq of 520nm
3Green emitting, yet can see on device (b) and the spectrogram (c) and presented the luminous of rubrene, simultaneously near 520nm with Alq
3The acromion of material.It is worthy of note that when the quantum well devices periodicity was 6, device is luminous all to be the luminous of rubrene basically, the same device of spectrum peak (e) of device (d) is identical substantially.
Above-mentioned work confirms, uses the NPB/rubrene quantum well structure, not only can regulate and control the transmission of charge carrier, simultaneously also can be by changing the luminescence center that the organic quantum well periodicity comes control device.
In organic electroluminescence device, introduce organic quantum well hole transport structure, the effectively transmission of holoe carrier in the control device, thus help to improve the luminous efficiency of device.Simultaneously, owing to use the independent stratification of dyestuff in the organic quantum trap, studies show that of EL spectrum, by changing the effectively luminescence center of control device of quantum well periodicity, this provides useful reference for realization different colours luminous.
Describe the present invention below in conjunction with preferred embodiment, for the purpose of reference, list the abbreviation of the organic material that relates in this specification and the full name table of comparisons as follows:
The abbreviation of the organic material that relates in this specification of table 2. and the full name table of comparisons
Embodiment:
Table 3. Comparative Examples: among the OLEDs of NPB/rubrene organic quantum trap, periodicity n is to the influence of device performance
| Embodiment 1 | | | | | ||
| Periodicity | ????0 | ????2 | ????4 | ????6 | ????0 | |
| Layer | Material | Thickness/nm | Thickness/nm | Thickness/nm | Thickness/nm | Thickness/nm |
| Anode layer | ??ITO | ????240.0 | ????240.0 | ????240.0 | ????240.0 | ????240.0 |
| Hole transmission layer | ??NPB | ????0 | ????5.0 | ????5.0 | ????5.0 | ????0 |
| ??rubrene | ????0 | ????4.0 | ????2.0 | ????1.3 | ????0 | |
| Transition zone | ??NPB | ????40.0 | ????30.0 | ????20.0 | ????10.0 | ????40.0 |
| Luminescent layer | ??Alq 3 | ????60.0 | ????60.0 | ????60.0 | ????60.0 | (60.0 mixing up 2w% rubrene) |
| Cathode layer | ??Mg∶Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | ????100.0 |
| ??Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | ????100.0 | |
| Device parameters | Current density/A/m 2 | ????3000 | ????3000 | ????3000 | ????3000 | |
| Brightness/cd/m 2 | ????6160 | ????9000 | ????17800 | ????13500 | ||
| Luminous efficiency/cd/A | ????2.01 | ????3.03 | ????6.00 | ????4.46 | ||
| Emission wavelength/nm | ????528 | ????548 | ????556 | ????560 | ????564 |
As can be seen from Table 3, under the experiment condition of this patent, quantum well periodicity n is 4 o'clock, and the brightness and the luminous efficiency of OLEDs device are best.And when the quantum well periodicity is 6, because each layer thickness is too thin in the quantum well, can not forms high-quality continuous film, thereby destroy the structure of quantum well, device efficiency descends on the contrary.Therefore, under the prerequisite of not destroying quantum well structure, improve the periodicity of device, can further improve the efficient of device.Simultaneously, we can also find that along with the raising of periodicity n, the luminous ratio that occupies of rubrene is more and more higher in device is luminous, thus the spectral color red shift, and this luminescence center that fully proves device is along with the raising of periodicity is shifted to the rubrene layer.And periodicity n is high more, helps more to the luminous transfer of rubrene layer.
Table 4. Comparative Examples: among the OLEDs of NPB/rubrene organic quantum trap, NPB thickness is to the influence of device performance
| Embodiment |
| 6 | Embodiment 7 | | Embodiment 9 | ||
| Periodicity | ????4 | ????4 | ????4 | ????4 | |
| Layer | Material | Thickness/nm | Thickness/nm | Thickness/nm | Thickness/nm |
| Anode layer | ??ITO | ????240.0 | ????240.0 | ????240.0 | ????240.0 |
| Hole transmission layer | ??NPB | ????1.0 | ????3.0 | ????5.0 | ????7.0 |
| ??rubrene | ????2.0 | ????2.0 | ????2.0 | ????2.0 | |
| Transition zone | ??NPB | ????36.0 | ????28.0 | ????20.0 | ????12.0 |
| Luminescent layer | ??Alq 3 | ????60.0 | ????60.0 | ????60.0 | ????60.0 |
| Cathode layer | ??Mg∶Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 |
| ??Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | |
| Device parameters | Current density/A/m 2 | ????3000 | ????3000 | ????3000 | ????3000 |
| Brightness/cd/m 2 | ????15000 | ????24000 | ????18000 | ????17400 | |
| Luminous efficiency/cd/A | ????5.00 | ????8.00 | ????6.00 | ????5.80 |
As can be seen from Table 4, when the NPB layer thickness was 3.0nm, the OLEDs device performance was best.And when thickness was 1.0nm, device was because the destroyed device performance that causes of quantum well structure descends.Therefore, the attenuation of NPB layer thickness helps improving device performance.
Table 5. Comparative Examples: among the OLEDs of NPB/rubrene organic quantum trap, rubrene thickness is to the influence of device performance
| Embodiment |
| 10 | Embodiment 11 | Embodiment 12 | Embodiment 13 | ||
| Periodicity | ????4 | ????4 | ????4 | ????4 | |
| Layer | Material | Thickness/nm | Thickness/nm | Thickness/nm | Thickness/nm |
| Anode layer | ??ITO | ????240.0 | ????240.0 | ????240.0 | ????240.0 |
| Hole transmission layer | ??NPB | ????5.0 | ????5.0 | ????5.0 | ????5.0 |
| ??rubrene | ????1.0 | ????2.0 | ????4.0 | ????6.0 | |
| Transition zone | ??NPB | ????20.0 | ????20.0 | ????20.0 | ????20.0 |
| Luminescent layer | ??Alq 3 | ????60.0 | ????60.0 | ????60.0 | ????60.0 |
| Cathode layer | ??Mg∶Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 |
| ??Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | |
| Device parameters | Current density/A/m 2 | ????3000 | ????3000 | ????3000 | ????3000 |
| Brightness/cd/m 2 | ????10500 | ????18000 | ????15000 | ????15000 | |
| Luminous efficiency/cd/A | ????3.50 | ????6.00 | ????5.00 | ????5.00 |
As can be seen from Table 5, changing the rubrene layer thickness influences less to device performance.Except that 1.0nm destroys periodic structure, can select relatively thinner thickness according to the condition of technology.This patent is preferably 2.0nm.
Table 6. Comparative Examples: among the OLEDs of organic quantum trap, changes in material is to the influence of device performance in luminescent layer material and the quantum well structure
| Embodiment 14 | Embodiment 15 | Embodiment 16 | Embodiment 17 | |||
| Layer | Material | Thickness/nm | Thickness/nm | Thickness/nm | Thickness/nm | |
| Periodicity | ????0 | ????4 | ????4 | ????4 | ||
| Anode layer | ??ITO | ????240.0 | ????240.0 | ????240.0 | ????240.0 | |
| Hole transmission layer | The NPB potential barrier | ????5.0 | ????5.0 | ????5.0 | ????5.0 | |
| Potential well | Material | ????CuPc | ????rubrene | ????rubrene | ????DCJTB | |
| ????2.0 | ????2.0 | ????2.0 | ????2.0 | |||
| Transition zone | ??NPB | ????20.0 | ????20.0 | ????20.0 | ????20.0 | |
| Luminescent layer | Material | ????Alq 3 | ????Alq 3 | ????Al(Saph-q) | ????Ga(Saph-q) | |
| ????60.0 | ????60.0 | ????60.0 | ????60.0 | |||
| Cathode layer | ??Mg∶Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | |
| ??Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | ||
| Device parameters | Current density/A/m 2 | ????3000 | ????3000 | ????3000 | ????3000 | |
| Brightness/cd/m 2 | ????22000 | ????17800 | ????25800 | ????9500 | ||
| Luminous efficiency/cd/A | ????7.03 | ????5.90 | ????8.60 | ????3.17 | ||
| Emission wavelength/nm | ????528 | ????550 | ????560 | ????620 | ||
Table 7. Comparative Examples: among the OLEDs of NPB/rubrene organic quantum trap, periodicity n is to the influence of device lifetime
Embodiment 22:
| Embodiment 18 | Embodiment 19 | Embodiment 20 | Embodiment 21 | ||
| Periodicity | ????0 | ????1 | ????4 | ????6 | |
| Layer | Material | Thickness/nm | Thickness/nm | Thickness/nm | Thickness/nm |
| Anode layer | ????ITO | ????240.0 | ????240.0 | ????240.0 | ????240.0 |
| Hole transmission layer | ????NPB | ????0 | ????5.0 | ????5.0 | ????5.0 |
| ????rubrene | ????0 | ????8.0 | ????2.0 | ????1.3 | |
| Transition zone | ????NPB | ????40.0 | ????35.0 | ????20.0 | ????10.0 |
| Luminescent layer | ????Alq 3 | ????60.0 | ????60.0 | ????60.0 | ????60.0 |
| Cathode layer | ????Mg∶Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 |
| ????Ag | ????100.0 | ????100.0 | ????100.0 | ????100.0 | |
| Device parameters | Original intensity/cd/m 2 | ????1000 | ????1000 | ????1000 | ????1000 |
| ????T 1/2/h | ????2.5 | ????2.4 | ????2.6 | ????1.5 | |
| Life-span/h | ????25 | ????24 | ????26 | ????15 |
Utilize washing agent boil with the ultrasonic method of deionized water be that the ito glass of 60 Ω cleans, dries to square resistance, wherein the thickness of ITO is 100.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure
-3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (NPB/rubrene) on the ITO film
4, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic luminous layer Al (Saph-q), evaporation speed is 0.2nm/s, thickness is 60.0nm.Continue evaporated metal layer on Al (Saph-q) layer, metal level is successively by Mg: Ag alloy and Ag form, Mg: the total evaporation speed of Ag is 1.5nm/s, the ratio of Mg and Ag evaporation speed is 10: 1, thickness is 150.0nm, and the evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 16000cd/m
2
Embodiment 23:
Utilize washing agent boil with the ultrasonic method of deionized water be that the ito glass of 15 Ω cleans, dries to square resistance, wherein the thickness of ITO is 260.0nm.It is 1 * 10 that ito glass after the oven dry is placed pressure
-3In the vacuum chamber of Pa, utilize the CuPc resilient coating of thermal evaporation method evaporation 10.0nm on the ITO film, evaporation speed is 0.01nm/s.Thereafter, evaporation alternate multiple hole transmission layer (NPB/rubrene) in the above
3, wherein the evaporation speed of NPB film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Al (Saph-q), evaporation speed is 0.2nm/s, thickness is 60.0nm.Continue evaporated metal layer on Al (Saph-q) layer, metal level is successively by Mg: Ag alloy and Ag form, Mg: the total evaporation speed of Ag is 1.5nm/s, and the ratio of Mg and Ag evaporation speed is 10: 1, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.5V that device opens bright voltage, and maximum luminousing brightness is 26000cd/m
2
Embodiment 24:
Utilize washing agent boil with the ultrasonic method of deionized water be that the ito glass of 100 Ω cleans, dries to square resistance, wherein the thickness of ITO is 60.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure
-3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (MTDATA/rubrene) on the ITO film
10, wherein the evaporation speed of MTDATA film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.1nm/s, and thickness is 2.0nm.The NPB layer that continues evaporation 5.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq
3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq
3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy and Ag form, Mg: the total evaporation speed of Ag is 1.5nm/s, and the ratio of Mg and Ag evaporation speed is 10: 1, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 14000cd/m
2
Embodiment 25:
Utilize washing agent boil with the ultrasonic method of deionized water be that the ito glass of 60 Ω cleans, dries to square resistance, wherein the thickness of ITO is 100.0nm.It is 2 * 10 that ito glass after the oven dry is placed pressure
-3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (TPD/DCJTB) on the ITO film
4, wherein the evaporation speed of TPD film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of DCJTB film is 0.1nm/s, and thickness is 2.0nm.The TPD layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq
3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq
3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy and Ag form, Mg: the total evaporation speed of Ag is 1.5nm/s, and the ratio of Mg and Ag evaporation speed is 10: 1, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 50.0nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 12000cd/m
2Embodiment 26:
Utilize washing agent boil with the ultrasonic method of deionized water be that the IT0 glass of 40 Ω cleans, dries to square resistance, wherein the thickness of ITO is 150.0nm.It is 1 * 10 that ito glass after the oven dry is placed pressure
-3In the vacuum chamber of Pa, utilize thermal evaporation method evaporation alternate multiple hole transmission layer (MTDATA/rubrene) on the ITO film
4, wherein the evaporation speed of MTDATA film is 0.2nm/s, and thickness is 5.0nm, and the evaporation speed of rubrene film is 0.2nm/s, and thickness is 2.0nm.The MTDATA layer that continues evaporation 20.0nm on this hole transmission layer is as transition zone, and evaporation speed is 0.2nm/s, on continue evaporation organic function layer Alq
3, evaporation speed is 0.2nm/s, thickness is 60.0nm.At Alq
3Continue evaporated metal layer on the layer, metal level is successively by Mg: Ag alloy and Ag form, Mg: the total evaporation speed of Ag is 1.5nm/s, and the ratio of Mg and Ag evaporation speed is 10: 1, and thickness is 150.0nm; The evaporation speed of Ag is 0.4nm/s, and evaporation thickness is 5.00nm.It is 2.8V that device opens bright voltage, and maximum luminousing brightness is 18000cd/m
2
Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description, should be appreciated that under the guiding of the present invention's design, those skilled in the art can carry out various modifications and improvement, and claims have been summarized scope of the present invention.
Claims (9)
1. organic electroluminescence device, this device comprises transparent substrate (1) first (2) and the second electrode lay (6), and be clipped in hole transmission layer (3) between described two electrode layers, transition zone (4) but and the organic luminous layer of transmission electronic (5), it is characterized in that: hole transmission layer (3) adopts organic quantum trap, the organic material layer that this quantum well transmission structure is matched each other by two kinds of energy levels replaces overlapping the composition, and one deck of wherein forming organic quantum trap is a dye coating.
2. according to the organic electroluminescence device of claim 1, it is characterized in that the periodicity of the organic quantum trap that wherein said hole transmission layer (3) adopts is 1～10 (integer).
3. according to the organic electroluminescence device of claim 1, it is characterized in that can accompanying one deck resilient coating between wherein said first electrode layer (2) and the hole transmission layer (3), resilient coating is made up of phthalocyanine-like compound or polyacrylate or polyimide or fluoropolymer or inorganic fluoride salt or inorganic oxide or diamond.
4. according to the organic electroluminescence device of claim 1, it is characterized in that wherein said transparent substrate (1) adopts glass or flexible substrate, flexible substrate is made up of polyesters or polyimides compounds.
5. according to the organic electroluminescence device of claim 1, it is characterized in that wherein said first electrode layer (2) is made up of inorganic material or organic polymer, inorganic material is preferably tin indium oxide, and organic polymer is preferably polythiophene or polyaniline.
6. according to the organic electroluminescence device of claim 1, two kinds of materials that it is characterized in that the organic quantum trap that wherein said hole transmission layer (3) adopts are preferably N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines/5,6,11,12-tetraphenyl aphthacene or N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines/copper phthalocyanine or N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4, the 4-diamines/4-4-dicyano methylene-2-tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-and 4H-pyrans or N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines/4-4-dicyano methylene-2-the tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-4H-pyrans or 4,4 ', 4 " (3-aminomethyl phenyl aniline) triphenylamine/5,6-three; 11; 12-tetraphenyl aphthacene or 4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine/4-methylene dicyanoethyl-2-methyl-6-(p-dimethylamino styryl)-4H-pyrans.
7. according to the organic electroluminescence device of claim 1, it is characterized in that wherein said transition zone (4) material is preferably N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1-xenyl-4,4-diamines or N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines.
8. according to the organic electroluminescence device of claim 1, but organic luminous layer (5) material that it is characterized in that wherein said transmission electronic is preferably 8-hydroxyquinoline aluminum or (the adjacent amine phenol of salicylidene)-(oxine) closes aluminium (III) or (the adjacent amine phenol of salicylidene)-(oxine) closes gallium (III) or 4-hydroxy-acridine zinc.
9. according to the organic electroluminescence device of claim 1, it is characterized in that wherein said the second electrode lay (6) material is preferably Mg successively: Ag alloy-layer, Ag layer.
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| CNB031210635A CN1161002C (en) | 2002-04-03 | 2003-03-21 | Organic electroluminescent device |
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| CN105070845A (en) * | 2015-07-17 | 2015-11-18 | 京东方科技集团股份有限公司 | Organic light-emitting device, manufacturing method thereof, and display method |
| WO2017012341A1 (en) * | 2015-07-17 | 2017-01-26 | Boe Technology Group Co., Ltd. | Organic light emitting apparatus, display device having the same, and fabricating method thereof |
| CN105070845B (en) * | 2015-07-17 | 2017-12-26 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device and preparation method thereof, display device |
| CN107808604A (en) * | 2017-10-05 | 2018-03-16 | 友达光电股份有限公司 | Display device and control method thereof |
| CN107808604B (en) * | 2017-10-05 | 2020-03-10 | 友达光电股份有限公司 | Display device and control method thereof |
| CN108461640A (en) * | 2018-03-16 | 2018-08-28 | 中国科学院长春应用化学研究所 | Crystalline state organic electroluminescent LED and its application |
| CN110364635A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Quantum dot light-emitting diode and preparation method thereof |
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